Deposit cavity
Technical field
The utility model relates to semiconductor fabrication, relates in particular to a kind of deposit cavity.
Background technology
Physical vapor deposition (Physical Vapor Deposition, PVD) technology is under vacuum condition, adopt physical method, material source (solid or liquid) surface is gasificated into gaseous atom, molecule or partial ionization becomes ion, and, has the technology of the film of certain specific function in the matrix surface deposition by low-pressure gas (or plasma body) process.
Autoionization plasma body (self ionized plasma) is a kind of physical gas-phase deposite method, Figure 1 shows that the sectional view of the deposit cavity that adopts the autoionization plasma technique, this deposit cavity comprises well heater (not showing among Fig. 1), pedestal 110 and seat ring 120, described pedestal 110 is arranged on the described well heater, and described seat ring 120 links to each other with described pedestal 110.
As shown in Figure 2, the edge 111 of described pedestal 110 is step-like, and the edge 111 of the described relatively pedestal 110 of central area 112 of described pedestal 110 raises up, and the edge 111 of described pedestal 110 is provided with projection 113.
As shown in Figure 3, ring 121 and outer shroud 122 in described seat ring 120 is provided with, described outer shroud 122 be looped around described in outside the ring 121, and with described in ring 121 be step-like and be connected, ring 121 described relatively outer shrouds 122 raise up in described, are provided with groove 123 in the described interior ring 121; Described groove 123 is complementary with described projection 113, and when described seat ring 120 linked to each other with described pedestal 110, the projection 113 of described pedestal 110 was inserted in the groove 123 of described seat ring 120, slides in order to prevent the described relatively pedestal 110 of described seat ring 120, as shown in Figure 1; Described pedestal 110 is except that its bottom face, and projection 113 surfaces of remaining surface and described pedestal 110 all scribble aluminium lamination, and described seat ring 120 adopts stupalith to make.
During deposit film, applying forceful electric power on the described pedestal 110 presses, wafer (not showing among Fig. 1) is supported on the described interior ring 121, because described seat ring 120 adopts stupalith to make, can prevent that described wafer and described pedestal 110 from electrically contacting, but, the blind end 124 of described groove 123 is extremely thin, and described seat ring 120 will clean once at set intervals, every cleaning once just to blind end 124 wearing and tearing of described groove 123 once, makes the blind end 124 of described groove 123 more and more thinner, this forceful electric power that causes easily being applied on the described pedestal 110 presses the blind end 124 with described groove 123 to puncture, described wafer and described pedestal 110 are electrically contacted, thereby damage described wafer, experiment shows, if electrical breakdowns take place the blind end 124 of described groove 123, can cause in the described wafer 90% chip rejection.
The utility model content
The purpose of this utility model is to provide a kind of deposit cavity, adopts contactor segment to prevent both relatively sliding between seat ring and the pedestal, can prevent seat ring by electrical breakdown, thereby prevent that wafer and pedestal from electrically contacting.
To achieve the above object, the utility model provides a kind of deposit cavity, comprise pedestal, the seat ring that links to each other with described pedestal, it is characterized in that, described pedestal is provided with at least one recess, described seat ring is provided with a slice contactor segment at least, and when described seat ring linked to each other with described pedestal, described contactor segment was stuck in the described recess.
Above-mentioned deposit cavity, wherein, described pedestal comprises central area and marginarium, and described marginarium is looped around outside the described central area, and is step-like with described central area and is connected, and described recess is arranged on the edge of described marginarium.
Above-mentioned deposit cavity, wherein, the quantity of described recess is 3~6, a plurality of described recesses are along same circumference uniform distribution.
Above-mentioned deposit cavity, wherein, described recess is the arched door shape.
Above-mentioned deposit cavity, wherein, ring and outer shroud in described seat ring comprises, described outer shroud be looped around described in outside the ring, and with described in ring be step-like and be connected, described contactor segment is arranged on the inner side-wall of described outer shroud.
Above-mentioned deposit cavity, wherein, the quantity of described contactor segment is 3~6, the described contactor segment of multi-disc is along same circumference uniform distribution.
Above-mentioned deposit cavity, wherein, described contactor segment is the arched door shape.
Deposit cavity of the present utility model is established recess on described pedestal, on described seat ring, establish contactor segment, when described seat ring links to each other with described pedestal, described contactor segment is stuck in the described recess, this way of contact between described seat ring and the described pedestal can not exert an influence to the thickness of described seat ring, the forceful electric power that is applied on the described pedestal is pressed the described seat ring of very difficult puncture, thereby can prevent that wafer and described pedestal from electrically contacting.
Description of drawings
Deposit cavity of the present utility model is provided by following embodiment and accompanying drawing.
Fig. 1 is the sectional view of the deposit cavity of prior art.
Fig. 2 is the sectional view of pedestal in the prior art.
Fig. 3 is the sectional view of seat ring in the prior art.
Fig. 4 is the sectional view of the deposit cavity of the utility model embodiment.
Fig. 5 is the vertical view of pedestal of the deposit cavity of the utility model embodiment.
Fig. 6 is the A-A sectional view among Fig. 5.
Fig. 7 is the vertical view of seat ring of the deposit cavity of the utility model embodiment.
Fig. 8 is the B-B sectional view among Fig. 7;
Embodiment
Below with reference to Fig. 4~Fig. 8 deposit cavity of the present utility model is described in further detail.
Figure 4 shows that the sectional view of the deposit cavity of the utility model embodiment;
As shown in Figure 4, this deposit cavity comprises well heater (not showing among Fig. 4), pedestal 210 and seat ring 220, and described pedestal 210 is arranged on the described well heater, and described seat ring 220 links to each other with described pedestal 210;
Described pedestal 210 is provided with recess 215, and described seat ring 220 is provided with contactor segment 224, and when described seat ring 220 linked to each other with described pedestal 210, described contactor segment 224 was stuck in the described recess 215, slides in order to prevent the described relatively pedestal 210 of described seat ring 220.
Deposit cavity of the present utility model is provided with at least one recess 215 on described pedestal 210, on described seat ring 220, be provided with a slice contactor segment 224 at least, when described seat ring 220 links to each other with described pedestal 210, described contactor segment 224 is stuck in the described recess 215, this way of contact between described seat ring 220 and the described pedestal 210 can not exert an influence to the thickness of described seat ring 220, the forceful electric power that is applied on the described pedestal 210 is pressed the described seat ring 220 of very difficult puncture, thereby can prevent that wafer and described pedestal 210 from electrically contacting.
Figure 5 shows that the vertical view of pedestal of the deposit cavity of the utility model embodiment, Figure 6 shows that the A-A sectional view among Fig. 5;
Referring to Fig. 5 and Fig. 6, described pedestal 210 comprises central area 211 and marginarium 212, and described marginarium 212 is looped around outside the described central area 211, and is step-like with described central area 211 and is connected, and the described relatively marginarium 212 of described central area 211 raises up;
Described central area 211 is provided with first open holes 213, and described pedestal 210 is connected with described well heater by described first open holes 213;
In one preferred embodiment, described central area 211 is provided with 213,4 described first open holess 213 of 4 described first open holess along same circumference uniform distribution;
Described central area 211 is provided with second open holes 214 with the intersection of described marginarium 212, and described second open holes 214 is used for connecting isolates ceramic (not shown), and described isolation pottery is used to isolate described well heater and described pedestal;
In one preferred embodiment, described central area 211 is provided with 3 described second open holess 214 with the intersection of described marginarium 212,3 described second open holess 214 are evenly distributed on the intersection of described central area 211 and described marginarium 212, and described second open holes 214 is preferably circular port;
Described recess 215 is arranged on the edge of described marginarium 212;
In one preferred embodiment, the edge of described marginarium 212 is provided with 215,3~6 described recesses 215 of 3~6 described recesses along same circumference uniform distribution, and described recess 215 is the arched door shape;
In one preferred embodiment, described pedestal adopts stainless material to make, and described pedestal remaining surface except that its bottom face all scribbles aluminium lamination;
Figure 7 shows that the vertical view of seat ring of the deposit cavity of the utility model embodiment, Figure 8 shows that the B-B sectional view among Fig. 7;
Referring to Fig. 7 and Fig. 8, ring 221 and outer shroud 222 in described seat ring 220 comprises, described outer shroud 222 be looped around described in outside the ring 221, and with described in ring 221 be step-like and be connected, described in ring 221 described relatively outer shrouds 222 raise up;
The inside edge of ring 221 is provided with breach 223 in described, and the outline of the shape of described breach 223 and described second open holes 214 is complementary;
In one preferred embodiment, the inside edge of described interior ring 221 is provided with 223,3 described breach 223 of 3 described breach along same circumference uniform distribution, and described breach 223 is the semicircular arc breach;
Described contactor segment 224 is arranged on the inner side-wall of described outer shroud 222, described contactor segment 224 is complementary with described recess 215, when described seat ring 220 linked to each other with described pedestal 210, described contactor segment 224 was stuck in the described recess 215, slided in order to prevent the described relatively pedestal 210 of described seat ring 220;
In one preferred embodiment, the inner side-wall of described outer shroud 222 is provided with 224,3~6 described contactor segments 224 of 3~6 described contactor segments along same circumference uniform distribution, and described contactor segment 224 is the arched door shape;
Described seat ring 220 adopts insulating material to make, and in the preferred embodiment, described seat ring 220 adopts stupalith to make.
During deposit film, applying forceful electric power on the described pedestal 210 presses, the wafer (not shown) is supported on the described interior ring 221, because described contactor segment 224 is positioned at the below of described ring 221, interval between the upper surface of described contactor segment 224 and described interior ring 221 is more than or equal to the thickness D of ring 221 in described, therefore, the forceful electric power that described interior ring 221 is difficult to be applied on the described pedestal 210 are pressed puncture, can prevent that described wafer and described pedestal 210 from electrically contacting.