CN202063730U - 一种电子束及渣滤熔炼提纯多晶硅的设备 - Google Patents
一种电子束及渣滤熔炼提纯多晶硅的设备 Download PDFInfo
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- CN202063730U CN202063730U CN2011201554815U CN201120155481U CN202063730U CN 202063730 U CN202063730 U CN 202063730U CN 2011201554815 U CN2011201554815 U CN 2011201554815U CN 201120155481 U CN201120155481 U CN 201120155481U CN 202063730 U CN202063730 U CN 202063730U
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102145894A (zh) * | 2011-05-16 | 2011-08-10 | 大连隆田科技有限公司 | 一种电子束及渣滤熔炼提纯多晶硅的方法及设备 |
CN103086379A (zh) * | 2013-01-23 | 2013-05-08 | 大连理工大学 | 一种电子束熔炼用坩埚的辐射拦截装置 |
CN103435043A (zh) * | 2013-08-28 | 2013-12-11 | 青岛隆盛晶硅科技有限公司 | 电子束熔炼与长晶技术耦合制备多晶硅的装置及工艺方法 |
TWI580919B (zh) * | 2015-10-14 | 2017-05-01 | 國立清華大學 | 複合坩鍋結構及其電弧加熱過程中的高溫絕熱方法 |
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2011
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102145894A (zh) * | 2011-05-16 | 2011-08-10 | 大连隆田科技有限公司 | 一种电子束及渣滤熔炼提纯多晶硅的方法及设备 |
CN103086379A (zh) * | 2013-01-23 | 2013-05-08 | 大连理工大学 | 一种电子束熔炼用坩埚的辐射拦截装置 |
CN103086379B (zh) * | 2013-01-23 | 2014-12-10 | 大连理工大学 | 一种电子束熔炼用坩埚的辐射拦截装置 |
CN103435043A (zh) * | 2013-08-28 | 2013-12-11 | 青岛隆盛晶硅科技有限公司 | 电子束熔炼与长晶技术耦合制备多晶硅的装置及工艺方法 |
CN103435043B (zh) * | 2013-08-28 | 2015-05-27 | 青岛隆盛晶硅科技有限公司 | 电子束熔炼与长晶技术耦合制备多晶硅的装置及工艺方法 |
TWI580919B (zh) * | 2015-10-14 | 2017-05-01 | 國立清華大學 | 複合坩鍋結構及其電弧加熱過程中的高溫絕熱方法 |
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Owner name: QINGDAO LONGSHENG CRYSTAL SILICONE TECHNOLOGY CO., Free format text: FORMER OWNER: DALIAN LONGTIAN TECH. CO., LTD. Effective date: 20120424 |
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Effective date of registration: 20120424 Address after: Pudong solar energy industry base in Jimo city of Shandong Province, Qingdao City, 266000 Patentee after: Qingdao Longsheng Crystalline Silicon Science & Technology Co., Ltd. Address before: High tech Industrial District of Dalian City, Liaoning province 116025 Lixian Street No. 32 B block 508 Patentee before: Dalian Longtian Tech. Co., Ltd. |
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Effective date of registration: 20160504 Address after: 116025 Liaoning city of Dalian province high tech Industrial Park, Lixian Street No. 32 block B room 508-2 Patentee after: Dalian Longsheng Technology Co., Ltd. Address before: Pudong solar energy industry base in Jimo city of Shandong Province, Qingdao City, 266000 Patentee before: Qingdao Longsheng Crystalline Silicon Science & Technology Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111207 Termination date: 20190516 |