CN201035181Y - A F-P etalon type wavestrip switch - Google Patents
A F-P etalon type wavestrip switch Download PDFInfo
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- CN201035181Y CN201035181Y CNU2007200067473U CN200720006747U CN201035181Y CN 201035181 Y CN201035181 Y CN 201035181Y CN U2007200067473 U CNU2007200067473 U CN U2007200067473U CN 200720006747 U CN200720006747 U CN 200720006747U CN 201035181 Y CN201035181 Y CN 201035181Y
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Abstract
The utility model discloses a waveband switch of F-P etalon, comprising a cross wavelength division multiplexer which has a F-P etalon therein, and the free spectral range of the cross wavelength division multiplexer is twice as long as the parity channel spacing of the wavelength cross multiplexing; an etalon cavity long fine adjustment device which can conduct fine adjustment of the optical spacing between the two reflecting surfaces of the F-P etalon; or an etalon angle adjusting device which can rotate the F-P etalon. The utility model can change one or more related parameters of nv, d, and theta of the F-P etalon through the etalon cavity long fine adjustment device or the etalon angle adjusting device after adopting the above technnical scheme, thus make the transmission peak of the F-P etalon shifting, and make the channel wavelength of the F-P etalon which is corresponding to the original transmission peak of the F-P etalon switching at two status of transmission and reflection, therefore, realize the waveband switch function that the optical signal of the channel can select export at two interfaces.
Description
Technical Field
The utility model relates to an optical fiber communication field especially relates to an optical signal who utilizes the technique of F-P etalon type to realize the passageway all the way can switch over the output at two output ports, and the optical signal output of passageway all the way is then not influenced cross wavelength division multiplexing device in addition.
Background
The cross wavelength division multiplexer (Interleaver) as a core device of a Dense Wavelength Division Multiplexing (DWDM) system basically has the functions of: an optical signal with a channel interval f input from an input end is divided into optical signals of odd and even channels with a channel interval 2f and output through two output ports. Currently, in the process of being used in practical communication networks, the concept of a band switch is proposed: the device can not only realize the wavelength cross multiplexing function, but also can select to output odd-even channel signals at one port simultaneously by switching in a certain mode, for example, optical signals of two odd-even channels are simultaneously selected to be output at an odd channel port. In the switching process, the channel signal (for example, odd channel) output by the original port is always output by the port and is not affected by the switching, and the channel signal (for example, even channel) output by the other port is merged into the output channel (for example, odd channel) for output.
There are several cross wavelength division multiplexers that operate differently, and techniques for implementing the function of the wavelength division multiplexer by using the filter characteristics of the F-P etalon have been used and are well known for a long time.
The F-P etalon corresponds to a comb filter, the transmission curve of which is shown in fig. 1, the x direction is the transmission frequency v, the y direction is the etalon transmittance, and the filter characteristic can be expressed by the following formula:
free Spectral Range (FSR) of F-P etalon:
formula (1)
Transmission curve:
Wherein:
where c is the speed of light in vacuum; n is the intra-cavity medium refractive index for the calculated center wavelength; theta is an included angle between the light ray and the normal line of the reflecting surface of the F-P etalon when the light ray is transmitted in the cavity; d is the physical cavity length of the F-P etalon, namely the physical distance between two reflecting surfaces of the F-P etalon; upsilon is the calculated transmission frequency of the light; n upsilon is the medium refractive index corresponding to the calculated frequency light; ρ is the reflectivity of the reflecting surface of the F-P etalon.
U.S. Pat. Nos. WDM multiplexer-demultiplexer using fiber-optic filters (U.S. Pat. Nos. 5835517, 6122417) and Jean-Marc Halbout (translation: gien-Mark Heiboberb) et al, in 1998 and 2000, in 1992, in U.S. Pat. No. Optical wavelength demultiplexing filter for multiplexing a selected one of a plurality of wavelengths (U.S. Pat. No. 5408319), all of which propose the use of F-P to implement wavelength division techniques and to adjust the wavelength by an effective wavelength-multiplexing or wavelength-adjusting method, and in addition, in a wavelength-adjusting method using an equivalent wavelength-multiplexing filter. None of these devices can perform the function of a band switch as described above.
Disclosure of Invention
An object of the utility model is to provide a wave band switch based on filtering characteristic of F-P etalon.
In order to achieve the above object, the present invention comprises a cross wavelength division multiplexer, wherein an F-P standard is provided in the cross wavelength division multiplexer, the free spectral range of the cross wavelength division multiplexer is 2 times of the odd and even channel spacing of the cross wavelength multiplexing, and an etalon cavity length fine-tuning device is provided for fine-tuning the optical spacing between two reflecting surfaces of the F-P etalon; or another standard angle adjusting device capable of rotating the F-P etalon.
The utility model discloses an adopt foretell technical scheme, through etalon chamber length micromatic setting or etalon angle adjusting device, change one or more in the relevant parameter n upsilon of F-P etalon, d, theta to make the F-P etalon transmission peak value take place to drift, make its and the former channel wavelength that transmits the peak value and correspond of F-P etalon switch under transmission and reflection two kinds of states, realize the wave band switch function of the optical signal of this passageway at two ports selectable outputs from this.
Taking a cross wavelength division multiplexer with an odd-even channel interval of 50G as an example, the FSR of the corresponding F-P etalon should be 100G, the channel correspondence relationship between the transmission curve of the F-P etalon and the odd-even interval is shown in fig. 2 and 3, in which the solid line is the etalon transmission curve, the dotted line is the transmission channel, the x direction is the transmission frequency v, and the y direction is the etalon transmittance.
As can be seen from fig. 2, when one channel (for example, the odd channel) corresponds to the transmittance peak (hereinafter, referred to as "transmittance peak") of the F-P etalon, the etalon transmittance of the other channel (for example, the even channel) is the lowest, and the channel is reflected and output by the F-P etalon. In this state, the device realizes the wavelength cross multiplexing function.
As can be seen from the formulas (1) and (2), when one or more of the parameters n ν, d, θ of the F-P etalon is changed by a small amount, the wavelength of the transmission peak of the F-P etalon shifts, the transmittance of the channel signal (e.g., odd channel) corresponding to the original transmission peak rapidly decreases to a level close to that of the other channel (e.g., even channel), and both the channel signals are reflected by the etalon to realize the output of the same port. The function of the wave band switch is realized by the switching of the two states.
The utility model discloses in, change F-P etalon parameter accessible can be to the etalon chamber length micromatic setting that the optics interval (being optical chamber length) of two plane of reflection of F-P etalon finely tuned realize. The etalon cavity length fine tuning device can be a mechanical fine tuning device, and the physical cavity length d of the F-P etalon is changed in a mechanical mode; the piezoelectric control type fine adjustment device can also be used for adjusting the physical cavity length d of the F-P standard tool by controlling the external voltage by utilizing the micro deformation (electrostriction) of the piezoelectric material under the action of the external electric field; the optical cavity length of the F-P etalon can be adjusted by controlling temperature change by using the thermal expansion and contraction performance of common materials or by using the characteristics of thermo-optic effect and thermal expansion effect of optical materials; the device can also be a rotary fine-tuning device for the glass slide in the cavity, and due to the difference between the refractive index of the rotatable glass slide and air, different rotation angles can cause the change of actual optical paths in different cavities of the F-P etalon, so that the wavelength drift amount of the F-P etalon can be adjusted.
Assuming that the F-P etalon has a separation of two odd and even channels of 50G, the FSR of the F-P etalon is 100G. When a positive incidence mode is adopted, such as transmission peak shift 25G, the axial distance between two reflecting surfaces of the F-P etalon is calculated to be adjusted by only 1.163 mu m.
The etalon cavity length fine-tuning device is different according to the different types of the F-P etalon, and when the F-P etalon is the air gap F-P etalon, the etalon cavity length fine-tuning device is one or a combination of a plurality of mechanical fine-tuning devices, piezoelectric control type fine-tuning devices, temperature control type fine-tuning devices or intracavity slide rotating type fine-tuning devices; when the F-P etalon is a solid cavity F-P etalon, the etalon cavity length fine tuning device is a temperature controlled fine tuning device.
In the present invention, changing the parameters of the F-P etalon can be realized by an etalon angle adjusting device capable of rotating the F-P etalon. The etalon angle adjusting device changes the angle of light incident on the F-P etalon by rotating the F-P etalon, and as can be known from a Fresnel formula (n 1 multiplied by sin theta 1= n2 multiplied by sin theta 2), the angle of light refracted into the cavity of the F-P etalon changes along with the change of the incident angle, namely the angle of light reflected back and forth in the cavity (theta in the formula (2)) changes correspondingly. As can be seen from the formula (2), the transmission peak of the F-P etalon will also shift accordingly, thereby achieving the objective of the present invention.
The utility model discloses in, for realizing more optimized performance, used F-P etalon realizes the approximate light filtering passband of rectangle best, and its ascending edge and falling edge should be as steep as possible, can adopt the multicavity etalon in 2 chambeies ~ 5 chambeies to realize. According to the actual needs and the difficulty of manufacturing at present, the number of cavities of the adopted multi-cavity etalon is generally between 2 and 5.
Drawings
The invention is described in further detail below with reference to the accompanying drawings:
FIG. 1 is a transmission plot of an F-P etalon;
fig. 2 is a diagram of the channel mapping between the transmission curve and the odd-even spacing of the F-P etalon in the normal wavelength cross-multiplexing state according to the present invention;
fig. 3 is a channel mapping diagram of the transmission curve and odd-even spacing of the F-P etalon in the same port output state according to the present invention;
fig. 4 is a schematic structural view of embodiment 1 of the present invention employing an air gap F-P etalon;
FIG. 5 is a schematic diagram of the structure of embodiment 2 of the present invention utilizing a solid cavity F-P etalon;
FIG. 6 is a schematic structural view of the rotary fine adjustment device for intracavity slides of the present invention in example 3;
fig. 7 is a schematic structural view of embodiment 4 of the present invention in which an etalon angle adjusting means is used;
fig. 8 is a schematic diagram of the structure of embodiment 4 of the present invention using a 3-cavity solid cavity F-P etalon.
Detailed Description
The embodiment of the present invention is shown in fig. 4 to 7.
1. Example 1: as shown in fig. 4.
In the embodiment, an air gap F-P etalon is adopted, which includes a first optical collimator 101 and a second optical collimator 102, where the first optical collimator 101 is an input end and is also an output end of an even channel optical signal, and the second optical collimator 102 is an output end of an odd channel optical signal; an air gap F-P etalon 103 comprising a first reflective surface 1031 and a second reflective surface 1032, the second reflective surface 1032 being connected to and adjusted by an axial etalon cavity length fine tuning device 104.
When the wavelength cross-multiplexing is implemented in this embodiment, the multi-wavelength optical signals λ 1 to λ m are input by the first optical collimator 101, the distance between the first reflecting surface 1031 and the second reflecting surface 1032 of the air-gap F-P etalon 103 is controlled by the etalon cavity length fine-tuning device 104, and the transmission peak of the transmission curve coincides with the odd channels (λ 1, λ 3, λ 5 …) of the input signal, so that the odd channel optical signals are transmitted and output from the transmission output port of the second optical collimator 102. Since the FSR of the air-gap F-P etalon 102 is 2 times the odd-even channel spacing, the even channel (λ 2, λ 4, λ 6 …) throw ratio is just at the valley of the transmission curve of the air-gap F-P etalon and close to 0, so the even channel optical signal is reflected and output from the first optical fiber collimator 101 at the reflection output port.
When it is necessary to switch to another working state, that is, the signals of the odd and even channels are output from the same output port, the optical separation distance between the first reflecting surface 1031 and the second reflecting surface 1032 is slightly changed by adjusting the etalon cavity length fine tuning device 104, and at this time, the FSR of the air-gap F-P etalon 103 is basically not changed, but the wavelength frequency corresponding to the transmission peak thereof is shifted accordingly. The drift amount is reasonably controlled, so that the wavelengths of the odd and even channels are not superposed with the transmission peak, and the odd and even channels have extremely low transmittance, so that the odd and even channels are reflected by the air-gap F-P etalon 103 and output from the first optical collimator 101 of the reflection output port.
The etalon cavity length fine tuning device 104 may be a mechanical fine tuning device driven by a mechanical structure, such as a precision motor; or a piezoelectric control type fine adjustment device, such as piezoelectric ceramics using electrostrictive effect; or a temperature control type fine adjustment device, for example, a material with thermal expansion is adopted, the physical distance between two reflecting surfaces is adjusted by utilizing the performance of thermal expansion and cold contraction, for example, a temperature control device is connected with a spacing block material of an etalon.
2. Example 2: as shown in fig. 5.
This embodiment is substantially the same as embodiment 1, but employs a solid cavity F-P etalon 203, the etalon cavity length fine tuning device of which is a temperature-controlled fine tuning device 204, and the temperature-controlled fine tuning device 204 includes a temperature control circuit 205, and the transmission peak shift of the solid cavity F-P etalon 203 is adjusted by means of temperature adjustment. According to the characteristics of the optical material with thermo-optic effect and thermal expansion effect, the refractive index and the thickness of the optical material can be changed along with the change of temperature, the physical cavity length d of the F-P etalon is changed by utilizing the thermal expansion characteristic of the optical material, or the thermo-optic effect of the optical material is utilized to change the optical cavity length under the condition that the physical cavity length d is not changed, the medium refractive index n upsilon of the cavity material is changed, and the refractive index n upsilon can be changed simultaneously. The temperature adjustment mode may be a TEC (Thermoelectric cooler) temperature adjustment mode.
3. Example 3: as shown in fig. 6.
In this embodiment, an air gap F-P etalon 103 is used, and a cavity length fine tuning device of the etalon is a cavity slide rotating fine tuning device 304, that is, a slide 3041 with an adjustable rotation angle is added in the middle of the air gap F-P etalon 103, and the slide 3041 is connected with a slide rotation angle adjusting device 3042. Due to the difference between the refractive index of the glass slide 304 and the refractive index of air, different rotation angles of the glass slide cause the actual optical path in the cavity of different air-gap F-P etalons 103 to change, so that the wavelength drift amount of the air-gap F-P etalon can be adjusted.
4. Example 4: as shown in fig. 7.
In this embodiment, the solid cavity F-P etalon 203 is adopted, the multi-wavelength optical signals λ 1- λ m are input by the first optical fiber collimator 101 at the input end, the second optical fiber collimator 102 is the output end of the odd channel optical signal (λ 1, λ 3, λ 5 …), the third optical fiber collimator 401 is the output end of the even channel optical signal (λ 2, λ 4, λ 6 …), the etalon angle adjusting device 404 can rotate the solid cavity F-P etalon 203 to adjust the incident angle of the solid cavity F-P203 etalon, and the transmission peak of the F-P203 etalon can also shift correspondingly, thereby achieving the purpose of the present invention. The structure of this embodiment can also be used for air gap F-P etalons. The angle adjustment amount required in the present embodiment is large, and in the case of conforming to the conditions in embodiment 1, the structure of the present embodiment is changed so that the angle required for rotation is about 1.6 °.
5. Example 5: as shown in fig. 8.
In practical application, because an approximately rectangular optical filter passband needs to be realized, a multi-cavity etalon is often adopted, the cavity length of each cavity, the reflectivity of a cavity mirror and the like can be different according to the requirements, the number of the cavities of the multi-cavity etalon is between 2 and 5 according to the current practical requirements and the manufacturing difficulty, and the specific number of the cavities of the F-P etalon is determined according to the requirements of the flatness of the practical passband and the isolation degree of a channel.
This embodiment employs a 3-chamber solid chamber F-P etalon 503 and a corresponding temperature-controlled trimming device 504, where the temperature-controlled trimming device 504 includes a temperature control circuit 505 for adjusting the transmission peak shift of the solid chamber F-P etalon 503 by means of temperature adjustment.
Claims (5)
1. A wave band switch of F-P etalon comprises a cross wavelength division multiplexer, wherein the cross wavelength division multiplexer is provided with the F-P etalon, the free spectral range of the cross wavelength division multiplexer is 2 times of odd and even channel intervals of wavelength cross multiplexing, and the wave band switch is characterized in that: and the etalon cavity length fine-tuning device can be used for fine-tuning the optical distance between the two reflecting surfaces of the F-P etalon.
2. A band switch for an F-P etalon according to claim 1 wherein: and an etalon angle adjusting device capable of rotating the F-P standard.
3. A band switch for an F-P etalon according to claim 1 wherein: the F-P etalon is an air gap F-P etalon, and the etalon cavity length fine adjustment device is one or a combination of a mechanical fine adjustment device, a piezoelectric control type fine adjustment device, a temperature control type fine adjustment device or an intracavity slide rotating type fine adjustment device.
4. A band switch for an F-P etalon according to claim 1, wherein: the F-P etalon is a solid cavity F-P etalon, and the etalon cavity length fine-tuning device is a temperature control type fine-tuning device.
5. A band switch of an F-P etalon according to any one of claims 1 to 4, wherein: the F-P etalon is a multi-cavity etalon with 2-5 cavities.
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| Application Number | Priority Date | Filing Date | Title |
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| CNU2007200067473U CN201035181Y (en) | 2007-04-11 | 2007-04-11 | A F-P etalon type wavestrip switch |
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| CNU2007200067473U CN201035181Y (en) | 2007-04-11 | 2007-04-11 | A F-P etalon type wavestrip switch |
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| CN102253485A (en) * | 2011-04-14 | 2011-11-23 | 福州高意通讯有限公司 | Precision etalon |
| CN102694548A (en) * | 2011-03-23 | 2012-09-26 | 精工爱普生株式会社 | Optical module for atomic oscillator and atomic oscillator |
| CN103196569A (en) * | 2013-04-22 | 2013-07-10 | 哈尔滨工业大学（威海） | Method for measuring laser wavelength by rotating Fabry-Perot interferoscope |
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- 2007-04-11 CN CNU2007200067473U patent/CN201035181Y/en not_active Expired - Lifetime
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| CN103196569B (en) * | 2013-04-22 | 2016-05-18 | 哈尔滨工业大学（威海） | A kind of rotary process Fabry-Perot interference mirror is measured the method for optical maser wavelength |
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| CN109738162A (en) * | 2019-01-08 | 2019-05-10 | 中国科学院合肥物质科学研究院 | A kind of apparatus and method using angle tuning measurement F-P etalon parameter |
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| CN110596846B (en) * | 2019-09-20 | 2022-04-08 | 武汉光迅科技股份有限公司 | Etalon packaging structure and wavelength locking device |
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