CN202968740U - Single crystal clamping system of zone melting furnace - Google Patents
Single crystal clamping system of zone melting furnace Download PDFInfo
- Publication number
- CN202968740U CN202968740U CN 201220682114 CN201220682114U CN202968740U CN 202968740 U CN202968740 U CN 202968740U CN 201220682114 CN201220682114 CN 201220682114 CN 201220682114 U CN201220682114 U CN 201220682114U CN 202968740 U CN202968740 U CN 202968740U
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- CN
- China
- Prior art keywords
- single crystal
- sleeve
- monocrystalline
- polysilicon
- ball
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000013078 crystal Substances 0.000 title claims abstract description 33
- 238000004857 zone melting Methods 0.000 title claims abstract description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 26
- 229920005591 polysilicon Polymers 0.000 claims abstract description 26
- 230000004941 influx Effects 0.000 claims description 7
- 230000000295 complement effect Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000002994 raw material Substances 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 abstract 3
- 238000011084 recovery Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 210000003739 neck Anatomy 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003723 Smelting Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to a single crystal clamping system of a zone melting furnace. The single crystal clamping system comprises a clamping sleeve A and an inner shaft sleeve, wherein an inner shaft head is arranged in the center of the inner shaft sleeve and is connected with a seed crystal chuck which is used for stretching a single crystal; the clamping sleeve A is conical; the top of the conical clamping sleeve A is open; the single crystal passes through the open center; a narrow-neck end of the single crystal is connected with a seed crystal; a jackscrew hole is formed in a straight-line section which is positioned below a conical tip part of the conical clamping sleeve A; the clamping sleeve A is fixed with the outer part of the inner shaft sleeve through a jackscrew B; a residue blocking plate is sleeved on the inner shaft head which is positioned below the seed crystal chuck; the outer diameter of the residue blocking plate is matched with the inner diameter of the inner shaft sleeve; a polysilicon ball inflow port is formed in the top part of the conical clamping sleeve; and polysilicon balls which are used for supporting the single crystal are uniformly distributed in the space on the inner side of the sleeves and the outer side of the single crystal, and the height direction of the space is from the upper part of the residue blocking plate to the open conical top. The single crystal clamping system of the zone melting furnace has the advantage that the stability of the single crystal in production is improved, the complete recovery efficiency of the single crystal is improved, the loss of raw materials is greatly reduced at the same time, and the production efficiency is improved.
Description
Technical field
The utility model relates to a kind of zone melting furnace monocrystalline grasping system.
Technical background
As everyone knows, the core of modern information technologies and modern electronic technology is semiconductor technology, and the semiconductor silicon single crystal material is most important semiconductor material.Main employing vertical pulling method and zone melting method production in the production process of semiconductor silicon single crystal.Zone-melted silicon single crystal because the relative foreign matter content of its production is low, is the excellent material of making power device.
Along with technical progress, the development of semiconductor silicon material is very fast, and silicon single-crystal is gradually to major diameter, large weight future development.It is the cylindric polycrystal of whole that zone melting method is produced what adopt in the process of silicon single-crystal.Along with the increase of single crystal diameter, in production process, the single weight of silicon single-crystal is over 20 kilograms.Adopt in this case simple monocrystalline clamper to be difficult to realize the stable growth of monocrystalline, also have very large potential safety hazard simultaneously.The process frame chart of produce single crystal (seeing Fig. 1).
Along with the raising gradually of monocrystalline technique, monocrystalline market is gradually to the major diameter future development, and monocrystalline weight also constantly increases simultaneously, and this moment, existing clamper can not satisfy major diameter single crystal to the requirement of its reactive force.
Region of initiation smelting furnace grasping system is simple in structure, is comprised of clamping pin briquetting, clamping pin, briquetting support.Just make outer shaft motionless, interior axle moves downward with the speed stable of 3mm/min, after single crystal growing is long to isometrical 100mm, press the clamping button, gripper sleeve and interior outer shaft move down simultaneously, and the clamping pin is with counterclockwise motion slowly of circular trace, until the clamping pin contacts fully with monocrystalline.Because single-crystal surface is inhomogeneous, this method contacts in a flash with monocrystalline at the clamping pin, the phenomenon that may have certain a bit first to contact contact after all the other 2, thus cause the monocrystalline discontinuity, cause the askew and stream of monocrystalline melting zone.
Summary of the invention
The purpose of this utility model is to provide a kind of zone melting furnace monocrystalline grasping system, this system is to promote monocrystalline stability aborning, with prevent monocrystalline when the normal growth because being subjected to self gravitation and centrifugal forces affect to cause the loss that can not answer, not only improved the complete casting yield of monocrystalline, simultaneously also greatly reduce the loss of raw material, improved production efficiency.
To achieve the above object of the invention, the utility model is by the following technical solutions:
this zone melting furnace monocrystalline grasping system, it comprises: gripper sleeve A, the internal axle sleeve cylinder, interior axle spindle nose is established in described internal axle sleeve cylinder center, interior axle spindle nose is connected with the seed chuck that is used for the stretching monocrystalline, described gripper sleeve A is taper, the vertex of a cone is uncovered, uncovered center is passed through for monocrystalline, thin neck one end of described monocrystalline is connected with seed crystal, the straight-line segment that is positioned at cone tip part below is provided with top wire hole, gripper sleeve A and internal axle sleeve cylinder outside are fixed by jackscrew B, be positioned at that on the axle spindle nose of seed chuck below, cover has skimming plate, the external diameter of skimming plate and internal axle sleeve cylinder internal diameter are complementary, be provided with polysilicon ball influx at the gripper sleeve cone top part, space in the outside of the inboard of the sleeve that is linked to be by gripper sleeve A and internal axle sleeve cylinder and monocrystalline, and the short transverse in this space is that top from skimming plate is to the uncovered polysilicon ball that supports use that all is covered with of the vertex of a cone.
Described to be provided with polysilicon ball influx at the gripper sleeve cone top part be to be connected with the container that holds the polysilicon ball by electrically operated valve, and this container is connected with the furnace wall by union lever.
the utility model has the advantages that: the utility model has been overturned region of initiation smelting furnace grasping system structure, simple 3 clampings are developed into multipoint clamping, the spherical polysilicon ball that is 0.5-1mm by several diameters forms, just make outer shaft motionless equally, interior axle moves downward with the speed stable of 3mm/min, after single crystal growing is long to isometrical 100mm, press the clamping button, flow into the polysilicon ball by vessel in gripper sleeve slowly by throwing clamping process, thereby monocrystalline is fixed, simultaneously on the basis that does not change other operational outfits of zone melting single-crystal stove and processing condition, improve the stability that monocrystalline is in operation.
Description of drawings
Fig. 1: zone melting method monocrystalline technological process of production block diagram
Fig. 2: existing zone melting furnace grasping system structural representation
Fig. 3: gripper sleeve and internal axle sleeve cylinder connection diagram in the utility model
Fig. 4: the connection diagram of skimming plate and interior axle spindle nose in the utility model
Fig. 5: the schematic diagram of carrying polysilicon ball container in the gripper sleeve
Fig. 6: the utility model uses view (the polysilicon ball fills up gripper sleeve)
Flow process shown in Fig. 1 is: first reading task list, carry out subsequently in the following order: the cleaning furnace chamber, seed crystal is installed, polycrystalline is installed, modulation coil, reverberator, shove charge, vacuumize (inflation), wherein, whether qualifiedly need to detect vacuum tightness, after vacuum tightness is qualified, enter the pulling monocrystal operation, enter after isometrical 100mm is long and throw the clamping operation, isometrical maintenance, the blowing out that finishes up subsequently, wherein, if when the askew situation of monocrystalline occurring when throwing the clamping operation, in time blowing out.
In Fig. 2,1 is the clamping pin, and 2 is monocrystalline, and 3 is thin neck, and 4 is seed crystal, and 5 is the internal axle sleeve cylinder, and 6 is interior axle spindle nose, and 7 are clamping pin briquetting, 8 seed chucks, and 9 is gripper sleeve, 10 is jackscrew A.
In Fig. 3, Fig. 4, Fig. 5, Fig. 6,6 is interior axle spindle nose, and 11 is gripper sleeve A, and 13 is the internal axle sleeve cylinder, and 12 is jackscrew B, 2 is monocrystalline, 3 thin necks, and 4 is seed crystal, 8 seed chucks, 14 is skimming plate, 15 is the polysilicon ball, and 16 is container, and 17 is electrically operated valve, and 18 is union lever, and 19 is polysilicon ball influx.
Embodiment
the utility model comprises: gripper sleeve A 11, internal axle sleeve cylinder 13, interior axle spindle nose 6 is established in described internal axle sleeve cylinder center, interior axle spindle nose is connected with the seed chuck 8 that is used for the stretching monocrystalline, described gripper sleeve A 11 is taper, the vertex of a cone is uncovered, uncovered center is passed through for monocrystalline 2, thin neck 3 one ends of described monocrystalline are connected with seed crystal 4, the straight-line segment that is positioned at the below of cone tip part is provided with top wire hole, gripper sleeve A 11 is outside fixing by jackscrew B 12 with internal axle sleeve cylinder 13, be positioned at that on the axle spindle nose of seed chuck below, cover has skimming plate 14, the external diameter of skimming plate 14 and internal axle sleeve cylinder 13 internal diameters are complementary, be provided with polysilicon ball influx 19 at gripper sleeve A 11 cone top parts, space in the outside of the inboard of the sleeve that is linked to be by gripper sleeve A 11 and internal axle sleeve cylinder and monocrystalline, and the short transverse in this space is that top from skimming plate 14 is to the uncovered polysilicon ball 15 that supports use that all is covered with of the vertex of a cone.
Be provided with polysilicon ball influx 19 at gripper sleeve A 11 cone top parts and be connected with the container 16 that holds polysilicon ball 15 by electrically operated valve 17, container 16 is connected with the furnace wall by union lever 18.
Original gripper sleeve 9 (Fig. 2) is pulled down, changed the gripper sleeve A 11 (this sleeve does not affect other operation parts) of the present invention's design, gripper sleeve A 11 passes through jackscrew A 10 and internal axle sleeve cylinder 5 external stabilities (Fig. 3) in vertical extension.
For preventing that the polysilicon ball from entering interior axle and exerting an influence, specialized designs coordinate in the cylindrical skimming plate of axle operation, skimming plate outer dia and internal axle sleeve cylinder inside diameter are complementary, inside diameter and interior axle spindle nose outer dia are complementary, and do not affect laying of seed chuck, this skimming plate is inserted in interior axle spindle nose can realizes (Fig. 4).
The container that holds the polysilicon ball is connected with body of heater (Fig. 5) by union lever, and establishes electrical valve 17 at container exit, by adjusting knob, valve is is slowly opened or closed, and controls the uninterrupted of polysilicon ball.
Adopt the polysilicon ball as the monocrystalline stability support, this polysilicon ball feeding is convenient, and is high temperature resistant, the rear difficult generation impurity that is heated, and can the technique of monocrystalline not impacted.Because the polysilicon ball has mobility, surround monocrystalline is can be fully outer, form multipoint clamping, dissipation of ferees is by the fixing monocrystalline (Fig. 6) of irregular permutation and combination.
Claims (2)
1. zone melting furnace monocrystalline grasping system, it is characterized in that: it comprises: gripper sleeve A, the internal axle sleeve cylinder, interior axle spindle nose is established in described internal axle sleeve cylinder center, interior axle spindle nose is connected with the seed chuck that is used for the stretching monocrystalline, described gripper sleeve A is taper, the vertex of a cone is uncovered, uncovered center is passed through for monocrystalline, thin neck one end of described monocrystalline is connected with seed crystal, the straight-line segment that is positioned at cone tip part below is provided with top wire hole, gripper sleeve A and internal axle sleeve cylinder outside are fixed by jackscrew B, be positioned at that on the axle spindle nose of seed chuck below, cover has skimming plate, the external diameter of skimming plate and internal axle sleeve cylinder internal diameter are complementary, be provided with polysilicon ball influx at the gripper sleeve cone top part, space in the outside of the inboard of the sleeve that is linked to be by gripper sleeve A and internal axle sleeve cylinder and monocrystalline, and the short transverse in this space is that top from skimming plate is to the uncovered polysilicon ball that supports use that all is covered with of the vertex of a cone.
2. grasping system according to claim 1 is characterized in that: described to be provided with polysilicon ball influx at the gripper sleeve cone top part be to be connected with the container that holds the polysilicon ball by electrically operated valve, and this container is connected with the furnace wall by union lever.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220682114 CN202968740U (en) | 2012-12-11 | 2012-12-11 | Single crystal clamping system of zone melting furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220682114 CN202968740U (en) | 2012-12-11 | 2012-12-11 | Single crystal clamping system of zone melting furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202968740U true CN202968740U (en) | 2013-06-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220682114 Expired - Lifetime CN202968740U (en) | 2012-12-11 | 2012-12-11 | Single crystal clamping system of zone melting furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202968740U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105386120A (en) * | 2014-09-03 | 2016-03-09 | 硅电子股份公司 | method of supporting a growing single crystal during crystallization of the single crystal according to the FZ method |
-
2012
- 2012-12-11 CN CN 201220682114 patent/CN202968740U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105386120A (en) * | 2014-09-03 | 2016-03-09 | 硅电子股份公司 | method of supporting a growing single crystal during crystallization of the single crystal according to the FZ method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: GRINM ADVANCED MATERIALS CO.,LTD. Patentee after: Guotai Semiconductor Material Co.,Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Patentee before: Guotai Semiconductor Material Co.,Ltd. |
|
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: GRINM ADVANCED MATERIALS CO.,LTD. Patentee after: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM ADVANCED MATERIALS CO.,LTD. Patentee before: Guotai Semiconductor Material Co.,Ltd. |
|
| ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150708 Free format text: FORMER OWNER: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Effective date: 20150708 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150708 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM ADVANCED MATERIALS CO.,LTD. Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20130605 |
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| CX01 | Expiry of patent term |