CN203883010U - Circuit power tube structure - Google Patents
Circuit power tube structure Download PDFInfo
- Publication number
- CN203883010U CN203883010U CN201420265447.7U CN201420265447U CN203883010U CN 203883010 U CN203883010 U CN 203883010U CN 201420265447 U CN201420265447 U CN 201420265447U CN 203883010 U CN203883010 U CN 203883010U
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- China
- Prior art keywords
- electrode
- active area
- circuit power
- power tube
- tubular construction
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- Expired - Lifetime
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- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000010276 construction Methods 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 3
- 238000003491 array Methods 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A circuit power tube structure comprises first active regions and second active regions which are arranged above a semiconductor substrate, a first electrode connected with the first active regions, and a second electrode connected with the second active regions, wherein the first active regions and the second active regions are in forms of strip-shaped arrays which are arranged in a staggered manner; the first electrode and the second electrode belong to a same metal layer, the second electrode is composed of a left-side second electrode and a right-side second electrode, the left-side second electrode and the right-side second electrode are respectively positioned on left and right sides of the first electrode, rectangular sawtooth shapes complementary with the shape of one another are formed in the vicinities of the first electrode, the left-side second electrode and the right-side second electrode, and the left-side second electrode, the first electrode and the right-side second electrode are distributed in an axial symmetry. The metal electrodes of the circuit power tube structure are designed in a staggered sawtooth manner, source drain currents are distributed in a staggered manner in the whole power tube well, the current uniformity is improved, the heat radiation of the power tube is facilitated, and the working performance of the power tube is improved.
Description
Technical field
The utility model belongs to field of semiconductor manufacture, relates to a kind of semiconductor device structure, particularly relates to a kind of circuit power tubular construction.
Background technology
In amplifying circuit, serve as the pipe of final stage output power tube, in existing integrated circuit technology, majority can be integrated in integrated circuit (IC) chip by the power tube of relatively high power and carry out overall package.
Due to power tube in general power much larger than other devices in chip, therefore the structure of power tube needs special design to adapt to its unique requirement, the large electric current that particularly power tube flows through in the time of work has proposed very high request to each layout layer line of device, on whole electric current passes through, can both meet the design difficulty that current requirements is power tube always, wish that utilization metal level design still less has the device of enough current capacities.
Prior art adopts through type design more, although adopt through type design simple, current capacity practical limited is in the half area of power tube, and through type design because source-drain current is too concentrated, to dispelling the heat and electric current uniformity all has adverse effect.
Utility model content
For overcoming the power tube poor heat radiation of prior art, the technological deficiency that electric current uniformity is bad, the utility model provides a kind of circuit power tubular construction.
Circuit power tubular construction described in the utility model, comprise the first active area and the second active area that are positioned at Semiconductor substrate top, described the first active area and the second active area are staggered bar shaped array format, and the first electrode being connected with the first active area respectively, the second electrode being connected with the second active area;
Described the first electrode and the second electrode belong to same metal level, described the second electrode is made up of left side the second electrode and right side the second electrode, described left side the second electrode and right side the second electrode lay respectively at the first electrode left and right sides, the rectangle zigzag fashion of the adjacent place forming shape complementation of described the first electrode and left side the second electrode, right side the second electrode, described left side the second electrode, the first electrode, right side the second electrode become axial symmetry to distribute.
Preferably, described the first active area and/or middle part, the second active area have insulation interrupt structure, and described insulation interrupt structure is positioned at the first electrode below.
Concrete, described insulation interrupt structure is shallow source region or the non-injection regions of being injected with.
Preferably, the sawtooth end width of described rectangle broached-tooth design is not less than 10 times of minimum feature.
Preferably, described the first electrode and the second electrode are metal top layer, are directly connected with active area or are connected with active area by the each metal level below top-level metallic.
Further: on described the first electrode, left side the second electrode, right side the second electrode, to be all at least distributed with plural pin.
Adopt circuit power tubular construction described in the utility model, metal electrode is the design of alternating expression sawtooth, is interspersed at whole power tube trap source-drain current, has improved electric current uniformity, and favourable to the heat radiation of power tube, has improved the service behaviour of power tube.
Brief description of the drawings
Fig. 1 illustrates the schematic diagram of a kind of embodiment of the utility model; In Fig. 2, example has provided the staggered schematic diagram in four the first active areas and the second active area
In each figure, Reference numeral is 1-first electrode 2-left side second electrode 3-right side second electrode 4-first active area 5-the second active area 6-insulation interrupt structure 7-pin.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
Circuit power tubular construction described in the utility model, comprise the first active area 4 and the second active area 5 that are positioned at Semiconductor substrate top, described the first active area and the second active area are staggered bar shaped array format, and the first electrode 1 being connected with the first active area respectively, the second electrode being connected with the second active area.
Described the first electrode and the second electrode belong to same metal level, described the second electrode is made up of left side the second electrode and right side the second electrode, described left side the second electrode 2 and right side the second electrode 3 lay respectively at the first electrode left and right sides, the rectangle zigzag fashion of the adjacent place forming shape complementation of described the first electrode 1 and left side the second electrode, right side the second electrode, described left side the second electrode 2, the first electrode 1,3 one-tenth axial symmetry of right side the second electrode distribute.
Integrated circuit technology field is known, above-mentioned the first active area and the second active area are any one in source region or the drain region of single power device under normal conditions, the grid of power MOS pipe is conventionally gone between and is drawn separately by polysilicon gate, source region and drain region are realized and being electrically connected with upper strata metal by metal aperture respectively, for current common power tube Classic couture, source region and drain region are as shown in Figure 2, in Fig. 2, example has provided the staggered schematic diagram in four the first active areas and the second active area, the not actual certain shape existing of the ledge of the left and right sides, it is only the mark processing for convenient differentiation is done in Fig. 2.
The second active area, left side from left to right, the first active area and the second active area, right side as shown in Figure 1 run through in these bar shaped active areas, respectively by metal aperture mode, for example be connected with the overlapping region punching of the first electrode in the first active area, be connected in the punching of the overlapping region of the second active area and left and right side the second electrode, realize being electrically connected of electrode and active area.For power tube, large electric current is conventionally from the first electrode stream to the second electrode, for bar shaped active area, the utility model current path converges from two side direction central authorities, adopt complementation electrode shape to increase to greatest extent electrode area, left side the second electrode 2, the first electrode 1,3 one-tenth axial symmetry of right side the second electrode distribute simultaneously, and above measure has all improved current strength and uniformity.For improving the antistatic effect of power tube, rectangle sawtooth end width should be not less than 10 times of minimum feature.
In aforementioned applications mode, the second electrode of two separation links into an integrated entity by interconnected active area, bottom, in reality, the utility model also can be applicable to two applicable cases that the second electrode is not interconnected, for example the first or second middle part, active area of bottom is arranged to insulation interrupt structure 6, make active area be divided into the structure of mutual insulating in two electricity, again two the second electrodes are connected respectively to the active area of the left and right sides, reality has formed two source electrodes or the independently device that drains, and has expanded range of application of the present utility model.Insulation interrupt structure should be positioned at the first electrode below, and the mode that realizes insulation is easy to realize in this area, for example, insulation layer is not injected or shallow injection, realizes the high value of insulation layer.
The first and second electrodes can be the metal level of next-door neighbour active area, but are conventionally set to metal top layer, in integrated circuit technology manufacture process, and the conventionally more than one deck of metal level, by punching between each layer of metal, the electricity realizing between adjacent metal connects.While using top-level metallic, top-level metallic arranges a more than pin 7 conventionally, as shown in Figure 1, on the first electrode, left side the second electrode, right side the second electrode, is evenly distributed with respectively 2,3,3 pins 7.
Above-described is only preferred embodiment of the present utility model; described embodiment is not in order to limit scope of patent protection of the present utility model; therefore the equivalent structure that every utilization specification of the present utility model and accompanying drawing content are done changes, and in like manner all should be included in protection range of the present utility model.
Claims (1)
1. circuit power tubular construction, comprise the first active area (4) and the second active area (5) that are positioned at Semiconductor substrate top, described the first active area and the second active area are staggered bar shaped array format, and the first electrode being connected with the first active area respectively, the second electrode being connected with the second active area;
It is characterized in that, described the first electrode (1) and the second electrode belong to same metal level, described the second electrode is made up of left side the second electrode (2) and right side the second electrode (3), described left side the second electrode and right side the second electrode lay respectively at the first electrode left and right sides, the rectangle zigzag fashion of the adjacent place forming shape complementation of described the first electrode and left side the second electrode, right side the second electrode, described left side the second electrode, the first electrode, right side the second electrode become axial symmetry to distribute.
2. a circuit power tubular construction as claimed in claim 1, is characterized in that, described the first active area and/or middle part, the second active area have insulation interrupt structure (6), and described insulation interrupt structure is positioned at the first electrode (1) below.
3. a circuit power tubular construction as claimed in claim 2, is characterized in that, described insulation interrupt structure is shallow source region or the non-injection regions of being injected with.
4. a circuit power tubular construction as claimed in claim 1, is characterized in that, the sawtooth end width of described rectangle broached-tooth design is not less than 10 times of minimum feature.
5. a circuit power tubular construction as claimed in claim 1, is characterized in that, described the first electrode and the second electrode are metal top layer, is directly connected with active area or each metal level of passing through below top-level metallic is connected with active area.
6. a circuit power tubular construction as claimed in claim 5, is characterized in that: on described the first electrode, left side the second electrode, right side the second electrode, be all at least distributed with plural pin (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420265447.7U CN203883010U (en) | 2014-05-23 | 2014-05-23 | Circuit power tube structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420265447.7U CN203883010U (en) | 2014-05-23 | 2014-05-23 | Circuit power tube structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203883010U true CN203883010U (en) | 2014-10-15 |
Family
ID=51683483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420265447.7U Expired - Lifetime CN203883010U (en) | 2014-05-23 | 2014-05-23 | Circuit power tube structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203883010U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112951788A (en) * | 2019-12-10 | 2021-06-11 | 圣邦微电子（北京）股份有限公司 | Power tube |
-
2014
- 2014-05-23 CN CN201420265447.7U patent/CN203883010U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112951788A (en) * | 2019-12-10 | 2021-06-11 | 圣邦微电子（北京）股份有限公司 | Power tube |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141015 |
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| CX01 | Expiry of patent term |