CN101614333A - High-efficiency radiating LED illumination light source and manufacture method - Google Patents
High-efficiency radiating LED illumination light source and manufacture method Download PDFInfo
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- CN101614333A CN101614333A CN200910038125A CN200910038125A CN101614333A CN 101614333 A CN101614333 A CN 101614333A CN 200910038125 A CN200910038125 A CN 200910038125A CN 200910038125 A CN200910038125 A CN 200910038125A CN 101614333 A CN101614333 A CN 101614333A
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Abstract
The invention discloses that a kind of cost is low, good heat dissipation effect, production efficiency and make high high-efficiency radiating LED illumination light source and the manufacture method of accuracy.Light source comprises LED bare chip (1), metal substrate (2), metal substrate deposits the heat conductive insulating layer on (2), deposit metal level (6) on the heat conductive insulating layer, be coated with welding resisting layer (8) on the metal level (6), the heat conductive insulating layer is constituted with silicon nitride layer (31) by silicon dioxide layer (30) or silicon nitride layer (31) or silicon dioxide layer (30), metal level (6) constitutes predefined circuit connection and figure according to the connection in series-parallel annexation of LED bare chip (1), LED bare chip (1) is divided into some groups of formal dress or upside-down mounting on each metal level (6), between the inner LED bare chip (1) of each group and between the some groups of LED bare chips (1) all by metal level (6) built-up circuit that is connected.Method comprises the step of metal substrate preliminary treatment, formation heat conductive insulating layer, metal level and welding resisting layer, the encapsulation of LED bare chip.
Description
Technical field
The present invention relates to a kind of high-efficiency radiating LED illumination light source; In addition, the invention still further relates to a kind of manufacture method of this high-efficiency radiating LED illumination light source.
Background technology
A plurality of LED bare chips are integrated on the wiring board are called integrated chip.No matter be that single electrode LED bare chip, bipolar electrode LED bare chip or flip LED bare chip all can be applicable on the LED integrated chip.Commonly used to aluminium base in the LED integrated chip, existing illumination LED aluminium base as substrate, applies organic matter or inorganic matter heat conductive insulating layer by the metal aluminum or aluminum alloy in the above, covers Copper Foil on the heat conductive insulating layer again.Because its heat conductive insulating layer can be high pressure resistant (＞1500V/min) and the substrate thermal diffusivity preferable, so be widely used in the LED field.Its application mode is according to the manufacture of conventional monolayers printed substrate Copper Foil to be formed circuit with serigraphy and etching mode on aluminium base, welding resisting layer is covered on the aluminium base again, only exposes the Copper Foil that needs the welding position.The aluminium base that this employing traditional approach is made, because it uses craft precision relatively poor, be difficult to accurately control the thickness of heat conductive insulating layer, in order to guarantee its withstand voltage properties, must leave big surplus to the thickness of heat conductive insulating layer, the thickness of general heat conductive insulating layer is at 80～100 μ m, so the thickness of heat conductive insulating layer is bigger, and therefore its heat conduction and radiating effect reduce greatly.
Existing illuminating LED list chips adopts the bigger power-type LED chip of area mostly, and its cost is higher, because chip area is bigger, thermal source is concentrated, so radiating effect is bad; Simultaneously, this led chip is difficult realizes that the multicore sheet is integrated; When adopting this chip manufacturing light source, need earlier single great power LED bare chip is encapsulated in the paster encapsulation of band metal substrate, and then the SMD chip that several are packaged concerns by connection in series-parallel and is connected on the aluminium base on charged road.Adopt at present integrated LED chip to make the method for light source in addition, it needs earlier the plurality of LEDs bare chip to be connected by connection in series-parallel to be encapsulated in the paster encapsulation of being with metal substrate, and then the SMD integrated chip that several are packaged is connected on the aluminium base on charged road by the connection in series-parallel relation.The manufacture process of the light source of this integrated LED chip needs at first the LED bare chip once to be encapsulated, and carries out the secondary encapsulation again on the aluminium base on charged road, so its complex process, and cost is higher, and production efficiency is lower.
Summary of the invention
Technical problem to be solved by this invention is to overcome the deficiencies in the prior art, provides that a kind of cost is low, good heat dissipation effect, production efficiency height, makes the high high-efficiency radiating LED illumination light source of accuracy.
In addition, the present invention also provides a kind of manufacture method of high-efficiency radiating LED illumination light source.
The technical scheme that high-efficiency radiating LED illumination light source of the present invention adopted is: high-efficiency radiating LED illumination light source of the present invention comprises the LED bare chip, described LED bare chip comprises substrate and N type epitaxial loayer, P type epitaxial loayer, described high-efficiency radiating LED illumination light source also comprises metal substrate, the upper surface of described metal substrate deposits the heat conductive insulating layer, deposit metal level on the described heat conductive insulating layer, the upper surface of described metal level removes solder joint, remainder outside chip and the routing position is coated with welding resisting layer, described heat conductive insulating layer is constituted by silicon dioxide layer or silicon nitride layer or silicon dioxide layer and silicon nitride layer, described metal level constitutes predefined circuit connection and figure according to the connection in series-parallel annexation of described LED bare chip, described LED bare chip is divided into some groups of formal dress or upside-down mounting on each described metal level, all by the described metal level built-up circuit that is connected, described metal level is drawn anode contact and cathode contact between the inner described LED bare chip of each group and between some groups of described LED bare chips.
On the described LED bare chip and cover silica gel or resin on every side and form protective layer, described protective layer covers described LED bare chip and the metal wire that is used to encapsulate or soldered ball; Perhaps, be coated with phosphor powder layer on the described LED bare chip, cover silica gel or resin around the described phosphor powder layer and form protective layer, described protective layer covers described phosphor powder layer, described LED bare chip and the metal wire that is used to encapsulate or soldered ball.
Mutual serial or parallel connection or connection in series-parallel are connected between the described LED bare chip of each group inside, and mutual serial or parallel connection or connection in series-parallel are connected between the some groups of described LED bare chips.
Described metal substrate is aluminium base or copper base, and the thickness of described metal substrate is 1～3mm, and the upper surface of described metal level is a reflective surface, and described metal level adopts copper or aluminium or silico-aluminum manufacturing, and described metal layer thickness is 1～5 μ m.
The withstand voltage of described heat conductive insulating layer is greater than 1500V/min or 3500V/min.
Described LED bare chip is single electrode chip or bipolar electrode chip.
The technical scheme that manufacture method adopted of high-efficiency radiating LED illumination light source of the present invention is: may further comprise the steps:
(a) metal substrate preliminary treatment: the upper surface to described metal substrate carries out the flat polish processing;
(b) form the heat conductive insulating layer: adopting the normal pressure chemical vapor phase method is that the silicon dioxide layer of 1～3 μ m is as cushion at the upper surface deposit thickness of described metal substrate, adopting electric pulp vapor phase method deposit thickness on described silicon dioxide layer then is the silicon nitride layer of 1～10 μ m, and described silicon dioxide layer and described silicon nitride layer constitute the heat conductive insulating layer jointly; Perhaps, adopting the normal pressure chemical vapor phase method is that the silicon dioxide layer of 2～10 μ m is separately as the heat conductive insulating layer at the upper surface deposit thickness of described metal substrate; Perhaps, adopting electric pulp vapor phase method is that the silicon nitride layer of 2～10 μ m is separately as the heat conductive insulating layer at the upper surface deposit thickness of described metal substrate;
(c) form metal level: the method deposit thickness on described heat conductive insulating layer with sputter is metallic aluminium or the silico-aluminum of 1～5 μ m, perhaps, is covered with Copper Foil on described heat conductive insulating layer; On litho machine, utilize the metal lithographic mask to carry out photoetching then, perhaps, adopt method for printing screen to form the figure of metal level; With wet etching process metallic aluminium or Copper Foil are carried out etching again, remaining metallic aluminium or Copper Foil constitute described metal level and anode contact and cathode contact after the etching;
(d) form welding resisting layer: the remainder of upper surface except that solder joint, chip and routing position at described metal level applies the described welding resisting layer of formation with screen printing mode;
(e) LED bare chip encapsulation: some groups of described LED bare chip formal dress or upside-down mounting are connected on the described metal level, constitute the connecting circuit of light source.
Further, further comprising the steps of afterwards in described step (e):
(g) form protective layer: on described LED bare chip and cover silica gel or resin on every side, form protective layer through hot setting, described protective layer covers described LED bare chip and the metal wire that is used to encapsulate or soldered ball.
Further, described LED bare chip is applied in the white light LEDs, and is further comprising the steps of between described step (e) and described step (g):
(f) form phosphor powder layer: on described LED bare chip, cover the fluorescent material that modulates in advance, form phosphor powder layer through hot setting again.
The invention has the beneficial effects as follows: because high-efficiency radiating LED illumination light source of the present invention comprises metal substrate, the upper surface of described metal substrate deposits the heat conductive insulating layer, deposit metal level on the described heat conductive insulating layer, the upper surface of described metal level removes solder joint, remainder outside chip and the routing position is coated with welding resisting layer, described heat conductive insulating layer is constituted by silicon dioxide layer or silicon nitride layer or silicon dioxide layer and silicon nitride layer, described metal level constitutes predefined circuit connection and figure according to the connection in series-parallel annexation of described LED bare chip, described LED bare chip is divided into some groups of formal dress or upside-down mounting on each described metal level, between the inner described LED bare chip of each group and between some groups of described LED bare chips all by the described metal level built-up circuit that is connected, described metal level is drawn anode contact and cathode contact, the present invention deposits described heat conductive insulating layer and described metal level by the manufacturing process of integrated circuit on described metal substrate, because the precision of manufacturing process height of integrated circuit, make the thickness of heat conductive insulating layer accurately to control, satisfying under the high voltage bearing situation, can reduce the thickness of described heat conductive insulating layer as far as possible, the thickness of heat conductive insulating layer of the present invention can be within 10 μ m, it only is the part of the heat conductive insulating layer thickness that forms of the manufacture method of conventional monolayers wiring board, even 1/tens, the material silica of the heat conductive insulating layer that adopts in the while integrated circuit technology and the thermal conductivity factor height of silicon nitride, make the heat conductivility excellence of heat conductive insulating layer of the present invention, the ensemble average thermal conductivity factor is 80～100 times of thermal conductivity factor of conventional aluminum substrate, therefore thermal conductivity improves greatly, therefore can reduce the size of heat-radiating substrate, help the miniaturization of light source; And the present invention directly will be divided into some groups described LED bare chip formal dress or upside-down mounting and be connected on the described metal level after forming described metal level on the described metal substrate, only just can become an independently light source by once encapsulating, the characteristics that need the secondary encapsulation with respect to prior art LED aluminium base light source, the present invention is only by once encapsulating the connection in series-parallel syntagmatic that just can realize between the LED bare chip, once the light source after the encapsulation directly be connected to drive circuit just can luminous work, simplified processing step, saved encapsulating material, save cost, made production efficiency significantly improve; The present invention is directly transferred to the heat of the luminous generation of described LED bare chip on the described metal level and by described metal substrate by described heat conductive insulating layer and is dispersed into the external world more in addition, heat transfer path also shortens dramatically compared to existing technology, the heat conduction of velocity is faster, heat conduction and radiating effect are better, prolonged the service life of LED bare chip, so high-efficiency radiating LED illumination light source cost of the present invention is low, good heat dissipation effect, production efficiency height, make the accuracy height;
Because mutual serial or parallel connection or connection in series-parallel are connected between the described LED bare chip of each group inside of high-efficiency radiating LED illumination light source of the present invention, mutual serial or parallel connection or connection in series-parallel are connected between the some groups of described LED bare chips, therefore each described LED bare chip can produce serial or parallel connection or connection in series-parallel multiple circuit connecting mode such as be connected each other, use and adjust freedom, can be widely used in handing over, direct current and height, in the light fixture of low pressure and different capacity, so high-efficiency radiating LED illumination light source of the present invention can be implemented in the many kinds of connected modes of LED on the aluminium base, applied range;
In like manner, adopt the high-efficiency radiating LED illumination light source of manufacture method manufacturing of the present invention to have above-mentioned advantage.
Description of drawings
Fig. 1 is the Facad structure schematic diagram of the high-efficiency radiating LED illumination light source of the embodiment of the invention;
Fig. 2 is the local structure for amplifying schematic diagram in I shown in Figure 1 place;
Fig. 3 is a B-B section structure schematic diagram shown in Figure 2;
Fig. 4, Fig. 5 are the section structure schematic diagrames of step (b) process in the manufacture method of embodiment of the invention high-efficiency radiating LED illumination light source;
Fig. 6, Fig. 7 are the section structure schematic diagrames of step (c) process in the manufacture method of embodiment of the invention high-efficiency radiating LED illumination light source
Fig. 8 is the section structure schematic diagram after step (d) is finished in the manufacture method of embodiment of the invention high-efficiency radiating LED illumination light source;
Section structure schematic diagram after step (e) is finished in the manufacture method of Fig. 9 embodiment of the invention high-efficiency radiating LED illumination light source.
The specific embodiment
As Fig. 1～shown in Figure 3, the high-efficiency radiating LED illumination light source of present embodiment is one to be applied to the light source of the bulkhead lamp capable of 220V alternating current, comprise LED bare chip 1, metal substrate 2, described LED bare chip 1 is the bipolar electrode chip, described LED bare chip 1 comprises substrate 10 and N type epitaxial loayer 11, P type epitaxial loayer 12, described substrate 10 is aluminium oxide (sapphire, Al
2O
3) substrate, certain described substrate 10 also can be the substrate of GaAs (GaAs) or carborundum other materials such as (SiC), described metal substrate 2 is an aluminium base, thickness is 2mm, can certainly adopt copper base, the thickness of described metal substrate 2 can be 1～3mm, the upper surface of described metal substrate 2 deposits the heat conductive insulating layer, deposit metal level 6 on the described heat conductive insulating layer, the upper surface of described metal level 6 removes solder joint, remainder outside chip and the routing position is coated with welding resisting layer 8, to avoid short circuit and mistake weldering between the different described metal level 6, can also prevent to get an electric shock, described heat conductive insulating layer is constituted by silicon dioxide layer 30 and silicon nitride layer 31, the withstand voltage of described heat conductive insulating layer is greater than 1500V/min, certainly, the withstand voltage of described heat conductive insulating layer also can be worth as 3500V/min for other, the thickness of described heat conductive insulating layer is big more, its withstand voltage is also big more, described heat conductive insulating layer also can be made of separately silicon dioxide layer 30 or silicon nitride layer 31, described metal level 6 constitutes predefined circuit connection and figure according to the connection in series-parallel annexation of described LED bare chip 1, described P type epitaxial loayer 12, described N type epitaxial loayer 11 is respectively by two metal wires 43,45 are welded on two adjacent described metal levels 6 to realize the formal dress of led chip, the upper surface of described metal level 6 is a reflective surface, described metal level 6 adopts the aluminium manufacturing, thickness is 2 μ m, can certainly adopt copper or silico-aluminum manufacturing, the thickness of described metal level 6 can be 1～5 μ m, described metal level 6 is an electrode, electric conductor, be again the heat radiation conductive sheet of LED bare chip, or the refractive body of bottom surface light.
Described LED bare chip 1 is divided into 8 groups, every group comprises 25 described LED bare chips 1, all be connected in series between 25 described LED bare chips 1 of every group of inside, can certainly be connected according to mutual parallel connection or connection in series-parallel between the actual instructions for use described LED bare chip 1 that each group is inner, 8 groups of described LED bare chips 1 are further divided into two big groups, each big group respectively comprises 4 groups of described LED bare chips 1, series connection mutually between 4 groups of described LED bare chips 1, two big group is connected in parallel again, certainly respectively organize between the described LED bare chip 1 also fully mutually serial or parallel connection or adopt other connection in series-parallel compound modes, all by described metal level 6 built-up circuit that is connected, described metal level 6 is drawn anode contact 60 and cathode contact 61 between the inner described LED bare chip 1 of each group and between 8 groups of described LED bare chips 1.Be coated with phosphor powder layer 7 on the described LED bare chip 1; cover silica gel or resin around the described phosphor powder layer 7 and form protective layer 5; described protective layer 5 covers described phosphor powder layer 7, described LED bare chip 1 and the metal wire that is used to encapsulate or soldered ball; to prevent that metal wire from fractureing, the influence that can protect described LED bare chip 1 not changed by external environment simultaneously.
As Fig. 3～shown in Figure 9, the manufacture method of the high-efficiency radiating LED illumination light source of present embodiment may further comprise the steps:
(a) metal substrate preliminary treatment: the upper surface to described metal substrate 2 carries out the flat polish processing, so that deposition heat conductive insulating layer;
(b) form the heat conductive insulating layer: adopting the normal pressure chemical vapor phase method is that the silicon dioxide layer 30 of 1～3 μ m is as cushion at the upper surface deposit thickness of described metal substrate 2 under 350～450 ℃, so that the heat conductive insulating layer is tight with combining of described metal substrate 2, as shown in Figure 4, adopting electric pulp vapor phase method deposit thickness on described silicon dioxide layer 30 down at 200～350 ℃ then is the silicon nitride layer 31 of 1～10 μ m, described silicon dioxide layer 30 and described silicon nitride layer 31 common formation heat conductive insulating layers, make the withstand voltage of described heat conductive insulating layer greater than 1500V/min, the last sectional drawing that forms of this step as shown in Figure 5; Certainly, also can adopt the normal pressure chemical vapor phase method is that the silicon dioxide layer 30 of 2～10 μ m is separately as the heat conductive insulating layer at the upper surface deposit thickness of described metal substrate 2; Perhaps, adopting electric pulp vapor phase method is that the silicon nitride layer 31 of 2～10 μ m is separately as the heat conductive insulating layer at the upper surface deposit thickness of described metal substrate 2;
(c) form metal level: the method deposit thickness on described heat conductive insulating layer with sputter is the metallic aluminium of 1～5 μ m, can certainly the depositing silicon aluminium alloy, perhaps, on described heat conductive insulating layer, be covered with Copper Foil, as shown in Figure 6; On litho machine, utilize the metal lithographic mask to carry out photoetching then, perhaps, adopt method for printing screen to form the figure of metal level; With wet etching process metallic aluminium or Copper Foil are carried out etching again, remaining metallic aluminium or Copper Foil constitute described metal level 6 and anode contact 60 and cathode contact 61 after the etching, and the last sectional drawing that forms of this step as shown in Figure 7;
(d) form welding resisting layer: the remainder of upper surface except that solder joint, chip and routing reserved location at described metal level 6 applies the described welding resisting layer 8 of formation with screen printing mode, and the last sectional drawing that forms of this step as shown in Figure 8;
(e) LED bare chip encapsulation: be bonded on the described metal level 6 of described aluminium base 2 with the described substrate 10 usefulness ultrasonic bonds of some groups of described LED bare chips 1 or with silver slurry or tin, two electrode contacts of described LED bare chip 1 are welded on by two metal wires 43,45 respectively and carry out the formal dress encapsulation on the described metal level 6, constitute the connecting circuit of light source;
(f) form phosphor powder layer: use as white light LEDs, cover the fluorescent material that modulates in advance on the blue-ray LED bare chip 1 that is encapsulated on the described metal level 6, its thickness is 0.2～0.5mm, forms described phosphor powder layer 7 through hot setting again;
(g) form protective layer: on the described phosphor powder layer 7 on described LED bare chip 1 and relevant position on every side cover silica gel or resin; form protective layer 5 through hot setting; described protective layer 5 covers described LED bare chip 1 and the metal wire that is used to encapsulate 43,45; to prevent that metal wire from fractureing, the influence that can protect described LED bare chip 1 not changed by external environment simultaneously.
Among the present invention, the quantity of described LED bare chip 1 is not limited to described in the embodiment, the quantity of the described LED bare chip 1 of the number of packet of described LED bare chip 1 and every group of inside also is not limited to described in the embodiment, described LED bare chip 1 also can be single electrode chip, therefore described LED bare chip 1 both can formal dress also can upside-down mounting on each described metal level 6, making different friendships, direct current and height, in the light fixture of low pressure and different capacity (such as 12V direct current big-power solar street lamp, 220V alternating current large-power street lamp, light fixtures such as 220V AC LED fluorescent tube) can be provided with flexibly, applied range only illustrates among the embodiment.
When described LED bare chip 1 is single electrode chip, the substrate 10 of described LED bare chip 1 is GaAs or silicon carbide substrates, in described step (e), described substrate 10 usefulness silver slurry or tin are bonded on the described metal level 6 of described metal substrate 2, and an electrode contact of described LED bare chip 1 is welded on by metal wire and carries out the formal dress encapsulation on the described metal level 6.
When described LED bare chip 1 is flip-chip packaged, in described step (e), plant soldered ball on described metal level 6, on described soldered ball, described soldered ball is gold goal bolt or copper ball bolt or tin ball to the method by ultrasonic bond with described LED bare chip 1 upside-down mounting again.
The present invention has broken through the intrinsic thoughtcast of this area, manufacturing process by integrated circuit deposits described heat conductive insulating layer and described metal level 6 on described metal substrate 2, because the precision of manufacturing process height of integrated circuit, make the thickness of heat conductive insulating layer accurately to control, satisfying under the high voltage bearing situation, can reduce the thickness of described heat conductive insulating layer as far as possible, the thickness of heat conductive insulating layer of the present invention can be within 10 μ m, it only is the part of the heat conductive insulating layer thickness that forms of the manufacture method of conventional monolayers wiring board, even 1/tens, the material silica of the heat conductive insulating layer that adopts in the while integrated circuit technology and the thermal conductivity factor height of silicon nitride, make the heat conductivility excellence of heat conductive insulating layer of the present invention, the ensemble average thermal conductivity factor is 80～100 times of thermal conductivity factor of conventional aluminum substrate, therefore thermal conductivity improves greatly, therefore can reduce the size of heat-radiating substrate, help the miniaturization of light source; And the present invention directly will be divided into some groups described LED bare chip 1 formal dress or upside-down mounting and be connected on the described metal level 6 after forming described metal level 6 on the described metal substrate 2, only just can become an independently light source by once encapsulating, the characteristics that need the secondary encapsulation with respect to prior art LED aluminium base light source, the present invention is only by once encapsulating the connection in series-parallel syntagmatic that just can realize between the LED bare chip, once the light source after the encapsulation directly be connected to drive circuit just can luminous work, simplified processing step, saved encapsulating material, save cost, made production efficiency significantly improve; The present invention is directly transferred to the heat of described LED bare chip 1 luminous generation on the described metal level 6 and by described metal substrate 2 by described heat conductive insulating layer and is dispersed into the external world more in addition, heat transfer path also shortens dramatically compared to existing technology, the heat conduction of velocity is faster, heat conduction and radiating effect are better, prolonged the service life of LED bare chip, therefore low, good heat dissipation effect, production efficiency height of high-efficiency radiating LED illumination light source cost of the present invention, make the accuracy height; In addition, the described LED bare chip 1 of each of high-efficiency radiating LED illumination light source of the present invention can produce serial or parallel connection or connection in series-parallel multiple circuit connecting mode such as be connected each other, use to adjust freely, can be widely used in the light fixture of AC and DC such as street lamp, bulkhead lamp capable, LED fluorescent tube, general lighting lamp and high and low pressure and different capacity.
The present invention can be widely used in the led light source field.
Claims (10)
1, a kind of high-efficiency radiating LED illumination light source, comprise LED bare chip (1), described LED bare chip (1) comprises substrate (10) and N type epitaxial loayer (11), P type epitaxial loayer (12), it is characterized in that: described high-efficiency radiating LED illumination light source also comprises metal substrate (2), the upper surface of described metal substrate (2) deposits the heat conductive insulating layer, deposit metal level (6) on the described heat conductive insulating layer, the upper surface of described metal level (6) removes solder joint, remainder outside chip and the routing position is coated with welding resisting layer (8), described heat conductive insulating layer is constituted with silicon nitride layer (31) by silicon dioxide layer (30) or silicon nitride layer (31) or silicon dioxide layer (30), described metal level (6) constitutes predefined circuit connection and figure according to the connection in series-parallel annexation of described LED bare chip (1), described LED bare chip (1) is divided into some groups of formal dress or upside-down mounting on each described metal level (6), all by described metal level (6) built-up circuit that is connected, described metal level (6) is drawn anode contact (60) and cathode contact (61) between the inner described LED bare chip (1) of each group and between the some groups of described LED bare chips (1).
2, the light source of integrated LED chip according to claim 1; it is characterized in that: described LED bare chip (1) goes up and cover silica gel on every side or resin forms protective layer (5), and described protective layer (5) is with described LED bare chip (1) and metal wire that is used to encapsulate or soldered ball covering.
3, the light source of integrated LED chip according to claim 1; it is characterized in that: be coated with phosphor powder layer (7) on the described LED bare chip (1); cover silica gel or resin around the described phosphor powder layer (7) and form protective layer (5), described protective layer (5) covers described phosphor powder layer (7), described LED bare chip (1) and the metal wire that is used to encapsulate or soldered ball.
4, according to the light source of any described integrated LED chip of claim 1 to 3, it is characterized in that: mutual serial or parallel connection or connection in series-parallel are connected between the described LED bare chip (1) of each group inside, and mutual serial or parallel connection or connection in series-parallel are connected between the some groups of described LED bare chips (1).
5, according to any described high-efficiency radiating LED illumination light source of claim 1 to 3, it is characterized in that: described metal substrate (2) is aluminium base or copper base, the thickness of described metal substrate (2) is 1～3mm, the upper surface of described metal level (6) is a reflective surface, described metal level (6) adopts copper or aluminium or silico-aluminum manufacturing, and the thickness of described metal level (6) is 1～5 μ m.
6, according to any described high-efficiency radiating LED illumination light source of claim 1 to 3, it is characterized in that: the withstand voltage of described heat conductive insulating layer is greater than 1500V/min or 3500V/min.
7, according to any described high-efficiency radiating LED illumination light source of claim 1 to 3, it is characterized in that: described LED bare chip (1) is single electrode chip or bipolar electrode chip.
8, the manufacture method of the described high-efficiency radiating LED illumination light source of a kind of claim 1 is characterized in that: may further comprise the steps:
(a) metal substrate preliminary treatment: the upper surface to described metal substrate (2) carries out the flat polish processing;
(b) form the heat conductive insulating layer: adopting the normal pressure chemical vapor phase method is that the silicon dioxide layer (30) of 1～3 μ m is as cushion at the upper surface deposit thickness of described metal substrate (2), adopting electric pulp vapor phase method to go up deposit thickness at described silicon dioxide layer (30) then is the silicon nitride layer (31) of 1～10 μ m, and described silicon dioxide layer (30) and described silicon nitride layer (31) constitute the heat conductive insulating layer jointly; Perhaps, adopting the normal pressure chemical vapor phase method is that the silicon dioxide layer (30) of 2～10 μ m is separately as the heat conductive insulating layer at the upper surface deposit thickness of described metal substrate (2); Perhaps, adopting electric pulp vapor phase method is that the silicon nitride layer (31) of 2～10 μ m is separately as the heat conductive insulating layer at the upper surface deposit thickness of described metal substrate (2);
(c) form metal level: the method deposit thickness on described heat conductive insulating layer with sputter is metallic aluminium or the silico-aluminum of 1～5 μ m, perhaps, is covered with Copper Foil on described heat conductive insulating layer; On litho machine, utilize the metal lithographic mask to carry out photoetching then, perhaps, adopt method for printing screen to form the figure of metal level; With wet etching process metallic aluminium or Copper Foil are carried out etching again, remaining metallic aluminium or Copper Foil constitute described metal level (6) and anode contact (60) and cathode contact (61) after the etching;
(d) form welding resisting layer: the remainder of upper surface except that solder joint, chip and routing position at described metal level (6) applies formation described welding resisting layer (8) with screen printing mode;
(e) LED bare chip encapsulation: some groups of described LED bare chip (1) formal dress or upside-down mounting are connected on the described metal level (6), constitute the connecting circuit of light source.
9, the manufacture method of integrated LED chip light source according to claim 8 is characterized in that: (e) is further comprising the steps of afterwards in described step:
(g) form protective layer: go up and cover silica gel or resin on every side at described LED bare chip (1), form protective layer (5) through hot setting, described protective layer (5) is with described LED bare chip (1) and metal wire that is used to encapsulate or soldered ball covering.
10, the manufacture method of integrated LED chip light source according to claim 9 is characterized in that: described LED bare chip (1) is applied in the white light LEDs, and is further comprising the steps of between described step (e) and described step (g):
(f) form phosphor powder layer: go up the fluorescent material that covering modulates in advance at described LED bare chip (1), form phosphor powder layer (7) through hot setting again.
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