CN204271948U - A kind of self-powered P-SSHI circuit - Google Patents
A kind of self-powered P-SSHI circuit Download PDFInfo
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- CN204271948U CN204271948U CN201420551927.XU CN201420551927U CN204271948U CN 204271948 U CN204271948 U CN 204271948U CN 201420551927 U CN201420551927 U CN 201420551927U CN 204271948 U CN204271948 U CN 204271948U
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Abstract
The utility model relates to a kind of self-powered P-SSHI circuit.It is characterized in that described P-SSHI circuit comprises detector I, detector II, metal-oxide-semiconductor M1, metal-oxide-semiconductor M4, diode D3, diode D5, switching device I, switching device II, whole bridge circuit.This P-SSHI circuit is not needing the energy of collection piezoelectric element that can be more under power conditions, compared with existing piezoelectric energy collecting circuit, this circuit is not only adapted at high level of vibration and collects comparatively multi-energy, also be adapted at the effective harvest energy of low level of vibration, effectively raise efficiency of energy collection.
Description
Technical field
The utility model belongs to energy, power technique fields, relates to a kind of energy collection circuit.This utility model can use piezoelectric element harvest energy in vibration environment, and collected energy circuit can be provided convenience for people's daily life.
Background technology
In recent years, each corner in life has been permeated in energy-saving and emission-reduction, wireless technology.Give the credit to the progress of radio sensing network and Low-power Technology, the investigation and application of energy harvester is increasingly extensive.Such as monitoring structural health conditions, these application grown with each passing day such as global positioning system just have very large stimulation to the demand of the energy.At present, there is the energy of various ways in environment, its energy density is as shown in table 1.
Energy density in table 1 environment
The major way being collected as electric energy in vibrational energy has three types: electromagnetism, electrostatic, piezoelectricity.Substantially in transforming at above-mentioned three kinds, piezoelectricity transform more and more pay close attention to by many researchers.
Collect in interface circuit at piezoelectricity, also have three kinds of forms.
1. standard interface, makes direct voltage leveling with whole bridge circuit and electric capacity.This whole bridge circuit is made up of 4 diodes.
2. synchronous charge-extraction circuit.Should be made up of whole bridge circuit and DC-DC converter, it can extract electric energy fast, and keeps synchronous with piezoelectric vibration.
3. synchro switch inductive circuit (SSHI), this electric routing switch device and piezoelectric element compose in parallel.Switching device is made up of switch and inductance.At the maximum of transducer, switch closes, and the electric capacity of piezoelectric element and inductance form oscillator, and switch remains closed until the voltage reversal of piezoelectric element.This nonlinear technology makes energy collection circuit significantly promote and be applicable to resonance structure.
Because synchro switch inductive circuit SSHI circuit can be collected more energy and be applicable to resonance structure in whole band limits, corresponding shortcoming is that power output only can reach maximum when optimal load.
Utility model content
The utility model provides a kind of self-powered synchro switch inductance (P-SSHI) circuit in parallel.
1. technical problem is: problem one needs extra Power supply; Problem two is that efficiency of energy collection is poor.
2. technical scheme is: for solving the problem, and propose a kind of self-powered synchro switch inductance (P-SSHI) circuit in parallel, it comprises detector I, detector II, metal-oxide-semiconductor M1, metal-oxide-semiconductor M4, diode D3, diode D5, switching device I, switching device II, whole bridge circuit.
In Fig. 1, described piezoelectric element material is generally lead zirconate titanate (PZT) or Kynoar (PVDF), and structure is generally rectangle, triangle, circular form structure; Piezoelectric element is when vibration environment is subject to encouraging, and piezoelectric element internal charge produces alternating voltage with the displacement synchronous change of piezoelectric element; For convenience of setting forth, suppose that the displacement vibrated is sinusoidal variations, piezoelectric element internal charge can be sinusoidal variations, and consider that the waveform under actual vibration environment can be decomposed into the superposition of multiple simple sinusoidal, the experiment condition therefore encouraged can be equivalent to a sinusoidal current source i
p; Piezoelectric element is usually expressed as capacitive in most of frequency range, and therefore piezoelectric element can be equivalent to a sinusoidal current source i when vibrating
pwith an electric capacity C
pparallel connection, as shown in Figure 2.
Described P-SSHI circuit theory is as follows, and V12 represents Fig. 4 interior joint 1 and node 2 voltage difference; Described P-SSHI is symmetrical structure, and the positive half period of described circuit is with reference to carrying out principle analysis:
I
pbefore entering positive half period in a flash before, the voltage of node 1 is-V
d, the voltage of node 2 is V
l+ V
d, the electric current of whole bridge circuit flows to node 1 from node 2; i
pwhen entering positive half period from negative half-cycle, due to the voltage difference of node 1 and node 2, M4 conducting, M1 not conducting, M4 makes the conducting of M2 pipe.
Effect of the present utility model and benefit are:
1. P-SSHI circuit of the present utility model is self-powered, has the advantages such as energy-saving and environmental protection;
2. P-SSHI circuit of the present utility model not only can be adapted at high level of vibration and collect more energy, is also adapted at the effective harvest energy of low level of vibration.
Accompanying drawing explanation
Fig. 1 is self-powered piezoelectricity P-SSHI circuit diagram;
Fig. 2 is self-powered piezoelectricity P-SSHI equivalent circuit diagram;
Fig. 3 is self-powered piezoelectricity P-SSHI equivalent electric circuit waveform, and wherein (a) is sinusoidal current, and (b) is the voltage at piezoelectric element two ends, and (c) is the electric current of inductance L;
Fig. 4 is self-powered piezoelectricity P-SSHI embodiment figure.
Embodiment
Self-powered P-SSHI circuit of the present utility model, its preferably embodiment as shown in Figure 4, nodes all in accompanying drawing is consistent.
Embodiment:
1. according to shown in Fig. 4, piezoelectric element is sticked or imbeds body structure surface, and the material of piezoelectric element can be PZT piezoelectric ceramic, input 1,2 connect piezoelectric element two ends, and piezoelectric element two ends do not have polarity to distinguish, output 3,4 connect output loading two ends, output loading two termination output resistance R
outor it is unloaded;
2., when piezoelectric element is subject to ambient vibration excitation, it autonomous produce power can be stored in external capacitor C
rectin.
Claims (3)
1., based on a self-powered P-SSHI circuit, it is characterized in that described P-SSHI circuit comprises detector I, detector II, metal-oxide-semiconductor M1, metal-oxide-semiconductor M4, diode D3, diode D5, switching device I, switching device II, whole bridge circuit;
Described detector I comprises resistance R1, diode D1, electric capacity C1; Described detector II comprises resistance R2, diode D2, electric capacity C2; Described switching device I comprises diode D4, metal-oxide-semiconductor M3; Described switching device II comprises diode D6, metal-oxide-semiconductor M2; Described whole bridge circuit is by diode D7, and diode D8, diode D9, diode D10 are formed;
Described piezoelectric element one end respectively with resistance R1 one end, metal-oxide-semiconductor M1 gate terminal, diode D4 positive terminal, diode D6 negative pole end, the gate terminal of metal-oxide-semiconductor M4, one end of resistance R2, the negative pole of diode D7, diode D8 positive pole is connected, the resistance R1 other end is connected with the positive pole of diode D1, the negative pole of diode D1 respectively with the source terminal of metal-oxide-semiconductor M1, one end of electric capacity C1 is connected, the electric capacity C1 other end respectively with the other end of piezoelectric element, inductance L one end, electric capacity C2 one end, diode D9 negative pole end, diode D10 positive terminal; The drain electrode end of described metal-oxide-semiconductor M1 is connected with the positive pole of diode D3, described diode D3 negative pole end is connected with the gate terminal of metal-oxide-semiconductor M3, the drain electrode end of described metal-oxide-semiconductor M3 is connected with the negative pole end of diode D4, the other end of described inductance respectively with the source electrode of metal-oxide-semiconductor M3, the source electrode of metal-oxide-semiconductor M2 is connected; The grid of described metal-oxide-semiconductor M2 is connected with diode D5 positive pole, and the drain electrode of described metal-oxide-semiconductor is connected with diode D6 positive pole; Described diode D5 negative pole is connected with metal-oxide-semiconductor M4 drain electrode end, described metal-oxide-semiconductor M4 source terminal respectively with electric capacity C2 one end, the positive pole of diode D2 is connected; The negative pole of described diode D2 is connected with resistance R2 one end respectively; Described diode D7 positive pole, diode D9 positive pole is all connected to the ground, described diode D8 negative pole, diode D10 negative pole is connected with output loading one end, the output loading other end is connected to the ground, and output loading can be electric capacity Crect, and output loading also can be that electric capacity Crect is in parallel with resistance Rload.
2. P-SSHI circuit according to claim 1, is characterized in that, in whole bridge circuit, little, the reverse diode little by electric current of forward conduction voltage drop selected by diode.
3. P-SSHI circuit according to claim 1, is characterized in that, metal-oxide-semiconductor selects super low-power consumption model.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420551927.XU CN204271948U (en) | 2014-09-24 | 2014-09-24 | A kind of self-powered P-SSHI circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420551927.XU CN204271948U (en) | 2014-09-24 | 2014-09-24 | A kind of self-powered P-SSHI circuit |
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| Publication Number | Publication Date |
|---|---|
| CN204271948U true CN204271948U (en) | 2015-04-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420551927.XU Expired - Fee Related CN204271948U (en) | 2014-09-24 | 2014-09-24 | A kind of self-powered P-SSHI circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104270033A (en) * | 2014-09-24 | 2015-01-07 | 北京林业大学 | Self-powered P-SSHI circuit |
| CN105915112A (en) * | 2016-05-16 | 2016-08-31 | 南京航空航天大学 | Self-powered energy recovery interface circuit based on piezoelectric effect, and control method |
| CN107508490A (en) * | 2017-07-25 | 2017-12-22 | 中山大学 | A kind of piezoelectric vibration energy extracts circuit |
-
2014
- 2014-09-24 CN CN201420551927.XU patent/CN204271948U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104270033A (en) * | 2014-09-24 | 2015-01-07 | 北京林业大学 | Self-powered P-SSHI circuit |
| CN105915112A (en) * | 2016-05-16 | 2016-08-31 | 南京航空航天大学 | Self-powered energy recovery interface circuit based on piezoelectric effect, and control method |
| CN105915112B (en) * | 2016-05-16 | 2018-04-27 | 南京航空航天大学 | A kind of self energizing energy regenerating interface circuit and control method based on piezoelectric effect |
| CN107508490A (en) * | 2017-07-25 | 2017-12-22 | 中山大学 | A kind of piezoelectric vibration energy extracts circuit |
| CN107508490B (en) * | 2017-07-25 | 2019-05-07 | 中山大学 | A kind of piezoelectric vibration energy extraction circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150415 Termination date: 20150924 |
|
| EXPY | Termination of patent right or utility model |