CN202200170U - Grinding head and chemical mechanical grinding equipment - Google Patents

Grinding head and chemical mechanical grinding equipment Download PDF

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Publication number
CN202200170U
CN202200170U CN201120235413XU CN201120235413U CN202200170U CN 202200170 U CN202200170 U CN 202200170U CN 201120235413X U CN201120235413X U CN 201120235413XU CN 201120235413 U CN201120235413 U CN 201120235413U CN 202200170 U CN202200170 U CN 202200170U
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China
Prior art keywords
grinding
retaining ring
abrasive grains
wafer
chemical
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Expired - Fee Related
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CN201120235413XU
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Chinese (zh)
Inventor
王庆玲
邵群
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Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Shanghai Corp
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Priority to CN201120235413XU priority Critical patent/CN202200170U/en
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The utility model provides a grinding head and chemical mechanical grinding equipment. The grinding head comprises a cover part, a membrane and a retaining ring, wherein a breather pipe line is arranged on the cover part; the membrane is connected with an opening of the cover part in a sealing way, and the cover part and the membrane form a pressuring room in an enclosing way; and one end face of the retaining ring is connected with the cover part, and a wafer is fixed in the retaining ring; and the other end face of the retaining ring is provided with a plurality of grinding particles. The grinding particles are formed on the end face of the retaining ring for fixing the wafer, which is contacted with a fixed particles grinding pad as the grinding head is arranged, so that when the wafer is ground, the function of grinding adjustment on the fixed particles grinding pad is realized; therefore, the aim of improving the grinding efficiency is achieved.

Description

Grinding head and chemical-mechanical grinding device
Technical field
The utility model relates to a kind of integrated circuit technology manufacturing equipment, relates in particular to a kind of grinding head and chemical-mechanical grinding device.
Background technology
Along with the size of semiconductor element characteristic is contracted to the scope of deep-sub-micrometer gradually, in order to ensure the reliability of element, when making integrated circuit or other electronic installations, providing extremely, smooth wafer surface or substrate surface is crucial.
In semiconductor technology, chemical mechanical milling method (Chemical Mechanical Polishing, CMP, chemical mechanical polishing method) is the technology of the normal comprehensive planarization of using now.Generally speaking; In the process of chemically mechanical polishing; Be to contain under the situation of grinding slurry (Slurry) of chemical assistant (Reagent) and abrasive grains in supply; Wafer fixed surface to be ground on the grinding pad that rotating speed is controlled, is reached the purpose of planarization through the relative motion between wafer and the grinding pad.In other words, when wafer rotated on grinding pad with the mode of pushing, the abrasive grains in wafer surface and the slurry can contact with each other and produce friction, so can make wafer surface produce consume, and make its surface smooth gradually.
The most frequently used CMP processing procedure uses the lapping liquid of spray cloth on polishing pad, so that help to make the wafer smoothing and with predictable mode complanation.The complanation attribute of lapping liquid generally is made up of abrasion friction component and chemical reaction component.The abrasion friction component comes from the abrasive grains that is suspended in the lapping liquid, and said abrasive grains can increase the abrasive characteristic of polishing pad when making CONTACT WITH FRICTION with crystal column surface.The material generation chemical reaction of chemical reaction component and said crystal column surface is through softening with the crystal column surface generation chemical reaction that will polish or decomposing.Abrasion friction component and chemical reaction component help grinding pad planarization crystal column surface.
Lapping liquid the mode to polishing pad of distributing can be influenced grinding and the effect of chemical characteristic of lapping liquid when helping polishing significantly, and this can influence clearance again.Traditional lapping liquid is sent to crystal column surface.Polishing material has concavo-convex surface usually, comprises a plurality of very little pit and grooves that are formed on the pad interface.Pit on the said convex-concave surface and groove can be collected lapping liquid, so that be sent to just polished crystal column surface as reservoir.Although the grinding fluid power that uses in the chemical mechanical planarization process usually provides some benefit, also can cause disadvantageous side effect.
Traditional lapping liquid compartment system does not generally provide the even distribution of lapping liquid on wafer surface; For example most of lapping liquid compartment systems offer new lapping liquid at the edge of wafer; Be transported to the center of wafer then through the rotation of grinding pad and wafer, the solid abrasive particle in the part lapping liquid can precipitate in lapping liquid solution or assemble.When then lapping liquid was transported to crystal circle center, the abrasive characteristic of lapping liquid can weaken.Contact with excessive lapping liquid if the part of wafer exposes, then this part can be got rid of at faster speed.Thereby lapping liquid can make more abrasion friction masterpiece be used for the edge of wafer, thereby can get rid of material quickly, and the slurry that is positioned at crystal circle center's partial failure then can be removed material more slowly, causes forming the crystal column surface of inhomogeneous polishing.In addition, in polishing process, along with the consumption of lapping liquid can produce useless particle, these useless particles comprise that the grinding of inefficacy is with the material of removing on particle and the wafer.The grinding of losing efficacy is not easy because of chemical reaction decomposes with particle, then can be deposited on crystal column surface with the formation of useless particle, get in the groove and pit in the polishing pad, influences grinding effect and efficient.
Therefore; Produced a kind of equipment of fully effectively removing crystal column surface; Chemical-mechanical grinding device adopts immobilized particles grinding pad (Fixed Abrasive Polishing Pad); The abrasive grains that does not need free floating can not cause particulate pollutant excessive on the wafer surface yet, and chemically mechanical polishing is cleaned more.Adopting immobilized particles grinding pad (Fixed Abrasive Pad) is the technological thought of a novelty; Said immobilized particles grinding pad has been gathered abrasive grains and grinding pad; Can reach the better grinding effect, more and more important to 45nm level even following technology.Abrasive grains on the grinding pad has greatly influenced lapping process, and the wearing and tearing of abrasive grains or the meeting that comes off reduce grinding rate even wafer is caused scuffing.
The patent No. is that the United States Patent (USP) of US2002/0049027A1 discloses a kind of immobilized particles grinding pad that is used on the chemical-mechanical grinding device, and the described immobilized particles grinding pad of this patent has solved above-mentioned technical problem.Publication number is fixedly abrasive chemical-mechanical grinding device and its implementation that the Chinese patent of 1438931A discloses a kind of swing; Chemical-mechanical grinding device described in this patent comprises having fixedly grinding pad, feed cylinder and the withdrawal cylinder of abrasive grains; And said grinding pad motion is controlled in the configuration that utilizes the reel operation; Thereby in extremely short time and few labour the used part of grinding pad is replaced by new grinding pad, continues wafer is carried out cmp.
Yet; Fixedly the abrasive grains grinding pad has problems equally, when fixedly abrasive grains anchors on the base band of grinding pad, is molded into to contact with crystal column surface from making and can touches air between beginning to grind; Extraneous malaria and moisture can make fixedly, and abrasive grains comes off from base band; Make the fixedly abrasive grains skewness of grinding pad, and because immobilized particles grinding pad cracky can not adopt the grinding pad adjuster (Pad conditioner) of traditional diamond material to grind; Can reduce grinding efficiency thereby make in process of lapping, influence the uniformity of wafer.
The utility model content
The technical problem that the utility model will solve is, a kind of grinding head and corresponding milling apparatus with grinding pad regulatory function is provided, and in damaging fixed abrasive grains grinding pad not, regulates grinding pad, improves grinding efficiency.
For addressing the above problem, the utility model provides a kind of grinding head, is used to grind wafer, comprising: cover portion, and it is provided with vent line; Film is tightly connected with the opening part of said cover portion, and said cover portion and said film are around forming the compression chamber; Retaining ring, one end is connected with said cover portion, and said wafer is fixed in the said retaining ring; Be formed with abrasive grains on the other end of said retaining ring.
Further, in described grinding head, said abrasive grains is uniformly distributed in the Zone Full of the other end of said retaining ring.
Further, in described grinding head, said abrasive grains is distributed in the subregion of said retaining ring other end.
Further, in described grinding head, said abrasive grains and said retaining ring are formed in one.
Further, in described grinding head, the material of said abrasive grains is a polyphenylene sulfide.
Further, in described grinding head, said abrasive grains is of a size of 3~10mm.
Further, in described grinding head, said film is a rubber membrane.
The utility model also provides a kind of chemical-mechanical grinding device, comprising: the immobilized particles grinding pad; Grind supply line, its pipeline outlet is towards said immobilized particles grinding pad; And described grinding head, it is positioned at said immobilized particles grinding pad top, and said grinding head below is wafer fixedly.
Further, in described chemical-mechanical grinding device, said abrasive grains is uniformly distributed in the Zone Full of the other end of said retaining ring.
Further, in described chemical-mechanical grinding device, said abrasive grains is distributed in the subregion of the other end of said retaining ring.
Further, in described chemical-mechanical grinding device, said abrasive grains and said retaining ring are formed in one.
Further, in described chemical-mechanical grinding device, the material of said abrasive grains is a polyphenylene sulfide.
Further, in described chemical-mechanical grinding device, said abrasive grains is of a size of 3mm-10mm.
Further, in described chemical-mechanical grinding device, said film is a rubber membrane.
In sum; The chemical-mechanical grinding device of the utility model through a kind of grinding head being provided and comprising above-mentioned grinding head; In said grinding head; The other end (promptly with the contacted end face of grinding pad) that is used for fixing the retaining ring (Retaining Ring) of wafer is provided with abrasive grains, and the material of this abrasive grains for example is a polyphenylene sulfide, because the immobilized particles grinding pad is different with traditional grinding pad; Damaged easily, so can not use the grinding pad adjuster that this immobilized particles grinding pad surface is become coarse.But the accessory substance that produces in the process of lapping can rest on immobilized particles grinding pad surface, thereby crystal column surface is caused scratch.And on retaining ring, set up abrasive grains; Can slightly rub to fixing abrasive grains surface simultaneously in polishing, thereby when grinding wafer, remove surperficial accessory substance; The immobilized particles grinding pad is played the effect of regulating of grinding; Reduce chemical mechanical planarization process to the defective that wafer causes, improved grinding efficiency, and then improve the chip yield.
Description of drawings
Fig. 1 is the cross-sectional view of grinding head among the utility model one embodiment.
Fig. 2 is the structural representation of looking up of retaining ring among the utility model one embodiment.
Fig. 3 is the structural representation of chemical-mechanical grinding device among the utility model one embodiment.
The specific embodiment
For the content that makes the utility model is clear more understandable,, the content of the utility model is described further below in conjunction with Figure of description.Certainly the utility model is not limited to this specific embodiment, and the general replacement that those skilled in the art knew also is encompassed in the protection domain of the utility model.Secondly, the utility model utilizes sketch map to carry out detailed statement, and when the utility model instance was detailed, for the ease of explanation, sketch map did not amplify according to general ratio is local, should be with this as the qualification to the utility model.
The utility model is through providing a kind of grinding head; Its retaining ring (Retaining Ring) that is used for fixing wafer is provided with abrasive grains with the contacted end face of grinding pad; Thereby when grinding wafer; The immobilized particles grinding pad is played the effect of grinding adjusting, thereby reached the purpose that improves grinding efficiency.
Fig. 1 is the cross-sectional view of grinding head among the utility model one embodiment, and is as shown in Figure 1, and the structure of grinding head 10 comprises in the utility model: cover portion 101, film (membrane) 105, retaining ring 107.Wherein, cover portion 101 is provided with vent line 103; Film 105 is tightly connected with the opening part of said cover portion 101, and said cover portion 101 and said film 105 are around forming compression chamber 102; One end face of retaining ring 107 is connected with said cover portion 101, and said wafer 300 is fixed in the said retaining ring 107 in the ring; The other end of said retaining ring 107 is formed with abrasive grains 107a.
Fig. 2 is the structural representation of looking up of retaining ring among the utility model one embodiment.As shown in Figure 2, said abrasive grains 107a can be uniformly distributed in the Zone Full of the other end (also can be described as bottom surface) of said retaining ring 107, in addition, can also be distributed in the subregion of said retaining ring 107 other ends; In process of lapping, grinding head 10 drives wafer 300 and moves horizontally with retaining ring 107 high speed rotations and relative fixed particle grinding pad, so the abrasion site of abrasive grains 107a is not limited, its position that is distributed in the bottom surface of retaining ring 107 is not limited yet.
In the present embodiment, said abrasive grains 107a and said retaining ring 107 are formed in one, and to reduce cost of manufacture, for example, can when forming retaining ring 107, utilize grinding tool to form abrasive grains 107a in retaining ring 107 bottoms.
Preferable, the material of said abrasive grains 107a is that (Polyphenylene Sulfide, PPS), this material hardness is lower than diamond to polyphenylene sulfide, in process of lapping, can not produce damage to the immobilized particles grinding pad, is difficult for simultaneously being corroded by chemical reagent.Said abrasive grains 107a is preferably dimensioned to be 3mm~10mm, and above-mentioned preferred size can reduce immobilized particles grinding pad generation damage, and improves grinding efficiency.
In the present embodiment, said film 105 is a rubber membrane, and said film 105 expands under the effect of air pressure, and the wafer 300 that promotes its below contacts with the immobilized particles grinding pad.Certainly, in other embodiment of the utility model, said film 105 also can be processed by other rubber-like material.
Fig. 3 is the structural representation of chemical-mechanical grinding device among the utility model one embodiment.As shown in Figure 3, the utility model also provides a kind of chemical-mechanical grinding device, comprising: immobilized particles grinding pad 30; Grind supply line 20, its pipeline outlet is towards said immobilized particles grinding pad 30; And grinding head 10; Be disposed at and be positioned on the said immobilized particles grinding pad 30, said grinding head 10 belows are wafer 300 fixedly, and the immobilized particles grinding pad is to be fixed between two cylinders 302 in addition; After wafer 300 is ground to certain hour; Cylinder 302 takes the immobilized particles grinding pad to and moves, and wafer 300 is contacted with new immobilized particles grinding pad, to improve grinding efficiency.
Continuation is with reference to figure 3, and combines Fig. 1, when using the said chemical-mechanical grinding device of the utility model; Wafer 300 is fixed in the interior ring of maintenance 107; Grinding head 10 drives wafer 300 and moves to immobilized particles grinding pad 30 tops, feeds gas through vent line 103 to compression chamber 102, increases compression chamber's 102 internal pressures; Film 105 expands under the effect of air pressure; The wafer 300 that promotes its below contacts with immobilized particles grinding pad 30, and grinding head 10 drives accomplishes chemical mechanical planarization process when wafer 300 rotates, when wafer 300 is ground; The abrasive grains 107a that is positioned at retaining ring 107 belows regulates immobilized particles grinding pad 30 simultaneously, improves the grinding efficiency of immobilized particles grinding pad 30.
In sum; The chemical-mechanical grinding device that the utility model provides a kind of grinding head and comprises above-mentioned grinding head; The retaining ring of the fixedly wafer of said grinding head and immobilized particles grinding pad bottom face in contact are provided with abrasive grains, and the material of this abrasive grains for example is a polyphenylene sulfide, because the immobilized particles grinding pad is different with traditional grinding pad; Damaged easily, so can not use the grinding pad adjuster that the grinding pad surface is become coarse.But the accessory substance that produces in the process of lapping can rest on immobilized particles grinding pad surface, thereby crystal column surface is caused scratch.And on retaining ring, set up abrasive grains; Can slightly rub to fixing abrasive grains surface simultaneously in polishing; Thereby when grinding wafer, remove the accessory substance on surface, the immobilized particles grinding pad is played the effect of regulating of grinding; Reduce cmp to the damage that wafer causes, improved grinding efficiency.
Though the utility model discloses as above with preferred embodiment; Right its is not in order to limit the utility model; Has common knowledge the knowledgeable in the technical field under any; In spirit that does not break away from the utility model and scope, when can doing a little change and retouching, so the protection domain of the utility model is as the criterion when looking claims person of defining.

Claims (14)

1. a grinding head is used to grind wafer, comprising:
Cover portion, it is provided with vent line;
Film is tightly connected with the opening part of said cover portion, and said cover portion and said film are around forming the compression chamber;
Retaining ring, one end is connected with said cover portion, and said wafer is fixed in the said retaining ring;
It is characterized in that, be formed with abrasive grains on the other end of said retaining ring.
2. grinding head as claimed in claim 1 is characterized in that said abrasive grains is uniformly distributed in the Zone Full of the other end of said retaining ring.
3. grinding head as claimed in claim 1 is characterized in that said abrasive grains is distributed in the subregion of said retaining ring other end.
4. like any described grinding head in the claim 1 to 3, it is characterized in that said abrasive grains and said retaining ring are formed in one.
5. grinding head as claimed in claim 1 is characterized in that, the material of said abrasive grains is a polyphenylene sulfide.
6. grinding head as claimed in claim 1 is characterized in that said abrasive grains is of a size of 3~10mm.
7. grinding head as claimed in claim 1 is characterized in that, said film is a rubber membrane.
8. a chemical-mechanical grinding device is characterized in that, comprising:
The immobilized particles grinding pad;
Grind supply line, its pipeline outlet is towards said immobilized particles grinding pad; And
Grinding head as claimed in claim 1, it is positioned at said immobilized particles grinding pad top, and said grinding head below is wafer fixedly.
9. chemical-mechanical grinding device as claimed in claim 8 is characterized in that said abrasive grains is uniformly distributed in the Zone Full of the other end of said retaining ring.
10. chemical-mechanical grinding device as claimed in claim 8 is characterized in that said abrasive grains is distributed in the subregion of the other end of said retaining ring.
11., it is characterized in that said abrasive grains and said retaining ring are formed in one like any described chemical-mechanical grinding device in the claim 8 to 10.
12. chemical-mechanical grinding device as claimed in claim 8 is characterized in that, the material of said abrasive grains is a polyphenylene sulfide.
13. chemical-mechanical grinding device as claimed in claim 8 is characterized in that, said abrasive grains is of a size of 3~10mm.
14. chemical-mechanical grinding device as claimed in claim 8 is characterized in that, said film is a rubber membrane.
CN201120235413XU 2011-07-05 2011-07-05 Grinding head and chemical mechanical grinding equipment Expired - Fee Related CN202200170U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201120235413XU CN202200170U (en) 2011-07-05 2011-07-05 Grinding head and chemical mechanical grinding equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201120235413XU CN202200170U (en) 2011-07-05 2011-07-05 Grinding head and chemical mechanical grinding equipment

Publications (1)

Publication Number Publication Date
CN202200170U true CN202200170U (en) 2012-04-25

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CN201120235413XU Expired - Fee Related CN202200170U (en) 2011-07-05 2011-07-05 Grinding head and chemical mechanical grinding equipment

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103529484A (en) * 2012-07-06 2014-01-22 上海宏力半导体制造有限公司 Detection device for fall-off of pen-shaped sponge
CN108145593A (en) * 2017-12-28 2018-06-12 德淮半导体有限公司 Wafer processing apparatus and its method of work

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103529484A (en) * 2012-07-06 2014-01-22 上海宏力半导体制造有限公司 Detection device for fall-off of pen-shaped sponge
CN103529484B (en) * 2012-07-06 2016-09-21 上海华虹宏力半导体制造有限公司 A kind of form of a stroke or a combination of strokes sponge drops detection device
CN108145593A (en) * 2017-12-28 2018-06-12 德淮半导体有限公司 Wafer processing apparatus and its method of work

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GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING

Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION

Effective date: 20130419

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING

TR01 Transfer of patent right

Effective date of registration: 20130419

Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing

Patentee after: Semiconductor Manufacturing International (Beijing) Corporation

Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18

Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120425

Termination date: 20180705