CN203351631U - N-type hydrogen-doped crystalline silicon passivated heterojunction solar cell - Google Patents
N-type hydrogen-doped crystalline silicon passivated heterojunction solar cell Download PDFInfo
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- CN203351631U CN203351631U CN201320226137XU CN201320226137U CN203351631U CN 203351631 U CN203351631 U CN 203351631U CN 201320226137X U CN201320226137X U CN 201320226137XU CN 201320226137 U CN201320226137 U CN 201320226137U CN 203351631 U CN203351631 U CN 203351631U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The utility model discloses an N-type hydrogen-doped crystalline silicon passivated heterojunction solar cell, wherein an intrinsic noncrystalline silicon passivated layer is deposited on the front surface of an N-type crystallized silicon substrate; a heavily doped P-type noncrystalline silicon layer is deposited on the upper surface of the intrinsic noncrystalline silicon passivated layer; a front transparent conductive film layer is deposited on the upper surface of the heavily doped P-type noncrystalline silicon layer; a front electrode layer is positioned on the upper surface of the front transparent conductive film layer, and is electrically connected with the heavily doped P-type noncrystalline silicon layer through the front transparent conductive film layer; an N-type hydrogen-doped crystallized silicon layer is deposited on the back of the N-type crystallized silicon substrate; a heavily doped N-type noncrystalline silicon layer is deposited on the lower surface of the N-type hydrogen-doped crystallized silicon layer; a back transparent conductive film layer is deposited on the lower surface of the heavily doped N-type noncrystalline silicon layer; and a back electrode layer is positioned on the lower surface of the back transparent conductive film layer, and is electrically connected with the heavily doped N-type noncrystalline silicon layer through the back transparent conductive film layer. The N-type hydrogen-doped crystalline silicon passivated heterojunction solar cell can reduce the whole series resistance of the solar cell so that the fill factors can be improved and the conversion efficiency of the solar cell can be improved.
Description
Technical field
The utility model relates to the heterojunction solar battery device that a kind of N-type is mixed the passivation of hydrogen Crystallized Silicon, belongs to the heterojunction solar battery technical field.
Background technology
At present, using the N-type crystalline silicon as substrate, form the hetero-junction solar cell device, what generally use is amorphous silicon membrane (a-Si:H) passivation crystalline silicon (substrate) surface of Intrinsical (intrinsic), the n+-a-Si:H that simultaneously adds doping forms back surface field (BSF), but because the resistivity of plain intrinsic amorphous silicon thin-film material is larger, so series resistance is larger, fill factor, curve factor FF is lower, and battery conversion efficiency is not high.
Summary of the invention
Technical problem to be solved in the utility model is the defect that overcomes prior art, provide a kind of N-type to mix the heterojunction solar battery device of hydrogen Crystallized Silicon passivation, it can reduce the whole series resistance of solar cell, and then can improve fill factor, curve factor, thereby improve the conversion efficiency of solar cell.
In order to solve the problems of the technologies described above, the technical solution of the utility model is: a kind of N-type is mixed the heterojunction solar battery device of hydrogen Crystallized Silicon passivation, it comprises that N-type crystalline silicon substrate, intrinsic amorphous silicon passivation layer, heavy doping P type amorphous silicon layer, front transparent conductive film layer, front electrode layer, N-type mix hydrogen crystallized silicon layer, heavy doping N-type amorphous silicon layer, back side transparent conductive film layer and backplate layer, and the N-type crystalline silicon substrate has a positive and back side; The intrinsic amorphous silicon passivation layer deposition is on the front of N-type crystalline silicon substrate; Heavy doping P type amorphous silicon layer is deposited on the upper surface of intrinsic amorphous silicon passivation layer; The front nesa coating is deposited upon on the upper surface of heavy doping P type amorphous silicon layer; The front electrode layer is positioned on the upper surface of front transparent conductive film layer, and is electrically connected by this front transparent conductive film layer and heavy doping P type amorphous silicon layer; N-type is mixed the hydrogen crystallized silicon layer and is deposited on the back side of N-type crystalline silicon substrate; Heavy doping N-type amorphous silicon layer is deposited on N-type and mixes on the lower surface of hydrogen crystallized silicon layer; Back side nesa coating is deposited upon on the lower surface of heavy doping N-type amorphous silicon layer; The backplate layer is positioned on the lower surface of back side transparent conductive film layer, and is electrically connected by this back side transparent conductive film layer and heavy doping N-type amorphous silicon layer.
Further, described front transparent conductive film layer and/or back side transparent conductive film layer are silver-colored grid.
Further, described front transparent conductive film layer and/or back side transparent conductive film layer are ito thin film.
Further, the thickness of described N-type crystalline silicon substrate is 90 ~ 300 microns.
Further, the thickness of described intrinsic amorphous silicon passivation layer is 3 ~ 10 nanometers.
Further, the thickness of described heavy doping P type amorphous silicon layer is 10 ~ 20 nanometers.
Further, the thickness of described front transparent conductive film layer is 60 ~ 90 nanometers.
Further, to mix the thickness of hydrogen crystallized silicon layer be 3 ~ 15 nanometers to described N-type.
Further, the thickness of described heavy doping N-type amorphous silicon layer is 10 ~ 30 nanometers.
Further, the thickness of described back side transparent conductive film layer is 80 ~ 150 nanometers.
After having adopted technique scheme, the utlity model has following beneficial effect:
1, N-type is mixed hydrogen crystallized silicon layer (n-c-Si:H), due to the existence of doped with hydrogen atom, can the passivation silicon chip surface, thus keep passivation effect preferably to obtain hetero-junction solar cell high open circuit voltage (Voc).
2, mix in the hydrogen crystallized silicon layer and mixed phosphorus atoms due to N-type, cause the resistance of this passivation layer to reduce, can reduce the series resistance of whole solar cell, improve fill factor, curve factor FF, promote the conversion efficiency of hetero-junction solar cell.
3, it is basically identical that N-type is mixed growth technique and the conventional PECVD deposition n-a-Si:H of hydrogen crystallized silicon layer, only needs to adjust the gas mixing ratio of hydrogen and silane, do not increase operation, additionally do not increase cost, and technique is simple.
The accompanying drawing explanation
Fig. 1 is the structural representation that N-type of the present utility model is mixed the heterojunction solar battery device of hydrogen Crystallized Silicon passivation;
Fig. 2 is the fabrication processing figure that N-type is mixed the heterojunction solar battery device of hydrogen Crystallized Silicon passivation.
Embodiment
For content of the present utility model more easily is expressly understood, below according to specific embodiment also by reference to the accompanying drawings, the utility model is described in further detail,
As shown in Figure 1, a kind of N-type is mixed the heterojunction solar battery device of hydrogen Crystallized Silicon passivation, it comprises that N-type crystalline silicon substrate 1, intrinsic amorphous silicon passivation layer 2, heavy doping P type amorphous silicon layer 3, front transparent conductive film layer 4, front electrode layer 5, N-type mix hydrogen crystallized silicon layer 6, heavy doping N-type amorphous silicon layer 7, back side transparent conductive film layer 8 and backplate layer 9, and it has a positive and back side N-type crystalline silicon substrate 1; Intrinsic amorphous silicon passivation layer 2 is deposited on the front of N-type crystalline silicon substrate 1; Heavy doping P type amorphous silicon layer 3 is deposited on the upper surface of intrinsic amorphous silicon passivation layer 2; Front transparent conductive film layer 4 is deposited on the upper surface of heavy doping P type amorphous silicon layer 3; Front electrode layer 5 is positioned on the upper surface of front transparent conductive film layer 4, and is electrically connected by this front transparent conductive film layer 4 and heavy doping P type amorphous silicon layer 3; N-type is mixed hydrogen crystallized silicon layer 6 and is deposited on the back side of N-type crystalline silicon substrate 1; Heavy doping N-type amorphous silicon layer 7 is deposited on N-type and mixes on the lower surface of hydrogen crystallized silicon layer 6; Back side transparent conductive film layer 8 is deposited on the lower surface of heavy doping N-type amorphous silicon layer 7; Backplate layer 9 is positioned on the lower surface of back side transparent conductive film layer 8, and is electrically connected by this back side transparent conductive film layer 8 and heavy doping N-type amorphous silicon layer 7.
Front transparent conductive film layer 4 and/or back side transparent conductive film layer 8 are ito thin film.
The thickness of N-type crystalline silicon substrate 1 is 90 ~ 300 microns.
The thickness of intrinsic amorphous silicon passivation layer 2 is 3 ~ 10 nanometers.
The thickness of heavy doping P type amorphous silicon layer 3 is 10 ~ 20 nanometers.
The thickness of front transparent conductive film layer 4 is 60 ~ 90 nanometers.
The thickness that N-type is mixed hydrogen crystallized silicon layer 6 is 3 ~ 15 nanometers.
The thickness of heavy doping N-type amorphous silicon layer 7 is 10 ~ 30 nanometers.
The thickness of back side transparent conductive film layer 8 is 80 ~ 150 nanometers.
Operation principle of the present utility model is as follows:
The aluminum back surface field of hetero-junction solar cell is partly N-type crystalline silicon substrate 1(n-c-Si) and heavy doping N-type amorphous silicon layer 7(n+-a-Si:H) between, insert one deck N-type and mix hydrogen crystallized silicon layer 6(n-c-Si:H) as backside passivation layer, N-type in this hetero-junction solar cell device architecture is mixed the existence of hydrogen crystallized silicon layer 6 due to the hydrogen atom of doping, can the passivation silicon chip surface, thus keep passivation effect preferably to obtain hetero-junction solar cell high open circuit voltage (Voc); In addition, due to N-type, mix in hydrogen crystallized silicon layer 6 and mixed phosphorus atoms, cause the resistance of backside passivation layer to reduce, thereby can reduce whole solar cell series resistance, improve fill factor, curve factor FF, realize the lifting of heterojunction solar cell conversion efficiency.
A kind of fabrication processing of this heterojunction solar battery device is as follows:
Adopt thickness approximately the N-type crystalline silicon of 200 microns through RCA cleaning, making herbs into wool and the hydrofluoric acid treatment of standard, front in N-type crystalline silicon substrate 1 deposits one deck intrinsic amorphous silicon passivation layer 2 by pecvd process, the about 3-10nm of thickness, passivation N-type crystalline silicon substrate surface, reduce recombination-rate surface, obtain good interfacial characteristics; Deposit again one deck heavy doping P type amorphous silicon layer 3, thickness is 10-20nm, deposit N-type at the back side of N-type crystalline silicon substrate 1 by pecvd process again and mix hydrogen crystallized silicon layer 6, typical thickness is 3-15nm, finally deposit one deck heavy doping N-type amorphous silicon layer 7 (n-a-Si:H), thickness is 10-30nm.After the aforementioned body battery structure completes, by methods such as sputter or evaporations, upper and lower surface at said structure adopts ito thin film to deposit respectively front transparent conductive film layer 7 and back side transparent conductive film layer 8, use again the low-temperature silver slurry in the upper and lower surface silk screen printing, obtain silver-colored grid through low temperature sintering technology, complete the making of this hetero-junction solar cell.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (10)
1. a N-type is mixed the heterojunction solar battery device of hydrogen Crystallized Silicon passivation, it is characterized in that, it comprises:
One N-type crystalline silicon substrate (1), it has a positive and back side;
One intrinsic amorphous silicon passivation layer (2), be deposited on the front of N-type crystalline silicon substrate (1);
One heavy doping P type amorphous silicon layer (3), be deposited on the upper surface of intrinsic amorphous silicon passivation layer (2);
One front transparent conductive film layer (4), be deposited on the upper surface of heavy doping P type amorphous silicon layer (3);
One front electrode layer (5), be positioned on the upper surface of front transparent conductive film layer (4), and be electrically connected by this front transparent conductive film layer (4) and heavy doping P type amorphous silicon layer (3);
One N-type is mixed hydrogen crystallized silicon layer (6), is deposited on the back side of N-type crystalline silicon substrate (1);
One heavy doping N-type amorphous silicon layer (7), be deposited on N-type and mix on the lower surface of hydrogen crystallized silicon layer (6);
One back side transparent conductive film layer (8), be deposited on the lower surface of heavy doping N-type amorphous silicon layer (7);
One backplate layer (9), be positioned on the lower surface of back side transparent conductive film layer (8), and be electrically connected by this back side transparent conductive film layer (8) and heavy doping N-type amorphous silicon layer (7).
2. N-type according to claim 1 is mixed the heterojunction solar battery device of hydrogen Crystallized Silicon passivation, it is characterized in that: described front electrode layer (5) and/or backplate layer (9) are silver-colored grid.
3. N-type according to claim 1 and 2 is mixed the heterojunction solar battery device of hydrogen Crystallized Silicon passivation, it is characterized in that: described front transparent conductive film layer (4) and/or back side transparent conductive film layer (8) are ito thin film.
4. N-type according to claim 1 is mixed the heterojunction solar battery device of hydrogen Crystallized Silicon passivation, it is characterized in that: the thickness of described N-type crystalline silicon substrate (1) is 90 ~ 300 microns.
5. N-type according to claim 1 is mixed the heterojunction solar battery device of hydrogen Crystallized Silicon passivation, it is characterized in that: the thickness of described intrinsic amorphous silicon passivation layer (2) is 3 ~ 10 nanometers.
6. N-type according to claim 1 is mixed the heterojunction solar battery device of hydrogen Crystallized Silicon passivation, it is characterized in that: the thickness of described heavy doping P type amorphous silicon layer (3) is 10 ~ 20 nanometers.
7. N-type according to claim 1 is mixed the heterojunction solar battery device of hydrogen Crystallized Silicon passivation, it is characterized in that: the thickness of described front transparent conductive film layer (4) is 60 ~ 90 nanometers.
8. N-type according to claim 1 is mixed the heterojunction solar battery device of hydrogen Crystallized Silicon passivation, it is characterized in that: the thickness that described N-type is mixed hydrogen crystallized silicon layer (6) is 3 ~ 15 nanometers.
9. N-type according to claim 1 is mixed the heterojunction solar battery device of hydrogen Crystallized Silicon passivation, it is characterized in that: the thickness of described heavy doping N-type amorphous silicon layer (7) is 10 ~ 30 nanometers.
10. N-type according to claim 1 is mixed the heterojunction solar battery device of hydrogen Crystallized Silicon passivation, it is characterized in that: the thickness of described back side transparent conductive film layer (8) is 80 ~ 150 nanometers.
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| CN201320226137XU CN203351631U (en) | 2013-04-28 | 2013-04-28 | N-type hydrogen-doped crystalline silicon passivated heterojunction solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199143A (en) * | 2013-04-28 | 2013-07-10 | 常州天合光能有限公司 | N-type hydrogen-doped crystalline silicon passivated heterojunction solar cell |
| CN103762276A (en) * | 2014-01-23 | 2014-04-30 | 常州天合光能有限公司 | Heterojunction solar cell and interfacing processing method and preparing technology thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199143A (en) * | 2013-04-28 | 2013-07-10 | 常州天合光能有限公司 | N-type hydrogen-doped crystalline silicon passivated heterojunction solar cell |
| CN103199143B (en) * | 2013-04-28 | 2016-06-29 | 常州天合光能有限公司 | The heterojunction solar battery device of N-type hydrogen-doped crystallized silicon passivated |
| CN103762276A (en) * | 2014-01-23 | 2014-04-30 | 常州天合光能有限公司 | Heterojunction solar cell and interfacing processing method and preparing technology thereof |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent of invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Bao Jian Inventor before: Bao Jian Inventor before: Yang Tongchun |
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| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: BAO JIAN YANG TONGCHUN TO: BAO JIAN |
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| CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| CP03 | Change of name, title or address |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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| CP03 | Change of name, title or address | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131218 Termination date: 20190428 |
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| CF01 | Termination of patent right due to non-payment of annual fee |