CN106024971A - Single selenium micron tube photoelectric detector, and preparation method and responsivity reinforcement method therefor - Google Patents
Single selenium micron tube photoelectric detector, and preparation method and responsivity reinforcement method therefor Download PDFInfo
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- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 239000011669 selenium Substances 0.000 title claims abstract description 70
- 229910052711 selenium Inorganic materials 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 230000002787 reinforcement Effects 0.000 title abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000002105 nanoparticle Substances 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 4
- 239000010931 gold Substances 0.000 claims description 33
- 230000003595 spectral effect Effects 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 239000008187 granular material Substances 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 3
- 239000007787 solid Substances 0.000 abstract 1
- 230000004043 responsiveness Effects 0.000 description 10
- 238000011017 operating method Methods 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 7
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 238000011160 research Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011162 core material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XILIYVSXLSWUAI-UHFFFAOYSA-N 2-(diethylamino)ethyl n'-phenylcarbamimidothioate;dihydrobromide Chemical compound Br.Br.CCN(CC)CCSC(N)=NC1=CC=CC=C1 XILIYVSXLSWUAI-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910007674 ZnO—Ga2O3 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 229910052961 molybdenite Inorganic materials 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003342 selenium Chemical class 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0272—Selenium or tellurium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical fields of materials and photoelectric devices, and specifically to a single selenium micron tube photoelectric detector and a preparation method and a responsivity reinforcement method therefor. According to the preparation method, an evaporation-transfer-growth method is adopted; the t-selenium hexagonal micron tube structure with the length of 0.1-5mm and the width of 1-30[mu]m is synthesized; the prepared micron tubes are separated to obtain the single selenium micron tube; and then the single selenium micron tube is transferred to a solid substrate to establish the photoelectric device. The single selenium micron tube photoelectric device has an excellent ultraviolet-visible range photoelectric detection performance and millisecond-level rapid response time; Au nanoparticles are sputtered on the surface of the selenium micron tube photoelectric device by a small-sized ion sputtering device; the improvement of the responsivity from 300nm to 700nm is realized through surface plasma resonance; the complex process of the conventional photoelectric device is overcome, and the rapid establishment of the photoelectric device can be realized; and meanwhile, the broad spectrum responsivity reinforcement method by using the Au nanoparticles can be widely applied to the broad spectrum detectors.
Description
Technical field
The invention belongs to material and photoelectric device technical field, be specifically related to a kind of high performance wide spectral light of selenium micron tube
The method that electric explorer and preparation method thereof and wide range Photoresponse strengthen.
Background technology
Semiconductor photo detector is a kind of important optoelectronic sensor, and its ultimate principle is when external light source is irradiated to
During this device, in device quasiconductor can absorbing light son energy and cause the electron transition in quasiconductor valence band to conduction band, shape
Become nonequilibrium carrier, cause illuminated material electric conductivity to change.After at device two ends plus certain bias, device
Electric current in loop significantly increases due to the reduction of electrical conductivity.Semiconductor optoelectronic detection is divided into special wave band detector and wide light
Spectrum detector (X. Hu, X. Zhang, W. Yang, Y. Xie,Adv. Funct. Mater. 2014, 24,
7373).Special wave band detector is mainly used in specific wavelength, such as solar blind ultraviolet detector and is only operated in 220 ~ 280
The specific band of nm.Wide spectral detector then can have photoelectric respone in wider spectral region, therefore can apply
In a series of fields such as optic communication, display, medical treatment, environment.
In recent years, the research of photodetection achieves and payes attention to greatly and development rapidly.Research worker is based on different
Semi-conducting material develops diversified semiconductor photo detector.Such as based on ZnO-Ga2O3The day blind ultraviolet of micro wire
Detector (B. Zhao, F. Wang, X. Fang, D. Zhao, Nano Lett. 2015,15,3988), based on
MoS2(O. Lopez-Sanchez, D. Lembke, A. Kis, Nat.Nanotechnol. 2013,8,497),
CdSe(Y. Jiang, W.J. Zhang, X. Fan, S.T. Lee,Adv. Funct. Mater. , 2007, 17,
1795.), In2Se3(T. Zhai, X. Fang, J. Yao, Y. Bando, Acs Nano2010,4,1596) and
Organic calcium perovskite like structure (Y. Guo, C. Liu, H. Tanaka, E. Nakamura,J. Phys. Chem. Lett.
2015,6,535.) wide spectral light electric explorer.But current detector to have expensive process loaded down with trivial details, working (machining) efficiency is low,
Instability, the shortcomings such as reaction rate is low.
Elemental selenium is typically considered a kind of ideal photodetection material.Selenium material have from outside to visible extensively
The response of spectrum, is therefore normally used as the core material of the wide spectral detector of ultraviolet-visible.But, selenium electric explorer
Responsiveness usually ratio is relatively low.Responsiveness Enhancement Method based on metal nanoparticle plasma resonance principle becomes research in recent years
Focus.But research emphasis is concentrated mainly on the Selective long-range DEPT of spectrum, wide spectrum strengthens and is the most extremely badly in need of.
Summary of the invention
It is an object of the invention to provide a kind of technique to be simple and convenient to operate, there is excellent wide spectrographic detection performance, have
Novel single selenium micron tube photodetector of fast reaction speed and preparation method thereof.
The present invention also provides for the preparation method with the selenium micron tube of good crystallinity and regular morphology.
The present invention provides has good universality, the preparation method of the Au nano-particle that simple to operate, technique is controlled.
The present invention provides the method that the photodetection degree of wide spectrum based on Au nanoparticle strengthens, and has good general
Adaptive,
The novel selenium micron tube photoelectric detector that the present invention provides, is using selenium powder as raw material, utilizes in tube furnace one
At fixed temperature and locality condition, use the technology of evaporation-transfer-growth, prepare selenium micron tube structure, and isolating
Construct the photodetector of the function admirable that indium electrode is formed at its two ends after single micron tube.This selenium micron tube photodetection
Device, its core parts be joint length be 0.1 ~ 5 mm, width in 1 ~ 30 μm, cross section be hexagonal selenium micron tube knot
Structure.
The preparation method of the novel selenium micron tube photodetector that the present invention provides, specifically comprises the following steps that
(1) prepared by the growth of selenium micron tube structure
A certain amount of selenium powder is placed in quartz boat and is positioned over the center of 1m tube furnace, hangs down at distance selenium powder 25 ~ 30cm
Directly place the SiO cleaned up2/ Si or glass substrate；First at the N of 200 ~ 300 sccm flow velocitys2Or under the conditions of Ar,
Tube furnace central temperature is heated to 300 ~ 350 DEG C from room temperature in 30 ~ 120 min, and insulation 180 under this temperature conditions ~
720 min；In insulating process, N2Or Ar remains that constant speed flows to substrate with the selenium steam that will evaporate from selenium source
Transfer on growth substrate；After being incubated, make central temperature naturally cool to room temperature from maximum temperature, take out substrate, at base
Sheet surface obtains the selenium micron tube that degree of crystallinity is good；
(2) the constructing of selenium micron tube photodetector
Substantial amounts of selenium micron tube growth obtained isolates single selenium micron tube, and transfers on the glass substrate of cleaning；?
Single selenium micron tube two ends are about the indium granule of 0.3 ~ 1 mm by pressing diameter, form " metal electrode-partly lead
Body-metal electrode " photodetector of structure.
The novel selenium micron tube photoelectric detector that the present invention proposes, has a characteristic that
Under the irradiation and certain bias of external light source, in device, the resistance of selenium micron tube drastically declines, and causes device two ends to be examined
The electric current measured significantly rises, and photoelectric current can reach 1 ~ 10 na, and photoelectric current can reach 20 ~ 80 times with the ratio of dark current.
Device has the fast-response energy of excellence.Under the irradiation of pulse laser, its rising and falling time sum 30 ms with
Under.This device this there is the response of wide spectrum, under the light source of 300 ~ 700 nm irradiates, there is good optical responsivity, reach 8
Preparation is simple for ~ 20 mA/W, material and device, it is not necessary to main equipment.
The wide spectral photoresponse degree Enhancement Method that the present invention provides, is with compact particle sputter as equipment, and above-mentioned selenium is micro-
Based on mitron photodetector, utilize the mode of ion sputtering, form Au nano-particle at selenium micron tube device surface, it is achieved
The optical responsivity of wide spectrum strengthens, and it specifically comprises the following steps that
(1) formation of ultrathin Au films
Selenium micron tube detector obtained above is positioned in the cavity of ion sputtering instrument, places gold target, vacuum is evacuated to 0.1
~0.2 mbar；Being maintained at this vacuum, in air atmosphere, the air plasma in ion sputtering instrument clashes into gold target and incites somebody to action
Gold atom transfers to the surface of selenium micron tube, forms layer of Au film；Controlling sputtering current is 2 ~ 4 mA, sputtering time is 60 ~
210s, to control different Au film thicknesses；After having sputtered, stop evacuation, and slowly the pressure of cavity is risen to normal pressure；
(2) formation of Au granule
After the surface of selenium micron tube forms layer of Au film, place it in the baking oven of 80 ~ 100 DEG C, under air conditions
Annealing 3 ~ 5 min, make Au film agglomerate into Au nano-particle；After having annealed, device is down to naturally room temperature.
The Au nanoparticle that the inventive method is formed, its distribution of sizes is between 10 ~ 50 nm, on the surface of selenium micron tube
It is uniformly distributed, and there is good tack.
Proposed by the invention utilizes ion sputtering method the method forming Au nano-particle of annealing, and has following spy
Point:
Compared with not at the device of surface recombination Au nano-particle, the light of the selenium micron tube photodetector of compound Au nano-particle
Responsiveness significantly improves, and in the broad spectrum between 300 ~ 700 nm, loudness improves up to 600% ~ 800%.The letter of this method
Single easy, there is good universality, can apply in other wide spectral light electric explorer.
The novel selenium micron tube photoelectric device that the present invention proposes can be applied to light lead to as wide spectral light electric transducer
The fields such as letter, display, medical treatment, environment.
The wide spectral responsivity Enhancement Method that the present invention proposes, can apply in various wide spectral light electric explorer, and
Further apply the fields such as optic communication, display, medical treatment, environment.
Accompanying drawing explanation
Fig. 1 is selenium micron tube grower schematic diagram.
Fig. 2 is the microcosmic scanning electron microscope pattern of selenium micron tube.
Fig. 3 is the spectral responsivity curve of selenium micron tube photodetector.
Fig. 4 is the device quick response curve under pulsed laser irradiation.
Fig. 5 is the spectral responsivity curve before and after different sputtering time Au nano-particle reinforcement.
Detailed description of the invention
Below by specific embodiment, further illustrate present disclosure, in order to be best understood from present disclosure and
Unrestricted protection scope of the present invention.
The selenium micron tube device performance that the present invention prepares is characterized as below:
The microstructure of selenium micron tube is observed by the Sigma field emission scanning electron microscope (FESEM) of Zeiss company and is obtained.
The photoelectric properties of selenium micron tube device are recorded by the 4200-SCS semiconductor characterisation instrument of Keithley company.
Each test is carried out, except as otherwise noted the most at ambient conditions.
Embodiment 1, the synthesis of selenium micron tube
Take the selenium powder that 1g purity is 99.95% in quartz boat, be placed in the center of 1m tube furnace, vertical at distance selenium powder 25cm
Place clean SiO2/ Si substrate.N at 300 sccm flow velocitys2Under the conditions of in 55 min tube furnace central temperature from room
Temperature is heated to 300 DEG C, and is incubated 720 min under this temperature conditions.N in insulating process2Remain that constant speed is from selenium
Source flows to SiO2/ Si substrate is with on the selenium steam-transfer that will evaporate to growth substrate.After being incubated, central temperature is from the highest
Temperature naturally cools to room temperature.By SiO2/ Si substrate takes out, and can obtain, at substrate surface, the selenium micron tube that degree of crystallinity is good.
Repeat above operating procedure, by SiO2/ Si substrate is positioned over away from selenium powder 28cm, flow velocity is reduced to 250 simultaneously
Sccm, can be similar to product.
Repeat above operating procedure, gas flow rate is increased by 50 sccm, product can be similar to.
Repeat above operating procedure, holding temperature is raised 30 DEG C, and temperature retention time is reduced to 240 min simultaneously, can
Product must be similar to.
Repeat above operating procedure, only temperature retention time is reduced to 240 min, the selenium micron tube knot that size is less can be obtained
Structure.
Repeat above operating procedure, just SiO2/ Si substrate replaces with glass substrate, can be similar to product.
Prepared by embodiment 2, Au nano-particle
Prepared selenium micron tube detector is positioned in the cavity of ion sputtering instrument, and vacuum is evacuated to 0.15 mbar, and protect
Hold in this vacuum.Then sputtering current is adjusted to 2 mA, and sputtering time is set to 150 s.In air atmosphere, ion sputtering
Air plasma in instrument clashes into gold target and gold atom is transferred to the surface of selenium micron tube.After having sputtered, stop taking out very
The pressure of cavity is also slowly risen to normal pressure by sky.Then anneal in the baking oven of 90 DEG C under air conditions 3 min by it, makes
Obtain above-mentioned Au film and agglomerate into Au nano-particle.After having annealed, device is down to naturally room temperature.
Repeating above operating procedure, the vacuum in sputtering cavity is adjusted to 0.1 mbar, sputtering time is adjusted to 210s, can
Product must be similar to.
Repeat above operating procedure, sputtering current is adjusted to 4 mA and vacuum is adjusted to 0.1 mbar, product can be similar to
Thing.
Repeating above operating procedure, anneal under the conditions of 90 DEG C 5 min, can be similar to product.
Embodiment 3, selenium micron tube photoelectric properties are tested
On the basis of preparing selenium micron tube, single micron tube is transferred in glass substrate, and presses respectively at two ends
Press In electrode, form the photodetector of " metal electrode-quasiconductor-metal electrode " structure.Pass through photoelectricity test subsequently
System, under conditions of 5V biases and do not has illumination, the dark current of device is about 60 pA, is 350nm, 450nm at wavelength,
Under the illumination condition of 610nm, photoelectric current is respectively 1.66 nA, 2.53 nA, 1.78 nA, all has the raising of about 30 times.At arteries and veins
Under the irradiation of impulse light, raising and lowering speed is respectively 0.32 ms and 23.02 ms.Additionally, device 300 ~ 700 nm it
Between all have good responsiveness, when 610nm, responsiveness is the highest, according to formula:R λ =(I light - I dark )/P λ S(I light : light
Electric currentI dark : dark current,P λ : specific wavelength optical power density,S: effectively illuminating area) response when can calculate 610 nm
Degree is about 19 mA/W, shows the photoelectric respone in the wide spectral region of this device.
Embodiment 4, Au nano-particle realize responsiveness to be strengthened
On the basis of preparing selenium micron tube photodetector, measure the responsiveness obtaining its 300 ~ 700 nm.Then press
According to the method in embodiment 2, controlling sputtering current and be adjusted to 2 mA, sputtering time is 150 s, 90 DEG C of annealing 3 min, micro-at selenium
The surface recombination equally distributed Au nano-particle of mitron, measures the device after compound Au nano-particle again at 300 ~ 700 nm
Responsiveness, responsiveness is significantly improved, response increase rate between 600% ~ 800%.
Claims (4)
1. the preparation method of a single selenium micron tube structure photodetector, it is characterised in that specifically comprise the following steps that
(1) prepared by the growth of selenium micron tube structure
A certain amount of selenium powder is placed in quartz boat and is positioned over the center of 1m tube furnace, hangs down at distance selenium powder 25 ~ 30cm
Directly place the SiO cleaned up2/ Si or glass, as growth substrate；N at 200 ~ 300 sccm flow velocitys2Or Ar condition
Under, in 30 ~ 120 min, tube furnace central temperature is heated to 300 ~ 350 DEG C from room temperature, and is incubated under this temperature conditions
180~720 min；In insulating process, N2Or Ar remains that constant speed flows to substrate with the selenium that will evaporate from selenium source
Steam-transfer is on growth substrate；After being incubated, make central temperature naturally cool to room temperature from maximum temperature, take out substrate,
The selenium micron tube that degree of crystallinity is good is obtained at substrate surface；
(2) the constructing of selenium micron tube photodetector
Substantial amounts of selenium micron tube growth obtained isolates single selenium micron tube, and transfers on the glass substrate of cleaning；?
Single selenium micron tube two ends are about the indium granule of 0.3 ~ 1 mm by pressing diameter, form " metal electrode-partly lead
Body-metal electrode " photodetector of structure.
2. the single selenium micron tube photodetector prepared by preparation method described in claim 1, it is characterised in that
Core parts are single selenium micron tube, a length of 0.1 ~ 5 mm of single selenium micron tube, and width is in 1 ~ 30 μm, and cross section is six limits
Shape.
Single selenium micron tube photodetector the most as claimed in claim 2, it is characterised in that have between 300 ~ 700 nm
Wide spectral light electroresponse.
4. the wide spectral responsivity Enhancement Method of a micron tube photodetector, it is characterised in that specifically comprise the following steps that
(1) formation of ultrathin Au films
Selenium micron tube detector is positioned in the cavity of ion sputtering instrument, places gold target, vacuum is evacuated to 0.1 ~ 0.2 mbar；
Being maintained at this vacuum, in air atmosphere, the air plasma in ion sputtering instrument clashes into gold target and is shifted by gold atom
To the surface of selenium micron tube, form layer of Au film；Controlling sputtering current is 2 ~ 4 mA, and sputtering time is 60 ~ 210s, to control
Different Au film thicknesses；After having sputtered, stop evacuation, and slowly the pressure of cavity is risen to normal pressure；
(2) formation of Au granule
After the surface of selenium micron tube forms layer of Au film, place it in the baking oven of 80 ~ 100 DEG C, under air conditions
Annealing 3 ~ 5 min, make Au film agglomerate into Au nano-particle；After having annealed, device is down to naturally room temperature.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107344241A (en) * | 2017-08-22 | 2017-11-14 | 西安交通大学 | A kind of high purity magnesium powder preparation method |
| CN108878581A (en) * | 2018-06-16 | 2018-11-23 | 复旦大学 | Wearable stretchable spring like photoelectric detector of one kind and preparation method thereof |
| CN109037372A (en) * | 2018-07-20 | 2018-12-18 | 大连民族大学 | One kind is based on molybdenum oxide micro belt/p-type Si multiband light response device and preparation method thereof |
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