CN203719813U - SOI absolute pressure sensitive device employing no-leading-wire packaging structure - Google Patents
SOI absolute pressure sensitive device employing no-leading-wire packaging structure Download PDFInfo
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- CN203719813U CN203719813U CN201420051750.7U CN201420051750U CN203719813U CN 203719813 U CN203719813 U CN 203719813U CN 201420051750 U CN201420051750 U CN 201420051750U CN 203719813 U CN203719813 U CN 203719813U
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- wire
- insulating material
- lead
- solid insulating
- soi
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Abstract
Provided is an SOI absolute pressure sensitive device employing a no-leading-wire packaging structure. The utility model relates to a pressure sensitive device employing a no-leading-wire packaging structure, and problems that in the prior art, silicone oil easily leaks in high temperature and high voltage, a metal leading wire easily fractures, an electrode system has key separation and failure, and the device is influenced by thermal stress are solved. According to the SOI absolute pressure sensitive device employing the no-leading-wire packaging structure, a solid insulating material is fixed on a tube seat via a metallization layer and solder, the external surface of the solid insulating material in the direction of a leading wire penetrating through the tube seat downwardly is provided with a sealing ring, the external surface of the solid insulating material in the direction of penetrating through the tube seat upwardly is provided with a plurality of layers of composite materials, glass-metal composite materials and a borosilicate glass base, the top of the leading wire is provided with a metal electrode, and the upper surface of the metal electrode is a chip.
Description
Technical field
The utility model relates to the pressure-sensitive component that adopts leadless packaging structure.
Background technology
Existing SOI absolute pressure Sensitive Apparatus mainly contains two kinds of packaged types, a kind of is to adopt SOI silicon-sensitive chip front side as pressure-sensitive face, the high and low pressure force signal that exocoel in it is formed is responsive, exports strain proportional to pressure differential, forms positive and negative two strain regions; Simultaneously material is due to piezoresistive effect, and corresponding variation will occur its resistivity, sensitive chip will export one to the voltage signal being directly proportional by measuring pressure, by measuring the size of this voltage signal, can realize pressure force measurement; This packaged type needs lead-in wire (spun gold, Si-Al wire) that the electrode of SOI silicon-sensitive chip front side and supporting construction (shell) electrode are formed to electrical connection by methods such as ultrasonic wire bondings, need (silicone oil) and measured medium isolation, to guarantee insulating property and to avoid electrode corrosion, oxidation simultaneously.The internal reference chamber of this mode forms by monocrystalline silicon and the encapsulation of 7740 glass static of SOI silicon-sensitive chip back; By the modes such as bonding, sintering and base, realize supporting construction.This glass envelope oil-filled type pressure-sensitive component of shell silicone oil under high pressure, high temperature is easily revealed, easy fracture and applied at elevated temperature exist the problems such as the de-key inefficacy of Au-Al electrode system under metal lead wire strong vibration condition.
A kind of is to adopt SOI silicon-sensitive chip back as pressure-sensitive face, and principle of work as hereinbefore; Chip back pressure-sensitive form, chip back can directly contact measured medium on the one hand, does not need other insulation package, has improved the dynamic indicator of sensor; Avoid on the other hand graphics chip contact measured medium, pollute, meet resistant to elevated temperatures requirement simultaneously; Adopt chip front side and glass pedestal electrostatic sealing-in, and in glass pedestal, utilize micro-machined method to make outer lead encapsulated holes and reference pressure cavity configuration; Together with the shell burn-back of the glass pedestal of sensitive chip and glass-encapsulated, the outer lead on glass-encapsulated shell is also sintered together with metallic glass slurry with the electrode of chip simultaneously, formation sensitive element.This pressure-sensitive component has an advantage operating temperature range, anti-overload ability, anti-vibrating and impact ability etc. are technical, a kind of shortcoming of packaged type before having solved, but soi chip is very responsive to the external force acting on film.Device is mainly subject to the impact of thermal and mechanical stress, the material (SiO in chip adhesive structure
2), backing material do not mate and causes with the thermal expansivity (CTE) of jointing material, thermal stress may cause device under thermal environment, to make abnormal reaction, under extreme case, also can cause permanent mechanical damage to chip adhesive structure.
Utility model content
The purpose of this utility model is to provide a kind of SOI absolute pressure Sensitive Apparatus that adopts leadless packaging structure.To solve prior art or to exist high temperature and high pressure to use silicone oil easily to reveal, easy fracture under metal lead wire strong vibration condition, the de-key of electrode system lost efficacy, or had the be heated problem of stress influence of absolute pressure Sensitive Apparatus.
A kind of SOI absolute pressure Sensitive Apparatus that adopts leadless packaging structure, it comprises lead-in wire, metal layer, sealing ring, scolder, solid insulating material, transition bed, base, multilayer materials, glass-metal composite, Pyrex pedestal, metal electrode and chip, solid insulating material is fixed on base, the joint face of solid insulating material and base is provided with metal layer, solid insulating material and metal layer are integral by high temperature sintering, agglomeration by scolder between metal layer and base forms transition bed, lead-in wire runs through solid insulating material, the solid insulating material outer surface that lead-in wire passes base direction is downwards provided with sealing ring, between sealing ring and solid insulating material, by scolder, be sintered into one, lead-in wire is sintered into one by scolder with the bore area of sealing ring, the solid insulating material outer surface that lead-in wire upwards passes base direction is provided with multilayer materials, glass-metal composite and Pyrex pedestal, the guide-wire tip that upwards passes base direction is provided with metal electrode, the lower surface of metal electrode is sintered into one by glass-metal composite with lead-in wire, the upper surface of metal electrode and the lower surface of chip fit, the outside surface of glass-metal composite arranges Pyrex pedestal, Pyrex pedestal outside surface arranges multilayer materials, the lower surface of chip and Pyrex pedestal electrostatic sealing-in, four inner side facades of four outer side elevations of Pyrex pedestal and multilayer materials are sintered into one, the bottom surface of multilayer materials and the upper surface of solid insulating material are sintered into one.
The beneficial effects of the utility model are: 1, compare as the Sensitive Apparatus of pressure-sensitive face, glass header encapsulation with adopting SOI silicon-sensitive chip back, the SOI absolute pressure Sensitive Apparatus of leadless packaging structure has been realized the hermetically-sealed construction sintering with different qualities Can by ceramic high temperature sintering tungsten layer and nickel, Ag-Cu scolder as transition material, between Pyrex and the pottery of base sintering, take compound glass section bar, made the coefficient of thermal expansion differences between each transition interface be less than (5 * l0
-7k
-1), make stress distribution more reasonable, improve the high-temperature resistance of product, and greatly improved integrally-built stability, make product be able to work under compared with rugged environment condition; 2, the ceramic dielectric constant of sintering less (general ε≤10) on base, there is very good high frequency characteristics and there is good heat conductivity, be applicable to high-frequency design, in applications such as Aeronautics and Astronautics, radar, wireless telecommunications, photoelectron, MEMS, there is unique technical advantage, improved electrical isolation, sealing and the withstand voltage properties of pressure-sensitive component under hot conditions, the matching of encapsulating material and the process rationality of structure have reduced the level of unrelieved stress, have finally improved property and the reliability of Sensitive Apparatus.3, the SOI absolute pressure Sensitive Apparatus of leadless packaging structure have that volume is little, lightweight, anti-overload ability is strong, the feature such as high temperature resistant, anti-vibration, precision are high, anti-adverse environment, there is higher stability and reliability, and there is the assembling of being easy to, can be mass.
The utility model is for a kind of SOI absolute pressure Sensitive Apparatus that adopts leadless packaging structure.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation that adopts the SOI absolute pressure Sensitive Apparatus of leadless packaging structure of the utility model.
Embodiment
Technical solution of the present invention is not limited to following cited embodiment, also comprises the combination in any between each embodiment.
Embodiment one: illustrate present embodiment below in conjunction with Fig. 1.A kind of SOI absolute pressure Sensitive Apparatus that adopts leadless packaging structure of present embodiment, it comprises lead-in wire 1, metal layer 2, sealing ring 3, scolder 4, solid insulating material 5, transition bed 6, base 7, multilayer materials 8, glass-metal composite 9, Pyrex pedestal 10, metal electrode 11 and chip 12, solid insulating material 5 is fixed on base 7, solid insulating material 5 is provided with metal layer 2 with the joint face of base 7, solid insulating material 5 is integral by high temperature sintering with metal layer 2, agglomeration by scolder 4 between metal layer 2 and base 7 forms transition bed 6, lead-in wire 1 runs through solid insulating material 5, lead-in wire 1 solid insulating material 5 outer surface that pass base 7 directions are downwards provided with sealing ring 3, between sealing ring 3 and solid insulating material 5, by scolder 4, be sintered into one, lead-in wire 1 is sintered into one by scolder 4 with the bore area of sealing ring 3, lead-in wire 1 solid insulating material 5 outer surface that upwards pass base 7 directions are provided with multilayer materials 8, glass-metal composite 9 and Pyrex pedestal 10, lead-in wire 1 top that upwards passes base 7 directions is provided with metal electrode 11, the lower surface of metal electrode 11 is sintered into one by glass-metal composite 9 with lead-in wire 1, the lower surface of the upper surface of metal electrode 11 and chip 12 fits, the outside surface of glass-metal composite 9 arranges Pyrex pedestal 10, Pyrex pedestal 10 outside surfaces arrange multilayer materials 8, the lower surface of chip 12 and Pyrex pedestal 10 electrostatic sealing-ins, four inner side facades of four outer side elevations of Pyrex pedestal 10 and multilayer materials 8 are sintered into one, the upper surface of the bottom surface of multilayer materials 8 and solid insulating material 5 is sintered into one.
Present embodiment adopts silicon piezoresistive effect principle, makes force sensing resistance and form Wheatstone bridge on soi chip 12, and stress sensitive film is corroded and forms at chip 12 back sides; Chip 12 is positive forms reference pressure chamber and stress isolation structure with Pyrex pedestal 10 by electrostatic sealing-in, and the complex fire resistant electrode layer on silicon chip is manifested by the prefabricated through hole in glass pedestal; Chip 12 is realized hermetically-sealed construction with Pyrex pedestal 10 by electrostatic sealing-in, then by multilayer materials 8 and solid insulating material 5 sintering, forms solid-state hermetically-sealed construction, has improved natural frequency and the stability of Sensitive Apparatus; Metal electrode 11 is sintered into one and is formed electrical interconnection network by glass-metal composite 9 with lead-in wire 1, realize the metal electrode 11 of chip 12 and being connected of lead-in wire 1, thereby being rigidly connected of chip 12 signals and extraneous electrical connection, chip 12 structures and high pressure resistant, the close encapsulating package of High Temperature Gas, thereby form Sensitive Apparatus; Sensitive Apparatus is connected with cable with metal mounting structure by welding methods such as electron beam, argon arc weldings, is packaged into the pressure transducer without internal lead.It has that volume is little, lightweight, anti-overload ability is strong, high temperature resistant, anti-vibration, the feature such as reliability is high, precision is high, anti-adverse environment.
Embodiment two: present embodiment is different from embodiment one: described solid insulating material 5 is Al
2o
3, SiC, BeO, TiO
2, ZrO
2, MgO, AlN, Si
3n
4or the potpourri of BN and above-mentioned all material thereof.Other is identical with embodiment one.
Specific inductive capacity less (general ε≤10) when the solid insulating material 5 of sintering is pottery on present embodiment base 7, there is very good high frequency characteristics and there is good heat conductivity, be applicable to high-frequency design, in applications such as Aeronautics and Astronautics, radar, wireless telecommunications, photoelectron, MEMS, there is unique technical advantage.
Thermal expansivity (7.0 * the l0 of solid insulating material 5 potteries of sintering on Pyrex pedestal 10 and base 7
-6k
-1) differing larger, the thermal stress causing for fear of temperature variation has been taked multilayer materials 8 between Pyrex pedestal 10 and the solid insulating material pottery 5 of base 7 sintering, makes the coefficient of thermal expansion differences between each transition interface be less than (5 * l0
-7k
-1), make stress distribution more reasonable, improve the high-temperature resistance of product, and greatly improved integrally-built stability, make product be able to work under compared with rugged environment condition.
Embodiment three: present embodiment is different from one of embodiment one or two: the material of described base 7 for can cut down, stainless steel, tantalum or Inconel625 alloy.Other is identical with embodiment one or two.
Embodiment four: present embodiment is different from one of embodiment one to three: the material of described metal layer 2 comprises the potpourri of tungsten or molybdenum and above-mentioned all material thereof.Other is identical with embodiment one to three.
Present embodiment, in order to realize and being tightly connected of base 7, needs at high temperature sintering metal layer 2 tungsten layer to form transition beds 6.
Embodiment five: what present embodiment was different from one of embodiment one to four is that described scolder 4 is nickel or Ag-Cu.Other is identical with embodiment one to four.
Present embodiment also sinters hermetically-sealed construction by nickel, Ag-Cu scolder 4 into as the metal base 7 of transition material and different qualities, realizes the support of sensitive chip, protection, electrical interconnection function.
Embodiment six: present embodiment is different from one of embodiment one to five: described chip 12 is soi chip, and soi chip center is silicon-sensitive film; Described metal electrode 11 is Pt
5si
2tetra-layers of metal construction conducting system of-Ti-Pt-Au.Other is identical with embodiment one to five.
The silicon-sensitive film at present embodiment chip 12 centers is as stress sensitive parts, when being subject to external pressure, can produce displacement, and by the Wheatstone bridge forming in inside, utilize piezoresistive effect that pressure signal is converted into electric signal, by chip 12 internal electrodes, nano silver-group low temperature glass agglomerated material, ceramic package base electrode, output to back-end system; Silicon-sensitive film and the Pyrex pedestal 10 of chip 12 form hermetically-sealed construction by electrostatic sealing-in, and Pyrex pedestal 10 centres process groove, under vacuum environment, form reference pressure chamber with the silicon-sensitive film of soi chip; Thermal expansivity (2.85 * the l0 of Pyrex pedestal 10 (Pyrex7740)
-6k
-1) and silicon (2.62 * l0
-6k
-1) close, the thermal stress that temperature variation causes is little, and Pyrex pedestal 10 is optimal with the sealing-in of the silicon-sensitive film of chip 12.
Embodiment seven: present embodiment is different from one of embodiment one to six: the nano-noble metal base low temperature glass agglomerated material that described glass-metal composite 9 is conical structure, sintering temperature is 420 ℃～650 ℃; Described glass is silicate, borosilicate, phosphate, zinc borosilicate, soda-lime glass, lead silicate or lead borate zinc; Described metal is gold, silver, palladium or platinum.Other is identical with embodiment one to six.
Embodiment eight: present embodiment is different from one of embodiment one to seven: solid insulating material 5 and metal layer 2 high temperature sintering under vacuum environment; Lead-in wire 1, sealing ring 3, base 7 are at junction electroless nickel layer; Lead-in wire 1, sealing ring 3, base 7 pass through scolder 4 sintering under protective atmosphere with solid insulating material; Four inner side facades of four outer side elevations of Pyrex pedestal 10 and multilayer materials 8 are sintered into one at low temperatures, and the upper surface of the bottom surface of multilayer materials 8 and solid insulating material 5 is sintered into one at low temperatures; The lower surface of metal electrode 11 is sintered into one by glass-metal composite 9 at low temperatures with lead-in wire 1.Other is identical with embodiment one to seven.
Embodiment nine: present embodiment is different from one of embodiment one to eight: the material of lead-in wire 1, sealing ring 3 is kovar alloy, and its model is 4J29.Other is identical with embodiment one to eight.
Claims (7)
1. a SOI absolute pressure Sensitive Apparatus that adopts leadless packaging structure, it is characterized in that it comprises lead-in wire (1), metal layer (2), sealing ring (3), scolder (4), solid insulating material (5), transition bed (6), base (7), multilayer materials (8), glass-metal composite (9), Pyrex pedestal (10), metal electrode (11) and chip (12), solid insulating material (5) is fixed on base (7), solid insulating material (5) is provided with metal layer (2) with the joint face of base (7), solid insulating material (5) is integral by high temperature sintering with metal layer (2), agglomeration by scolder (4) between metal layer (2) and base (7) forms transition bed (6), lead-in wire (1) runs through solid insulating material (5), solid insulating material (5) outer surface that lead-in wire (1) passes base (7) direction is downwards provided with sealing ring (3), between sealing ring (3) and solid insulating material (5), by scolder (4), be sintered into one, lead-in wire (1) is sintered into one by scolder (4) with the bore area of sealing ring (3), solid insulating material (5) outer surface that lead-in wire (1) upwards passes base (7) direction is provided with multilayer materials (8), glass-metal composite (9) and Pyrex pedestal (10), lead-in wire (1) top that upwards passes base (7) direction is provided with metal electrode (11), the lower surface of metal electrode (11) and lead-in wire (1) are sintered into one by glass-metal composite (9), the lower surface of the upper surface of metal electrode (11) and chip (12) fits, the outside surface of glass-metal composite (9) arranges Pyrex pedestal (10), Pyrex pedestal (10) outside surface arranges multilayer materials (8), the lower surface of chip (12) and Pyrex pedestal (10) electrostatic sealing-in, four inner side facades of four outer side elevations of Pyrex pedestal (10) and multilayer materials (8) are sintered into one, the upper surface of the bottom surface of multilayer materials (8) and solid insulating material (5) is sintered into one.
2. a kind of SOI absolute pressure Sensitive Apparatus that adopts leadless packaging structure according to claim 1, the material that it is characterized in that described base (7) for can cut down, stainless steel, tantalum or Inconel625 alloy.
3. a kind of SOI absolute pressure Sensitive Apparatus that adopts leadless packaging structure according to claim 1, is characterized in that described scolder (4) is nickel or Ag-Cu.
4. a kind of SOI absolute pressure Sensitive Apparatus that adopts leadless packaging structure according to claim 1, is characterized in that described chip (12) is soi chip, and soi chip center is silicon-sensitive film; Described metal electrode (11) is Pt
5si
2tetra-layers of metal construction conducting system of-Ti-Pt-Au.
5. a kind of SOI absolute pressure Sensitive Apparatus that adopts leadless packaging structure according to claim 1, is characterized in that described glass is silicate, borosilicate, phosphate, zinc borosilicate, soda-lime glass, lead silicate or lead borate zinc; Described metal is gold, silver, palladium or platinum.
6. a kind of SOI absolute pressure Sensitive Apparatus that adopts leadless packaging structure according to claim 1, is characterized in that solid insulating material (5) and metal layer (2) high temperature sintering under vacuum environment; Lead-in wire (1), sealing ring (3), base (7) are at junction electroless nickel layer; Lead-in wire (1), sealing ring (3), base (7) pass through scolder (4) sintering under protective atmosphere with solid insulating material; Four inner side facades of four outer side elevations of Pyrex pedestal (10) and multilayer materials (8) are sintered into one at low temperatures, and the upper surface of the bottom surface of multilayer materials (8) and solid insulating material (5) is sintered into one at low temperatures; The lower surface of metal electrode (11) and lead-in wire (1) are sintered into one at low temperatures by glass-metal composite (9).
7. a kind of SOI absolute pressure Sensitive Apparatus that adopts leadless packaging structure according to claim 1, is characterized in that the material of lead-in wire (1), sealing ring (3) is kovar alloy, and its model is 4J29.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420051750.7U CN203719813U (en) | 2014-01-27 | 2014-01-27 | SOI absolute pressure sensitive device employing no-leading-wire packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420051750.7U CN203719813U (en) | 2014-01-27 | 2014-01-27 | SOI absolute pressure sensitive device employing no-leading-wire packaging structure |
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| Publication Number | Publication Date |
|---|---|
| CN203719813U true CN203719813U (en) | 2014-07-16 |
Family
ID=51158952
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|---|---|---|---|
| CN201420051750.7U Withdrawn - After Issue CN203719813U (en) | 2014-01-27 | 2014-01-27 | SOI absolute pressure sensitive device employing no-leading-wire packaging structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103759880A (en) * | 2014-01-27 | 2014-04-30 | 中国电子科技集团公司第四十九研究所 | Leadless packaging structure and SOI absolute pressure sensitive device of leadless packaging structure |
| CN104625634A (en) * | 2014-12-30 | 2015-05-20 | 江苏安德信超导加速器科技有限公司 | Feedthrough processing and welding process |
| CN109540374A (en) * | 2019-01-10 | 2019-03-29 | 中南大学 | Ultrasound sintering packaging system |
| CN113624368A (en) * | 2021-06-22 | 2021-11-09 | 成都凯天电子股份有限公司 | High-temperature-resistant oil-filled SOI pressure sensor |
-
2014
- 2014-01-27 CN CN201420051750.7U patent/CN203719813U/en not_active Withdrawn - After Issue
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103759880A (en) * | 2014-01-27 | 2014-04-30 | 中国电子科技集团公司第四十九研究所 | Leadless packaging structure and SOI absolute pressure sensitive device of leadless packaging structure |
| CN103759880B (en) * | 2014-01-27 | 2016-03-02 | 中国电子科技集团公司第四十九研究所 | A kind of SOI absolute pressure Sensitive Apparatus adopting leadless packaging structure |
| CN104625634A (en) * | 2014-12-30 | 2015-05-20 | 江苏安德信超导加速器科技有限公司 | Feedthrough processing and welding process |
| CN109540374A (en) * | 2019-01-10 | 2019-03-29 | 中南大学 | Ultrasound sintering packaging system |
| CN109540374B (en) * | 2019-01-10 | 2024-03-15 | 中南大学 | Ultrasonic sintering packaging device |
| CN113624368A (en) * | 2021-06-22 | 2021-11-09 | 成都凯天电子股份有限公司 | High-temperature-resistant oil-filled SOI pressure sensor |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20140716 Effective date of abandoning: 20160302 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |