CN203911735U - Intelligent power module driving circuit and intelligent module - Google Patents
Intelligent power module driving circuit and intelligent module Download PDFInfo
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- CN203911735U CN203911735U CN201420247829.7U CN201420247829U CN203911735U CN 203911735 U CN203911735 U CN 203911735U CN 201420247829 U CN201420247829 U CN 201420247829U CN 203911735 U CN203911735 U CN 203911735U
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Abstract
The utility model discloses an intelligent power module driving circuit and an intelligent module. The intelligent power module driving circuit comprises a switching tube driving circuit, an IGBT switching tube, an MOS tube, a first power supply input end, a second power supply input end, a first electronic switch and a second electronic switch. The collector electrode and the emitting electrode of the IGBT switching tube are corresponding to the power supply input ends. The gate pole of the IGBT switching tube is connected with the switching tube driving circuit. The drain electrode of the MOS is connected with the collector electrode of the IGBT switching tube. The source electrode of the MOS tube is connected with the emitting electrode of the IGBT switching tube. The grating electrode of the MOS tube is connected with the first end of the first electronic switch and the first end of the second electronic switch. The second end of the first electronic switch is connected with the gate pole of the IGBT switching tube. The second end of the second electronic switch is connected with the source electrode of the MOS tube. Loss of the IGBT switching tube during low current is reduced.
Description
Technical Field
The utility model relates to the field of electronic technology, in particular to intelligent power module drive circuit and intelligent power module.
Background
Intelligent Power modules, i.e. ipm (intelligent Power module), are a Power-driven product that combines Power electronics with integrated circuit technology. The intelligent power module integrates a power switch device and a high-voltage driving circuit, and compared with the traditional discrete scheme, the intelligent power module gains a bigger and bigger market with the advantages of high integration degree, high reliability and the like, is particularly suitable for a frequency converter of a driving motor and various inverter power supplies, and is an ideal power electronic device for variable-frequency speed regulation, metallurgical machinery, electric traction, servo driving and variable-frequency household appliances.
In an intelligent power module in the prior art, a switching tube structure inside the intelligent power module is generally a parallel structure of an IGBT (Insulated Gate Bipolar Transistor) and a FWD (Free Wheeling Diode), and due to the characteristics of the structure of the IGBT, the IGBT is difficult to reduce loss when the current is low. In order to improve the loss of the IGBT switch tube of the smart power module during low current, it may be considered to use a MOSFET (Metal Oxide Semiconductor Field Effect Transistor, hereinafter referred to as MOS Transistor) instead of the IGBT switch tube, but when the MOS Transistor is used, the following problems may occur: since the on voltage in the high-temperature and high-current range becomes high, the allowable current becomes low.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing an intelligent power module drive circuit and intelligent power module, the IGBT switch tube that aims at reducing intelligent power module's loss when the low current.
The utility model provides an intelligent power module driving circuit, which comprises a switching tube driving circuit, an IGBT switching tube, an MOS tube, a first power supply input end, a second power supply input end, a first electronic switch and a second electronic switch; wherein,
the collector of the IGBT switch tube is connected with the input end of the first power supply, the emitter of the IGBT switch tube is connected with the input end of the second power supply, and the gate of the IGBT switch tube is connected with the switch tube driving circuit; the drain electrode of the MOS tube is connected with the collector electrode of the IGBT switch tube, the source electrode of the MOS tube is connected with the emitter electrode of the IGBT switch tube, and the grid electrode of the MOS tube is respectively connected with the first end of the first electronic switch and the first end of the second electronic switch; the second end of the first electronic switch is connected with the gate pole of the IGBT switching tube; the second end of the second electronic switch is connected with the source electrode of the MOS tube; the control end of the first electronic switch and the control end of the second electronic switch are both connected with the switch tube driving circuit.
Preferably, the MOS transistor is an NMOS transistor.
Preferably, the threshold voltage of the MOS transistor is greater than the threshold voltage of the IGBT switch tube.
The utility model also provides an intelligent power module drive circuit, which comprises a switch tube drive circuit, an IGBT switch tube, a first MOS tube, a second MOS tube, a third MOS tube, a first power supply input end and a second power supply input end; wherein,
the collector of the IGBT switch tube is connected with the input end of the first power supply, the emitter of the IGBT switch tube is connected with the input end of the second power supply, and the gate of the IGBT switch tube is connected with the switch tube driving circuit; the drain electrode of the first MOS tube is connected with the collector electrode of the IGBT switch tube, the source electrode of the first MOS tube is connected with the emitter electrode of the IGBT switch tube, and the grid electrode of the first MOS tube is respectively connected with the source electrode of the second MOS tube and the drain electrode of the third MOS tube; the drain electrode of the second MOS tube is connected with the gate electrode of the IGBT switching tube; the source electrode of the third MOS tube is connected with the source electrode of the first MOS tube; and the grid electrode of the second MOS tube and the grid electrode of the third MOS tube are both connected with the switch tube driving circuit.
Preferably, the first MOS transistor is an NMOS transistor.
Preferably, the second MOS transistor is an NMOS transistor, and the third MOS transistor is a PMOS transistor.
Preferably, the threshold voltage of the first MOS transistor is greater than the threshold voltage of the IGBT switch transistor.
The utility model also provides an intelligent power module, intelligent power module includes intelligent power module drive circuit, intelligent power module drive circuit includes switch tube drive circuit, IGBT switch tube, MOS pipe, first power supply input end, second power supply input end, first electronic switch and second electronic switch; wherein,
the collector of the IGBT switch tube is connected with the input end of the first power supply, the emitter of the IGBT switch tube is connected with the input end of the second power supply, and the gate of the IGBT switch tube is connected with the switch tube driving circuit; the drain electrode of the MOS tube is connected with the collector electrode of the IGBT switch tube, the source electrode of the MOS tube is connected with the emitter electrode of the IGBT switch tube, and the grid electrode of the MOS tube is respectively connected with the first end of the first electronic switch and the first end of the second electronic switch; the second end of the first electronic switch is connected with the gate pole of the IGBT switching tube; the second end of the second electronic switch is connected with the source electrode of the MOS tube; the control end of the first electronic switch and the control end of the second electronic switch are both connected with the switch tube driving circuit.
The utility model also provides an intelligent power module, the intelligent power module includes intelligent power module drive circuit, intelligent power module drive circuit includes switch tube drive circuit, IGBT switch tube, first MOS pipe, second MOS pipe, third MOS pipe, first power supply input and second power supply input; wherein,
the collector of the IGBT switch tube is connected with the input end of the first power supply, the emitter of the IGBT switch tube is connected with the input end of the second power supply, and the gate of the IGBT switch tube is connected with the switch tube driving circuit; the drain electrode of the first MOS tube is connected with the collector electrode of the IGBT switch tube, the source electrode of the first MOS tube is connected with the emitter electrode of the IGBT switch tube, and the grid electrode of the first MOS tube is respectively connected with the source electrode of the second MOS tube and the drain electrode of the third MOS tube; the drain electrode of the second MOS tube is connected with the gate electrode of the IGBT switching tube; the source electrode of the third MOS tube is connected with the source electrode of the first MOS tube; and the grid electrode of the second MOS tube and the grid electrode of the third MOS tube are both connected with the switch tube driving circuit.
The utility model provides an intelligent power module drive circuit, including switch tube drive circuit, IGBT switch tube, MOS pipe, first power supply input, second power supply input, first electronic switch and second electronic switch. The IGBT switching tube comprises a first power supply input end, a second power supply input end, a first power supply output end, a second power supply output end, a first power; the drain electrode of the MOS tube is connected with the collector electrode of the IGBT switch tube, the source electrode of the MOS tube is connected with the emitter electrode of the IGBT switch tube, and the grid electrode of the MOS tube is respectively connected with the first end of the first electronic switch and the first end of the second electronic switch; the second end of the first electronic switch is connected with a gate pole of the IGBT switching tube; the second end of the second electronic switch is connected with the source electrode of the MOS tube; the control end of the first electronic switch and the control end of the second electronic switch are both connected with the switch tube driving circuit. The utility model discloses intelligent power module drive circuit adopts the MOS pipe to replace FWD pipe (freewheeling diode) among the intelligent power module drive circuit of prior art, the utility model provides a switching action when this MOS pipe can play the low current, afterflow effect when can playing the high current again (when being the high current, this MOS pipe has replaced the FWD pipe among the prior art), has reduced intelligent power module's IGBT switch tube loss when the low current, has improved intelligent power module's efficiency. And simultaneously, the utility model discloses still have simple structure and the easy advantage of realizing.
Drawings
Fig. 1 is a circuit structure diagram of a first embodiment of the driving circuit of the intelligent power module of the present invention;
fig. 2 is an installation schematic diagram of an IGBT switching tube and an MOS tube in the first embodiment of the intelligent power module driving circuit of the present invention;
fig. 3 is a circuit diagram of a second embodiment of the driving circuit of the smart power module according to the present invention.
The objects, features and advantages of the present invention will be further described with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The utility model provides an intelligent power module drive circuit.
Referring to fig. 1, fig. 1 is a circuit structure diagram of a first embodiment of the driving circuit of the smart power module of the present invention.
The intelligent power module driving circuit in this embodiment includes a switching tube driving circuit 101, an IGBT switching tube 102, an MOS tube 103, a first power supply input end 104, a second power supply input end 105, a first electronic switch S1, and a second electronic switch S2.
Specifically, the collector of the IGBT switch tube 102 is connected to the first power supply input terminal 104, the emitter of the IGBT switch tube 102 is connected to the second power supply input terminal 105, and the gate of the IGBT switch tube 102 is connected to the drive output terminal OUT of the switch tube drive circuit 101; the drain of the MOS tube 103 is connected to the collector of the IGBT switch tube 102, the source of the MOS tube 103 is connected to the emitter of the IGBT switch tube 102, and the gate of the MOS tube 103 is connected to the first end of the first electronic switch S1 and the first end of the second electronic switch S2, respectively; the second end of the first electronic switch S1 is connected to the gate of the IGBT switch tube 102; a second end of the second electronic switch S2 is connected to the source of the MOS transistor 103; the control terminal of the first electronic switch S1 and the control terminal of the second electronic switch S2 are both connected to the switch driving circuit 101 (not shown), and the switch driving circuit 101 controls the open and close states of the first electronic switch S1 and the second electronic switch S2.
In this embodiment, the first electronic switch S1 and the second electronic switch S2 may be integrated inside the switch driving circuit 101.
In this embodiment, the MOS transistor 103 is an NMOS transistor. The threshold voltage of the MOS tube 103 is larger than that of the IGBT switching tube 102. The threshold voltage of the MOS transistor 103 is larger than the threshold voltage of the IGBT switching transistor 102, and the current flowing into the MOS transistor 103 when the IGBT switching transistor 102 is switched can be suppressed, and the temperature rise of the MOS transistor 103 can be suppressed. The threshold voltage of the MOS transistor 103 and the threshold voltage of the IGBT switching tube 102 may be set to different threshold voltages depending on the amount of impurities injected into the channel during manufacturing.
In the intelligent power module driving circuit in this embodiment, when the intelligent power module driving circuit works in the low current region, the switching tube driving circuit 101 outputs a corresponding control signal to control the first electronic switch S1 to be closed and control the second electronic switch S2 to be opened, so that the gate of the MOS tube 103 is connected to the gate of the IGBT switching tube 102. Then, the driving signal outputted from the driving output terminal OUT of the switching tube driving circuit 101 changes from the low potential "L" to the high potential "H", and since the threshold voltage of the MOS tube 103 is higher than the threshold voltage of the IGBT switching tube 102, when the driving signal outputted from the driving output terminal OUT of the switching tube driving circuit 101 changes from the low potential "L" to the high potential "H", the IGBT switching tube 102 is turned on first, and the MOS tube 103 is turned on again, so that a current spike generated at the moment of switching on and off the IGBT switching tube 102 hardly flows into the MOS tube 103, thereby suppressing the temperature rise of the MOS tube 103. After the MOS tube 103 is turned on, a low current mainly flows through the MOS tube 103, and almost no current flows into the IGBT switch tube 102, so that the loss of the IGBT switch tube 102 at the time of the low current is reduced.
When the driving signal output by the driving output terminal OUT of the switching tube driving circuit 101 changes from "H" to "L", since the threshold voltage of the MOS tube 103 is greater than the threshold voltage of the IGBT switching tube 102, the MOS tube 103 is turned off first, the current of the MOS tube 103 starts to drop, and then the IGBT switching tube 102 is turned off again, and the current of the IGBT switching tube 102 is turned off. When the drive signal output from the drive output terminal OUT of the switching tube drive circuit 101 changes from "H" to "L", the MOS tube 103 is turned off first, so that all the current flows into the IGBT switching tube 102 in the on state at this time, and the current does not flow into the MOS tube 103, thereby suppressing the temperature rise of the MOS tube 103.
When the IGBT works in a high-current region, the switching tube driving circuit 101 outputs a corresponding control signal to control the first electronic switch S1 to be switched off and control the second electronic switch S2 to be switched on, so that the grid electrode of the MOS tube 103 is connected with the source electrode, the MOS tube 103 serves as an FWD tube (freewheeling diode), at the moment, high current only flows through the IGBT switching tube 102, and at the moment, the breakdown or damage of the IGBT switching tube 102 caused by high voltage is avoided due to the freewheeling action of the MOS tube 103.
Fig. 2 is the installation schematic diagram of the IGBT switch tube and the MOS tube in the first embodiment of the intelligent power module driving circuit of the present invention.
Referring to fig. 1 and 2 together, in the production of the smart power module, the IGBT switching tube 102 and the MOS tube 103 in the smart power module driving circuit according to the present embodiment are provided on the first lead frame portion 300 and the second lead frame portion 400, respectively. The first lead frame portion 300 and the second lead frame portion 400 have a constant height difference. Meanwhile, the back surface of the first lead frame portion 300 is provided with a heat-dissipating insulation sheet 500, while the back surface of the second lead frame portion 400 is not required to be provided with a heat-dissipating insulation sheet.
The intelligent power module driving circuit provided by the embodiment comprises a switching tube driving circuit, an IGBT switching tube, an MOS tube, a first power supply input end, a second power supply input end, a first electronic switch and a second electronic switch. The IGBT switching tube comprises a first power supply input end, a second power supply input end, a first power supply output end, a second power supply output end, a first power; the drain electrode of the MOS tube is connected with the collector electrode of the IGBT switch tube, the source electrode of the MOS tube is connected with the emitter electrode of the IGBT switch tube, and the grid electrode of the MOS tube is respectively connected with the first end of the first electronic switch and the first end of the second electronic switch; the second end of the first electronic switch is connected with a gate pole of the IGBT switching tube; the second end of the second electronic switch is connected with the source electrode of the MOS tube; the control end of the first electronic switch and the control end of the second electronic switch are both connected with the switch tube driving circuit. This embodiment intelligent power module drive circuit adopts the MOS pipe to replace FWD pipe (freewheeling diode) among the intelligent power module drive circuit of prior art, this MOS pipe in this embodiment can play the switching action when the low current, can play the afterflow effect when the high current again (when the high current promptly, this MOS pipe has replaced FWD pipe among the prior art), the IGBT switch tube loss when the low current of intelligent power module has been reduced, intelligent power module's efficiency has been improved. Meanwhile, the embodiment also has the advantages of simple structure and easy realization.
Fig. 3 is a circuit diagram of a second embodiment of the driving circuit of the smart power module according to the present invention.
Referring to fig. 3, the utility model discloses intelligent power module drive circuit includes switch tube drive circuit 201, IGBT switch tube 202, first MOS pipe 203, second MOS pipe 206, third MOS pipe 207, first power supply input 204 and second power supply input 205.
Specifically, the collector of the IGBT switching tube 202 is connected to the first power supply input terminal 204, the emitter of the IGBT switching tube 202 is connected to the second power supply input terminal 205, and the gate of the IGBT switching tube 202 is connected to the driving output terminal OUT1 of the switching tube driving circuit 201; the drain of the first MOS transistor 203 is connected to the collector of the IGBT switch 202, the source of the first MOS transistor 203 is connected to the emitter of the IGBT switch 202,
the gate of the first MOS transistor 203 is connected to the source of the second MOS transistor 206 and the drain of the third MOS transistor 207, respectively; the drain of the second MOS transistor 206 is connected to the gate of the IGBT switch 202; the source electrode of the third MOS tube 207 is connected with the source electrode of the first MOS tube 203; the gate of the second MOS 206 and the gate of the third MOS 207 are both connected to the control signal output end OUT2 of the switching tube driving circuit 201, and the switching tube driving circuit 201 outputs a corresponding control signal to control the on/off states of the second MOS 206 and the third MOS 207.
In this embodiment, the first MOS transistor 203 and the second MOS transistor 206 are both NMOS transistors, and the third MOS transistor 207 is a PMOS transistor. The threshold voltage of the first MOS transistor 203 is greater than the threshold voltage of the IGBT switch 202.
IN the intelligent power module driving circuit of the present embodiment, the control signal IN2 input by the switching transistor driving circuit 201 determines the function (switching function or freewheeling function) of the first MOS transistor 203. When the intelligent power module driving circuit of the present embodiment operates IN the low current region, the control signal IN2 inputted by the switching tube driving circuit 201 changes from "L" to "H", namely, when the control signal output end OUT2 of the switching tube driving circuit 201 changes from "L" to "H", the second MOS tube 206 is turned on, the gate of the first MOS transistor 203 is shorted with the gate of the IGBT switch 202, at this time, the driving signal IN1 inputted from the switching tube driving circuit 201 is changed from "L" to "H", namely, the driving signal output by the driving output terminal OUT1 of the switching tube driving circuit 201 changes from "L" to "H", because the threshold voltage of the first MOS transistor 203 is greater than the threshold voltage of the IGBT switch 202, the IGBT switch 202 is turned on first, then the first MOS transistor 203 is turned on again, and at this time, the low current mainly flows through the first MOS transistor 203, thereby reducing the loss of the IGBT switch 202 at the time of the low current.
When the driving signal output by the driving output terminal OUT1 of the switching tube driving circuit 201 changes from "H" to "L", because the threshold voltage of the first MOS tube 203 is greater than the threshold voltage of the IGBT switching tube 202, the first MOS tube 203 is turned off first, the current of the first MOS tube 203 starts to drop, and then the IGBT switching tube 202 is turned off again, and the current of the IGBT switching tube 202 is turned off. When the drive signal output by the drive output terminal OUT1 of the switching tube drive circuit 201 changes from "H" to "L", the first MOS tube 203 is turned off first, so that all current flows into the IGBT switching tube 202 which is in the on state at this time, and the current does not flow into the first MOS tube 203, thereby suppressing the temperature rise of the first MOS tube 203.
IN the intelligent power module driving circuit IN this embodiment, when the intelligent power module driving circuit operates IN a high current region, the control signal IN2 input by the switching tube driving circuit 201 is changed from "H" to "L", that is, the control signal output by the control signal output terminal OUT2 of the switching tube driving circuit 201 is changed from "H" to "L", at this time, the third MOS tube 207 is turned on, so that the gate and the source of the first MOS tube 203 are connected, at this time, the first MOS tube 203 functions as an FWD tube (freewheeling diode), at this time, a high current only flows through the IGBT switching tube 202, and at this time, due to the freewheeling action of the first MOS tube 203, breakdown or damage of the IGBT switching tube 202 due to high voltage is avoided.
The intelligent power module driving circuit provided by the embodiment comprises a switching tube driving circuit, an IGBT switching tube, a first MOS tube, a second MOS tube, a third MOS tube, a first power supply input end and a second power supply input end. The IGBT switching tube comprises a first power supply input end, a second power supply input end, a first power supply output end, a second power supply output end, a first power; the drain electrode of the first MOS tube is connected with the collector electrode of the IGBT switch tube, the source electrode of the first MOS tube is connected with the emitter electrode of the IGBT switch tube, and the grid electrode of the first MOS tube is respectively connected with the source electrode of the second MOS tube and the drain electrode of the third MOS tube; the drain electrode of the second MOS tube is connected with the gate electrode of the IGBT switching tube; the source electrode of the third MOS tube is connected with the source electrode of the first MOS tube; and the grid electrode of the second MOS tube and the grid electrode of the third MOS tube are both connected with the switch tube driving circuit. This embodiment intelligent power module drive circuit adopts first MOS pipe to replace FWD pipe (freewheeling diode) among the intelligent power module drive circuit of prior art, this first MOS pipe in this embodiment can play the switching action when the low current, can play the afterflow effect when the high current again (when the high current promptly, this first MOS pipe has replaced FWD pipe among the prior art), the IGBT switch tube loss when the low current of having reduced intelligent power module, intelligent power module's efficiency has been improved. Meanwhile, the embodiment also has the advantages of simple structure and easy realization.
The utility model also provides an intelligent power module, this intelligent power module include intelligent power module drive circuit, and this intelligent power module drive circuit's circuit structure can refer to above-mentioned embodiment, no longer gives unnecessary details here. It should be noted that, since the intelligent power module of the present embodiment adopts the technical solution of the intelligent power module driving circuit, the intelligent power module has all the beneficial effects of the intelligent power module driving circuit.
The above only is the preferred embodiment of the present invention, not limiting the scope of the present invention, all the equivalent structures or equivalent flow changes made by the contents of the specification and the drawings, or directly or indirectly applied to other related technical fields, are included in the same way in the protection scope of the present invention.
Claims (8)
1. An intelligent power module driving circuit is characterized by comprising a switching tube driving circuit, an IGBT switching tube, an MOS tube, a first power supply input end, a second power supply input end, a first electronic switch and a second electronic switch; wherein,
the collector of the IGBT switch tube is connected with the input end of the first power supply, the emitter of the IGBT switch tube is connected with the input end of the second power supply, and the gate of the IGBT switch tube is connected with the switch tube driving circuit; the drain electrode of the MOS tube is connected with the collector electrode of the IGBT switch tube, the source electrode of the MOS tube is connected with the emitter electrode of the IGBT switch tube, and the grid electrode of the MOS tube is respectively connected with the first end of the first electronic switch and the first end of the second electronic switch; the second end of the first electronic switch is connected with the gate pole of the IGBT switching tube; the second end of the second electronic switch is connected with the source electrode of the MOS tube; the control end of the first electronic switch and the control end of the second electronic switch are both connected with the switch tube driving circuit.
2. The driving circuit of claim 1, wherein the MOS transistor is an NMOS transistor.
3. The smart power module driving circuit according to claim 2, wherein the threshold voltage of the MOS transistor is greater than the threshold voltage of the IGBT switching transistor.
4. An intelligent power module driving circuit is characterized by comprising a switching tube driving circuit, an IGBT switching tube, a first MOS tube, a second MOS tube, a third MOS tube, a first power supply input end and a second power supply input end; wherein,
the collector of the IGBT switch tube is connected with the input end of the first power supply, the emitter of the IGBT switch tube is connected with the input end of the second power supply, and the gate of the IGBT switch tube is connected with the switch tube driving circuit; the drain electrode of the first MOS tube is connected with the collector electrode of the IGBT switch tube, the source electrode of the first MOS tube is connected with the emitter electrode of the IGBT switch tube, and the grid electrode of the first MOS tube is respectively connected with the source electrode of the second MOS tube and the drain electrode of the third MOS tube; the drain electrode of the second MOS tube is connected with the gate electrode of the IGBT switching tube; the source electrode of the third MOS tube is connected with the source electrode of the first MOS tube; and the grid electrode of the second MOS tube and the grid electrode of the third MOS tube are both connected with the switch tube driving circuit.
5. The smart power module driving circuit according to claim 4, wherein the first MOS transistor is an NMOS transistor.
6. The driving circuit of claim 5, wherein the second MOS transistor is an NMOS transistor, and the third MOS transistor is a PMOS transistor.
7. The smart power module driving circuit according to claim 6, wherein the threshold voltage of the first MOS transistor is greater than the threshold voltage of the IGBT switching tube.
8. An intelligent power module comprising the intelligent power module driver circuit of any one of claims 1 to 7.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420247829.7U CN203911735U (en) | 2014-05-14 | 2014-05-14 | Intelligent power module driving circuit and intelligent module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420247829.7U CN203911735U (en) | 2014-05-14 | 2014-05-14 | Intelligent power module driving circuit and intelligent module |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106200754A (en) * | 2016-08-30 | 2016-12-07 | 四川蜀旺新能源股份有限公司 | A kind of photovoltaic generating system maximum power tracking device |
| CN106849729A (en) * | 2017-03-23 | 2017-06-13 | 广东美的制冷设备有限公司 | SPM and air-conditioner |
| WO2018095286A1 (en) * | 2016-11-28 | 2018-05-31 | 深圳市道通智能航空技术有限公司 | Electronic speed controller integrated circuit and unmanned aerial vehicle |
-
2014
- 2014-05-14 CN CN201420247829.7U patent/CN203911735U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106200754A (en) * | 2016-08-30 | 2016-12-07 | 四川蜀旺新能源股份有限公司 | A kind of photovoltaic generating system maximum power tracking device |
| WO2018095286A1 (en) * | 2016-11-28 | 2018-05-31 | 深圳市道通智能航空技术有限公司 | Electronic speed controller integrated circuit and unmanned aerial vehicle |
| CN106849729A (en) * | 2017-03-23 | 2017-06-13 | 广东美的制冷设备有限公司 | SPM and air-conditioner |
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