CN108193263A - A kind of monocrystalline produces stove - Google Patents

A kind of monocrystalline produces stove Download PDF

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Publication number
CN108193263A
CN108193263A CN201810075664.2A CN201810075664A CN108193263A CN 108193263 A CN108193263 A CN 108193263A CN 201810075664 A CN201810075664 A CN 201810075664A CN 108193263 A CN108193263 A CN 108193263A
Authority
CN
China
Prior art keywords
furnace body
crucible
graphite crucible
guide rail
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810075664.2A
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Chinese (zh)
Inventor
甘大元
唐珊珊
刘坤
张鹏飞
张健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHANDONG DAHAI NEW ENERGY DEVELOPMENT Co Ltd
Original Assignee
SHANDONG DAHAI NEW ENERGY DEVELOPMENT Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHANDONG DAHAI NEW ENERGY DEVELOPMENT Co Ltd filed Critical SHANDONG DAHAI NEW ENERGY DEVELOPMENT Co Ltd
Priority to CN201810075664.2A priority Critical patent/CN108193263A/en
Publication of CN108193263A publication Critical patent/CN108193263A/en
Pending legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30Mechanisms for rotating or moving either the melt or the crystal
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses a kind of monocrystalline to produce stove, affiliated monocrystalline production equipment field, and the monocrystalline for providing an a kind of stove Multi-bar of quick production monocrystal produces stove.Setting graphite crucible in furnace body, graphite crucible inside setting silica crucible, graphite crucible outside setting heating unit, bottom of furnace body sets moving guide rail, graphite crucible is arranged on the moving guide rail, and the sidewall of the furnace body is provided with fire door, and the moving guide rail leads to the fire door;Silica crucible top is provided with isolating device, isolating device is divided into evenly distributed small cylindric slider by partition board, cylindric slider communicates up and down, cylindric slider is in cellular circular arrangement, snorkel is provided at the top of furnace body, the pipe end of supplying gas of furnace interior is connected with round nozzle, and bottom of furnace body is provided with exhaust pipe, switch valve is connected on exhaust pipe.It is mainly used for quickly producing single crystal silicon material.

Description

A kind of monocrystalline produces stove
Technical field
The invention belongs to monocrystalline production equipment field, more particularly to a kind of monocrystalline production stove.
Background technology
Single crystal growing furnace be one kind in inert gas (based on nitrogen, helium) environment, it is with graphite heater that polysilicon etc. is more Brilliant material fusing, with the equipment of Grown by CZ Method dislocation-free monocrystalline.
The single crystal growing furnace of 106149047 A of Patent No. CN includes furnace body, and furnace interior is equipped with graphite crucible, graphite crucible It is interior to be equipped with silica crucible, side heater is provided on the outside of graphite crucible, tunger tube is further included, flow control is provided on tunger tube Valve processed.By being provided with flow control valve on tunger tube, it can ensure crystal bar not with the continuous progress of pulling single crystal silicon Under the premise of by oxidation, by adjusting flow control valve, the supply of argon gas is gradually reduced, so as to save argon gas, meanwhile, argon gas Supply reduction also avoid argon gas enter after single crystal growing furnace excluded from aspirating hole again during take away a large amount of heat, it is real Existing energy-saving and emission-reduction, are provided with bottom heater in the bottom of graphite crucible, are the thawings in order to accelerate polycrystalline silicon raw material, shorten former The thawing time of material can greatly improve production efficiency.But it is needed when producing monocrystalline silicon to whole more in silica crucible Crystal silicon material carries out reaction production, and inefficiency is unfavorable for mass producing.
Invention content
The technical problems to be solved by the invention are, according to the described technical problem of above-mentioned background technology, to provide one kind The monocrystalline production stove of one stove Multi-bar of quick production monocrystal.
The technical solution adopted by the present invention is that a kind of monocrystalline produces stove, including furnace body, graphite crucible, silica crucible, isolation Device, snorkel are provided with graphite crucible in the furnace body, and the graphite crucible is internally provided with silica crucible, the graphite Crucible is closely coupled with silica crucible, and heating unit, the heating unit and the stone are provided with outside the graphite crucible Black crucible is closely coupled, and the heating unit is uniformly fitted in the graphite crucible outer wall, and the bottom of furnace body is provided with Moving guide rail, the graphite crucible are arranged on the moving guide rail, and the sidewall of the furnace body is provided with fire door, the movement Guide rail leads to the fire door;The silica crucible top is provided with isolating device, the cross sectional dimensions of the isolating device with The cross sectional dimensions of the silica crucible is identical, and the isolating device is divided into evenly distributed small cylindric isolation by partition board Body, the cylindric slider communicate up and down, and the cylindric slider is in cellular circular arrangement, the height of the isolating device Degree is higher than the height of the silica crucible, is connected at the top of the isolating device and draws high device, and the device that draws high is including more The fixed iron chains of group, motor, the motor are connected with rotating roller, and described multigroup fixed iron chains one end is uniformly connected to described Isolating device, the other end be linked at belonging to rotating roller on;Snorkel is provided at the top of the furnace body, outside the furnace body Snorkel is connected with inert gas production equipment, and the pipe end of supplying gas of the furnace interior is connected with round nozzle, the furnace body Bottom is provided with exhaust pipe, and switch valve is connected on the exhaust pipe.
Further, the graphite crucible bottom is provided with stent, and shifting roller, the movement are provided on the stent Idler wheel is arranged in the moving guide rail, and the shifting roller is connected with motor, and the motor can drive shifting roller to be turned It moves and is moved on moving guide rail.
Further, the inboard wall of furnace body surrounding is provided with reflecting layer, and the furnace body outer wall is provided with insulating layer.
Further, the bottom of furnace body is provided with bearing, and the bearing is connected with lower margin fixed frame with ground.Further , flow control valve, control switch are provided on the snorkel.
Compared with prior art, the present invention with following advantageous effect, the cross sectional dimensions of the isolating device and institute The cross sectional dimensions for stating silica crucible is identical, and the isolating device is divided into evenly distributed small cylindric isolation by partition board Body, the cylindric slider communicate up and down, and the cylindric slider is in cellular circular arrangement, the height of the isolating device Higher than the height of the silica crucible, the isolating device is driven by motor to be entered in the silica crucible degree, will be heated Polysilicon detached, be separated into the small lattice being separated from each other, each cylindric slider can be in the feelings for being passed through inert gas Independent monocrystal rod is generated under condition, the formation speed of monocrystal can be accelerated;The bottom of furnace body is provided with moving guide rail, described Graphite crucible is arranged on the moving guide rail, and the sidewall of the furnace body is provided with fire door, and the moving guide rail leads to described Fire door, the graphite crucible, silica crucible pass through moving guide rail pass-out, carry out filler.In conclusion the present invention has soon Fast-growing produces the advantages of monocrystal.
Description of the drawings
Fig. 1 is a kind of structural profile illustration of monocrystalline production stove of the present invention;
Fig. 2 is the structure diagram of the moving guide rail.
In figure:01st, furnace body 02, graphite crucible 03, silica crucible 04, isolating device 05, snorkel 06, plus Thermal 07, moving guide rail 08, flow control valve 09, fire door 10, control switch 11, cylindric slider 12nd, fixed iron chains 13, motor 14, rotating roller 15, round nozzle 16, exhaust pipe 17, switch valve 18, movement Idler wheel 19, motor 20, reflecting layer 21, insulating layer 22, lower margin fixed frame.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work Embodiment shall fall within the protection scope of the present invention.
Technical scheme of the present invention is illustrated with reference to Fig. 1, Fig. 2, a kind of monocrystalline produces stove, including furnace body (01), stone Black crucible (02), silica crucible (03), isolating device (04), snorkel (05), the furnace body (01) is interior to be provided with graphite crucible (02), the graphite crucible (02) is internally provided with silica crucible (03), and the graphite crucible (02) is tight with silica crucible (03) It is close to be connected, heating unit (06), the heating unit (06) and the graphite earthenware are provided with outside the graphite crucible (02) Crucible (02) is closely coupled, and the heating unit (06) is uniformly fitted in described graphite crucible (02) outer wall, the furnace body (01) bottom is provided with moving guide rail (07), and the graphite crucible (02) is arranged on the moving guide rail (07), the stove Body (01) side wall is provided with fire door (09), and the moving guide rail (07) leads to the fire door (09);The silica crucible (03) top is provided with isolating device (04), the cross sectional dimensions of the isolating device (04) and the horizontal stroke of the silica crucible (03) Sectional dimension is identical, and the isolating device (04) is divided into evenly distributed small cylindric slider (11) by partition board, described Cylindric slider (11) communicates up and down, and the cylindric slider (11) is in cellular circular arrangement, the isolating device (04) height is higher than the height of the silica crucible (03), is connected at the top of the isolating device (04) and draws high device, institute State draw high device include multigroup fixed iron chains (12), motor (13), the motor (13) is connected with rotating roller (14), described Multigroup fixed iron chains (12) one end be uniformly connected to the isolating device (04), the other end is linked at affiliated rotating roller (14) on;Snorkel (05) is provided at the top of the furnace body (01), the external snorkel (05) of the furnace body (01) is connected with lazy Property gas production facility, internal snorkel (05) end of the furnace body (01) is connected with round nozzle (15), the furnace body (01) bottom is provided with exhaust pipe (16), and switch valve (17) is connected on the exhaust pipe (16).
Further, graphite crucible (02) bottom is provided with stent, and shifting roller (18) is provided on the stent, The shifting roller (18) is arranged in the moving guide rail (07), and the shifting roller (18) is connected with motor (19), described Motor (19) can drive shifting roller (18) to be rotated and be moved on moving guide rail (07).
Further, furnace body (01) the inner wall surrounding is provided with reflecting layer (20), and furnace body (01) outer wall is provided with Insulating layer (21).
Further, furnace body (01) bottom is provided with bearing, and the bearing is connected with lower margin fixed frame with ground (22).Further, flow control valve (08), control switch (10) are provided on the snorkel (05).
Beneficial effects of the present invention are illustrated with reference to Fig. 1, Fig. 2, the cross sectional dimensions of the isolating device (04) with The cross sectional dimensions of the silica crucible (03) is identical, and the isolating device (04) is divided into evenly distributed small circle by partition board Column slider (11), the cylindric slider (11) communicate up and down, and the cylindric slider (11) is in cellular circle Arrangement, the height of the isolating device (04) are higher than the height of the silica crucible (03), and the isolating device (04) is by electronic Machine (13) drive enter the silica crucible (03) in, the polysilicon of heating is detached, be separated into be separated from each other it is small Lattice, each cylindric slider (11) can generate independent monocrystal rod in the case where being passed through inert gas, can accelerate list The formation speed of crystal;Furnace body (01) bottom is provided with moving guide rail (07), and the graphite crucible (02) is arranged on described Moving guide rail (07) on, furnace body (01) side wall is provided with fire door (09), and the moving guide rail (07) leads to described Fire door (09), the graphite crucible (02), silica crucible (03) carry out filler by moving guide rail (07) pass-out.To sum up institute It states, the present invention has the advantages that quickly to produce monocrystal.
The application method and operation principle of the present invention are illustrated with reference to Fig. 1, Fig. 2, a kind of monocrystalline production stove of the present invention At runtime, the shifting roller (18) is driven by the graphite crucible (02), quartzy earthenware by the motor (19) Crucible (03) is removed by the fire door (09), the polysilicon of collection is put into the silica crucible (03), by motor (19) It drives the graphite crucible (02), silica crucible (03) being moved to inside the furnace body (01) and it is heated, heat Inert gas is passed through by the snorkel (05) in the furnace body (01) after the completion, while by the isolating device (04) it moves down and is moved in the silica crucible (03), the polysilicon is split, in the isolating device (04) Every group of cylindric slider (11) can generate one group of monocrystal rod.
A kind of monocrystalline production stove of the present invention, purposes are quick production single crystal silicon material.
The above is only the better embodiment of the present invention, therefore all constructions according to described in present patent application range, The equivalent change or modification that feature and principle are done, is included in the range of present patent application.

Claims (5)

1. a kind of monocrystalline produces stove, it is characterised in that:Including furnace body (01), graphite crucible (02), silica crucible (03), isolation dress (04), snorkel (05) are put, is provided with graphite crucible (02) in the furnace body (01), the graphite crucible (02) is internally provided with Silica crucible (03), the graphite crucible (02) and silica crucible (03) are closely coupled, are set outside the graphite crucible (02) There is heating unit (06), the heating unit (06) and the graphite crucible (02) are closely coupled, the heating unit (06) Uniform to be fitted in described graphite crucible (02) outer wall, furnace body (01) bottom is provided with moving guide rail (07), the stone Black crucible (02) is arranged on the moving guide rail (07), and furnace body (01) side wall is provided with fire door (09), the shifting Dynamic guide rail (07) leads to the fire door (09);Silica crucible (03) top is provided with isolating device (04), the isolation The cross sectional dimensions of device (04) is identical with the cross sectional dimensions of the silica crucible (03), and the isolating device (04) is by partition board Evenly distributed small cylindric slider (11) is divided into, the cylindric slider (11) communicates up and down, described cylindric For slider (11) in cellular circular arrangement, the height of the isolating device (04) is higher than the height of the silica crucible (03), It is connected at the top of the isolating device (04) and draws high device, the device that draws high includes multigroup fixed iron chains (12), motor (13), the motor (13) is connected with rotating roller (14), and described multigroup fixed iron chains (12) one end is uniformly connected to described Isolating device (04), the other end be linked at belonging to rotating roller (14) on;Snorkel is provided at the top of the furnace body (01) (05), the external snorkel (05) of the furnace body (01) is connected with inert gas production equipment, and the furnace body (01) is internal to be sent Tracheae (05) end is connected with round nozzle (15), and furnace body (01) bottom is provided with exhaust pipe (16), the exhaust pipe (16) switch valve (17) is connected on.
2. a kind of monocrystalline production stove according to claim 1, it is characterised in that:Graphite crucible (02) bottom is provided with Stent is provided with shifting roller (18) on the stent, and the shifting roller (18) is arranged in the moving guide rail (07), institute It states shifting roller (18) and is connected with motor (19).
3. a kind of monocrystalline production stove according to claim 1, it is characterised in that:Furnace body (01) the inner wall surrounding is provided with Reflecting layer (20), furnace body (01) outer wall are provided with insulating layer (21).
4. a kind of monocrystalline production stove according to claim 1, it is characterised in that:Furnace body (01) bottom is provided with branch Seat, the bearing are connected with lower margin fixed frame (22) with ground.
5. a kind of monocrystalline production stove according to claim 1, it is characterised in that:Flow is provided on the snorkel (05) Control valve (08), control switch (10).
CN201810075664.2A 2018-01-26 2018-01-26 A kind of monocrystalline produces stove Pending CN108193263A (en)

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CN201810075664.2A CN108193263A (en) 2018-01-26 2018-01-26 A kind of monocrystalline produces stove

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Application Number Priority Date Filing Date Title
CN201810075664.2A CN108193263A (en) 2018-01-26 2018-01-26 A kind of monocrystalline produces stove

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109022813A (en) * 2018-10-19 2018-12-18 苏州苏丰机械科技有限公司 A kind of lateral horizontal drawing refinement furnace
CN109537046A (en) * 2018-11-30 2019-03-29 邢台晶龙新能源有限责任公司 A kind of big thermal field single crystal growing furnace

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010208877A (en) * 2009-03-09 2010-09-24 Sumco Corp Method for growing silicon single crystal and method for producing silicon wafer
CN201626998U (en) * 2010-03-17 2010-11-10 常州天合光能有限公司 Thermal field of czochralski silicon monocrystal
CN102333909A (en) * 2008-12-30 2012-01-25 Memc新加坡私人有限公司 Methods and pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt
CN203229583U (en) * 2013-04-09 2013-10-09 嘉兴学院 Three-rod crystal growth device by pulling method
CN204251759U (en) * 2014-11-27 2015-04-08 乐山新天源太阳能科技有限公司 Single crystal growing furnace
CN106757310A (en) * 2016-12-19 2017-05-31 洛阳金诺机械工程有限公司 A kind of silicon core drawing device
CN206736402U (en) * 2016-07-11 2017-12-12 青海拓日新能源科技有限公司 Single crystal growing furnace for vertical pulling method production silicon single crystal rod
CN206902281U (en) * 2016-07-11 2018-01-19 青海拓日新能源科技有限公司 A kind of single crystal growing furnace

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102333909A (en) * 2008-12-30 2012-01-25 Memc新加坡私人有限公司 Methods and pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt
JP2010208877A (en) * 2009-03-09 2010-09-24 Sumco Corp Method for growing silicon single crystal and method for producing silicon wafer
CN201626998U (en) * 2010-03-17 2010-11-10 常州天合光能有限公司 Thermal field of czochralski silicon monocrystal
CN203229583U (en) * 2013-04-09 2013-10-09 嘉兴学院 Three-rod crystal growth device by pulling method
CN204251759U (en) * 2014-11-27 2015-04-08 乐山新天源太阳能科技有限公司 Single crystal growing furnace
CN206736402U (en) * 2016-07-11 2017-12-12 青海拓日新能源科技有限公司 Single crystal growing furnace for vertical pulling method production silicon single crystal rod
CN206902281U (en) * 2016-07-11 2018-01-19 青海拓日新能源科技有限公司 A kind of single crystal growing furnace
CN106757310A (en) * 2016-12-19 2017-05-31 洛阳金诺机械工程有限公司 A kind of silicon core drawing device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109022813A (en) * 2018-10-19 2018-12-18 苏州苏丰机械科技有限公司 A kind of lateral horizontal drawing refinement furnace
CN109537046A (en) * 2018-11-30 2019-03-29 邢台晶龙新能源有限责任公司 A kind of big thermal field single crystal growing furnace

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Application publication date: 20180622

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