Embodiment
Shown in Fig. 1 to 6, a kind of method that the Metal Palladium layer is set in the conductive layer of printed circuit board (PCB) is characterized in that, comprises the steps:
The first step, insulated substrate 10 is covered copper, a side or two sides coating Copper Foil 11 at this insulated substrate 10 form copper-clad laminated board 12.
Specifically can determine it is to cover copper or copper is covered in both sides in a side of this insulated substrate 10 according to need of production.
If two-sided simultaneously plating when in the utility model, adopting the mode of electroplating to cover copper owing to plating, requiring the layer copper-plated while of thickening, also can be thickened copper facing at other one deck, if copper facing is too thick, the circuit that will affect is subsequently made, so be necessary the copper plate attenuate, so in implementation, can utilize acid solution to subtract the copper operation.
Second step, the copper-clad laminated board 12 in the first step is carried out baking sheet.
Copper-clad laminated board 12 is placed on continues baking sheet 4 hours in the environment of 160 ℃ to 190 ℃ of temperature.
Stress between Copper Foil 11 and the insulated substrate 10 can be reduced by baking sheet, when following process, can not cause distortion and the warpage of sheet material.
The 3rd step, in the second step through the copper-clad laminated board 12 after the baking sheet, the operating process of carry out successively Drilling operation, heavy copper operation, making circuit, insulating barrier welding resistance obtains semi-finished product plate body 30.
Specific operation process in the 3rd step can utilize multiple existing embodiment to implement, and is not repeated here, followingly only a kind of better preferred implementation of the present utility model is described.
At first carry out Drilling operation.
In implementation, can adopt the mode of laser or machine drilling to carry out Drilling operation, behind the Drilling operation, adopt chemical electroless plating copper mode to process at Copper Foil 11 and form the first coating 21, make both sides Copper Foil 11 mutual conduction, to finish heavy copper operation.
Electrolytic copper plating is carried out on the surface of this first coating 21 process, form the second coating 22 at this first coating 21.
For the second coating 22 circuit forming surfaces at copper-clad laminated board 12, attach the dry film 23 that contains emulsion at this second coating 22.
Then, expose and video picture by the optical treatment operation, be formed for forming the dry film peristome 24 of circuit.
The electrolytic copper plating processing is carried out at the position 24 that needs is formed circuit, forms copper coating 25.
Remove this sensitization dry film 23 of these copper coating 25 peripheries by the stripping process of prior art, thereby finish the operation of making circuit, obtain circuit 26.
On this circuit 26, again attach the dry film 27 that contains emulsion.
After again attaching dry film 27, in order to form external circuit at this circuit 26 that forms by the optical treatment operation, be formed for forming the etching protective film 28 of external circuit through exposure and video picture operation.
Copper Foil 11, the first coating 21, the second coating 22 beyond the etching protective film 28 that is used for the formation external circuit that forms by the optical treatment operation are carried out etching; after forming external circuit 29, remove Copper Foil 11, the first coating 21, second coating 22 of external circuit 29 peripheries by traditional stripping process.
In order to ensure mutually insulated between the etched circuit, carry out the printing process that PSR operation or polyimides are insulating material, form insulating barrier 41 between the circuit beyond needs carry out surface treatment region.
The 4th step, the circuit 26 of semi-finished product plate body 30 in the 3rd step and external circuit 29 positions sink nickel, heavy palladium, turmeric operation successively, formation conductive layer 42.
In order to improve the conductivity of circuit 26 and external circuit 29, sink successively nickel, heavy palladium, turmeric operation, concrete production stage is:
Step 1, will the semi-finished product plate body 30 drop in the cleaning slots and clean, the effect of this step is to remove semi-finished product plate body 30 copper face slight oxidation thing and dirts, the air and the dirt that are adsorbed in copper face are arranged, reduce surface tension of liquid, reach moistening effect, so that the liquid of subsequent treatment is able to smoothly and the copper face effect, its chemical principle is as follows
The concentration of RCOOH is 80 to 120ml/L, and cleaning temperature is 40 to 50 ℃, and the processing time is controlled at 3 to 6 minutes.
Material selection PVC or the P.P. of cleaning slot in implementation, heater is selected quartz or Teflon heater, need to upgrade cleaning fluid when cleaning buried copper content reaches 500 ~ 1000ppm.
Step 2, semi-finished product plate body 30 is taken out from cleaning slot, carry out little rotten processing after cleaning with clear water.
Little rotten effect of processing is to remove the copper face oxide, makes the little alligatoring of copper face, makes the electroless nickel layer in copper layer and the subsequent step that good adherence be arranged.
Select the mixing material of sodium peroxydisulfate and CP sulfuric acid to carry out little corruption in carrying out little rotten process of processing, its chemical principle is as follows,
The consumption of sodium peroxydisulfate is 80 to 120 g/L, the consumption of CP sulfuric acid is 15 to 25ml/L, and temperature is controlled at 20 to 30 ℃, and the processing time is controlled at 1 to 2 minute, copper face microetch amount is controlled at 20 to 40 μ m, need to upgrade little sanies when little rotten liquid copper content reaches 15 g/l.
Step 3, semi-finished product plate body 30 is taken out from little sanies, carries out pickling processes after cleaning with clear water, carry out preimpregnation after the cleaning.
Wherein, the effect of pickling is the copper face oxide of removing after the microetch, and the effect of preimpregnation is to keep the acidity in the activated bath in the following step, make copper face under oxide-free state, enter below activated bath in the step.
The concentration of control CP sulfuric acid is 40 ml/L when carrying out pickling processes, and the processing time is controlled at 1 to 1.5 minute, and its chemical principle is CuO+H
2SO
4→ CuSO
4+ H
2O.
The concentration of control hydrochloric acid is 30 ml/L when carrying out preimpregnation, and the preimpregnation time is controlled at 1 to 2 minute, and its chemical principle is CuO+HCI → CuCl
2+ H
2O.
The semi-finished product plate body 30 of step 4, process preimpregnation is directly inserted and is carried out activation act in the activated bath.
Activation act is to carry out without the pre-treatment before the electrolytic nickel catalytic activation being carried out on the copper surface at semi-finished product plate body 30, and it specifically comprises replaces palladium and copper, makes the complete copper surface that is adsorbed on of palladium active nucleus.
By activation act palladium catalysis nuclear optionally is adsorbed on the copper, allows be plated in fully on the copper surface without electrolytic nickel, and make unusually separating out on the resin reduce to minimum.
Can make copper layer and nickel dam in the subsequent step reach perfect adherence through activation act.
In the process of carrying out activation act, utilize hydrochloric acid palladium and hydrochloric acid to make activating solution and carry out activation act.
Its operation principle is, at copper face displacement (ionization trend Cu〉Pd) last layer palladium, with the catalyst as the chemical nickel reaction, the catalytic active center of Pd has the performance of easy sorption hydrogen, and then can bring out the chemical nickel reaction, and its reaction principle is,
Anode reaction Cu → Cu
2++ 2 e-(E
0=-0.337V)
Cathode reaction Pd
2++ 2 e-→ Pd (E
0=0.987V)
Full response Cu+Pd
2+→ Cu
2++ Pd (E
0=0.65V)
The activation concrete steps are, at first in the treatment trough of doing Net, put into about 60% and build the water of bath amount, then the concentration according to 20ml/l adds hydrochloric acid, concentration according to 100ml/l adds the hydrochloric acid palladium afterwards, then add entry to fixed capacity, and fully stir, heating makes fluid temperature to 20 to 30 ℃, processed 2 to 5 minutes, to finish activation process.
Can add interfacial agent to promote reaction speed, reaction effect in order to promote activation effect.
Semi-finished product plate body 30 through activation processing can be through entering following step with Improving The Quality of Products after washing and the pickling again.
Step 5, to carry out the nickel plating operation through the semi-finished product plate body 30 of activation processing.
Nickel plating operation is that semi-finished product plate body 30 copper faces after activation plate layer of Ni/P alloy, as the layer that blocks that blocks migration between the Jin Yutong, diffusion.
Use following composition when carrying out the nickel plating operation, nickelous sulfate is in order to provide nickel ion, inferior sodium phosphate is in order to provide electronics, make nickel ion be reduced to metallic nickel, the misfit agent is in order to form the wrong ion of nickel, reduce free nickel ion concentration, prevent that nickel hydroxide and phosphorous acid nickel from generating, increase and bathe stability, pH buffering, the pH adjusting agent is in order to keep proper pH value, and stabilization agent reduces at colloidal particle or other particulate in order to prevent nickel, stablize plating bath, prevent that plating bath from decomposing, additive opens plating easily and increases reduction efficiency in order to increase the negative potential on plated body surface, to make.
Its chemical principle is,
Dehydrogenation H
2PO
2 -→ HPO
2 -+ H
(on catalytic surface generation)
Oxidation HPO
2 -+ OH
-→ H
2PO
3 -+ e
-
Again in conjunction with H+H → H
2
Oxidation H+OH
-→ H
2O+e
-
Metal is separated out Ni
2 ++ 2e
-→ Ni
Hydrogen produces 2H
2O+2e
-→ H
2+ 2OH
-
Phosphorus eutectoid mNi
2 ++ H
2PO
2 -+ (2m+1) e
-→ NimP+2OH-
Reaction enclosure H
2O+H
2PO
2 -→ H
2+ H
2PO
3 -(hypophosphorous acid the oneself decompose)
The nickel plating step is, at first adds deionized water to cell body 2/3 position, then adds 18.75L/100L reducing agent, misfit agent, additive and uniform stirring, and the percentage by weight of reducing agent, misfit agent, additive is 1:1:1; Then add 6.25L/100L nickelous sulfate and uniform stirring it; After add again 200ml/100L additive and uniform stirring; Long-pending ﹐ heats while stirring to 75 to 85 ℃ with deionized water adjustment tank liquid body; Open circulating filtration, the control time operated thereby finish nickel plating at 15 to 25 minutes.
All the time control the pH value and be controlled at 4.5 ± 0.2 in the nickel plating step, rising pH value reduces the pH value with the sulfuric acid solution adjustment of 10 % with the adjustment of ammoniacal liquor (28%) solution.
Above-mentioned reducing agent is inferior sodium phosphate, the misfit agent, and stabilization agent, additive can be selected on the market existing product.
Plate the palladium operation after step 6, the semi-finished product plate body 30 that nickel plating operates to process clean, at the nickel dam plating palladium layer of semi-finished product plate body 30, the thickness of palladium layer is between 0.01 to 0.15 μ m.
The plating bath of liquid that plates the palladium operation forms with operating condition.
The content of metal Pd is controlled at 0.8 to 1.2g/L, temperature is controlled at 50 to 54 ℃, reductant concentration is controlled at 1.5 to 10g/L, pH value is controlled at 7.3 to 7.9, electroplating time is controlled at 3 to 10 minutes, it is 94 to 98% that metal Pd is separated out purity, and speed of separating out is 0.4 to 0.8 μ m/hr.
The concrete steps of plating palladium operation are to build the bath condition as example take 100L.
At first in electroplating bath, add pure water 40L, then, 50L is plated palladium stoste join in the electroplating bath, add again 2.5L palladium bulking liquor, confirm that the pH value is 7.5 to 7.7, add 10% sulfuric acid in the time of extraneous and 30% potassium hydroxide is adjusted, last, with pure water liquid measure is adjusted to 100L, liquid temperature is adjusted to 50 to 54 ℃, slowly add reducing agent 300g while stirring, make it to dissolve fully, finished the plating palladium through 3 to 10 minutes and operate.
Step 7, carry out gold-plated operation after the semi-finished product plate body 30 through plating palladium operation cleaned, Gold plated Layer on the palladium layer of semi-finished product plate body 30, the thickness of gold layer is between 0.03 to 0.05 μ m.
The plating bath of liquid that carries out gold-plated operation forms with operating condition.
The content of metallic gold is controlled at 1.5 to 2.5g/L, and temperature is controlled at 80 to 95 ℃, and pH value is controlled at 4.7 to 5.3, and speed of separating out is that 0.3 to 0.4 μ m/20 divides, and the time is controlled at 15 to 20 minutes,
Plating
GoldThe concrete steps of operation are to build the bath condition as example take 100L.
At first, the 60L pure water is added electroplating bath, then add the 25L gold plating bath, 294 g potassium auricyanides (Au metal 2g/L) are added in the 5L temperature pure water, dissolve, then add in the electroplating bath, with pure water liquid measure is adjusted to 100L, confirm that the pH value is whether in 4.7 to 5.3 scopes, use 20% potassium hydroxide solution to adjust if go beyond the scope, after pH adjusted, liquid temperature rose when arriving 90 ℃, can operate.
As shown in Figs. 7-9, a kind of Metal Palladium layer structure of printed circuit board (PCB) conductive layer, it comprises insulated substrate 100, circuit layer 200 and conductive layer 300.
This circuit layer 200 is arranged on this insulated substrate 100, and this circuit layer 200 forms the integrated circuit of printed circuit board (PCB).
Can be as required in implementation, in upper surface or the lower surface one side of this insulated substrate 100 this circuit layer 200 is set, also can be simultaneously in upper surface and the lower surface one side of this insulated substrate 100 this circuit layer 200. be set
This conductive layer 300 is arranged on this circuit layer 200.
One side of this circuit layer 200 is connected with this insulated substrate 100, and an other side of this circuit layer 200 is connected with this conductive layer 300.
Wrap up by this conductive layer 300 and 100 pairs of these circuit layers 200 of this insulated substrate.
Comprise metal nickel dam 301, Metal Palladium layer 302 and metallic gold layer 303 by this conductive layer 300,
Wherein, this metal nickel dam 301 covers on this circuit layer 200, and this Metal Palladium layer 302 covers on this metal nickel dam 301, and metallic gold layer 303 covers on this Metal Palladium layer 302.
That is to say that these Metal Palladium layer 302 isolation are arranged between this metal nickel dam 301 and this metallic gold layer 303.
In implementation, the thickness of this Metal Palladium layer 302 is between 0.01 to 0.15 μ m, and the thickness of this metallic gold layer 303 is between 0.03 to 0.05 μ m.
In implementation, 200 of this circuit layers are arranged on a side of this insulated substrate 100, and this circuit layer 200 comprises copper foil layer 201 and top circuit layer 202, wherein, this copper foil layer 201 is arranged on this insulated substrate 100, and this top circuit layer 202 is arranged on this copper foil layer 201 tops.
This circuit layer 200 is arranged on upper surface and the lower surface of this insulated substrate 100 simultaneously, this circuit layer 200 comprises copper foil layer 201, heavy copper layer 203, coating 204 and top circuit layer 202, wherein, this copper foil layer 201 is arranged on this insulated substrate 100, should be arranged on this copper foil layer 201 by heavy copper layer 203, this coating 204 is arranged on this heavy copper layer 203, and this top circuit layer 202 is arranged on this coating 204 tops.