CN201653950U - Device for measuring working junction temperature and thermal resistance of electronic component - Google Patents
Device for measuring working junction temperature and thermal resistance of electronic component Download PDFInfo
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- CN201653950U CN201653950U CN 201020125895 CN201020125895U CN201653950U CN 201653950 U CN201653950 U CN 201653950U CN 201020125895 CN201020125895 CN 201020125895 CN 201020125895 U CN201020125895 U CN 201020125895U CN 201653950 U CN201653950 U CN 201653950U
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Abstract
The utility model relates to a device for measuring the working junction temperature and the thermal resistance of an electronic component, belonging to the field of the production and the measurement of electronic components. A component to be measured is placed in a vacuum system which is pre-provided with a wiring terminal for a connection with an external device; the external device comprises an A/D collecting board, a computer, a power supply and a heating power supply; the component to be measured is connected with the power supply via the wiring terminal in the vacuum system; a temperature-sensitive resistor A is placed close to the heat source part of the component to be measured, that is, the active area, and is connected with the A/D collecting board via the wiring terminal; another temperature-sensitive resistor B is connected with the A/D collecting board via the wiring terminal and is contacted with one side of a heating sheet, the other side of the heating sheet is contacted with the bottom of the component to be measured, that is, a heat-dissipating terminal; the heating sheet is connected with the heating power supply via the wiring terminal; and the computer is connected with the power supply, the A/D collecting board and the heating power supply. The utility model has no requirement on the encapsulation form of semiconductors and functional modules and belongs to non-destructive test.
Description
Technical field
The utility model relates to the production of electron device to be measured, and research, development field.
Background technology
The active area heat is concentrated when electronic devices and components or functional module work, and temperature rise is the key factor that influences its characteristic, reliability and life-span.Because the active area zone is little, measure relatively difficulty of its working temperature.Method commonly used has, the infrared measurement of temperature method, and the electrical parameter method, liquid crystal display and luminescent spectrum move method etc.Infrared measurement of temperature method and liquid crystal displays can the measured chip surface temperature distribution, may bring destruction to the encapsulation of device.Luminescent spectrum moves the method thermometric, and measured device itself must possess the characteristics of luminescence, is not suitable for non-luminous microelectronic component.The electrical parameter method can make things convenient for the temperature rise of rapid measuring element active area, but for most of device, the temperature sensitive parameter of extractible thermometric is very limited, and individual devices also will be equipped with expensive dedicated test circuit and equipment.
This method is utilized under the vacuum insulation environment, during by collection electronic devices and components or functional module operate as normal, the temperature rising curve of two-end-point (forward) on the heat dissipation path, and after the heating of device radiating end constant power, gather the temperature rise curve (oppositely) of measuring two-end-point once more, acquisition device is forward and reverse respectively applies under the constant power heating condition, and device reaches equilibrium temperature and distributes required heat time heating time, and promptly acquisition device steady operation thermograde is set up process heating heat respectively.Measure temperature under the electronic devices and components normal running conditions thus.
Present technique can be widely used in the electronic devices and components and the functional module of any packing forms, and measuring method is simple, accurately, is applicable to that the production of electron device is measured, and research, development field.
The utility model content
Fundamental purpose of the present utility model is: the temperature rise of active area is the important parameter of its life-span of decision and reliability during the electronic devices and components operate as normal.Utilize under the vacuum environment, the accurate measurement steady state temperature gradient is set up process institute heat requirement, and a kind of method of measuring semiconductor devices work temperature rise is provided.
The technical solution of the utility model is described below:
Measured device places a vacuum system, and this vacuum system leaves binding post and links to each other with external device (ED); External device (ED) comprises A/D collection plate, computing machine, power supply and heating power supply; Measured device is connected with power supply by binding post in the vacuum system; At the thermal source near measured device partly is that a thermo-sensitive resistor A is placed at the active area place, and thermo-sensitive resistor A is connected with the A/D collection plate by binding post; Another thermo-sensitive resistor B is connected with the A/D collection plate by binding post, and thermo-sensitive resistor B is simultaneously contacted with heating sheet, heating sheet another side and the bottom of the measured device end points that promptly dispels the heat contacts; Heating sheet is connected with heating power supply by binding post; Computing machine connects power supply, A/D collection plate, heating power supply.
The utility model principle of work
Electronic devices and components are made up of tube core, heat sink, scolder and shell usually.Under the atmospheric environment, heat is produced by device active region, flow through heat sink, shell to around environment leave.When the heat of active area generation equated with the heat of dissipation, after after a while, Temperature Distribution reached a kind of steady state (SS) on the device, formed by thermal source to shell Temperature Distribution from high to low.After device power source was connected, active area temperature rising transient process synoptic diagram was seen Fig. 1. Curve 1 and 2 is respectively the electronic devices and components operate as normal among the figure, and thermal source is positioned at the temperature transient state upcurve of device heat radiation bottom.Because thermal resistance is certain between the semiconductor devices two-end-point, the temperature rise that reaches stable state is certain, but the asynchronism(-nization) that needs.
After electronic devices and components being put into a vacuum system since around dispel the heat the road through interrupting, the heat that active area produces can only be by heat exchange pattern to the shell transmission.At this moment, the active area temperature constantly raises, and thermograde strengthens.When heat be transmitted to the encapsulation shell end, heat no longer includes the road warp of dissipation, the temperature difference of keeping active area and shell end is constant, bulk temperature promotes (when device temperature is not too high, can ignore heat loss through radiation) rapidly.If place at two diverse locations of device (one of them is terminal for heat radiation)
Thermometric temperature sensing element, 2 temperature rise processes are seen the curve 1 and 2 in the synoptic diagram 2.
When these 2 temperature differences begin the constant moment, be thermal source and finish constantly to the foundation of case temperature gradient.Curve 3 among Fig. 2 promptly is the measurement curve of 2 temperature differences.Components and parts operate as normal, its active area are thermal source, set up process from active area to the case temperature gradient, are called forward heating process.Difference curve begins constant time t1, is the stable state temperature rise and sets up the required time.Operating power P multiply by t1, is to set up the heat requirement Q1=P*t1 of this thermograde institute.
When applying the same electrical power P in the encapsulation tube shell bottom by heating sheet, the bottom is a fire end at this moment, and is terminal for heat radiation above, two check point temperature uphill process after the measurement energized.When 2 temperature difference reach constant moment t2, be from encapsulating tube shell bottom to finish to the thermograde foundation of active area.We claim that this process is reverse heating process.Because device two ends thermal resistance reciprocity, the temperature difference of twice temperature rise process equates.In general, the thermal capacitance of component pipe core active area end is little, and the thermal capacitance of shell end is big.Therefore, reach the required heating power difference of the same temperature difference, i.e. t2＞t1, Q2=P*t2, for the second time thermograde set up institute's heat requirement.
In forward heating process and the reverse heating process, the temperature space from high temperature to low temperature distributes and presents complementary state.Be after temperature reaches steady-state distribution, thermal source temperature space distribution curve on the heat dissipation path of substrate occurs complementary.See synoptic diagram 3.Say that physically the cartographic represenation of area that curve and position coordinates constitute is set up steady-state distribution institute heat requirement.Forward heating and oppositely to heat institute's heat requirement different, but both sums are and make components and parts integral body evenly reach active area temperature time institute heat requirement.
The formed thermograde of forward and reverse heating process is identical, and promptly thermal resistance is identical.Forward and reverse thermograde is set up the heat requirement addition of process institute, and promptly P* (t1+t2) is injected in the device, under the vacuum environment, does not have the loss of heat, and total system reaches the temperature behind the uniform balance, the temperature when being exactly the device operate as normal.
The concrete job step of the utility model
(1) measured device 2 is placed a vacuum system 1, this vacuum system leaves binding post and links to each other with external device (ED); External device (ED) comprises A/D collection plate 6, computing machine 7, power supply 8 and heating power supply 9;
(2) measured device 2 is connected with power supply 8 by binding post in the vacuum system;
(3) partly be that a thermo-sensitive resistor A3 is placed at the active area place at the thermal source near measured device 2, thermo-sensitive resistor A3 is connected with A/D collection plate 6 by binding post;
(4) select a thermal resistance known, the heating sheet 4 that heating power is controlled, heating sheet 4 is connected with heating power supply 9 by binding post;
(5) another thermo-sensitive resistor B5 is connected with A/D collection plate 6 by binding post, and thermo-sensitive resistor B5 and heating sheet 4 one sides are contacted, heating sheet 4 another sides and the bottom of measured device 2 end points that promptly dispels the heat contacts;
(6) computing machine 7 control power supplys 8, A/D collection plate 6, heating power supply 9; A/D collection plate 6 is gathered thermo-sensitive resistor position temperature over time, and measurement data is preserved, apply electric power at every turn before, obtain temperature on the measured device by thermo-sensitive resistor;
(7) when energized 8, trigger measurement of A/D collection plate and record thermo-sensitive resistor A3 and thermo-sensitive resistor B5 change procedure in time simultaneously, difference by two thermo-sensitive resistor measured values becomes when constant, obtains and establishes the thermograde required time t1 of source region to the heat radiation end points;
(8) pass through methods such as vacuum system inflations, the measured device temperature is no longer changed, again by heating power supply 9 heating heating sheets 4, trigger A/D collection plate 6 simultaneously, measure and write down thermo-sensitive resistor A3 and thermo-sensitive resistor B5 change procedure in time, by the constant time t2 of difference that asks two thermo-sensitive resistor measured values, be and set up the thermograde required time of heat radiation end points to active area;
(9) pass through methods such as vacuum system inflations, the measured device temperature is no longer changed, connect the measured device power supply, applying power is P, and be t1+t2 turn-on time, power cutoff, when thermo-sensitive resistor A3 and thermo-sensitive resistor B5 are tending towards a steady state value, temperature when this temperature is the measured device operate as normal deducts and adds measured device temperature before the power, promptly gets the work temperature rise that is measured device; Because the thermal resistance and the heating power of heating sheet are known, deduct the heating sheet thermal resistance, promptly get the thermal resistance of actual measured device.
Set up under the too short situation of equilibrium temperature gradient time at measured device, can reduce add the dutycycle of power, reduce heat that measured device is heated up, t1, t2 time are extended, reduce measuring error;
The utility model does not require the packing forms of semiconductor devices or functional module, and belongs to nondestructive testing.Device or the functional module that can't measure for some routine measurement junction temperature technology particularly, this method more can demonstrate its applicability and advance.
Description of drawings
Fig. 1. the transient process synoptic diagram that the electronic devices and components temperature rises under the atmospheric environment
Fig. 2. the transient process synoptic diagram that temperature rises under the vacuum environment
Fig. 3. in forward and reverse heating process, the complementary temperature distribution state that device forms
1: the internal temperature rise distribution (environment temperature is 300K) that forms during the heating of device forward
2: the internal temperature rise distribution (environment temperature is 300K) that forms when device oppositely heats
3: two curves and
Fig. 4 test structure synoptic diagram
1: vacuum system 2: measured device 3: thermo-sensitive resistor A 4: heating sheet 5: thermo-sensitive resistor B; 6:A/D collection plate 7: computing machine 8: power supply 9: heating power supply
Fig. 5 embodiment forward is measured heat time heating time
Fig. 6 embodiment measures reverse heat time heating time
Embodiment
Measured device 2 places a vacuum system 1, and this vacuum system leaves binding post and links to each other with external device (ED); External device (ED) comprises A/D collection plate 6, computing machine 7, power supply 8 and heating power supply 9; Measured device 2 is connected with power supply 8 by binding post in the vacuum system; At the thermal source near measured device 2 partly is that a thermo-sensitive resistor A3 is placed at the active area place, and thermo-sensitive resistor A3 is connected with A/D collection plate 6 by binding post; Another thermo-sensitive resistor B5 is connected with A/D collection plate 6 by binding post, and thermo-sensitive resistor B5 and heating sheet 4 one sides are contacted, heating sheet 4 another sides and the bottom of measured device 2 end points that promptly dispels the heat contacts; Heating sheet 4 is connected with heating power supply 9 by binding post; Computing machine 7 connects power supply 8, A/D collection plate 6, heating power supply 9.
1, use a vacuum system 1, this system links to each other with external measurement device by the inner sealing binding post.Measured device is POWER VD MOS, normal working voltage V=3.5V, and I=1.2A, operating power P=V*I=4.2W, working power is subjected to computer control;
2, select two thermo-sensitive resistors, adopt two 100 ohm of platinum resistance in the present embodiment, a top that is placed on shell, another is placed on the bottom of heating film, the other end of film contacts with the bottom of shell, two platinum resistance are joined by the 1mA current source of internal interface terminal with the outside, the resistance both end voltage inserts high speed acquisition board respectively, the heating power of heating film links to each other with external power source, heating power applies simultaneously, trigger high speed acquisition board, gather the voltage at thermo-sensitive resistor two ends, just temperature is with the variation of heat time heating time;
3, the time dependent collection of thermo-sensitive resistor voltage (temperature) is to adopt high speed acquisition board.Be the precision that guarantees to measure, adopt 1M sampling rate, 12, double channel A C1050 collection plate in the present embodiment.Shortest time can reach 1 microsecond at interval, and in the present embodiment, the time interval of collection is 2ms, and the data of measurement are deposited at any time;
4, the test vacuum system is vacuumized, make vacuum tightness reach 1.6 * 10
-3Pascal, during measurement, computing machine sends instructions to programmable power supply, and VDMOS adds power to measured device, triggers high speed acquisition board simultaneously and measures thermo-sensitive resistor change curve, i.e. temperature rise curve in time.Measurement result is seen Fig. 5;
5, the curve of measuring is done poor, it is t1=4 second that its difference reaches the constant moment.When being the forward heating, steady state temperature gradient t1 Time Created, heating heat Q=P*t1=16.8 joule.
6, use a pottery to have the heating sheet heating of heating resistor, trigger high speed acquisition board simultaneously and measure and write down thermo- sensitive resistor 3 and 5 change procedure in time, the temperature rise curve when promptly oppositely heating, measurement result is seen Fig. 6;
7, the curve of measuring is done poor, it is t2=7s that its difference reaches the constant moment, when promptly oppositely heating, and steady state temperature gradient t2 Time Created, heating heat Q=P*t2=29.4 joule.
8, measured device is added power, the power duration is t1+t2, after removing power, trigger the A/D collection plate and measure and write down thermo-sensitive resistor 3 terminal voltages change procedure in time, when voltage no longer changes, corresponding temperature is exactly device working junction temperature during operate as normal under atmosphere, in this example, the device working junction temperature is upgraded to 9.2K, and heating film thermal resistance is 0.5K/W in this example, therefore deduct the 2.1K temperature rise that the heating film is introduced, the device thermal resistance is (9.2K-2.1K)/4.2W=1.7K/W.
Claims (1)
1. device of measuring electronic devices and components working junction temperature and thermal resistance, it is characterized in that: measured device places a vacuum system, and this vacuum system leaves binding post and links to each other with external device (ED); External device (ED) comprises A/D collection plate, computing machine, power supply and heating power supply; Measured device is connected with power supply by binding post in the vacuum system; At the thermal source near measured device partly is that a thermo-sensitive resistor A is placed at the active area place, and thermo-sensitive resistor A is connected with the A/D collection plate by binding post; Another thermo-sensitive resistor B is connected with the A/D collection plate by binding post, and thermo-sensitive resistor B is simultaneously contacted with heating sheet, heating sheet another side and the bottom of the measured device end points that promptly dispels the heat contacts; Heating sheet is connected with heating power supply by binding post; Computing machine connects power supply, A/D collection plate, heating power supply.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201020125895 CN201653950U (en) | 2010-03-05 | 2010-03-05 | Device for measuring working junction temperature and thermal resistance of electronic component |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201020125895 CN201653950U (en) | 2010-03-05 | 2010-03-05 | Device for measuring working junction temperature and thermal resistance of electronic component |
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Cited By (9)
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| CN103175861A (en) * | 2013-02-20 | 2013-06-26 | 中国科学院电工研究所 | Junction-to-case thermal resistance testing method |
| CN103616628A (en) * | 2013-11-21 | 2014-03-05 | 北京工业大学 | Method and device for measuring temperature rising and heat resistance of Schottky grid field effect transistor |
| CN103822731A (en) * | 2014-03-06 | 2014-05-28 | 北京工业大学 | Method for testing junction temperature of VDMOS (Vertical Double Diffusion Metal Oxide Semiconductor) device |
| CN104458799A (en) * | 2014-11-27 | 2015-03-25 | 天津大学 | Method and device for measuring transient thermal resistance of IGBT module |
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| CN103175861A (en) * | 2013-02-20 | 2013-06-26 | 中国科学院电工研究所 | Junction-to-case thermal resistance testing method |
| CN103616628A (en) * | 2013-11-21 | 2014-03-05 | 北京工业大学 | Method and device for measuring temperature rising and heat resistance of Schottky grid field effect transistor |
| CN103616628B (en) * | 2013-11-21 | 2017-03-01 | 北京工业大学 | Schottky gate field-effect transistor temperature rise and thermal resistance measurement method and device |
| CN103822731B (en) * | 2014-03-06 | 2016-08-24 | 北京工业大学 | A kind of method of testing of VDMOS device junction temperature |
| CN103822731A (en) * | 2014-03-06 | 2014-05-28 | 北京工业大学 | Method for testing junction temperature of VDMOS (Vertical Double Diffusion Metal Oxide Semiconductor) device |
| CN104458799A (en) * | 2014-11-27 | 2015-03-25 | 天津大学 | Method and device for measuring transient thermal resistance of IGBT module |
| CN104808130A (en) * | 2015-04-16 | 2015-07-29 | 北京工业大学 | Junction temperature measuring device for BE junction of multi-path transistor |
| CN104808130B (en) * | 2015-04-16 | 2017-08-25 | 北京工业大学 | Multichannel transistor BE ties junction temperature measurement device |
| CN108287300A (en) * | 2018-01-16 | 2018-07-17 | 北京工业大学 | A kind of method and apparatus measuring operating insulation grid-type field-effect transistor junction temperature |
| CN108287300B (en) * | 2018-01-16 | 2020-07-03 | 北京工业大学 | Method and device for measuring junction temperature of insulated gate field effect transistor in working state |
| RU2687300C1 (en) * | 2018-09-05 | 2019-05-13 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский политехнический университет" | Apparatus for measuring thermal resistance between a semiconductor device housing and a cooling radiator |
| CN111855736A (en) * | 2020-03-18 | 2020-10-30 | 同济大学 | Electricity card performance test system |
| CN111855736B (en) * | 2020-03-18 | 2022-02-18 | 同济大学 | Electricity card performance test system |
| CN115597744A (en) * | 2022-12-14 | 2023-01-13 | 蜂巢传动科技邳州有限公司（Cn） | Temperature measuring method, chip temperature detecting method, device, equipment and vehicle |
| CN115597744B (en) * | 2022-12-14 | 2023-03-14 | 蜂巢传动科技邳州有限公司 | Temperature measuring method, chip temperature detecting method, device, equipment and vehicle |
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Granted publication date: 20101124 Termination date: 20120305 |