CN204303793U - Based on CNT transfer and the flexible TFT backboard of self-aligned technology - Google Patents
Based on CNT transfer and the flexible TFT backboard of self-aligned technology Download PDFInfo
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- CN204303793U CN204303793U CN201420748583.1U CN201420748583U CN204303793U CN 204303793 U CN204303793 U CN 204303793U CN 201420748583 U CN201420748583 U CN 201420748583U CN 204303793 U CN204303793 U CN 204303793U
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- Thin Film Transistor (AREA)
Abstract
The utility model provides a kind of based on CNT transfer and the flexible TFT backplate of self-aligned technology, makes the some unit justifying spray printing CNT that are made up of grid, source electrode and drain electrode on flexible substrates; Remake the first layer pattern, etch exposed CNT; Second layer pattern of preparation and adjacent two grids and source contact therebetween; Prepare the insulating layer of thin-film of grid wire jumper and upper band through hole thereof; Contact with drain electrode with conductive ink filling vias and be solidified into conductive film; Some pixel electrode unit are formed along unit cutting conductive film.The conventional flex substrate preparation technology that the alternative complex and expensive of the utility model is consuming time, enhances productivity, and reduces production cost; CNT is prepared by spray printing, does not need high-temperature work environment, and flexible parent metal heat shrinkable can not be caused to bend.The role of insulating barrier and etching mask played the part of by justifying spray printing CNT recycling polymeric material, and the aligning accuracy of the CNT of preparation is higher.
Description
Technical field
The utility model relates to a kind of flexible TFT backplate, particularly relates to a kind of based on CNT transfer and the flexible TFT backplate of self-aligned technology.
Background technology
Prevailing LCDs is just as the Display Panel of calculator, its pictorial element is by voltage Direct driver, can not have influence on other unit when a control unit, when pixel quantity is increased to greatly as with 1,000,000 timing, this mode just seems unrealistic.If pixel aligned and row, connecting line quantity can be reduced to thousands of, such problem seems really can be resolved: all pixels in row are all driven by a positive potential, and all pixels in a line are all driven by a negative potential, then row has maximum voltage with the crosspoint pixel of row and is switched state.But this method still defectiveness, although be namely that the voltage that other pixels of same a line or same row are subject to is only partial value, this part switches still can make darken pixels.
At present best solution is that each pixel is added one and attached troops to a unit in its transistor switch, and each pixel can be independently controlled.Meaning representated by the low leakage characteristic that transistor has is that the voltage being applied to pixel can not be lost arbitrarily before frame updating.This kind of circuit arrangement mode is similar to dynamic random access memory very much, and only whole framework is not build on Silicon Wafer, but is built in (Thin-Film Transistor, TFT) on the substrate of glass and so on.
Substantially all TFT substrate all non-refractories, so the manufacturing process of TFT must carry out at relatively low temperature, used silicon layer is the non-crystalline silicon or polysilicon layer that utilize silicide gas to produce, the more high performance TFT of development need of contemporary Display Technique is to drive LCD pixel and AMOLED pixel, it is simple that non-crystalline silicon tft has preparation technology, the advantage that homogeneity is good, but its mobility is lower, cannot meet the requirement to driving; Although low temperature polycrystalline silicon migration is higher, it needs laser assisted annealing and manufacturing cost is too high, and polysilicon volume production homogeneity is poor, cannot meet the demand that the high-resolution display of large area is produced.
Flexible Displays has frivolous, flexible feature, can be used for the display screen manufacturing the display device such as e-book, mobile phone.This class display softness can be portable, and resistance to impact is strong, can realize curling display; But current plastic-substrates, profile pattern is poor, and the projection of surperficial micron dimension can cause device failure, poor reliability; Thermal coefficient of expansion simultaneously due to different rete in transistor preparation process is different, and the growth, heat treatment etc. of film all can cause the impacts such as bending contraction to it, are unfavorable for that litho pattern is aimed at, are also unfavorable for that panel makes.
CNT (Carbon Nanotube, CNT) is a kind of carbon molecule of tubulose, different according to the number of plies of pipe, be divided into single wall and multi-walled carbon nano-tubes, the radial direction of pipe is very thin, only has nanoscale, is then tens of to hundreds of micron in axis.Due to the structure that it is special, CNT has some special electrical properties, by changing manufacturing process adjustment CNT internal structure, thus can show single insulating properties, semiconductor or metallicity in particular directions, electrical conductivity is controlled and reach as high as 10,000 times of copper.The CNT mechaanical property of materials is excellent, and quite, waterproof, resistance toly knocks scraping for hardness and diamond; Toughness is strong, can restore to the original state immediately after stretch bending.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of flexible TFT backplate based on CNT transfer and self-aligned technology and preparation method thereof, make carbon nano pipe array figure and the problem making complex process loaded down with trivial details for solving in prior art, and solve the problem of high-accuracy low serious forgiveness in prior art.
For achieving the above object and other relevant objects, the utility model provides a kind of based on CNT transfer and the flexible TFT backplate preparation method of self-aligned technology, and described preparation method at least comprises: the flexible base board that (1) provides to be provided with micro-structural coining pattern; Described micro-structural coining pattern comprises the some unit be made up of grid, source electrode and drain electrode; Described unit by matrix distribution and in this matrix often row adjacent cells share a grid, often row adjacent cells share a source electrode, this source electrode composition these two adjacent cells grid, drain electrode between and extend outside described grid; And metal is filled in the groove that described coining pattern is formed, form conducting wire; (2) one deck CNT is covered in the scope justifying at the source electrode of described some unit, grid and drain electrode place; (3) on described CNT, some first layer pattern are made; The source electrode of the projection of described first layer pattern on described flexible base board and each unit and drain electrode and between the region at channel region place have overlapping; (4) etching is not by the CNT of described first layer pattern covering; (5) between the described grid often arranging adjacent two unit preparation and these two unit grid and between the second layer pattern of contacting with each other of source electrode; (6) horizontal T-shaped metal structure is prepared as grid wire jumper; The both arms of described T-shaped metal structure to be arranged on described second layer pattern and to contact with the grid often arranging adjacent two unit; The source electrode of the projection on this flexible base board of the main part of described T-shaped metal structure and each unit and overlapping and its width of draining do not exceed the width of described first layer pattern; (7) on described grid wire jumper, make one deck cover described some unit and with the insulating layer of thin-film of some through holes, described some through holes are positioned on the drain electrode of described each unit; (8) in described step (7) with the insulating layer of thin-film of through hole utilizes conductive ink make layer of conductive film; Conductive ink is packed into described through hole and contacts with described drain electrode and solidify; (9) some pixel electrode unit are formed along the described unit cutting conductive film be positioned on described insulating layer of thin-film.
Preferably, the method that the micro-structural coining pattern in described step (1) is formed applies UV glue on described flexible base board, and recycling tailored template and curing apparatus impress out microstructure graph on described UV glue.
Preferably, the method for filling metal in described step (1) in the groove that described coining pattern is formed is utilize plating, scrape or the method for spray printing; The metal filled is copper or silver etc.
Preferably, the yardstick of described microstructure graph is micro-nano rank; Justifying covers the method for described CNT in described step (2) is any one in spray printing, transfer or sputtering.
Preferably, the material of the described CNT in described step (2) is characteristic of semiconductor.
Preferably, the method making described first layer pattern in described step (3) utilizes Printing techniques on described CNT, make polymer insulation layer and obtain.
Preferably, the source electrode of the projection of the first layer pattern in described step (3) on described flexible base board and each unit and drain electrode and between the area part at channel region place overlapping.
Preferably, in described step (4), the method for the described CNT of etching is solution corrosion method or dry etching.
Preferably, the material of the second layer pattern in described step (5) is polymer insulation layer, and the method making described second layer pattern adopts the mode of spray printing.
Preferably, the technique making described grid wire jumper in described step (6) is Printing techniques.
Preferably, the drain electrode of each unit described in described step (7) there is one from the described through hole of described insulating layer of thin-film.
Preferably, the method making described conductive film in described step (8) is screen printing technique or ink-jet printing technology.
Preferably, in described step (9), the method for the described conductive film of cutting is radium-shine cutting technique.
The utility model also provides a kind of based on CNT transfer and the flexible TFT backplate of self-aligned technology, and the structural representation in each stage of prepared flexible TFT backplate as shown in Figures 1 to 9.Described flexible TFT backplate at least comprises: the flexible base board being provided with micro-structural coining pattern; Described micro-structural coining pattern comprises the some unit be made up of grid, source electrode and drain electrode; Be covered in the source electrode of described each unit and drain electrode and between the CNT of channel region; Be positioned at the first layer pattern on described CNT; Described first layer pattern is covered in the source electrode of described unit and the region at drain electrode place; Between the grid of described adjacent two unit and and the grid of these two unit and between the second layer pattern of contacting with each other of source electrode; Both arms are positioned at the T-shaped metal structure contacted on described second layer pattern and with the grid of adjacent two unit, and source electrode and the drain electrode of the projection on this flexible base board of the main part of this T-shaped metal structure and each unit have overlapping; Be positioned on described T-shaped metal structure, be covered in described some unit and with the insulating layer of thin-film of some through holes; Described through hole is positioned on the drain electrode of described each unit; Be filled in described through hole to contact and the conductive film solidified with described grid; Described conductive film to be covered on described insulating layer of thin-film and separated from one another along each described unit.
Preferably, metal is filled with in the groove that described coining pattern is formed.
Preferably, described unit by matrix distribution and in this matrix often row adjacent cells share a grid, often row adjacent cells share a source electrode.
Preferably, described source electrode composition these two adjacent cells grid, drain electrode between and extend outside described grid.
Preferably, described first layer pattern correspondence be covered in the source electrode of a unit and drain electrode and between the subregion at channel region place.
Preferably, described CNT is covered in described each cell source and the subregion of drain electrode and the channel region between source electrode and drain electrode.
Preferably, the projection on described flexible base board of described first layer pattern and described CNT is completely overlapping.
Preferably, the drain electrode of described each unit there is one from the described through hole of described second insulating layer of thin-film.
Preferably, the both arms of described T-shaped metal structure contact with the grid of two unit adjacent in every column unit.
As mentioned above, flexible TFT backplate and preparation method thereof based on CNT transfer and self-aligned technology of the present utility model, there is following beneficial effect: stamping technique can utilize high-fineness template to prepare micron order and even nano level micro-structural on the flexible parent metals such as UV glue (ultraviolet stamping) and hot-setting adhesive (hot padding), technology or meticulous electroplating technology is scraped in conjunction with conductive ink, can in micro-structural the hyperfine conducting wire of filled conductive preparation of metals, and the introducing of volume to volume stamping technique makes the extensive mass low-cost production of product become possibility, spray printing, silk-screen are full-fledged as conventional fabrication processes, and operation is perfect, and equipment perfects, be introduced into flexible TFT preparation technology and there is no unnecessary R&D costs, and complex and expensive traditional TFT preparation technology consuming time can be substituted, enhance productivity, reduce production cost, the electrology characteristic that CNT itself is excellent and mechanical characteristic.Become semiconductor by its conductive characteristic of structure structural change changing CNT (CNT) itself, mobility is higher than non-crystalline silicon and polysilicon.The hardness of CNT own is high, and toughness is strong, can carry out PROCESS FOR TREATMENT, be not limited to the conventional substrate such as glass on all kinds of base material.In this patent, carbon nanotube thin film layer is prepared by spray printing, does not need high-temperature work environment, and flexible parent metal heat shrinkable can not be caused to bend.The role of insulating barrier and etching mask played the part of by justifying spray printing CNT recycling polymeric material, and finally prepd CNT structure is more accurate.
Accompanying drawing explanation
Fig. 1 is shown as the floor map of the flexible base board with micro-structural coining pattern of the present utility model.
Fig. 2 to be shown as in the utility model spray printing on coining pattern the flexible base board floor map of carbon nanotube layer.
Fig. 3 is shown as in the utility model the floor map making some first layer pattern on the carbon nanotubes.
Fig. 4 is shown as the figure after being etched by exposed CNT in the utility model.
Grid that is that prepare between the grid that Fig. 5 is shown as adjacent two unit in the utility model and these two unit and between the second layer pattern of contacting with each other of source electrode.
Fig. 6 is shown as in the utility model the floor map preparing T-shaped grid wire jumper on flexible substrates.
Fig. 7 is shown as the planar structure schematic diagram of the insulating layer of thin-film making band through hole in the utility model on grid wire jumper.
Fig. 8 is shown as the planar structure schematic diagram making conductive film in the utility model on insulating layer of thin-film.
Fig. 9 is shown as in the utility model and cuts along unit the planar structure schematic diagram that described conductive film forms some pixel electrode unit.
Element numbers explanation
10 flexible base boards
101 grids
102 source electrodes
103 drain electrodes
11 CNTs
12 first layer pattern
13 second layer pattern
14 grid wire jumpers
15 insulating layer of thin-film
16 conductive films
Detailed description of the invention
Below by way of specific instantiation, embodiment of the present utility model is described, those skilled in the art the content disclosed by this description can understand other advantages of the present utility model and effect easily.The utility model can also be implemented or be applied by detailed description of the invention different in addition, and the every details in this description also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present utility model.
Refer to Fig. 1 to Fig. 9.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present utility model in a schematic way, then only the assembly relevant with the utility model is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Flexible TFT backplate preparation method based on CNT transfer and self-aligned technology of the present utility model comprises the following steps:
Step one: as shown in Figure 1, the floor map of the flexible base board that what Fig. 1 represented is with micro-structural coining pattern.There is provided the flexible base board 10 that is provided with micro-structural coining pattern, the formation method of the coining pattern of described micro-structural is preferably: on described flexible base board, apply UV glue, and recycling tailored template and curing apparatus impress out microstructure graph on described UV glue.The yardstick of the described microstructure graph in the utility model is micro-nano rank.Described micro-structural coining pattern comprises the some unit be made up of grid 101, source electrode 102 and drain electrode 103; Described unit by matrix distribution and in this matrix often row adjacent cells share a grid, often row adjacent cells share a source electrode, this source electrode composition these two adjacent cells grid between and extend outside described matrix; As shown in Figure 1, what Fig. 1 provided is the distribution that three row two arrange; Wherein grid 101 is by spaced apart for drain electrode 103, and source electrode 102 is across between adjacent rows drain electrode 103 and grid 101, the wherein drain electrode 103 of adjacent rows and grid 101 common-source 102 each other; A wherein adjacent grid, a source electrode and a drain electrode formation described unit; That is common-source each other in the unit formed; Because the source electrode needs finally prepared are outside exposed, therefore, described source electrode extends outside grid at Fig. 1 left and right directions.In the groove that the coining pattern made is formed, fill metal in this step, form conducting wire, the method for wherein filling metal is preferably electroplated, scrape or the method for spray printing; The metal of filling in the present embodiment is copper or silver, and the metal that the utility model is filled also comprises other metals outside copper removal or silver.
Step 2: as shown in Figure 2, what Fig. 2 represented is the flexible base board floor map being coated with carbon nanotube layer on coining pattern, one deck CNT 11 is covered in the scope justifying at the source electrode of described some unit, grid and drain electrode place, that is, described CNT 11 covers on the source electrode of coining pattern, grid and drain electrode, and this CNT is justifying to be covered and is formed, and is an overall structure layer.Preferably, the method that in the utility model, justifying covers described CNT comprise in spray printing, transfer or sputtering any one.CNT (Carbon Nanotube, CNT) is a kind of carbon molecule of tubulose, different according to the number of plies of pipe, be divided into single wall and multi-walled carbon nano-tubes, the radial direction of pipe is very thin, only has nanoscale, is then tens of to hundreds of micron in axis.Due to the structure that it is special, CNT has some special electrical properties, by changing manufacturing process adjustment CNT internal structure, thus can show single insulating properties, semiconductor or metallicity in particular directions, electrical conductivity is controlled and reach as high as 10,000 times of copper.The CNT mechaanical property of materials is excellent, and quite, waterproof, resistance toly knocks scraping for hardness and diamond; Toughness is strong, can restore to the original state immediately after stretch bending.Preferably, CNT 11 described in the utility model presents characteristic of semiconductor.
Step 3: as shown in Figure 3, what Fig. 3 represented is the floor map making some first layer pattern 12 on CNT 11.Some first layer pattern 12 are made on described CNT 11; The source electrode of described first projection of layer pattern 12 on described flexible base board and each unit and drain electrode and between the region at channel region place have overlapping, some first layer pattern 12 described in Fig. 3 by the source electrode overlapping with its projection and drain electrode and between channel region block.And in fact, in the below of described first layer pattern 12, for one of them unit, the source electrode and the drain electrode that form this unit have overlapping region with the first layer pattern 12 be produced on above this unit, and drain electrode is not exclusively overlapping with described first layer pattern 12, and the method for described first layer pattern 12 utilizes Printing techniques make polymer insulation layer and obtain on described CNT.Can figure after to be the utility model step 4 etch exposed CNT see Fig. 4, Fig. 4, as can be known from Fig. 4, the source electrode in described unit and drain electrode and between channel region have overlapping with the first layer pattern 12.Preferably, the method making described first layer pattern 12 in step 3 utilizes Printing techniques on described CNT, make polymer insulation layer and obtain.
Step 4: etching not by the CNT 11 that described first layer pattern 12 covers, as shown in Figure 4, Fig. 4 display be by exposed CNT etch after figure.Owing to forming some first layer pattern 12 on described CNT 11, there is no the region of described first layer pattern, described CNT 11 is exposed, exposed CNT etches by this step, the structure formed after etching as shown in Figure 4, in order to show obviously, Fig. 4 presents a circle CNT 11 and also has one deck CNT 11 to be shown under described first layer pattern 12 at the edge of described first layer pattern 12.Preferably, the method etching described CNT in the present embodiment is solution corrosion method, and the method etching described CNT in the utility model also comprises dry etching.
Step 5: then on the basis of step 4, as shown in Figure 5, grid that is that prepare between the grid of what the second layer pattern 13, Fig. 5 that preparation and the grid of these two unit contact with each other between the described grid often arranging adjacent two unit showed is adjacent two unit and these two unit and between the second layer pattern 13 of contacting with each other of source electrode.Preferably, the material of described second layer pattern 13 is polymer insulation layer to the utility model.That is, described second layer pattern 13 covers the common-source of these two unit and contacts with each other with the grid of these two unit respectively.That is described shared source electrode is isolated by described second layer pattern, be short-circuited with source electrode when avoiding in subsequent step, the grid of these two unit being connected.
Step 6: as shown in Figure 6, what Fig. 6 showed is the floor map preparing T-shaped grid wire jumper on flexible substrates.The basis of step 5 is prepared horizontal T-shaped metal structure as grid wire jumper 14; It is horizontal that described horizontal T-shaped metal structure refers to this grid wire jumper 14 in Fig. 6 on described flexible base board, that is the both arms of T-shaped metal structure are positioned over side, and its vertical portion (main part) is positioned over the opposite side of both arms.As shown in Figure 6, the both arms of described T-shaped metal structure to be arranged on described second layer pattern 13 and to contact with the grid 101 often arranging adjacent two unit; The source electrode of the projection on this flexible base board of the main part (vertical portion) of described T-shaped metal structure and each unit and drain overlapping and its width h does not exceed the width H of described first layer pattern 12, that is be placed in the main part (vertical portion) of the described T-shaped metal structure on each unit and have overlapping with the source electrode of this unit and drain electrode.Distance in this unit between source electrode and drain electrode is the width of raceway groove, and the main part of described T-shaped metal structure is across on described raceway groove.Preferably, the technique making described grid wire jumper in this step is Printing techniques.
Step 7: then step 6, as shown in Figure 7, what Fig. 7 represented is the planar structure schematic diagram making the insulating layer of thin-film being with through hole on grid wire jumper.Described grid wire jumper 14 makes one deck and covers described some unit and with the insulating layer of thin-film 15 of some through holes, described some through holes are positioned on the drain electrode of described each unit.Preferably, one is had from the described through hole of described insulating layer of thin-film on the drain electrode of each unit.The described drain electrode of each through-hole alignment unit that is on described insulating layer of thin-film 15.And whole insulating layer of thin-film is as a whole covers on described some unit.
Step 8: as shown in Figure 8, what Fig. 8 represented is the planar structure schematic diagram making conductive film 16 on described insulating layer of thin-film 15.With the insulating layer of thin-film 15 of through hole utilizing conductive ink make layer of conductive film 16 in described step 7; Conductive ink is packed into described through hole and contacts with described grid and solidify; Only demonstrate conductive film in Fig. 8 to cover on described insulating layer of thin-film, and the structure below described conductive film is not all shown.Preferably, the method making described conductive film is screen printing technique.Due to the existence of apertures some in insulating layer of thin-film, during silk-screen, conductive ink fills aperture and the exposed gate contact in bottom, the exposed grid in bottom and turned on outside after the solidification of this conductive ink.
Step 9: as shown in Figure 9, what Fig. 9 showed is cut along described unit the planar structure schematic diagram that described conductive film forms some pixel electrode unit.Whole conductive film in Fig. 8 is formed some pixel electrode unit by after described unit cutting.Fig. 9 only demonstrates the some pixel electrode unit covered by described conductive film, and the structure below the conductive film of this some pixel electrode unit is not shown.Preferably, in this step, the method for cutting described conductive film is radium-shine cutting technique.
The utility model also provides a kind of based on CNT transfer and the flexible TFT backplate of self-aligned technology, and described flexible TFT backplate at least comprises: the flexible base board 10 being provided with micro-structural coining pattern; Described micro-structural coining pattern comprises the some unit be made up of grid 101, source electrode 102 and drain electrode 103; Preferably, described unit by matrix distribution and in this matrix often row adjacent cells share a grid, often row adjacent cells share a source electrode.That is, all spaced grid often in row finally can interconnect, and the source electrode under each drain electrode often in row forms the common-source of this row transistor.Further preferably, described source electrode composition these two adjacent cells grid, drain electrode between and extend outside described grid.Preferably, metal is filled with in the groove that described coining pattern is formed.Preferably, described metal comprises copper or silver; Be covered in the CNT 11 of scope at the source electrode of described each unit, grid and drain electrode place; Preferably, described CNT 11 is covered in described each cell source and the subregion of drain electrode and the channel region between source electrode and drain electrode.Preferably, described first layer pattern 12 correspondence is covered in the source electrode of each unit and the subregion of drain electrode and the channel region between source electrode and drain electrode.Preferably, the projection on described flexible base board of described first layer pattern and described CNT is completely overlapping.Between the grid of described adjacent two unit and and the grid of these two unit and between the second layer pattern 13 of contacting with each other of source electrode; Both arms are positioned at the T-shaped metal structure contacted on described second layer pattern and with the grid of adjacent two unit, and preferably, the both arms of described T-shaped metal structure contact with the grid of two unit adjacent in every column unit.Source electrode and the drain electrode of the projection on this flexible base board of the main part of this T-shaped metal structure and each unit have overlapping; Be positioned on described T-shaped metal structure, be covered in described some unit and with the insulating layer of thin-film 15 of some through holes; Described through hole is positioned on the drain electrode of described each unit; Preferably, the drain electrode of described each unit there is one from the described through hole of described insulating layer of thin-film.Be filled in described through hole to contact with described grid and the conductive film 16 solidified; Described conductive film to be covered on described insulating layer of thin-film and separated from one another along each described unit.
The utility model utilizes micro-nano imprint technology, prepares source electrode, drain electrode, grid by scraping curing conductive ink; The connected applications of impression (Imprinting), spray printing (Ink-jetting), silk-screen (Screen Printing), has walked around high-accuracy low serious forgiveness technique necessary in traditional handicraft; The application of CNT (CNT) material, due to itself special adjustable conductive characteristic and lower manufacture difficulty, can replace the material in characteristic of semiconductor such as non-crystalline silicon and polysilicon in the preparation of specific products; The dual role of insulating barrier and etching mask played the part of by justifying spray printing CNT recycling polymeric material.
In sum, the utility model impression (Imprinting) technology can utilize high-fineness template to prepare micron order and even nano level micro-structural on the flexible parent metals such as UV glue (ultraviolet stamping) and hot-setting adhesive (hot padding), technology or meticulous electroplating technology is scraped in conjunction with conductive ink, can in micro-structural the hyperfine conducting wire of filled conductive preparation of metals, and volume to volume impression (R2R Imprinting) technology introducing make the extensive mass low-cost production of product become possibility; Spray printing (Ink-jetting), silk-screen (Screen Printing) are full-fledged as conventional fabrication processes, operation is perfect, equipment perfects, be introduced into flexible TFT preparation technology and there is no unnecessary R&D costs, and complex and expensive traditional TFT preparation technology consuming time can be substituted, enhance productivity, reduce production cost; The electrology characteristic that CNT itself is excellent and mechanical characteristic.Become semiconductor by its conductive characteristic of structure structural change changing CNT itself, mobility is higher than non-crystalline silicon and polysilicon.The hardness of CNT own is high, and toughness is strong, can carry out PROCESS FOR TREATMENT, be not limited to the conventional substrate such as glass on all kinds of base material.In this patent, carbon nanotube thin film layer is prepared by spray printing, does not need high-temperature work environment, and flexible parent metal heat shrinkable can not be caused to bend.The role of insulating barrier and etching mask played the part of by justifying spray printing CNT recycling polymeric material, and finally prepd CNT structure is more accurate.So the utility model effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all without prejudice under spirit of the present utility model and category, can modify above-described embodiment or changes.Therefore, such as have in art and usually know that the knowledgeable modifies or changes not departing from all equivalences completed under the spirit and technological thought that the utility model discloses, must be contained by claim of the present utility model.
Claims (9)
1., based on CNT transfer and the flexible TFT backplate of self-aligned technology, it is characterized in that: described flexible TFT backplate at least comprises:
Be provided with the flexible base board of micro-structural coining pattern; Described micro-structural coining pattern comprises the some unit be made up of grid, source electrode and drain electrode;
Be covered in the source electrode of described each unit and drain electrode and between the CNT of channel region; Be positioned at the first layer pattern on described CNT; Described first layer pattern is covered in the source electrode of described unit and the region at drain electrode place; Between the grid of described adjacent two unit and and the grid of these two unit and between the second layer pattern of contacting with each other of source electrode;
Both arms are positioned at the T-shaped metal structure contacted on described second layer pattern and with the grid of adjacent two unit, and source electrode and the drain electrode of the projection on this flexible base board of the main part of this T-shaped metal structure and each unit have overlapping;
Be positioned on described T-shaped metal structure, be covered in described some unit and with the insulating layer of thin-film of some through holes; Described through hole is positioned on the drain electrode of described each unit; Be filled in described through hole to contact and the conductive film solidified with described grid; Described conductive film to be covered on described insulating layer of thin-film and separated from one another along each described unit.
2. according to claim 1 based on CNT transfer and the flexible TFT backplate of self-aligned technology, it is characterized in that: in the groove that described coining pattern is formed, be filled with metal.
3. according to claim 1 based on CNT transfer and the flexible TFT backplate of self-aligned technology, it is characterized in that: described unit is the often shared grid of row adjacent cells, the often shared source electrode of row adjacent cells by matrix distribution and in this matrix.
4. according to claim 3 based on CNT transfer and the flexible TFT backplate of self-aligned technology, it is characterized in that: described source electrode these two adjacent cells of composition grid, drain between and extend outside described grid.
5. according to claim 1 based on CNT transfer and the flexible TFT backplate of self-aligned technology, it is characterized in that: described first layer pattern is corresponding be covered in the source electrode of each unit and drain electrode and between the subregion at channel region place.
6. according to claim 1 based on CNT transfer and the flexible TFT backplate of self-aligned technology, it is characterized in that: described CNT is covered in described each cell source and the subregion of drain electrode and the channel region between source electrode and drain electrode.
7. according to claim 1 based on CNT transfer and the flexible TFT backplate of self-aligned technology, it is characterized in that: the projection on described flexible base board of described first layer pattern and described CNT is completely overlapping.
8. according to claim 1 based on CNT transfer and the flexible TFT backplate of self-aligned technology, it is characterized in that: the drain electrode of described each unit has one from the described through hole of described insulating layer of thin-film.
9. according to claim 3 based on CNT transfer and the flexible TFT backplate of self-aligned technology, it is characterized in that: the both arms of described T-shaped metal structure contact with the grid of two unit adjacent in every column unit.
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| CN201420748583.1U CN204303793U (en) | 2014-12-03 | 2014-12-03 | Based on CNT transfer and the flexible TFT backboard of self-aligned technology |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505370A (en) * | 2014-12-03 | 2015-04-08 | 上海蓝沛新材料科技股份有限公司 | Flexible TFT backboard based on carbon nanotube transfer and self-alignment technology and preparation method thereof |
| CN107946189A (en) * | 2017-11-22 | 2018-04-20 | 深圳市华星光电半导体显示技术有限公司 | A kind of thin film transistor (TFT) and preparation method thereof |
-
2014
- 2014-12-03 CN CN201420748583.1U patent/CN204303793U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505370A (en) * | 2014-12-03 | 2015-04-08 | 上海蓝沛新材料科技股份有限公司 | Flexible TFT backboard based on carbon nanotube transfer and self-alignment technology and preparation method thereof |
| CN104505370B (en) * | 2014-12-03 | 2017-12-05 | 上海量子绘景电子股份有限公司 | Flexible TFT backplate based on CNT transfer and self-aligned technology and preparation method thereof |
| CN107946189A (en) * | 2017-11-22 | 2018-04-20 | 深圳市华星光电半导体显示技术有限公司 | A kind of thin film transistor (TFT) and preparation method thereof |
| CN107946189B (en) * | 2017-11-22 | 2020-07-31 | 深圳市华星光电半导体显示技术有限公司 | Thin film transistor and preparation method thereof |
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