CN203933364U - A kind of high-power drive circuit in parallel of multiple IGBT modules - Google Patents
A kind of high-power drive circuit in parallel of multiple IGBT modules Download PDFInfo
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- CN203933364U CN203933364U CN201420278500.7U CN201420278500U CN203933364U CN 203933364 U CN203933364 U CN 203933364U CN 201420278500 U CN201420278500 U CN 201420278500U CN 203933364 U CN203933364 U CN 203933364U
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Abstract
The utility model discloses a kind of multiple IGBT module high-power drive circuit in parallel, comprise short circuit and the temperature detecting unit of trigger element, IGBT modular unit and the IGBT modular unit of push-pull circuit power supply, push-pull circuit unit, pulse isolation transformer unit, IGBT module; Described push-pull circuit unit is electrically connected with IGBT modular unit by the trigger element of IGBT module, the short circuit of pulse isolation transformer unit by IGBT modular unit is electrically connected with IGBT modular unit with temperature detecting unit, and push-pull circuit power supply provides electric power for push-pull circuit unit.Beneficial effect is, adopt that high and low pressure is isolated safely, the multiple IGBT modules of power supply parallel drive of a push-pull circuit and there is short circuit and technical scheme that temperature real-time detection function combines, effectively prevent line-hit, realize the powerful driver output of multiple IGBT modules of low cost, high reliability.
Description
Technical field
The utility model relates to a kind of electric semiconductor applied technical field; Particularly relate to a kind of high-power drive circuit in parallel of multiple IGBT modules.
Background technology
IGBT module (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, the compound full-control type voltage driven type power semiconductor being made up of BJT (Bipolar Junction Transistor-bipolar transistor) and MOS (insulating gate type field effect tube), has MOSFET(Metal-Oxide-Semiconductor Field-Effect Transi field effect transistor concurrently) high input impedance and the huge transistor of GTR(Giant Transistor) the advantage of low conduction voltage drop two aspects.
Along with the continuous expansion of electric power, the continuous develop rapidly of electronic technology and application, electric semiconductor IGBT module device is constantly being brought into play the advantage of himself in major application fields such as household electrical appliance, communications and transportation, electric power, regenerative resource, uninterrupted power supply, power conversions, its development prospect is fine.
Be limited to semiconductor process techniques condition, the voltage and current of the each release IGBT of manufacturer module device is also very limited, can not meet the demand of industry far away, in order to export larger electric current, common solution is to use in parallel multiple IGBT modules, due to technologic inconsistency, cause each IGBT module to there is inconsistency, as, service time, turn-off time, saturation voltage drop, gate pole threshold voltage and inside chip stray inductance etc., this has just determined that IGBT module in parallel can not be completely simultaneously open-minded, turn-off simultaneously, be difficult to ensure the current balance of IGBT module, if the driving signal of IGBT module is inconsistent, just more can increase the weight of this situation, current flowing will burn because heating is serious compared with large IGBT module.And in the time that the quantity of IGBT increases, occur that the possibility of various failure conditions further increases, just seem particularly important for the protection of IGBT module.
Fig. 1 is traditional multiple IGBT parallel driver circuit; As shown in Figure 1, traditional IGBT module drive circuit adopts multiple control signals, each control signal drives IGBT module again after transformer isolation separately, push-pull circuit, gate electrode resistance again, control signal can produce larger inconsistent after these links, cause the equal flow problem of IGBT module more serious, the parallel connection of IGBT module is just difficult to realize.
Summary of the invention
Technical problem to be solved in the utility model is to provide a kind of multiple IGBT module high-power drive circuit in parallel.
The technical scheme that the utility model adopts is, a kind of multiple IGBT modules high-power drive circuit in parallel, comprise short circuit and the temperature detecting unit 60 of trigger element 40, IGBT modular unit 50 and the IGBT modular unit of push-pull circuit power supply 10, push-pull circuit unit 20, pulse isolation transformer unit 30, IGBT module; Described push-pull circuit unit 20 is electrically connected with IGBT modular unit 50 by the trigger element 40 of IGBT module, pulse isolation transformer unit 30 is electrically connected with IGBT modular unit 50 with temperature detecting unit 60 by the short circuit of IGBT modular unit, and push-pull circuit power supply 10 provides electric power for push-pull circuit unit 20.Described push-pull circuit unit 20 is made up of several identical push-pull circuits, be output as ± 15V of push-pull circuit power supply 10 voltage, the output of push-pull circuit power supply 10 push-pull circuit identical with several electrical connection in parallel respectively.
The trigger element 40 of described IGBT module, comprises, the gate electrode resistance that several are identical, and the output of described each push-pull circuit is electrically connected with IGBT modular unit 50 respectively by each gate electrode resistance respectively
Described pulse isolation transformer unit 30, comprise, isolating transformer T1 and burst pulse testing circuit, the control signal of IGBT modular unit 50 is electrically connected with the former limit of isolating transformer T1 by burst pulse testing circuit, one end of the secondary of isolating transformer T1 is the input electrical connection in parallel of the push-pull circuit identical with several respectively, and the other end of the secondary of isolating transformer T1 is electrically connected with IGBT modular unit 50 with temperature detecting unit 60 by the short circuit of IGBT modular unit.When the control signal of IGBT modular unit 50 is optical signal communications, increase a photoelectric switching circuit at the front end of burst pulse testing circuit.
The beneficial effects of the utility model are, adopt that high and low pressure is isolated safely, the multiple IGBT modules of power supply parallel drive of a push-pull circuit and there is short circuit and technical scheme that temperature real-time detection function combines, effectively prevent line-hit, realize the powerful driver output of multiple IGBT modules of low cost, high reliability.
Brief description of the drawings
Fig. 1 is traditional multiple IGBT module parallel driver circuit;
Fig. 2 is the composition schematic diagram of the multiple IGBT modules of the utility model high-power drive circuit in parallel;
Fig. 3 is the multiple IGBT modules of the utility model high-power drive circuits in parallel.
In figure:
10, push-pull circuit power supply 20, push-pull circuit unit
30, the trigger element of pulse isolation transformer unit 40, IGBT module
50, short circuit and the temperature detecting unit of IGBT modular unit 60, IGBT modular unit.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail:
Fig. 2 is the composition schematic diagram of the multiple IGBT modules of the utility model high-power drive circuit in parallel; Fig. 3 is the multiple IGBT modules of the utility model high-power drive circuits in parallel; As shown in Figure 2 and Figure 3, the multiple IGBT modules of the utility model high-power drive circuit in parallel, comprise short circuit and the temperature detecting unit 60 of trigger element 40, IGBT modular unit 50 and the IGBT modular unit of push-pull circuit power supply 10, push-pull circuit unit 20, pulse isolation transformer unit 30, IGBT module; Described push-pull circuit unit 20 is electrically connected with IGBT modular unit 50 by the trigger element 40 of IGBT module, pulse isolation transformer unit 30 is electrically connected with IGBT modular unit 50 with temperature detecting unit 60 by the short circuit of IGBT modular unit, and push-pull circuit power supply 10 provides electric power for push-pull circuit unit 20.
Push-pull circuit unit 20 is made up of several identical push-pull circuits, be output as ± 15V of push-pull circuit power supply 10 voltage, the output of push-pull circuit power supply 10 push-pull circuit identical with several electrical connection in parallel respectively.Transformer T2 isolation for described power acquisition, ensures that low-pressure side and the high-pressure side of drive circuit isolates safely, secondary output ± 15V voltage, and by electric source filter circuit, for ensureing normally turning on and off of safety of IGBT module.
The trigger element 40 of IGBT module, comprises, the gate electrode resistance that several are identical, and the output of described each push-pull circuit is electrically connected with IGBT modular unit 50 respectively by each gate electrode resistance respectively.
Pulse isolation transformer unit 30, comprise, isolating transformer T1 and burst pulse testing circuit, the control signal of IGBT modular unit 50 is electrically connected with the former limit of isolating transformer T1 by burst pulse testing circuit, one end of the secondary of isolating transformer T1 is the input electrical connection in parallel of the push-pull circuit identical with several respectively, and the other end of the secondary of isolating transformer T1 is electrically connected with IGBT modular unit 50 with temperature detecting unit 60 by the short circuit of IGBT modular unit.The high-frequency signal that the control signal of IGBT modular unit 50 is effectively disturbed on filtering circuit and space by burst pulse testing circuit, effectively ensures the transmission of control signal; Described control signal, fault feedback signal adopt transformer T1 to isolate safely, and the control signal of control signal secondary output after transformer T1 isolation is divided into multiple signals in parallel, then removes to drive IGBT modular unit 50 by parallel pushpull circuit, gate electrode resistance.The short circuit of described IGBT module and temperature protection; short-circuit detecting detects the collector electrode of IGBT module in real time; temperature detection detects the IGBT module temperature in when operation in real time, when any one occurs alarm signal when short-circuit detecting or temperature sensing circuit, is transferred to outside receiving system by transformer T1.
When the control signal of IGBT modular unit 50 is optical signal communications, increase a photoelectric switching circuit at the front end of burst pulse testing circuit.
The utility model adopts that high and low pressure is isolated safely, the multiple IGBT modules of power supply parallel drive of a push-pull circuit and have short circuit and technical scheme that temperature real-time detection function combines, effectively prevent line-hit, realize the powerful driver output of multiple IGBT modules of low cost, high reliability.
Above an embodiment of the present utility model is had been described in detail, but described content is only preferred embodiment of the present invention, can not be considered to for limiting this practical range of the present utility model.All equalization variation and improvement etc. of doing according to the present patent application scope, within all should still belonging to this patent covering scope of the present utility model.
Claims (5)
1. multiple IGBT modules high-power drive circuit in parallel, it is characterized in that, comprise short circuit and the temperature detecting unit (60) of trigger element (40), IGBT modular unit (50) and the IGBT modular unit of push-pull circuit power supply (10), push-pull circuit unit (20), pulse isolation transformer unit (30), IGBT module; Described push-pull circuit unit (20) is electrically connected with IGBT modular unit (50) by the trigger element (40) of IGBT module, pulse isolation transformer unit (30) is electrically connected with IGBT modular unit (50) with temperature detecting unit (60) by the short circuit of IGBT modular unit, and push-pull circuit power supply (10) provides electric power for push-pull circuit unit (20).
2. multiple IGBT module according to claim 1 high-power drive circuit in parallel, it is characterized in that, described push-pull circuit unit (20) is made up of several identical push-pull circuits, be output as ± 15V of push-pull circuit power supply (10) voltage, the output of push-pull circuit power supply (10) push-pull circuit identical with several electrical connection in parallel respectively.
3. multiple IGBT module according to claim 2 high-power drive circuit in parallel, it is characterized in that, the trigger element (40) of described IGBT module, comprise, the gate electrode resistance that several are identical, the output of described each push-pull circuit is electrically connected with IGBT modular unit (50) respectively by each gate electrode resistance respectively.
4. multiple IGBT module according to claim 1 high-power drive circuit in parallel, it is characterized in that, described pulse isolation transformer unit (30), comprise, isolating transformer T1 and burst pulse testing circuit, the control signal of IGBT modular unit (50) is electrically connected with the former limit of isolating transformer T1 by burst pulse testing circuit, one end of the secondary of isolating transformer T1 is the input electrical connection in parallel of the push-pull circuit identical with several respectively, the other end of the secondary of isolating transformer T1 is electrically connected with IGBT modular unit (50) with temperature detecting unit (60) by the short circuit of IGBT modular unit.
5. multiple IGBT module according to claim 1 high-power drive circuit in parallel, is characterized in that, when the control signal of IGBT modular unit (50) is optical signal communications, increases a photoelectric switching circuit at the front end of burst pulse testing circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420278500.7U CN203933364U (en) | 2014-05-28 | 2014-05-28 | A kind of high-power drive circuit in parallel of multiple IGBT modules |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420278500.7U CN203933364U (en) | 2014-05-28 | 2014-05-28 | A kind of high-power drive circuit in parallel of multiple IGBT modules |
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| CN203933364U true CN203933364U (en) | 2014-11-05 |
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| CN201420278500.7U Expired - Fee Related CN203933364U (en) | 2014-05-28 | 2014-05-28 | A kind of high-power drive circuit in parallel of multiple IGBT modules |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106961227A (en) * | 2017-05-08 | 2017-07-18 | 成都锦江电子***工程有限公司 | Large power high voltage pulse hard switch modulator |
| CN109861504A (en) * | 2019-03-29 | 2019-06-07 | 广东美的制冷设备有限公司 | Air conditioner, intelligent power module and its control method |
| CN110299825A (en) * | 2018-03-22 | 2019-10-01 | 维谛技术有限公司 | A kind of switching device parallel current-sharing system |
| CN110365279A (en) * | 2019-07-15 | 2019-10-22 | 北京精密机电控制设备研究所 | A kind of motor control driving circuit with redundancy isolation drive |
| CN111999629A (en) * | 2020-08-24 | 2020-11-27 | 阳光电源股份有限公司 | IGBT module state monitoring method and device |
| CN112187220A (en) * | 2020-11-27 | 2021-01-05 | 杭州飞仕得科技有限公司 | Semiconductor drive circuit |
-
2014
- 2014-05-28 CN CN201420278500.7U patent/CN203933364U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106961227A (en) * | 2017-05-08 | 2017-07-18 | 成都锦江电子***工程有限公司 | Large power high voltage pulse hard switch modulator |
| CN110299825A (en) * | 2018-03-22 | 2019-10-01 | 维谛技术有限公司 | A kind of switching device parallel current-sharing system |
| CN110299825B (en) * | 2018-03-22 | 2024-03-08 | 维谛技术有限公司 | Parallel current equalizing system for switching devices |
| CN109861504A (en) * | 2019-03-29 | 2019-06-07 | 广东美的制冷设备有限公司 | Air conditioner, intelligent power module and its control method |
| CN110365279A (en) * | 2019-07-15 | 2019-10-22 | 北京精密机电控制设备研究所 | A kind of motor control driving circuit with redundancy isolation drive |
| CN111999629A (en) * | 2020-08-24 | 2020-11-27 | 阳光电源股份有限公司 | IGBT module state monitoring method and device |
| CN112187220A (en) * | 2020-11-27 | 2021-01-05 | 杭州飞仕得科技有限公司 | Semiconductor drive circuit |
| CN112187220B (en) * | 2020-11-27 | 2021-03-09 | 杭州飞仕得科技有限公司 | Semiconductor drive circuit |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141105 Termination date: 20200528 |
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| CF01 | Termination of patent right due to non-payment of annual fee |