CN103413864B - A kind of it is applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem - Google Patents
A kind of it is applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000005530 etching Methods 0.000 title claims abstract description 43
- 230000008569 process Effects 0.000 title claims abstract description 19
- 235000008216 herbs Nutrition 0.000 claims abstract description 27
- 210000002268 wool Anatomy 0.000 claims abstract description 27
- 239000003513 alkali Substances 0.000 claims abstract description 22
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 81
- 239000007789 gas Substances 0.000 claims description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 238000004140 cleaning Methods 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 238000007654 immersion Methods 0.000 claims description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 9
- 238000006557 surface reaction Methods 0.000 claims description 9
- 238000009941 weaving Methods 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 16
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 230000004075 alteration Effects 0.000 abstract description 2
- 230000008859 change Effects 0.000 description 3
- 238000005554 pickling Methods 0.000 description 3
- 241000628997 Flos Species 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a kind of be applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem, it is made up of the following step：The first step：Alkali polishes；Second step：Dry method making herbs into wool；Aberration after the method improving making herbs into wool solves the problems, such as class single crystal battery PECVD plated film, the method process is simple, effect is obvious, crystal region and poly-region reflectance have and significantly lower, be conducive to the increase of the lifting especially short circuit current of class monocrystalline photoelectric conversion efficiency of the solar battery, while appearance chromatic difference problem is improved, battery efficiency has 0.1% about lifting.
Description
Technical field
The present invention relates to a kind of be applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem, belong to too
Sun can field of batteries.
Background technology
In area of solar cell, conventional crystalline silion cell has single crystal battery and two kinds of polycrystalline battery.Single crystal battery lacks
Fall into few, pyramid textured surfaces are formed by the anisotropic etch principle of alkali floss, increase the absorption number of times of light, improve and turn
Change efficiency, efficiency is higher by more than 1.5% than polycrystalline；The class monocrystalline set produced with the development of ingot casting technology, existing polycrystalline furnace
Most of monocrystalline and the advantage of polycrystalline.But in process of production, such silicon chip except most of area is<100>The list of crystal orientation
Crystalline region domain（Hereinafter referred to as " crystal region "）Outward, inevitably there are the poly grains of a part of other various crystal orientation（Below
Referred to as " poly-region "）, merely after alkali floss, texturing effect is more far short of what is expected than crystal region for poly-region, PECVD plated film
Difference in appearance is very big afterwards.
Content of the invention
It is an object of the invention to provide a kind of be applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem,
Aberration after the method improving making herbs into wool solves the problems, such as class single crystal battery PECVD plated film, the method process is simple, effect is obvious.
A kind of be applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem, be made up of the following step：The
One step：Alkali polishes；Second step：Dry method making herbs into wool；
The concrete technology step of alkali polishing：1st step：In groove-type cleaning machine, configuration concentration is the NaOH solution of 8-12%；The
2 steps：This NaOH solution is heated to 65-75 DEG C；3rd step：By in the class monocrystalline silicon piece immersion NaOH solution of certain poly-region
The reaction 130-150 second.
The concrete technology step of dry method making herbs into wool：1st step：Using etching SF in dry method wool-weaving machine6Gas is in 900-1100W
Form flat matte in silicon chip surface under power condition；Gas flow is 300-320sccm, and pressure is 20pa, and the time is
60s；2nd step：Form sharp suede structure using etching gas in silicon chip surface reaction, gas is Cl2、O2、SF6, flow
It is respectively 180-220sccm, 350-450sccm, 550-650sccm, pressure is 10pa, power is 900-1100W, and the time is
410s；3rd step：Optimize suede structure using etching gas；Gas is Cl2、O2、SF6, flow respectively 90-110sccm,
180-220sccm, 550-650sccm, pressure is 20pa, and power is 1800-2200W, and the time is 180s；4th step：In reaction chamber
Interior logical oxygen forms oxide film protection layer, O in silicon chip surface2Flow is 750-850sccm, and pressure is 15pa, and power is 580-
620W, the time is 420s.
The reactive ion etching equipment producer that the present invention uses is IPS Corp. of Korea S.
The invention enables forming the little and nanometer-scale texture of point on different crystal orientations, different crystal orientations are outer after PECVD plated film
Sight does not have difference, and photoelectric transformation efficiency has certain lifting simultaneously.
Specific embodiment:
Embodiment 1：
A kind of be applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem, be made up of the following step：The
One step：Alkali polishes；Second step：Dry method making herbs into wool；
The concrete technology step of alkali polishing：1st step：In groove-type cleaning machine, configuration concentration is 8% NaOH solution；2nd
Step：This NaOH solution is heated to 65 DEG C；3rd step：To react in the class monocrystalline silicon piece immersion NaOH solution of certain poly-region
130 seconds.
The concrete technology step of dry method making herbs into wool：1st step：Using etching SF in dry method wool-weaving machine6Gas is in 900W power
Under the conditions of form flat matte in silicon chip surface；Gas flow is 300sccm, and pressure is 20pa, and the time is 60s；2nd step：
Form sharp suede structure using etching gas in silicon chip surface reaction, gas is Cl2、O2、SF6, flow is respectively
180sccm, 350sccm, 550sccm, pressure is 10pa, and power is 900-1100W, and the time is 410s；3rd step：Using etching
Gas optimizes suede structure；Gas is Cl2、O2、SF6, flow is respectively 90sccm, 180sccm, 550sccm, and pressure is
20pa, power is 1800W, and the time is 180s；4th step：Lead to oxygen in reaction intracavity and form oxide film protection layer in silicon chip surface,
O2Flow is 750sccm, and pressure is 15pa, and power is 580W, and the time is 420s.
The reactive ion etching equipment producer that the present invention uses is IPS Corp. of Korea S.
Embodiment 2：
A kind of be applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem, be made up of the following step：The
One step：Alkali polishes；Second step：Dry method making herbs into wool；
The concrete technology step of alkali polishing：1st step：In groove-type cleaning machine, configuration concentration is 10% NaOH solution；2nd
Step：This NaOH solution is heated to 70 DEG C；3rd step：To react in the class monocrystalline silicon piece immersion NaOH solution of certain poly-region
140 seconds.
The concrete technology step of dry method making herbs into wool：1st step：Using etching SF in dry method wool-weaving machine6Gas is in 1000W power
Under the conditions of form flat matte in silicon chip surface；Gas flow is 310sccm, and pressure is 20pa, and the time is 60s；2nd step：
Form sharp suede structure using etching gas in silicon chip surface reaction, gas is Cl2、O2、SF6, flow is respectively
200sccm, 400sccm, 600sccm, pressure is 10pa, and power is 1000W, and the time is 410s；3rd step：Using etching gas
Optimize suede structure；Gas is Cl2、O2、SF6, flow respectively 100sccm, 200sccm, 600sccm, pressure is 20pa, work(
Rate is 2000W, and the time is 180s；4th step：Lead to oxygen in reaction intracavity and form oxide film protection layer, O in silicon chip surface2Flow
For 800sccm, pressure is 15pa, and power is 600W, and the time is 420s.
Remaining is with embodiment 1.
Embodiment 3：
A kind of be applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem, be made up of the following step：The
One step：Alkali polishes；Second step：Dry method making herbs into wool；
The concrete technology step of alkali polishing：1st step：In groove-type cleaning machine, configuration concentration is 12% NaOH solution；2nd
Step：This NaOH solution is heated to 75 DEG C；3rd step：To react in the class monocrystalline silicon piece immersion NaOH solution of certain poly-region
150 seconds.
The concrete technology step of dry method making herbs into wool：1st step：Using etching SF in dry method wool-weaving machine6Gas is in 1100W power
Under the conditions of form flat matte in silicon chip surface；Gas flow is 320sccm, and pressure is 20pa, and the time is 60s；2nd step：
Form sharp suede structure using etching gas in silicon chip surface reaction, gas is Cl2、O2、SF6, flow is respectively
220sccm, 450sccm, 650sccm, pressure is 10pa, and power is 1100W, and the time is 410s；3rd step：Using etching gas
Optimize suede structure；Gas is Cl2、O2、SF6, flow respectively 110sccm, 220sccm, 650sccm, pressure is 20pa, work(
Rate is 2200W, and the time is 180s；4th step：Lead to oxygen in reaction intracavity and form oxide film protection layer, O in silicon chip surface2Flow
For 850sccm, pressure is 15pa, and power is 620W, and the time is 420s.
Remaining is with embodiment 1.
Embodiment 4：
A kind of be applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem, be made up of the following step：The
One step：Alkali polishes；Second step：Dry method making herbs into wool；
The concrete technology step of alkali polishing：1st step：In groove-type cleaning machine, configuration concentration is 15% NaOH solution；2nd
Step：This NaOH solution is heated to 60 DEG C；3rd step：To react in the class monocrystalline silicon piece immersion NaOH solution of certain poly-region
120 seconds.
The concrete technology step of dry method making herbs into wool：1st step：Using etching SF in dry method wool-weaving machine6Gas is in 1200W power
Under the conditions of form flat matte in silicon chip surface；Gas flow is 330sccm, and pressure is 20pa, and the time is 60s；2nd step：
Form sharp suede structure using etching gas in silicon chip surface reaction, gas is Cl2、O2、SF6, flow is respectively
160sccm, 460sccm, 520sccm, pressure is 10pa, and power is 800W, and the time is 410s；3rd step：Excellent using etching gas
Change suede structure；Gas is Cl2、O2、SF6, flow respectively 120sccm, 160sccm, 680sccm, pressure is 20pa, power
For 1600W, the time is 180s；4th step：Lead to oxygen in reaction intracavity and form oxide film protection layer, O in silicon chip surface2Flow is
860sccm, pressure is 15pa, and power is 560W, and the time is 420s.
Remaining is with embodiment 1.
Embodiment 5：
A kind of be applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem, be made up of the following step：The
One step：Alkali polishes；Second step：Dry method making herbs into wool；
The concrete technology step of alkali polishing：1st step：In groove-type cleaning machine, configuration concentration is 9% NaOH solution；2nd
Step：This NaOH solution is heated to 68 DEG C；3rd step：To react in the class monocrystalline silicon piece immersion NaOH solution of certain poly-region
135 seconds.
The concrete technology step of dry method making herbs into wool：1st step：Using etching SF in dry method wool-weaving machine6Gas is in 950W power
Under the conditions of form flat matte in silicon chip surface；Gas flow is 300sccm, and pressure is 20pa, and the time is 60s；2nd step：
Form sharp suede structure using etching gas in silicon chip surface reaction, gas is Cl2、SF6, flow respectively 210sccm,
580sccm, pressure is 10pa, and power is 950W, and the time is 410s；3rd step：Optimize suede structure using etching gas；Gas
For Cl2、SF6, flow respectively 102sccm, 620sccm, pressure is 20pa, and power is 1900W, and the time is 180s；4th step：
Lead to oxygen in reaction intracavity and form oxide film protection layer, O in silicon chip surface2Flow is 770sccm, and pressure is 15pa, and power is
600W, the time is 420s.
Remaining is with embodiment 1.
Embodiment 6：
A kind of be applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem, be made up of the following step：The
One step：Alkali polishes；Second step：Dry method making herbs into wool；
The concrete technology step of alkali polishing：1st step：In groove-type cleaning machine, configuration concentration is 11% KOH solution；2nd
Step：This KOH solution is heated to 67 DEG C；3rd step：140 will be reacted in the class monocrystalline silicon piece immersion KOH solution of certain poly-region
Second.
The concrete technology step of dry method making herbs into wool：1st step：Using etching SF in dry method wool-weaving machine6Gas is in 1100W power
Under the conditions of form flat matte in silicon chip surface；Gas flow is 315sccm, and pressure is 20pa, and the time is 60s；2nd step：
Form sharp suede structure using etching gas in silicon chip surface reaction, gas is Cl2、O2、SF6, flow is respectively
190sccm, 420sccm, 580sccm, pressure is 10pa, and power is 980W, and the time is 410s；3rd step：Excellent using etching gas
Change suede structure；Gas is Cl2、O2、SF6, flow respectively 98sccm, 210sccm, 620sccm, pressure is 20pa, power
For 2000W, the time is 180s；4th step：Lead to oxygen in reaction intracavity and form oxide film protection layer, O in silicon chip surface2Flow is
830sccm, pressure is 15pa, and power is 610W, and the time is 420s.
Remaining is with embodiment 1.
Comparative example 1：
Process for etching before optimization：Conventional groove cleaning machine alkali formula making herbs into wool
1st step：It is cleaned by ultrasonic：Just join NaOH 250g, H2O2 12L, H2O 65L cleanout fluid, design temperature in No. 1 groove
For 60 DEG C, under certain supersonic frequency, silicon chip is carried out, and during constantly fill into a certain amount of NaOH and H2O2；
2nd step：Making herbs into wool：Just join NaOH 3500g, isopropanol 8L, H2O 75L Woolen-making liquid in No. 2 grooves, design temperature is
80 DEG C carry out making herbs into wool；
3rd step：Pickling：Join HF, each 20L of HCl solution, H2O 45L in No. 3 grooves, under room temperature, the silicon chip after making herbs into wool is entered
Row pickling, dries after pickling.
Monocrystalline after making herbs into wool and after plated film/poly-region reflectance contrast situation
Above it can be seen that class monocrystalline is after dry method making herbs into wool, crystal region and poly-region reflectance have and significantly lower,
Especially poly-region reflectance reduction is particularly evident, and crystal region and poly-region difference in reflectivity reduce simultaneously；Class monocrystalline
After PECVD plated film, the crystal region of new technology and poly-region reflectance are relatively low, are conducive to the lifting of photoelectric transformation efficiency outstanding
It is the increase of short circuit current；Crystal region is almost consistent with poly-region reflectance simultaneously.
Class monocrystalline solar cell unit for electrical property parameters after improvement：
By optimizing class monocrystalline process for etching route, the crystal region of new technology and poly-region reflectance are relatively low, favorably
In the increase of the lifting especially short circuit current of class monocrystalline photoelectric conversion efficiency of the solar battery, while appearance chromatic difference problem is improved
Battery efficiency has 0.1% about lifting.
Claims (2)
1. a kind of be applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem, it is characterized by：By the following step
Composition：The first step：Alkali polishes；Second step：Dry method making herbs into wool；
The concrete technology step of alkali polishing：1st step：In groove-type cleaning machine, configuration concentration is the NaOH solution of 8-12%；2nd step：
This NaOH solution is heated to 65-75 DEG C；3rd step：To react in the class monocrystalline silicon piece immersion NaOH solution of certain poly-region
The 130-150 second；
The concrete technology step of dry method making herbs into wool：1st step：Using etching SF in dry method wool-weaving machine6Gas is in 900-1100W power
Under the conditions of form flat matte in silicon chip surface；Gas flow is 300-320sccm, and pressure is 20pa, and the time is 60s；2nd
Step：Form sharp suede structure using etching gas in silicon chip surface reaction, gas is Cl2、O2、SF6, flow is respectively
180-220sccm, 350-450sccm, 550-650sccm, pressure is 10pa, and power is 900-1100W, and the time is 410s；3rd
Step：Optimize suede structure using etching gas；Gas is Cl2、O2、SF6, flow respectively 90-110sccm, 180-
220sccm, 550-650sccm, pressure is 20pa, and power is 1800-2200W, and the time is 180s；4th step：Lead in reaction intracavity
Oxygen forms oxide film protection layer, O in silicon chip surface2Flow is 750-850sccm, and pressure is 15pa, and power is 580-620W,
Time is 420s.
2. a kind of as claimed in claim 1 be applied to the process for etching improving class monocrystalline solar cell appearance chromatic difference problem, its
It is characterized as：It is made up of the following step：The first step：Alkali polishes；Second step：Dry method making herbs into wool；
The concrete technology step of alkali polishing：1st step：In groove-type cleaning machine, configuration concentration is 10% NaOH solution；2nd step：Will
This NaOH solution is heated to 70 DEG C；3rd step：To react 140 seconds in the class monocrystalline silicon piece immersion NaOH solution of certain poly-region；
The concrete technology step of dry method making herbs into wool：1st step：Using etching SF in dry method wool-weaving machine6Gas is in 1000W power condition
Under form flat matte in silicon chip surface；Gas flow is 310sccm, and pressure is 20pa, and the time is 60s；2nd step：Using
Etching gas form sharp suede structure in silicon chip surface reaction, and gas is Cl2、O2、SF6, flow respectively 200sccm,
400sccm, 600sccm, pressure is 10pa, and power is 1000W, and the time is 410s；3rd step：Optimize matte using etching gas
Structure；Gas is Cl2、O2、SF6, flow respectively 100sccm, 200sccm, 600sccm, pressure is 20pa, and power is
2000W, the time is 180s；4th step：Lead to oxygen in reaction intracavity and form oxide film protection layer, O in silicon chip surface2Flow is
800sccm, pressure is 15pa, and power is 600W, and the time is 420s.
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| CN103643304A (en) * | 2013-12-18 | 2014-03-19 | 上饶光电高科技有限公司 | Method for activating polysilicon texturing liquid medicine |
| CN103746044A (en) * | 2014-01-29 | 2014-04-23 | 北京七星华创电子股份有限公司 | Preparation method of single crystalline silicon solar cell with back polished structure |
| CN107681011A (en) * | 2017-09-15 | 2018-02-09 | 张家港协鑫集成科技有限公司 | The etching method and application of class monocrystalline silicon piece texture structure and suede structure |
| CN108735859A (en) * | 2018-05-30 | 2018-11-02 | 淮阴师范学院 | Photovoltaic device making Nano surface dry method making herbs into wool preparation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201408748Y (en) * | 2008-11-04 | 2010-02-17 | 西安工业大学 | Silicon deep slot structure with depth-to-width ratio |
| CN102468371A (en) * | 2011-12-15 | 2012-05-23 | 江苏腾晖电力科技有限公司 | Texturing method of quasi-single crystal silicon wafer |
| CN102534622A (en) * | 2012-03-20 | 2012-07-04 | 常州比太科技有限公司 | Method for forming solar dry textured black silicon by plasma excitation |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201408748Y (en) * | 2008-11-04 | 2010-02-17 | 西安工业大学 | Silicon deep slot structure with depth-to-width ratio |
| CN102468371A (en) * | 2011-12-15 | 2012-05-23 | 江苏腾晖电力科技有限公司 | Texturing method of quasi-single crystal silicon wafer |
| CN102534622A (en) * | 2012-03-20 | 2012-07-04 | 常州比太科技有限公司 | Method for forming solar dry textured black silicon by plasma excitation |
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