CN203165903U - Semiconductor detector - Google Patents
Semiconductor detector Download PDFInfo
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- CN203165903U CN203165903U CN 201220690685 CN201220690685U CN203165903U CN 203165903 U CN203165903 U CN 203165903U CN 201220690685 CN201220690685 CN 201220690685 CN 201220690685 U CN201220690685 U CN 201220690685U CN 203165903 U CN203165903 U CN 203165903U
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- layer
- gallium nitride
- detector
- nitride layer
- semiconductor
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Abstract
The utility model discloses a semiconductor detector and belongs to the semiconductor technology field. The detector comprises a substrate, a buffer layer, an undoped gallium nitride layer and two electrodes, wherein the buffer layer and the undoped gallium nitride layer are successively laminated on the substrate; the two electrodes are arranged on the undoped gallium nitride layer. The undoped gallium nitride layer is provided with a metal nanoparticle layer. The metal nanoparticles on the metal nanoparticle layer are distributed with an interval. According to the detector of the utility model, through setting the metal nanoparticle layer on the undoped gallium nitride layer of a semiconductor layer, when the detector works, incident light irradiates on the metal nanoparticle layer located on the semiconductor layer and plasmas on the metal surface is excited so as to generate a resonant reaction with the incident light, therefore, a scattering effect of the light is enhanced, a composite efficiency of an electron hole pair is greatly increased and detection performance of the probe light is further increased too.
Description
Technical field
The utility model relates to technical field of semiconductors, particularly a kind of semiconductor detector.
Background technology
Semiconductor detector is to be the radiation detector of probing medium with the semi-conducting material.Along with development of semiconductor, ultraviolet light detector based on gallium nitride material, because have that volume is little, the life-span is long, physics and stable chemical performance, cost is low and advantage such as energy-conservation, obtains seeing more and more widely application in industries such as biologic medical, military aerospace, environmental monitorings.
In order to improve the detection performance of kalium carbide ultraviolet light detector, pass through to improve the photoconductivity gain of detector in the prior art with the response efficiency of raising detector, thereby improve the detection performance of detector.Detector based on the photoconductivity gain technology generally comprises substrate, stack gradually at the resilient coating on the substrate and plain gallium nitride layer and be located at two electrodes on the plain gallium nitride layer.
In realizing process of the present utility model, the inventor finds that there is following problem at least in prior art:
The ultraviolet light detector of available technology adopting photoconductivity gain technology when improving response efficiency, can be subjected to the influence of the wide and interference signal of half-wave, has influenced the detection performance of detector.
The utility model content
In order to solve prior art problems, the utility model embodiment provides a kind of semiconductor detector.Described technical scheme is as follows:
The utility model embodiment provides a kind of semiconductor detector, and described detector comprises:
Substrate, stack gradually at the resilient coating on the described substrate and plain gallium nitride layer and be located at two electrodes on the described plain gallium nitride layer, described plain gallium nitride layer is provided with metal nano-particle layer, and the metal nanoparticle on the described metal nano-particle layer is spaced apart.
Preferably, described metal nanoparticle is the aluminum metal nano particle.
Preferably, described electrode disk is nickel/golden metal pad.
Alternatively, described resilient coating is the gallium nitride resilient coating.
Particularly, described substrate is Sapphire Substrate.
The beneficial effect that the technical scheme that the utility model embodiment provides is brought is: by the plain gallium nitride layer at semiconductor layer metal nano-particle layer is set, when detector in when work, the incident light irradiation is on the metal nano-particle layer on the semiconductor layer, excited the metallic surface plasma, with incident light generation resonant reaction, thereby strengthened the scattering of light effect, made the combined efficiency of electron hole pair be greatly improved, and then improved the detection performance of surveying light.
Description of drawings
In order to be illustrated more clearly in the technical scheme among the utility model embodiment, the accompanying drawing of required use is done to introduce simply in will describing embodiment below, apparently, accompanying drawing in describing below only is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the front view of the semiconductor detector that provides of the utility model embodiment;
Fig. 2 is the vertical view of the semiconductor detector that provides of the utility model embodiment.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing the utility model execution mode is described in further detail.
Embodiment
The utility model embodiment provides a kind of semiconductor detector, and referring to Fig. 1 and Fig. 2, this detector comprises:
Substrate 11, stack gradually at the resilient coating 12 on the substrate 11 and plain gallium nitride layer 13 and be located at two electrodes 2 on the plain gallium nitride layer 13, plain gallium nitride layer 13 is provided with metal nano-particle layer 14, and the metal nanoparticle in the metal nano-particle layer 14 is spaced apart.
Particularly, can adopt the metal organic chemical vapor deposition growth technology, successively grown buffer layer 12 and plain gallium nitride layer 13 on substrate 11.More specifically, the resilient coating 12 of growth and the thickness of plain gallium nitride layer 13 are formulated according to actual needs, and this technology is well known to those skilled in the art, and is not described in detail in this.
Particularly, can be by photoetching, evaporation, peel off with the thermal annealing technology and make metal nano-particle layer 14 at plain gallium nitride layer 13.
Preferably, in the present embodiment, metal nanoparticle is the aluminum metal nano particle.In other embodiments, also can adopt metal nanoparticles such as silver.
Preferably, electrode 2 is nickel/golden metal pad.
Alternatively, resilient coating 12 is the gallium nitride resilient coating.
Particularly, substrate 11 can be Sapphire Substrate.
Particularly, in the present embodiment, the semiconductor layer of the semiconductor detector that the utility model embodiment provides and electrode can make by the following method:
Storied long thickness is that 20nm gallium nitride layer and thickness are the plain gallium nitride layer of 3um on the Sapphire Substrate upper strata successively to adopt the metal organic chemical vapor deposition growth technology.Wherein, when growth, can provide gallium element and nitrogen element respectively by trimethyl gallium and ammonia.
By photoetching, evaporation, peel off and the thermal annealing technology, make 50nm thickness at plain gallium nitride layer, the nano particle aluminium lamination of figure arranged.Particularly, growth can be had the semiconductor of graphical aluminium lamination slowly to be heated to 700 ℃, keep 300 seconds, cooling then makes aluminium lamination form single and the aluminum metal nano particle that is separated from each other by surface tension at plain gallium nitride layer.
By photoetching, evaporation and lift-off technology, make nickel/golden metal pad at plain gallium nitride layer.
The beneficial effect that the technical scheme that the utility model embodiment provides is brought is: by the plain gallium nitride layer at semiconductor layer metal nano-particle layer is set, when detector in when work, the incident light irradiation is on the metal nano-particle layer on the semiconductor layer, excited the metallic surface plasma, with incident light generation resonant reaction, thereby strengthened the scattering of light effect, made the combined efficiency of electron hole pair be greatly improved, and then improved the detection performance of surveying light.
The above only is preferred embodiment of the present utility model, and is in order to limit the utility model, not all within spirit of the present utility model and principle, any modification of doing, is equal to replacement, improvement etc., all should be included within the protection range of the present utility model.
Claims (5)
1. semiconductor detector, described detector comprises substrate, stack gradually at the resilient coating on the described substrate and plain gallium nitride layer and be located at two electrodes on the described plain gallium nitride layer, it is characterized in that, described plain gallium nitride layer is provided with metal nano-particle layer, and the metal nanoparticle in the described metal nano-particle layer is spaced apart.
2. detector according to claim 1 is characterized in that, described metal nanoparticle is the aluminum metal nano particle.
3. detector according to claim 1 is characterized in that, described electrode is nickel/golden metal pad.
4. detector according to claim 1 is characterized in that, described resilient coating is the gallium nitride resilient coating.
5. detector according to claim 1 is characterized in that, described substrate is Sapphire Substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220690685 CN203165903U (en) | 2012-12-12 | 2012-12-12 | Semiconductor detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220690685 CN203165903U (en) | 2012-12-12 | 2012-12-12 | Semiconductor detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203165903U true CN203165903U (en) | 2013-08-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220690685 Expired - Lifetime CN203165903U (en) | 2012-12-12 | 2012-12-12 | Semiconductor detector |
Country Status (1)
| Country | Link |
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| CN (1) | CN203165903U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952967A (en) * | 2015-05-06 | 2015-09-30 | 浙江大学 | ZnO-based thin-film transistor ultraviolet detector and production method thereof |
| CN106024971A (en) * | 2016-05-28 | 2016-10-12 | 复旦大学 | Single selenium micron tube photoelectric detector, and preparation method and responsivity reinforcement method therefor |
| CN109713058A (en) * | 2017-10-25 | 2019-05-03 | 中国科学院物理研究所 | The gallium oxide ultraviolet detector and its preparation method and application of surface phasmon enhancing |
-
2012
- 2012-12-12 CN CN 201220690685 patent/CN203165903U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952967A (en) * | 2015-05-06 | 2015-09-30 | 浙江大学 | ZnO-based thin-film transistor ultraviolet detector and production method thereof |
| CN106024971A (en) * | 2016-05-28 | 2016-10-12 | 复旦大学 | Single selenium micron tube photoelectric detector, and preparation method and responsivity reinforcement method therefor |
| CN109713058A (en) * | 2017-10-25 | 2019-05-03 | 中国科学院物理研究所 | The gallium oxide ultraviolet detector and its preparation method and application of surface phasmon enhancing |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130828 |
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| CX01 | Expiry of patent term |