CN109216171A - A method of reducing wide band gap semiconductor device ohmic contact resistance - Google Patents
A method of reducing wide band gap semiconductor device ohmic contact resistance Download PDFInfo
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- CN109216171A CN109216171A CN201710527475.XA CN201710527475A CN109216171A CN 109216171 A CN109216171 A CN 109216171A CN 201710527475 A CN201710527475 A CN 201710527475A CN 109216171 A CN109216171 A CN 109216171A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
Abstract
The invention discloses a kind of methods for reducing wide band gap semiconductor device ohmic contact resistance, wherein, the material of the wide band gap semiconductor device is iii-v semiconductor material with wide forbidden band, the material successively includes substrate, buffer layer, channel layer and alloy barrier layer from the bottom to top, it the described method comprises the following steps: step 1, deposit passivation layer；Step 2 coats photoresist, and forms photoresist window；Step 3, Etch Passivation, and form passivation layer window；Step 4, coated with nano ball；Step 5 forms nano grooves；Step 6 coats photoresist, and forms photoresist window；Step 7, electron beam evaporation or magnetron sputtering multiple layer metal；Step 8, the removing of multiple layer metal；Step 9, rapid thermal annealing form Ohmic contact.The contact area of electrode metal and wide bandgap semiconductor is significantly greatly increased in method of the invention, reduces the ohmic contact resistance of wide band gap semiconductor device, enhances device performance, improves process efficiency, reduces process costs.
Description
Technical field
The present invention relates to Wide Bandgap Semiconductor Technology fields, are carved more particularly to one kind based on nanosphere lithography and plasma
The method of the reduction iii-v wide band gap semiconductor device ohmic contact resistance of erosion technology.
Background technique
Iii-v wide band gap semiconductor device have wide direct band gap, high electronics saturation drift velocity, high breakdown field strength,
The advantages that anticorrosive and radiation hardness.Compared with silicon-based devices, the switching speed of wide band gap semiconductor device is high, and conducting resistance is small,
Power density greatly promotes, and can work in hot environment.The quality of the Ohmic contact of wide band gap semiconductor device is largely
On determine the working performance of device.Realize that the common method of the Ohmic contact of wide-bandgap power devices is included in 850- at present
Fast speed heat is carried out to multiple layer metal at 900 DEG C (usually Ti/Al/X/Au, wherein X is barrier metal, including Ni, Pt or Mo)
Annealing.Main deficiency existing for the production method of the type Ohmic contact is: multiple layer metal and semiconductor material with wide forbidden band connect
Contacting surface product is same or less with ohmic contact regions area, and the optimization of ohmic contact resistance rate is mainly adjusted by multiple layer metal
Thickness combination is realized with annealing conditions, but this method generates ohmic contact resistance and is typically greater than 0.5 Ω mm.
Summary of the invention
To solve the above-mentioned problems, the invention discloses a kind of sides for reducing wide band gap semiconductor device ohmic contact resistance
Method, this method utilize nanosphere lithography technology, can be primary in device Ohm contact electrode region without using electron beam exposure
A large amount of nanometer scale lithography windows are formed, and form groove using plasma etching, electrode metal and broad stopband is significantly greatly increased
The contact area of semiconductor reduces the ohmic contact resistance of device.
Present invention technical solution used for the above purpose is:
A method of reducing wide band gap semiconductor device ohmic contact resistance, which is characterized in that partly lead the broad stopband
The material of body device is iii-v semiconductor material with wide forbidden band, which successively includes substrate, buffer layer, channel from the bottom to top
Layer and alloy barrier layer, the described method comprises the following steps:
Step 1, deposit passivation layer
Si is deposited on the alloy barrier layer3N4Or SiO2Passivation layer；
Step 2 coats photoresist, and forms photoresist window
Photoresist is coated on the passivation layer that step 1 is deposited, and Ohm contact electrode region is removed by photoetching development
Photoresist, formed photoresist window；
Step 3, Etch Passivation, and form passivation layer window
Etch Passivation completely removes the passivation layer in Ohm contact electrode region, forms passivation layer window, then removes
Photoresist；
Step 4, coated with nano ball
With the suspension of nanosphere the surface of the resulting iii-v semiconductor material with wide forbidden band of step 3 coat single layer or
Double-layer nanometer ball；
Step 5 forms nano grooves
The surface of the iii-v semiconductor material with wide forbidden band obtained of etch step four forms nano grooves, wherein by institute
Single or double layer nanosphere is stated as etch mask plate, plasma passes through the III- obtained of nanometer sphere gap etch step four
The surface of V race semiconductor material with wide forbidden band, to form a large amount of nano grooves in the Ohm contact electrode region etch, then
Remove the nanosphere on surface；
Step 6 coats photoresist, and forms photoresist window
Photoresist is coated on the surface of step 5 iii-v semiconductor material with wide forbidden band obtained, and passes through photoetching
Photoresist in development removal Ohm contact electrode region, forms photoresist window；
Step 7, electron beam evaporation or magnetron sputtering multiple layer metal
On the surface of the resulting iii-v semiconductor material with wide forbidden band of step 6, splashed using electron beam evaporation or magnetic control
Multiple layer metal is penetrated, in Ohm contact electrode region, the multiple layer metal is directly contacted with the alloy barrier layer；
Step 8, the removing of multiple layer metal
By the photoresist and multilayer outside the Ohm contact electrode region of iii-v semiconductor material with wide forbidden band obtained by step 7
Metal-stripping；
Step 9, rapid thermal annealing form Ohmic contact
Using rapid thermal annealing, the rapid thermal annealing 30-60s under 600-900 DEG C of nitrogen atmosphere forms Ohmic contact.Root
According to some embodiments of the present invention, the deposit passivation layer of step 1 is by plasma enhanced chemical vapor deposition or induction coupling
Close what plasma chemical vapor deposition carried out, the passivation layer thickness is 20~100nm.
According to some embodiments of the present invention, the material of the nanosphere be polyphenyl hexene, silica or silicon, it is a diameter of
20~100nm, the suspension mass percent of the nanosphere are 5% to 40%, and solvent is water or ethyl alcohol.
According to some embodiments of the present invention, the diameter of the nanosphere is equal to passivation layer thickness.
According to some embodiments of the present invention, spin-coating method coated with nano ball is used in step 4, revolving speed is 1000 to 8000
Rpm.
According to some embodiments of the present invention, step 2 is with photoresist described in step 6 with a thickness of 0.5-1.5 μm.
According to some embodiments of the present invention, the fast speed heat under 800 DEG C of nitrogen atmospheres of the rapid thermal annealing in step 9 is moved back
Fiery 30s.
According to some embodiments of the present invention, the depth of the resulting nano grooves of step 5 is less than, greater than or equal to institute
The thickness of barrier layer is stated, the depth of preferred nano grooves is the half of the thickness of the barrier layer.
According to some embodiments of the present invention, the etching using plasma etching in step 5, including for etching width
Gaseous plasma etching of the chloro of bandgap semiconductor material containing chlorine and the oxygroup for modifying nanosphere diameter dimension are oxygen-containing
Or fluorine-based fluorine-containing plasma etching.
According to some embodiments of the present invention, multiple layer metal described in step 7 is Ti/Al/Ni/Au or Ti/Al/Ni/
Four layers of metal of TiN, thickness are followed successively by 30/120/50/50nm, and wherein Ni metal can be replaced Ti, Mo or Pt；Or it is described
Multiple layer metal may be three layers of Ti/Al/TiN metal, and thickness is followed successively by 30/120/50nm.
According to some embodiments of the present invention, the material of the substrate is SiC, Al2O3Or Si, the buffer layer and channel
The material of layer is AlN, GaN or AlGaN etc., and the material of the barrier layer is AlGaN, AlN, InAlN or InAlGaN.
The invention has the benefit that
A kind of method of reduction wide band gap semiconductor device ohmic contact resistance of the invention, utilizes single or double layer nanometer
Ball can be in device Ohm contact electrode region without using electron beam exposure by photoetching and plasma etching as exposure mask
A large amount of nanoscale grooves are once formed, the contact area of electrode metal and wide bandgap semiconductor is significantly greatly increased, reduce broad stopband
The ohmic contact resistance of semiconductor devices enhances device performance, improves process efficiency, reduces process costs.
A kind of method of reduction wide band gap semiconductor device ohmic contact resistance of the invention, is widely portable to various pipes
The manufacture of modern age semiconductor devices, and with traditional silicon technology, LED technique and high electron mobility transistor process compatible.
This method can also be applied on silicon-based devices or other devices, equally because of the work that Ohmic contact area is significantly greatly increased that it has
With the ohmic contact resistance of silicon-based devices can be reduced.
Detailed description of the invention
With reference to the accompanying drawings and specific embodiment the present invention is described in further detail:
Fig. 1 is a kind of process flow chart of the method for reduction wide band gap semiconductor device ohmic contact resistance of the invention.
Fig. 2 is a kind of semiconductor material with wide forbidden band, including material is SiC, Al2O3Or the substrate 1 of Si, material be GaN or
The buffer layer and channel layer 2 of AlGaN etc., the III-V group semi-conductor materials such as material AlGaN, AlN, InAlN or InAlGaN
Alloy barrier layer 3.
Fig. 3 is deposition Si3N4Or SiO2Schematic diagram after passivation layer, including Si3N4Or SiO2Passivation layer 4.
Fig. 4 is the schematic diagram coated after photoresist and the photoresist in photoetching development removal Ohm contact electrode region, including
Photoresist 5, Ohm contact electrode region 6.
Fig. 5 is the schematic diagram after the passivation layer in etching removal Ohm contact electrode region.
Fig. 6 is the schematic diagram coated after single layer nanosphere, including material is polyphenyl hexene (PS), silica (SiO2) or silicon
(Si) nanosphere 7.
Fig. 7 is the top view after coating single layer nanosphere in Ohm contact electrode region.
Fig. 8 is the top view in gap between ball after coating single layer nanosphere in Ohm contact electrode region, including signal
Gap 8 between ball.
Fig. 9 is the schematic diagram coated after double-layer nanometer ball.
Figure 10 is the top view after coating double-layer nanometer ball in Ohm contact electrode region.
Figure 11 is the top view in gap between ball after coating double-layer nanometer ball in Ohm contact electrode region.
Figure 12 is the schematic diagram of formation nano grooves after structure shown in plasma etching Fig. 6, including nano grooves 9.
Figure 13 is the schematic diagram of formation nano grooves after structure shown in plasma etching Fig. 9.
Figure 14 is the schematic diagram removed after nanosphere.
Figure 15 is to coat the schematic diagram after photoresist again.
Figure 16 is the schematic diagram after the photoresist in photoetching development removal Ohm contact electrode region.
Figure 17 is the schematic diagram after electron beam evaporation or magnetron sputtering multiple layer metal, including material is Ti/Al/Ni/Au,
Four layers of metal 10 of Ti/Al/Ni/TiN, wherein Ni metal can be replaced Ti, Mo or Pt；Or Ti/Al/TiN three-layer metal
10。
Figure 18 is the schematic diagram after metal-stripping.
Specific embodiment
The present invention is described in further details below in conjunction with specific embodiments and the drawings.
Embodiment 1
Step 1, deposit passivation layer, material Si3N4
One layer is deposited on semiconductor material with wide forbidden band surface using PECVD (plasma enhanced chemical vapor deposition)
The Si of 100nm3N4Passivation layer；
Step 2 coats photoresist, and the photoresist in photoetching development removal Ohm contact electrode region
Photoresist AZ5214E is coated on the passivation layer that step 1 is deposited, and is exposed by 90 DEG C of front baking 90s, ultraviolet light 6s
Light, 2.38% tetramethyl ammonium hydroxide solution 45s development, removes the photoresist in Ohm contact electrode region, forms photoresist
Window, and 30s is dried after 110 DEG C；
Step 3, Etch Passivation remove the passivation layer in Ohm contact electrode region, remove photoresist
Using RIE (reactive ion etching) Etch Passivation, working gas CF4With O2, radio-frequency power 100W, the time
60s completely removes the Si that step 2 is formed by photoetching window3N4Passivation layer forms passivation layer window, hereafter substrate exists
Ultrasound removal photoresist in acetone；
Step 4, coated with nano ball, material are silica (SiO2)
Use the silica (SiO of diameter 100nm2) nanosphere suspension, solvent is water, mass ratio 20%.Using
Spin-coating method, 30s under 8000 rpms of revolving speeds, step 3 substrate surface coat mono-layer oxidized silicon nanosphere；
Step 5 etches wide bandgap semiconductor surface, forms nano grooves
Using the substrate obtained of RIE (reactive ion etching) etch step four.By single layer nanosphere as etch mask
Plate, working gas Cl2With BCl3, radio-frequency power 50W, time 60s.Plasma can etch broad stopband by nanometer sphere gap
Semiconductor material surface forms a large amount of nano grooves in Ohm contact electrode region etch.Hereafter using ultrasonic cleaning removal table
Face nanosphere；
Step 6 coats photoresist, and the photoresist in photoetching development removal Ohm contact electrode region
Photoresist is coated on step 5 substrate obtained, by front baking identical with step 2 condition, exposure, is shown
Shadow, rear baking, remove the photoresist in Ohm contact electrode region, form photoresist window；
Step 7, electron beam evaporation deposition multiple layer metal
Using four layers of Ti/Al/Ni/Au metal of electron beam evaporation deposition, Ohm contact electrode region directly and broad stopband
Semiconductor material surface contact；
Step 8, the removing of multiple layer metal
Substrate obtained by step 7 is sequentially placed into acetone and impregnates 30min, acetone ultrasound 2min, isopropanol ultrasound 2min,
Deionized water cleaning removes the photoresist outside Ohm contact electrode region with multiple layer metal；
Step 9, rapid thermal annealing form Ohmic contact
Using rapid thermal annealing, the rapid thermal annealing 45s under 850 DEG C of nitrogen atmospheres forms wide band gap semiconductor device Europe
Nurse contact.
Embodiment 2
Step 1, deposit passivation layer, material SiO2
One is deposited on semiconductor material with wide forbidden band surface using ICPCVD (inductively coupled plasma chemical vapor deposition)
The SiO of layer 50nm2Passivation layer；
Step 2 coats photoresist, and the photoresist in photoetching development removal Ohm contact electrode region
Photoresist AZ5214E is coated on the passivation layer that step 1 is deposited, and is exposed by 90 DEG C of front baking 90s, ultraviolet light 6s
Light, 2.38% tetramethyl ammonium hydroxide solution 45s development, removes the photoresist in Ohm contact electrode region, forms photoresist
Window, and 30s is dried after 110 DEG C；
Step 3, Etch Passivation remove the passivation layer in Ohm contact electrode region, remove photoresist
Using ICPRIE (sense coupling) Etch Passivation, working gas SF6With O2, radio-frequency power
120W, time 60s completely remove the SiO that step 2 is formed by photoetching window2Passivation layer forms passivation layer window, hereafter
By substrate, ultrasound removes photoresist in acetone；
Step 4, coated with nano ball, material are polyphenyl hexene (PS)
Using the suspension of polyphenyl hexene (PS) nanosphere of diameter 50nm, solvent is ethyl alcohol, mass ratio 10%.Using
Spin-coating method, 45s under 3000 rpms of revolving speeds, step 3 substrate surface coat the double-deck polyphenyl hexene nanosphere；
Step 5, plasma etching adjust polyphenyl hexene nanometer bulb diameter, plasma etching wide bandgap semiconductor table
Face forms nano grooves
Use RIE (reactive ion etching) working gas for O2, radio-frequency power 50W, time 2min, by polyphenyl hexene
Nanosphere is etched to diameter 30nm, and nanometer sphere gap increases at this time.It is etched using ICPRIE (sense coupling)
Step 4 substrate obtained.By double-layer nanometer ball as etch mask plate, plasma etching working gas is Cl2With BCl3, penetrate
Frequency power 100W, time 60s.Plasma can etch semiconductor material with wide forbidden band surface by nanometer sphere gap, connect in ohm
Touched electrode region etch forms a large amount of nano grooves.To the adjustable nanometer bulb diameter of the plasma etching treatment of nanosphere with
Spacing, and then adjust the width dimensions of nano grooves.Hereafter using ultrasonic cleaning removal nano surface ball；
Step 6 coats photoresist, and the photoresist in photoetching development removal Ohm contact electrode region
Photoresist is coated on step 5 substrate obtained, by front baking identical with step 2 condition, exposure, is shown
Shadow, rear baking, remove the photoresist in Ohm contact electrode region, form photoresist window；
Step 7, multiple layer metal
Using four layers of Ti/Al/Ni/TiN metal of magnetron sputtering plating, Ohm contact electrode region directly with broad stopband half
Conductor material surface contact；
Step 8, the removing of multiple layer metal
Substrate obtained by step 7 is sequentially placed into acetone and impregnates 30min, acetone ultrasound 2min, isopropanol ultrasound 2min,
Deionized water cleaning, by the photoresist and metal-stripping outside Ohm contact electrode region；
Step 9, rapid thermal annealing form Ohmic contact
Using rapid thermal annealing, the rapid thermal annealing 30s under 800 DEG C of nitrogen atmospheres forms wide band gap semiconductor device Europe
Nurse contact.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of method for reducing wide band gap semiconductor device ohmic contact resistance, which is characterized in that the wide bandgap semiconductor
The material of device is iii-v semiconductor material with wide forbidden band, which successively includes substrate, buffer layer, channel layer from the bottom to top
With alloy barrier layer, the described method comprises the following steps:
Step 1, deposit passivation layer
Si is deposited on the alloy barrier layer3N4Or SiO2Passivation layer；
Step 2 coats photoresist, and forms photoresist window
Photoresist is coated on the passivation layer that step 1 is deposited, and the light in Ohm contact electrode region is removed by photoetching development
Photoresist forms photoresist window；
Step 3, Etch Passivation, and form passivation layer window
Etch Passivation completely removes the passivation layer in Ohm contact electrode region, forms passivation layer window, then removes photoetching
Glue；
Step 4, coated with nano ball
Single or double layer is coated on the surface of the resulting iii-v semiconductor material with wide forbidden band of step 3 with the suspension of nanosphere
Nanosphere；
Step 5 forms nano grooves
The surface of the iii-v semiconductor material with wide forbidden band obtained of etch step four forms nano grooves, wherein by the list
As etch mask plate, plasma passes through the iii-v obtained of nanometer sphere gap etch step four for layer or double-layer nanometer ball
Then the surface of semiconductor material with wide forbidden band is gone to form a large amount of nano grooves in the Ohm contact electrode region etch
Except the nanosphere on surface；
Step 6 coats photoresist, and forms photoresist window
Photoresist is coated on the surface of step 5 iii-v semiconductor material with wide forbidden band obtained, and passes through photoetching development
The photoresist in Ohm contact electrode region is removed, photoresist window is formed；
Step 7, electron beam evaporation or magnetron sputtering multiple layer metal
It is more using electron beam evaporation or magnetron sputtering on the surface of the resulting iii-v semiconductor material with wide forbidden band of step 6
Layer metal, in Ohm contact electrode region, the multiple layer metal is directly contacted with the alloy barrier layer；
Step 8, the removing of multiple layer metal
By the photoresist and multiple layer metal outside the Ohm contact electrode region of iii-v semiconductor material with wide forbidden band obtained by step 7
Removing；
Step 9, rapid thermal annealing form Ohmic contact
Using rapid thermal annealing, the rapid thermal annealing 30-60s under 600-900 DEG C of nitrogen atmosphere forms Ohmic contact.
2. the method according to claim 1, wherein the deposit passivation layer of step 1 is to pass through plasma enhancing
What chemical vapor deposition or inductive couple plasma chemical vapor deposition carried out, the passivation layer thickness is 20~100nm.
3. the method according to claim 1, wherein the material of the nanosphere be polyphenyl hexene, silica or
Silicon, a diameter of 20~100nm, the suspension mass percent of the nanosphere are 5% to 40%, and solvent is water or second
Alcohol.
4. according to the method described in claim 3, it is characterized in that, the diameter of the nanosphere is equal to passivation layer thickness.
5. revolving speed is the method according to claim 1, wherein using spin-coating method coated with nano ball in step 4
1000 to 8000 rpms.
6. the method according to claim 1, wherein step 2 is with photoresist described in step 6 with a thickness of 0.5-
1.5μm。
7. the method according to claim 1, wherein the rapid thermal annealing in step 9 is in 800 DEG C of nitrogen atmospheres
Lower rapid thermal annealing 30s.
8. the method according to claim 1, wherein the depth of the resulting nano grooves of step 5 be less than, etc.
In or greater than the barrier layer thickness or the nano grooves depth be the barrier layer thickness half.
9. the method according to claim 1, wherein the etching using plasma in step 5 etches, including
For etching gaseous plasma etching of the chloro of semiconductor material with wide forbidden band containing chlorine and being used to modify nanosphere diameter dimension
Oxygroup is oxygen-containing or fluorine-based fluorine-containing plasma etching.
10. the method according to claim 1, wherein multiple layer metal described in step 7 be Ti/Al/Ni/Au or
Four layers of metal of Ti/Al/Ni/TiN, thickness are followed successively by 30/120/50/50nm, wherein Ni metal can be replaced Ti, Mo or
Pt；Or the multiple layer metal may be three layers of Ti/Al/TiN metal, thickness is followed successively by 30/120/50nm.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109994568A (en) * | 2019-04-22 | 2019-07-09 | 中国工程物理研究院流体物理研究所 | A kind of laser triggering high-power half insulation AlGaN/GaN switch of stack architecture |
| CN110047976A (en) * | 2019-04-30 | 2019-07-23 | 吉林建筑大学 | A kind of preparation method of the quick transistor of solar blind UV |
| CN111128709A (en) * | 2020-01-15 | 2020-05-08 | 桂林理工大学 | Preparation method of Cu-based GaN HEMT gold-free ohmic contact electrode |
| CN112379574A (en) * | 2020-11-23 | 2021-02-19 | 福建中科光芯光电科技有限公司 | Low-cost manufacturing method of terahertz photoconductive antenna with nano electrode |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100218815A1 (en) * | 2009-11-18 | 2010-09-02 | International Business Machines Corporation | Holey electrode grids for photovoltaic cells with subwavelength and superwavelength feature sizes |
| US20120119760A1 (en) * | 2010-11-15 | 2012-05-17 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Perforated contact electrode on vertical nanowire array |
| WO2012091325A2 (en) * | 2010-12-30 | 2012-07-05 | 포항공과대학교 산학협력단 | Method for manufacturing light-emitting diode using nano-structures and light-emitting diode manufactured thereby |
| US20150053929A1 (en) * | 2013-08-22 | 2015-02-26 | Board Of Regents. The University Of Texas System | Vertical iii-v nanowire field-effect transistor using nanosphere lithography |
| CN105118780A (en) * | 2015-07-30 | 2015-12-02 | 中国电子科技集团公司第五十五研究所 | Method of reducing GaN HEMT device ohm contact resistance |
-
2017
- 2017-06-30 CN CN201710527475.XA patent/CN109216171A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100218815A1 (en) * | 2009-11-18 | 2010-09-02 | International Business Machines Corporation | Holey electrode grids for photovoltaic cells with subwavelength and superwavelength feature sizes |
| US20120119760A1 (en) * | 2010-11-15 | 2012-05-17 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Perforated contact electrode on vertical nanowire array |
| WO2012091325A2 (en) * | 2010-12-30 | 2012-07-05 | 포항공과대학교 산학협력단 | Method for manufacturing light-emitting diode using nano-structures and light-emitting diode manufactured thereby |
| US20150053929A1 (en) * | 2013-08-22 | 2015-02-26 | Board Of Regents. The University Of Texas System | Vertical iii-v nanowire field-effect transistor using nanosphere lithography |
| CN105118780A (en) * | 2015-07-30 | 2015-12-02 | 中国电子科技集团公司第五十五研究所 | Method of reducing GaN HEMT device ohm contact resistance |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109994568A (en) * | 2019-04-22 | 2019-07-09 | 中国工程物理研究院流体物理研究所 | A kind of laser triggering high-power half insulation AlGaN/GaN switch of stack architecture |
| CN110047976A (en) * | 2019-04-30 | 2019-07-23 | 吉林建筑大学 | A kind of preparation method of the quick transistor of solar blind UV |
| CN110047976B (en) * | 2019-04-30 | 2020-11-06 | 吉林建筑大学 | Preparation method of solar blind ultraviolet photosensitive transistor |
| CN111128709A (en) * | 2020-01-15 | 2020-05-08 | 桂林理工大学 | Preparation method of Cu-based GaN HEMT gold-free ohmic contact electrode |
| CN112379574A (en) * | 2020-11-23 | 2021-02-19 | 福建中科光芯光电科技有限公司 | Low-cost manufacturing method of terahertz photoconductive antenna with nano electrode |
| CN113284948A (en) * | 2020-12-30 | 2021-08-20 | 南方科技大学 | GaN device and preparation method thereof |
| CN113284948B (en) * | 2020-12-30 | 2022-10-04 | 南方科技大学 | GaN device and preparation method thereof |
| CN114188213A (en) * | 2021-12-06 | 2022-03-15 | 上海稷以科技有限公司 | Method for solving problem of transmission failure of silicon carbide wafer |
| CN114188213B (en) * | 2021-12-06 | 2023-04-07 | 上海稷以科技有限公司 | Method for solving problem of transmission failure of silicon carbide wafer |
| CN114388614A (en) * | 2022-03-22 | 2022-04-22 | 江苏第三代半导体研究院有限公司 | Ohmic contact structure and preparation method and application thereof |
| CN114388614B (en) * | 2022-03-22 | 2022-06-14 | 江苏第三代半导体研究院有限公司 | Ohmic contact structure and preparation method and application thereof |
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