CN204361129U - A kind of electrothermal module of non-equidistant arrangement - Google Patents
A kind of electrothermal module of non-equidistant arrangement Download PDFInfo
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- CN204361129U CN204361129U CN201420835350.5U CN201420835350U CN204361129U CN 204361129 U CN204361129 U CN 204361129U CN 201420835350 U CN201420835350 U CN 201420835350U CN 204361129 U CN204361129 U CN 204361129U
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- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 210000003141 lower extremity Anatomy 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 230000008646 thermal stress Effects 0.000 abstract description 6
- 238000003466 welding Methods 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000035882 stress Effects 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 3
- 238000005057 refrigeration Methods 0.000 description 3
- 229920006335 epoxy glue Polymers 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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- Devices That Are Associated With Refrigeration Equipment (AREA)
Abstract
The utility model discloses the electrothermal module of a kind of non-equidistant arrangement, comprise upper and lower base plate, thermoelectric components between upper and lower base plate and flow deflector, upper substrate comprises the upper assembly district of arrangement thermoelectric components, infrabasal plate comprises lower assembly district and the wire draw-out area of arrangement thermoelectric components, each semiconductor element in upper assembly district and lower assembly district is non-equidistant arrangement, the semiconductor element of the utility model electrothermal module adopts non-equidistant arrangement design, can larger hot operation deformation region be had or there is larger welding shear stress region raising refrigerating capacity as required, promote this region absorption thermal stress ability, eliminate deformation, extend the useful life of corresponding component.
Description
Technical field
The utility model relates to a kind of electrothermal module, refer more particularly to a kind of can extend thermoelectric cooling module life, reduce use cost non-equidistant arrangement thermoelectric cooling module.
Background technology
Conventional thermoelectric cooling module module as shown in Figure 1 at present, general is all by upper and lower base plate, flow deflector and semiconductor element composition, its operation principle utilizes peltier effect, after energising, on substrate, lower surface is refrigeration and heat release respectively, the huyashi-chuuka (cold chinese-style noodles) will the device of cooling being needed to be affixed on thermoelectric cooling module during use, the refrigerating function to device can be realized, the semiconductor element layout of cold generating module is the uniformity of foundation temperature and adopts equidistant arrangement, and adopt rectangle flow deflector, as shown in Figure 3 and Figure 4, the horizontal spacing L1 of semiconductor element arrangement is equal, longitudinal pitch L2 is also uniform, simultaneously, the current circuit major part of semiconductor element is also be consistent with the longitudinal direction of substrate and power supply input and output direction, current direction as shown in Figure 2, this conventional thought design easily, production and processing is convenient, but in product actual motion, by to the analysis of life failure phenomenon and verify further, find that this conventional design is too idealized, the useful life of thermoelectric cooling module is limited to some extent.
Utility model content
The utility model mainly solves existing thermoelectric cooling module and adopts equidistant semiconductor element to arrange and rectangle baffle design, the technical problem that causes module to limit to some extent useful life; Provide a kind of can extend thermoelectric cooling module life, reduce use cost non-equidistant arrangement thermoelectric cooling module.
In order to solve the technical problem of above-mentioned existence, the utility model mainly adopts following technical proposals:
The electrothermal module of a kind of non-equidistant arrangement of the present utility model, comprise upper substrate and infrabasal plate, the thermoelectric components be made up of P type semiconductor element and N type semiconductor element between upper and lower base plate and weld with semiconductor element and be fixedly arranged on the flow deflector of substrate inner surface, described semiconductor element is mutually connected and is formed single loop operating circuit, described upper substrate and infrabasal plate are all rectangle and infrabasal plate area is greater than upper substrate area, upper substrate comprises the upper assembly district of arrangement thermoelectric components, infrabasal plate comprises lower assembly district and the wire draw-out area of arrangement thermoelectric components, described upper assembly district is corresponding with lower assembly district, each semiconductor element in upper assembly district and lower assembly district is non-equidistant arrangement, semiconductor element adopts non-equidistant arrangement design, can larger hot operation deformation region be had or there is larger welding shear stress region raising refrigerating capacity as required, promote this region absorption thermal stress ability, eliminate deformation, extend the useful life of corresponding component.
As preferably, be positioned at described upper assembly district and the semiconductor element of arranging along upper substrate length direction, its horizontal spacing above substrate surface center line is that baseline successively increases progressively end to the left and right, its longitudinal pitch above substrate lower limb upwards successively increases progressively, the semiconductor element arrangement of upper assembly district is in the structure that lower dense top is sparse and intensive both sides, middle part are sparse, be positioned at described lower assembly district and the semiconductor element of arranging along infrabasal plate length direction, its horizontal spacing with lower substrate surface center line for baseline successively increases progressively end to the left and right, its longitudinal pitch upwards successively increases progressively with lower limb, the semiconductor element arrangement of lower assembly district is in the structure that lower dense top is sparse and intensive both sides, middle part are sparse, have in the middle part of electrothermal module and to arrange more semiconductor element compared with the zone line of large deformation, improve the ability that zone line absorbs thermal stress, can effective resist substrate self-deformation, and substrate lower area is owing to being provided with detecting element and wire draw-out area, also easily high temperature deformation is produced, promote the arrangement density of this place's semiconductor element, also contribute to improving this zone refrigeration ability, resist substrate self-deformation, extend the useful life of electrothermal module.
As preferably, the horizontal spacing increase coefficient of described semiconductor element arrangement is 1.05, and longitudinal pitch increase coefficient is 1.03.
As preferably, the flow deflector of arranging in described upper assembly district is rectangle and its both ends are curved, the flow deflector of described lower assembly district arrangement is rectangle and its both ends are curved, the baffle end of arcuate structure can effectively absorb or decompose the thermal stress that semiconductor element produces at work, improves reliability and the useful life of semiconductor element.
As preferably, described flow deflector both ends are semicircular arc, can reduce shear stress when flow deflector welds with semiconductor element.
As preferably, the flow deflector arragement direction of described upper assembly district zone line is consistent with upper substrate length direction, the flow deflector arragement direction of described lower assembly district zone line is consistent with infrabasal plate length direction, the sense of current is vertical with power supply input and output direction along the length direction of substrate, shorten current circuit, reduce along journey current loss, product is responded accelerate, refrigeration speed is increased.
As preferably, described baseplate material is pottery, and described flow deflector is copper sheet, flow deflector and substrate inner surface sintered combined.
As preferably, described baseplate material is epoxy glue, described flow deflector is copper sheet, flow deflector and substrate inner surface lamination compound, due to the substrate poor heat conduction of epoxy glue material, operationally easily produce comparatively large deformation, therefore, the ability of the substrate absorption thermal stress of the densely arranged semiconductor element in middle part strengthens to some extent, effectively can resist the substrate self-deformation in the course of work.
The beneficial effects of the utility model are: the semiconductor element of thermoelectric cooling module adopts non-equidistant arrangement design, can larger hot operation deformation region be had or there is larger welding shear stress region enhancing refrigerating capacity as required, promote the ability of this region absorption thermal stress, substrate self-deformation in effective resistance course of work or welding deformation, extend reliability and the useful life of each parts.
Accompanying drawing explanation
Fig. 1 is the cold generating module structural representation of routine techniques.
Fig. 2 is Fig. 1 cold generating module operating circuit schematic diagram.
Fig. 3 is the upper substrate flow deflector arrangement schematic diagram in Fig. 1 structure.
Fig. 4 is the infrabasal plate flow deflector arrangement schematic diagram in Fig. 1 structure.
Fig. 5 is cold generating module structural representation of the present utility model.
Fig. 6 is Fig. 5 cold generating module operating circuit schematic diagram.
Fig. 7 is the upper substrate flow deflector arrangement schematic diagram in Fig. 5 structure.
Fig. 8 is the infrabasal plate flow deflector arrangement schematic diagram in Fig. 5 structure.
1. upper substrates in figure, assembly district, 2. infrabasal plate on 11., 21. times assembly districts, 22. wire draw-out area, 3. thermoelectric components, 31.P type semiconductor element, 32.N type semiconductor element, 4. flow deflector, 5. external wire.
Embodiment
Below by embodiment, and by reference to the accompanying drawings, the technical solution of the utility model is described in further detail.
Embodiment: the electrothermal module of a kind of non-equidistant arrangement of the present embodiment, as shown in Figure 5, comprise upper substrate 1 and infrabasal plate 2, the thermoelectric components 3 be made up of P type semiconductor element 31 and N type semiconductor element 32 between upper and lower base plate and weld with semiconductor element and be positioned at the flow deflector 4 of substrate inner surface, flow deflector is all rectangle and its both ends are semicircular arc, upper and lower base plate is ceramic substrate, flow deflector is copper sheet and sinters the inner surface at ceramic substrate, semiconductor element is mutually connected and is formed single loop operating circuit, upper substrate and infrabasal plate are all rectangle and infrabasal plate area is greater than upper substrate area, upper substrate comprises the upper assembly district 11 of arrangement thermoelectric components, infrabasal plate comprises lower assembly district 21 and the wire draw-out area 22 of arrangement thermoelectric components, upper assembly district is corresponding with lower assembly district, each semiconductor element in upper assembly district and lower assembly district is non-equidistant arrangement, wire draw-out area is welded with external wire 5, as shown in Figure 7, be positioned at assembly district and the semiconductor element of arranging along upper substrate length direction, its horizontal spacing above substrate surface center line M-N is that baseline successively increases progressively end to the left and right, L6 < L7 < L8, increase coefficient is 1.05, its longitudinal pitch above substrate lower limb upwards successively increases progressively, L3 < L4 < L5, increase coefficient is 1.03, the semiconductor element arrangement of upper assembly district is in the structure that lower dense top is sparse and intensive both sides, middle part are sparse, as shown in Figure 8, be positioned at lower assembly district and the semiconductor element of arranging along infrabasal plate length direction, its horizontal spacing with lower substrate surface center line for baseline successively increases progressively end to the left and right, increase coefficient is 1.05, its longitudinal pitch upwards successively increases progressively on edge with edge under infrabasal plate, increase coefficient is 1.03, the semiconductor element arrangement of lower assembly district is also in the structure that lower dense top is sparse and intensive both sides, middle part are sparse, simultaneously, as shown in Figure 6, the flow deflector arragement direction of upper assembly district zone line is consistent with upper substrate length direction, the flow deflector arragement direction of lower assembly district zone line is consistent with infrabasal plate length direction.
During making, first flow deflector is placed in ceramic surface and in high temperature furnace, carries out high temperature sintering together with pottery, form the upper and lower base plate being placed with flow deflector, the special scolding tin of one deck is smeared respectively again on the flow deflector of upper and lower base plate inner surface, P type semiconductor element and N type semiconductor element are placed on the relevant position of infrabasal plate flow deflector, cover upper substrate, special fixture is utilized to be fixedly clamped by upper and lower base plate, deliver to firing equipment and carry out high-temperature heating, complete the welding sequence of assembly, realize the connection of semiconductor element and upper and lower base plate thus, finally the parts welded are placed in chill station and cool, complete the course of processing of whole cold generating module.
Through comparative trial of life-span: adopt the cold generating module of conventional structure through 1.2 ten thousand circular flow, failure phenomenon appears in product; And adopt the cold generating module with non-equidistant arrangement and arc end part flow deflector structure of the present utility model, then just occur failure phenomenon through 2.5 ten thousand circular flow, therefore, life of product improves 2.08 times, significantly extend the useful life of product, reduce use cost.
In description of the present utility model, technical term " on ", D score, " front ", " afterwards ", " left side ", " right side ", " indulge ", " horizontal stroke ", " interior ", " outward " etc. represent that direction or position relationship are based on direction shown in the drawings or position relationship, be only for convenience of description with understand the technical solution of the utility model, more than illustrate and not restriction has been done to the utility model, the utility model is also not limited only to the citing of above-mentioned explanation, the change that those skilled in the art make in essential scope of the present utility model, remodeling, increase or replace, all should be considered as protection range of the present utility model.
Claims (8)
1. the electrothermal module of a non-equidistant arrangement, comprise upper substrate (1) and infrabasal plate (2), the thermoelectric components (3) be made up of P type semiconductor element and N type semiconductor element between upper and lower base plate and weld with semiconductor element and be fixedly arranged on the flow deflector (4) of substrate inner surface, described semiconductor element is mutually connected and is formed single loop operating circuit, it is characterized in that: described upper substrate and infrabasal plate are all rectangle and infrabasal plate area is greater than upper substrate area, upper substrate comprises the upper assembly district (11) of arrangement thermoelectric components, infrabasal plate comprises lower assembly district (21) and wire draw-out area (22) of arrangement thermoelectric components, described upper assembly district is corresponding with lower assembly district, each semiconductor element in upper assembly district and lower assembly district is.
2. the electrothermal module of a kind of non-equidistant arrangement according to claim 1, it is characterized in that: be positioned at described upper assembly district and the semiconductor element of arranging along upper substrate length direction, its horizontal spacing above substrate surface center line is that baseline successively increases progressively end to the left and right, its longitudinal pitch above substrate lower limb upwards successively increases progressively, the semiconductor element arrangement of upper assembly district is in the structure that lower dense top is sparse and intensive both sides, middle part are sparse, be positioned at described lower assembly district and the semiconductor element of arranging along infrabasal plate length direction, its horizontal spacing with lower substrate surface center line for baseline successively increases progressively end to the left and right, its longitudinal pitch upwards successively increases progressively with infrabasal plate lower limb, the semiconductor element arrangement of lower assembly district is in the structure that lower dense top is sparse and intensive both sides, middle part are sparse.
3. the electrothermal module of a kind of non-equidistant arrangement according to claim 2, is characterized in that: the horizontal spacing increase coefficient of described semiconductor element arrangement is 1.05, and longitudinal pitch increase coefficient is 1.03.
4. the electrothermal module of a kind of non-equidistant arrangement according to claim 1 or 2 or 3, it is characterized in that: the flow deflector (4) of arranging in described upper assembly district (11) is rectangle and its both ends are curved, the flow deflector of arranging in described lower assembly district (21) is rectangle and its both ends are curved.
5. the electrothermal module of a kind of non-equidistant arrangement according to claim 4, is characterized in that: described flow deflector (4) both ends are semicircular arc.
6. the electrothermal module of a kind of non-equidistant arrangement according to claim 4, it is characterized in that: flow deflector (4) arragement direction of described upper assembly district (11) zone line is consistent with upper substrate (1) length direction, flow deflector (4) arragement direction of described lower assembly district (21) zone line is consistent with infrabasal plate (2) length direction.
7. the electrothermal module of a kind of non-equidistant arrangement according to claim 1, is characterized in that: described baseplate material is pottery, and described flow deflector is copper sheet, flow deflector and substrate inner surface sintered combined.
8. the electrothermal module of a kind of non-equidistant arrangement according to claim 1, it is characterized in that: described baseplate material is epoxy offset plate, described flow deflector is copper sheet, flow deflector and substrate inner surface lamination compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420835350.5U CN204361129U (en) | 2014-12-24 | 2014-12-24 | A kind of electrothermal module of non-equidistant arrangement |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420835350.5U CN204361129U (en) | 2014-12-24 | 2014-12-24 | A kind of electrothermal module of non-equidistant arrangement |
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| Publication Number | Publication Date |
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| CN204361129U true CN204361129U (en) | 2015-05-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420835350.5U Active CN204361129U (en) | 2014-12-24 | 2014-12-24 | A kind of electrothermal module of non-equidistant arrangement |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681708A (en) * | 2014-12-24 | 2015-06-03 | 杭州大和热磁电子有限公司 | Thermoelectric module with non-equidistant arrangement |
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2014
- 2014-12-24 CN CN201420835350.5U patent/CN204361129U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681708A (en) * | 2014-12-24 | 2015-06-03 | 杭州大和热磁电子有限公司 | Thermoelectric module with non-equidistant arrangement |
| CN104681708B (en) * | 2014-12-24 | 2018-09-04 | 杭州大和热磁电子有限公司 | A kind of electrothermal module of non-equidistant arrangement |
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