CN105132890A - Novel ceramic ring used in cavity - Google Patents
Novel ceramic ring used in cavity Download PDFInfo
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- CN105132890A CN105132890A CN201510523955.XA CN201510523955A CN105132890A CN 105132890 A CN105132890 A CN 105132890A CN 201510523955 A CN201510523955 A CN 201510523955A CN 105132890 A CN105132890 A CN 105132890A
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- ceramic ring
- edge corner
- inner edge
- novel
- angle
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Abstract
The invention provides a novel ceramic ring used in a cavity and belongs to the technical field of application of semiconductor thin film deposition. The sharp corners of the edges of the ceramic ring are machined into circular beads. The novel ceramic ring solves the technical problem of charge accumulation through circular arc transition. The novel ceramic ring is particularly and structurally characterized in that the novel ceramic ring comprises a wafer, a heating disc and a ceramic ring body; the circular beads are machined at the edges of the ceramic ring and comprise the upper ceramic ring outer edge corner, the lower ceramic ring outer edge corner, the upper ceramic ring inner edge corner and the lower ceramic ring inner edge corner. The diameter of the circular beads of the upper ceramic ring outer edge corner, the lower ceramic ring outer edge corner, the upper ceramic ring inner edge corner and the lower ceramic inner edge corner ranges from 0.5 mm to 2 mm. The novel ceramic ring is simple in structure, easy to machine, safe, reliable and capable of preventing the point discharge phenomena. The novel ceramic ring is mainly applied in the semiconductor film coating device reaction cavity in the normal temperature or high temperature technology process.
Description
Technical field
The present invention relates to a kind of wafer carrying mechanism of semiconductor coated film equipment, this load carrier is ceramic ring in a kind of novel cavity, to be mainly used in semiconductor coated film device reaction cavity in normal temperature or elevated temperature processes, to belong to the applied technical field of semiconductor film deposition.
Background technology
The edge of the wafer carrying ceramic ring of existing semiconductor coated film equipment is wedge angle, and in elevated temperature processes, pointed edge easily causes electric charge accumulation, easily cause point discharge, form arcing events, negative impact is caused to process results, and hardware in chamber may be damaged.
Summary of the invention
The present invention, for the purpose of solving the problem, devises ceramic ring in a kind of novel cavity, solves the problem of the point discharge in technological process preferably.
For achieving the above object, the present invention adopts following technical proposals: ceramic ring in a kind of novel cavity, is ceramic ring edge wedge angle is processed into fillet, utilizes arc transition to prevent electric charge accumulation.Its concrete structure: it comprises: wafer (1), heat dish (2) and ceramic ring (3).The edge of described ceramic ring (3) is processed with fillet, and fillet comprises angle (10) and ceramic ring inner edge inferior horn (7) on angle (4) in ceramic ring outer rim, ceramic ring outer rim inferior horn (5), ceramic ring inner edge.
In described ceramic ring outer rim on angle (4), ceramic ring outer rim inferior horn (5), ceramic ring inner edge the radius of angle (10) and ceramic ring inner edge inferior horn (7) its fillet at 0.5mm-2mm.
Beneficial effect of the present invention and feature are:
1, structure is simple, easily processes;
2, safe and reliable, effectively can prevent point discharge phenomenon;
3, promotion and application in the technical field of semiconductor film deposition are easy to.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the close-up schematic view of ceramic ring.
In figure, piece mark represents respectively:
1, wafer; 2, heat dish; 3, ceramic ring; 4, angle in ceramic ring outer rim; 5, ceramic ring outer rim inferior horn; 6, angle in heat dish outer rim; 7, ceramic ring inner edge inferior horn; 8, heat dish boss inferior horn; 9, angle on heat dish boss; 10, angle on ceramic ring inner edge; 11, wafer outer rim; 12, ceramic ring wafer stopper slot corner.
Embodiment
Embodiment
With reference to Fig. 1, ceramic ring in a kind of novel cavity, is that ceramic ring edge wedge angle is processed into fillet, utilizes arc transition to prevent electric charge accumulation.Its concrete structure: it comprises: wafer 1, heat dish 2 and ceramic ring 3.The edge of described ceramic ring 3 is processed with fillet, and fillet comprises angle 10 and ceramic ring inner edge inferior horn 7 on angle 4 in ceramic ring outer rim, ceramic ring outer rim inferior horn 5, ceramic ring inner edge.
In described ceramic ring outer rim on angle 4, ceramic ring outer rim inferior horn 5, ceramic ring inner edge the radius of angle 10 and ceramic ring inner edge its fillet of inferior horn 7 at 0.5mm-2mm.
Described ceramic ring 3 is placed on heat dish 2, and wafer 1 is placed in the circular stopper slot of ceramic ring 2.During technique, process gas sprays above wafer 1, and form plasma body, reactant is deposited on the surface of wafer 1, and other by products and charged particle move to surrounding gradually, are finally excluded cavity.In this process, charged particle can be adsorbed on the surface of ceramic ring 3, and produce accumulation, because on angle 4, ceramic ring outer rim inferior horn 5, ceramic ring inner edge in the ceramic ring outer rim of ceramic ring 3, angle 10, ceramic ring inner edge inferior horn 7, ceramic ring wafer stopper slot corner 12 are fillet structures, arc transition is passed through in face and face.In technological process, charged particle can not form excess accumulation at edge, to avoid in ceramic ring outer rim that angle 4 and heat coils in outer rim between angle 6, ceramic ring outer rim inferior horn 5 and heat coil in outer rim between angle 6, ceramic ring inner edge inferior horn 7 and hotly to coil between boss inferior horn 8, hotly to coil on boss on angle 9 and ceramic ring inner edge between angle 10, produce electric discharge phenomena between wafer outer rim 11 and ceramic ring wafer stopper slot corner 12, thus ensure that the stability of technique.
Claims (3)
1. a ceramic ring in novel cavity, is characterized in that: this ceramic ring is that ceramic ring edge wedge angle is processed into fillet, utilizes arc transition to prevent electric charge accumulation.
2. ceramic ring in novel cavity as claimed in claim 1, it is characterized in that: it comprises wafer (1), heat dish (2) and ceramic ring (3), the edge of described ceramic ring (3) is processed with fillet, and fillet comprises angle (10) and ceramic ring inner edge inferior horn (7) on angle (4) in ceramic ring outer rim, ceramic ring outer rim inferior horn (5), ceramic ring inner edge.
3. ceramic ring in novel cavity as claimed in claim 2, is characterized in that: in described ceramic ring outer rim on angle (4), ceramic ring outer rim inferior horn (5), ceramic ring inner edge the radius of angle (10) and ceramic ring inner edge inferior horn (7) its fillet at 0.5mm-2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510523955.XA CN105132890A (en) | 2015-08-24 | 2015-08-24 | Novel ceramic ring used in cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510523955.XA CN105132890A (en) | 2015-08-24 | 2015-08-24 | Novel ceramic ring used in cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105132890A true CN105132890A (en) | 2015-12-09 |
Family
ID=54718452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510523955.XA Pending CN105132890A (en) | 2015-08-24 | 2015-08-24 | Novel ceramic ring used in cavity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105132890A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298625A (en) * | 2016-08-22 | 2017-01-04 | 沈阳拓荆科技有限公司 | A kind of hierarchic structure ceramic ring |
| CN106337168A (en) * | 2016-11-08 | 2017-01-18 | 深圳天珑无线科技有限公司 | Vacuum plating jig |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008243990A (en) * | 2007-03-26 | 2008-10-09 | Ngk Insulators Ltd | Substrate heating device |
| CN202054890U (en) * | 2011-04-28 | 2011-11-30 | 中芯国际集成电路制造(上海)有限公司 | Deposition cavity |
| CN202786423U (en) * | 2012-09-03 | 2013-03-13 | 沈阳拓荆科技有限公司 | Novel aluminum wafer heating plate |
| CN203999905U (en) * | 2014-06-20 | 2014-12-10 | 中晟光电设备（上海）有限公司 | Semiconductor processing equipment and pallet thereof |
-
2015
- 2015-08-24 CN CN201510523955.XA patent/CN105132890A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008243990A (en) * | 2007-03-26 | 2008-10-09 | Ngk Insulators Ltd | Substrate heating device |
| CN202054890U (en) * | 2011-04-28 | 2011-11-30 | 中芯国际集成电路制造(上海)有限公司 | Deposition cavity |
| CN202786423U (en) * | 2012-09-03 | 2013-03-13 | 沈阳拓荆科技有限公司 | Novel aluminum wafer heating plate |
| CN203999905U (en) * | 2014-06-20 | 2014-12-10 | 中晟光电设备（上海）有限公司 | Semiconductor processing equipment and pallet thereof |
Non-Patent Citations (1)
| Title |
|---|
| 刘远星: "《电工基础》", 31 August 2007, 中央民族大学出版社 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298625A (en) * | 2016-08-22 | 2017-01-04 | 沈阳拓荆科技有限公司 | A kind of hierarchic structure ceramic ring |
| CN106298625B (en) * | 2016-08-22 | 2019-06-28 | 沈阳拓荆科技有限公司 | A kind of hierarchic structure ceramic ring |
| CN106337168A (en) * | 2016-11-08 | 2017-01-18 | 深圳天珑无线科技有限公司 | Vacuum plating jig |
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| C06 | Publication | ||
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| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151209 |