CN203269550U - Tower-type anchor of uncooled infrared detector - Google Patents
Tower-type anchor of uncooled infrared detector Download PDFInfo
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- CN203269550U CN203269550U CN 201320061460 CN201320061460U CN203269550U CN 203269550 U CN203269550 U CN 203269550U CN 201320061460 CN201320061460 CN 201320061460 CN 201320061460 U CN201320061460 U CN 201320061460U CN 203269550 U CN203269550 U CN 203269550U
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Abstract
The utility model relates to a tower-type anchor of an uncooled infrared detector, comprising an ASIC (application circuit integrated circuit), a polyimide sacrificial layer (3) and an electrode block (2) are arranged on the ASIC, an etching support hole (4-1) is etched on the polyimide sacrificial layer (3), a sputtering metal layer (4) is arranged on an wafer in which the etching support hole (4-1) is formed, a polyimide sacrificial layer (5) is arranged on the sacrificial layer (3), an etching support hole (6-1) is etched in the polyimide sacrificial layer (5), a sputtering metal layer (6) is arranged on an wafer in which the etching support hole (6-1) is formed, a support layer (7) is arranged on the metal layer (6), a thermal sensitive layer (8) is arranged on the support layer (7), a medium layer (9) is arranged on the thermal sensitive layer (8), a contact hole (11) is formed in the medium layer (9), a through hole (10) formed in the sputtering metal layer (6) is arranged in the support holes, an electrode metal layer (12) is arranged in the through hole (10) and the contact hole (11), and a passivation layer (13) is deposited after the electrode metal layer (12), and finally the sacrificial layer structures are released.
Description
Technical field
The utility model relates to MEMS designs and manufacturing field, is specially a kind of non-refrigerated infrared detector tower pier structure.
Background technology
Non-refrigerated infrared detector (Uncooled Infrared Detector) is widely used in the fields such as military affairs, automobile, security protection, biomedicine, electric power, aviation, police, forest fire protection and Internet of Things.In recent years, the non-refrigeration infrared detector technology has obtained important breakthrough and has realized commercial production.It has not only solved refrigerated infrared detector requirement low temperature, and (77K) cooling condition of work also realizes extensive or ultra-large integrated with reading circuit.This technology is fit to adopt the batch production of large scale integrated circuit manufacturing technology, makes with low costization of Infrared Detectors, thereby makes the application of thermal infrared imager be generalized to gradually civil area from traditional military domain.Its speed of response is high, has extremely low noise level, need not chopper during its work auxiliary, is convenient to large-scale production.During work, apply fixing bias voltage or current source at thermistor two ends, the variations in temperature that the incident infra-red radiation causes makes the thermo-sensitive material resistance value change, thereby electric current, voltage are changed, and the variation of reading the signal of telecommunication by reading circuit (ROIC), and the signal of telecommunication is converted to figure signal carries out imaging.
Simultaneously, the processing of non-refrigerated infrared detector belongs to MEMS (MEMS:Micro-Electromechanical Systems) field, is a kind of a kind of high-tech area based on microelectric technique and micro-processing technology.The MEMS technology can be with integrated as a whole tiny cells such as mechanical component, driver part, electric-control system, digital processing systems.That the MEMS device has is small, intelligent, can carry out, can be integrated, the plurality of advantages such as processing compatibility good, cost is low.But, in the manufacturing process of MEMS device, relate to complicated three-dimensional structure, need to make micro-structural with sacrifice layer, as minimize bridge, cantilever beam, cantilever piece and mass etc., in making micro-structural, necessarily comprising fixed support structure is anchor point (Anchor, in this patent, be called bridge pier).
Non-refrigerated infrared detector has been realized integrated with reading circuit, and along with development and the technological innovation of technology path, the pixel of non-refrigerated infrared detector (Pixel) size is from 50 μ m-35 μ m-25 μ m-17 μ m-14 μ m and the development of following size.But because non-refrigerated infrared detector is to belong to the MEMS technical field, some special construction, the bridge pier (Anchor) as supporting construction just can not dwindle according to the pixel dimension equal proportion.So the inventive method, supporting construction bridge pier (Anchor) for the Bolometer key is optimized and innovates exactly, be of a size of 25 μ m applicable to pixel (Pixel), 17 μ m, among the structure and manufacturing process of 14 μ m and following size, and reduce the difficulty that technique is made, when guaranteeing that pixel dimension is dwindled, bridge pier structure dwindles and still keeps original steadiness and reliability, and improves and solve size and dwindle the new problem of introducing.
Prior art: at the upper etching supported hole of sacrifice layer (thickness is 2.0～2.5 μ m), supported hole is the angling hole of straight hole (anisotropic etching) or certain gradient (as 50～70 °), then can use Lift-off technique to carry out Ti, TiNi, NiCr etc. metal filled, then complete the series of process such as supporting layer, heat-sensitive layer, dielectric layer, electrode layer and passivation layer of back.After dielectric layer technique is completed, need to be at supported hole position chemical etching through hole (VIA), through hole must be produced on the centre of supported hole (Post Hole) bottom, can not etch into the sidewall of bridge pier (Anchor).Otherwise the bridge pier sidewall is etched, has destroyed the supporting role of bridge pier, and complete electrode wiring can't be carried out in the back, and electrode metal film poor or can't cover at the Step Coverage of this position at all; Owing to requiring through hole must be produced on the centre of supported hole bottom, keep certain registration tolerance when requiring design, as supported hole (Post Hole) bottom than the large 1.0 μ m of through-hole diameter.If it is 2.0 μ m that through hole requires, the height of supported hole is 2.0 μ m, and the inclination angle is 60 °, considers that the dielectric thickness of supported hole inwall is 0.3～0.5 μ m.So, bridge pier width in supported hole top is even larger about 6.0 μ m.Along with dwindling of pixel dimension, in order to keep the stability of supporting construction, reliability, and good the electrically contacting of big or small constant guarantee that keeps through hole.So bridge pier (Anchor) size can not reduce in the ratio that pixel dimension is dwindled, and so just must take the effective area of pixel, causes the activity coefficient of device on the low side, affects performance of devices.And traditional method generally also need to be carried out aluminium (Al) process filling or the thick electrode metal of sputter after through hole (VIA), and fill process is complicated, and thick metal thermal conductance is large; In addition, if bridge pier (Anchor) dwindles, the size of through hole remains unchanged, and registration tolerance is just little so, can increase the manufacture difficulty of via layer etc.
The utility model content
Technical problem to be solved in the utility model is to provide technical problem to be solved by this invention and is to provide a kind of brand-new tower pier (Anchor) structure: this bridge pier (Anchor) structure can solve the pixel of non-refrigerated infrared detector when scaled, the problem that the size of bridge pier can not be dwindled in proportion; Solve bridge pier place's through hole contraposition and deviation occurs, the problem that pixel lost efficacy; When solving pixel dimension and dwindling, through hole is also wanted corresponding dwindling and the problem that causes bad contact of resistance or inefficacy to increase; Solve in supported hole and need to do the problem that metal filled technique removes to improve contact resistance; Solve the thick sacrifice layer of etching, bridge pier place's supported hole pattern and live width poor repeatability, the problem of lack of homogeneity; And this structure when etching Post Hole2 and through hole, has played the effect of natural termination layer due to the matrix supporting construction of having used Ti or NiCr as structure.Solve pixel dimension and further dwindle (as 17 μ m and following), if bridge pier can not ratio dwindle, the pixel activity coefficient is low, and device performance is poor, can't do the problem of large face battle array and high performance device; Solve original structure and cause the poor problem of side-wall electrode metallic film Step Coverage because of high step and supported hole (degree of depth〉2.0 μ m), the large and large problem of device noise of contact resistance.
The technical scheme that the utility model solves the problems of the technologies described above is as follows: a kind of non-refrigerated infrared detector tower pier, comprise the ASIC circuit, be provided with polyimide sacrificial layer (3) and electrode block (2) on described ASIC circuit, etching supported hole (4-1) is arranged on polyimide sacrificial layer (3); On the disk at etching supported hole (4-1) place, splash-proofing sputtering metal layer (4) is arranged;
Be provided with polyimide sacrificial layer (5) on sacrifice layer (3), etching supported hole (6-1) is arranged on polyimide sacrificial layer (5); On the disk at etching supported hole (6-1) place, splash-proofing sputtering metal layer (6) is arranged;
Supporting layer (7) is arranged on metal level (6), heat-sensitive layer (8) is arranged on supporting layer (7), dielectric layer (9) is arranged on heat-sensitive layer (8), contact hole (11) is arranged on dielectric layer (9), through hole (10) is arranged in supported hole;
Through hole (10) and contact hole (11) are connected with electrode metal (12), deposit passivation layer (13) after electrode metal (12);
After the passivation layer figure is completed, carry out last structure and discharge, remove the sacrifice layer in structure.
The invention has the beneficial effects as follows: at first this structure can guarantee stability and the reliability of non-refrigerated infrared detector bridge pier structure; When pixel dimension was dwindled, the area of bridge pier also carried out scaled down by pixel dimension, dwindled the bridge pier area, can increase the activity coefficient of pixel, improved the performance of detector; Although this structure has been dwindled the area of bridge pier, but still can keep even suitably increasing the size of through hole (VIA), and increase the registration tolerance of through hole (VIA), reduce the technique manufacture difficulty; On the basis that does not increase metal (Al) filling and Lift-off technique, carried out the metal filled of metal filled and whole side-walls in the through hole, and make Ti, NiCr metallic film and silicon nitride film are together as the supporting layer of bridge pier, the reliability and stability of supporting layer have been reinforced, and the natural barrier layer during as the through hole etching, improve contact resistance; Because tower structure is that the chemical etching that carries out at twice sacrifice layer is completed, although increased the one-time process step, but can control the pattern of Post Hole and CD (Critical Dimension) better, make the structure of tower (recessed formula) structure of design and final molding in full accord, repeatability and good uniformity.This new structure may be used on also can be applicable in the single layer structure and double-decker of other bolographs (Bolometer) in the non-refrigerated infrared detector of 17 μ m and following size.
And the range of application of this structure is also contained in other bolographs including but not limited in non-refrigerated infrared detector, in THz (Terahertz) bolograph.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the metal of described metal level (4) and metal level (6) is Ti or NiCr, and thickness is 50～200nm.
On the basis of technique scheme, the present invention can also do following improvement.
Further, described supporting layer (7) is silicon nitride film, and thickness is
Or with the silica buffer layer thin film, the thickness of silica is
Described silicon nitride film is the low stress nitride silicon thin film, and stress is 0 ± 50Mpa.
On the basis of technique scheme, the present invention can also do following improvement:
Further, described dielectric layer (9) is the low stress nitride silicon thin film, and thickness is:
On the basis of technique scheme, the present invention can also do following improvement.
Further, described electrode metal layer (12) can be Ti, NiCr, and one or more in Cr or V, thickness is
Further, described passivation layer (13) is silicon nitride, and thickness is
Description of drawings
Fig. 1 and Fig. 2 are configuration process schematic diagram of the present invention; Fig. 3 is that the present invention carries out the final graphics schematic diagram after structure discharges; Fig. 4 is the final schematic diagram of VIA of the present invention hole contraposition when large deviation occurring, and connection is connected still intactly but structure is with electricity, does not affect performance of devices at all.
In accompanying drawing, the list of parts of each label representative is as follows:
1, ASIC circuit, 2, electrode block, 3, polyimide sacrificial layer, 4, metal level, 4-1, supported hole, 5, polyimide sacrificial layer, 6, metal level, 6-1, supported hole, 7, supporting layer, 8, heat-sensitive layer, 9, dielectric layer, 10, through hole, 11, contact hole, 12, electrode metal layer, 13, passivation layer.
The specific embodiment
Below in conjunction with accompanying drawing, principle of the present utility model and feature are described, example only is used for explaining the utility model, is not be used to limiting scope of the present utility model.
As shown in Figure 1, a kind of non-refrigerated infrared detector tower pier comprises the ASIC circuit, is provided with polyimide sacrificial layer (3) and electrode block (2) on described ASIC circuit, and etching supported hole (4-1) is arranged on polyimide sacrificial layer (3); On the disk at etching supported hole (4-1) place, splash-proofing sputtering metal layer (4) is arranged;
Be provided with polyimide sacrificial layer (5) on sacrifice layer (3), etching supported hole (6-1) is arranged on polyimide sacrificial layer (5); On the disk at etching supported hole (6-1) place, splash-proofing sputtering metal layer (6) is arranged;
Supporting layer (7) is arranged on metal level (6), heat-sensitive layer (8) is arranged on supporting layer (7), dielectric layer (9) is arranged on heat-sensitive layer (8), contact hole (11) is arranged on dielectric layer (9), through hole (10) is arranged in supported hole;
At through hole (10) and contact hole (11), electrode metal (12) is arranged, deposit passivation layer (13) after electrode metal (12), after completing passivation layer, carry out last structure and discharge, remove sacrifice layer.
The ASIC circuit refers to: Application Specific Integrated Circuit, application-specific IC).
The above is only preferred embodiment of the present utility model, and is in order to limit the utility model, not all within spirit of the present utility model and principle, any modification of doing, is equal to replacement, improvement etc., within all should being included in protection domain of the present utility model.
Claims (6)
1. a non-refrigerated infrared detector tower pier, comprise the ASIC circuit, it is characterized in that, is provided with polyimide sacrificial layer (3) and electrode block (2) on described ASIC circuit, and etching supported hole (4-1) is arranged on sacrifice layer (3); On the disk at etching supported hole (4-1) place, splash-proofing sputtering metal layer (4) is arranged;
Be provided with polyimide sacrificial layer (5) on sacrifice layer (3), etching supported hole (6-1) is arranged on polyimide sacrificial layer (5); On the disk at etching supported hole (6-1) place, splash-proofing sputtering metal layer (6) is arranged;
Supporting layer (7) is arranged on metal level (6), heat-sensitive layer (8) is arranged on supporting layer (7), dielectric layer (9) is arranged on heat-sensitive layer (8), through hole (10) and contact hole (11) are arranged on dielectric layer (9);
At through hole (10) and contact hole (11), electrode metal (12) is arranged, deposit passivation layer (13) after electrode metal (12).
2. a kind of non-refrigerated infrared detector tower pier that requires according to claim 1 is characterized in that the metal of described metal level (4) and metal level (6) is Ti or NiCr, and thickness is 50～200nm.
3. a kind of non-refrigerated infrared detector tower pier that requires according to claim 1 and 2 is characterized in that described supporting layer (7) is silicon nitride film, and thickness is
Or with the silicon nitride of silica cushion, the thickness of silica cushion is
Described silicon nitride film is low stress SiNx, and stress is 0 ± 50MPa.
4. a kind of non-refrigerated infrared detector tower pier that requires according to claim 3 is characterized in that described dielectric layer (9) is the low stress nitride silicon thin film, and thickness is
5. a kind of non-refrigerated infrared detector tower pier that requires according to claim 4 is characterized in that described electrode metal layer (12) thickness is
6. a kind of non-refrigerated infrared detector tower pier that requires according to claim 5 is characterized in that described passivation layer (13) is silicon nitride, and thickness is
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320061460 CN203269550U (en) | 2013-02-04 | 2013-02-04 | Tower-type anchor of uncooled infrared detector |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201320061460 CN203269550U (en) | 2013-02-04 | 2013-02-04 | Tower-type anchor of uncooled infrared detector |
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| CN203269550U true CN203269550U (en) | 2013-11-06 |
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| CN 201320061460 Expired - Lifetime CN203269550U (en) | 2013-02-04 | 2013-02-04 | Tower-type anchor of uncooled infrared detector |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103728029A (en) * | 2013-12-19 | 2014-04-16 | 无锡微奇科技有限公司 | Infrared bolometer based on MEMS and manufacturing method thereof |
| CN110127592A (en) * | 2019-04-15 | 2019-08-16 | 上海华虹宏力半导体制造有限公司 | MEMS perceptron structure and its manufacturing method |
| CN113432725A (en) * | 2021-06-25 | 2021-09-24 | 北京北方高业科技有限公司 | Infrared detector with multilayer structure based on CMOS (complementary Metal oxide semiconductor) process |
| CN114088208A (en) * | 2021-03-26 | 2022-02-25 | 北京北方高业科技有限公司 | Infrared detector based on CMOS (complementary Metal oxide semiconductor) process and preparation method thereof |
| CN114112055A (en) * | 2021-03-26 | 2022-03-01 | 北京北方高业科技有限公司 | Infrared detector based on CMOS (complementary Metal oxide semiconductor) process and preparation method thereof |
-
2013
- 2013-02-04 CN CN 201320061460 patent/CN203269550U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103728029A (en) * | 2013-12-19 | 2014-04-16 | 无锡微奇科技有限公司 | Infrared bolometer based on MEMS and manufacturing method thereof |
| CN103728029B (en) * | 2013-12-19 | 2016-05-11 | 无锡元创华芯微机电有限公司 | Infared bolometer based on MEMS and preparation method thereof |
| CN110127592A (en) * | 2019-04-15 | 2019-08-16 | 上海华虹宏力半导体制造有限公司 | MEMS perceptron structure and its manufacturing method |
| CN114088208A (en) * | 2021-03-26 | 2022-02-25 | 北京北方高业科技有限公司 | Infrared detector based on CMOS (complementary Metal oxide semiconductor) process and preparation method thereof |
| CN114112055A (en) * | 2021-03-26 | 2022-03-01 | 北京北方高业科技有限公司 | Infrared detector based on CMOS (complementary Metal oxide semiconductor) process and preparation method thereof |
| CN113432725A (en) * | 2021-06-25 | 2021-09-24 | 北京北方高业科技有限公司 | Infrared detector with multilayer structure based on CMOS (complementary Metal oxide semiconductor) process |
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Address after: 264006 Yantai economic and Technological Development Zone, Guiyang, No. 11 main street, Shandong Patentee after: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Address before: 264006 Yantai economic and Technological Development Zone, Guiyang, No. 11 main street, Shandong Patentee before: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20190321 Address after: 214000 China Sensor Network International Innovation Park A502, 200 Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province Patentee after: WUXI INFISENSE TECHNOLOGY CO.,LTD. Address before: 264006 No. 11 Guiyang Street, Yantai Economic and Technological Development Zone, Shandong Province Patentee before: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. |
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Granted publication date: 20131106 |
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