CN204237890U - A kind of crystalline silicon directional solidification growth equipment - Google Patents
A kind of crystalline silicon directional solidification growth equipment Download PDFInfo
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- CN204237890U CN204237890U CN201420698732.8U CN201420698732U CN204237890U CN 204237890 U CN204237890 U CN 204237890U CN 201420698732 U CN201420698732 U CN 201420698732U CN 204237890 U CN204237890 U CN 204237890U
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Abstract
The utility model discloses a kind of crystalline silicon directional solidification growth equipment, comprise thawing furnace chamber, melt furnace chamber upper end and be provided with opening for feed, opening for feed place is provided with material inlet valve, the lower end of material inlet valve and be positioned at thawing furnace indoor and be provided with melting pot, melting pot surrounding is provided with well heater one, be positioned at lower end in the middle part of melting pot and be provided with silicon liquid flow ports, silicon liquid flow ports region is provided with silicon liquid-flow controlling valve or silicon flow quantity control lever, silicon liquid flow ports lower end is provided with silicon liquid sprinker, silicon ingot directional solidification system is provided with below silicon liquid sprinker, directional solidification system comprises control temperature gradient heater, be arranged on the silicon ingot support tray below well heater and the electromagnetic inductor in order to retrain liquid-state silicon.The beneficial effects of the utility model are: silicon material is melted this device and crystal growth carries out simultaneously, greatly reduce energy consumption, and reduce production cost, there is high crystal growth rate, effectively raise production efficiency, be conducive to the propagation and employment in market.
Description
Technical field
The utility model relates to photovoltaic polycrystalline cast ingot field, particularly a kind of crystalline silicon directional solidification growth equipment.
Background technology
Since human society enters industrial civilization, the demand for the energy is growing, and along with technical progress and population growth, mankind's energy demand exponentially level increases; In the past about 200 years industrialization society evolution in, the energy of the mankind mainly comes from the non-renewable fossil energy such as oil, coal and Sweet natural gas.In recent years, the drawback of fossil energy progressively shows, the finiteness of fossil energy resource causes the reserves of fossil energy to be about to be exhausted by the mankind in coming few decades, and in addition, the extensive use of fossil energy also causes the negative impact being difficult to reverse to human environment.
Under the energy background of our times, the mankind start the alternative energy of development and utilization, and therefore the emerging renewable energy source such as sun power, wind energy becomes the focus that the mankind pay close attention to.Solar energy power generating, the sustainability of its energy and to advantages such as the friendly of environment, in fast development in recent ten years in this century, cost of electricity-generating moves closer to the electric power that traditional fossil energy produces, and can reduce costs further future at visible, obtain status more competitive than traditional energy at energy field.
Current solar energy power generating mainly uses crystal silicon solar battery component to transfer sunlight to electric energy, crystal silicon solar energy battery has polysilicon and silicon single crystal two kinds by substrate, wherein polysilicon uses the ingot casting grow polysilicon crystal technology based on directional solidification technique, and silicon single crystal mainly comprises pulling of silicon single crystal and zone melting single-crystal technology; Ingot casting polycrystalline has the advantage of low cost, high efficiency, but due to the existence of the defects such as dislocation, crystal mass is lower than monocrystalline; The principal feature of monocrystalline is that crystal mass is good, but production cost is high, production efficiency is low is unfavorable for scale production.
For the problem in correlation technique, at present effective solution is not yet proposed.
Utility model content
The purpose of this utility model is to provide a kind of crystalline silicon directional solidification growth equipment, can be used for crystalline silicon directional solidification growth, silicon materials directional freeze is purified, and the directional solidification growth of silicon single crystal.The utility model can realize the crystal growth of high quality, high efficiency, low cost, contributes to the pursuit that sun power industry is laid equal stress on for low cost and high quality, effectively overcomes currently available technology above shortcomings.
The purpose of this utility model is achieved through the following technical solutions:
A kind of crystalline silicon directional solidification growth equipment, comprise thawing furnace chamber, described thawing furnace chamber upper end is provided with opening for feed, described opening for feed place is provided with the material inlet valve matched, the lower end of described material inlet valve and be positioned at described thawing furnace indoor and be provided with melting pot, described melting pot surrounding is provided with well heater one, and the lower end, middle part being positioned at described melting pot is provided with silicon liquid flow ports, described silicon liquid flow ports region is provided with the silicon liquid-flow controlling valve or silicon flow quantity control lever that match, and described silicon liquid flow ports lower end is provided with silicon liquid sprinker, the silicon ingot directional solidification system matched is provided with below described silicon liquid sprinker, described silicon ingot directional solidification system comprises the well heater two be arranged between described silicon liquid flow ports and silicon liquid sprinker, and described silicon liquid sprinker lower end is provided with silicon ingot support tray, and described silicon ingot support tray surrounding is surrounded with electromagnetic inductor, and the silicon material be arranged in described silicon ingot support tray constrains in the useful range of electromagnetic force by the electromagnetic force of described electromagnetic inductor.
Further, described thawing furnace indoor is provided with the insulation quilt one matched.
Further, described melting pot surrounding is provided with the graphite protective plate matched.
Further, described silicon liquid flow ports lower end and the inner side being positioned at insulation quilt one is provided with the ceramic backplate matched.
Further, be provided with liquid-state silicon in described silicon ingot support tray, and be provided with the insulation quilt two matched outside described silicon ingot support tray, described electromagnetic inductor is arranged at upper end and the liquid-state silicon surrounding of described insulation quilt two.
Further, described silicon ingot support tray upper end is provided with height backplate.
Further, described height backplate is made up of stupalith.
Preferably, described electromagnetic inductor is similar round or class square structure, and the size dimension of described electromagnetic inductor is 10-60cm, and operating frequency is within the scope of 1-10MKHz, and working current is within 500-30000A, and voltage is within 1-1000V.
A kind of crystalline silicon directional solidification growth technology, comprising: silicon material is entered into described thawing furnace chamber interior by opening for feed, melts in melting pot, and timing supplements appropriate solid state si material in described melting pot;
Silicon liquid after melting carries out solidifying, growing brilliant process with the silicon ingot directional solidification system that 360 degree angles flow into below with given pace by silicon liquid flow ports and silicon liquid sprinker;
Wherein, solidifying and growing in brilliant process, because described silicon ingot support tray surrounding is surrounded with electromagnetic inductor, the silicon material be arranged in described silicon ingot support tray constrains in the useful range of electromagnetic force by the electromagnetic force of described electromagnetic inductor; Molten silicon directional freeze from bottom to top in process of setting, meanwhile, described silicon ingot support tray is drop-down with certain speed, and during to guarantee that crystal silicon grows, solid-liquid interface maintains stable height;
After the weight of crystal growth reaches setting weight, stop adding silicon material, continue the growth of bottom silicon ingot, until terminate;
Finally, Slow cooling silicon ingot, and take out.
Further, in silicon liquid flow process, the flow of silicon flow quantity control lever or silicon liquid-flow controlling valve control liquid-state silicon can be led to;
Further, in thawing silicon material process, described well heater two maintains the specified temp of systemic presupposition, to guarantee the thermograde needed for directional freeze.
The beneficial effects of the utility model are: this apparatus structure is simple, easy manufacture, and by this device and technology, the thawing of silicon material and crystal growth are carried out simultaneously, greatly reduces energy consumption, and reduce production cost, use this technology in addition, there is high crystal growth rate, effectively raise production efficiency, be conducive to the propagation and employment in market.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of a kind of crystalline silicon directional solidification growth equipment according to the utility model embodiment 1;
Fig. 2 is the structural representation of a kind of crystalline silicon directional solidification growth equipment according to the utility model embodiment 2 and embodiment 3.
In figure:
1, furnace chamber is melted; 2, insulation quilt one; 3, well heater one; 4, graphite protective plate; 5, material inlet valve; 6, melting pot; 7, silicon flow quantity control lever; 8, silicon liquid-flow controlling valve; 9, silicon liquid flow ports; 10, ceramic backplate; 11, well heater two; 12, silicon liquid sprinker; 13, liquid-state silicon; 14, solid state si; 15, electromagnetic inductor; 16, silicon ingot support tray; 17, insulation quilt two; 18, opening for feed; 19, height backplate.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, the every other embodiment that those of ordinary skill in the art obtain, all belongs to the scope of the utility model protection.
As shown in Figure 1, according to a kind of crystalline silicon directional solidification growth equipment of the utility model embodiment, comprise and melt furnace chamber 1, described thawing furnace chamber 1 upper end is provided with opening for feed 18, described opening for feed 18 place is provided with the material inlet valve 5 matched, the lower end of described material inlet valve 5 and be positioned at described thawing furnace chamber 1 and be provided with melting pot 6, the surrounding of described melting pot 6 is provided with well heater 1, and the lower end, middle part being positioned at described melting pot 6 is provided with silicon liquid flow ports 9, described silicon liquid flow ports 9 region is provided with the silicon liquid-flow controlling valve 8 or silicon flow quantity control lever 7 that match, and described silicon liquid flow ports 9 lower end is provided with silicon liquid sprinker 12, the silicon ingot directional solidification system matched is provided with below described silicon liquid sprinker 12.
Described silicon ingot directional solidification system comprises the well heater 2 11 be arranged between described silicon liquid flow ports 9 and silicon liquid sprinker 12, and described silicon liquid sprinker 12 lower end is provided with silicon ingot support tray 16, and described silicon ingot support tray 16 surrounding is surrounded with electromagnetic inductor 15; Described well heater 2 11 may be used for controlling the temperature of thermal field in crystalline silicon directional freeze process and thermograde, the surrounding of described silicon material support tray 16 have around electromagnetic inductor 15, described electromagnetic inductor 15 produces constraint electromagnetic field, the liquid-state silicon above silicon ingot support tray 16 is constrained in fixing scope.
The insulation quilt 1 matched is provided with inside described thawing furnace chamber 1; Described insulation quilt 1 can effectively ensure to melt the temperature in furnace chamber 1, is conducive to, to the thawing of fixing crystalline substance material, improve thawing efficiency.
Described melting pot 6 surrounding is provided with the graphite protective plate 4 matched; Due to graphite heat conducting and resistant to elevated temperatures feature, under contributing to high temperature, protect melting pot 6, effectively extend the work-ing life of device.
The lower end of described silicon liquid the flow ports 9 and inner side being positioned at insulation quilt 1 is provided with the ceramic backplate 10 matched; Described ceramic backplate 10 effectively can be avoided insulation quilt chip to come off and enter silicon liquid, improves stability and the reliability of the use of whole device.
Be provided with liquid-state silicon 13 in described silicon ingot support tray 16, and be provided with the insulation quilt 2 17 matched outside described silicon ingot support tray 16, described electromagnetic inductor 15 is arranged at upper end and liquid-state silicon 13 surrounding of described insulation quilt 2 17; Described silicon ingot support tray 16 upper end is provided with height backplate 19; Described height backplate 19 is made up of stupalith, and described height backplate 19 and electromagnetic inductor 15 effectively can limit the height of the silicon material be arranged on described silicon ingot support tray 16, effectively prevent the phenomenon of overflow because silicon material is more.
Described electromagnetic inductor 15 is similar round or class square structure, and the size dimension of described electromagnetic inductor 15 is 10-60cm, and operating frequency is within the scope of 1-10MKHz, and working current is within 500-30000A, and voltage is in 1-1000V.
A kind of crystalline silicon directional solidification growth technology, comprise: silicon material is entered into described thawing furnace chamber 1 by opening for feed 18 inner, melt in melting pot 6, and regularly in described melting pot 6, supplement appropriate solid state si material, meanwhile, the silicon ingot directional solidification system that the silicon liquid after melting flow into below by silicon liquid flow ports 9 and silicon liquid sprinker 12 carries out solidifying, growing brilliant process;
Wherein, solidifying and growing in brilliant process, because described silicon ingot support tray 16 surrounding is surrounded with electromagnetic inductor 15, the silicon material be arranged in described silicon ingot support tray 16 constrains in the useful range of electromagnetic force by the electromagnetic force of described electromagnetic inductor 15;
Described silicon liquid is retrained within the specific limits by the electromagnetic force that electromagnetic inductor 15 produces on silicon ingot supporting disk 16, the process of setting of liquid silicon liquid is directional freeze from bottom to top, simultaneously by drop-down for silicon ingot supporting disk 16, during to guarantee that crystal silicon grows, solid-liquid interface maintains stable height;
Wherein, the pedestal of described silicon ingot support tray 16 can use graphite material to make, and also partly can select or all select the stupalith such as silicon carbide or silicon nitride, and silicon nitride coating also can be used for the release coating material between silicon and graphite simultaneously; Silicon liquid flows to after on silicon ingot support tray 16, and with the graphite of silicon ingot support tray 16 for source of radiation is to body of heater radiation heat release, thus directional freeze process from bottom to top occurs silicon fluid column on silicon ingot support tray 16;
In directional freeze process, regulate the drop-down speed of graphite silicon ingot support tray 16, maintain the long brilliant solid-liquid interface height of silicon ingot and keep constant, also control to melt the dirty speed of furnace chamber 1 silicon liquid, to keep silicon free surface constant height simultaneously;
In thawing silicon material process, described well heater 2 11 maintains the default specified temp of system, to guarantee the thermograde needed for directional freeze.
In monocrystalline growing process, seed of single crystal silicon and silicon material can be laid on graphite silicon ingot support tray 16, open top heater melts silicon material and part seed crystal, then control to melt furnace chamber 1 liquid-state silicon to flow into, after fluid column reaches specified altitude assignment, start long brilliant technique, maintain silicon ingot solid-liquid interface height in long brilliant process and silicon liquid free interface is highly stable.
After a certain amount of silicon material total amount completes the brilliant process of above-mentioned length, terminate the reinforced of solid-state and liquid-state silicon material, continue crystal growing process until technique terminates.
Described silicon ingot support tray 16 bottom and surrounding can arrange insulation quilt, for specific technique, and open under specific processing condition, start the directional solidification processes of crystal.
Wherein, in silicon liquid flow process, the flow that silicon flow quantity control lever 7 controls liquid-state silicon can be led to;
After the weight of crystal growth reaches setting weight, stop adding silicon material, continue the growth of bottom silicon ingot, until terminate;
Finally, Slow cooling silicon ingot, and take out.
Use directional solidification technique of the present utility model, because the thawing of silicon material and crystal growth carry out simultaneously, greatly reduce energy consumption; This technology can use monkey simultaneously, and reduce crucible cost, this technology has high crystal growth rate, therefore highly efficient in productivity; When the silicon ingot of the 40cm length of side, the silicon ingot of more than 1000Kg weight can be grown every day.
As used this technology growth silicon single crystal, not only energy consumption and cost and pulling of crystals or district melt polycrystalline and compare and can greatly reduce, and can improve quality further, have oxygen level low, the advantages such as defect concentration is low.
In order to clearer understanding the technical solution of the utility model, applicant exemplifies following examples:
Embodiment 1
In FIG, about 50-80Kg silicon material heating and melting in furnace chamber 1 in melting pot 7 will be melted, after silicon material partial melting, flow on the silicon ingot support tray 16 of bottom directional solidification system by silicon liquid flow ports 9, keep in silicon liquid flow process melting the temperature in furnace chamber and melting state.
Crystal orientation solidifies in process of growth, and described thawing furnace chamber 1 can be supplemented by material inlet valve 5 and add a certain amount of silicon material, has enough silicon material to melt continuously to meet and flows into the long crystallographic system system of bottom directional freeze.
Silicon liquid through silicon liquid flow ports 9 flows to silicon ingot support tray 16 by described silicon liquid sprinker 12, and the sprinkling mouth that described silicon liquid sprinker 12 has 360 degree sprays silicon liquid downwards.
The silicon liquid be sprayed onto on silicon ingot support tray 16 is limited in specific scope by the electromagnetic force that electromagnetic inductor 15 produces, silicon liquid fluid column size is about the class square-section of 40*40cm, as shown in the figure, be arranged at the liquid-state silicon 13 on described silicon ingot support tray 16, the a certain particular value of liquid-column height between 5-20cm of described liquid-state silicon 13, the size of electromagnetic inductor 15 is slightly larger than silicon fluid column, and described electromagnetic inductor 15 height is consistent with liquid-state silicon 13 liquid-column height.
After liquid-column height reaches intended height, open insulation quilt 2 17, start long brilliant process, in long brilliant process, well heater 2 11 maintains the temperature of 1425 degree, to guarantee the silicon liquid temp gradient needed for directional freeze.
Silicon liquid is directional freeze from bottom to top on silicon ingot support tray 16 coils, directional freeze speed at 8-12cm/h, in directional freeze process, described silicon ingot support tray 16 pulls down, its pulling rate ensures that the height of solid-liquid interface is constant, control from the silicon flow velocity melting furnace chamber 1 inflow simultaneously, guarantee that silicon liquid liquid level and liquid-column height are stablized.
In crystalchecked process of growth, described silicon liquid flow ports 9 controls flow approximately at 20-50Kg/h by silicon flow quantity control lever 7 or silicon liquid-flow controlling valve 8, flow velocity just in time maintains liquid level on silicon liquid and stablizes, in technological process, melt furnace chamber 1 and melt silicon material with the speed being close to or higher than 20-50Kg/h.
In the present embodiment, the electromagnetic force that the liquid-state silicon 13 in all silicon fluid columns is all produced by electromagnetic inductor 15 constrains in specified range.
After the weight of crystal growth reaches setting weight, stop adding solid-state and liquid-state silicon material, continue the growth of bottom silicon ingot, until terminate, now only need maintain solid-liquid interface height constant, without the need to maintaining top liquid level height, the temperature of described well heater 2 11 is progressively reduced to 1415 degree.
Finally, Slow cooling silicon ingot, and take out.
Embodiment 2
In fig. 2, by the about 50-80Kg silicon material heating and melting in melting pot 7 in described thawing furnace chamber 1, after silicon material partial melting, flowed on the silicon ingot support tray 16 of bottom directional solidification system by silicon liquid flow ports 9.
Crystal orientation solidifies in process of growth, and melting furnace chamber can add a certain amount of silicon material by material inlet valve 5 is supplementary, melts and the long crystallographic system system of liquid-state silicon inflow bottom directional freeze to meet silicon liquid continuous print.
Silicon liquid through silicon liquid flow ports 9 flows to silicon ingot support tray 16 by silicon liquid sprinker 12, and the sprinkling mouth that silicon liquid sprinker 12 has 360 degree sprays silicon liquid downwards.
The silicon liquid be sprayed onto on silicon ingot support tray 16 dish is limited in specific scope by the electromagnetic force that electromagnetic inductor 15 produces, silicon liquid fluid column size is about the class square-section of 40*40cm, the a certain particular value of liquid-state silicon 13 liquid-column height between 5-20cm, the certain altitude backplate 19 that the top of fluid column is made up of stupalith constrains in certain space, the electromagnetic force that the fluid column of the below about necessarily high (0.5-5cm) of fluid column is produced by electromagnetic induction retrains within the specific limits, and the size of described electromagnetic inductor 15 is slightly larger than silicon fluid column.
After liquid-column height reaches intended height, open insulation quilt 2 17, start long brilliant process, in long brilliant process, well heater 2 11 maintains the temperature of 1425 degree, to guarantee the silicon liquid temp gradient needed for directional freeze.
Silicon liquid is directional freeze from bottom to top on silicon ingot support tray 16 coils, directional freeze speed at 8-12cm/h, in directional freeze process, silicon ingot support tray 16 pulls down, and its pulling rate ensures that the height of solid-liquid interface is constant.Control from the silicon flow velocity melting furnace chamber 1 inflow simultaneously, guarantee that silicon liquid liquid level and liquid-column height are stablized.
In crystalchecked process of growth, silicon liquid flow ports 9 controls flow approximately at 20-50Kg/h by silicon flow quantity control lever 7 or silicon liquid-flow controlling valve 8, flow velocity just in time maintains liquid level on silicon liquid and stablizes, and in technological process, melts furnace chamber 1 and melts silicon material with the speed being close to or higher than 20-50Kg/h.
In the present embodiment, there is the electromagnetic force that the liquid-state silicon 13 in part silicon fluid column all produces by electromagnetic inductor 15 constrains in specified range, and the height backplate 19 separately having the liquid-state silicon 13 of fluid column upper part to be made up of stupaliths such as silicon nitrides constrains in particular space.
After the weight of crystal growth reaches setting weight, stop adding solid-state and liquid-state silicon material, continue the growth of silicon ingot, until terminate.Now only need maintain solid-liquid interface height constant, without the need to maintaining top liquid level height, the temperature of well heater 2 11 is progressively reduced to 1415 degree.
Finally, Slow cooling silicon ingot, and take out.
Embodiment 3
In fig. 2, it is 40cm*40cm that silicon ingot support tray 16 is placed sectional dimension, and thickness is the seed of single crystal silicon of 1-2cm, and a little silicon material (about 5-20Kg) in seed crystal top side, uniform spreading is at seed crystal upper surface.
Heater 2 11, heat the silicon material and single crystal seed that are placed on silicon ingot support tray 16, when silicon material temperature degree is close to fusing point, open electromagnetic inductor 15, guarantee that the silicon liquid of certain altitude melted is constrained in particular space by electromagnetic force, continue heating simultaneously and melt silicon material on silicon ingot support tray 16 and portion of monocrystalline seed crystal from top to bottom; In thaw process, by melting the about 50-80Kg silicon material heating and melting in furnace chamber 1 in melting pot 7, after silicon material partial melting, flowed into by silicon liquid flow ports 9 on the silicon of the thawing liquid of the silicon ingot support tray 16 of bottom directional solidification system.Melting pot 7 can supplement solid state si material by material inlet valve 5.
When the temperature of control heater 2 11 after single crystal seed partial melting (0.1-0.5cm), keep solid-liquid interface constant, continue through silicon liquid flow ports 9 simultaneously and flow on the silicon of the thawing liquid of the silicon ingot support tray 16 of bottom directional solidification system.
After the silicon liquid fluid column of silicon ingot support tray 16 reaches the particular value between setting height 5-20cm, close silicon liquid flow ports 9.
Open insulation quilt 2 17 and start the long crystalline substance of directional freeze, open silicon liquid flow ports in long brilliant process, control the flowing of silicon liquid, guarantee that silicon liquid liquid level keeps stable height.
In long brilliant process, silicon ingot support tray 16 pulls downwards, pulls speed to equal crystal growth rate, namely keeps solid-liquid interface height constant.
In long brilliant process, the temperature of well heater 2 11 is reduced to 1425 degree, to maintain liquid-state silicon 13 constant temp gradient in 20min.
In crystalchecked process of growth, silicon liquid flow ports 9 controls flow approximately at 20-50Kg/h by silicon flow quantity control lever 7 or silicon liquid-flow controlling valve 8, flow velocity just in time maintains liquid level on silicon liquid and stablizes, and in technological process, melts furnace chamber 1 and melts silicon material with the speed being close to or higher than 50Kg/h.
In the present embodiment, the electromagnetic force that the liquid-state silicon 13 in part silicon fluid column is produced by electromagnetic inductor 15 constrains in specified range, separately has the liquid-state silicon 13 of fluid column upper part to be constrained in particular space by stupaliths such as silicon nitrides.
After the weight of crystal growth reaches setting weight, stop adding solid-state and liquid-state silicon material, continue the growth of silicon single crystal ingot, until terminate.Now only need maintain solid-liquid interface height constant, without the need to maintaining top liquid level height, the temperature of well heater 2 11 is progressively reduced to 1415 degree.
Finally, Slow cooling silicon ingot, and take out.
This apparatus structure is simple, easy manufacture, and by this device and technology, the thawing of silicon material and crystal growth are carried out simultaneously, greatly reduces energy consumption, and reduce production cost, use this technology in addition, there is high crystal growth rate, effectively raise production efficiency, be conducive to the propagation and employment in market.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.
Claims (7)
1. a crystalline silicon directional solidification growth equipment, comprise and melt furnace chamber (1), it is characterized in that, described thawing furnace chamber (1) upper end is provided with opening for feed (18), described opening for feed (18) place is provided with the material inlet valve (5) matched, the lower end of described material inlet valve (5) and be positioned at described thawing furnace chamber (1) and be provided with melting pot (6), described melting pot (6) surrounding is provided with well heater one (3), and the lower end, middle part being positioned at described melting pot (6) is provided with silicon liquid flow ports (9), described silicon liquid flow ports (9) region is provided with the silicon liquid-flow controlling valve (8) or silicon flow quantity control lever (7) that match, and described silicon liquid flow ports (9) lower end is provided with silicon liquid sprinker (12), described silicon liquid sprinker (12) below is provided with the silicon ingot directional solidification system matched, described silicon ingot directional solidification system comprises the well heater two (11) be arranged between described silicon liquid flow ports (9) and silicon liquid sprinker (12), and described silicon liquid sprinker (12) lower end is provided with silicon ingot support tray (16), described silicon ingot support tray (16) surrounding is surrounded with electromagnetic inductor (15), and the silicon material be arranged in described silicon ingot support tray (16) constrains in the useful range of electromagnetic force by the electromagnetic force of described electromagnetic inductor (15).
2. crystalline silicon directional solidification growth equipment according to claim 1, is characterized in that, described thawing furnace chamber (1) inner side is provided with the insulation quilt one (2) matched.
3. crystalline silicon directional solidification growth equipment according to claim 2, is characterized in that, described melting pot (6) surrounding is provided with the graphite protective plate (4) matched.
4. crystalline silicon directional solidification growth equipment according to claim 3, is characterized in that, the lower end of described silicon liquid flow ports (9) and the inner side being positioned at insulation quilt one (2) is provided with the ceramic backplate (10) matched.
5. crystalline silicon directional solidification growth equipment according to claim 1, it is characterized in that, liquid-state silicon (13) is provided with in described silicon ingot support tray (16), and be provided with the insulation quilt two (17) matched outside described silicon ingot support tray (16), described electromagnetic inductor (15) is arranged at upper end and liquid-state silicon (13) surrounding of described insulation quilt two (17).
6. crystalline silicon directional solidification growth equipment according to claim 5, is characterized in that, described silicon ingot support tray (16) upper end is provided with height backplate (19), and described height backplate (19) is made up of stupalith.
7. crystalline silicon directional solidification growth equipment according to claim 5, it is characterized in that, described electromagnetic inductor (15) is similar round or class square structure, and the size dimension of described electromagnetic inductor is 10-60cm, operating frequency is within the scope of 1-10MKHz, working current is within 500-30000A, and operating voltage is within 1-1000V.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420698732.8U CN204237890U (en) | 2014-11-19 | 2014-11-19 | A kind of crystalline silicon directional solidification growth equipment |
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| CN201420698732.8U CN204237890U (en) | 2014-11-19 | 2014-11-19 | A kind of crystalline silicon directional solidification growth equipment |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104372407A (en) * | 2014-11-19 | 2015-02-25 | 李剑 | Equipment and method for directional solidification growth of crystalline silicon |
| CN105063747A (en) * | 2015-07-21 | 2015-11-18 | 李剑 | Liquid continuous feeding polysilicon casting equipment and production method thereof |
| CN107779951A (en) * | 2017-12-17 | 2018-03-09 | 孟静 | The continuous growing device of silicon crystal |
| CN107964681A (en) * | 2017-12-17 | 2018-04-27 | 孟静 | The continuous growing method of silicon crystal |
| CN108193267A (en) * | 2018-01-25 | 2018-06-22 | 山东大海新能源发展有限公司 | A kind of polysilicon ingot casting equipment |
-
2014
- 2014-11-19 CN CN201420698732.8U patent/CN204237890U/en not_active Withdrawn - After Issue
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104372407A (en) * | 2014-11-19 | 2015-02-25 | 李剑 | Equipment and method for directional solidification growth of crystalline silicon |
| CN105063747A (en) * | 2015-07-21 | 2015-11-18 | 李剑 | Liquid continuous feeding polysilicon casting equipment and production method thereof |
| CN107779951A (en) * | 2017-12-17 | 2018-03-09 | 孟静 | The continuous growing device of silicon crystal |
| CN107964681A (en) * | 2017-12-17 | 2018-04-27 | 孟静 | The continuous growing method of silicon crystal |
| CN108754610A (en) * | 2017-12-17 | 2018-11-06 | 长泰惠龙新材料科技有限公司 | The continuous growing device of silicon crystal |
| CN107964681B (en) * | 2017-12-17 | 2019-08-06 | 江苏金晖光伏有限公司 | The continuous growing method of silicon crystal |
| CN108754610B (en) * | 2017-12-17 | 2020-03-17 | 嘉兴金瑞光伏科技有限公司 | Continuous growth device for silicon crystal |
| CN108193267A (en) * | 2018-01-25 | 2018-06-22 | 山东大海新能源发展有限公司 | A kind of polysilicon ingot casting equipment |
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