CN203741407U - Magnetron sputtering rotating target - Google Patents
Magnetron sputtering rotating target Download PDFInfo
- Publication number
- CN203741407U CN203741407U CN201420062629.4U CN201420062629U CN203741407U CN 203741407 U CN203741407 U CN 203741407U CN 201420062629 U CN201420062629 U CN 201420062629U CN 203741407 U CN203741407 U CN 203741407U
- Authority
- CN
- China
- Prior art keywords
- target
- magnetron sputtering
- bushing pipe
- indium
- conductive adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 15
- 230000001070 adhesive effect Effects 0.000 claims abstract description 14
- 239000000853 adhesive Substances 0.000 claims abstract description 13
- 239000011347 resin Substances 0.000 claims description 22
- 229920005989 resin Polymers 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- -1 pottery Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 abstract description 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 16
- 238000004544 sputter deposition Methods 0.000 abstract description 11
- 239000013077 target material Substances 0.000 abstract description 5
- 238000000354 decomposition reaction Methods 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
The utility model relates to a magnetron sputtering rotating target which comprises a tubular liner tube and a target material which is fixed on the outer wall of the liner tube and rotates along with the liner tube, wherein a middle layer is arranged on a connecting surface between the liner tube and the target material and serves as a conductive adhesive. According to the rotating target, the conductive adhesive is adopted as the middle layer for binding and connecting the liner tube with the target material; as the conductive adhesive is very excellent in electrical and heat conductivity and very high in adhesive capacity, the conductive adhesive cannot flow after being solidified and can replace expensive indium, the cost is reduced, and the electrical and heat conductivity of the linear tube and the target material can be improved; during sputtering, generated heat is increased along with the increment of the sputtering power, the off-target situation is easily caused after the melting point of indium is reached, and the decomposition temperature of the conductive adhesive is more than double that of indium in comparison with indium, so that the off-target situation cannot be caused even if the sputtering power is relatively high and the safety is greatly improved. The rotating target can be applied to vacuum magnetron sputtering.
Description
Technical field
The utility model relates to magnetron sputtering field, particularly a kind of magnetron sputtering rotary target.
Background technology
The most frequently used method of preparing film is vacuum magnetic-control sputtering method at present.Vacuum magnetic-control sputtering method is to be filled with appropriate argon gas in high vacuum, applies the volts DS of hundreds of K between negative electrode (Style Columu Talget or planar target) and anode (plated film locular wall), produces magnet controlled anomalous glow discharge in coating chamber, and argon gas is ionized.Argon ion is accelerated and bombarding cathode target surface by negative electrode, and target material surface atom sputtering is out deposited on and on substrate surface, forms film.
Sputter comprises cylindric swivel pipe with rotary target, and the outside surface of this swivel pipe has been fixed by socket target.Target and swivel pipe are connected and fixed by middle layer, and heat-conductivity conducting.What present domestic target industry intermediate layer material adopted is the alloy material of low melting point metal indium or indium, be characterized in that fusing point is low, middle layer is thicker (0.3-0.5mm), thermotolerance is poor, easily flow, cause like this both to affect normal use, serious meeting causes to miss the target and stops line.
Utility model content
In order to overcome above-mentioned technical problem, the purpose of this utility model is to provide a kind of heat conduction, magnetron sputtering rotary target that conductivity is good.
The technical scheme that the utility model adopts is:
A kind of magnetron sputtering rotary target, comprises the bushing pipe of tubulose and fixedly sleeved on bushing pipe outer wall and with the target of bushing pipe rotation, the joint face of described bushing pipe and target is provided with middle layer, and described middle layer is conductive resin.
As the further improvement of technique scheme, the thickness of described conductive resin is 0.05-0.2mm.
As the further improvement of technique scheme, described conductive resin comprises silver conductive adhesive, copper conductive adhesive or aluminium conductive resin.
As the further improvement of technique scheme, the material of described target is alloy, pottery, graphite or silicon.
As the further improvement of technique scheme, described bushing pipe is made up of conductive material.
As the further improvement of technique scheme, described bushing pipe is threaded with target, and described conductive resin is distributed in thread joint face and is full of bushing pipe and the thread pitch of target.
The beneficial effects of the utility model are: middle layer of the present utility model adopts conductive resin, and by bushing pipe, binding is connected with target, because the electrical and thermal conductivity of conductive resin is very good, and adhesive capacity is very strong, it can not produce mobile after solidifying, can substitute expensive indium metal, provide cost savings, be more conducive to improve the conductive and heat-conductive ability of bushing pipe and target; In sputter procedure, the heat of the larger generation of sputtering power is larger, easily misses the target reaching after the fusing point of indium, and compared with indium, it is more than one times that the decomposition temperature of conductive resin is indium, even larger sputtering power also can not cause and miss the target, security greatly improved.
Brief description of the drawings
Below in conjunction with drawings and embodiments, the utility model is further illustrated.
Fig. 1 is the first example structure schematic diagram of the present utility model;
Fig. 2 is the second example structure schematic diagram of the present utility model;
Fig. 3 is the enlarged diagram of A part in Fig. 2.
Embodiment
Magnetron sputtering rotary target as shown in Figure 1 to Figure 3, comprises bushing pipe 1 and the fixedly sleeved target 2 rotating on bushing pipe 1 outer wall and with bushing pipe 1 of tubulose, and the joint face of bushing pipe 1 and target 2 is provided with middle layer, and this middle layer is conductive resin 3.
Use the rotary target of the present embodiment can promote greatly sputter operating power.Its reason is that in prior art, the indium metal fusing point as middle layer is low, based on large the produced heat of sputtering power with regard to large principle, after reaching its fusing point, indium metal liquefies, liquid state bottom has adhesive property, and mobility is very good, just mean easily and miss the target, limited the lifting of sputtering power; And the decomposition temperature of conductive resin is more than 300 DEG C, be indium or indium alloy fusing point one times, security improves greatly, and the normal work of the impact of can not missing the target under high-power sputtering condition, improves the working efficiency of downstream manufacturing enterprise greatly.Through detecting data declaration, indium is zero >=160 DEG C of its shearing resistances at present, and the present embodiment is at 120 DEG C-300 DEG C its shearing resistance > 200Kg.
Indium must just can become liquid state on 160 DEG C of its fusing points, just there is welding property, target 2 and the welding efficiency of bushing pipe 1 are brought to certain impact, and conductive resin is liquid at normal temperatures, can directly be coated on the joint face of target 2 and bushing pipe 1 and wait for and solidifying, and only just curing in 90-150 DEG C of its solidification value.
The bounding force of conductive resin 3 is very high, and therefore its thickness, without too thick, only needs 0.05-0.2mm, lower than the thickness of traditional indium, indium alloy, has saved material, saves manufacturing cost.
Preferably, the thickness of conductive resin 3 is 0.05-0.2mm.
Preferably, conductive resin 3 comprises silver conductive adhesive, copper conductive adhesive or aluminium conductive resin.
Preferably, the material of target 2 is the conductor materials such as alloy, pottery, graphite or silicon.
Preferably, bushing pipe 1 comprises the conductor material such as metallic substance, alloy material.
The first embodiment as shown in Figure 1, target 2 is directly socketed on bushing pipe 1 periphery, is conductive resin 3 on joint face.
The second embodiment as shown in Figures 2 and 3, bushing pipe 1 is threaded with target 2, and conductive resin 3 is distributed in thread joint face and is full of the thread pitch of bushing pipe 1 and target 2, is more conducive to improve electrical and thermal conductivity.Due to after bushing pipe 1 and target 2 be threaded connection, make the installation of target 2 very convenient, and in the time that target 2 will be exhausted and cannot continue to use, also easily from bushing pipe 1, separate to recycle, untapped target 2 also just can screw in bushing pipe 1 and use, bushing pipe 1 can be reused, greatly saved the loss of material, provide cost savings.
The above be the utility model preferred embodiment, it does not form the restriction to the utility model protection domain.
Claims (6)
1. a magnetron sputtering rotary target, it is characterized in that: the bushing pipe (1) and the fixedly sleeved target (2) rotating on bushing pipe (1) outer wall and with bushing pipe (1) that comprise tubulose, the joint face of described bushing pipe (1) and target (2) is provided with middle layer, and described middle layer is conductive resin (3).
2. magnetron sputtering rotary target according to claim 1, is characterized in that: the thickness of described conductive resin (3) is 0.05-0.2mm.
3. magnetron sputtering rotary target according to claim 1, is characterized in that: described conductive resin (3) comprises silver conductive adhesive, copper conductive adhesive or aluminium conductive resin.
4. magnetron sputtering rotary target according to claim 1, is characterized in that: the material of described target (2) is alloy, pottery, graphite or silicon.
5. magnetron sputtering rotary target according to claim 1, is characterized in that: described bushing pipe (1) is made up of conductive material.
6. according to the magnetron sputtering rotary target described in any one in claim 1 to 5, it is characterized in that: described bushing pipe (1) is threaded with target (2), described conductive resin (3) is distributed in thread joint face and is full of bushing pipe (1) and the thread pitch of target (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420062629.4U CN203741407U (en) | 2014-02-11 | 2014-02-11 | Magnetron sputtering rotating target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420062629.4U CN203741407U (en) | 2014-02-11 | 2014-02-11 | Magnetron sputtering rotating target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203741407U true CN203741407U (en) | 2014-07-30 |
Family
ID=51341231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420062629.4U Expired - Lifetime CN203741407U (en) | 2014-02-11 | 2014-02-11 | Magnetron sputtering rotating target |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203741407U (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105463392A (en) * | 2015-12-03 | 2016-04-06 | 江阴恩特莱特镀膜科技有限公司 | Combined type rotation silver target material |
| CN106766869A (en) * | 2017-01-04 | 2017-05-31 | 青岛蓝光晶科新材料有限公司 | A kind of new target furnace apparatus and target bonding method |
| CN107663630A (en) * | 2016-07-29 | 2018-02-06 | 欧美达应用材料科技股份有限公司 | Rotary target material |
| CN108411261A (en) * | 2018-05-31 | 2018-08-17 | 米亚索乐装备集成（福建）有限公司 | A kind of target processing method and a kind of bone shape target |
| CN109628899A (en) * | 2019-01-24 | 2019-04-16 | 苏州罗纳尔材料科技有限公司 | Rotate zinc-magnesium target and preparation method thereof |
| CN110684955A (en) * | 2019-11-11 | 2020-01-14 | 北京航大微纳科技有限公司 | Vertical binding structure and binding method of rotary target |
| CN110846627A (en) * | 2019-11-14 | 2020-02-28 | 张俊杰 | Cold binding process for rotary target material |
| CN111593306A (en) * | 2020-06-03 | 2020-08-28 | 福建阿石创新材料股份有限公司 | End-reinforced rotary target and preparation method thereof |
| CN111926296A (en) * | 2020-07-15 | 2020-11-13 | 先导薄膜材料（广东）有限公司 | Rotary target binding method |
-
2014
- 2014-02-11 CN CN201420062629.4U patent/CN203741407U/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105463392A (en) * | 2015-12-03 | 2016-04-06 | 江阴恩特莱特镀膜科技有限公司 | Combined type rotation silver target material |
| CN107663630A (en) * | 2016-07-29 | 2018-02-06 | 欧美达应用材料科技股份有限公司 | Rotary target material |
| CN106766869A (en) * | 2017-01-04 | 2017-05-31 | 青岛蓝光晶科新材料有限公司 | A kind of new target furnace apparatus and target bonding method |
| CN108411261A (en) * | 2018-05-31 | 2018-08-17 | 米亚索乐装备集成（福建）有限公司 | A kind of target processing method and a kind of bone shape target |
| CN109628899A (en) * | 2019-01-24 | 2019-04-16 | 苏州罗纳尔材料科技有限公司 | Rotate zinc-magnesium target and preparation method thereof |
| CN110684955A (en) * | 2019-11-11 | 2020-01-14 | 北京航大微纳科技有限公司 | Vertical binding structure and binding method of rotary target |
| CN110684955B (en) * | 2019-11-11 | 2024-03-15 | 北京东方鼎鑫科技有限公司 | Vertical binding structure and binding method for rotary target |
| CN110846627A (en) * | 2019-11-14 | 2020-02-28 | 张俊杰 | Cold binding process for rotary target material |
| CN111593306A (en) * | 2020-06-03 | 2020-08-28 | 福建阿石创新材料股份有限公司 | End-reinforced rotary target and preparation method thereof |
| CN111926296A (en) * | 2020-07-15 | 2020-11-13 | 先导薄膜材料（广东）有限公司 | Rotary target binding method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140730 |