CN201408748Y - Silicon deep slot structure with depth-to-width ratio - Google Patents
Silicon deep slot structure with depth-to-width ratio Download PDFInfo
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- CN201408748Y CN201408748Y CN2008202222660U CN200820222266U CN201408748Y CN 201408748 Y CN201408748 Y CN 201408748Y CN 2008202222660 U CN2008202222660 U CN 2008202222660U CN 200820222266 U CN200820222266 U CN 200820222266U CN 201408748 Y CN201408748 Y CN 201408748Y
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Abstract
The utility model provides a silicon deep slot structure with a depth-to-width ratio, which can be applied widely and is provided with a masking layer of high protective performance, exact depth and width control, high anisotropic property to silicon and high etch rate. An MgO film is deposited on the silicon substrate as a corrosion masking layer. The etched slot depth on the silicon substrate reaches to 420 microns; the depth-to-width ratio is 4:1; the verticality of side wall reaches to 89 DEG. The utility model utilizes MgO film as the material of the corrosion masking layer; etching selection ratio to silicon is rather high; the depth of deposited MgO film before etching is 1.5 microns and the depth of the etched MgO film, as the corrosion masking layer, is 100nm to 250nm. The utilitymodel effectively solves the problems that the masking layer will lose the function of protecting silicon or the masking layer will fall off because it is too thick. The etched deep slot, with a depth-to-width ratio, which has the advantages of upright side wall, well reproducibility, lower cost, environmental protection, etc., can be applied widely in the field of processing micro-parts.
Description
Technical field
The utility model belongs to the semiconductor microelectronic technology field, relates generally to the etching groove structure as the silicon chip of the substrate of micro element, specifically is exactly a kind of silica-based deep groove structure of high-aspect-ratio.
Background technology
Microelectromechanical systems (MEMS) is the new and high technology that development in recent years is got up, it adopts advanced semiconductor process techniques, micro mechanical structure and circuit are integrated, the function of have information gathering, handling and carry out, and advantages such as volume is little, in light weight, low in energy consumption are arranged.At present, along with the development of integrated technique and little (receiving) systems technology, (high aspect ratio mi-crostructures HARMS) becomes one of key structure of making advanced micro-device to suitable to fine structure with high depth-width ratio.This structure can significantly be improved technical indicators such as actuating force, frequency of utilization scope, sensitivity and the displacement of micro element and be widely used in Micro-Opto-Electro-Mechanical Systems (MOEMS), information stores, optical communication, high power device and numerous areas such as extreme ultraviolet and grenz ray photoetching.Dry etching is with its good anisotropy, high etch rate, the accurate degree of depth and live width control and with the series of advantages such as compatibility of semiconductor industry, be widely used in the making of depth-to-width ratio structure of Si and semiconductor commonly used, photoelectric material.
At present, the deep etching technology that alternately meets of German Bosch company exploitation is widely used, and technology is also ripe.The main feature of this technology is to add deposition process alternately in common response ion etching technology, to realize that protective side wall not by the purpose of overetch, reaches vertical sidewall in a big way.Mainly adopt the carbon fluorine gas as passivator, SF
6As etching agent.In passivating process, feed carbon fluorine gas gas in the reative cell, under the effect of plasma, finish the plasma polymerization process.Therefore this process has the isotropism of height, can all cover the one layer of polymeric diaphragm equably in the surface of silicon chip and deep trouth.In the etching process subsequently, charge into active gases SF in the reative cell
6, and be broken down into SF
+ 5And F
-, open bias voltage, increase the ion energy of vertical direction, the polymer areas that is parallel to substrate surface is preferentially removed.Along with this high directionality, the silicon face in the deep trouth bottom preferentially comes out, with F
-Reaction generates SiF
4Thereby, be etched.Polymer on the silicon trench sidewall has avoided the silicon face on the sidewall to be etched because etching speed has just played the effect of protection slowly.Continuous alternate cycles by polymerization and etching process has just realized that the silicon of high-aspect-ratio loses deeply.At first, this technology generally all is based on the ICP etching system silicon is carried out deep layer processing.Multichannel ICP etching system (Multples-ICP) as the production of Britain STS company.This is the higher etching apparatus of a automaticity, its outside auxiliary equipment and master control system mainly are made up of load chamber, circuit control and the computer system of band manipulator, whole technical process by computer program control, helps the processing of high aspect ratio microstructures fully.The automation of this etching apparatus requires high, can automatically switch etching gas and control etch period, so great majority cost an arm and a leg from external import.Secondly, not only cost an arm and a leg as the carbon fluorine gas of passivator, and the fluorocarbon that produces in etching process is also harmful.
In addition, present normally used masking layer material is photoresist, SiO in the deep erosion of silicon
2, Al and Si
3N
4In deep erosion process, the masking layer material requirements is selected than the high and strict control of energy etching profile.Use SF
6During as the etching gas of silicon, SiO
2And Si
3N
4The selection ratio have only 15: 1 because big, work as SiO to the etching depth of silicon
2And Si
3N
4Thickness easily cause film to come off when excessive; Though make the surface roughness that can guarantee with photoresist after etching profile and the etching, its selectivity to Si is very poor; Use Al as masking layer, selectivity is good, but always there are some metallic residue in silicon face after the etching, easily pollutes.
The utility model project team is retrieved domestic and international patent documentation and the journal article of publishing with regard to theme of the present utility model by the existing data in the Internet and library in the recent period, finds report or the document closely-related and the same with the utility model as yet.
Summary of the invention
The purpose of this utility model is that to overcome the verticality of side wall of silica-based etching groove in the prior art low; low and the shortcoming that comes off easily of masking layer material etching selection ratio; a kind of favorable repeatability is provided; cost is low; be easy to remove after the good and etching of masking layer protectiveness, silicon is carried out anisotropic etching and etch rate is fast and the accurate silica-based deep groove structure of the high-aspect-ratio that is suitable for widely applying of controlling depth and live width.
Below the utility model is elaborated
The utility model is a kind of silicon trench structure of high-aspect-ratio, comprises silicon base., the deep trouth of etching is arranged on silicon base, it is characterized in that: deposition MgO film is as the etching masking layer on silicon base, in silicon base. the groove of going up etching has high-aspect-ratio, and groove depth reaches 420 μ m, and depth-to-width ratio is 4: 1.
The utility model draws by etching technics experiment and research, and the existing big etching selection ratio of MgO again can better controlled etching profile, and removes easily, can be used as desirable masking layer material.
The utility model uses the high MgO film of etching selection ratio as the masking layer material; its energy better controlled etching profile; and remove easily; solved masking layer and in long-time etching, etched away and lose, thereby improved the marginal definition of silicon trench structure the blocked up defective that comes off of causing of the protection of silicon or masking layer.Solve the high-quality problem of the silicon trench of high-aspect-ratio, the silicon trench structure of the high-aspect-ratio that can use in actual production, test and scientific research is provided, satisfied the desirability of micro element processing.
Realization of the present utility model also is: the MgO film thickness that the masking layer before the etching promptly deposits is 1.5 μ m, and after deep etching finished, masking layer was that the MgO film thickness after the etching is 100nm-250nm on the silicon base.
The masking layer of silica-based deep trouth, relevant with the quality of deep trouth, also can influence the deep trouth depth-to-width ratio simultaneously, easily cause film to come off when thickness is excessive.It is 1.5 μ m that the utility model has gone out the MgO film thickness that deposits before the etching according to high-quality silicon trench structure optimization, after deep etching finishes, on the silicon base masking layer just the MgO film thickness after the etching be 100nm-250nm.Both satisfied the needs of processing, and can guarantee that again the protective value of masking layer is good, thereby improve the high-aspect-ratio of the high-quality and the silicon trench of silica-based deep groove structure.
Realization of the present utility model also is: silicon trench structure top wide 95-110 μ m, and bottom wide 75-85 μ m, groove depth is 400-420 μ m, verticality of side wall reaches 88 °-89 °.External automation equipment is adopted in the processing of common silica-based high-aspect-ratio groove structure, and home equipment has the low advantage of cost, but adopts homemade manual equipment can't realize this silica-based high-aspect-ratio groove structure at present.The utility model adopts home equipment to realize the silica-based deep groove structure of high-aspect-ratio.
Realization of the present utility model also is: the design needs silicon trench according to micro element can be processed as through hole.Silica-based deep trouth in the MEMS (micro electro mechanical system) is that the structure according to micro element designs, and designed structure may be deep trouth sometimes, may be through hole sometimes, and the utility model can be processed as through hole with silicon trench according to the design needs of micro element.This is even more important in micro element processing.
Because the utility model is constantly tested in research practice, is explored, the practice of repeated multiple times and for the modification and the adjustment of structure, design, preferably obtained favorable repeatability, cost is low, pollution-free, the silica-based deep groove structure of the high-aspect-ratio of extensive prospect is arranged in actual industrial production, the masking layer that the silica-based deep groove structure of this high-aspect-ratio is selected is to the etching selection ratio height of silicon, groove edge after the etching is clear, and masking layer is easy to remove.Having solved masking layer effectively etches away in long-time etching and loses the blocked up technical problem that causes the defective that comes off of the protection of silicon or masking layer.Provide the control of a kind of accurate degree of depth and live width, good anisotropy to lose the silica-based deep groove structure of the high-aspect-ratio that is suitable for widely applying fast deeply.
Description of drawings:
Fig. 1 is the structural representation of the utility model before etching;
Fig. 2 is a finished product structural representation of the present utility model;
Fig. 3 is the utility model etch silicon groove sem photograph;
Fig. 4 is the utility model etching through hole sem photograph; It also is the sem photograph of embodiment 1.
Embodiment:
Be elaborated below in conjunction with accompanying drawing
Embodiment 1: as shown in Figure 1, the micro element processing silicon materials that adopt are as substrate more, need be a series of processing such as substrate machinery cleaning to silicon base 2 after, be to make etching masking layer 1 on the silicon chip in silicon base 2.The utility model is a kind of silicon trench structure of high-aspect-ratio, comprises silicon base, and the groove of etching is arranged on silicon base, and it is the material of masking layer 1 that the utility model adopts the MgO film, to the etching selection ratio height of silicon, and can be to the selection ratio of silicon up to 3000: 1.The thickness of MgO film is 1.5 μ m before the deep etching, and after etching finished, the MgO film of remaining 200nm left and right thickness on the Si substrate was referring to Fig. 2.Make that masking layer 1 can be because of not being etched away the protection that loses silicon in long-time etching, the MgO film is at HCl, NH simultaneously
4Cl, H
2O
2Mixed solution in can remove not only convenient but also fast.
The utility model adopts homemade manual equipment to lose deeply, specifically is to adopt Chinese Academy of Sciences's microelectronics research center ICP-98A High Density Plasma Etching System, uses SF6 and O
2Replace compound deep etching technology deep erosion of silicon carried out technical study, concrete etching technics is as follows:
1 etching.Gas: SF
6Radio-frequency power: 500W; Gas flow: 50sccm; Etch period: 8s, etching bias voltage: 400V;
2 passivation.Gas: O
2Radio-frequency power: 550W; Gas flow: 35sccm; Passivation time: 7s.
Adopt homemade manual equipment to carry out deep etching, save equipment expenses, reduce cost.And can not cause environmental pollution.
After the etching, form deep trouth 3.See Fig. 3.Continue etching, silicon base 2 is that silicon chip was worn by quarter.See Fig. 2.Groove 3 dark 420 μ m after the etching, top is wide to be 98 μ m, the wide 75 μ m in bottom, verticality of side wall is 88.4 °.
The groove 3 of etching has high-aspect-ratio on the silicon base 1 of the micro element of being processed, and groove depth reaches more than the 400 μ m, and depth-to-width ratio is 4: 1, through repeatedly experiment, the good reproducibility of product.Referring to Fig. 4.
Embodiment 2: the structure of silica-based deep trouth and processing are with embodiment 1.Be deposition masking layer 1 on the silicon chip in silicon base 2 wherein, masking layer 1 adopts the MgO film, MgO film thickness 1.5 μ m before the etching.It is graphical to carry out masking layer at silicon face before etching.Masking layer 1 is the rete of protection silicon graphics in the etching process, and the accuracy of gained figure after the depth-to-width ratio of etching structure and the etching is had fundamental influence.Select high-quality masking layer 1 can be strict the profile of control institute etching; Silicon there is good selectivity, promptly, masking material is not produced tangible etching only to silicon etching; Masking material is easy to remove, and and CMOS process compatible.In the utility model, by etching technics research, MgO is at SF
6In etch rate be 0.3～3.5nm/min, be far smaller than SiO
2Deng etch rate, etching selection ratio was at least 1500: 1, selectivity is good, simultaneously the MgO film is at HCl, NH
4Cl, H
2O
2Mixed solution in can remove not only convenient but also fast, be desirable masking layer material.Etching gas SF
6Radio-frequency power be 500W, gas flow is 50sccm, etch period is 8s, institute's biasing is 400V in the etching process; Passivation gas O
2Radio-frequency power be 550W, gas flow is 50sccm, passivation time is 7s.MgO film thickness after the etching is 100nm.The top of groove 3 is wide to be 100 μ m, and the bottom is wide by 85, and groove depth is 420 μ m, and verticality of side wall is 89 °.
Embodiment 3: the structure of silica-based deep trouth and processing are with embodiment 1.Be deposition masking layer 1 on the silicon chip in silicon base 2 wherein, masking layer 1 adopts the MgO film, MgO film thickness 1.5 μ m before the etching.Etching gas SF
6Radio-frequency power be 550W, gas flow is 50sccm, etch period is 8s, institute's biasing is 400V in the etching process; Passivation gas O
2Radio-frequency power be 550W, gas flow is 50sccm, passivation time is 7s.MgO film thickness after the etching is 140nm.The top of groove 3 is wide to be 110 μ m, the wide 82 μ m in bottom, and groove depth is 410 μ m, verticality of side wall is 88 °.
Embodiment 4: the structure of silica-based deep trouth and processing are with embodiment 1.Be deposition masking layer 1 on the silicon chip in silicon base 2 wherein, masking layer 1 adopts the MgO film, MgO film thickness 1.5 μ m before the etching.Etching gas SF
6Radio-frequency power be 500W, gas flow is 60sccm, etch period is 8s, institute's biasing is 400V in the etching process; Passivation gas O
2Radio-frequency power be 550W, gas flow is 50sccm, passivation time is 7s.MgO film thickness after the etching is 230nm.The top of groove 3 is wide to be 105 μ m, the wide 81 μ m in bottom, and groove depth is 400 μ m, verticality of side wall is 88.2 °.
Embodiment 5: the structure of silica-based deep trouth and processing are with embodiment 1.Be deposition masking layer 1 on the silicon chip in silicon base 2 wherein, masking layer 1 adopts the MgO film, MgO film thickness 1.5 μ m before the etching.Etching gas SF
6Radio-frequency power be 500W, gas flow is 50sccm, etch period is 9s, institute's biasing is 400V in the etching process; Passivation gas O
2Radio-frequency power be 550W, gas flow is 50sccm, passivation time is 7s.MgO film thickness after the etching is 250nm.The top of groove 3 is wide to be 102 μ m, the wide 80 μ m in bottom, and groove depth is 400 μ m, verticality of side wall is 88.4 °.
Embodiment 6: the structure of silica-based deep trouth and processing are with embodiment 1.Be deposition masking layer 1 on the silicon chip in silicon base 2 wherein, masking layer 1 adopts the MgO film, MgO film thickness 1.5 μ m before the etching.Etching gas SF
6Radio-frequency power be 600W, gas flow is 50sccm, etch period is 9s, institute's biasing is 400V in the etching process; Passivation gas O
2Radio-frequency power be 550W, gas flow is 50sccm, passivation time is 7s.MgO film thickness after the etching is 180nm.The top of groove 3 is wide to be 108 μ m, the wide 82 μ m in bottom, and groove depth is 400 μ m, verticality of side wall is 88.2 °.
Embodiment 7: the structure of silica-based deep trouth and processing are with embodiment 1.Be deposition masking layer 1 on the silicon chip 1 in silicon base 2 wherein, masking layer 1 adopts the MgO film, MgO film thickness 1.5 μ m before the etching.Etching gas SF
6Radio-frequency power be 500W, gas flow is 60sccm, etch period is 9s, institute's biasing is 400V in the etching process; Passivation gas O
2Radio-frequency power be 550W, gas flow is 50sccm, passivation time is 7s.MgO film thickness after the etching is 160nm.The top of groove 3 is wide to be 96 μ m, the wide 79 μ m in bottom, and groove depth is 400 μ m, verticality of side wall is 89 °.
Embodiment 8: the structure of silica-based deep trouth and processing are with embodiment 1.Be deposition masking layer 1 on the silicon chip 1 in silicon base 2 wherein, masking layer 1 adopts the MgO film, MgO film thickness 1.5 μ m before the etching.Etching gas SF
6Radio-frequency power be 500W, gas flow is 50sccm, etch period is 9s, institute's biasing is 350V in the etching process; Passivation gas O
2Radio-frequency power be 550W, gas flow is 50sccm, passivation time is 7s.MgO film thickness after the etching is 175nm.The top of groove 3 is wide to be 101 μ m, the wide 75 μ m in bottom, and groove depth is 415 μ m, verticality of side wall is 88.3 °.
Embodiment 9: the structure of silica-based deep trouth and processing are with embodiment 1.Be deposition masking layer 1 on the silicon chip 1 in silicon base 2 wherein, masking layer 1 adopts the MgO film, MgO film thickness 1.5 μ m before the etching.Etching gas SF
6Radio-frequency power be 500W, gas flow is 50sccm, etch period is 9s, institute's biasing is 400V in the etching process; Passivation gas O
2Radio-frequency power be 550W, gas flow is 50sccm, passivation time is 7s.MgO film thickness after the etching is 134nm.The top of groove 3 is wide to be 110 μ m, the wide 76 μ m in bottom, and groove depth is 406 μ m, verticality of side wall is 88 °.
Embodiment 10:
(1) the graphical technology of masking layer is as follows:
1, clean.In KQ-100DB type numerical control ultrasonic cleaning machine, carry out, and wash down with nitrogen with deionized water and to dry up.
2, plated film.Use the method for electron gun thermal evaporation on the Si sheet, to deposit the MgO of 800nm as masking layer 1.
3, whirl coating.Adopt AZ photoresist and the desk-top sol evenning machine of KW-4A type, with the rotating speed spin coating 30s of 500r/min, the rotating speed spin coating 60s of 3000r/min.
4, preceding baking.Adopt hot plate, 105 ℃ of baking 60s.
5, exposure, development: adopt one group of mask that is respectively 3,5,10,20 μ m live widths, use JKG-2A type mask aligner to carry out contact exposure.Time for exposure 60s.The configuration developer solution is controlled at about one minute developing time.
6, observation.Whether the figure that uses microscopic examination to be transferred on the photoresist reaches requirement.
7, the back baking.Adopt hot plate, 120 ℃ of baking 120s.
8, dispose corresponding masking layer etchant solution, remove the masking layer of not protected by photoresist, make figure transfer to masking layer 1.
9, remove photoresist.The Si sheet is put into acetone soln soak, remove the photoresist on surface.
10, thickness measuring.Use the MP-100S film thickness measuring instrument, MEASUREMENTS OF THIN thickness.
(2) adopt SF
6And O
2To replacing compound deep erosion.Etching gas SF
6Radio-frequency power be 500W, gas flow is 50sccm, etch period is 8s, institute's biasing is 400V in the etching process; Passivation gas O
2Radio-frequency power be 550W, gas flow is 35sccm, passivation time is 7s.
Use SF
6And O
2The technical study that silicon is replaced compound deep erosion is a key of the present utility model.This process can be described as the cyclic process of " etching-polymerization (can regard deposit as)-etching ".Very brief etching at first takes place, and charges into active gases SF in reative cell
6, be broken down into SF
+ 5And F
-, Si and F
-Reaction generates SiF
4, silicon base 2 also is that silicon substrate is to be etched near isotropic mode; Then be transformed into deposition process, just usually said passivation.Feed O
2, form one deck SiO at the masking layer and the thing surface that is etched
2Next be step 3, open bias voltage, increase the ion energy of vertical direction, make the SiO of structural base
2Removed F by ion bombardment
-With the silicon substrate reaction that exposes.Since the directivity of incident ion, sidewall passivation layer is difficult for being bombarded, thereby has protected sidewall, avoids it to continue to be etched.Continue etching then, etching depth is constantly increased, and the sidewall maintenance is steep.Fig. 3 is the SF that obtains by ESEM
6And O
2The silicon trench structure chart after the etching alternately.Fig. 4 is also to be that deep trouth 3 etchings on the silicon chip become behind the through hole resulting photo under ESEM with silicon base 2.
Claims (3)
1. the silica-based deep groove structure of a high-aspect-ratio, comprise silicon base, the groove of etching is arranged on silicon base, it is characterized in that: go up deposition MgO film as masking layer (1) in silicon base (2), groove (3) groove depth that goes up etching in silicon base (2) reaches 420 μ m, and depth-to-width ratio is 4: 1.
2. the silica-based deep groove structure of high-aspect-ratio according to claim 1, it is characterized in that: the MgO film thickness that described masking layer (1) deposits before etching is 1.5 μ m, after groove (3) etching finished, the last masking layer (1) of silicon base (2) was that the MgO film thickness after the etching is 100nm-250nm.
3. the silica-based deep groove structure of high-aspect-ratio according to claim 1 and 2 is characterized in that: the wide 95 μ m-110 μ m in the groove of described silicon trench structure (3) top, and the wide 75 μ m-85 μ m in bottom, verticality of side wall reaches 88 °-89 °.
The silica-based deep groove structure of 4 high-aspect-ratios according to claim 3 is characterized in that: the design needs silicon trench according to micro element can be processed as through hole.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102431960A (en) * | 2011-12-07 | 2012-05-02 | 华中科技大学 | Silicon through hole etching method |
| CN103854968A (en) * | 2012-12-03 | 2014-06-11 | 上海华虹宏力半导体制造有限公司 | Method for manufacturing extra-large funnel type silicon through hole |
| CN104810268A (en) * | 2014-01-29 | 2015-07-29 | 北大方正集团有限公司 | Groove-type power device gate oxide layer preparation method |
| CN103413864B (en) * | 2013-08-07 | 2017-03-01 | 上饶光电高科技有限公司 | A kind of it is applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem |
-
2008
- 2008-11-04 CN CN2008202222660U patent/CN201408748Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102431960A (en) * | 2011-12-07 | 2012-05-02 | 华中科技大学 | Silicon through hole etching method |
| CN103854968A (en) * | 2012-12-03 | 2014-06-11 | 上海华虹宏力半导体制造有限公司 | Method for manufacturing extra-large funnel type silicon through hole |
| CN103413864B (en) * | 2013-08-07 | 2017-03-01 | 上饶光电高科技有限公司 | A kind of it is applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem |
| CN104810268A (en) * | 2014-01-29 | 2015-07-29 | 北大方正集团有限公司 | Groove-type power device gate oxide layer preparation method |
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Granted publication date: 20100217 Termination date: 20101104 |