CN204625830U - A kind of device for high-purity silicon carbide monocrystalline - Google Patents
A kind of device for high-purity silicon carbide monocrystalline Download PDFInfo
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- CN204625830U CN204625830U CN201520284502.1U CN201520284502U CN204625830U CN 204625830 U CN204625830 U CN 204625830U CN 201520284502 U CN201520284502 U CN 201520284502U CN 204625830 U CN204625830 U CN 204625830U
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Abstract
The utility model relates to a kind of device for high-purity silicon carbide monocrystalline, belongs to field of single crystal growth.It comprises growth room, it is characterized in that: described growth room is by upper tongued and grooved flanges, silica tube, lower seal flange forms, the bottom of described growth room is connected with isolated from atmosphere room, room is provided with action pane to isolated from atmosphere, induction heater is by the both sides of Bracket setting in isolated from atmosphere Shi Shang growth room, the side of isolated from atmosphere room is connected with transition chamber, deimpurity heating unit is provided with in described transition chamber, described isolated from atmosphere room and transition chamber are equipped with the mechanism keeping internal medium to be in shielding gas state or vacuum state, the bottom of isolated from atmosphere room is also provided with suction cleaner interface, the inside of described isolated from atmosphere room is provided with ball-screw, the lower seal Flange joint of ball-screw and bottom, growth room.The utility model effectively can remove impurity, optimizes growth of silicon carbide environment, and can complete annealing, be conducive to large size silicon-carbide single crystal growing.
Description
Technical field
The utility model relates to a kind of device for high-purity silicon carbide monocrystalline, belongs to field of single crystal growth.
Background technology
Semi-insulation SiC monocrystalline polished section prepares the best substrate of broad stopband solid state microwave device present stage, also has very important effect in addition for power device, Deep submicron devi8.The more important thing is, no matter from electrical characteristic or thermal conduction characteristic, semi-insulation SiC is all the another kind of semiconductor material with wide forbidden band in photoelectricity and microwave power device with major application prospect.
Researchist introduces deep-level impurity vanadium usually in SiC crystal, deeply compensates energy level to be formed, and is positioned near the central authorities of forbidden band, can plays the effect of trapped carrier well, and the silicon carbide only mixing vanadium at present shows high resistant characteristic; But, the silicon carbide of vanadium doping also has some problems: vanadium solubleness in SiC is very low, be easy to form throw out, the formation of the defects such as microtubule can be caused, have a strong impact on crystal mass, the more important thing is, the dark trapping center mixed in vanadium silicon carbide substrates affects the power stage of Deep trench termination, therefore prepares the focus that high-purity semi-insulating silicon carbide monocrystalline becomes research at present.The key of high purity semi-insulating single crystal growing technology removes these the two kinds of impurity of B, N in crystal, and B is the impurity with graphite symbiosis, and plumbago crucible, lagging material, SiC source material all can adsorb N, and therefore removing these two kinds of impurity has certain difficulty.Documents and materials show, and in crystal growing process, undesirable N is most from device and raw material itself, and researchist once attempted by using high-purity source to expect to minimize with the extremely pure apparatus assembly without high nitrogen-containing the N discharged in higher temperature growth processes
2but this kind of method difficulty is very big.Researchist also attempts to pass into H in crystal growing process
2, by regulating silicon carbon ratio to stop N element to enter crystal, but simple use passes into H
2method the N content in crystal can not be made to be reduced to content required by high-purity semi-insulating SiC.
In order to overcome the deficiency that above-mentioned preparation technology exists, needing to invent a kind of device for high-purity silicon carbide monocrystalline, reducing and even stop the impurity such as the absorption N of crucible and lagging material.
Summary of the invention
For the deficiencies in the prior art, the utility model provides a kind of effective device for high-purity silicon carbide monocrystalline.
The utility model is achieved by the following technical solution:
A kind of device for high-purity silicon carbide monocrystalline, comprise growth room, it is characterized in that: described growth room is by upper tongued and grooved flanges, silica tube, lower seal flange forms, the bottom of described growth room is connected with isolated from atmosphere room, room is provided with action pane to isolated from atmosphere, induction heater is by the both sides of Bracket setting in isolated from atmosphere Shi Shang growth room, the side of isolated from atmosphere room is connected with transition chamber, deimpurity heating unit is provided with in described transition chamber, described isolated from atmosphere room and transition chamber are equipped with the mechanism keeping internal medium to be in shielding gas state or vacuum state, the bottom of isolated from atmosphere room is also provided with suction cleaner interface, the inside of described isolated from atmosphere room is provided with ball-screw, the lower seal Flange joint of ball-screw and bottom, growth room.
Device for high-purity silicon carbide monocrystalline of the present utility model, primarily of isolated from atmosphere room, growth room, transition chamber is formed, growth room is arranged to down the mode of uncapping, be movably connected on isolated from atmosphere room, isolated from atmosphere room is provided with action pane, the side of isolated from atmosphere room is connected with transition chamber, deimpurity heating unit is provided with in transition chamber, isolated from atmosphere room and transition chamber are equipped with the mechanism keeping internal medium to be in shielding gas state or vacuum state, in transition chamber, heating unit is installed, can heat crucible, make the impurity effusions such as planar water, improve the purity of SiC.
For ease of realizing the control of annealing or growth differing temps, described induction heater is telefault; Be in shielding gas state or shielding gas state for making realizes internal medium, the both sides of described transition chamber are respectively equipped with left tongued and grooved flanges and right tongued and grooved flanges; Described mechanism is vacuum extractor or the inlet mouth interface be arranged on the wall of respective space and air outlet interface and pressure controller; Described shielding gas is any one or mixtures several arbitrarily of argon gas, helium, hydrogen kind; The heating unit of described transition chamber is Infrared heaters or resistance heater; At least two secondary operation gloves are installed at the peripheral operation window place of described isolated from atmosphere room.
The utility model is used for the device of high-purity silicon carbide monocrystalline, and this device effectively can remove impurity, optimizes growth of silicon carbide environment, and can complete annealing, be conducive to large size silicon-carbide single crystal growing.
Accompanying drawing explanation
Fig. 1 is the front view of the utility model device;
Fig. 2 is the vertical view of Fig. 1;
In figure, 1, isolated from atmosphere room, 2, air outlet interface I, 3, support, 4, ruhmkorff coil, 5, silica tube, 6, upper tongued and grooved flanges, 7, growth room, 8, lower seal flange, 9, air outlet II, 10, heating unit, 11, transition chamber, 12, right tongued and grooved flanges, 13, pallet, 14, inlet mouth interface II, 15, left tongued and grooved flanges, 16, inlet mouth interface III, 17, ball-screw, 18, suction cleaner interface.
Embodiment
Accompanying drawing is a kind of specific embodiment of the present utility model, this embodiment comprises isolated from atmosphere room 1, growth room 7, transition chamber 11, right tongued and grooved flanges 12 and left tongued and grooved flanges 15 are equipped with in transition chamber 11 both sides, transition chamber 11 and isolated from atmosphere room 1 can be separated respectively, in transition chamber 11, Infrared heaters is installed, can heats crucible, make the impurity effusions such as planar water; In transition chamber 11, there is inlet mouth interface II14 and air outlet interface II9, and setting pressure controller, the inert gas environment being in certain pressure in transition chamber 11 can be maintained, and the impurity such as the planar water of effusion can be taken away, the pallet 13 that can slide is placed in transition chamber 11, can crucible be transferred in isolated from atmosphere room 1 by transition chamber 11 by pallet 13, operation gloves are all installed before and after isolated from atmosphere room 1, can carry out compounding practice by two operator, and front and back distribution reduces the volume of isolated from atmosphere room 1; In isolated from atmosphere room 1, there is inlet mouth interface III16 and air outlet interface I2, and setting pressure controller, the inert gas environment that isolated from atmosphere indoor are in certain pressure can be maintained; In isolated from atmosphere room 1, suction cleaner interface 18 is installed, can cleans in insulated chamber; Isolated from atmosphere room 1 and growth room 7 are separated by lower seal flange 8, and lower seal flange 8 can move up and down with ball-screw 17; Growth room 7 is made up of upper tongued and grooved flanges 6, silica tube 5, lower seal flange 8, uses ruhmkorff coil 4 pairs of crucibles to heat.
Before growth, crucible is passed through slidably pallet 13 and put into transition chamber, shut right tongued and grooved flanges 12, first vacuumized by air outlet interface II9, then start heating, and pass into rare gas element, control pressure by inlet mouth interface II14; , by ball-screw 17, lower seal flange 8 is put down meanwhile, after having dewatered, open left tongued and grooved flanges 15, crucible and insulation are placed on lower seal flange 8; Lower seal flange 8 rises, and insulation and crucible is brought in growth room, and completes sealing; Adjustment roll ballscrew 17 arrives growth needs position, starts to grow; After having grown, the above-mentioned loading furnace process of backstepping, completes blow-on.
In whole operating process, in isolated from atmosphere room 1 and growth room 7, be full of shielding gas always.
After having grown, mobile ruhmkorff coil, can carry out in-situ annealing.
Other parts in the present embodiment adopt known technology, do not repeat them here.
Claims (7)
1. the device for high-purity silicon carbide monocrystalline, comprise growth room (7), it is characterized in that: described growth room (7) are by upper tongued and grooved flanges (6), silica tube (5), lower seal flange (8) forms, the bottom of described growth room (7) is connected with isolated from atmosphere room (1), (1) is provided with action pane in isolated from atmosphere room, induction heater is arranged on the both sides of upper growth room, isolated from atmosphere room (1) by support (3), the side of isolated from atmosphere room (1) is connected with transition chamber (11), described transition chamber is provided with deimpurity heating unit in (11), described isolated from atmosphere room and transition chamber are equipped with the mechanism keeping internal medium to be in shielding gas state or vacuum state, the bottom of isolated from atmosphere room (1) is also provided with suction cleaner interface (18), the inside of described isolated from atmosphere room is provided with ball-screw (17), ball-screw (17) is connected with the lower seal flange (8) of growth room (7) bottom.
2. the device for high-purity silicon carbide monocrystalline according to claim 1, is characterized in that: described induction heater is telefault (4).
3. the device for high-purity silicon carbide monocrystalline according to claim 1, is characterized in that: the both sides of described transition chamber are respectively equipped with left tongued and grooved flanges (15) and right tongued and grooved flanges (12).
4. the device for high-purity silicon carbide monocrystalline according to claim 1, is characterized in that: described mechanism is vacuum extractor or the inlet mouth interface be arranged on the wall of respective space and air outlet interface and pressure controller.
5. according to the device for high-purity silicon carbide monocrystalline according to claim 1, it is characterized in that: described shielding gas is any one or mixtures several arbitrarily of argon gas, helium, hydrogen kind.
6. the device for high-purity silicon carbide monocrystalline according to claim 1, is characterized in that: the heating unit (10) of described transition chamber is Infrared heaters or resistance heater.
7. the device for high-purity silicon carbide monocrystalline according to claim 1, is characterized in that: at least two secondary operation gloves are installed at the peripheral operation window place of described isolated from atmosphere room (1).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520284502.1U CN204625830U (en) | 2015-05-05 | 2015-05-05 | A kind of device for high-purity silicon carbide monocrystalline |
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| CN201520284502.1U CN204625830U (en) | 2015-05-05 | 2015-05-05 | A kind of device for high-purity silicon carbide monocrystalline |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: A device for high -purity silicon carbide monocrystalline Effective date of registration: 20200622 Granted publication date: 20150909 Pledgee: China Co. truction Bank Corp Ji'nan hi tech sub branch Pledgor: SICC Co.,Ltd. Registration number: Y2020980003315 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20201119 Granted publication date: 20150909 Pledgee: China Co. truction Bank Corp Ji'nan hi tech sub branch Pledgor: Shandong Tianyue Advanced Materials Technology Co.,Ltd. Registration number: Y2020980003315 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| CP03 | "change of name, title or address" |
Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: 250101 Shandong Province, Lixia District of Ji'nan city high tech Zone Xinluo Avenue No. 2008 silver bearing building 3-409 Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |
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| CP03 | "change of name, title or address" |