CN1937160B - Flat board display of bar-type cathode side-grid controlled structure and manufacture process - Google Patents
Flat board display of bar-type cathode side-grid controlled structure and manufacture process Download PDFInfo
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- CN1937160B CN1937160B CN200610107299A CN200610107299A CN1937160B CN 1937160 B CN1937160 B CN 1937160B CN 200610107299 A CN200610107299 A CN 200610107299A CN 200610107299 A CN200610107299 A CN 200610107299A CN 1937160 B CN1937160 B CN 1937160B
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Abstract
The flat panel display includes cathode glass faceplate, anode glass faceplate, and sealed vacuum cavity surrounded by glass frame. There are cathode conductive layer, Nano carbon tubes, and side grid control structure of stripe shaped cathode on the cathode glass faceplate. There are anode conductive layer and phosphor layers prepared on the conductive layer on anode glass faceplate. Structure of supporting wall and attached elements of getter are located between anode glass faceplate and cathode glass faceplate. The invention reduces working voltage of grid structure further, enhances control function of grid structure, raises electron emission efficiency of Nano carbon tubes so as to be in favor of enhancing display brightness of whole apparatus. Advantages are: stable and reliable manufacturing procedure, simple technique and structure, and low cost.
Description
Technical field
The invention belongs to the mutual crossing domain in technical field of flat panel display, microelectronics science and technology field, vacuum science and technical field and nanometer science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, particularly a kind of flat-panel monitor of strip type cathode sided-grid controlled structure and manufacture craft thereof.
Background technology
Carbon nano-tube is with its unique physics, chemical property and have and can be applied to the great potential in the middle of the various display devices and caused people's very big concern.Carbon nano-tube has high surface ratio, little tip curvature radius, and high stability physicochemical properties and high mechanical strength are very suitable for as Field Emission Cathode Materials.The field-emission plane display that utilizes carbon nano-tube to make as cathode material then is a kind of novel flat-panel display devices, also will occupy certain status on the Display Technique stage.It has adopted and has been similar to the principle of luminosity that sends visible light in the conventional cathode ray tube display with electron beam impact fluorescence bisque, has therefore just inherited its high image quality, and it is used more and more widely.
Grid structure is one of crucial control element in the three-stage structure field-emission plane display, and can it directly determining carbon nanotube cathod carry out the electronics emission, and the size of grid operating voltage also is to estimate the important performance indexes of display device.Operating voltage of grid structure is low more, meets the requirement of low pressure flat-panel display device more.Need shorten on the one hand grid structure and the carbon nanotube cathod structure distance between the two as much as possible, the distance between the two is more little, and needed grid operating voltage is also just low more; Just need improve on the other hand, so that better carry out the controlled function of grid structure existing grid structure and carbon nanotube cathod structure.In addition, also need the insulating layer material between grid structure and the carbon nanotube cathod structure is taken in, comprise its insulation property or the like.As everyone knows, can the class of insulation of vacuum be better than other insulating material, effectively be utilized.Therefore, in the manufacturing process of practical devices, adopt any grid control model actually, adopt any insulating material actually, how further to improve the control performance of grid structure, all need to take in earnest.
In addition, in the middle of the panel field emission display spare of three-stage structure, guaranteeing that grid structure has carbon nanotube cathod under the prerequisite of good control action, also need to reduce as much as possible the total device cost, carry out reliable and stable, with low cost, function admirable, high quality devices is made.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, the flat-panel monitor and the manufacture craft thereof of strip type cathode sided-grid controlled structure simple in structure.
The object of the present invention is achieved like this, comprise by cathode glass faceplate, anode glass panel and all around glass enclose the sealed vacuum chamber that frame constitutes; On the anode glass panel, have anode conductive layer, preparation on anode conductive layer phosphor powder layer and at the insulation paste layer of the non-display area of anode conductive layer printing; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component have cathode conductive layer, carbon nano-tube and strip type cathode sided-grid controlled structure on cathode glass faceplate.
The backing material of described strip type cathode sided-grid controlled structure is glass, just cathode glass faceplate; Silicon dioxide layer after the etching on the cathode glass faceplate forms insulating barrier; Metal level after the etching above the insulating barrier forms the cathode leg layer; Doped polysilicon layer after the etching above the cathode leg layer forms the cathode substrate layer; The cathode substrate layer is the cylinder type shape, and upper and lower surface is the plane, and lower surface closely contacts with the cathode leg layer; Metal level after the etching on the cathode substrate layer side forms cathode conductive layer; Cathode conductive layer is positioned on the sidewall surfaces of cathode substrate layer, presenting bar shaped distributes alternately, promptly the side top edge from the cathode substrate layer forms a bar shaped cathode conductive layer to lower limb, depend on the sidewall surfaces of cathode substrate layer, to be spaced from each other between the adjacent bar cathode conductive layer is horizontal, can not directly connect, be to be undertaken interconnective by the cathode substrate layer conduction of inside between the bar shaped cathode conductive layer; Silicon dioxide layer after the etching above the cathode substrate layer forms cathode coating; The last end face that cathode coating will cover the cathode substrate layer vacant part all and on the cathode substrate layer sidewall, the part between the just adjacent negative electrode bus; Silicon dioxide layer after the etching above the insulating barrier forms separator; The upper and lower surface of separator is the plane, and lower surface will cover cathode leg layer and vacant insulating barrier part; There is circular apertures in the separator, exposes cathode substrate layer and cathode conductive layer, cathode coating; The madial wall of circular apertures is perpendicular to the face of cylinder of cathode glass faceplate in the separator; The height of separator can not surpass the height of cathode substrate layer; Metal level after the etching above the separator forms the grid lead layer; Grid lead layer major part all be positioned at separator above, but its fore-end will extend to circular apertures is inner, present vacant state; The front end overhanging portion of grid lead layer slightly is bent upwards, but the peak of its sweep can not surpass the height of cathode substrate layer; Silicon dioxide layer after the etching above the grid lead layer forms the grid cover layer; The grid cover layer is wanted the upper surface of cover grid trace layer, comprises the grid lead layer of front end overhanging portion; Made of carbon nanotubes is on cathode conductive layer.
The fixed position of described strip type cathode sided-grid controlled structure is for being fixed on the cathode glass faceplate; The cathode leg layer is metal gold, silver, copper, aluminium, molybdenum, chromium, tin, lead; The doping type of cathode substrate layer is n type, p type; Cathode conductive layer is metallic iron, cobalt, nickel; The trend of the trend of grid lead layer and cathode leg layer is orthogonal; The grid lead layer is metal gold, silver, molybdenum, chromium, aluminium.
A kind of manufacture craft of flat-panel monitor of strip type cathode sided-grid controlled structure, its manufacture craft is as follows:
1) making of cathode glass faceplate: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of insulating barrier: on cathode glass faceplate, prepare a silicon dioxide layer, form insulating barrier after the etching;
3) making of cathode leg layer: on insulating barrier, prepare a metal level, form the cathode leg layer after the etching;
4) making of cathode substrate layer: on the cathode leg layer, prepare a doped polysilicon layer, form the cathode substrate layer after the etching;
5) making of cathode conductive layer: prepare a metal level in the side of cathode substrate layer, form cathode conductive layer after the etching;
6) making of cathode coating: the surface preparation at the cathode substrate layer goes out a silicon dioxide layer, forms cathode coating after the etching;
7) making of separator: on insulating barrier, prepare a silicon dioxide layer, form separator after the etching;
8) making of grid lead layer: on separator, prepare a metal level, form the grid lead layer after the etching;
9) the tectal making of grid: on the grid lead layer, prepare a silicon dioxide layer, form the grid cover layer after the etching;
10) cleaning surfaces of strip type cathode sided-grid controlled structure is handled: clean is carried out on the surface to the strip type cathode sided-grid controlled structure, removes impurity and dust;
11) preparation of carbon nano-tube: with made of carbon nanotubes on cathode conductive layer;
12) making of anode glass panel: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
13) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
14) making of insulation paste layer: at the non-display area printing insulation paste layer of anode conductive layer;
15) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
16) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure and all around glass enclose frame and be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point;
17) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 14 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: after 5 minutes, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
Described step 15 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
The device that described step 17 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
At first, in described strip type cathode sided-grid controlled structure, grid structure has been produced on the side of carbon nanotube cathod.Like this,, will form powerful electric field strength, force carbon nano-tube to launch a large amount of electronics on top, carbon nanotube cathod surface when after applying appropriate voltage on the grid structure.Because grid structure is positioned at the side of carbon nanotube cathod, can greatly reduce the probability that grid structure is held back electron beam, can increase the operating current of device anode, thereby improve the display brightness of device.In addition, the grid structure front end is unsettled, and be bent upwards slightly, this also can shorten the distance between grid structure and the carbon nanotube cathod structure to a certain extent as much as possible, reduces the operating voltage of device.
Secondly, in described strip type cathode sided-grid controlled structure, with carbon nanotube cathod be produced on the strip type cathode conductive layer above.Like this, can greatly increase the field-causing electron emission area of carbon nanotube cathod, make more carbon nanotube cathod come in the middle of all participating in the electronics emission, can launch more electron rich phenomenon but also make full use of the carbon nano-tube that is in marginal position, help further improving the electronic transmitting efficiency of carbon nanotube cathod, improve the display brightness of integral device.
In addition, in described strip type cathode sided-grid controlled structure, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the manufacturing process of device, can carry out large-area element manufacturing, helped carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of strip type cathode sided-grid controlled structure;
Fig. 2 has provided the transversary schematic diagram of strip type cathode sided-grid controlled structure;
Fig. 3 has provided the strip type cathode oblique view of strip type cathode sided-grid controlled structure;
Fig. 4 has provided and has had the structural representation strip type cathode sided-grid controlled structure, the carbon nanotube field emission flat-panel screens.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
Described a kind of flat-panel monitor that has the strip type cathode sided-grid controlled structure, comprise by cathode glass faceplate [1], anode glass panel [11] and all around glass enclose the sealed vacuum chamber that frame [15] is constituted; On the anode glass panel, have anode conductive layer [12], preparation on anode conductive layer phosphor powder layer [14] and at the insulation paste layer [13] of the non-display area of anode conductive layer printing; Supporting wall structure between anode glass panel and cathode glass faceplate [17] and getter subsidiary component [16] is characterized in that: cathode conductive layer [5], carbon nano-tube [10] and strip type cathode sided-grid controlled structure are arranged on cathode glass faceplate.
Described strip type cathode sided-grid controlled structure comprises cathode glass faceplate [1], insulating barrier [2], cathode leg layer [3], cathode substrate layer [4], cathode conductive layer [5], cathode coating [6], separator [7], grid lead layer [8], grid cover layer [9] and carbon nano-tube [10] part.
The backing material of described strip type cathode sided-grid controlled structure is a glass, as soda-lime glass, Pyrex, just cathode glass faceplate; Silicon dioxide layer after the etching on the cathode glass faceplate forms insulating barrier; Metal level after the etching above the insulating barrier forms the cathode leg layer; Doped polysilicon layer after the etching above the cathode leg layer forms the cathode substrate layer; The cathode substrate layer is the cylinder type shape, and upper and lower surface is the plane, and lower surface closely contacts with the cathode leg layer; Metal level after the etching on the cathode substrate layer side forms cathode conductive layer; Cathode conductive layer is positioned on the sidewall surfaces of cathode substrate layer, presenting stripe shape distributes alternately, promptly the side top edge from the cathode substrate layer forms a strip type cathode conductive layer to lower limb, depend on the sidewall surfaces of cathode substrate layer, to be spaced from each other between adjacent stripe shape cathode conductive layer is horizontal, can not directly connect, be to be undertaken interconnective by the cathode substrate layer conduction of inside between the strip type cathode conductive layer; Silicon dioxide layer after the etching above the cathode substrate layer forms cathode coating; The last end face that cathode coating will cover the cathode substrate layer vacant part all and on the cathode substrate layer sidewall, the part between the just adjacent negative electrode bus; Silicon dioxide layer after the etching above the insulating barrier forms separator; The upper and lower surface of separator is the plane, and lower surface will cover cathode leg layer and vacant insulating barrier part; There is circular apertures in the separator, exposes cathode substrate layer and cathode conductive layer, cathode coating; The madial wall of circular apertures is perpendicular to the face of cylinder of cathode glass faceplate in the separator; The height of separator can not surpass the height of cathode substrate layer; Metal level after the etching above the separator forms the grid lead layer; Grid lead layer major part all be positioned at separator above, but its fore-end will extend to circular apertures is inner, present vacant state; The front end overhanging portion of grid lead layer slightly is bent upwards, but the peak of its sweep can not surpass the height of cathode substrate layer; Silicon dioxide layer after the etching above the grid lead layer forms the grid cover layer; The grid cover layer is wanted the upper surface of cover grid trace layer, comprises the grid lead layer of front end overhanging portion; Made of carbon nanotubes is on cathode conductive layer.
The fixed position of described strip type cathode sided-grid controlled structure is for being fixed on the cathode glass faceplate; The cathode leg layer can be metallic gold, silver, copper, aluminium, molybdenum, chromium, tin, lead; The doping type of cathode substrate layer can be the n type, also can be the p type; Cathode conductive layer can be metallic iron, cobalt, nickel; The trend of the trend of grid lead layer and cathode leg layer is orthogonal; The grid lead layer can be metallic gold, silver, molybdenum, chromium, aluminium.
A kind of manufacture craft that has the flat-panel monitor of strip type cathode sided-grid controlled structure, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate;
2) making of insulating barrier [2]: on cathode glass faceplate, prepare a silicon dioxide layer, form insulating barrier after the etching;
3) making of cathode leg layer [3]: on insulating barrier, prepare a metal molybdenum layer, form the cathode leg layer after the etching;
4) making of cathode substrate layer [4]: on the cathode leg layer, prepare a n type doped polysilicon layer, form the cathode substrate layer after the etching;
5) making of cathode conductive layer [5]: prepare a metal nickel dam in the side of cathode substrate layer, form cathode conductive layer after the etching;
6) making of cathode coating [6]: the surface preparation at the cathode substrate layer goes out a silicon dioxide layer, forms cathode coating after the etching;
7) making of separator [7]: on insulating barrier, prepare a silicon dioxide layer, form separator after the etching;
8) making of grid lead layer [8]: on separator, prepare a metallic spacer layer, form the grid lead layer after the etching;
9) making of grid cover layer [9]: on the grid lead layer, prepare a silicon dioxide layer, form the grid cover layer after the etching;
10) cleaning surfaces of strip type cathode sided-grid controlled structure is handled: clean is carried out on the surface to the strip type cathode sided-grid controlled structure, removes impurity and dust;
11) preparation of carbon nano-tube [10]: with made of carbon nanotubes on cathode conductive layer;
12) making of anode glass panel [11]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
13) making of anode conductive layer [12]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
14) making of insulation paste layer [13]: at the non-display area printing insulation paste layer of anode conductive layer;
15) making of phosphor powder layer [14]: the viewing area printing phosphor powder layer on anode conductive layer;
16) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [17] and all around glass enclose frame [15] and be assembled together, and getter [16] is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip;
17) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 14 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
Described step 15 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
The device that described step 17 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (6)
1. the flat-panel monitor of a strip type cathode sided-grid controlled structure, comprise by cathode glass faceplate [1], anode glass panel [11] and all around glass enclose the sealed vacuum chamber that frame [15] is constituted; On the anode glass panel, have anode conductive layer [12], preparation on anode conductive layer phosphor powder layer [14] and at the insulation paste layer [13] of the non-display area of anode conductive layer printing; Supporting wall structure between anode glass panel and cathode glass faceplate [17] and getter subsidiary component [16] is characterized in that:
Cathode conductive layer [5], carbon nano-tube [10] and strip type cathode sided-grid controlled structure are arranged on cathode glass faceplate;
The backing material of described strip type cathode sided-grid controlled structure is glass, just cathode glass faceplate; Silicon dioxide layer after the etching on the cathode glass faceplate forms insulating barrier; Metal level after the etching above the insulating barrier forms the cathode leg layer; Doped polysilicon layer after the etching above the cathode leg layer forms the cathode substrate layer; The cathode substrate layer is the cylinder type shape, and upper and lower surface is the plane, and lower surface closely contacts with the cathode leg layer; Metal level after the etching on the cathode substrate layer side forms cathode conductive layer; Cathode conductive layer is positioned on the sidewall surfaces of cathode substrate layer, presenting bar shaped distributes alternately, promptly the side top edge from the cathode substrate layer forms a bar shaped cathode conductive layer to lower limb, depend on the sidewall surfaces of cathode substrate layer, to be spaced from each other between the adjacent bar cathode conductive layer is horizontal, can not directly connect, be to be undertaken interconnective by the cathode substrate layer conduction of inside between the bar shaped cathode conductive layer; Silicon dioxide layer after the etching above the cathode substrate layer forms cathode coating; The last end face that cathode coating will cover the cathode substrate layer vacant part all and on the cathode substrate layer sidewall, the part between the just adjacent negative electrode bus; Silicon dioxide layer after the etching above the insulating barrier forms separator; The upper and lower surface of separator is the plane, and lower surface will cover cathode leg layer and vacant insulating barrier part; There is circular apertures in the separator, exposes cathode substrate layer and cathode conductive layer, cathode coating; The madial wall of circular apertures is perpendicular to the face of cylinder of cathode glass faceplate in the separator; The height of separator can not surpass the height of cathode substrate layer; Metal level after the etching above the separator forms the grid lead layer; Grid lead layer major part all be positioned at separator above, but its fore-end will extend to circular apertures is inner, present vacant state; The front end overhanging portion of grid lead layer slightly is bent upwards, but the peak of its sweep can not surpass the height of cathode substrate layer; Silicon dioxide layer after the etching above the grid lead layer forms the grid cover layer; The grid cover layer is wanted the upper surface of cover grid trace layer, comprises the grid lead layer of front end overhanging portion; Made of carbon nanotubes is on cathode conductive layer.
2. the flat-panel monitor of strip type cathode sided-grid controlled structure according to claim 1 is characterized in that: the fixed position of described strip type cathode sided-grid controlled structure is for being fixed on the cathode glass faceplate; The cathode leg layer is one of metal gold, silver, copper, aluminium, molybdenum, chromium, tin, lead; The doping type of cathode substrate layer is n type or p type; Cathode conductive layer is one of metallic iron, cobalt, nickel; The trend of the trend of grid lead layer and cathode leg layer is orthogonal; The grid lead layer is one of metal gold, silver, molybdenum, chromium, aluminium.
3. the manufacture craft of the flat-panel monitor of a strip type cathode sided-grid controlled structure as claimed in claim 1 is characterized in that, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of insulating barrier [2]: on cathode glass faceplate, prepare a silicon dioxide layer, form insulating barrier after the etching;
3) making of cathode leg layer [3]: on insulating barrier, prepare a metal level, form the cathode leg layer after the etching;
4) making of cathode substrate layer [4]: on the cathode leg layer, prepare a doped polysilicon layer, form the cathode substrate layer after the etching;
5) making of cathode conductive layer [5]: prepare a metal level in the side of cathode substrate layer, form cathode conductive layer after the etching;
6) making of cathode coating [6]: the surface preparation at the cathode substrate layer goes out a silicon dioxide layer, forms cathode coating after the etching;
7) making of separator [7]: on insulating barrier, prepare a silicon dioxide layer, form separator after the etching;
8) making of grid lead layer [8]: on separator, prepare a metal level, form the grid lead layer after the etching;
9) making of grid cover layer [9]: on the grid lead layer, prepare a silicon dioxide layer, form the grid cover layer after the etching;
10) cleaning surfaces of strip type cathode sided-grid controlled structure is handled: clean is carried out on the surface to the strip type cathode sided-grid controlled structure, removes impurity and dust;
11) preparation of carbon nano-tube [10]: with made of carbon nanotubes on cathode conductive layer;
12) making of anode glass panel [11]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
13) making of anode conductive layer [12]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
14) making of insulation paste layer [13]: at the non-display area printing insulation paste layer of anode conductive layer;
15) making of phosphor powder layer [14]: the viewing area printing phosphor powder layer on anode conductive layer;
16) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [17] and all around glass enclose frame [15] and be assembled together, and getter [16] is put in the middle of the cavity, fix with glass powder with low melting point;
17) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
4. the manufacture craft of the flat-panel monitor of strip type cathode sided-grid controlled structure according to claim 3, it is characterized in that: the making of described step 14) insulation paste layer is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes; Afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
5. the manufacture craft of the flat-panel monitor of strip type cathode sided-grid controlled structure according to claim 3 is characterized in that: the making of described step 15) phosphor powder layer is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
6. the manufacture craft of the flat-panel monitor of strip type cathode sided-grid controlled structure according to claim 3 is characterized in that: described step 17) finished product is made the device be specially having assembled and is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
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| CN200610107299A CN1937160B (en) | 2006-10-17 | 2006-10-17 | Flat board display of bar-type cathode side-grid controlled structure and manufacture process |
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| CN1937160B true CN1937160B (en) | 2010-05-26 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5666024A (en) * | 1995-06-23 | 1997-09-09 | Texas Instruments Incorporated | Low capacitance field emission device with circular microtip array |
| CN1794408A (en) * | 2005-12-27 | 2006-06-28 | 中原工学院 | Panel display having adulterated polycrystal silicon field emission cathode array structure and its manufacturing technology |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5666024A (en) * | 1995-06-23 | 1997-09-09 | Texas Instruments Incorporated | Low capacitance field emission device with circular microtip array |
| CN1794408A (en) * | 2005-12-27 | 2006-06-28 | 中原工学院 | Panel display having adulterated polycrystal silicon field emission cathode array structure and its manufacturing technology |
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| Title |
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| JP特开2006-144034A 2006.06.08 |
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