CN204347303U - Silicon based silicon dioxide wave and detector perpendicular coupling structure - Google Patents
Silicon based silicon dioxide wave and detector perpendicular coupling structure Download PDFInfo
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- CN204347303U CN204347303U CN201420742388.8U CN201420742388U CN204347303U CN 204347303 U CN204347303 U CN 204347303U CN 201420742388 U CN201420742388 U CN 201420742388U CN 204347303 U CN204347303 U CN 204347303U
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Abstract
The utility model belongs to the integrated and technical field of photoelectric detection of photoelectricity, discloses a kind of silicon based silicon dioxide wave and detector perpendicular coupling structure, comprising: substrate, waveguide, top covering and detector; Substrate is silicon substrate, it forms waveguide, waveguide forms top covering, top covering forms depression by thin, waveguide body electrode is formed in depression, detector photosurface uses guide-lighting resin bed and waveguide-coupled, and in waveguide, the transmission direction of light is vertical with the lead direction of detector light, and detector electrodes is connected by conductive resin layer with waveguide body electrode.The utility model, by adopting the mode of resin bonding, instead of the semiconductor technology that Traditional photovoltaic integrated approach uses, and cost of manufacture reduces; Vertical coupled method uses waveguide top surface detection light intensity simultaneously, and detection range is long, and coupling accuracy requires less; Relative to exiting surface detection scheme, integrated opto-electronics device is upgraded to three-dimensional structure from planar structure, and the reliability that is coupled is higher.
Description
Technical field
The utility model belongs to the integrated and technical field of photoelectric detection of photoelectricity, relates to a kind of silicon based silicon dioxide wave and detector perpendicular coupling structure.
Background technology
Integrated optical circuit is widely used in optical communication field.Under normal circumstances, for detecting light intensity in waveguide, needing to utilize the structure such as optical fiber or lens, making it enter detector assembly from the coupling luminous signal of waveguide exiting surface.
Use the method integration degree of discrete waveguide and detector low, easily bring integrity problem and capacity issue.For solving the problem, relevant photoelectricity integrated approach is had to emerge.As patent 200410040306.6, give a kind of method for making of single-chip integration photoelectricity loop, the method makes light circuit and explorer portion on same substrate simultaneously, and light signal is drawn out to detector end by recycling organic material fill method.Patent 200910147801.X gives a kind of technology utilizing silicon-on-insulator to make similar photoelectricity integrated morphology.Above-mentioned photoelectricity integrated approach solves the integrity problem of discrete detecting element, but cost is higher, and production efficiency is low.
Above-mentioned photoelectricity integrated approach is by light from the coupling of waveguide exiting surface, and these class methods exist following not enough: 1. optical fiber or the lens of exiting surface end connection increase device volume; 2. exiting surface can only, as waveguide terminal, use such coupling process cannot detect the signal of transmission light in waveguide.
Utility model content
(1) technical matters that will solve
The technical problems to be solved in the utility model is: provide a kind of silicon based silicon dioxide wave and detector perpendicular coupling structure, realize the small volume of coupled structure, and its exiting surface as waveguide terminal, can not only can also detect the signal of transmission light in waveguide.
(2) technical scheme
In order to solve the problems of the technologies described above, the utility model provides a kind of silicon based silicon dioxide wave and detector perpendicular coupling structure, and it comprises: substrate 1, waveguide 2, top covering 3 and detector 4; Described substrate 1 is silicon substrate, it forms waveguide 2, waveguide 2 is formed top covering 3, on top covering 3, the position of detector 4 to be formed forms depression by thin top covering 3, waveguide body electrode 5 is formed in depression, detector 4 photosurface uses guide-lighting resin bed 6 to be coupled with waveguide 2, and in waveguide 2, the transmission direction of light is vertical with the lead direction of detector 4 light, and detector electrodes is connected by conductive resin layer 7 with waveguide body electrode 5.
Wherein, detector detectable signal is drawn out to pin or amplifying circuit by spun gold pressure welding by described waveguide body electrode 5.
Wherein, described waveguide 2 and detector 4 independently make, and realize coupling by guide-lighting resin and electroconductive resin.
Wherein, described substrate 1 comprises silicon substrate and is formed in the silicon dioxide cushion above silicon substrate, and waveguide 2 is formed in above silicon dioxide cushion.
Wherein, the thin of described top covering 3 need meet: when light is all drawn by needs, then by top covering remove to waveguide depth, as needs part light draw time, then remove the segment thickness of top covering.
(3) beneficial effect
The silicon based silicon dioxide wave that technique scheme provides and detector perpendicular coupling structure, by adopting the mode of resin bonding, instead of the semiconductor technology that Traditional photovoltaic integrated approach uses, and cost of manufacture reduces; Vertical coupled method uses waveguide top surface detection light intensity simultaneously, and detection range is long, and coupling accuracy requires less; Relative to exiting surface detection scheme, integrated opto-electronics device is upgraded to three-dimensional structure from planar structure, and the reliability that is coupled is higher.
Accompanying drawing explanation
Fig. 1 is the one-piece construction schematic diagram of the utility model embodiment silicon based silicon dioxide wave and detector perpendicular coupling structure;
Fig. 2 is the centre sectional view of the utility model embodiment silicon based silicon dioxide wave and detector perpendicular coupling structure;
Fig. 3 is the centre sectional view partial enlarged drawing of the utility model embodiment silicon based silicon dioxide wave and detector perpendicular coupling structure;
Fig. 4 is the utility model embodiment silicon based silicon dioxide wave and the waveguide body part of detector perpendicular coupling structure before coupled detector.
In figure: 1-substrate; 2-waveguide; 3-top covering; 4-detector; 5-waveguide body electrode; The guide-lighting resin bed of 6-; 7-conductive resin layer.
Embodiment
For making the purpose of this utility model, content and advantage clearly, below in conjunction with drawings and Examples, embodiment of the present utility model is described in further detail.
In description of the present utility model, it should be noted that, term " on ", D score, "left", "right", " top ", " end ", " interior ", the orientation of the instruction such as " outward " or position relationship be based on orientation shown in the drawings or position relationship, only the utility model and simplified characterization for convenience of description, instead of the device of instruction or hint indication or element must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as restriction of the present utility model.In addition, term " first ", " second ", " the 3rd " only for describing object, and can not be interpreted as instruction or hint relative importance.
In description of the present utility model, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " connection " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be direct connection, also can be indirectly connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, the concrete meaning of above-mentioned term in the utility model can be understood depending on concrete condition.
In addition, in description of the present utility model, except as otherwise noted, the implication of " multiple " is two or more.
The purpose of this utility model reduces device volume to strengthen reliability; evade the problem of monolithic optoelectronic integration high cost simultaneously; correspondingly; one-piece construction of the present utility model as shown in Figure 1; as shown in Figures 2 to 4, wherein SiO 2 waveguide 2 makes on substrate 1 partial structurtes, waveguide 2 is formed top covering 3; top covering 3 pairs of Waveguides play constraint effect, reduce loss and protect waveguide.
Make perpendicular coupling structure to need in position to remove top covering 3, to form depression, waveguide body electrode 5 is made in the depression formed after removing top covering 3 subsequently, utilizing semiconductor technology to make detector 4 and being placed on by detector 4 removes in the depression that formed of top covering 3, detector 4 photosurface uses guide-lighting resin bed 6 to be coupled with waveguide 2, in waveguide 2, the transmission direction of light is vertical with the lead direction of detector light, both realizations vertical coupled, detector electrodes and waveguide body electrode 5 use conductive resin layer 7 to be connected.Waveguide body electrode 5 utilizes spun gold pressure welding, detector detectable signal can be drawn out to pin or amplifying circuit, realize the detection to transmission light in waveguide.In the enlarged fragmentary cross section of Fig. 3, the position of waveguide 2 and guide-lighting resin bed 6 and conductive resin layer 7 can be seen comparatively clearly.
In the present embodiment, relative to other photoelectricity integrated approaches, waveguide body and detector make respectively, and the two connects by recycling adhering resin; Relative to other coupling process, Waveguide is coupled out from upper surface and enters detector photosurface by guide-lighting resin; Waveguide body makes electrode as Fig. 4, and signal, in waveguide body, is drawn by waveguide body electrode 5 by detector 4 left-hand thread.
The manufacturing process of the present embodiment silicon based silicon dioxide wave and detector perpendicular coupling structure is as follows:
(1) make silicon based silicon dioxide wave, conventional waveguide fabrication technique has PECVD etc.Because silicon substrate 1 refractive index is higher, therefore make silicon dioxide cushion above it before use.Deposit waveguide 2 subsequently, utilize the method for doping to regulate the refractive index of waveguide 2, deposition top covering 3 plays the constraint effect to light subsequently, reduces loss.
(2) conventional semiconductor process is utilized to make photodetector.Photodetector photosensitive area should be able to cover waveguide region.Detector electrodes is all positioned at same plane with photosensitive area.
(3) in waveguide body, need the local, position of coupled detector to remove waveguide top covering 3.This removal process can adopt the kinds of processes means such as reactive plasma etching technics (RIE), and its core is to control to remove thickness.As light is all drawn by needs, then top covering is removed to waveguide depth, as needs part light is drawn, then only need remove the segment thickness of top covering.
(4) waveguide body electrode is made in the depression formed after removing top covering.Concrete grammar is, titanizing layer gold after utilizing photoetching making to grind, electrode shape and position need match with detector electrodes.
(5) select guide-lighting resin as required, as light is all drawn by needs, then first according to step (3) described removal waveguide top covering, selective refraction rate is subsequently greater than the resin of waveguide 2 as guide-lighting resin.As the light splitting of needs lead division, then first according to step (3) described removal waveguide top covering, the resin close with waveguide 2 of selective refraction rate is subsequently to form coupled mode.
(6) apply guide-lighting resin bed 6 in waveguide 2 position of waveguide body, at electrode position coated with conductive resin bed 7, place detector 4, guide-lighting resin bed 6 is connected with photosensitive area, and conductive resin layer 7 is connected with detector electrodes.Impose certain pressure at detector 4 back side, this power plays the effect ensureing that detector position is constant, and this power should not be excessive simultaneously, avoids guide-lighting resin bed 6 to mix with conductive resin layer 7.
(7) solidify guide-lighting resin bed 6 and conductive resin layer 7 under keeping the condition of pressure, complete the making of whole perpendicular coupling structure.
As can be seen from technique scheme, the utility model by adopting the mode of resin bonding, instead of the semiconductor technology that Traditional photovoltaic integrated approach uses by the utility model, and cost of manufacture reduces.Vertical coupled method uses waveguide top surface detection light intensity simultaneously, and detection range is long, and coupling accuracy requires less.Relative to exiting surface detection scheme, integrated opto-electronics device is upgraded to three-dimensional structure from planar structure, and the reliability that is coupled is higher.
The above is only preferred implementation of the present utility model; should be understood that; for those skilled in the art; under the prerequisite not departing from the utility model know-why; can also make some improvement and distortion, these improve and distortion also should be considered as protection domain of the present utility model.
Claims (5)
1. silicon based silicon dioxide wave and a detector perpendicular coupling structure, is characterized in that, comprising: substrate (1), waveguide (2), top covering (3) and detector (4), described substrate (1) is silicon substrate, it forms waveguide (2), waveguide (2) is formed top covering (3), the position of the upper detector to be formed (4) of top covering (3) forms depression by thin top covering (3), waveguide body electrode (5) is formed in depression, detector (4) photosurface uses guide-lighting resin bed (6) to be coupled with waveguide (2), in waveguide (2), the transmission direction of light is vertical with the lead direction of detector (4) light, detector electrodes is connected by conductive resin layer (7) with waveguide body electrode (5).
2. silicon based silicon dioxide wave as claimed in claim 1 and detector perpendicular coupling structure, is characterized in that, detector detectable signal is drawn out to pin or amplifying circuit by spun gold pressure welding by described waveguide body electrode (5).
3. silicon based silicon dioxide wave as claimed in claim 1 and detector perpendicular coupling structure, it is characterized in that, described waveguide (2) and detector (4) independently make, and realize coupling by guide-lighting resin and electroconductive resin.
4. silicon based silicon dioxide wave as claimed in claim 1 and detector perpendicular coupling structure, it is characterized in that, described substrate (1) comprises silicon substrate and is formed in the silicon dioxide cushion above silicon substrate, and waveguide (2) is formed in above silicon dioxide cushion.
5. silicon based silicon dioxide wave as claimed in claim 1 and detector perpendicular coupling structure, it is characterized in that, described top covering (3) thin need meet: when light is all drawn by needs, then top covering is removed to waveguide depth, as needs part light draw time, then remove the segment thickness of top covering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420742388.8U CN204347303U (en) | 2014-12-01 | 2014-12-01 | Silicon based silicon dioxide wave and detector perpendicular coupling structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420742388.8U CN204347303U (en) | 2014-12-01 | 2014-12-01 | Silicon based silicon dioxide wave and detector perpendicular coupling structure |
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| CN204347303U true CN204347303U (en) | 2015-05-20 |
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| CN201420742388.8U Withdrawn - After Issue CN204347303U (en) | 2014-12-01 | 2014-12-01 | Silicon based silicon dioxide wave and detector perpendicular coupling structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104330858A (en) * | 2014-12-01 | 2015-02-04 | 中国航天科工集团第三研究院第八三五八研究所 | Silicon-based silica waveguide and detector vertical coupling structure and preparation method thereof |
| CN106876418A (en) * | 2017-03-14 | 2017-06-20 | 北京邮电大学 | A kind of photodetector array |
-
2014
- 2014-12-01 CN CN201420742388.8U patent/CN204347303U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104330858A (en) * | 2014-12-01 | 2015-02-04 | 中国航天科工集团第三研究院第八三五八研究所 | Silicon-based silica waveguide and detector vertical coupling structure and preparation method thereof |
| CN104330858B (en) * | 2014-12-01 | 2016-08-10 | 中国航天科工集团第三研究院第八三五八研究所 | Silicon based silicon dioxide wave and detector perpendicular coupling structure and preparation method thereof |
| CN106876418A (en) * | 2017-03-14 | 2017-06-20 | 北京邮电大学 | A kind of photodetector array |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20150520 Effective date of abandoning: 20160810 |
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| C25 | Abandonment of patent right or utility model to avoid double patenting |