CN105970188A - Gas feeding structure of rotating disc type MOCVD (Metalorganic Chemical Vapor Deposition) reaction chamber - Google Patents
Gas feeding structure of rotating disc type MOCVD (Metalorganic Chemical Vapor Deposition) reaction chamber Download PDFInfo
- Publication number
- CN105970188A CN105970188A CN201610550305.9A CN201610550305A CN105970188A CN 105970188 A CN105970188 A CN 105970188A CN 201610550305 A CN201610550305 A CN 201610550305A CN 105970188 A CN105970188 A CN 105970188A
- Authority
- CN
- China
- Prior art keywords
- gas
- pallet
- swing arm
- mocvd
- magnetic fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a gas feeding structure of a rotating disc type MOCVD (Metalorganic Chemical Vapor Deposition) reaction chamber. The gas feeding structure comprises a gas charging top plate, magnetofluid drivers and two L-shaped swinging arms, wherein the gas charging top plate is mounted on the top part of the MOCVD reaction chamber in a sealing manner; the two L-shaped swing arms are symmetrically mounted on the gas charging top plate through corresponding magnetofluid drivers; one right-angle side of each mounted L-shaped swinging arm passes through the gas charging top plate and the corresponding magnetofluid driver and is vertical to a tray, and the other right-angle side of each mounted L-shaped swinging arm is positioned in the MOCVD reaction chamber and parallel to the tray; the other right-angle side of each mounted L-shaped swinging arm is positioned above the tray; reaction gas charging channels are arranged in the L-shaped swinging arms; one end of each reaction gas charging channel is used as a gas feeding end while the other end of each reaction gas charging channel is used as a gas discharging end; the gas feeding ends sequentially pass through the gas charging top plate and the magnetofluid drivers and then are connected to a reaction gas supplying source. With the adoption of the gas feeding structure, reaction gas can be uniformly fed to each position on the surface of a substrate, and thus semiconductor compound membranes which are consistent in component and consistent in thickness can be deposited on the substrate.
Description
Technical field
The present invention relates to the technical field of semiconductor manufacturing facility MOCVD reative cell, refer in particular to a kind of rotation
Turn the air intake structure of disc type MOCVD reative cell.
Background technology
MOCVD (metal organic vapors chemical deposition) technology has become the Main Means that semi-conducting material manufactures,
MOCVD device by II or III race's metallo-organic compound and VI or the hydride of group Ⅴ element mix mutually after be passed through
Reative cell, mixed gas flows through the substrate surface of heating, goes forward side by side circulation of qi promoting at substrate surface generation pyrolysis
Phase epitaxy.
Chemical gas-phase deposition system is used for processing the substrate of such as semiconductor crystal wafer.There is a kind of rotating circular disk
The reactor of formula.This reactor comprises a reaction chamber body and has disc shaped platen to be placed in reative cell.Substrate
Can be positioned on pallet, and can rotate around tray center with pallet.It is referred to as gas distributor or gas
The parts of injection head are also mounted at inside reaction chamber body.One gas injection head generally comprises several reaction gas
Air inlet.Multiple reative cell gas introduces and because the guiding of rotary-tray is around pallet direction of rotation from this gas head
Flowing, and thus cover whole substrate top surface.
Along with reacting gas covers to whole substrate surface, by absorption, chemical combination, nucleation, life on substrate surface
Long also depositional coating.This technique can be used for depositing the semiconducting compound film layer of different component.Multilamellar III-V
Race's semi-conducting material such as gallium nitride, indium nitride, GaAs, can being deposited on of indium phosphide and gallium antimonide etc
On substrate and then be used for manufacturing diode, transistor and and other photoelectric device.
But the little difference of the attribute in deposition multilamellar, obtained device performance can be had a deep effect on.
These attributes affecting performance include the thickness of depositional coating, component, doped source and impurity concentration, crystalline
Amount is precipitous with atomic interface.In order to obtain uniform depositional coating.
Prior art develops a lot of apparatus and method for improving the uniformity of depositional coating.Wherein substrate around
The rotary motion of pallet can make the even film layer on substrate table table circumferential position.In order to improve substrate radial position
Membrane uniformity.The gas handling system of existing MOCVD reative cell is usually and reaction gas is divided into several region.
The most along the circumferential direction being divided into 6 admittance area, gaseous species and charge flow rate in each region can be single
Solely regulation and control.In so can ensure that each circumference admittance area, corresponding substrate surface obtains more consistent reaction
Gas.But still suffer from the difference of air inlet situation between region.Therefore, it is necessary for further improving
's.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art and shortcoming, propose a kind of rotation the most reliably
The air intake structure of disc type MOCVD reative cell, can make substrate surface position by this air intake structure
The uniform reacting gas obtained, thus promote the quasiconductor chemical combination that substrate deposition component is consistent, thickness is consistent
Thing film.
For achieving the above object, technical scheme provided by the present invention is: a kind of rotary disc-type MOCVD
The air intake structure of reative cell, includes gas and injects top board, magnetic fluid driver, L-type swing arm；Described gas
Injecting top plate seal and be arranged on the top of MOCVD reative cell, described L-type swing arm has two, passes through respectively
Respective magnetic fluid driver is symmetrically mounted on gas and injects on top board, and described magnetic fluid driver is fixed
Inject the upper surface of top board in gas, after installation, a right-angle side of described L-type swing arm injects top board through gas
With magnetic fluid driver, and being perpendicular to the pallet in MOCVD reative cell, another right-angle side is positioned at MOCVD
In reative cell and parallel with pallet, and it is in above pallet, described L-type swing arm is in magnetic fluid driver
Can rotate in set point around the axis being perpendicular to pallet under driving；It is provided with reaction gas in described L-type swing arm
Body injection channel, its one end is inlet end, and the other end is outlet side, and described inlet end sequentially passes through gas note
Accessing reaction gas air supply source after entering top board and magnetic fluid driver, the gas outlet of described outlet side is downwardly held in the palm
Dish.
The most separate two in reacting gas injection channel in described L-type swing arm, and all of instead
Answer gas injection channel eventually to collect in the outlet side of L-type swing arm, be formed in described outlet side collect logical
Road, sprays through gas outlet after mixing the reaction gas in all reacting gas injection channels again.
Described gas injects top board and the same centrage of pallet.
The present invention compared with prior art, has the advantage that and beneficial effect:
The air intake structure of the present invention can make wafer surface obtain homogeneous reaction gas, makes wafer surface obtain
The chemical vapor deposition films of uniformity.Specifically, pallet with certain rotation speed around the rotation being perpendicular to pallet
Rotating shaft rotates, and two L-type swing arms simultaneously swing with certain speed rotating around other rotary shaft, L-type swing arm
There is gas outlet one end, the reaction gas of different component can inject the surface of wafer, coordinate rate of discharge simultaneously
Regulation, it is possible to make the wafer on each position of pallet obtain uniform reacting gas supply.
Accompanying drawing explanation
Fig. 1 is the structure diagram of rotary disc-type MOCVD reative cell.
Fig. 2 is the top view that gas of the present invention injects top board.
Fig. 3 is the A-A sectional view of Fig. 2.
Fig. 4 is the outlet side sectional view of L-type swing arm of the present invention.
Detailed description of the invention
Below in conjunction with specific embodiment, the invention will be further described.
As it is shown in figure 1, described rotary disc-type MOCVD reative cell include reaction chamber 10, air intake structure,
Pallet 2, heating plate 3, magnetic fluid rotary shaft 4, air vent 5, driving motor 6.Described pallet 2 includes
Multiple cavitys 8 that can bear wafer 7, pallet 2 is heated sheet 3 and heats.Pallet 2 is arranged on a tool
Having in the vertical magnetic fluid rotary shaft 4 of rotation axis 9, magnetic fluid rotary shaft 4 is driven by driving motor 6
Rotate.Wafer 7 upper surface of reaction to be deposited is the most right with reaction chamber 10 top.Drive motor 6
Can ensure that pallet 2 and wafer 7 rotate around rotation axis 9 with rotary speed β, this rotation
Speed β is generally between 50r/min to 2000r/min.There is below reaction chamber a chassis, chassis is opened
There is air vent 5, reacted waste gas can be discharged.
As shown in Figures 2 to 4, described air intake structure includes gas and injects top board 101, magnetic fluid driving
Device 102, L-type swing arm 103；Described gas injects top board 101 and is sealingly mounted at the top of reaction chamber 10, should
Gas injects top board 101 and the same centrage of pallet 2, and described L-type swing arm 103 has two, passes through respectively
Respective magnetic fluid driver 102 is symmetrically mounted on gas and injects on top board 101, and described magnetic fluid drives
Dynamic device 102 is fixed on gas and injects the upper surface of top board 101, and after installation, described L-type swing arm 103 is always
The arm of angle injects top board 101 and magnetic fluid driver 102 through gas, and is perpendicular to pallet 2, another right-angle side
Being positioned at reaction chamber, and parallel with pallet 2, and be in above pallet 2, described L-type swing arm 103 is at magnetic
The driving of fluid driver 102 is lower can rotate within the specific limits around the axis being perpendicular to pallet 2, and track is such as
In Fig. 2 11；At least two independent reacting gas injection channels, energy it is provided with in described L-type swing arm 103
Enough inject different reacting gas as desired, and there the most specifically have two reacting gas to inject to be logical
Road 103-1,103-2, one end of this L-type swing arm 103 is inlet end, and the other end is outlet side, described in enter
Gas end sequentially passes through after gas injects top board 101 and magnetic fluid driver 102 and accesses reaction gas air supply source, institute
State downwardly pallet 2, gas outlet of outlet side, and all of reacting gas injection channel is eventually put in L-type
The outlet side of arm 103 is collected, and is formed with collection channel 103-3 in described outlet side, is used for mixing and is responded
Spray through gas outlet again after gas.
During work, pallet 2 rotates with certain rotation speed, and two L-type swing arms 103 are rotating around other simultaneously
Rotary shaft swings with certain speed, the reaction gas of different component can inject the surface of wafer, coordinate outlet
The regulation of flow, it is possible to make the wafer on each position of pallet 2 obtain uniform reacting gas supply.
The examples of implementation of the above are only the preferred embodiments of the invention, not limit the reality of the present invention with this
Execute scope, therefore the change that all shapes according to the present invention, principle are made, the protection model in the present invention all should be contained
In enclosing.
Claims (3)
1. the air intake structure of a rotary disc-type MOCVD reative cell, it is characterised in that: include gas
Inject top board, magnetic fluid driver, L-type swing arm；Described gas injects top plate seal and is arranged on MOCVD
The top of reative cell, described L-type swing arm has two, symmetrical by respective magnetic fluid driver respectively
Being arranged on gas and inject on top board, described magnetic fluid driver is fixed on gas and injects the upper surface of top board, peace
After dress, a right-angle side of described L-type swing arm injects top board and magnetic fluid driver through gas, and is perpendicular to
Pallet in MOCVD reative cell, another right-angle side is positioned at MOCVD reative cell, and parallel with pallet,
And it being in above pallet, described L-type swing arm can be around the axle being perpendicular to pallet under the driving of magnetic fluid driver
Line rotates in set point；Being provided with reacting gas injection channel in described L-type swing arm, its one end is air inlet
End, the other end is outlet side, and described inlet end sequentially passes through gas injection top board and magnetic fluid driver is followed by
Enter reaction gas air supply source, the gas outlet of described outlet side downwardly pallet.
The air intake structure of a kind of rotary disc-type MOCVD reative cell the most according to claim 1, its
It is characterised by: the most separate two in reacting gas injection channel in described L-type swing arm, and institute
Some reacting gas injection channels are eventually collected in the outlet side of L-type swing arm, are formed in described outlet side
Collection channel, sprays through gas outlet after mixing the reaction gas in all reacting gas injection channels again.
The air intake structure of a kind of rotary disc-type MOCVD reative cell the most according to claim 1, its
It is characterised by: described gas injects top board and the same centrage of pallet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610550305.9A CN105970188A (en) | 2016-07-11 | 2016-07-11 | Gas feeding structure of rotating disc type MOCVD (Metalorganic Chemical Vapor Deposition) reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610550305.9A CN105970188A (en) | 2016-07-11 | 2016-07-11 | Gas feeding structure of rotating disc type MOCVD (Metalorganic Chemical Vapor Deposition) reaction chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105970188A true CN105970188A (en) | 2016-09-28 |
Family
ID=56952799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610550305.9A Pending CN105970188A (en) | 2016-07-11 | 2016-07-11 | Gas feeding structure of rotating disc type MOCVD (Metalorganic Chemical Vapor Deposition) reaction chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105970188A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117684156A (en) * | 2024-01-11 | 2024-03-12 | 北京北方华创微电子装备有限公司 | Edge air inlet device, semiconductor process chamber and semiconductor process equipment |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW301014B (en) * | 1995-06-09 | 1997-03-21 | Ebara Corp | |
| CN1693535A (en) * | 2004-04-30 | 2005-11-09 | 周星工程股份有限公司 | Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas |
| CN201099698Y (en) * | 2007-08-17 | 2008-08-13 | 甘志银 | Ternary airflow metallorganic chemical vapour deposition equipment reaction cavity |
| US20090017190A1 (en) * | 2007-07-10 | 2009-01-15 | Veeco Instruments Inc. | Movable injectors in rotating disc gas reactors |
| JP2009010279A (en) * | 2007-06-29 | 2009-01-15 | Samco Inc | Thin film manufacturing device |
| CN101826446A (en) * | 2009-03-04 | 2010-09-08 | 东京毅力科创株式会社 | Film deposition apparatus and film deposition method |
| CN205821451U (en) * | 2016-07-11 | 2016-12-21 | 中山德华芯片技术有限公司 | A kind of air intake structure of rotary disc-type MOCVD reative cell |
-
2016
- 2016-07-11 CN CN201610550305.9A patent/CN105970188A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW301014B (en) * | 1995-06-09 | 1997-03-21 | Ebara Corp | |
| CN1693535A (en) * | 2004-04-30 | 2005-11-09 | 周星工程股份有限公司 | Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas |
| JP2009010279A (en) * | 2007-06-29 | 2009-01-15 | Samco Inc | Thin film manufacturing device |
| US20090017190A1 (en) * | 2007-07-10 | 2009-01-15 | Veeco Instruments Inc. | Movable injectors in rotating disc gas reactors |
| CN201099698Y (en) * | 2007-08-17 | 2008-08-13 | 甘志银 | Ternary airflow metallorganic chemical vapour deposition equipment reaction cavity |
| CN101826446A (en) * | 2009-03-04 | 2010-09-08 | 东京毅力科创株式会社 | Film deposition apparatus and film deposition method |
| CN205821451U (en) * | 2016-07-11 | 2016-12-21 | 中山德华芯片技术有限公司 | A kind of air intake structure of rotary disc-type MOCVD reative cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117684156A (en) * | 2024-01-11 | 2024-03-12 | 北京北方华创微电子装备有限公司 | Edge air inlet device, semiconductor process chamber and semiconductor process equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN205821451U (en) | A kind of air intake structure of rotary disc-type MOCVD reative cell | |
| CN102859645B (en) | Processing method with Temperature Distribution control and device | |
| CN201626981U (en) | Gas inlet device of chemical vapor phase deposition epitaxy equipment | |
| CN101611472A (en) | Gas handling system | |
| CN102953047A (en) | Film deposition apparatus | |
| CN103098175A (en) | Showerhead assembly with gas injection distribution devices | |
| CN103031540B (en) | Reaction chamber device and there is its substrate processing equipment | |
| CN1263569A (en) | Method and apparatus for fabrication of thin films by chemical vapor deposition | |
| EP3181722A1 (en) | Planetary rotation fluidized apparatus for nanoparticle atomic layer deposition | |
| CN101148755A (en) | Underlay processing device | |
| CN103243311A (en) | Gas transport reaction chamber with orthogonal perpendicular inlet gas/horizontal inlet gas on substrate surface | |
| CN102312221A (en) | Atomic layer deposition apparatus employing uniform air intake system | |
| CN105369348A (en) | Wafer carrier plate for MOCVD reaction system | |
| CN105970188A (en) | Gas feeding structure of rotating disc type MOCVD (Metalorganic Chemical Vapor Deposition) reaction chamber | |
| CN102199761A (en) | Thin film deposition apparatus | |
| CN110512192A (en) | A kind of chemical vapor deposition planet pallet device and air inlet method | |
| CN107022753B (en) | A kind of atomic layer deposition reaction unit and via material surface film depositing operation | |
| CN104096656A (en) | Coating Device And Coating Method | |
| CN105493240B (en) | Method of producing epitaxial layer of binary semiconductor material | |
| CN205821450U (en) | A kind of chemical gas-phase deposition system | |
| CN106756867A (en) | A kind of metal organic chemical vapor deposition reaction system | |
| US9404182B2 (en) | Multi-wafer reactor | |
| CN103849855A (en) | Chemical vapor deposition equipment and carrying mechanism for chemical vapor deposition equipment | |
| CN110226217A (en) | Substrate board treatment and substrate processing method using same | |
| US9087695B2 (en) | Multi-wafer reactor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160928 |
|
| WD01 | Invention patent application deemed withdrawn after publication |