CN102383106A - Metal organic chemical vapour deposition reaction chamber for fast removing residual reaction gas - Google Patents
Metal organic chemical vapour deposition reaction chamber for fast removing residual reaction gas Download PDFInfo
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- CN102383106A CN102383106A CN2010102724565A CN201010272456A CN102383106A CN 102383106 A CN102383106 A CN 102383106A CN 2010102724565 A CN2010102724565 A CN 2010102724565A CN 201010272456 A CN201010272456 A CN 201010272456A CN 102383106 A CN102383106 A CN 102383106A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 70
- 239000012495 reaction gas Substances 0.000 title abstract description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title abstract 3
- 239000007789 gas Substances 0.000 claims abstract description 99
- 239000007921 spray Substances 0.000 claims abstract description 18
- 238000001514 detection method Methods 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 239000000376 reactant Substances 0.000 claims description 34
- 239000000284 extract Substances 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 238000005507 spraying Methods 0.000 description 7
- 239000000498 cooling water Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010504 bond cleavage reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
A metal organic chemical vapour deposition reaction chamber for fast removing a residual reaction gas comprises an air inlet of the reaction chamber, an air inlet pipeline of the reaction chamber, an upper buffer chamber, a lower buffer chamber, a spray mouth, a sheet loading table, a heating assembly, a residual gas discharge pipeline, a tail gas pipeline, a control valve, a buffer chamber pressure detection meter and a vacuum pump; the air inlet pipeline of the reaction chamber is a multi-path air inlet pipeline; the spray mouth of the reaction gas is arranged on the upper part of the sheet loading table. The tail gas pipeline is arranged in the reaction chamber; the residual gas discharge pipeline is arranged in the buffer chamber; the residual gas discharge pipeline and the tail gas pipeline of the reaction chamber are combined to be one pipeline through a joint, and then are connected with the vacuum pump which is used for extracting the tail gas. The invention has the advantages that the metal organic chemical vapour deposition reaction chamber can fast remove the residual gas in the vapour deposition reaction chamber, discharge the residual gas by using a gas-extracting vacuum pump of the vapour deposition reaction chamber and part of the tail pipeline, so as to make an interface among different epitaxial-layer films become steep, and improve performance of devices.
Description
Technical field
The present invention relates to a kind of vapor deposition apparatus of compound semiconductor epitaxial growth usefulness, particularly a kind of metal-organic chemical vapor deposition equipment reaction cavity of quickly eliminating residual reactant gases.
Background technology
Metal-organic chemical vapor deposition equipment (MOCVD) technology collection precision optical machinery, semiconductor material, vacuum electronic, hydromeehanics, optics, chemistry, computingmachine is multidisciplinary be one, be a kind of level of automation height, cost an arm and a leg, high-end semiconductor material, photoelectron specific equipment that technological integrated level is high.MOCVD is a kind of non-equilibrium growing technology; Its working mechanism is through the source gas transmission, makes to carry out heat scission reaction on III family alkylate (TMGa, TMIn, TMA1, two luxuriant magnesium etc.) and the substrate of V family hydrogenate (AsH3, PH3, NH3 etc.) in reaction chamber.Growth velocity with regard to epitaxial material is more moderate, can more accurately control thickness.Its component and growth velocity are by the source flux decision of the air-flow of various heterogeneities and accurately control.MOCVD is as the epitaxially grown Perfected process of compound semiconductor materials; Have quality height, good stability, good reproducibility, technology flexibly, can the mass-producing volume production etc. characteristics; Become industry and produced the key core equipment of semiconductor photoelectric device and microwave device, had broad application prospects and industrialization value.
Reaction cavity is the most crucial part of whole M OCVD equipment, has determined the performance of entire equipment.And the geometry of cavity and size are the primary factor that influences deposition properties because its directly influence gas in the chamber intravital flow behavior, and the transporting and diffusion way of reactant gases.Along with need of industrial production; The size in entire reaction chamber becomes increasing; Through the size extensibility that is combined to form cavity of complicated gas flow, be cavity gas flow emphasis of design how, its residual gas that holds is more and more in the technology process of growth in addition; The more and more difficult thereby the growth that makes the thin layer material becomes becomes more and more crucial so how to remove the residual reaction gas that remains in the reaction chamber in the process of growth different layers material fast.During such as growth LED multiple quantum well layer; From a last process step row to next technology during the step; The gas that a last technology did not use in the step will get into next technology in the step, thereby causes the variation of interface layer composition, and serious meeting causes down the component of one deck to change.
Summary of the invention
The objective of the invention is provides a kind of metal-organic chemical vapor deposition equipment reaction cavity of quickly eliminating residual reactant gases to the defective that exists in the prior art.The present invention includes: reaction chamber inlet mouth 1,2,3,4,5; Reflection chamber intake ducting 6, go up cushion chamber 7, down cushion chamber 8, cushioning fender 9, mouth spray 10,, dynamic seal place 20, residual gas discharge pipe 13 and 14, tail gas pipeline 15, the valve 22 of slide holder 11, heating component 12, spraying cooling water import 16, spraying cooling water outlet 17, cooling cavity 26, reflection top, chamber 18, reflection bottom, chamber 19, top and bottom, extract the vacuum pump 23 of tail gas, cushion chamber pressure detection table 21.Its principle of work is that gas is through reflecting chamber inlet mouth 1,2,4; Can on slide holder 11, form the radial spoke jet through reaction chamber intake ducting 6; Reaction chamber inlet mouth 3,5 gets into the VCP spray stream that mouth spray 10 forms through slide holder 11 through last cushion chamber 7 and following cushion chamber 8 respectively; Flow the consumption that compensates the reactant of radial spoke jet on slide holder 11 through vertical spray, be formed on the uniform laminar flow of reactant concn on the slide holder 11.Have aperture at cushioning fender 9 with spraying on the loam cake 24, and weld out residual gas discharge pipe 13,14 through aperture, residual gas discharge pipe 14 converges the back with tail gas pipeline 15 through three-way interface and is connected with the inlet mouth of the vacuum pump that extracts tail gas 23.Because reaction chamber will often be opened in the production process, promptly reaction chamber top 18 can move upward disengaging reaction chamber bottom 19, so residual gas discharge pipe 14 adopts corrugated tubes to carry out external connection.A kind of in addition scheme is exactly that exhaust line is designed to reflect chamber path from top to bottom, the dynamic seal place 20 design discharging pipe interface dynamic seals 25 in reaction chamber top and reaction chamber bottom.Residual gas discharge pipe 14 merges into a pipeline with tail gas pipeline 15 through Y-junction and links to each other with the inlet mouth of the vacuum pump that extracts tail gas 23.A valve 22 is installed in the residual gas discharge pipe, can opens this valve 22 during residual gas in needing the cleaning reaction chamber, residual gas is emitted rapidly through residual gas discharge pipe 13,14.Extract influence out for fear of residual gas to the reaction cavity flow field; A cushion chamber pressure detection table 21 is set in last cushion chamber 7; Through replenishing of the carrier gas in cushion chamber 7; Keep the pressure in the cushion chamber constant, when removing residual gas, guaranteed that the flow field on the slide holder 11 is constant like this.Can greatly remove the residual reaction gas that exists in cushion chamber 7, the following cushion chamber 8 like this, prevent that it from reacting on slide holder 11, thereby can improve the abruptness at interface.Advantage of the present invention is to have solved existing yield production type cvd chamber body to increase the defective that its residual gas that holds can't be removed fast owing to cavity; Utilize bleed vacuum pump and the part tail gas pipeline of cvd chamber body self to discharge residual gas in addition; Improve usage ratio of equipment, reduced equipment cost.
Description of drawings
Fig. 1 structural representation of the present invention;
The structural representation that Fig. 2 residual gas discharge pipe is introduced through the reaction chamber bottom.
Among the figure: 1 reaction chamber inlet mouth: reactant gases A; 2 reaction chamber inlet mouths: reactant gases B; 3 reaction chamber inlet mouths: reactant gases C; 4 reaction chamber inlet mouths: reactant gases D; 5 reaction chamber inlet mouths: reactant gases E; 6 reflection chamber intake ductings; Cushion chamber on 7; 8 times cushion chambers; 9 cushioning fenders; 10 mouth sprays; 11 slide holders; 12 heating components; 13 and 14 residual gas discharge pipes; 15 tail gas pipelines; 16 spraying cooling water inlet; The outlet of 17 spraying cooling water; 18 reaction chamber tops; Bottom, 19 reflection chamber; Dynamic seal place of 20 reaction chamber tops and bottom; 21 cushion chamber pressure detection tables; 22 valves; 23 extract the vacuum pump of tail gas; 24 spray loam cakes; 25 discharge pipe interface dynamic seals; 26 cooling cavitys.
Embodiment
Embodiment one
Further specify embodiments of the invention below in conjunction with accompanying drawing:
Referring to Fig. 1, the cooling cavity 26 that is provided with cushion chamber 7, following cushion chamber 8 in the reflection top, chamber 18 and links to each other with outlet 18 with spraying cooling water inlet 17.Be provided with cushioning fender 9 in the last cushion chamber 7.
Reactant gases A correspondence reaction chamber inlet mouth 1, the corresponding reflection of reactant gases B chamber inlet mouth 2, the corresponding reflection of reactant gases D chamber inlet mouth 4; Reactant gases A, B, D form the radial spoke jet through reaction chamber intake ducting 6 on slide holder 11, reactant gases A, reactant gases B, reactant gases D mix above slide holder 11 and react.The corresponding reflection of reactant gases C chamber inlet mouth 3, the corresponding reaction chamber inlet mouth 5 of reactant gases E flow through the VCP spray that mouth spray 10 forms through slide holder 11 through last cushion chamber 7 and following cushion chamber 8 respectively.Mouth spray 10 be shaped as hole or slit; The quantity that the quantity of mouth spray 10 is can be according to the size design of cavity different; The distribution mode of mouth spray 10 is circle distribution or array distribution or distribution, and reactant gases C gets into from reaction chamber inlet mouth 3 and goes up cushion chamber 7, vertically flows to slide holder 11 via mouth spray 10 then; Flow the consumption that compensates the reactant of radial spoke jet on slide holder 11 through vertical spray, be formed on the uniform laminar flow of reactant concn on the slide holder 11.Have aperture at cushioning fender 7 with spraying on the loam cake 24; And through residual gas discharge pipe 13 of aperture welding, residual gas discharge pipe 13,14 converges the back with tail gas pipeline 15 through three-way interface and is connected with the inlet mouth of the vacuum pump that extracts tail gas 23.Because reaction chamber will often be opened in the production process, promptly reaction chamber upper cap 118 can move upward disengaging reaction chamber bottom 19, so residual gas discharge pipe 14 adopts corrugated tubes to carry out external connection.A kind of in addition scheme is exactly that exhaust line is designed to from top to bottom the path of reaction chamber bottom to reaction chamber top, dynamic seal place 20 in reaction chamber top and reaction chamber bottom, a discharge pipe interface of design dynamic seal 25.
A valve 22 is installed in the residual gas discharge pipe, can opens this valve 22 during residual gas in needing the cleaning reaction chamber, residual gas is emitted rapidly through residual gas discharge pipe 13,14.Extract influence out for fear of residual gas, guarantee the stable of flow field on the slide holder 11 the reaction cavity flow field, deflated simultaneously on cushion chamber 7 carry out replenishing of carrier gas.A buffer gas pressure detection table 21 is set in last cushion chamber 7; Can be from controlling through 21 pressure that detect in the cushion chamber; And come the flow of adjusting control valve 22 and make-up carrier gas, thereby guarantee stablizing of pressure and flow through PID (proportional-integral derivative controller) control.Through replenishing of the carrier gas in last cushion chamber 7, keep the pressure in the cushion chamber constant, like this when removing residual gas, guaranteed flow field constant on the slide holder 11.The residual reaction gas that so greatly exists in the cleaning reaction chamber, thus the abruptness at interface can be improved.
When the growth monolayer material, closed control valve 21, reactant gases reacts in slide holder 11 mixing, and unnecessary gas is then taken away by the vacuum pump that extracts tail gas 23 through tail gas pipeline 15.When during another kind of material, fast opening valve 21 by the automatic realization of software to growth by a certain material transition of growth, reactant gases is without slide holder 11, directly taken away by the vacuum pump that extracts tail gas 23 through residual gas discharge pipe 13,14.
Embodiment two
Embodiment two is identical with embodiment one, and different is that residual gas discharge pipe 14 is introduced through reaction chamber bottom 19, between reaction chamber top 18 and reaction chamber bottom 19, passes through the connection that discharge pipe interface dynamic seal 25 realizes pipelines, referring to Fig. 2.
Claims (5)
1. the metal-organic chemical vapor deposition equipment reaction cavity of a quickly eliminating residual reactant gases; Comprise: reflection chamber inlet mouth, reaction chamber intake ducting, go up cushion chamber, down cushion chamber, mouth spray, cushioning fender, slide holder, heating component, residual gas discharge pipe, tail gas pipeline, valve, cushion chamber pressure detection table, extract the vacuum pump of tail gas; The reaction chamber intake ducting is the multichannel intake ducting; Cushion chamber is arranged on reaction chamber top, is provided with cushioning fender in the cushion chamber, and a part of reactant gases gets into cushion chamber through the reaction chamber intake ducting and flows out through mouth spray; Effusive direction is vertical with slide holder; Part reactant gases directly gets into the reflection chamber through the reaction chamber intake ducting, on slide holder, forms radial flow, is provided with the tail gas pipeline in the reaction chamber; It is characterized in that being provided with in the said cushion chamber residual gas exhaust line, the residual gas discharge pipe merges into a pipeline with the tail gas pipeline of reaction chamber through joint and links to each other with the vacuum pump that extracts tail gas.
2. the metal-organic chemical vapor deposition equipment reaction cavity of quickly eliminating residual reactant gases according to claim 1 is characterized in that being provided with a valve in the said residual gas discharge pipe.
3. the metal-organic chemical vapor deposition equipment reaction cavity of quickly eliminating residual reactant gases according to claim 1 is characterized in that said going up in the cushion chamber is provided with a cushion chamber pressure detection table.
4. the metal-organic chemical vapor deposition equipment reaction cavity of quickly eliminating residual reactant gases according to claim 1; It is characterized in that said reaction chamber intake ducting is the multichannel intake ducting; Part reactant gases gets into upward through the reaction chamber intake ducting, and cushion chamber flows out through mouth spray with following cushion chamber; The vertical slide holder of effusive direction, a part of reactant gases directly gets into the reflection chamber through the reaction chamber intake ducting, on slide holder, forms radial flow.
5. the metal-organic chemical vapor deposition equipment reaction cavity of quickly eliminating residual reactant gases according to claim 1; It is characterized in that said residual gas discharge pipe introduces through the reaction chamber bottom, between reaction chamber bottom and top, realize being connected of pipeline through the dynamic seal of gas exhaust duct interface.
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