CN110365195A - A kind of three level IGBT drive circuits based on QP12W05S-37 - Google Patents
A kind of three level IGBT drive circuits based on QP12W05S-37 Download PDFInfo
- Publication number
- CN110365195A CN110365195A CN201910567966.6A CN201910567966A CN110365195A CN 110365195 A CN110365195 A CN 110365195A CN 201910567966 A CN201910567966 A CN 201910567966A CN 110365195 A CN110365195 A CN 110365195A
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- igbt
- qp12w05s
- signal
- circuit
- fault
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The three level IGBT drive circuits based on QP12W05S-37 that present invention discloses a kind of; three level IGBT circuit structures are made of control module, PWM output buffer, temperature protection circuit, overcurrent and short-circuit protection circuit and four road IGBT units, and every road IGBT cellular construction is identical to be made of an IGBT module and a QP12W05S-37 driver.The present invention is based on the three level IGBT drive circuits of QP12W05S-37; three level IGBT drive circuits are constructed using the IGBT driving chip QP12W05S-37 of 4 golden rising Yang; required device is few, without occupying too big pcb board space, while having good overcurrent and short-circuit protection.
Description
Technical field
The present invention relates to three level IGBT drive circuit fields.
Background technique
IGBT (insulated gate bipolar transistor) is by BJT (double pole triode) and MOSFET (insulated-gate type field effect
Pipe) composition compound full-control type voltage driven type power semiconductor, the advantages of combining two kinds of devices, driving power it is small and
Saturation pressure reduces.It is widely used in small size, efficient variable-frequency power sources, UPS and inverter field.IGBT drive circuit refers to
Driving IGBT module allows it to work normally, and the circuit protected simultaneously to it.In three level IGBT drive circuit structures
The voltage peak that each device for power switching is born only has the half of two level blocks, reduces the electricity of each power switch tube
Compression, can solve the not high enough problem of the universal pressure resistance of switching device, at the same three level IGBT drive circuit structures relative to
Two level blocks can be such that output waveform ladder increases, and at different levels amplitudes, which change, to be reduced, and be allowed to be closer to sine wave.Three
Level IGBT drive circuit is made of 4 IGBT devices, and current IGBT drive circuit is mostly to directly drive, required allowance compared with
Greatly, device is more, needs to occupy bigger pcb board space, it is too fat to move huge to be allowed to whole system.
Summary of the invention
The technical problem to be solved by the present invention is to realize a kind of three level IGBT driving electricity based on QP12W05S-37
Road constructs three level IGBT drive circuits using the IGBT driving chip QP12W05S-37 of 4 golden rising Yang.
To achieve the goals above, a kind of the technical solution adopted by the present invention are as follows: three level based on QP12W05S-37
IGBT drive circuit, three level IGBT circuit structures by control module, PWM output buffer, temperature protection circuit, overcurrent and
Short-circuit protection circuit and four road IGBT units composition, every road IGBT cellular construction are identical by an IGBT module and one
QP12W05S-37 driver is constituted；
The IGBT device drive output output pulse signal of control module is to PWM output buffer, the PWM output
Buffer circuit exports the driving signal input that four road pulse signals are delivered to four QP12W05S-37 drivers respectively, each
The QP12W05S-37 actuator drive signal output end output drive signal is to an IGBT module；
The fault-signal output end output fault-signal of four IGBT modules is described to overcurrent and breaking protection circuit
The signal input part of overcurrent and short-circuit protection circuit output fault-signal to QP12W05S-37 driver, the QP12W05S-37
Driver malfunction signal output end exports fault-signal to control module；
Temperature protection circuit, the temperature protection circuit output temperature signal to control are equipped in each IGBT module
The temperature signal input of module.
The PWM output buffer uses buffer 74LS125, and the control module is DSP, and the 4 of the DSP output
Road pwm signal DSP_PWM1-DSP_PWM4 is connected on the input pin A1-A4 of buffer 74LS125, the buffer
The pin OE1-OE4 of 74LS125 is grounded, and the buffer 74LS125 output pin Y1-Y4 is connected by current-limiting resistance respectively
To the driving signal input VIN+ of four road QP12W05S-37 drivers.
The fault-signal output end Fault_QP1 of the QP12W05S-37 driver is returned fault-signal by optocoupler
To the I/O port of DSP, the DSP obtains fault-signal by the level state variation of detection I/O port.
1, No. 2 pin of the QP12W05S-37 driver is directly accessed+15V power supply, and 3, No. 4 pins are separately connected drive
Dynamic signal current-limiting resistance and ground, 8,9, No. 10 pins be individually insulated power positive end, isolator, isolated power supply negative terminal, No. 11 pins
Directly drive IGBT module by grid resistance, No. 12 pins are directly coupled to isolated power supply anode, No. 13 pins connection overcurrents and
Short-circuit protection circuit, No. 14 pins are overcurrent soft switching time adjustment pins, and No. 15 pins are returned fault-signal by optocoupler
To the I/O port of DSP, No. 16 pins are that short circuit inhibits time adjustment pin.
The IGBT module uses F3L100R12W2H3_B11 module, and the IGBT module has been internally integrated a subzero temperature
Spend coefficient resistance.
The present invention is based on the three level IGBT drive circuits of QP12W05S-37, use the IGBT driving chip of 4 golden rising Yang
QP12W05S-37 constructs three level IGBT drive circuits, and required device is few, without occupying too big pcb board space, has simultaneously
Good overcurrent and short-circuit protection.
Detailed description of the invention
The content of width attached drawing every in description of the invention expression is briefly described below:
Fig. 1 is control module electrical block diagram；
Fig. 2 is QP12W05S-37 electrical block diagram；
Fig. 3 is that IGBT temperature protects electrical block diagram；
Fig. 4 is the single channel IGBT drive circuit block diagram based on QP12W05S-37；
Fig. 5 is the three level IGBT drive circuit block diagrams based on QP12W05S-37.
Specific embodiment
Below against attached drawing, by the description of the embodiment, for example related each component of a specific embodiment of the invention
Shape, construction, the mutual alignment between each section and connection relationship, the effect of each section and working principle, manufacturing process and
Operate with method etc., is described in further detail, to help those skilled in the art to inventive concept of the invention, technology
Scheme has more complete, accurate and deep understanding.
The three level IGBT drive circuits based on QP12W05S-37 mainly include control module circuit, QP12W05S-37
Circuit and IGBT temperature protect circuit.System obtain it is electric, when normal work, pulse signal needed for driving IGBT device by
074LS125, then exported by 74LS125 to the driving signal input of QP12W05S-37, the driving signal of QP12W05S-37 is defeated
Outlet exports the waveform of same-phase therewith, and then drives IGBT device；When overcurrent or short circuit occur for IGBT device, overcurrent or short
Road failure input terminal detects fault-signal, and circuit start overcurrent soft turn-off function, after slowly dropping grid voltage, block IGBT is driven
Moving pulse and timing reset, while being given fault-signal to controller DSP by fault-signal output end.Three level IGBT circuits
Structure is made of 4 road IGBT, and control module circuit, driving circuit and IGBT temperature protection circuit are completely the same, only with it
In all the way be used as explanation.
As shown in Figure 1, control module circuit: control module generally refers to the associated units of DSP, FPGA or both, mainly
For sending pwm pulse signal, signal buffer circuit and fault-signal passback.The present invention selects DSP as control module,
4 road pwm signal DSP_PWM1~DSP_PWM4 of DSP output are connected to input pin A1~A4 of buffer 74LS125
On, pwm signal needs to add pull down resistor, prevents powered on moment IGBT from misleading, and enabled pin OE1~OE4 of 74LS125 is
Ground connection, works normally buffer 74LS125, and output pin Y1~Y4 passes through current-limiting resistance respectively and is connected to four tunnels
The driving signal input VIN+ of QP12W05S-37, according to QP12W05S-37 service manual upper flow resistance selection formula R=
(input voltage -1.7V)/16mA-150 Ω, the present invention in use 62 Ω resistance.The fault-signal output end of QP12W05S-37
Fault-signal is back to the I/O port of DSP by optocoupler by Fault_QP1, and the level state variation by detecting I/O port judges failure
The presence or absence of signal.
QP12W05S-37 circuit as shown in Figure 2, QP12W05S-37 is a kind of hybrid integrated type of included isolated power supply
IGBT driver is applied to the occasion of grid amplification driving.It is provided by optocoupler for device for power switching necessary first
Electrical isolation between grade.And overcurrent and short-circuit protection function are realized using the method for the collector undersaturation pressure drop of detection IGBT
Energy.When overcurrent or short-circuit protection act, driving circuit will export fault-signal.
For QP12W05S-37 circuit as shown in Fig. 2, driver single supply is powered, 1, No. 2 pin is power input positive and negative terminal,
It is directly accessed+15V power supply；3, No. 4 pins are driving signal input positive and negative terminals, are separately connected driving signal current-limiting resistance and ground；
8,9, No. 10 pins be respectively isolated power supply anode, isolator, isolated power supply negative terminal, respectively output with input power electrical isolation
+ 15V and -9V, to drive and turn off IGBT；No. 11 pins are driving signal output, are directly driven by grid resistance
IGBT module；No. 12 pins are internal power pipe collectors, according to driver service manual, are directly coupled to isolated power supply anode；
No. 13 pins are overcurrent or short trouble input pin；No. 14 pins are overcurrent soft switching time adjustment pins；No. 15 pins are
Fault-signal, the I/O port of DSP is back to by optocoupler by fault-signal output；No. 16 pins are that short circuit inhibits (blind area) time tune
Save pin.
When short circuit or overcurrent occur for IGBT circuit, driver protects circuit to start to work, and driver will be turned off slowly
IGBT, default soft switching time are 4.5uS, can connect Rf resistance or Cf capacitor by outside to adjust the soft switching time, external
Rf resistance can reduce the soft switching time, and external Cf capacitor can increase the soft switching time；When short circuit or overcurrent occurs, driver
From detect short circuit or cross flow to grid potential drop to normal amplitude 90% this period be referred to as short-circuit protection inhibit
(blind area) time, internal drive set it is the smallest short circuit inhibit (blind area) time, default short circuit inhibit (blind area) time be
1.6uS can adjust the blind area time by external Ctrip capacitor, and the capacitance for increasing Ctrip capacitor can increase short-circuit inhibition
(blind area) time.It is default time that soft switching time of the invention and short circuit, which inhibit (blind area) time, Rf resistance, Cf capacitor and
Ctrip capacitor does not connect.
According to driver service manual, grid resistance selects 5 Ω, the power of grid resistance by IGBT gate driving power
It determines, in general the general power of grid resistance should be at least 2 times of gate driving power.IGBT gate driving power P=
FUQ, wherein F is IGBT working frequency, and U is the peak-to-peak value for driving output voltage, and Q is to can refer to IGBT module for gate charge
Parameter handbook.In the present invention, the IGBT used is the F3L100R12W2H3_B11 module of Infineon company, exports positive voltage
15V, negative voltage -9V, so U=24V, working frequency 6.4KHz, Q=0.8uC can calculate P=0.12W, grid resistance
Noninductive resistance or multiple resistor coupled in parallel is preferred to reduce inductance, therefore two 10 Ω/0.25W resistor coupled in parallel is used to use.
As shown in figure 3, IGBT temperature protect circuit, the present invention in, the IGBT used is Infineon company
F3L100R12W2H3_B11 module has been internally integrated a negative tempperature coefficient thermistor, works normally warm range -45
DEG C~150 DEG C.100 DEG C are selected in the present invention as temperature protection threshold value, at 100 DEG C of temperature characterisitic displays temperature, resistance value is
400Ω.For circuit as shown in figure 3, IGBT NTC is the thermistor that IGBT is internally integrated, the voltage of V2 point is 3.3V, works as IGBT
When temperature is lower (be lower than 100 DEG C), V3 point voltage is greater than 5*400/ (200+400)=3.3V, by voltage comparator LM211,
The level of Tem_DSP point is low level；(it is higher than 100 DEG C) when IGBT temperature is high, Tem_DSP point is high level.Tem_DSP point
It is connected on the I/O port of DSP, the level state variation by detecting I/O port judges the presence or absence of temperature protection signal.
The present invention is exemplarily described above in conjunction with attached drawing, it is clear that the present invention implements not by aforesaid way
Limitation, as long as the improvement for the various unsubstantialities that the inventive concept and technical scheme of the present invention carry out is used, or without changing
It is within the scope of the present invention into the conception and technical scheme of the invention are directly applied to other occasions.
Claims (5)
1. a kind of three level IGBT drive circuits based on QP12W05S-37, which is characterized in that three level IGBT circuit structures by
Control module, PWM output buffer, temperature protection circuit, overcurrent and short-circuit protection circuit and four road IGBT unit groups
At every road IGBT cellular construction is identical to be made of an IGBT module and a QP12W05S-37 driver；
The IGBT device drive output output pulse signal of control module to PWM output buffer, the PWM output buffers
Four road pulse signal of circuit output is delivered to the driving signal input of four QP12W05S-37 drivers respectively, each described
QP12W05S-37 actuator drive signal output end output drive signal is to an IGBT module；
The fault-signal output end of four IGBT modules exports fault-signal to overcurrent and breaking protection circuit, the overcurrent
The signal input part of fault-signal to QP12W05S-37 driver, the QP12W05S-37 driving are exported with short-circuit protection circuit
Device fault-signal output end exports fault-signal to control module；
Temperature protection circuit, the temperature protection circuit output temperature signal to control module are equipped in each IGBT module
Temperature signal input.
2. the three level IGBT drive circuits according to claim 1 based on QP12W05S-37, it is characterised in that: described
PWM output buffer uses buffer 74LS125, and the control module is DSP, 4 road pwm signals of the DSP output
DSP_PWM1-DSP_PWM4 is connected on the input pin A1-A4 of buffer 74LS125, the buffer 74LS125's
Pin OE1-OE4 is grounded, and the buffer 74LS125 output pin Y1-Y4 passes through current-limiting resistance respectively and is connected to four tunnels
The driving signal input VIN+ of QP12W05S-37 driver.
3. the three level IGBT drive circuits according to claim 2 based on QP12W05S-37, it is characterised in that: described
Fault-signal is back to the I/O port of DSP by optocoupler by the fault-signal output end Fault_QP1 of QP12W05S-37 driver,
The DSP obtains fault-signal by the level state variation of detection I/O port.
4. the three level IGBT drive circuits according to claim 1,2 or 3 based on QP12W05S-37, it is characterised in that:
1, No. 2 pin of the QP12W05S-37 driver is directly accessed+15V power supply, and 3, No. 4 pins are separately connected driving signal limit
Leakage resistance and ground, 8,9, No. 10 pins be individually insulated power positive end, isolator, isolated power supply negative terminal, No. 11 pins pass through grid
Resistance directly drives IGBT module, and No. 12 pins are directly coupled to isolated power supply anode, No. 13 pin connection overcurrents and short-circuit protection
Circuit, No. 14 pins are overcurrent soft switching time adjustment pins, and fault-signal is back to the IO of DSP by optocoupler by No. 15 pins
Mouthful, No. 16 pins are that short circuit inhibits time adjustment pin.
5. the three level IGBT drive circuits according to claim 4 based on QP12W05S-37, it is characterised in that: described
IGBT module uses F3L100R12W2H3_B11 module, and the IGBT module has been internally integrated a negative temperature coefficient thermistor power
Resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910567966.6A CN110365195A (en) | 2019-06-27 | 2019-06-27 | A kind of three level IGBT drive circuits based on QP12W05S-37 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910567966.6A CN110365195A (en) | 2019-06-27 | 2019-06-27 | A kind of three level IGBT drive circuits based on QP12W05S-37 |
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| CN110365195A true CN110365195A (en) | 2019-10-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910567966.6A Pending CN110365195A (en) | 2019-06-27 | 2019-06-27 | A kind of three level IGBT drive circuits based on QP12W05S-37 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111276941A (en) * | 2020-02-23 | 2020-06-12 | 霍煜 | IGBT drive overcurrent protection and short-circuit protection system circuit |
| CN113839653A (en) * | 2021-09-29 | 2021-12-24 | 陕西省地方电力（集团）有限公司 | SiC MOSFET drive circuit based on pure hardware device overcurrent protection |
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| CN202918184U (en) * | 2012-10-17 | 2013-05-01 | 深圳市禾望电气有限公司 | Three-level IGBT (Insulated Gate Bipolar Translator) driving module |
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| CN202410973U (en) * | 2012-01-16 | 2012-09-05 | 蔡作岩 | Ultrasonic dirt-resisting and removing circuit |
| CN202918184U (en) * | 2012-10-17 | 2013-05-01 | 深圳市禾望电气有限公司 | Three-level IGBT (Insulated Gate Bipolar Translator) driving module |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111276941A (en) * | 2020-02-23 | 2020-06-12 | 霍煜 | IGBT drive overcurrent protection and short-circuit protection system circuit |
| CN113839653A (en) * | 2021-09-29 | 2021-12-24 | 陕西省地方电力（集团）有限公司 | SiC MOSFET drive circuit based on pure hardware device overcurrent protection |
| CN113839653B (en) * | 2021-09-29 | 2023-08-29 | 国网陕西省电力有限公司电力科学研究院 | SiC MOSFET driving circuit based on overcurrent protection of pure hardware device |
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Application publication date: 20191022 |