CN104009382A - Optical structure - Google Patents
Optical structure Download PDFInfo
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- CN104009382A CN104009382A CN201310056800.0A CN201310056800A CN104009382A CN 104009382 A CN104009382 A CN 104009382A CN 201310056800 A CN201310056800 A CN 201310056800A CN 104009382 A CN104009382 A CN 104009382A
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- chamber
- etalon
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- optical structure
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Abstract
The invention discloses an optical structure which includes a mode-locked laser device. The optical structure is characterized in that an isolator, a multi-cavity F-P elaton, and an amplifier are sequentially arranged on a light path of emergent light of the mode-locked laser device. Through adoption of the technical scheme, the beneficial effects of the optical structure are that the optical structure adopts the multi-cavity F-P elaton as a frequency selection element of the medium-short-cavity mode-locked laser device and then injects thinning multi-wavelength laser after the frequency selection into the amplifier so that the design space of the laser device is improved significantly. The optical structure has the advantages of being simple in structure and lower in cost and the like.
Description
Technical field
The present invention relates to optical field, relate in particular to the optical texture of optical-fibre communications field.
Background technology
For laser with active-passive lock mould, if will obtain communication band 25G, 50G, the output of 100G multi-wavelength, its chamber is long only has several millimeters more, and this is serious restriction to laser design, if chamber length is added and grows to several centimetres or longer, the design space of laser will be largely increased.
Summary of the invention
The object of the invention is to the deficiency existing for prior art, a kind of simple in structure, lower-cost optical texture is provided.
For achieving the above object, technical scheme proposed by the invention is as follows: a kind of optical texture, comprise mode-locked laser, and it is characterized in that: along being provided with successively isolator, multi-cavity F-P etalon, amplifier in the light path of mode-locked laser emergent light.
Further, described isolator can adopt circulator to substitute.
Further, described multi-cavity F-P etalon has N chamber, is made up of N+1 parallel reflective faces, and wherein every two adjacent parallel reflective faces form a F-P chamber.
Further, the reflectivity of described each reflecting surface can all equate, part equates or all not etc., and the long part in chamber in each F-P chamber equates or all not etc.
Further, in described multi-cavity F-P etalon chamber, medium can be air or other materials.
Adopt technique scheme, the beneficial effect of optical texture of the present invention is: the present invention adopts the frequency-selecting element of multi-cavity F-P etalon as middle short cavity mode-locked laser, dredge multiwavelength laser injection amplification device by becoming after frequency-selecting again, the design space of laser will be largely increased, there is the advantages such as simple in structure, cost is lower.
Brief description of the drawings
Fig. 1 is optical texture schematic diagram of the present invention;
Fig. 2 is the transmittance function of single chamber F-P etalon;
Fig. 3 is the transmittance function of two-chamber F-P etalon;
Fig. 4 is the breadth of spectrum line of two-chamber F-P etalon;
Fig. 5 is the transmittance function of two-chamber F-P etalon;
Fig. 6 is the transmittance function of two-chamber F-P etalon.
Embodiment
Below in conjunction with brief description of the drawings and embodiment, the invention will be further described.
As shown in Figure 1, comprising: a kind of optical texture, comprises mode-locked laser 101, along being provided with successively isolator 102, multi-cavity F-P etalon 103, amplifier 104 in the light path of mode-locked laser 101 emergent lights.Wherein the common each spectrum component of the emergent light of mode-locked laser 101 interval is extremely short, in order to increase frequency spectrum spacing to meet communication band (as 25G, demand 50G), by mode-locked laser emitting laser first after isolator 102, then enter multi-cavity F-P etalon 103, after interfering in chamber, only have some characteristic frequency can see through multi-cavity F-P etalon, all the other frequencies are reflected back isolator 101, finally, the pectination multiwavelength laser that spectrum intervals becomes after dredging enters amplifier 104 and amplifies.
Further, described isolator also can adopt circulator to substitute.
Further, described multi-cavity F-P etalon has N chamber, is made up of N+1 parallel reflective faces, and wherein every two adjacent parallel reflective faces form a F-P chamber.
Further, the reflectivity of described each reflecting surface can all equate, part equates or all not etc., and the long part in chamber in each F-P chamber equates or all not etc.
Further, in described multi-cavity F-P etalon chamber, medium can be air or other materials.
For the advantage of multi-cavity F-P etalon with respect to single chamber etalon is described, first provide the transmittance function of single chamber etalon here as shown in Figure 2.
For single chamber etalon, its free spectral range (FSR) is as shown in the formula expression:
FSR=C/2nL
Wherein c is the light velocity, and L is the length of single chamber etalon, and n is the refractive index of single chamber etalon, and in the present invention, in tentative standard tool chamber, medium is air, and refractive index is 1.
In order to obtain the FSR of 50GHz, the length of single chamber etalon only has 3mm, and design space is less, and breadth of spectrum line is wider, to such an extent as to comprises multiple longitudinal modes.
High design freedom, the narrow linewidth performance of explanation multi-cavity as an example of two-chamber etalon example below.
Two-chamber etalon shown in Fig. 3, first, the reflectivity of the 3rd reflecting surface is that the reflectivity of 0.7, the second reflecting surface is 0.97; Ante-chamber chamber is long is 15mm, and back cavity chamber is long is 9mm, total long 24mm in chamber.Two-chamber etalon under this structure, FSR is consistent with single chamber etalon of 3mm, as shown in Figure 3; And live width, much smaller than the live width of single chamber etalon, is conducive to single longitudinal mode output, as shown in Figure 4.
Two-chamber etalon shown in Fig. 5, first, the reflectivity of the 3rd reflecting surface is that the reflectivity of 0.7, the second reflecting surface is 0.97; Ante-chamber chamber is long is 27mm, and back cavity chamber is long is 21mm, total long 49mm in chamber.Two-chamber etalon under this structure, FSR is still 50GHz.
Two-chamber etalon shown in Fig. 6, first, the reflectivity of the 3rd reflecting surface is that the reflectivity of 0.7, the second reflecting surface is 0.9985; Ante-chamber chamber is long is 15mm, and back cavity chamber is long is 9mm, total long 24mm in chamber.Two-chamber etalon under this structure, FSR is still 50GHz.Compared with the two-chamber etalon of Fig. 3 structure, the maximum of transmittance function is reduced to 0.173, but has promoted the ratio at primary maximum peak and secondary maximum peak.
In sum, for the same single, double chamber etalon of total chamber appearance, double cavity structure can increase the FSR of optical system, and in like manner, multi-cavity etalon also can increase the FSR of optical system, and system FSR is long by total chamber, and the long proportionate relationship of front/back cavity determines jointly.
Although specifically show and introduced the present invention in conjunction with preferred embodiment; but those skilled in the art should be understood that; not departing from the spirit and scope of the present invention that appended claims limits; the various variations of in the form and details the present invention being made, are protection scope of the present invention.
Claims (5)
1. an optical texture, comprises mode-locked laser, it is characterized in that: along being provided with successively isolator, multi-cavity F-P etalon, amplifier in the light path of mode-locked laser emergent light.
2. a kind of optical texture according to claim 1, is characterized in that: described isolator adopts circulator to substitute.
3. a kind of optical texture according to claim 1, is characterized in that: described multi-cavity F-P etalon has N chamber, is made up of N+1 parallel reflective faces, and wherein every two adjacent parallel reflective faces form a F-P chamber.
4. a kind of optical texture according to claim 3, is characterized in that: the reflectivity of described each reflecting surface all equates, part equates or all not etc., and the long part in the chamber in each F-P chamber equates or all not etc.
5. a kind of optical texture according to claim 1, is characterized in that: in described multi-cavity F-P etalon chamber, medium is air.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310056800.0A CN104009382A (en) | 2013-02-22 | 2013-02-22 | Optical structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310056800.0A CN104009382A (en) | 2013-02-22 | 2013-02-22 | Optical structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104009382A true CN104009382A (en) | 2014-08-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201310056800.0A Pending CN104009382A (en) | 2013-02-22 | 2013-02-22 | Optical structure |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1523331A (en) * | 1976-02-26 | 1978-08-31 | Standard Telephones Cables Ltd | Optical interference filter |
| US20040001258A1 (en) * | 2002-06-28 | 2004-01-01 | Mandeep Singh | Solid state etalons with low thermally-induced optical path length change |
| US6678441B1 (en) * | 2001-01-05 | 2004-01-13 | Henry F. Taylor | Multireflector fiber optic filter apparatus and method |
| CN201035181Y (en) * | 2007-04-11 | 2008-03-12 | 福州高意通讯有限公司 | A F-P etalon type wavestrip switch |
| CN201828338U (en) * | 2010-10-22 | 2011-05-11 | 福州高意通讯有限公司 | Optical structure for improving resolution ratio of simple spectrometer |
| CN102087376A (en) * | 2010-12-28 | 2011-06-08 | 福州高意光学有限公司 | Double-cavity etalon and fabrication method thereof |
-
2013
- 2013-02-22 CN CN201310056800.0A patent/CN104009382A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1523331A (en) * | 1976-02-26 | 1978-08-31 | Standard Telephones Cables Ltd | Optical interference filter |
| US6678441B1 (en) * | 2001-01-05 | 2004-01-13 | Henry F. Taylor | Multireflector fiber optic filter apparatus and method |
| US20040001258A1 (en) * | 2002-06-28 | 2004-01-01 | Mandeep Singh | Solid state etalons with low thermally-induced optical path length change |
| CN201035181Y (en) * | 2007-04-11 | 2008-03-12 | 福州高意通讯有限公司 | A F-P etalon type wavestrip switch |
| CN201828338U (en) * | 2010-10-22 | 2011-05-11 | 福州高意通讯有限公司 | Optical structure for improving resolution ratio of simple spectrometer |
| CN102087376A (en) * | 2010-12-28 | 2011-06-08 | 福州高意光学有限公司 | Double-cavity etalon and fabrication method thereof |
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Application publication date: 20140827 |