CN104465850B - Pyroelectric infrared detector based on Graphene absorbed layer and manufacture method thereof - Google Patents
Pyroelectric infrared detector based on Graphene absorbed layer and manufacture method thereof Download PDFInfo
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- CN104465850B CN104465850B CN201410701309.3A CN201410701309A CN104465850B CN 104465850 B CN104465850 B CN 104465850B CN 201410701309 A CN201410701309 A CN 201410701309A CN 104465850 B CN104465850 B CN 104465850B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 239000013078 crystal Substances 0.000 claims abstract description 56
- 238000010521 absorption reaction Methods 0.000 claims abstract description 46
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 32
- 239000000956 alloy Substances 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- -1 graphite alkene Chemical class 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 238000009718 spray deposition Methods 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical group CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000003754 machining Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000005616 pyroelectricity Effects 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 239000011358 absorbing material Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The embodiment of the invention discloses a kind of pyroelectric infrared detector based on Graphene absorbed layer and manufacture method thereof, including: prepare pyroelectric crystal substrate；The side of pyroelectric crystal substrate deposits nickel-chrome alloy layer and forms electrode；Upper electrode is formed Graphene infrared absorption layer；The side contrary with upper electrode of pyroelectric crystal substrate deposits nickel-chrome alloy layer and forms bottom electrode；By on bottom electrode metal bonding to high thermal impedance substrate；The Surface Machining of Graphene infrared absorption layer is become nanotopography structure, forms infrared-sensitive absorbed layer.In embodiments of the invention, the multi-layer film structure of nickel-chrome alloy layer and Graphene infrared absorption layer is as the thermally sensitive layer of this pyroelectric infrared detector, there is more preferable surface soundness, high absorptance and less heat loss, it is possible to obtain high-performance thermal response.
Description
Technical field
The present invention relates to pyroelectric infrared detector technical field, especially relate to a kind of pyroelectric infrared detector based on Graphene absorbed layer and manufacture method thereof.
Background technology
Pyroelectricity material used by pyroelectric infrared detector has the kinds such as monocrystalline, pottery, thin film.The pyroelectric coefficient of monocrystal pyroelectric crystal is high, dielectric loss is little, and the best pyroelectric detector of current performance selects monocrystalline to make, such as TGS, LATGS, LiTaO mostly3
Deng；Pottery pyroelectric crystal cost is relatively low, but response is relatively slow, if intrusion alarm PZT ceramic probe operating frequency is 0.2～5Hz；Pyroelectricity material is a kind of electrolyte with spontaneous polarization, and its spontaneous polarization strength varies with temperature, and can describe with pyroelectric coefficient p, and p=dP/dT(P is polarization intensity, and T is temperature).
At a constant temperature, the spontaneous polarization of material is neutralized by internal electric charge and surface adsorption electric charge.If pyroelectricity material being made surface be perpendicular to the parallel thin slice of polarised direction, then when infra-red radiation incides sheet surface, thin slice, because absorbing radiation and occurrence temperature change, causes the change of polarization intensity.And neutralize electric charge and do not catch up with this change due to the resistivity height of material, its result be thin slice two surfaces between transient voltage occurs.If there being external resistance to be connected across between two surfaces, electric charge is just discharged by external circuit.The size of electric current, in addition to being directly proportional to pyroelectric coefficient, is also directly proportional to the rate of temperature change of thin slice, therefore, can be used to measure the power of incident radiation.
Summary of the invention
An object of the present invention is to provide a kind of pyroelectric infrared detector based on Graphene absorbed layer simple to operate, that manufacture and has the method manufacturing pyroelectric infrared detector based on Graphene absorbed layer of good heat-absorption properties and thermal response property.
An object of the present invention is to provide a kind of pyroelectric infrared detector based on Graphene absorbed layer with good heat-absorption properties and thermal response property.
Technical scheme disclosed by the invention includes:
The method providing a kind of manufacture pyroelectric infrared detector based on Graphene absorbed layer, it is characterised in that including: prepare pyroelectric crystal substrate；The side of described pyroelectric crystal substrate deposits nickel-chrome alloy layer, electrode in formation；Deposited graphite alkene infrared absorption layer on electrode on described；Deposit nickel-chrome alloy layer on the contrary side of electrode at described pyroelectric crystal substrate on described, form bottom electrode；By on described bottom electrode metal bonding to high thermal impedance substrate；The surface of described Graphene infrared absorption layer is processed into nanotopography structure at least partially, forms infrared-sensitive absorbed layer.
In one embodiment of the present of invention, described pyroelectric crystal substrate is lithium tantalate wafer.
In one embodiment of the present of invention, the described step preparing pyroelectric crystal substrate includes: is ground by pyroelectric crystal, polishes, chemical attack and/or cleaning treatment, it is thus achieved that pyroelectric crystal substrate.
In one embodiment of the present of invention, the described step depositing nickel-chrome alloy layer on the side of described pyroelectric crystal substrate includes: deposit nickel-chrome alloy layer on the side of described pyroelectric crystal substrate with radio frequency magnetron sputtering method.
In one embodiment of the present of invention, described on described on electrode the step of deposited graphite alkene infrared absorption layer include: on described, on electrode, deposit described Graphene infrared absorption layer with spraying process.
In one embodiment of the present of invention, described depositing the step of nickel-chrome alloy layer on the contrary side of electrode and include on described at described pyroelectric crystal substrate: deposit nickel-chrome alloy layer on the contrary side of electrode at described pyroelectric crystal substrate on described with radio frequency magnetron sputtering method.
In one embodiment of the present of invention, the described step being processed into nanotopography structure at least partially by the surface of described Graphene infrared absorption layer includes: with spray deposition the surface of described Graphene infrared absorption layer is processed into nanotopography structure at least partially.
In one embodiment of the present of invention, also included before by described bottom electrode metal bonding to high thermal impedance substrate: on the surface of described high thermal impedance substrate, form lead-in wire electrode, and make described bottom electrode and described lead-in wire electrode contact when on described bottom electrode is by metal bonding to described high thermal impedance substrate.
Embodiments of the invention additionally provide a kind of pyroelectric infrared detector based on Graphene absorbed layer, it is characterised in that including: pyroelectric crystal substrate；Upper electrode, described upper electrode is formed on the side of described pyroelectric crystal substrate；Infrared-sensitive absorbed layer, described infrared-sensitive absorbed layer is formed on described upper electrode, and described infrared-sensitive absorbed layer includes Graphene infrared absorption layer, the surface of described Graphene infrared absorption layer include nanotopography structure at least partially；Bottom electrode, described bottom electrode is formed on the side contrary with described upper electrode of described pyroelectric crystal substrate；High thermal impedance substrate, on described bottom electrode metal bonding to described high thermal impedance substrate.
In one embodiment of the present of invention, also including the electrode that goes between, described lead-in wire electrode is formed on the surface of described high thermal impedance substrate and contacts with described bottom electrode.
In embodiments of the invention, the multi-layer film structure that nickel-chrome alloy layer and Graphene infrared absorption layer are formed is as the thermally sensitive layer of this pyroelectric infrared detector based on Graphene absorbed layer, compared with making thermally sensitive layer with single Metal absorption layer film, there is more preferable surface soundness, high absorptance and less heat loss, high-performance thermal response can be obtained, thus meet the high accuracy Infrared Detectors high standard requirement to its sensing element thermal response property, it is beneficial to realize high accuracy Infrared Detectors based on pyroelectric crystal.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the method manufacturing pyroelectric infrared detector based on Graphene absorbed layer of one embodiment of the invention.
Fig. 2 is the structural representation of the pyroelectric infrared detector based on Graphene absorbed layer of one embodiment of the invention.
Fig. 3 is the structural representation of the pyroelectric infrared detector based on Graphene absorbed layer of another embodiment of the present invention.
Detailed description of the invention
The concrete steps of the method manufacturing pyroelectric infrared detector based on Graphene absorbed layer of embodiments of the invention and the structure of the pyroelectric infrared detector based on Graphene absorbed layer of manufacture is described in detail below in conjunction with accompanying drawing.
Fig. 1 shows the schematic flow sheet of the method manufacturing pyroelectric infrared detector based on Graphene absorbed layer of one embodiment of the present of invention.
As it is shown in figure 1, in one embodiment of the present of invention, in step 10, first prepare pyroelectric crystal substrate, this pyroelectric crystal substrate is as the substrate components of the pyroelectric infrared detector based on Graphene absorbed layer that will manufacture.Such as, in an embodiment, can be ground by pyroelectric crystal, polish, chemical attack and/or cleaning etc. process, thus obtain desired pyroelectric crystal substrate.
In embodiments of the invention, pyroelectric crystal used herein can be applicable pyroelectric crystal.Such as, in an embodiment, pyroelectric crystal can be lithium tantalate wafer.
In embodiments of the invention, the thickness of pyroelectric crystal substrate can be any applicable thickness.Such as, in an embodiment, it is thus achieved that the thickness of pyroelectric crystal substrate can be about 50 microns, such as 50 ± 5 microns, inventor finds, uses the pyroelectric crystal substrate of this thickness, the best performance of the pyroelectric infrared detector based on Graphene absorbed layer being finally made；When the thickness of pyroelectric crystal substrate thinner or thicker time, the performance of the pyroelectric infrared detector based on Graphene absorbed layer being finally made is all preferable not as good as the pyroelectric crystal substrate using this thickness.
Then, in step 12, electrode can be formed on pyroelectric crystal substrate.
Such as, in an embodiment, can on the side of pyroelectric crystal substrate formation of deposits nickel-chrome alloy layer, this nickel-chrome alloy layer forms electrode.
In embodiments of the invention, it is possible to use the method being suitable for forms electrode.Such as, in an embodiment, it is possible to use radio frequency magnetron sputtering method on the side of this pyroelectric crystal substrate formation of deposits nickel-chrome alloy layer thus formed on electrode.The concrete steps of radio frequency magnetron sputtering method can be identical with method commonly used in the art, is not described in detail in this.
In embodiments of the invention, the thickness of nickel-chrome alloy layer here can be applicable thickness.Such as, in an embodiment, the thickness of the nickel-chrome alloy layer of formation can be 150 ± 5 nanometers.Inventor finds, uses the nickel-chrome alloy layer of this thickness, the best performance of the pyroelectric infrared detector based on Graphene absorbed layer being finally made；When the thickness of nickel-chrome alloy layer thinner or thicker time, the performance of the pyroelectric infrared detector based on Graphene absorbed layer being finally made is all preferable not as good as the nickel-chrome alloy layer using this thickness.
After defining electrode, at step 14, can on upper electrode formation of deposits Graphene infrared absorption layer.
In embodiments of the invention, it is possible to use the method being suitable for forms Graphene infrared absorption layer on upper electrode.Such as, in an embodiment, it is possible to use spraying process is this Graphene infrared absorption layer of formation of deposits on upper electrode.
In embodiments of the invention, the thickness of this Graphene infrared absorption layer can be applicable thickness.Such as, in an embodiment, the thickness of Graphene infrared absorption layer can be 2 millimeters or be less than 2 millimeters.Inventor finds, uses the Graphene infrared absorption layer of this thickness, the best performance of the pyroelectric infrared detector based on Graphene absorbed layer being finally made；When Graphene INFRARED ABSORPTION layer thickness thinner or thicker time, the performance of the pyroelectric infrared detector based on Graphene absorbed layer being finally made is all preferable not as good as the Graphene infrared absorption layer using this thickness.
In one embodiment of the present of invention, in step 16, it is also possible to formation of deposits nickel-chrome alloy layer on the side contrary with upper electrode of pyroelectric crystal substrate, this nickel-chrome alloy layer thus form bottom electrode.
In embodiments of the invention, it is possible to use the method being suitable for forms bottom electrode.Such as, in an embodiment, it is possible to use radio frequency magnetron sputtering method on the side contrary with upper electrode of this pyroelectric crystal substrate formation of deposits nickel-chrome alloy layer thus form bottom electrode.The concrete steps of radio frequency magnetron sputtering method can be identical with method commonly used in the art, is not described in detail in this.
In embodiments of the invention, the thickness of the nickel-chrome alloy layer of bottom electrode here can be applicable thickness.Such as, in an embodiment, the thickness of the nickel-chrome alloy layer of formation can be 150 ± 5 nanometers.Inventor finds, uses the nickel-chrome alloy layer of this thickness, the best performance of the pyroelectric infrared detector based on Graphene absorbed layer being finally made；When the thickness of nickel-chrome alloy layer thinner or thicker time, the performance of the pyroelectric infrared detector based on Graphene absorbed layer being finally made is all preferable not as good as the nickel-chrome alloy layer using this thickness.
In embodiments of the invention, electrode can be initially formed, then form bottom electrode；Bottom electrode can also be initially formed, electrode on being formed；Or electrode and bottom electrode can also be concurrently formed.
In one embodiment of the present of invention, after defining bottom electrode, in step 18, can be by the method for metal bonding by bottom electrode (the most also will define the pyroelectric crystal substrate of bottom electrode) metal bonding to high thermal impedance substrate.
In one embodiment of the present of invention, after defining Graphene infrared absorption layer, in step 20, the surface of this Graphene infrared absorption layer can be processed into nanotopography structure at least partially, so that this nanotopography structure forms infrared-sensitive absorbed layer.Here, described " nanotopography structure " refers to the structure that the rule become by the structural arrangement of the most small nanometer scale or erratic array forms.
In embodiments of the invention, it is possible to use nanotopography structure is processed in the surface of this Graphene infrared absorption layer by method at least partially that be suitable for.Such as, in an embodiment, it is possible to use spray deposition processes is processed into nanotopography structure at least partially by the surface of this Graphene infrared absorption layer.Spray deposition processes can use method commonly used in the art, is not described in detail in this.
Through abovementioned steps, required pyroelectric infrared detector based on Graphene absorbed layer can be obtained.
Fig. 2 is the structural representation of the pyroelectric infrared detector based on Graphene absorbed layer that the method according to one embodiment of the invention manufactures.
As in figure 2 it is shown, pyroelectric crystal substrate 3, upper electrode 2, bottom electrode 4, infrared-sensitive absorbed layer 1 and high thermal impedance substrate 5 should be included pyroelectric infrared detector based on Graphene absorbed layer.
Upper electrode 2 is formed on the side of pyroelectric crystal substrate 3.Infrared-sensitive absorbed layer 1 is formed on electrode 2, and this infrared-sensitive absorbed layer 1 includes Graphene infrared absorption layer, the surface of this Graphene infrared absorption layer include nanotopography structure (not shown) at least partially.Bottom electrode 4 is formed on the side contrary with upper electrode 2 of pyroelectric crystal substrate 3.Bottom electrode 4 metal bonding is in high thermal impedance substrate 5.
In one embodiment of the present of invention, the step forming lead-in wire electrode can also be included before by bottom electrode metal bonding to high thermal impedance substrate.That is, the surface of high thermal impedance substrate forms lead-in wire electrode, and make when on bottom electrode is by metal bonding to high thermal impedance substrate, this bottom electrode and this lead-in wire electrode contact.Now, the pyroelectric infrared detector based on Graphene absorbed layer of formation structural representation as it is shown on figure 3, wherein 6 for lead-in wire electrode.
The pyroelectric infrared detector based on Graphene absorbed layer of method manufacture can be used to make pyroelectric infrared detector according to an embodiment of the invention.For example, it is possible to be attached with outside output circuit by the pyroelectric infrared detector based on Graphene absorbed layer of method manufacture according to an embodiment of the invention, common vacuum seal loads in metal shell.Window is offered at metal shell top, and fixes optical filter at window by epoxy resin, constitutes infra-red radiation window.Infra-red radiation selectivity is by after infra-red radiation window, and direct projection is on the infrared-sensitive absorbed layer of pyroelectric infrared detector based on Graphene absorbed layer.
In embodiments of the invention, the multi-layer film structure that nichrome and Graphene infrared absorption layer are formed is as the thermally sensitive layer of this pyroelectric infrared detector based on Graphene absorbed layer, compared with making thermally sensitive layer with single Metal absorption layer film, there is more preferable surface soundness, high absorptance and less heat loss, high-performance thermal response can be obtained, thus meet the high accuracy Infrared Detectors high standard requirement to its sensing element thermal response property, it is beneficial to realize high accuracy Infrared Detectors based on pyroelectric crystal.
In embodiments of the invention, use the Graphene infrared absorption layer with nanotopography structure as the infrared-sensitive absorbed layer of Infrared Detectors sensing element, first, Graphene INFRARED ABSORPTION itself is better than carbon black, gold black, platinum black black, silver-colored etc. is applied to the absorbing material of Infrared Detectors sensing element to absorbability and the absorption sensitivity of infrared light；Secondly, Graphene infrared absorption layer is designed as nanotopography structure, can improve the heat-absorption properties of Graphene infrared absorption layer further, is beneficial to improve further the accuracy of detection of Infrared Detectors.The Graphene infrared absorption layer in the present invention with nanotopography structure is by using spraying process to be processed into nanotopography structure, and the great originality of its processing method is beneficial to realize the update of pyroelectric infrared detector.
Describe the present invention above by specific embodiment, but the present invention is not limited to these specific embodiments.It will be understood by those skilled in the art that and the present invention can also make various amendment, equivalent, change etc., these conversion, all should be within protection scope of the present invention without departing from the spirit of the present invention.Additionally, " embodiment " described in above many places represents different embodiments, naturally it is also possible to it is completely or partially combined in one embodiment.
Claims (10)
1. the method manufacturing pyroelectric infrared detector based on Graphene absorbed layer, it is characterised in that including:
Prepare pyroelectric crystal substrate；
The side of described pyroelectric crystal substrate deposits nickel-chrome alloy layer, electrode in formation；
Deposited graphite alkene infrared absorption layer on electrode on described；
Deposit nickel-chrome alloy layer on the contrary side of electrode at described pyroelectric crystal substrate on described, form bottom electrode；
By on described bottom electrode metal bonding to high thermal impedance substrate；
The surface of described Graphene infrared absorption layer is processed into nanotopography structure at least partially, forms infrared-sensitive absorbed layer.
2. the method for claim 1, it is characterised in that: described pyroelectric crystal substrate is lithium tantalate wafer.
3. as described in claim 1 or 2 method, it is characterised in that the described step preparing pyroelectric crystal substrate includes: pyroelectric crystal is ground, polishes, chemical attack and/or cleaning treatment, it is thus achieved that pyroelectric crystal substrate.
4. the method for claim 1, it is characterised in that the described step depositing nickel-chrome alloy layer on the side of described pyroelectric crystal substrate includes: deposit nickel-chrome alloy layer on the side of described pyroelectric crystal substrate with radio frequency magnetron sputtering method.
5. the method for claim 1, it is characterised in that described on described on electrode the step of deposited graphite alkene infrared absorption layer include: on described, on electrode, deposit described Graphene infrared absorption layer with spraying process.
6. the method for claim 1, it is characterized in that, described depositing the step of nickel-chrome alloy layer on the contrary side of electrode and include on described at described pyroelectric crystal substrate: deposit nickel-chrome alloy layer on the contrary side of electrode at described pyroelectric crystal substrate with radio frequency magnetron sputtering method on described.
7. the method for claim 1, it is characterized in that, the described step being processed into nanotopography structure at least partially by the surface of described Graphene infrared absorption layer includes: with spray deposition the surface of described Graphene infrared absorption layer is processed into nanotopography structure at least partially.
8. the method for claim 1, it is characterized in that, also included before by described bottom electrode metal bonding to high thermal impedance substrate: on the surface of described high thermal impedance substrate, form lead-in wire electrode, and make described bottom electrode and described lead-in wire electrode contact when on described bottom electrode is by metal bonding to described high thermal impedance substrate.
9. a pyroelectric infrared detector based on Graphene absorbed layer, it is characterised in that including:
Pyroelectric crystal substrate；
Upper electrode, described upper electrode is formed on the side of described pyroelectric crystal substrate；
Infrared-sensitive absorbed layer, described infrared-sensitive absorbed layer is formed on described upper electrode, and described infrared-sensitive absorbed layer includes Graphene infrared absorption layer, the surface of described Graphene infrared absorption layer include nanotopography structure at least partially；
Bottom electrode, described bottom electrode is formed on the side contrary with described upper electrode of described pyroelectric crystal substrate；
High thermal impedance substrate, on described bottom electrode metal bonding to described high thermal impedance substrate.
10. pyroelectric infrared detector based on Graphene absorbed layer as claimed in claim 9, it is characterised in that: also including the electrode that goes between, described lead-in wire electrode is formed on the surface of described high thermal impedance substrate and contacts with described bottom electrode.
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Families Citing this family (7)
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| CN106248221A (en) * | 2016-07-19 | 2016-12-21 | 中国科学院重庆绿色智能技术研究院 | A kind of non-refrigerated infrared detector based on Graphene and in situ manufacture method |
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| US20200271574A1 (en) * | 2017-10-02 | 2020-08-27 | Koninklijke Philips N.V. | Infrared detector assembly with integrated temperature sensing, gas measurement apparatus method |
| CN109900368A (en) * | 2018-12-29 | 2019-06-18 | 哈尔滨理工大学 | A kind of pyroelectric detector and preparation method thereof of phosphorus alkene infrared absorption layer modification |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995002904A1 (en) * | 1993-07-15 | 1995-01-26 | Siemens Aktiengesellschaft | Pyrodetector element with an epitaxially grown pyroelectric layer and process for producing the same |
| CN1234614A (en) * | 1998-12-04 | 1999-11-10 | 中国科学院上海冶金研究所 | Method for enhancing responsivity of pyroelectric infrared detector |
| CN102830086A (en) * | 2012-08-31 | 2012-12-19 | 中北大学 | Infrared detector sensing element based on black silicon absorption layer and multilayer combination membrane structure |
-
2014
- 2014-11-28 CN CN201410701309.3A patent/CN104465850B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995002904A1 (en) * | 1993-07-15 | 1995-01-26 | Siemens Aktiengesellschaft | Pyrodetector element with an epitaxially grown pyroelectric layer and process for producing the same |
| CN1234614A (en) * | 1998-12-04 | 1999-11-10 | 中国科学院上海冶金研究所 | Method for enhancing responsivity of pyroelectric infrared detector |
| CN102830086A (en) * | 2012-08-31 | 2012-12-19 | 中北大学 | Infrared detector sensing element based on black silicon absorption layer and multilayer combination membrane structure |
Non-Patent Citations (1)
| Title |
|---|
| 基于超薄钽酸锂晶片及炭黑红外吸收层的热释电探测器;赵玲 等;《纳米技术与精密工程》;20140131;第12卷(第1期);全文 * |
Cited By (1)
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| EP3905351A4 (en) * | 2018-12-28 | 2022-12-21 | Nuctech Company Limited | Terahertz detector and manufacturing method therefor |
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| CN104465850A (en) | 2015-03-25 |
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