CN1997943A - 浸没光刻用真空*** - Google Patents
浸没光刻用真空*** Download PDFInfo
- Publication number
- CN1997943A CN1997943A CNA2005800199796A CN200580019979A CN1997943A CN 1997943 A CN1997943 A CN 1997943A CN A2005800199796 A CNA2005800199796 A CN A2005800199796A CN 200580019979 A CN200580019979 A CN 200580019979A CN 1997943 A CN1997943 A CN 1997943A
- Authority
- CN
- China
- Prior art keywords
- flow rate
- jar
- control device
- liquid
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D57/00—Separation, other than separation of solids, not fully covered by a single other group or subclass, e.g. B03C
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Toxicology (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Degasification And Air Bubble Elimination (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/869,191 | 2004-06-16 | ||
US10/869,191 US7481867B2 (en) | 2004-06-16 | 2004-06-16 | Vacuum system for immersion photolithography |
PCT/GB2005/002205 WO2005124464A2 (en) | 2004-06-16 | 2005-06-06 | Vacuum system for immersion photolithography |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101434052A Division CN101794081B (zh) | 2004-06-16 | 2005-06-06 | 浸没光刻用真空*** |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1997943A true CN1997943A (zh) | 2007-07-11 |
CN1997943B CN1997943B (zh) | 2010-05-05 |
Family
ID=32851367
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101434052A Active CN101794081B (zh) | 2004-06-16 | 2005-06-06 | 浸没光刻用真空*** |
CN2005800199796A Active CN1997943B (zh) | 2004-06-16 | 2005-06-06 | 浸没光刻用真空*** |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101434052A Active CN101794081B (zh) | 2004-06-16 | 2005-06-06 | 浸没光刻用真空*** |
Country Status (10)
Country | Link |
---|---|
US (7) | US7481867B2 (zh) |
EP (1) | EP1756672B1 (zh) |
JP (3) | JP4772787B2 (zh) |
KR (2) | KR101151767B1 (zh) |
CN (2) | CN101794081B (zh) |
AT (1) | ATE464589T1 (zh) |
DE (1) | DE602005020619D1 (zh) |
GB (1) | GB0414967D0 (zh) |
TW (1) | TWI339131B (zh) |
WO (1) | WO2005124464A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101762986B (zh) * | 2008-12-11 | 2013-07-10 | Asml荷兰有限公司 | 流体抽取***、光刻设备和器件制造方法 |
CN109075053A (zh) * | 2016-12-12 | 2018-12-21 | 株式会社荏原制作所 | 基板处理装置、排出方法以及程序 |
CN112684675A (zh) * | 2020-12-30 | 2021-04-20 | 浙江启尔机电技术有限公司 | 真空***及使用该真空***的浸没式光刻机 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4515385B2 (ja) | 2003-07-09 | 2010-07-28 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
KR20190002749A (ko) * | 2003-07-28 | 2019-01-08 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
KR101590686B1 (ko) | 2003-09-03 | 2016-02-01 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
EP1747499A2 (en) | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US20070216889A1 (en) * | 2004-06-04 | 2007-09-20 | Yasufumi Nishii | Exposure Apparatus, Exposure Method, and Method for Producing Device |
US20070139628A1 (en) * | 2004-06-10 | 2007-06-21 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8508713B2 (en) * | 2004-06-10 | 2013-08-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8717533B2 (en) * | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8373843B2 (en) * | 2004-06-10 | 2013-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
KR20170010907A (ko) | 2004-06-10 | 2017-02-01 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
US7481867B2 (en) | 2004-06-16 | 2009-01-27 | Edwards Limited | Vacuum system for immersion photolithography |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7379155B2 (en) | 2004-10-18 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7397533B2 (en) | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG124351A1 (en) | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
EP1863070B1 (en) | 2005-01-31 | 2016-04-27 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
US8018573B2 (en) * | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8514365B2 (en) * | 2007-06-01 | 2013-08-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7924404B2 (en) * | 2007-08-16 | 2011-04-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
NL1036306A1 (nl) | 2007-12-20 | 2009-06-23 | Asml Netherlands Bv | Lithographic apparatus and in-line cleaning apparatus. |
NL2003226A (en) | 2008-08-19 | 2010-03-09 | Asml Netherlands Bv | Lithographic apparatus, drying device, metrology apparatus and device manufacturing method. |
JP2010098172A (ja) * | 2008-10-17 | 2010-04-30 | Canon Inc | 液体回収装置、露光装置及びデバイス製造方法 |
NL2004820A (en) * | 2009-06-30 | 2011-01-04 | Asml Netherlands Bv | Lithographic apparatus and a method of measuring flow rate in a two phase flow. |
US20110211911A1 (en) * | 2010-03-01 | 2011-09-01 | Wavefront Technology Solutions Inc. | Method and apparatus for enhancing multiphase extraction of contaminants |
US20120012191A1 (en) * | 2010-07-16 | 2012-01-19 | Nikon Corporation | Liquid recovery apparatus, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
NL2009899A (en) | 2011-12-20 | 2013-06-24 | Asml Netherlands Bv | A pump system, a carbon dioxide supply system, an extraction system, a lithographic apparatus and a device manufacturing method. |
CN104035288A (zh) * | 2014-06-05 | 2014-09-10 | 浙江大学 | 用于浸没式光刻机中的负压环境下的连续气液分离装置 |
CN106663622B (zh) * | 2014-07-31 | 2020-01-07 | 株式会社资源开发研究所 | 清洗装置 |
Family Cites Families (136)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3314219A (en) * | 1965-03-10 | 1967-04-18 | Bass Brothers Entpr Inc | Drilling mud degassers for oil wells |
GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US3573975A (en) * | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
US3675395A (en) * | 1970-10-09 | 1972-07-11 | Keene Corp | Apparatus for the purification of oils and the like |
ATE1462T1 (de) | 1979-07-27 | 1982-08-15 | Werner W. Dr. Tabarelli | Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe. |
US4315760A (en) * | 1980-01-17 | 1982-02-16 | Bij De Leij Jan D | Method and apparatus for degasing, during transportation, a confined volume of liquid to be measured |
FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
JPS5754317A (en) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4390273A (en) * | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
DD206607A1 (de) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur beseitigung von interferenzeffekten |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
US4466253A (en) * | 1982-12-23 | 1984-08-21 | General Electric Company | Flow control at flash tank of open cycle vapor compression heat pumps |
DD242880A1 (de) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | Einrichtung zur fotolithografischen strukturuebertragung |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
FR2557643B1 (fr) * | 1983-12-30 | 1986-05-09 | Inst Francais Du Petrole | Dispositif d'alimentation d'une pompe de fluide diphasique et installation de production d'hydrocarbures comportant un tel dispositif |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
FI73950C (fi) * | 1985-02-15 | 1987-12-10 | Hackman Ab Oy | Foerfarande och anordning vid pumpning och volymmaetning av livsmedelsvaetskor. |
CN85104763B (zh) * | 1985-06-13 | 1988-08-24 | 沈汉石 | 液压***中消除气穴的方法和装置 |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
US4730634A (en) * | 1986-06-19 | 1988-03-15 | Amoco Corporation | Method and apparatus for controlling production of fluids from a well |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
US4886530A (en) * | 1987-10-28 | 1989-12-12 | Sundstrand Corporation | Single stage pump and separator for two phase gas and liquid mixtures |
US5040020A (en) * | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
US5312552A (en) * | 1993-02-02 | 1994-05-17 | Norman J M | Method and apparatus for removing BTX-type gases from a liquid |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
DE69516568T2 (de) * | 1994-03-04 | 2001-01-04 | Ncr International, Inc. | Bereichserweitertes drahtloses Übertragungssystem mit modulierter Rückstrahlung |
JPH08907A (ja) * | 1994-06-17 | 1996-01-09 | Miura Co Ltd | 真空脱気における脱気度調整方法 |
KR960024699U (ko) | 1994-12-17 | 1996-07-22 | 임항준 | 스티커 |
US6033475A (en) | 1994-12-27 | 2000-03-07 | Tokyo Electron Limited | Resist processing apparatus |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
WO1998009278A1 (en) * | 1996-08-26 | 1998-03-05 | Digital Papyrus Technologies | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US6001189A (en) * | 1996-09-30 | 1999-12-14 | Micron Technology, Inc. | Method for reducing gaseous species of contamination in wet processes |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
AU1505699A (en) | 1997-12-12 | 1999-07-05 | Nikon Corporation | Projection exposure method and projection aligner |
WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
US6247903B1 (en) * | 1999-03-26 | 2001-06-19 | Lam Research Corporation | Pressure fluctuation dampening system |
TWI242111B (en) * | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
EP1409834A2 (en) * | 2000-01-17 | 2004-04-21 | Lattice Intellectual Property Limited | Slugging control |
JP2001272604A (ja) * | 2000-03-27 | 2001-10-05 | Olympus Optical Co Ltd | 液浸対物レンズおよびそれを用いた光学装置 |
TW591653B (en) * | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
SE517821C2 (sv) * | 2000-09-29 | 2002-07-16 | Tetra Laval Holdings & Finance | Metod och anordning för att kontinuerligt avlufta en vätska |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
JP2002257137A (ja) | 2001-02-27 | 2002-09-11 | Koyo Seiko Co Ltd | 磁気軸受装置 |
JP2002257138A (ja) | 2001-02-28 | 2002-09-11 | Canon Inc | 静圧流体軸受装置、およびこれを用いたステージ装置、露光装置ならびにデバイス製造方法 |
US20020163629A1 (en) * | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
US20020178254A1 (en) * | 2001-05-23 | 2002-11-28 | International Business Machines Corporation | Dynamic deployment of services in a computing network |
US6600547B2 (en) * | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
US6897941B2 (en) * | 2001-11-07 | 2005-05-24 | Applied Materials, Inc. | Optical spot grid array printer |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US20040154641A1 (en) * | 2002-05-17 | 2004-08-12 | P.C.T. Systems, Inc. | Substrate processing apparatus and method |
WO2004019128A2 (en) | 2002-08-23 | 2004-03-04 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI251127B (en) * | 2002-11-12 | 2006-03-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
SG2010050110A (en) * | 2002-11-12 | 2014-06-27 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP2495613B1 (en) * | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithographic apparatus |
CN101349876B (zh) * | 2002-11-12 | 2010-12-01 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1424599B1 (en) * | 2002-11-29 | 2008-03-12 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121829A1 (en) | 2002-11-29 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
KR20120127755A (ko) | 2002-12-10 | 2012-11-23 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
JP4529433B2 (ja) * | 2002-12-10 | 2010-08-25 | 株式会社ニコン | 露光装置及び露光方法、デバイス製造方法 |
WO2004053957A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 面位置検出装置、露光方法、及びデバイス製造方法 |
JP4608876B2 (ja) | 2002-12-10 | 2011-01-12 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
SG152063A1 (en) | 2002-12-10 | 2009-05-29 | Nikon Corp | Exposure apparatus and method for producing device |
CN100429748C (zh) | 2002-12-10 | 2008-10-29 | 株式会社尼康 | 曝光装置和器件制造方法 |
US6992750B2 (en) * | 2002-12-10 | 2006-01-31 | Canon Kabushiki Kaisha | Exposure apparatus and method |
WO2004053956A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及び露光方法、デバイス製造方法 |
WO2004053951A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光方法及び露光装置並びにデバイス製造方法 |
EP1571694A4 (en) | 2002-12-10 | 2008-10-15 | Nikon Corp | EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE DEVICE |
KR20110086130A (ko) | 2002-12-10 | 2011-07-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
TW200421444A (en) | 2002-12-10 | 2004-10-16 | Nippon Kogaku Kk | Optical device and projecting exposure apparatus using such optical device |
JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
JP4184346B2 (ja) | 2002-12-13 | 2008-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上のスポットを照射するための方法及び装置における液体除去 |
AU2003283717A1 (en) | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
EP1579435B1 (en) | 2002-12-19 | 2007-06-27 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
JP4428115B2 (ja) | 2003-04-11 | 2010-03-10 | 株式会社ニコン | 液浸リソグラフィシステム |
JP2004320016A (ja) | 2003-04-11 | 2004-11-11 | Nikon Corp | 液浸リソグラフィシステム |
JP2005277363A (ja) * | 2003-05-23 | 2005-10-06 | Nikon Corp | 露光装置及びデバイス製造方法 |
US7317504B2 (en) * | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1486827B1 (en) | 2003-06-11 | 2011-11-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4343597B2 (ja) * | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
JP4515385B2 (ja) * | 2003-07-09 | 2010-07-28 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
JP2006528835A (ja) * | 2003-07-24 | 2006-12-21 | カール・ツアイス・エスエムテイ・アーゲー | マイクロリソグラフィ投影露光装置および浸漬液体を浸漬空間へ導入する方法 |
US7779781B2 (en) * | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
KR101590686B1 (ko) * | 2003-09-03 | 2016-02-01 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
EP2267537B1 (en) | 2003-10-28 | 2017-09-13 | ASML Netherlands BV | Lithographic apparatus |
US7545481B2 (en) * | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005175176A (ja) | 2003-12-11 | 2005-06-30 | Nikon Corp | 露光方法及びデバイス製造方法 |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
JP4954444B2 (ja) * | 2003-12-26 | 2012-06-13 | 株式会社ニコン | 流路形成部材、露光装置及びデバイス製造方法 |
JP2005191393A (ja) * | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
EP1703548B1 (en) * | 2004-01-05 | 2010-05-12 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
JP4513590B2 (ja) * | 2004-02-19 | 2010-07-28 | 株式会社ニコン | 光学部品及び露光装置 |
EP1747499A2 (en) * | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
KR20170010907A (ko) * | 2004-06-10 | 2017-02-01 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
US8508713B2 (en) * | 2004-06-10 | 2013-08-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
JP4515335B2 (ja) * | 2004-06-10 | 2010-07-28 | 株式会社ニコン | 露光装置、ノズル部材、及びデバイス製造方法 |
US8717533B2 (en) * | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US20070139628A1 (en) * | 2004-06-10 | 2007-06-21 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8373843B2 (en) * | 2004-06-10 | 2013-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US7481867B2 (en) * | 2004-06-16 | 2009-01-27 | Edwards Limited | Vacuum system for immersion photolithography |
US7701550B2 (en) * | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7379155B2 (en) * | 2004-10-18 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
2004
- 2004-06-16 US US10/869,191 patent/US7481867B2/en not_active Expired - Fee Related
- 2004-07-02 GB GBGB0414967.0A patent/GB0414967D0/en not_active Ceased
-
2005
- 2005-06-06 WO PCT/GB2005/002205 patent/WO2005124464A2/en not_active Application Discontinuation
- 2005-06-06 EP EP05747245A patent/EP1756672B1/en active Active
- 2005-06-06 CN CN2010101434052A patent/CN101794081B/zh active Active
- 2005-06-06 AT AT05747245T patent/ATE464589T1/de not_active IP Right Cessation
- 2005-06-06 JP JP2007516020A patent/JP4772787B2/ja not_active Expired - Fee Related
- 2005-06-06 KR KR1020067026392A patent/KR101151767B1/ko active IP Right Grant
- 2005-06-06 CN CN2005800199796A patent/CN1997943B/zh active Active
- 2005-06-06 DE DE602005020619T patent/DE602005020619D1/de active Active
- 2005-06-06 KR KR1020117011954A patent/KR101341923B1/ko active IP Right Grant
- 2005-06-16 TW TW094120050A patent/TWI339131B/zh not_active IP Right Cessation
-
2008
- 2008-12-19 US US12/340,326 patent/US8164734B2/en not_active Expired - Fee Related
-
2010
- 2010-03-19 JP JP2010063578A patent/JP5226025B2/ja not_active Expired - Fee Related
-
2011
- 2011-05-02 JP JP2011102691A patent/JP5226101B2/ja not_active Expired - Fee Related
- 2011-07-20 US US13/187,166 patent/US8830440B2/en not_active Expired - Fee Related
-
2014
- 2014-08-26 US US14/469,389 patent/US9507270B2/en active Active
-
2016
- 2016-11-28 US US15/362,530 patent/US9857699B2/en not_active Expired - Lifetime
-
2017
- 2017-12-28 US US15/857,368 patent/US10168624B2/en not_active Expired - Lifetime
-
2018
- 2018-11-28 US US16/202,170 patent/US20190094715A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101762986B (zh) * | 2008-12-11 | 2013-07-10 | Asml荷兰有限公司 | 流体抽取***、光刻设备和器件制造方法 |
CN109075053A (zh) * | 2016-12-12 | 2018-12-21 | 株式会社荏原制作所 | 基板处理装置、排出方法以及程序 |
CN112684675A (zh) * | 2020-12-30 | 2021-04-20 | 浙江启尔机电技术有限公司 | 真空***及使用该真空***的浸没式光刻机 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1997943B (zh) | 浸没光刻用真空*** | |
US6193783B1 (en) | Apparatus and method for supplying a process solution | |
US10248033B2 (en) | Lithographic apparatus and device manufacturing method | |
KR101907351B1 (ko) | 액 처리 방법 및 필터 내의 기체의 제거 장치 | |
JP4511868B2 (ja) | 可撓性タンクとこれを用いた薬液供給装置 | |
KR100874564B1 (ko) | 약액 공급장치 및 약액 공급장치의 탈기방법 | |
WO2006051745A1 (ja) | 小流量液体の温調方法及びそのシステム | |
CN104698767B (zh) | 一种浸没式光刻机的液体控制装置 | |
CN107879517A (zh) | 一种用于浸没式光刻的超纯水脱气装置 | |
CN215088122U (zh) | Hmds供应装置 | |
JP2876072B2 (ja) | 処理装置 | |
CN213049714U (zh) | 一种过滤速度对比装置 | |
JPH03232503A (ja) | 液体から気体を分離する装置 | |
JPH04248464A (ja) | 水質測定装置 | |
JP2004339968A (ja) | 超微小流量液体供給装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: EDWARDS CO., LTD. Free format text: FORMER OWNER: THE BOC GROUP PLC Effective date: 20071214 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20071214 Address after: West Sussex Applicant after: Boc Group PLC Address before: England Applicant before: The Boc Group PlC |
|
ASS | Succession or assignment of patent right |
Owner name: ASML NETHERLAND B.V. Free format text: FORMER OWNER: EDWARDS CO., LTD. Effective date: 20090724 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20090724 Address after: Holland Weide Eindhoven Applicant after: ASML Holland Co., Ltd. Address before: West Sussex Applicant before: Boc Group PLC |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |