CN108823638A - The preparation method of large scale silicon ingot used for solar batteries - Google Patents
The preparation method of large scale silicon ingot used for solar batteries Download PDFInfo
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- CN108823638A CN108823638A CN201811050560.2A CN201811050560A CN108823638A CN 108823638 A CN108823638 A CN 108823638A CN 201811050560 A CN201811050560 A CN 201811050560A CN 108823638 A CN108823638 A CN 108823638A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
Abstract
The invention discloses a kind of preparation methods of large scale silicon ingot used for solar batteries, are related to polysilicon or monocrystalline silicon cast ingot method and technology field.Silicon single crystal bar is arranged in the composite crucible of molybdenum crucible and ceramic ring by the method using molybdenum silicon single crystal bar clamping device by identical crystal orientation array, and cosolvent is then added into molybdenum crucible（High-purity copper powder or tiny copper billet）, make melt generate temperature gradient solidification by multi-temperature zone and plasma melting.On the one hand plasma electrode improves the interface stability of the solidification of silicon melt, on the one hand reduce constitutional supercooling degree by the volatilization of copper.Finally make monocrystalline block array quickly be solidified as the quasi- monocrystalline of one piece of entirety, using the characteristic with high gradient solidification high-speed solidification, takes out silicon ingot finally by ceramic ring is destroyed, this method has the characteristics that crystalline rate is high.
Description
Technical field
The present invention relates to polysilicon or monocrystalline silicon cast ingot method and technology field, more particularly to one kind are used for solar batteries big
The preparation method of size silicon ingot.
Background technique
Silicon is important semiconductor material, is one of the basic material for preparing chip and integrated circuit.No with petroleum etc.
The application of solar energy is increasingly paid attention in the exhaustion of renewable energy, the whole world.Due to silicon materials in the earth's crust rich content, at present
Silicon materials are considered ideal solar energy transition material, and silica-based solar cell is considered solving the best way of energy problem
One of diameter.The development of photovoltaic industry, the demand to high quality polysilicon crystal silicon are increasing.The bigger preparation of the size of substrate is too
The cost of positive energy battery is lower, but the difficulty for preparing crystal increases.Polysilicon is because the reasons luminous efficiency such as crystal boundary wants low
In quasi-monocrystalline silicon.Therefore, the quasi- monocrystalline preparation of large scale low cost is very promising, is highly desirable exploitation large scale, uniformly
Property more preferable, the preparation method and equipment of more economic quasi-monocrystalline silicon.
Summary of the invention
The technical problem to be solved by the present invention is to how to provide a kind of preparation process it is simple, it is at low cost, prepare high silicon
The high method of ingot quality.
In order to solve the above technical problems, the technical solution adopted by the present invention is that：A kind of large scale silicon used for solar batteries
The preparation method of ingot, it is characterised in that include the following steps：
The assembling of large scale silicon ingot preparation facilities used for solar batteries；
10 are evacuated to the furnace body in the preparation facilities-5Pa is filled with inert gas to 0.5MPa, starts described device dress
Primary heater, secondary heater, third heater, the 4th heater and the 5th heater in setting, until passing through the furnace
Observation window at the top of body observes the high purity copper between the silicon single crystal bar in molybdenum crucible on several silicon single crystal bar molybdenum clamping devices
Until powder or tiny copper billet melt, so that then the first thermocouple temperature starts plasma electric between 1062 DEG C -1162 DEG C
Pole, while the power for adjusting primary heater, secondary heater, third heater, the 4th heater and the 5th heater is kept
Melt temperature is constant；Test temperature by controlling thermocouple controls the local melting degree of silicon single crystal bar；
After the temperature display of the second thermocouple and the first thermocouple is stablized, the 4th heater and the 5th heater are gradually reduced first
Output power, while to guarantee that the temperature of the second thermocouple is constant, the power of plasma electrode is gradually increased until the 4th heater
It is 0 with the 5th heater wattage output；
After the 4th heater and the 5th heater wattage output are 0, the power of third heater is gradually reduced, while to guarantee
The constant power for gradually increasing plasma electrode of the temperature of second thermocouple is until the output of third heater wattage output is 0；
In the 4th heater, during the power of the 5th heater and third heater is reduced, silicon single crystal bar is constantly roughened simultaneously
The quasi-monocrystalline silicon of an entirety is mutually connected to become in the form of low angle boundary；After the power of third heater is reduced to 0, silicon
Silicon between monocrystal rod, which has solidified, to be finished, and is mainly copper atom in melt, is then slowly stopped plasma electrode, primary heater
And the power of secondary heater.
After crystal ingot is cooled to room temperature, crystal ingot is taken out together with ceramic ring, then breaks ceramic ring into pieces, takes out crystal ingot,
The copper segregation area on crystal top is cut away, mono-like silicon ingot can be prepared.
A further technical solution lies in：The assemble method of the large scale silicon ingot preparation facilities used for solar batteries is such as
Under；
Plasma electrode and top muff are arranged into upper furnace body；
Silicon single crystal bar is placed on the silicon single crystal bar molybdenum clamping device, the arrangement uniform orientation of silicon single crystal bar, by silicon single crystal
Stick molybdenum clamping device is regularly arranged to be put into molybdenum crucible, and molybdenum crucible is installed in ceramic crucible set, is then put into ceramic ring
Ceramic crucible set is internal, and the upper side of its underpart and molybdenum crucible closely connects, and high-purity copper powder or tiny copper billet are arranged
Between silicon single crystal bar；
Arrange primary heater, secondary heater, what third heater, the 4th heater and the 5th heater were covered in ceramic crucible
Outside, and the primary heater is located in the upper end opening of ceramic crucible set, the secondary heater, third heater
It is arranged in the periphery of the ceramic crucible set from top to bottom with the 4th heater, the 5th heater is arranged in the ceramic earthenware
Lower furnace body side is arranged in the outside of secondary heater, third heater, the 4th heater and the 5th heater in the bottom of crucible set
Muff；Finally the first electromagnetic inductor and the second electromagnetic inductor, institute are arranged in the periphery of lower furnace body side muff
It states the first electromagnetic inductor and the second electromagnetic inductor is arranged from top to bottom, and the first electromagnetic inductor and the second electromagnetic inductor
Between be provided with gap.
A further technical solution lies in：When installing the molybdenum crucible, make the crucible pole of the molybdenum crucible bottom from upper
It is stretched out out of described furnace body after sequentially passing through the bottom of bottom, the 5th heater and lower furnace body that ceramic crucible covers under, so
The first thermocouple is arranged into the thermocouple mounting groove of the crucible pole afterwards.
A further technical solution lies in：By the second thermocouple sequentially pass through the side wall of lower furnace body, the first electromagnetic inductor with
Behind space and lower furnace body side muff between second electromagnetic inductor, the medial end of second thermocouple is made to be located at the
Between three heaters and lower furnace body side muff.
Generated beneficial effect is by adopting the above technical scheme：The method utilizes molybdenum silicon single crystal bar clamping device
Silicon single crystal bar is arranged in the composite crucible that molybdenum crucible and ceramic ring are constituted by identical crystal orientation array, is then added into molybdenum crucible
Add cosolvent（High-purity copper powder or tiny copper billet）, make melt generate temperature gradient by multi-temperature zone and plasma melting solidifying
Gu；On the one hand plasma electrode improves the interface stability of the solidification of silicon melt, on the one hand by the volatilization of copper reduce at
Divide degree of supercooling, monocrystalline block array is finally made quickly to be solidified as the quasi- monocrystalline of one piece of entirety, solidifies high speed using with high gradient
The characteristic of rate solidification, takes out silicon ingot finally by ceramic ring is destroyed, this method has the characteristics that crystalline rate is high.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is the structural schematic diagram of preparation facilities described in the embodiment of the present invention；
Fig. 2 is the installation diagram of silicon single crystal bar molybdenum clamping device and silicon single crystal bar in preparation facilities described in the embodiment of the present invention；
Wherein：1：Upper furnace body；2：Upper furnace body；3：Plasma electrode；4：Electrode protection ceramic tube；5：Muff at the top of upper furnace body；
6：Primary heater；7：Secondary heater；8：Third heater；9：4th heater；10：5th heater；11：Molybdenum crucible；
12：The clamping of silicon single crystal bar molybdenum；13：Silicon single crystal bar；14：Ceramic crucible set；15：Ceramic ring；16：Plasma arc；17：Silicon-copper is molten
Body；18：First electromagnetic inductor；19：Second electromagnetic inductor；20：Dust recovery chamber；21：Dust collection chamber；22：Lower furnace body
Side muff；23：First thermocouple；24：Air inlet pipe；25：Observation window；26：Second thermocouple.
Specific embodiment
With reference to the attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
As Figure 1-Figure 2, the embodiment of the invention discloses a kind of preparation facilities of large scale silicon ingot used for solar batteries,
Including furnace body, ceramic crucible set 14 is provided in the furnace body, the bottom of the ceramic crucible set 14 is provided with molybdenum crucible 11.Institute
The upside setting ceramic ring 15 of molybdenum crucible 11 is stated, the outer wall of the ceramic ring 15 is contacted with the inner wall of ceramic crucible set 14,
And the wall thickness of the ceramic ring 15 is identical as the wall thickness of molybdenum crucible 11.Silicon single crystal bar molybdenum clamping work is provided in the molybdenum crucible 11
Silicon single crystal bar 13, is arranged in molybdenum crucible 11 by tool 12 by silicon single crystal bar molybdenum clamping device 12 by array, silicon single crystal bar 13
Arrange uniform orientation；Primary heater 6, the periphery of ceramic crucible set 14 are provided at the upper end opening of the ceramic crucible set 14
It is provided with secondary heater 7, third heater 8 and the 4th heater 9, the bottom setting of the ceramic crucible set 14 from top to bottom
There is the 5th heater 10.
The outside of the secondary heater 7, third heater 8 and the 4th heater 9 is provided with lower furnace body side muff
22, the outside of lower furnace body side muff 22 is provided with the first electromagnetic inductor 18 and the second electromagnetic inductor 19.It is described
The upside of primary heater 6 is provided with muff 5 at the top of upper furnace body, and one end of plasma electrode 3 is located at outside the furnace body, wait from
The other end of sub-electrode 3 enters the pottery after sequentially passing through the furnace body, upper furnace body top muff 5 and primary heater 6
Ceramic ring 15 is simultaneously kept at a distance with the upper side of the silicon single crystal bar 13, and the periphery of the plasma electrode 3 is provided with electrode guarantor
Protect ceramic tube 4.The periphery of the electrode protection ceramic tube 4 is directly contacted with the furnace body, and the electrode protection ceramic tube 4
Periphery is not contacted with muff 5 at the top of the upper furnace body and primary heater 6.It is prevented by the electrode protection ceramic tube 4
It discharges between muff 5 and primary heater 6 at the top of the electrode and upper furnace body.
Further, as shown in Figure 1, the furnace body includes upper furnace body 1 and lower furnace body 2, the top setting of the upper furnace body 1
There is observation window 25, situation about be able to observe that in furnace by observation window.
Further, as shown in Figure 1, the lower part of the molybdenum crucible 11 is provided with crucible pole, the lower end of the crucible pole according to
It is secondary to be stretched out out of described furnace body behind the bottom of the bottom of ceramic crucible set 14, the 5th heater 10 and lower furnace body 2,
The first thermocouple 23 is disposed in the crucible pole, molybdenum crucible 11, ceramic ring 15 and ceramic crucible set 14 can turn with crucible pole
It is dynamic to rotate together.
Further, as shown in Figure 1, the bottom of lower furnace body is provided with air inlet pipe 24, be provided in the air inlet pipe 24 into
Air valve is provided with dust collection chamber 21, the powder in the space at the top of the furnace body between muff 5 and the top of upper furnace body 1
Dirt collecting chamber 21 is connected by exhaust pipe with the dust recovery chamber 20 outside the furnace body, is provided in the dust recovery chamber 20
Gas vent takes copper and silica soot out of furnace body for guaranteeing that gas is lasting.In 13 growth period of silicon single crystal bar, air inlet pipe 24 is not
Disconnected to be filled with inert gas, inert gas carries the copper generated by plasma arc 16 after each section of heater heats and silica soot passes through
The entrance dust recovery chamber 20 of dust collection chamber 21 is crossed, gas vent is housed in dust recovery chamber 20, is incited somebody to action for guaranteeing that gas is lasting
Copper and silica soot take furnace body out of.
Further, as shown in Figure 1, silicon single crystal bar molybdenum clamping device 12 is covered with 11 bottom of molybdenum crucible, silicon single crystal bar molybdenum folder
The gap held between tool 12 is less than 0.5mm, and selected all 13 uniform orientations of silicon single crystal bar, crystal orientation deviation is less than 0.5 °.This
Outside, the silicon single crystal bar 13 is arranged by the sequence end to end of original crystal ingot end to end, and the melt that all silicon single crystal bars 13 are grown
Contained in concentration of dopant it is identical.
Further, as shown in Figure 1, the second thermocouple 26 sequentially pass through the side wall of lower furnace body 2, the first electromagnetic inductor 18 with
Behind space and lower furnace body side muff 22 between second electromagnetic inductor 19, make the medial end of second thermocouple 26
Between third heater and lower furnace body side muff, the temperature by controlling the second thermocouple 26 controls silicon single crystal bar 13
Local melting degree controls crystal by temperature change between the second thermocouple 26 of control and first thermocouple 23 and temperature gradient
Growth course accelerates the volatilization of copper ion to inhibit constitutional supercooling, and realizes ultra high temperature gradient to press down by plasma electrode 3
The formation of defect processed.
Plasma electrode 3 that the preparation facilities is arranged by upper furnace body 1 and the primary heater 6 arranged with lower furnace body 2,
Secondary heater 7, third heater 8, the 4th heater 9 and the 5th heater 10 heating silicon single crystal bar 13 and high-purity copper powder or
Tiny copper billet, high-purity copper powder or the fusing of tiny copper billet, and will be dissolved at the top of part silicon single crystal bar 13, the two forms silicon-
Copper melts 17.Primary heater 6, the secondary heater 7, third that the plasma electrode 3 and lower furnace body 2 that upper furnace body 1 is arranged are arranged
Heater 8, the 4th heater 9 and the 5th heater 10 generate temperature gradient in silicon-copper melts 17 and silicon single crystal bar 13, by the
One electromagnetic inductor 18 and the second electromagnetic inductor 19 generate electromagnetic agitation to melt, promote 13 silicon atoms of silicon single crystal bar and copper
The transmission of atom and the transmission of energy.By controlling primary heater 6, secondary heater 7, third heater 8, the 4th heater
9 and the 5th the power of heater 10 promote silicon single crystal bar 13 diameter to grow up to control the variation of temperature gradient.Meanwhile plasma
Electrode 3 accelerates the volatilization of copper atom further to promote growing up for 13 diameter of monocrystal rod, these final silicon single crystal bars 13 are connected to one
It rises and forms a whole major diameter mono-like silicon ingot.
The embodiment of the invention also discloses a kind of preparation methods of large scale silicon ingot used for solar batteries, including walk as follows
Suddenly：
The assembling of large scale silicon ingot preparation facilities used for solar batteries；
10 are evacuated to the furnace body in the preparation facilities-5Pa is filled with inert gas to 0.5MPa, starts described device dress
Primary heater 6, secondary heater 7, third heater 8, the 4th heater 9 and the 5th heater 10 in setting, until passing through
Observation window 25 at the top of the furnace body observes the silicon single crystal bar in molybdenum crucible 11 on several silicon single crystal bar molybdenum clamping devices 12
Until high-purity copper powder between 13 or tiny copper billet melt, so that 23 temperature of the first thermocouple is between 1062 DEG C -1162 DEG C, so
Start plasma electrode 3 afterwards, while adjusting primary heater 6, secondary heater 7, third heater 8, the 4th heater 9 and the
The power of five heaters 10 keeps melt temperature constant, and the test temperature by controlling the second thermocouple 26 controls silicon single crystal bar 13
Local melting degree；
After the temperature display of the second thermocouple 26 and the first thermocouple 23 is stablized, the 4th heater 9 and slender acanthopanax are gradually reduced first
The output power of hot device 10, at the same for guarantee the second thermocouple 26 temperature it is constant, gradually increase plasma electrode 3 power until
4th heater 9 and 10 output power of the 5th heater are 0；
After the 4th heater 9 and 10 output power of the 5th heater are 0, the power of third heater 8 is gradually reduced, is simultaneously
Guarantee the constant power for gradually increasing plasma electrode 3 of the temperature of the second thermocouple 26 until 8 output power of third heater exports
It is 0；
In the 4th heater 9, during the power of the 5th heater 10 and third heater 8 is reduced, silicon single crystal bar 13 is continuous
It is roughened and is mutually connected to become in the form of low angle boundary the quasi-monocrystalline silicon of an entirety；Power to third heater 8 is reduced
To after 0, the silicon between silicon single crystal bar 13, which has solidified, to be finished, and is mainly copper atom in melt, is then slowly stopped plasma electrode
3, the power of primary heater 6 and secondary heater 7；
After crystal ingot is cooled to room temperature, crystal ingot and ceramic ring 15 are taken out together, then break ceramic ring 15 into pieces, takes out crystal ingot,
The copper segregation area on crystal top is cut away, mono-like silicon ingot can be prepared.
Further, the assemble method of large scale silicon ingot preparation facilities used for solar batteries includes the following steps：
Plasma electrode 3 and top muff 5 are arranged into upper furnace body；
Silicon single crystal bar 13 is placed on the silicon single crystal bar molybdenum clamping device 12, the arrangement uniform orientation of silicon single crystal bar 13, it will
Silicon single crystal bar molybdenum clamping device 12 is regularly arranged to be put into molybdenum crucible 11, molybdenum crucible 11 is installed in ceramic crucible set 14, so
Ceramic ring 15 is put into inside ceramic crucible set 14 afterwards, its underpart is closely connect with the upper side of molybdenum crucible 11, and by high purity copper
Powder or tiny copper billet are arranged between silicon single crystal bar 13；
Arrange primary heater 6, secondary heater 7, third heater 8, the 4th heater 9 and the 5th heater 10 are in ceramic earthenware
The outside of crucible set 14, and the primary heater 6 is located in the upper end opening of ceramic crucible set 14.The secondary heater
7, third heater 8 and the 4th heater 9 are arranged in the periphery that the ceramic crucible covers 14, the 5th heater from top to bottom
10 are arranged in the bottom of the ceramic crucible set 14, in secondary heater 7, third heater 8, the 4th heater 9 and slender acanthopanax
Lower furnace body side muff 22 is arranged in the outside of hot device 10；Finally first is arranged in the periphery of lower furnace body side muff 22
Electromagnetic inductor 18 and the second electromagnetic inductor 19, first electromagnetic inductor 18 and the second electromagnetic inductor 19 are from top to bottom
Setting, and gap is provided between the first electromagnetic inductor 18 and the second electromagnetic inductor 19.
When installing the molybdenum crucible 11, the crucible pole of 11 bottom of molybdenum crucible is made to sequentially pass through ceramic earthenware from top to bottom
It is stretched out out of described furnace body behind the bottom of crucible set 14, the bottom of the 5th heater 10 and lower furnace body 2, then by the first thermocouple 23
It is arranged into the thermocouple mounting groove of the crucible pole.
Second thermocouple 26 is sequentially passed through into the side wall of lower furnace body 2, the first electromagnetic inductor 18 and the second electromagnetic inductor 19
Between space and lower furnace body side muff 22 after, so that the medial end of second thermocouple 26 is located at third heater 8
Between lower furnace body side muff 22.
Silicon single crystal bar is arranged in by described device and method using molybdenum silicon single crystal bar clamping device by identical crystal orientation array
In the composite crucible that molybdenum crucible and ceramic ring are constituted, cosolvent is then added into molybdenum crucible（High-purity copper powder or tiny copper
Block）, make melt generate temperature gradient solidification by multi-temperature zone and plasma melting.On the one hand plasma electrode improves silicon melt
Solidification interface stability, constitutional supercooling degree is on the one hand reduced by the volatilization of copper.Finally make monocrystalline block array fast
Speed is solidified as the quasi- monocrystalline of one piece of entirety, ceramic finally by destroying using the characteristic with high gradient solidification high-speed solidification
Ring takes out silicon ingot, and this method has the characteristics that crystalline rate is high.
Claims (4)
1. a kind of preparation method of large scale silicon ingot used for solar batteries, it is characterised in that include the following steps：
The assembling of large scale silicon ingot preparation facilities used for solar batteries；
10 are evacuated to the furnace body in the preparation facilities-5Pa is filled with inert gas to 0.5MPa, starts described device device
In primary heater（6）, secondary heater（7）, third heater（8）, the 4th heater（9）With the 5th heater（10）,
Until passing through the observation window at the top of the furnace body（25）Observe molybdenum crucible（11）Several interior silicon single crystal bar molybdenum clamping devices
（12）On silicon single crystal bar（13）Between high-purity copper powder or tiny copper billet melt until so that the first thermocouple（24）Temperature exists
Between 1062 DEG C -1162 DEG C, then start plasma electrode（3）, while adjusting primary heater（6）, secondary heater（7）,
Third heater（8）, the 4th heater（9）With the 5th heater（10）Power keep melt temperature constant, pass through control the
Two thermocouples（26）Test temperature control silicon single crystal bar（13）Local melting degree；
To the second thermocouple（26）With the first thermocouple（23）Temperature display stablize after, gradually reduce the 4th heater first（9）With
5th heater（10）Output power, while for guarantee the second thermocouple（26）Temperature it is constant, gradually increase plasma electrode
（3）Power until the 4th heater（9）With the 5th heater（10）Output power is 0；
To the 4th heater（9）With the 5th heater（10）After output power is 0, third heater is gradually reduced（8）Power,
It is simultaneously the second thermocouple of guarantee（26）Temperature constant gradually increase plasma electrode（3）Power until third heater（8）
Output power output is 0；
In the 4th heater（9）, the 5th heater（10）And third heater（8）Power reduce during, silicon single crystal bar
（13）Constantly it is roughened and is mutually connected to become in the form of low angle boundary the quasi-monocrystalline silicon of an entirety；To third heater（8）
Power reduce to after 0, silicon single crystal bar（13）Between silicon solidified and finished, be mainly copper atom in melt, then slowly stop
Only plasma electrode（3）, primary heater（6）And secondary heater（7）Power；
After crystal ingot is cooled to room temperature, by crystal ingot and ceramic ring（15）It takes out together, then by ceramic ring（15）It breaks into pieces, takes out brilliant
The copper segregation area on crystal top is cut away, can prepare mono-like silicon ingot by ingot.
2. the preparation method of large scale silicon ingot used for solar batteries as described in claim 1, which is characterized in that the solar energy
Battery is as follows with the assemble method of large scale silicon ingot preparation facilities；
By plasma electrode（3）With top muff（5）It is arranged into upper furnace body；
By silicon single crystal bar（13）It is placed into the silicon single crystal bar molybdenum clamping device（12）On, silicon single crystal bar（13）Arrangement crystal orientation one
It causes, by silicon single crystal bar molybdenum clamping device（12）It is regularly arranged to be put into molybdenum crucible（11）In, by molybdenum crucible（11）It is installed to ceramic earthenware
Crucible set（14）It is interior, then by ceramic ring（15）It is put into ceramic crucible set（14）Inside, its underpart and molybdenum crucible（11）Upper side
Close connection, and high-purity copper powder or tiny copper billet are arranged in silicon single crystal bar（13）Between；
Arrange primary heater（6）, secondary heater（7）, third heater（8）, the 4th heater（9）With the 5th heater
（10）In ceramic crucible set（14）Outside, and the primary heater（6）Positioned at the ceramic crucible set（14）Upper end open
On mouth, the secondary heater（7）, third heater（8）With the 4th heater（9）It is arranged in the ceramic crucible from top to bottom
Set（14）Periphery, the 5th heater（10）It is arranged in the ceramic crucible set（14）Bottom, in secondary heater
（7）, third heater（8）, the 4th heater（9）With the 5th heater（10）Outside arrange lower furnace body side muff
（22）；Finally in lower furnace body side muff（22）Periphery be arranged the first electromagnetic inductor（18）With the second electromagnetic induction
Device（19）, first electromagnetic inductor（18）With the second electromagnetic inductor（19）It is arranged from top to bottom, and the first electromagnetic induction
Device（18）With the second electromagnetic inductor（19）Between be provided with gap.
3. the preparation method of large scale silicon ingot used for solar batteries as claimed in claim 2, it is characterised in that：Described in installation
Molybdenum crucible（11）When, make the molybdenum crucible（11）The crucible pole of bottom sequentially passes through ceramic crucible set from top to bottom（14）Bottom
Portion, the 5th heater（10）And lower furnace body（2）Bottom after stretched out out of described furnace body, then by the first thermocouple（23）Arrangement
Into the thermocouple mounting groove of the crucible pole.
4. the preparation method of large scale silicon ingot used for solar batteries as claimed in claim 2, it is characterised in that：By the second thermocouple
（26）Sequentially pass through lower furnace body（2）Side wall, the first electromagnetic inductor（18）With the second electromagnetic inductor（19）Between space
And lower furnace body side muff（22）Afterwards, make second thermocouple（26）Medial end be located at third heater（8）With under
Furnace body side muff（22）Between.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111364100A (en) * | 2020-04-30 | 2020-07-03 | 江苏协鑫硅材料科技发展有限公司 | Monocrystalline silicon ingot and preparation method thereof, cast monocrystalline silicon piece and preparation method thereof |
| CN113774484A (en) * | 2021-09-13 | 2021-12-10 | 浙江大学杭州国际科创中心 | Gallium oxide crystal growth method and combined crucible for growing gallium oxide crystal |
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| CN111364100A (en) * | 2020-04-30 | 2020-07-03 | 江苏协鑫硅材料科技发展有限公司 | Monocrystalline silicon ingot and preparation method thereof, cast monocrystalline silicon piece and preparation method thereof |
| CN113774484A (en) * | 2021-09-13 | 2021-12-10 | 浙江大学杭州国际科创中心 | Gallium oxide crystal growth method and combined crucible for growing gallium oxide crystal |
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Application publication date: 20181116 |