CN201626998U - Thermal field of czochralski silicon monocrystal - Google Patents
Thermal field of czochralski silicon monocrystal Download PDFInfo
- Publication number
- CN201626998U CN201626998U CN2010201388609U CN201020138860U CN201626998U CN 201626998 U CN201626998 U CN 201626998U CN 2010201388609 U CN2010201388609 U CN 2010201388609U CN 201020138860 U CN201020138860 U CN 201020138860U CN 201626998 U CN201626998 U CN 201626998U
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- exhaust chest
- thermal field
- silicon monocrystal
- heat
- preservation cylinder
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Abstract
The utility model relates to silicon monocrystal producing equipment, in particular to a thermal field of czochralski silicon monocrystal. An upper exhaust chamber is arranged at the upper part of a side insulating blanket, and a lower exhaust chamber is arranged at the lower part. The upper exhaust chamber and the lower exhaust chamber are communicated through a gas-guide tube. A through hole is arranged on an insulating barrel. The upper exhaust chamber is communicated with a cavity of the insulating barrel through the through hole on the insulating barrel. A gas pumping port is arranged at the lower part of a furnace body, and the lower exhaust chamber is communicated with the gas pumping port. Large amount of SiO volatiles generated in a silicon monocrystal growth process are exhausted from the upper part of the thermal field thereby reducing the pollution of the SiO volatiles for a heater, a crucible and the insulating barrel, improving the use life of working components and favoring to grow silicon monocrystal with high quality. At the same time, the SiO volatiles are deposited in the exhaust chambers thereby conveniently cleaning and improving the efficiency.
Description
Technical field
The utility model relates to silicon single crystal manufacturing apparatus, particularly a kind of thermal field of czochralski silicon monocrystal growth.
Background technology
Silicon single-crystal is a main raw material of making unicircuit and solar cell; the preparation of silicon single-crystal is a crucible of the chunk polysilicon raw material being put into the furnace chamber of vacuum or protective atmosphere; by heater heats polycrystal raw material is melted; then; by young brilliant guiding, grow into the ideal silicon single-crystal, charge into process gas from vacuum furnace chamber top simultaneously; and, satisfy the growth technique requirement by the extraction discharging of furnace chamber bottom.But a large amount of volatile matters that produce in the silicon monocrystal growth process based on SiO, easily stick on system core parts well heater, crucible, heat-preservation cylinder and the pump-line inwall, thermal field component is polluted and corrodes, attached to the volatile matter on the pump-line inwall, need a large amount of cleaning times of cost, influence thermal field component work-ing life, reduced production efficiency, had influence on the quality of silicon single-crystal simultaneously.
The utility model content
Technical problem to be solved in the utility model is: the thermal field that a kind of czochralski silicon monocrystal growth is provided; change the glide path of shielding gas in thermal field; reduced the pollution of volatile matter to well heater, crucible and heat-preservation cylinder; improve the work-ing life of working part, and helped growing high-quality silicon single-crystal.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of thermal field of czochralski silicon monocrystal growth, comprise body of heater, has furnace chamber in the body of heater, the bottom of furnace chamber is provided with the insulation base plate, be connected with heat-preservation cylinder on the insulation base plate, the outside of heat-preservation cylinder is with the side insulation quilt, the heat-preservation cylinder loam cake is established the insulation cover plate, put on the shelf and establish guide shell at the insulation cover plate, at heat-preservation cylinder, in the keeping warmth space that insulation base plate and insulation cover plate constitute well heater and crucible are set, on the top of side insulation quilt exhaust chest is set, the bottom of side insulation quilt is provided with down exhaust chest, is communicated with by airway between last exhaust chest and the following exhaust chest, on heat-preservation cylinder, offer through hole, last exhaust chest communicates by through hole on the heat-preservation cylinder and heat-preservation cylinder inner chamber, in the bottom of body of heater bleeding point is set, and following exhaust chest and bleeding point communicate.
Last exhaust chest and following exhaust chest are the ring cavity member.
The material of last exhaust chest and following exhaust chest is a graphite.
In the connection airway of exhaust chest and following exhaust chest in the side insulation quilt along the circumference uniform distribution.
The quantity of airway has 4 ~ 8.
The diameter of airway is 20 ~ 30mm.
The material of airway is a graphite.
The beneficial effects of the utility model are, the a large amount of SiO volatile matters that produce in the silicon monocrystal growth process are discharged from thermal field top, no longer pass through well heater and plumbago crucible, avoid volatile matter to adhere to the graphite member of thermal field inwall and thermal field lower part, and can prevent that a large amount of volatile matters from entering pump-line and mechanical pump.Reduced the pollution of volatile matter, improved the work-ing life of working part, and helped growing high-quality silicon single-crystal well heater, crucible and heat-preservation cylinder.Simultaneously, volatile matter is deposited in the exhaust chest, is convenient to cleaning, has improved efficient.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
The structural representation of Fig. 1 thermal field of the present utility model.
The sectional view of Fig. 2 side insulation quilt of the present utility model.
Among the figure, 1, body of heater, 2, furnace chamber, 3, the insulation cover plate, 4, go up exhaust chest, 5, guide shell, 6, heat-preservation cylinder, 7, the side insulation quilt, 8, airway, 9, quartz crucible, 10, plumbago crucible, 11, well heater, 12, the graphite pallet, 13, exhaust chest down, 14, electrode, 15, the insulation base plate, 16, pressure pin, 17, bleeding point, 18, melt silicon, 19, silicon single crystal rod.
Embodiment
As shown in Figure 1.The thermal field of czochralski silicon monocrystal growth of the present invention comprises body of heater 1, the furnace chamber 2 of hollow, and furnace chamber 2 tops are provided with inlet mouth, and the lower sidewall of body of heater 1 is provided with the bleeding point 17 of two symmetrical distributions.Be provided with insulation base plate 15 in the furnace chamber 2, insulation base plate 15 is fixed in the bottom of body of heater 1.Be connected with heat-preservation cylinder 6 on the insulation base plate 15, the outside attachment side insulation quilt 7 of heat-preservation cylinder 6, side insulation quilt 7 inside have airway 8, side insulation quilt 7 bottoms are provided with down exhaust chest 13, top is provided with exhaust chest 4, and the making material of last exhaust chest 4, following exhaust chest 13 and airway 8 is graphite.The top of heat-preservation cylinder 6 offers circular through hole and communicates with last exhaust chest 4.Heat-preservation cylinder 6 tops are connected with insulation cover plate 3, and guide shell 5 upper edges are placed on the insulation cover plate 3, and the lower edge extend in the quartz crucible 9.Pressure pin 16 passes the through hole of body of heater 1 bottom, graphite pallet 12 affixed and pressure pins 16, and plumbago crucible 10 is fixed on the graphite pallet 12, and quartz crucible 9 is placed on the inside of plumbago crucible 10.The bottom of body of heater 1 is provided with the electrode 14 of a pair of symmetrical distribution, graphite heater 11 affixed with electrode 14 on.
The working process of thermal field of the present invention:
The chunk polysilicon raw material is put into quartz crucible 9, connect power supply, electric current is input to well heater 11 by electrode 14, well heater 11 produces heat after energising, polycrystalline silicon raw material in the quartz crucible 9 is heated, and make its fusing, form polysilicon fused solution 18, put into seed crystal then, guiding grows silicon single crystal bar 19.In the process of growth of silicon single crystal bar 19; otherwise open closely go into shielding gas; as argon gas; enter furnace chamber 2 from body of heater 1 top, enter the gas of furnace chamber 2, skim over molten silicon 18 upper surfaces by guide shell 5; between the gap of quartz crucible 9 and guide shell 5, upwards flow; the through hole on self-heat conserving tube 6 tops enters exhaust chest 4, enters down exhaust chest 13 by airway 8 again, flows out thermal field by bleeding point 17.
In thermal field of the present invention; the liquid level that shielding gas skims over melt silicon 18 makes progress when flowing; directly enter exhaust chest 4; because last exhaust chest 4 and following exhaust chest 13 all connect along circumference; and airway 8 also is along the circumference uniform distribution; pressure that make to go up exhaust chest 4 along the circumferential direction can uniform distribution, thereby makes shielding gas evenly flow to exhaust chest 4 at circumferential direction, helps the stable of thermal field.Simultaneously, the volatile component that carries in the gas is in flow process, progressively be deposited on the inwall of exhaust chest 4, airway 8, following exhaust chest 13, seldom can flow in pump-line and the vacuum pump, and last exhaust chest 4, airway 8, following exhaust chest 13 are graphite piece, be convenient to cleaning, saved the cleaning time, improved production efficiency.
Claims (7)
1. the thermal field of czochralski silicon monocrystal growth, comprise body of heater (1), has furnace chamber (2) in the body of heater (1), the bottom of furnace chamber (2) is provided with insulation base plate (15), be connected with heat-preservation cylinder (6) on the insulation base plate (15), the outside of heat-preservation cylinder (6) is with side insulation quilt (7), heat-preservation cylinder (6) loam cake is established insulation cover plate (3), on insulation cover plate (3), set up guide shell (5), in heat-preservation cylinder (6), in the keeping warmth space that insulation base plate (15) and insulation cover plate (3) constitute well heater (11) and crucible are set, it is characterized in that: exhaust chest (4) is set on the top of described side insulation quilt (7), the bottom of side insulation quilt (7) is provided with down exhaust chest (13), be communicated with by airway (8) between last exhaust chest (4) and the following exhaust chest (13), on heat-preservation cylinder (6), offer through hole, last exhaust chest (4) communicates by through hole on the heat-preservation cylinder (6) and heat-preservation cylinder (6) inner chamber, in the bottom of body of heater (1) bleeding point (17) is set, and following exhaust chest (13) and bleeding point (17) communicate.
2. the thermal field of czochralski silicon monocrystal growth according to claim 1 is characterized in that: described upward exhaust chest (4) and following exhaust chest (13) are the ring cavity member.
3. the thermal field of czochralski silicon monocrystal growth according to claim 2 is characterized in that: the described material that goes up exhaust chest (4) and following exhaust chest (13) is a graphite.
4. the thermal field of czochralski silicon monocrystal according to claim 1 and 2 growth is characterized in that: the airway (8) of exhaust chest in the described connection (4) and following exhaust chest (13) in side insulation quilt (7) along the circumference uniform distribution.
5. the thermal field of czochralski silicon monocrystal growth according to claim 4, it is characterized in that: the quantity of described airway (8) has 4 ~ 8.
6. the thermal field of czochralski silicon monocrystal growth according to claim 4, it is characterized in that: the diameter of described airway (8) is 20 ~ 30mm.
7. the thermal field of czochralski silicon monocrystal growth according to claim 4, it is characterized in that: the material of described airway (8) is a graphite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201388609U CN201626998U (en) | 2010-03-17 | 2010-03-17 | Thermal field of czochralski silicon monocrystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201388609U CN201626998U (en) | 2010-03-17 | 2010-03-17 | Thermal field of czochralski silicon monocrystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201626998U true CN201626998U (en) | 2010-11-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010201388609U Expired - Fee Related CN201626998U (en) | 2010-03-17 | 2010-03-17 | Thermal field of czochralski silicon monocrystal |
Country Status (1)
| Country | Link |
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| CN (1) | CN201626998U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102618921A (en) * | 2012-04-11 | 2012-08-01 | 浙江金瑞泓科技股份有限公司 | Double-exhaust flat-plate epitaxial furnace |
| CN105525346A (en) * | 2014-10-21 | 2016-04-27 | 镇江大成新能源有限公司 | Novel single crystal furnace |
| CN105887207A (en) * | 2014-10-21 | 2016-08-24 | 镇江大成新能源有限公司 | Low-power-consumption monocrystal furnace |
| CN108193263A (en) * | 2018-01-26 | 2018-06-22 | 山东大海新能源发展有限公司 | A kind of monocrystalline produces stove |
| CN112226811A (en) * | 2020-10-09 | 2021-01-15 | 西安邦泰电子技术有限公司 | Thermal field for single crystal furnace and single crystal furnace |
-
2010
- 2010-03-17 CN CN2010201388609U patent/CN201626998U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102618921A (en) * | 2012-04-11 | 2012-08-01 | 浙江金瑞泓科技股份有限公司 | Double-exhaust flat-plate epitaxial furnace |
| CN102618921B (en) * | 2012-04-11 | 2015-06-03 | 浙江金瑞泓科技股份有限公司 | Double-exhaust flat-plate epitaxial furnace |
| CN105525346A (en) * | 2014-10-21 | 2016-04-27 | 镇江大成新能源有限公司 | Novel single crystal furnace |
| CN105887207A (en) * | 2014-10-21 | 2016-08-24 | 镇江大成新能源有限公司 | Low-power-consumption monocrystal furnace |
| CN108193263A (en) * | 2018-01-26 | 2018-06-22 | 山东大海新能源发展有限公司 | A kind of monocrystalline produces stove |
| CN112226811A (en) * | 2020-10-09 | 2021-01-15 | 西安邦泰电子技术有限公司 | Thermal field for single crystal furnace and single crystal furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101110 Termination date: 20130317 |