CN202395033U - Packaging structure of light-emitting diode - Google Patents

Abstract

The utility model discloses a packaging structure of a light-emitting diode, which comprises an anode oxide substrate, at least two electric conducting holes, at least two back electrodes and a light-emitting diode (LED) chip, wherein the anode oxide substrate is provided with a first surface, a second surface and a plurality of self-assembled through holes; the at least two electric conducting holes are respectively formed in the plurality of through holes in an electrical separation mode; the at least two back electrodes are formed on the first surface of the anode oxide substrate and respectively electrically connected with first end faces of the at least two electric conducting holes; and the LED chip is provided with an optical surface and a light-emitting surface. The optical surface is provided with at least two welding pads, and the welding pads are electrically connected to second end faces of the electric conducting holes through at least two protruding blocks. The material cost of the substrate is reduced by means of the material characteristics of the anode oxide substrate, and the heat dissipation requirements and avoidance of a short circuit among the electric conducting holes can be considered.

Description

The LED package structure

Technical field

The utility model relates to a kind of LED package structure, particularly relevant for a kind of LED package structure that uses the anodic oxide substrate.

Background technology

Along with quality of the life improves and the environmental consciousness new line; The exploitation of green resource and use are more and more widely; A key project wherein be various light-emitting diodes (light emitting diode, the LED) application in illumination is because light-emitting diode has advantages such as power saving and long-life; Therefore the technology relevant with light-emitting diode constantly is developed and improves, to promote light taking-up efficient (light extraction efficiency), to improve radiating efficiency and increase the service life etc.Above-mentioned improvement is except relevant with the semi-conducting material of light-emitting diode chip for backlight unit itself, and also there is great correlation in the packaged type with light-emitting diode chip for backlight unit.

Please with reference to Fig. 1, shown in 2 and 3, it discloses the packaging structure of three kinds of existing light-emitting diode chip for backlight unit.

As shown in Figure 1, it discloses a kind of packaging structure of existing light-emitting diode chip for backlight unit, and it comprises a substrate 11, a circuit layer 12, an adhesion layer 13, a led chip 14, at least two leads 15 and a printing opacity encapsulating material 16.Said substrate 11 is minitype circuit boards, the said circuit layer 12 of its positive formation, and said led chip 14 utilizes said adhesion layer 13 to be fixed on the said substrate 11.The optical surface of said led chip 14 (that is light-emitting area) up and have weld pad (indicate), it utilizes said lead 15 to be electrically connected to said circuit layer 12.At last, utilize said printing opacity encapsulating material 16 to coat positions such as said led chip 14 of protection and lead 15, can accomplish package fabrication process.Blending has phosphor powder in the said printing opacity encapsulating material 16.

As shown in Figure 2; It discloses the packaging structure of another kind of existing light-emitting diode chip for backlight unit, and it comprises one first pin 21, one second pin 22, an adhesion layer 23, a led chip 24, at least two leads 25, a printing opacity encapsulating material 26 and a fluorescent packing material 27.The end face of said first pin 21 is recessed to form a cup-shaped recess 211, makes said led chip 24 utilize said adhesion layer 23 to be fixed in the said cup-shaped recess 211.Its complementary space of said cup-shaped recess 211 then utilizes said fluorescent packing material 27 to fill up.The optical surface of said led chip 24 (that is light-emitting area) up and have weld pad (indicate), it utilizes said lead 25 to be electrically connected to said first pin 21 and second pin 22.At last, utilize said printing opacity encapsulating material 26 to coat positions such as the said led chip of protection 24, lead 25 and fluorescent packing material 27, can accomplish package fabrication process.

As shown in Figure 3, it discloses the packaging structure of another existing light-emitting diode chip for backlight unit, and it comprises a silicon substrate 31, two conductive holes 32, two projections 33 (bump), a led chip 34, two electrodes 35 and a printing opacity encapsulating material 36.Said silicon substrate 31 forms perforation earlier; Coat an insulating barrier 311 in the perforation inwall again; Then in said insulating barrier 311 in, electroplate or insert metal material again, forming said conductive hole 32, the optical surface of said led chip 34 (that is light-emitting area) down and have a weld pad (sign); It forms said electrode 35, and utilizes said projection 33 to be electrically connected to said conductive hole 32.At last, utilize said printing opacity encapsulating material 36 to coat positions such as said led chip 34 of protection and projection 33, can accomplish package fabrication process.

LED packaging structure shown in Figure 3 belongs to a kind of wafer-grade packaging structure, and (wafer lever package, WLP), its size is significantly less than the LED packaging structure of Fig. 1 or 2 relatively.Simultaneously, because the led chip 34 of the chip upside-down mounting type of Fig. 3 is not provided with lead, and the heat energy that said led chip 34 produces can be passed to said conductive hole 32 and silicon substrate 31 through said electrode 35 and projection 33, thereby also has higher relatively radiating efficiency.

Yet; The technical problem of the LED packaging structure of Fig. 3 is: though said silicon substrate 31 has preferable thermal diffusivity; But (Si) itself has the semiconductive characteristic because of silicon, so in order to make said conductive hole 32, must in the perforation of said silicon substrate 31, be coated with earlier the above insulating barrier 311 usually.But the material cost of said silicon substrate 31 is very expensive, and makes said insulating barrier 311 and also can increase manufacturing cost.Simultaneously, the manufacture craft of said insulating barrier 311 takes place to block whole perforation because of said insulating barrier 311 easily, and causes significantly reducing the yields of the said conductive hole 32 of follow-up formation.In addition, when reality was used, also normal the discovery then still possibly electrically conduct between the adjacent conductive hole 32 and cause short risk, thereby significantly influence the reliability of LED encapsulating products if voltage or electric current are excessive.

So, still be necessary to provide a kind of LED package of improvement to construct, to solve the existing in prior technology problem.

The utility model content

In view of this, the utility model provides a kind of LED package structure, to solve existing wafer scale LED packaging structure existing substrate yield of technology and reliability issues.

The main purpose of the utility model is to provide a kind of LED package structure; It is in manufacture process, to use a metallic plate to form the anodic oxide substrate earlier; Utilize this anodic oxide substrate to form back electrode and conductive hole again; With as the power source supply end of led chip, therefore not only can utilize the material behavior of anodic oxide substrate to reduce the material cost of LED substrate, also can take into account heat radiation and requiring and effectively avoid the problem of short-circuit that electrically conducts between the conductive hole; So help reducing the manufacturing cost of LED packaging structure really, and improve its radiating efficiency and production reliability.

For reaching the aforementioned purpose of the utility model, the utility model provides a kind of light-emitting diode (LED) packaging structure, and wherein said LED package structure comprises:

One anodic oxide substrate has a first surface and a second surface, and is covered with the through hole that several self assemblies are arranged, and said through hole runs through and is formed between said first and second surface;

At least two conductive holes, being respectively formed in several said through holes of electrical separation, and each said conductive hole each other has one first end face and one second end face, and said first and second end face exposes first and second surface at said anodic oxide substrate respectively;

At least two back electrodes are formed on the first surface of said anodic oxide substrate, and electrically connect first end face of said at least two conductive holes respectively; And

One led chip has an optical surface and a light output surface, and said optical surface has at least two weld pads, and said weld pad is electrically connected to second end face of said conductive hole through at least two projections.

In an embodiment of the utility model, said LED package structure comprises in addition: a printing opacity encapsulating material be positioned on the light output surface of said led chip, and blending has at least a phosphor powder.

In an embodiment of the utility model, the second surface of said anodic oxide substrate has at least two connection pads and an insulating barrier, and said insulating barrier exposes said connection pad, and said connection pad electrically connects second end face of said conductive hole, and combines said projection.

In an embodiment of the utility model, said anodic oxide substrate is selected from anodic oxidation aluminium base, anodic oxidation titanium-base or anodic oxidation zinc-base plate.

In an embodiment of the utility model, the thickness of said anodic oxide substrate is between 100 to 1000 microns (μ m).

In an embodiment of the utility model, the aperture of the through hole of said anodic oxide substrate is between 10 to 100 nanometers (nm).

In an embodiment of the utility model, said back electrode is selected from aluminium coat, silvering or gold plate.

In an embodiment of the utility model, said conductive hole is selected from copper conductive hole, silver-colored conductive hole or golden conductive hole.

In an embodiment of the utility model, said printing opacity encapsulating material coats whole said led chip, and the two side faces at least of said printing opacity encapsulating material is coated with a metallic radiating layer in addition.

Moreover the utility model provides another kind of LED package structure, and wherein said LED package structure comprises:

One anodic oxide substrate has a first surface and a second surface, and is covered with the through hole that several self assemblies are arranged, and said through hole runs through and is formed between said first and second surface;

At least two conductive holes, being respectively formed in several said through holes of electrical separation, and each said conductive hole each other has one first end face and one second end face, and said first and second end face exposes first and second surface at said anodic oxide substrate respectively;

At least two back electrodes are formed on the first surface of said anodic oxide substrate, and electrically connect first end face of said at least two conductive holes respectively;

One led chip has an optical surface and a light output surface, and said optical surface has at least two weld pads, and said weld pad is electrically connected to second end face of said conductive hole through at least two projections; And

One printing opacity encapsulating material is positioned on the light output surface of said led chip.

In an embodiment of the utility model, the blending of said printing opacity encapsulating material has at least a phosphor powder.

Description of drawings

Fig. 1 is the sketch map of the packaging structure of an existing light-emitting diode chip for backlight unit.

Fig. 2 is the sketch map of the packaging structure of another existing light-emitting diode chip for backlight unit.

Fig. 3 is again the sketch map of the packaging structure of an existing light-emitting diode chip for backlight unit.

Fig. 4 A, 4B, 4C, 4D, 4E, 4F, 4G, 4H and 4I: the sketch map of each step of manufacturing approach of the LED package structure of first embodiment of the invention.

Fig. 5 is the sketch map of the utility model second embodiment LED package structure.

Embodiment

For making the utility model above-mentioned purpose, characteristic and advantage more obviously understandable, hereinafter is special lifts the utility model preferred embodiment, and conjunction with figs., elaborates as follows.Moreover, the direction term that the utility model is mentioned, for example " on ", D score, " preceding ", " back ", " left side ", " right side ", " interior ", " outward ", " side " etc., only be direction with reference to annexed drawings.Therefore, the direction term of use is in order to explanation and understands the utility model, but not in order to restriction the utility model.

Please with reference to shown in Fig. 4 A to 4I; The sketch map of each step of manufacturing approach that its LED package that discloses the utility model first embodiment is constructed; The utility model will utilize Fig. 4 A to 4I to specify the detailed processed process of first each step of embodiment one by one in hereinafter, and detail structure, assembled relation and the operation principles thereof of each element.

Please with reference to shown in Fig. 4 A and the 4B; The manufacturing approach of the LED package structure of the utility model first embodiment at first is: prepare a metallic plate 40; And with in said metallic plate 40 immersion one acid solutions (like sulfuric acid, phosphoric acid or oxalic acid); Handle said metallic plate 40 is carried out anodic oxidation (Anodic oxidation), to form an anodic oxide layer 41 on a surface of said metallic plate 40 (like lower surface).In this step, said metallic plate 40 can be selected from aluminium sheet, titanium plate or zine plate, and it can form anodised aluminium (anodic aluminum oxide) layer, anodic oxidation titanium layer or anodic oxidation zinc layer respectively.In the present embodiment, said metallic plate 40 is selected from aluminium sheet, and said anodic oxide layer 41 is anodic aluminum oxide layer.The oxide of above-mentioned metal has the characteristic that self assembly (self-assembly) is arranged; Therefore the anodic oxide layer 41 that after anodized, forms will have monoxide bottom 411 and monoxide porous layer 412, and the thickness of wherein said oxide underlayer 411 is (less than 0.5 micron) as thin as a wafer; And the thickness of said oxide porous layer 412 is between 100 to 1000 microns (μ m).Said oxide underlayer 411 be actually by densification oxide crystallization constituted; And said oxide porous layer 412 is actually to be arranged by the long column shape crystallization institute self assembly of oxide and constitutes; And between these long column shape crystallizations, then be covered with the through hole 413 that several self assemblies are arranged; The aperture of wherein said through hole 413 belongs to nanoscale, and roughly between 10 to 100 nanometers (nm).The cross section hole shape of said through hole 413 can be circle or polygon (like hexagon).Usually, the oxide long column shape crystallization of said oxide porous layer 412 is that the array (array) that is regular shape is arranged, and makes said through hole 413 also present the arrayed of regular shape (like the hexagon honeycomb arrangement).

Please with reference to shown in Fig. 4 C and the 4D; The manufacturing approach of the LED package structure of the utility model first embodiment then is: utilize vapor deposition or sputtering way to form several back electrodes 42 on a surface of said anodic oxide layer 41 (like lower surface); Then utilize a loading plate 50 to carry this surface (being lower surface) that said metallic plate 40 has said oxide porous layer 412 and back electrode 42; And attrition process is removed said metallic plate 40 and oxide underlayer 411; After grinding, only stay said oxide porous layer 412 and back electrode 42.In this step, said back electrode 42 can be selected from aluminium coat, silvering or gold plate, and its thickness is not limit, for example can be between between 10 nanometers to 1 micron.Said loading plate 50 is for example used the combination carrier for a kind of provisional support with an adhesive tape and a metal frame.After grinding, can expose another surface (like upper surface) of said oxide porous layer 412.

Please with reference to shown in Fig. 4 E; The manufacturing approach of the LED package structure of the utility model first embodiment then is: in the through hole 413 of said oxide porous layer 412, utilize electrochemical deposition method (promptly electroplating) to form two conductive holes 43; Wherein said conductive hole 43 is meant two conductive regions that electrically separate each other, and it is respectively formed in several said through holes 413 separately.For said conductive hole 43 can electrically be separated each other; Before electroplating; Can be in the through hole of not wanting to electroplate 413 zones (i.e. zone between two conductive holes 43) utilize an adhesive tape (not illustrating) that this zone is pasted to cover, and after electroplating, give again and remove said adhesive tape and get final product.Each said conductive hole 43 all has one first end face (being the lower surface) and one second end face (being the upper surface) basically, and said first and second end face exposes the first surface (being lower surface) and a second surface (being upper surface) at said oxide porous layer 412 respectively.For second end face and the said oxide porous layer 412 second surface level of keeping said conductive hole 43 trims, preferably can after above-mentioned plating, carry out milled processed one time, so that its surfacing is easy to carry out following step to second surface.

Please with reference to shown in Fig. 4 F; The manufacturing approach of the LED package structure of the utility model first embodiment then is: go up at the second surface (being upper surface) of said oxide porous layer 412 and make a surface lines 44 and an insulating barrier 45; Wherein said surface lines 44 comprises at least two connection pads (not indicating); Said insulating barrier 45 has at least two openings with exposed said connection pad; And said connection pad is in order to electrically connecting second end faces of said conductive hole 43 downwards through said surface lines 44, and respectively in order to upwards to combine at least one projection (bumps) 46.Said projection 46 can be tin projection, golden projection, copper post projection (Cu pillar bump) or nickel post projection.In the present embodiment, the second end face correspondence of each said conductive hole 43 has two connection pads and two projections 46.

Please with reference to shown in Fig. 4 G and the 4H; The manufacturing approach of the LED package of the utility model first embodiment structure then is: with a light-emitting diode (LED) wafer 60 through said projection 46 solder bond to the second surface (being upper surface) of said oxide porous layer 412, follow and on said LED wafer 60, be coated with a printing opacity encapsulating material 70.In this step; Said LED wafer 60 has an optical surface 61 and a light output surface 62; Said optical surface 61 is light-emitting area or active surface just, and its semiconductor substrate that can produce light and be upward through said LED wafer 60 is outwards penetrated by said light output surface 62.Said optical surface 61 down and have several weld pads 63, said weld pad 63 is electrically connected to the connection pad of said surface lines 44 and second end face of said conductive hole 43 through said projection 46 respectively.Said printing opacity encapsulating material 70 is positioned on the light output surface 62 of said LED wafer 60; The base material of wherein said printing opacity encapsulating material 70 is epoxy resin or general silica gel material or other light-transmissive resins; And blending has at least a phosphor powder in base material; Said phosphor powder can be the phosphor powder that can produce the exciting light of red, green, blue, Huang or other colors, in the utility model, does not limit its kind.

Please with reference to shown in Fig. 4 I, the manufacturing approach of the LED package of the utility model first embodiment structure is at last: cut said oxide porous layer 412, LED wafer 60 and printing opacity encapsulating material 70, to isolate several LED packaging structures 100.Manufacturing approach through Fig. 4 A to 4I; Can make and cut out several LED packaging structures 100 single time; Wherein each LED packaging structure 100 comprises: an anodic oxide substrate 47, at least two conductive holes 43, at least two back electrodes 42, a led chip 64 and a printing opacity encapsulating material 72, wherein said anodic oxide substrate 47, led chip 64 and printing opacity encapsulating material 72 are cut into the blockage shape by said oxide porous layer 412, LED wafer 60 and printing opacity encapsulating material 70 respectively and form.Said anodic oxide substrate 47 has a first surface (lower surface) and a second surface (upper surface), and is covered with several through holes 413, and said through hole 413 runs through and is formed between said first and second surface.The thickness of said anodic oxide substrate 47 is between 100 to 1000 microns (μ m), and the aperture of said through hole 413 is between 10 to 100 nanometers (nm).

Moreover; What said at least two conductive holes 43 electrically separated each other is respectively formed in several said through holes 413; And each said conductive hole 43 has one first end face (lower surface) and one second end face (upper surface), and said first and second end face exposes first and second surface at said anodic oxide substrate 47 respectively.Said at least two back electrodes 42 are formed on the first surface of said anodic oxide substrate 47, and electrically connect first end face of said at least two conductive holes 43 respectively.Said led chip 64 has an optical surface 61 (lower surface) and a light output surface 62 (upper surface), and each side surface of said led chip 64 all is exposed to the outside because of the relation of cutting.Said optical surface 61 has at least two weld pads 63; The second surface of said anodic oxide substrate 47 has at least two connection pads and an insulating barrier 45; Said insulating barrier 45 exposed said connection pads; Said connection pad is to electrically connect second end face of said conductive hole 43 through said surface lines 44, and combines said projection 46.Said weld pad 63 is electrically connected to second end face of said conductive hole 43 through said projection 46.Said printing opacity encapsulating material 72 is positioned on the light output surface 62 of said led chip 64, and blending has at least a phosphor powder 71.

Please with reference to shown in Figure 5; The LED package structure of the utility model second embodiment is similar in appearance to the utility model first embodiment; And roughly continue to use similar elements title and figure number; But the difference characteristic of second embodiment is: the LED package structure 100 of said second embodiment can be after cutting forms said anodic oxide substrate 47 and led chip 64 respectively in advance; Again in addition solder bond both, therefore each side surface of said led chip 64 can be coated on its inside fully by said printing opacity encapsulating material 72, just said printing opacity encapsulating material 72 coats whole said led chip 64.Moreover the second end face correspondence of each said conductive hole 43 has single connection pad and single projection 46.In addition, the two side faces at least of said printing opacity encapsulating material 72 is coated with a metallic radiating layer 80 with modes such as plating in addition, and the material of said metallic radiating layer 80 can be copper, silver or gold etc., and said metallic radiating layer 80 is in order to strengthen the radiating effect of said led chip 64.

As stated; Compared to existing wafer scale LED packaging structure existing substrate yield of technology and reliability issues; The LED package structure of Fig. 4 I and the utility model of 5 is in manufacture process, to use a metallic plate to form the anodic oxide substrate earlier; Utilize this anodic oxide substrate to form back electrode and conductive hole again; With as the power source supply end of led chip, therefore not only can utilize the material behavior of anodic oxide substrate to reduce the material cost of LED substrate, also can take into account heat radiation and requiring and effectively avoid the problem of short-circuit that electrically conducts between the conductive hole; So help reducing the manufacturing cost of LED packaging structure really, and improve its radiating efficiency and production reliability.

The utility model is described by above-mentioned related embodiment, yet the foregoing description is merely the example of implementing the utility model.Must be pointed out that disclosed embodiment does not limit the scope of the utility model.On the contrary, being contained in the spirit of claims and the modification and impartial setting of scope includes in the scope of the utility model.

Claims (8)

1. a LED package is constructed, and it is characterized in that: said LED package structure comprises:

One anodic oxide substrate has the through hole that a first surface, a second surface and several self assemblies are arranged, and said through hole runs through and is formed between said first and second surface;

At least two conductive holes, being respectively formed in several said through holes of electrical separation, and each said conductive hole each other has one first end face and one second end face, and said first and second end face exposes first and second surface at said anodic oxide substrate respectively;

At least two back electrodes are formed on the first surface of said anodic oxide substrate, and electrically connect first end face of said at least two conductive holes respectively; And

One led chip has an optical surface and a light output surface, and said optical surface has at least two weld pads, and said weld pad is electrically connected to second end face of said conductive hole through at least two projections.

2. LED package structure as claimed in claim 1; It is characterized in that: the second surface of said anodic oxide substrate has at least two connection pads and an insulating barrier; Said insulating barrier exposes said connection pad, and said connection pad electrically connects second end face of said conductive hole, and combines said projection.

3. LED package structure as claimed in claim 1, it is characterized in that: said anodic oxide substrate is selected from anodic oxidation aluminium base, anodic oxidation titanium-base or anodic oxidation zinc-base plate.

4. LED package structure as claimed in claim 1, it is characterized in that: the thickness of said anodic oxide substrate is between 100 to 1000 microns.

5. LED package structure as claimed in claim 1, it is characterized in that: the aperture of the through hole of said anodic oxide substrate is between 10 to 100 nanometers.

6. LED package structure as claimed in claim 1, it is characterized in that: said back electrode is selected from aluminium coat, silvering or gold plate.

7. LED package structure as claimed in claim 1, it is characterized in that: said conductive hole is selected from copper conductive hole, silver-colored conductive hole or golden conductive hole.

8. a LED package is constructed, and it is characterized in that: said LED package structure comprises:

One anodic oxide substrate has the through hole that a first surface, a second surface and several self assemblies are arranged, and said through hole runs through and is formed between said first and second surface;

At least two conductive holes, being respectively formed in several said through holes of electrical separation, and each said conductive hole each other has one first end face and one second end face, and said first and second end face exposes first and second surface at said anodic oxide substrate respectively;

At least two back electrodes are formed on the first surface of said anodic oxide substrate, and electrically connect first end face of said at least two conductive holes respectively;

One led chip has an optical surface and a light output surface, and said optical surface has at least two weld pads, and said weld pad is electrically connected to second end face of said conductive hole through at least two projections; And

One printing opacity encapsulating material is positioned on the light output surface of said led chip.

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