CN201099698Y - Ternary airflow metallorganic chemical vapour deposition equipment reaction cavity - Google Patents
Ternary airflow metallorganic chemical vapour deposition equipment reaction cavity Download PDFInfo
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- CN201099698Y CN201099698Y CNU2007200737475U CN200720073747U CN201099698Y CN 201099698 Y CN201099698 Y CN 201099698Y CN U2007200737475 U CNU2007200737475 U CN U2007200737475U CN 200720073747 U CN200720073747 U CN 200720073747U CN 201099698 Y CN201099698 Y CN 201099698Y
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Abstract
A triple airflow metal organic chemical gas phase sedimentation device reaction chamber mainly comprises a reaction gas feeding pipe, a compression gas feeding pipe, a spray nozzle, a cooling chamber, a carrier disk, a reaction chamber and a heater. The utility model is characterized in that the reaction gas A feeding pipe is connected with the top of the reaction chamber, while the carrier disk is arranged below, the upper of the carrier disk is provided with the spray nozzle and the cooling chamber, the compression gas P feeding pipe and the reaction gas B feeding pipe are coaxially covered on the outer wall of the reaction gas A feeding pipe, and the outlet of the compression gas P feeding pipe is above the reaction gas A outlet, and the outlet of the reaction gas B is at the top of a buffer chamber. The triple airflow metal organic chemical gas phase sedimentation device reaction chamber has the advantages that the utility model utilizes an airflow field of combined horizontal flow and vertical spray to restrain the local turbulence caused by the rebound and reflux of spray gas to improve the distribution uniformity of reaction gas and resolve the washing problem of attached particles, with simple structure, easy production and expansibility.
Description
Technical field
The utility model relates to a kind of vapor deposition apparatus, particularly a kind of triple air-flow metal organic substance chemical gaseous phase deposition device reaction cavity bodies.
Background technology
Metal-organic chemical vapor deposition equipment (MOCVD) technology collection precision optical machinery, semiconductor material, vacuum electronic, hydromeehanics, optics, chemistry, computer is multidisciplinary is one, be a kind of level of automation height, cost an arm and a leg, high-end semiconductor material, photoelectron specific equipment that the technology integrated level is high.MOCVD is a kind of non-equilibrium growing technology, and its working mechanism is by the source gas transmission, makes III family alkylate (TMGa, TMIn, TMAl, two luxuriant magnesium etc.) and the hydride (AsH of V family
3, PH
3, NH
3Deng) carry out heat scission reaction on the substrate in reaction chamber.Growth velocity with regard to epitaxial material is more moderate, can more accurately control thickness.Its component and growth velocity are by the source flux decision of the air-flow of various heterogeneities and accurately control.MOCVD is as the epitaxially grown Perfected process of compound semiconductor materials; have quality height, good stability, good reproducibility, technology flexibly, can the mass-producing volume production etc. characteristics; become industry and produced the key core equipment of semiconductor photoelectric device and microwave device, had broad application prospects and industrialization value.
Reaction cavity is the most crucial part of whole M OCVD equipment, has determined the performance of entire equipment.And the geometry of cavity and size are the primary factor that influences deposition properties because its directly influence gas in the chamber intravital flow behavior, and the transporting and diffusion way of reactant gases.
Because above-mentioned background, seeking a kind of more outstanding gas delivery scheme is that each research institution and equipment design manufacturers are being explored always.Existing two kinds of typical designs, a kind of is planetary reaction chamber, and another kind is the spray-type reaction chamber, and the both has advantage separately, but its cavity design institute inherent shortcoming is also arranged.
Summary of the invention
The purpose of this utility model is at the defective that exists in the prior art, and the utility model provides a kind of triple air-flow metal organic substance chemical gaseous phase deposition device reaction cavity body.
Principle of work of the present utility model: after reactant gases A enters reaction chamber from the center intake ducting, along continuous straight runs radial flow in reaction chamber.The P that calms the anger enters reaction chamber from the outer layer sleeve of central intake pipe, is positioned at the top along continuous straight runs radial flow of reactant gases A.Reactant gases B enters cushion chamber from another intake ducting, vertically enters reaction chamber via mouth spray then, is blended in side reactor on the substrate with reactant gases A.Because the drive of horizontal gas flow, the bounce-back that has weakened vertical spray air-flow greatly refluxes, calm the anger simultaneously P also effectively inhibited reaction gas in reaction chamber, form hot eddy current.
Horizontal laminar flow and vertically the air velocity distribution that combines of spray suppressed the local turbulence that the bounce-back of spray gas refluxes and causes, so not only improved the homogeneity that reactant gases distributes, solved the cleaning problem that particle adheres to, the while also makes growth interface more precipitous.
The utility model mainly comprises: reactant gases A intake ducting (1), the P intake ducting (2) of calming the anger, reactant gases B intake ducting (3), mouth spray (4), cooling chamber (5), slide glass dish (6), reaction chamber (8), venting port (9), cushion chamber (10), cooling liquid inlet (11), cooling liquid outlet (12), shell cavity (13), well heater (15), it is characterized in that described reactant gases A intake ducting (1) inserts from reaction chamber (8) top, its below is provided with slide glass dish (6), the top of slide glass dish (6) is provided with mouth spray (4) and cooling chamber (5), calm the anger on the coaxial outer wall that is wrapped in reactant gases A intake ducting (1) of P intake ducting (2) and the intake ducting (3) of reactant gases B, the outlet of P intake ducting (2) of calming the anger is positioned at the top of reactant gases A outlet, the axis of its outlet is parallel with slide glass dish (6), the outlet of reactant gases B is positioned at the top of cushion chamber (10), the periphery of its central axis, cooling liquid inlet (11) passes shell cavity (13) with cooling liquid outlet (12), two ends with cooling chamber (5) are connected respectively, cooling chamber (5) is installed between reaction chamber (8) and the cushion chamber (10), slide glass dish (6) bottom is provided with well heater (15), and venting port (9) is positioned at the bottom of reaction chamber (8).The utility model has the advantages that the reaction cavity structure that adopts horizontal laminar flow and vertically spray the air velocity distribution that combines, suppressed the local turbulence that the bounce-back of spray gas refluxes and causes, improve the homogeneity that reactant gases distributes, solved the cleaning problem that particle adheres to, the structure of reaction cavity has been simplified the structure and the manufacture difficulty of reaction cavity under the prerequisite that guarantees high quality epitaxial growth, and has extensibility.
Description of drawings
Fig. 1 reaction cavity structure 1 synoptic diagram of the present utility model;
Fig. 2 reaction cavity structure 2 synoptic diagram of the present utility model.
1 reactant gases A intake ducting, 2 calm the anger P intake ducting, 3 reactant gases B intake ductings, 4 mouth sprays, 5 cooling chambers, 6 slide glass dishes, 7 substrates, 8 reaction chambers, 9 venting ports, 10 cushion chambers, 11 cooling liquid inlets, 12 cooling liquid outlets, 13 shell cavities, 14 cushion chamber baffle plates, 15 well heaters
Embodiment
Further specify the embodiment of utility model below in conjunction with accompanying drawing:
Referring to Fig. 1, reactant gases A intake ducting 1 inserts from reaction chamber 8 tops, and reactant gases A enters reaction chamber 8 from intake ducting 1, the along continuous straight runs radial flow.The outlet below of reactant gases A intake ducting 1 is equipped with slide glass dish 6, and the upper surface of slide glass dish 6 is provided with substrate 7, and the height of slide glass dish 6 can be according to the up-down adjustment that requires of material epitaxy growth technique, and slide glass dish 6 can be made as fixed mode or rotary-type mode.The intake ducting 3 of P intake ducting 2 and reactant gases B of calming the anger is coaxial to be wrapped on the outer wall of reactant gases A intake ducting 1, the outlet of P intake ducting 2 of calming the anger is positioned at the top of reactant gases A outlet, the axis that the P intake ducting 2 of calming the anger exports is parallel with slide glass dish 6, the P that calms the anger enters reaction chamber from the outer layer sleeve of central intake pipe, is positioned at the top along continuous straight runs radial flow of reactant gases A.The outlet of reactant gases B is positioned at the top of cushion chamber 10, it is the periphery of cushion chamber 10 central axis, mouth spray 4 is equipped with on the top of slide glass dish 6, mouth spray 4 is perpendicular to slide glass dish 6, mouth spray be shaped as hole or slit, the quantity of mouth spray is 20～200, mouth spray is circle distribution or array distribution or distribution, mouth spray is parallel with the top of reaction chamber 8 or protrude in the top of reaction chamber 8, reactant gases B enters cushion chamber from reactant gases B intake ducting 3, vertically enter reaction chamber 8 via mouth spray 4 then, with reactant gases A hybrid reaction above substrate 7.The centre of cushion chamber 10 can be provided with a cushion chamber baffle plate 14 according to design requirements, changes the flow pattern that reactant gases B enters mouth spray 4 with this, referring to Fig. 2.Cooling chamber 5 is installed between reaction chamber 8 and the cushion chamber 10, cooling liquid inlet 11 passes shell cavity 13 with cooling liquid outlet 12 and is connected with the two ends of cooling chamber 5 respectively, well heater 15 is equipped with in slide glass dish 6 bottoms, well heater 15 is the resistive heating mode or adopts the radio-frequency induction heater heating that venting port 9 is located at the bottom of reaction chamber 8.
Claims (5)
1. triple air-flow metal organic substance chemical gaseous phase deposition device reaction cavity body, mainly comprise: reactant gases A intake ducting (1), the P intake ducting (2) of calming the anger, reactant gases B intake ducting (3), mouth spray (4), cooling chamber (5), slide glass dish (6), reaction chamber (8), venting port (9), cushion chamber (10), cooling liquid inlet (11), cooling liquid outlet (12), shell cavity (13), well heater (15), it is characterized in that described reactant gases A intake ducting (1) inserts from reaction chamber (8) top, its below is provided with slide glass dish (6), the top of slide glass dish (6) is provided with mouth spray (4) and cooling chamber (5), calm the anger on the coaxial outer wall that is wrapped in reactant gases A intake ducting (1) of P intake ducting (2) and the intake ducting (3) of reactant gases B, the outlet of P intake ducting (2) of calming the anger is positioned at the top of reactant gases A outlet, the axis of its outlet is parallel with slide glass dish (6), the outlet of reactant gases B is positioned at the top of cushion chamber (10), the periphery of its central axis, cooling liquid inlet (11) passes shell cavity (13) with cooling liquid outlet (12), two ends with cooling chamber (5) are connected respectively, cooling chamber (5) is installed between reaction chamber (8) and the cushion chamber (10), slide glass dish (6) bottom is provided with well heater (15), and venting port (9) is positioned at the bottom of reaction chamber (8).
2. triple air-flow metal organic substance chemical gaseous phase deposition device reaction cavity body according to claim 1 is characterized in that the centre of described cushion chamber (10) is provided with cushion chamber baffle plate (14).
3. triple air-flow metal organic substance chemical gaseous phase deposition device reaction cavity body according to claim 1, it is characterized in that described mouth spray (4) is perpendicular to slide glass dish (6), mouth spray be shaped as hole or slit, mouth spray is circle distribution or array distribution or distribution, and mouth spray is parallel with the top of reaction chamber (8) or protrude in the top of reaction chamber (8).
4. triple air-flow metal organic substance chemical gaseous phase deposition device reaction cavity body according to claim 1, the upper surface that it is characterized in that described slide glass dish (6) is provided with substrate (7), the height of slide glass dish (6) is adjustable, and slide glass dish (6) is set to fixed mode or rotary-type mode.
5. triple air-flow metal organic substance chemical gaseous phase deposition device reaction cavity body according to claim 1 is characterized in that described well heater (15) is resistive heating mode or radio-frequency induction type of heating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200737475U CN201099698Y (en) | 2007-08-17 | 2007-08-17 | Ternary airflow metallorganic chemical vapour deposition equipment reaction cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200737475U CN201099698Y (en) | 2007-08-17 | 2007-08-17 | Ternary airflow metallorganic chemical vapour deposition equipment reaction cavity |
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| Publication Number | Publication Date |
|---|---|
| CN201099698Y true CN201099698Y (en) | 2008-08-13 |
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| CNU2007200737475U Expired - Lifetime CN201099698Y (en) | 2007-08-17 | 2007-08-17 | Ternary airflow metallorganic chemical vapour deposition equipment reaction cavity |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102001650A (en) * | 2010-12-28 | 2011-04-06 | 上海师范大学 | Method for preparing graphene through chemical vapor deposition under cold cavity wall condition |
| CN102021530A (en) * | 2009-09-11 | 2011-04-20 | 甘志银 | Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment |
| CN101736307B (en) * | 2008-11-24 | 2012-01-18 | 中芯国际集成电路制造(北京)有限公司 | Plasma vapor deposition method |
| CN102766852A (en) * | 2011-05-04 | 2012-11-07 | 广东量晶光电科技有限公司 | MOCVD reactor |
| WO2013075390A1 (en) * | 2011-11-23 | 2013-05-30 | Gan Zhiyin | Hydride vapor phase epitaxy device |
| CN103320852A (en) * | 2013-06-14 | 2013-09-25 | 光垒光电科技（上海）有限公司 | Reaction cavity used for epitaxial deposition |
| CN103320865A (en) * | 2013-06-21 | 2013-09-25 | 光垒光电科技（上海）有限公司 | Shower head and vapor deposition equipment |
| CN103603038A (en) * | 2013-12-10 | 2014-02-26 | 吉林大学 | Photo-assisted MOCVD (metal-organic chemical vapor deposition) reactor with horizontal porous spray device |
| CN105256369A (en) * | 2015-10-20 | 2016-01-20 | 中国电子科技集团公司第四十八研究所 | High-temperature-resistant horizontal multi-layer gas inlet device for SiC epitaxy |
| CN105970188A (en) * | 2016-07-11 | 2016-09-28 | 中山德华芯片技术有限公司 | Gas feeding structure of rotating disc type MOCVD (Metalorganic Chemical Vapor Deposition) reaction chamber |
| CN107366014A (en) * | 2016-04-19 | 2017-11-21 | 纽富来科技股份有限公司 | Shower nozzle, epitaxially growing equipment and method of vapor-phase growing |
| CN110662858A (en) * | 2017-02-02 | 2020-01-07 | 弗谢沃洛德·弗拉基米罗维奇·龙丁 | Method for feeding gases into a reactor for growing epitaxial structures based on group III metal nitrides, and device for implementing the method |
| CN111304594A (en) * | 2020-04-23 | 2020-06-19 | 苏州迈正科技有限公司 | Vacuum device and vacuum coating equipment |
| CN115537769A (en) * | 2022-12-01 | 2022-12-30 | 浙江晶越半导体有限公司 | Chemical vapor deposition method and reactor for silicon carbide |
| CN115537765A (en) * | 2022-09-27 | 2022-12-30 | 盛吉盛(宁波)半导体科技有限公司 | Plasma chemical vapor deposition device and small-size groove filling method |
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2007
- 2007-08-17 CN CNU2007200737475U patent/CN201099698Y/en not_active Expired - Lifetime
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101736307B (en) * | 2008-11-24 | 2012-01-18 | 中芯国际集成电路制造(北京)有限公司 | Plasma vapor deposition method |
| CN102021530A (en) * | 2009-09-11 | 2011-04-20 | 甘志银 | Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment |
| CN102001650A (en) * | 2010-12-28 | 2011-04-06 | 上海师范大学 | Method for preparing graphene through chemical vapor deposition under cold cavity wall condition |
| CN102001650B (en) * | 2010-12-28 | 2013-05-29 | 上海师范大学 | Method for preparing graphene through chemical vapor deposition under cold cavity wall condition |
| CN102766852A (en) * | 2011-05-04 | 2012-11-07 | 广东量晶光电科技有限公司 | MOCVD reactor |
| WO2013075390A1 (en) * | 2011-11-23 | 2013-05-30 | Gan Zhiyin | Hydride vapor phase epitaxy device |
| CN103320852A (en) * | 2013-06-14 | 2013-09-25 | 光垒光电科技（上海）有限公司 | Reaction cavity used for epitaxial deposition |
| CN103320865A (en) * | 2013-06-21 | 2013-09-25 | 光垒光电科技（上海）有限公司 | Shower head and vapor deposition equipment |
| CN103603038B (en) * | 2013-12-10 | 2016-06-22 | 吉林大学 | There is the light auxiliary MOCVD reactor of horizontal porous spray equipment |
| CN103603038A (en) * | 2013-12-10 | 2014-02-26 | 吉林大学 | Photo-assisted MOCVD (metal-organic chemical vapor deposition) reactor with horizontal porous spray device |
| CN105256369A (en) * | 2015-10-20 | 2016-01-20 | 中国电子科技集团公司第四十八研究所 | High-temperature-resistant horizontal multi-layer gas inlet device for SiC epitaxy |
| CN107366014A (en) * | 2016-04-19 | 2017-11-21 | 纽富来科技股份有限公司 | Shower nozzle, epitaxially growing equipment and method of vapor-phase growing |
| US10920317B2 (en) | 2016-04-19 | 2021-02-16 | Nuflare Technology, Inc. | Shower head, vapor phase growth apparatus and vapor phase growth method |
| CN107366014B (en) * | 2016-04-19 | 2022-05-27 | 纽富来科技股份有限公司 | Shower head, vapor phase growth apparatus, and vapor phase growth method |
| CN105970188A (en) * | 2016-07-11 | 2016-09-28 | 中山德华芯片技术有限公司 | Gas feeding structure of rotating disc type MOCVD (Metalorganic Chemical Vapor Deposition) reaction chamber |
| CN110662858A (en) * | 2017-02-02 | 2020-01-07 | 弗谢沃洛德·弗拉基米罗维奇·龙丁 | Method for feeding gases into a reactor for growing epitaxial structures based on group III metal nitrides, and device for implementing the method |
| CN110662858B (en) * | 2017-02-02 | 2021-10-08 | 弗谢沃洛德·弗拉基米罗维奇·龙丁 | Method for supplying gases to grow epitaxial structures based on group III metal nitrides |
| CN111304594A (en) * | 2020-04-23 | 2020-06-19 | 苏州迈正科技有限公司 | Vacuum device and vacuum coating equipment |
| CN115537765A (en) * | 2022-09-27 | 2022-12-30 | 盛吉盛(宁波)半导体科技有限公司 | Plasma chemical vapor deposition device and small-size groove filling method |
| CN115537769A (en) * | 2022-12-01 | 2022-12-30 | 浙江晶越半导体有限公司 | Chemical vapor deposition method and reactor for silicon carbide |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: GUANGDONG ZHAOXIN SEMICONDUCTOR EQUIPMENT MANUFACT Free format text: FORMER OWNER: GAN ZHIYIN Effective date: 20091023 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20091023 Address after: Guangdong province Foshan City Nanhai Pingzhou Shawei Industrial Avenue South West of the first floor of building C building, zip code: 528251 Patentee after: Guangdong RealFaith Semiconductor Equipment Co., Ltd. Address before: Hubei city of Wuhan province Luo Yu Road, No. 1037 Wuhan National Laboratory for optoelectronics Huazhong University of Science and Technology F101, zip code: 430074 Patentee before: Gan Zhiyin |
|
| CX01 | Expiry of patent term |
Granted publication date: 20080813 |
|
| CX01 | Expiry of patent term |