CN201981012U - 一种电子束高效提纯多晶硅粉体的设备 - Google Patents
一种电子束高效提纯多晶硅粉体的设备 Download PDFInfo
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- CN201981012U CN201981012U CN2011200308743U CN201120030874U CN201981012U CN 201981012 U CN201981012 U CN 201981012U CN 2011200308743 U CN2011200308743 U CN 2011200308743U CN 201120030874 U CN201120030874 U CN 201120030874U CN 201981012 U CN201981012 U CN 201981012U
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- 238000010894 electron beam technology Methods 0.000 title claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 29
- 239000011863 silicon-based powder Substances 0.000 title claims abstract description 13
- 239000000843 powder Substances 0.000 claims abstract description 61
- 238000003723 Smelting Methods 0.000 claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- 230000000903 blocking effect Effects 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910002804 graphite Inorganic materials 0.000 claims description 15
- 239000010439 graphite Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000002826 coolant Substances 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- 238000010926 purge Methods 0.000 claims description 5
- 239000004484 Briquette Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 abstract description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 11
- 239000011574 phosphorus Substances 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 10
- 238000005272 metallurgy Methods 0.000 abstract description 6
- 238000007711 solidification Methods 0.000 abstract description 6
- 230000008023 solidification Effects 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000010923 batch production Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 23
- 230000008018 melting Effects 0.000 description 10
- 238000002844 melting Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 239000007788 liquid Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 235000013312 flour Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000000746 purification Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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Abstract
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CN2011200308743U CN201981012U (zh) | 2011-01-29 | 2011-01-29 | 一种电子束高效提纯多晶硅粉体的设备 |
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CN2011200308743U CN201981012U (zh) | 2011-01-29 | 2011-01-29 | 一种电子束高效提纯多晶硅粉体的设备 |
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CN201981012U true CN201981012U (zh) | 2011-09-21 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102126726A (zh) * | 2011-01-29 | 2011-07-20 | 大连隆田科技有限公司 | 一种电子束高效提纯多晶硅粉体的方法及设备 |
CN103086379A (zh) * | 2013-01-23 | 2013-05-08 | 大连理工大学 | 一种电子束熔炼用坩埚的辐射拦截装置 |
CN103420380A (zh) * | 2013-08-28 | 2013-12-04 | 青岛隆盛晶硅科技有限公司 | 电子束熔炼与定向凝固技术耦合制备多晶硅的方法及装置 |
CN104649276A (zh) * | 2013-11-22 | 2015-05-27 | 青岛隆盛晶硅科技有限公司 | 电子束熔炼高效去除多晶硅中杂质氧的方法及其装置 |
CN104651929A (zh) * | 2013-11-22 | 2015-05-27 | 青岛隆盛晶硅科技有限公司 | 一种电子束熔炼多晶硅除氧与铸锭耦合的方法及设备 |
CN116812931A (zh) * | 2023-06-13 | 2023-09-29 | 辽宁中色新材科技有限公司 | 一种绿色环保的二碳化三钛MXene材料生产工艺 |
-
2011
- 2011-01-29 CN CN2011200308743U patent/CN201981012U/zh not_active Expired - Fee Related
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102126726A (zh) * | 2011-01-29 | 2011-07-20 | 大连隆田科技有限公司 | 一种电子束高效提纯多晶硅粉体的方法及设备 |
CN103086379A (zh) * | 2013-01-23 | 2013-05-08 | 大连理工大学 | 一种电子束熔炼用坩埚的辐射拦截装置 |
CN103086379B (zh) * | 2013-01-23 | 2014-12-10 | 大连理工大学 | 一种电子束熔炼用坩埚的辐射拦截装置 |
CN103420380A (zh) * | 2013-08-28 | 2013-12-04 | 青岛隆盛晶硅科技有限公司 | 电子束熔炼与定向凝固技术耦合制备多晶硅的方法及装置 |
CN103420380B (zh) * | 2013-08-28 | 2015-06-03 | 青岛隆盛晶硅科技有限公司 | 电子束熔炼与定向凝固技术耦合制备多晶硅的方法及装置 |
CN104649276A (zh) * | 2013-11-22 | 2015-05-27 | 青岛隆盛晶硅科技有限公司 | 电子束熔炼高效去除多晶硅中杂质氧的方法及其装置 |
CN104651929A (zh) * | 2013-11-22 | 2015-05-27 | 青岛隆盛晶硅科技有限公司 | 一种电子束熔炼多晶硅除氧与铸锭耦合的方法及设备 |
CN104651929B (zh) * | 2013-11-22 | 2018-08-21 | 青岛昌盛日电太阳能科技股份有限公司 | 一种电子束熔炼多晶硅除氧与铸锭耦合的方法及设备 |
CN104649276B (zh) * | 2013-11-22 | 2018-09-25 | 青岛昌盛日电太阳能科技股份有限公司 | 电子束熔炼高效去除多晶硅中杂质氧的方法及其装置 |
CN116812931A (zh) * | 2023-06-13 | 2023-09-29 | 辽宁中色新材科技有限公司 | 一种绿色环保的二碳化三钛MXene材料生产工艺 |
CN116812931B (zh) * | 2023-06-13 | 2024-05-10 | 嘉迈(辽宁)新材料有限公司 | 一种绿色环保的二碳化三钛MXene材料生产工艺 |
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Effective date of registration: 20160713 Address after: Dalian high tech park, 116025 Liaoning province Lixian Street No. 32 B-508 Patentee after: Tan Yi Address before: High tech Industrial District of Dalian City, Liaoning province 116025 Lixian Street No. 32 B-508 Patentee before: Dalian Longsheng Technology Co., Ltd. |
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