CN1839192A - 氧氮化物荧光体和发光器具 - Google Patents
氧氮化物荧光体和发光器具 Download PDFInfo
- Publication number
- CN1839192A CN1839192A CNA2004800240599A CN200480024059A CN1839192A CN 1839192 A CN1839192 A CN 1839192A CN A2004800240599 A CNA2004800240599 A CN A2004800240599A CN 200480024059 A CN200480024059 A CN 200480024059A CN 1839192 A CN1839192 A CN 1839192A
- Authority
- CN
- China
- Prior art keywords
- writing
- put down
- light
- fluor
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 12
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 12
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 12
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 12
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 12
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 12
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 12
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 12
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 12
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 12
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 12
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 12
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 12
- 238000002425 crystallisation Methods 0.000 claims description 50
- 239000000203 mixture Substances 0.000 claims description 41
- 230000008025 crystallization Effects 0.000 claims description 38
- 230000003287 optical effect Effects 0.000 claims description 16
- 239000006104 solid solution Substances 0.000 claims description 10
- 239000000470 constituent Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052765 Lutetium Inorganic materials 0.000 abstract description 2
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 2
- 229910003564 SiAlON Inorganic materials 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 11
- 230000005284 excitation Effects 0.000 description 10
- 238000004020 luminiscence type Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000000695 excitation spectrum Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005297 material degradation process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- -1 oxynitride Chemical class 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- GWYXTVGANSBRNB-UHFFFAOYSA-N terbium(iii) oxide Chemical compound O=[Tb]O[Tb]=O GWYXTVGANSBRNB-UHFFFAOYSA-N 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/597—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon oxynitride, e.g. SIALONS
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/77747—Silicon Nitrides or Silicon Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/77927—Silicon Nitrides or Silicon Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3227—Lanthanum oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3229—Cerium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3865—Aluminium nitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
- C04B2235/3878—Alpha silicon nitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3895—Non-oxides with a defined oxygen content, e.g. SiOC, TiON
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9646—Optical properties
- C04B2235/9661—Colour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2211/00—Plasma display panels with alternate current induction of the discharge, e.g. AC-PDPs
- H01J2211/20—Constructional details
- H01J2211/34—Vessels, containers or parts thereof, e.g. substrates
- H01J2211/42—Fluorescent layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Luminescent Compositions (AREA)
Abstract
本发明提供了与以往相比具有多彩波长的发光特性的氧氮化物荧光体及使用它的发光器具。作为其解决方案,通过以用一般式La3Si8N11O4表示的结晶相或者用一般式La3Si8-xAlxN11-xO4+x (其中,0<x≤4)表示的结晶相作为主成分,并对其添加而含有光学活性元素(M)来解决,所述光学活性元素(M)包括选自Mn、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu中的1种或者2种或2种以上的元素。
Description
技术领域
本发明涉及以用一般式La3Si8N11O4表示的结晶相或者用La3Si8-xAlxN11-xO4+x(其中,0<x≤4)表示的结晶相为主体的硅氧氮化物荧光体。
背景技术
荧光体被用于荧光显示管(VFD)、场致发射显示器(FED)、等离子体显示板(PDP)、阴极射线管(CRT)、白色发光二极管(LED)等。对于其中的任意一种用途,为了使荧光体发光,需要向荧光体供给激发荧光体用的能量,荧光体被真空紫外线、紫外线、电子射线、蓝色光等具有高能量的激发源激发,会发出可见光线。从而,荧光体暴露于如上所述的激发源下的结果是,存在荧光体的辉度会降低的问题。因此,作为与以往的硅酸盐荧光体、磷酸盐荧光体、铝酸盐荧光体、硫化物荧光体等荧光体相比辉度降低少的荧光体,提出了赛纶(Sialon)荧光体。
作为该赛纶荧光体的制造方法,在本申请之前提出了例如以规定的摩尔比混合氮化硅(Si3N4)、氮化铝(AlN)、氧化铕(Eu2O3),再在1个大气压(0.1MPa)的氮气中在1700℃的温度下保持1小时,进而通过热压法进行烧成而制造的方法(例如参照专利文献1)。已报道过用该方法得到的激活了Eu离子的α型赛纶被450~500nm的蓝色光激发后,会成为发出550~600nm的黄色光的荧光体。但是,对于以紫外LED作为激发源的白色LED或等离子显示器等用途,不仅要求发出黄色光,还要求发出420nm~470nm的蓝色光或者500nm~550nm的绿色光的荧光体。
专利文献1:特开2002-363554号公报
发明内容
本发明的目的在于,提供与以往的稀土类激活赛纶荧光体相比具有多彩波长的发光特性的氧氮化物荧光体。
本发明人在这种情况下,针对含有光学活性元素(M)、La、Si、Al、N、O元素(其中,M为选自Mn、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu中的1种或者2种或2种以上的元素)的荧光体反复地进行了深入的研究,结果发现,具有特定的组成区域范围和结晶相的物质可以成为具有450nm左右的蓝色和540nm左右的绿色发光的荧光体。即,发现在La3Si8N11O4结晶相或者La3Si8-xAlxN11-xO4+x(其中,0<x≤4)结晶相中,添加M(其中,M为选自Mn、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu中的1种或者2种或2种以上的元素)作为发光中心的结晶可以成为具有蓝色或绿色的发光的荧光体。
La3Si8N11O4结晶相是在高温下烧成接近La2O3-2Si3N4组成的组合物时所生成的结晶,由M.Mitomo等人完成了合成以及利用X射线衍射赋予结晶指数,其详细情况在本申请前已经在学术文献等中详细报道过(参照非专利文献1)。
此后,R.K.Harris等人提出,该结晶的正确组成为La3Si8N11O4,在本申请前的相关学术文献(参照非专利文献2)中详细地报道了其详细情况(参照非专利文献2)。
另外,La3Si8-xAlxN11-xO4+x结晶相是在La3Si8N11O4结晶中含有Al和O的固溶体,由Jekabs Grins等人完成合成和结构解析,其详细情况在本申请前的学术文献(参照非专利文献3)等中详细报道过。
非专利文献1:M.Mitomo等4人《Journal of Materials Science》,1982年、17卷、2359~2364页
非专利文献2:R.K.Harris等3人《Chemical Materials》,1992年、4卷、260~267页
非专利文献3:Jekabs Grins等4人《Journal of Materials Chemistry》,2001年、11卷、2358~2362页
总之,由于La3Si8N11O4结晶或者La3Si8-xAlxN11-xO4+x结晶相自身是在氮化硅的烧结研究过程中被确认的,关于耐热特性的研究报道,迄今为止主要针对用作荧光体还没有被研究过。关于La3Si8N11O4结晶或者La3Si8-xAlxN11-xO4+x结晶相可以用作被紫外线、可见光和电子射线激发后具有高辉度的红色发光的荧光体,系本发明人首次发现。
并且,进一步发展了该认识,结果发现,通过采用下述(1)~(13)所记载的构成,在特定波长区域存在辉度特性优异的特有发光现象。
本发明是基于上述认识进行一系列研究的结果,由此成功地提供了可高辉度发光的氧氮化物荧光体及使用其的发光器具。即,其构成如下所述。
(1)氧氮化物荧光体,其特征在于,含有用一般式La3Si8N11O4表示的结晶相作为主成分,并且其中含有光学活性元素(M)作为发光中心成分。
(2)上述(1)所记载的氧氮化物荧光体,其特征在于,所述光学活性元素(M)由选自Mn、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu中的1种或者2种或2种以上的元素组成。
(3)氧氮化物荧光体,其特征在于,含有用一般式La3Si8-xAlxN11-xO4+x(其中,0<x≤4)表示的结晶相作为主成分,并且其中含有光学活性元素(M)作为发光中心成分。
(4)上述(3)所记载的氧氮化物荧光体,其特征在于,所述光学活性元素(M)由选自Mn、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu中的1种或者2种或2种以上的元素组成。
(5)上述(4)所记载的氧氮化物荧光体,其特征在于,将x设定在0<x≤2的范围。
(6)上述(1)~(5)中的任意一项所记载的氧氮化物荧光体,其特征在于,作为所述光学活性元素(M)至少含有Ce。
(7)上述(1)~(6)中的任意一项所记载的氧氮化物荧光体,其特征在于,至少含有Tb。
(8)氧氮化物荧光体,其特征在于,含有光学活性元素(M)、La、Si、AI、N、O元素(其中,M为选自Mn、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu中的1种或者2种或2种以上的元素),由组成式MaLabSicAldNeOf(式中a+b=3)表示,并且其组成满足以下全部条件:
0.00001≤a≤2.5………………(i)
4≤c≤10 ……………………(ii)
0≤d≤4 ……………………(iii)
7≤e≤14 ……………………(iV)
2≤f≤8 ……………………(V)。
(9)上述(8)所记载的氧氮化物荧光体,其特征在于,将d的值设定为d=0。
(10)上述(8)或者(9)中的任意一项所记载的氧氮化物荧光体,其特征在于,将c、e、f的值分别设定为c=8、e=11和f=4。
(11)上述(8)~(10)中的任意一项所记载的氧氮化物荧光体,其特征在于,作为M成分选定Ce。
(12)上述(8)~(10)中的任意一项所记载的氧氮化物荧光体,其特征在于,作为所述光学活性元素(M)选定Tb。
(13)上述(1)~(12)中的任意一项所记载的氧氮化物荧光体,其特征在于,由La3Si8N11O4结晶相或者La3Si8-xAlxN11-xO4+x(其中,0<x≤4)结晶相与其他结晶相或者非结晶相的混合物构成,La3Si8N11O4结晶相或者La3Si8-xAlxN11-xO4+x结晶相的含量为大于等于50质量%。
(14)照明器具,由发光光源和荧光体构成,其特征在于,至少使用上述(1)~(13)中的任意一项所记载的荧光体。
(15)上述(14)所记载的照明器具,其特征在于,所述发光光源为发出330~420nm波长的光的LED。
(16)上述(14)或者(15)中的任意一项所记载的照明器具,其特征在于,所述发光光源为发出330~420nm波长的光的LED,通过使用上述(1)~(13)中的任意一项所记载的荧光体、基于330~420nm的激发光会发出520nm~570nm波长的光的绿色荧光体以及基于330~420nm的激发光会发出570nm~700nm的光的红色荧光体,混合红、绿、蓝色的光而发出白色光。
(17)上述(14)或者(15)中的任意一项所记载的照明器具,其特征在于,该发光光源为发出330~420nm波长的光的LED,通过使用上述(1)~(13)中的任意一项所记载的荧光体以及基于330~420nm的激发光会发出550nm~600nm波长的光的黄色荧光体,混合黄色和蓝色的光而发出白色光。
(18)上述(16)所记载的照明器具,其特征在于,所述绿色荧光体为固溶有Eu的β-赛纶。
(19)上述(16)所记载的照明器具,其特征在于,所述红色荧光体为固溶有Eu的CaAlSiN3。
(20)上述(17)所记载的照明器具,其特征在于,所述黄色荧光体为固溶有Eu的Ca-α赛纶。
(21)图像显示装置,由激发源和荧光体构成,其特征在于,至少使用上述(1)~(13)中的任意一项所记载的荧光体。
(22)上述(21)所记载的图像显示装置,其特征在于,图像显示装置为荧光显示管(VFD)、场致发射显示器(FED)、等离子体显示板(PDP)、阴极射线管(CRT)中的任意一者。
采用本发明提供的上述特有构成所形成的氧氮化物荧光体,由基础结晶和光学活性元素M构成。如果不含有M,仅仅有基础结晶(称为母结晶),则不会发光。当形成如下结构的任意一种的状态时,发出荧光的特性显著,所述结构为在用La3Si8N11O4或者La3Si8-xAlxN11-xO4+x(其中,0<x≤4=表示的基础结晶相中,光学活性成分(M)与该结晶的部分成分置换并固溶的结构,或者侵入该结晶空间内并固溶的结构。在此,该基础结晶(母结晶)会:(i)吸收激发光而向M传送能量;(ii)使M周围的电子状态变化而影响发光色或发光强度。荧光体由于上述两者协同作用而发光,因此其发光特性由母结晶和激活元素的组合来决定、支配。本发明的荧光体与以往的赛纶荧光体相比,具有显示出高的辉度,且暴露于激发源下时材料劣化、荧光体的辉度降低少这样的特性,适用于VFD、FED、PDP、CRT、白色LED等,由于在该领域中的材料设计方面提供了新的有用材料,因此其意义重大,期待着对产业的发展发挥重要作用。
附图说明
图1为本发明(实施例1)的氧氮化物的激发和发光光谱;
图2为本发明(实施例2)的氧氮化物的激发和发光光谱;
图3为本发明的照明器具(LED照明器具)的简要图;
图4为本发明的图像显示装置(等离子显示板)的简要图。
符号说明
1.本发明的红色荧光体(实施例1)和黄色荧光体的混合物,或者本发明的红色荧光体(实施例1)、蓝色荧光体和绿色荧光体的混合物
2.LED芯片
3、4.导电性端子
5.引线接合器
6.树脂层
7.容器
8.本发明的蓝色荧光体(实施例1)
9.绿色荧光体
10.红色荧光体
11、12、13.紫外线发光单元
14、15、16、17.电极
18、19.介电体层
20.保护层
21、22.玻璃基板
具体实施方式
本发明的荧光体含有由一般式La3Si8N11O4或者La3Si8-xAlxN11-xO4+x(其中,0<x≤4)表示的结晶相或者这些结晶相的固溶体作为主成分。本发明中,从荧光发光的角度考虑,作为该氧氮化物荧光体的构成成分的La3Si8N11O4或者La3Si8-xAlxN11-xO4+x相优选高纯度且含有极多量,并且尽可能由单相构成。但是,在特性不降低的范围内也可以由与其他结晶相或者非结晶相的混合物构成。
此时,La3Si8N11O4或者La3Si8-xAlxN11-xO4+x相的含量大于等于50质量%时可以得到高的辉度,因此优选。在本发明中,对于主成分的范围,La3Si8N11O4或者La3Si8-xAlxN11-xO4+x相的含量至少大于等于50质量%。进而,也可以将具有与La3Si8N11O4结晶相同的晶体结构的固溶体作为主成分。作为固溶体,可举出La的一部分被Mn、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu等金属置换的固溶体,Si的一部分被Al等置换的固溶体,N的一部分被氧置换的固溶体等。La3Si8-xAlxN11-xO4+x相是Si的一部分置换成Al、N的一部分置换成O的固溶体。作为表示固溶量的参数的x值为0<x≤4时,会生成稳定的La3Si8-xAlxN11-xO4+x相,特别是0<x≤2时可以得到具有高辉度的荧光体。进而,这些元素的置换不仅包括置换1种,也包括同时置换2种或2种以上的元素。
通过以La3Si8N11O4或者La3Si8-xAlxN11-xO4+x相作为母结晶,并使M元素(其中,M为选自Mn、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu中的1种或者2种或2种以上的元素)固溶到La3Si8N11O4或者La3Si8-xAlxN11-xO4+x母体中,这些元素起到发光中心的作用,从而实现荧光特性。在M元素中,Ce的蓝色的发光特性特别优异;Tb的绿色的发光特性特别优异。
本发明中,只要是La3Si8N11O4或者La3Si8-xAlxN11-xO4+x相的结晶或其固溶体即可,组成的种类没有特别限定,不过,在下面的组成中,La3Si8N11O4或者La3Si8-xAlxN11-xO4+x相的含量高,可以得到辉度高的荧光体。
含有M、La、Si、Al、N、O元素(其中,M为选自Mn、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu中的1种或者2种或2种以上的元素),其组成由组成式MaLabSicAldNeOf(式中a+b=3)表示。组成式是构成该物质的原子数的比,对a、b、c、d、e、f乘以任意数后的物质也是同一组成。从而,在本发明中按a+b=3而重新计算a、b、c、d、e、f,确定出以下的条件。
在本发明中,a、c、d、e、f的值是从全部满足以下条件的值中选择:
0.00001≤a≤2.5………………(i)
4≤c≤10 ……………………(ii)
0≤d≤4 ……………………(iii)
7≤e≤14 ……………………(iV)
2≤f≤8 ……………………(V)。
这里,a表示成为发光中心的元素的添加量,c、d、e、f表示从La3Si8N11O4组成的偏移。
a表示成为发光中心的元素M的添加量,可以使荧光体中的M与(M+La)的原子数的比M/(M+La)乘以3的数值为0.00001~2.5。3×M/(M+La)值小于0.00001时,由于成为发光中心的M数少,因此发光辉度会降低。3×M/(M+La)比值大于2.5时,由于M离子间的干涉,会产生浓度消光,从而辉度会降低。
c值为Si的含量,其为用4≤c≤10表示的量。La3Si8N11O4结晶的场合,可以优选c=8。La3Si8-xAlxN11-xO4+x结晶的场合,可以优选c=8-d的值。c值如果在该数值范围以外,则由于不会生成稳定的La3Si8N11O4或者La3Si8-xAlxN11-xO4+x结晶相,发光强度会降低。
d值为Al的含量,其为用0≤d≤4表示的量。La3Si8N11O4结晶的场合,可以优选d=0。La3Si8-xAlxN11-xO4+x结晶的场合,可以优选0<d≤2的值。d值如果在该数值范围以外,则由于不会生成稳定的La3Si8N11O4或者La3Si8-xAlxN11-xO4+x相,发光强度会降低。
e值为N的含量,其为用7≤e≤14表示的量。La3Si8N11O4结晶的场合,可以优选e=11。La3Si8-xAlxN11-xO4+x结晶的场合,可以优选e=11-d的值。e值如果在该数值范围以外,则由于不会生成稳定的La3Si8N11O4或者La3Si8-xAlxN11-xO4+x相,发光强度会降低。
f值为O的含量,其为用2≤f≤8表示的量。La3Si8N11O4结晶的场合,可以优选f=4。La3Si8-xAlxN11-xO4+x结晶的场合,可以优选f=4+d的值。f值如果在该数值范围以外,则由于不会生成稳定的La3Si8N11O4或者La3Si8-xAlxN11-xO4+x相,发光强度会降低。
本发明的荧光体,其激发光谱和荧光光谱根据组成而不同,通过对其适宜地进行选择组合,可以设定具有各种发光光谱的荧光体。其方式只要设定成基于用途所需要的光谱即可。其中,在La3Si8N11O4相中按0.0001≤3×Ce/(Ce+La)≤2.5的组成添加Eu后的荧光体,在450nm左右的蓝色区域显示出高的发光特性。另外,在La3Si8N11O4相中按0.0001≤3×Tb/(Tb+La)≤2.5的组成添加Tb后的荧光体,在540nm左右的绿色区域显示出高的发光特性。
本发明中,作为结晶相优选由La3Si8N11O4或者La3Si8-xAlxN11-xO4+x相的单相构成,不过,在特性不降低的范围内,也可以由与其他结晶相或者非结晶相的混合物构成。此时,La3Si8N11O4或者La3Si8-xAlxN11-xO4+x相的含量大于等于50质量%时可以得到高的辉度,因此优选。在本发明中,对于主成分的范围,La3Si8N11O4或者La3Si8-xAlxN11-xO4+x相的含量至少大于等于50质量%。La3Si8N11O4或者La3Si8-xAlxN11-xO4+x相的含量的比例可以通过进行X射线衍射测定,由La3Si8N11O4或者La3Si8-xAlxN11-xO4+x相与其他结晶相的各相的最强峰的强度比来求出。
将本发明的荧光体用于由电子射线激发的用途时,通过混合具有导电性的无机物质作为其他结晶相或者非结晶相,可以对荧光体赋予导电性。作为具有导电性的无机物质,可举出含有选自Zn、Al、Ga、In、Sn中的1种或者2种或2种以上元素的氧化物、氧氮化物、氮化物或者它们的混合物。
由本发明的制造方法得到的氧氮化物荧光体,与以往的赛纶或者氧氮化物荧光体相比,显示出高波长的发光,暴露于激发源下时荧光体的辉度降低少,因此是适用于VFD、FED、PDP、CRT、白色LED等的氧氮化物荧光体。
本发明的照明器具至少使用发光光源和本发明的荧光体而构成。作为照明器具有LED照明器具、荧光灯等。对于LED照明器具,可以使用本发明的荧光体,利用像特开平5-152609、特开平7-99345、专利公报第2927279号等中记载的公知的方法来制造。此时,发光光源优选会发出100~500nm波长的光的光源,尤其优选330~420nm的紫外(或者紫)LED发光元件。
作为这些发光元件,有由GaN或者InGaN等氮化物半导体构成的发光光源,通过调整组成,可以成为发出规定波长的光的发光光源。
除了在照明器具中单独使用本发明的荧光体的方法以外,通过与具有其他发光特性的荧光体并用,可以构成发出期望色彩的照明器具。作为其一例,存在330~420nm的紫外LED或者紫LED发光元件、被该波长激发后会发出520nm~570nm波长的光的绿色荧光体、会发出570nm~700nm的光的红色荧光体以及本发明的荧光体的组合。作为这种绿色荧光体,可举出BaMgAl10O17:Eu、Mn或者β-赛纶:Eu;作为红色荧光体,可举出Y2O3:Eu或者CaAlSiN3:Eu。其中,β-赛纶:Eu和CaAlSiN3:Eu,母结晶为氮化物或者氧氮化物,结晶特性与本发明的荧光体相似。因此,发光强度的温度变化特性相似,在与本发明的荧光体混合使用时优先选用。对于该构成,在LED发出的紫外线照射到荧光体上时,会发出红、绿、蓝三色光,通过该组合形成白色的照明器具。
作为其他方法,存在330~420nm的紫外LED或者紫LED发光元件、被该波长激发后在550nm~600nm波长具有发光峰的黄色荧光体以及本发明的荧光体的组合。作为这种黄色荧光体,可举出在专利公报第2927279号中记载的(Y、Gd)2(Al、Ga)5O12:Ce和特开2002-363554中记载的α-赛纶:Eu。其中,固溶有Eu的Ca-α-赛纶的发光辉度特别高,因此优选。这种构成,LED发出的紫外或者紫光照射到荧光体上时,会发出蓝、黄双色光,这些光被混合而形成白色或者带有红色的电灯泡色的照明器具。
本发明的图像显示装置至少由激发源和本发明的荧光体构成,有荧光显示管(VFD)、场致发射显示器(FED)、等离子体显示板(PDP)、阴极射线管(CRT)等。本发明的荧光体被确认用100~190nm的真空紫外线、190~380nm的紫外线、电子射线等激发后会发光,通过这些激发源和本发明的荧光体的组合可以构成如上所述的图像显示装置。
下面,通过以下所述的实施例更详细地说明本发明,这些实施例不过是用于帮助容易地理解本发明,本发明并不限于这些实施例。
实施例1
原料粉末使用平均粒径0.5μm、氧含量0.93重量%、α型含量92%的氮化硅粉末,纯度99.9%的氧化镧粉末,纯度99.9%的氧化铈粉末。
为了得到用组成式Ce0.57La2.43Si9N12O4.5表示的化合物(表1中示出原料粉末的混合组成,表2中示出组成参数),称量46.01重量%的氮化硅粉末、43.27重量%的氧化镧粉末以及10.72重量%的氧化铈粉末,通过添加了己烷的球磨机混合进行2小时混合后,通过旋转蒸发器进行干燥。使用金属模具对得到的混合物施加20MPa的压力而成形,形成直径12mm、厚度5mm的成形体。
将该成形体放入氮化硼制的坩埚中,并放置在石墨电阻加热方式的电炉中。烧成操作按如下所述进行:首先,通过扩散泵使烧成氛围为真空;再以每小时500℃的速度从室温加热至800℃,在800℃导入纯度为99.999体积%的氮气,使压力为1MPa;进而以每小时500℃升温至1750℃,在1750℃保持4小时。烧成后,通过如下所述的步骤鉴别得到的烧结体的构成结晶,结果判定为La3Si8N11O4相。首先使用玛瑙研钵将合成的试样粉碎成粉末,接着使用Cu的Kα射线进行粉末X射线衍射测定。其结果是,得到的图表显示出与非专利文献1中报道过的X射线衍射结果相同的图案,从而判定为La3Si8N11O4相。用发出波长365nm的光的灯照射该粉末,结果确认发出蓝色光。
使用荧光分光光度计测定该粉末的发光光谱和激发光谱,结果得知,该粉末是在通过在371nm具有激发光谱的峰值的371nm的紫外光激发所产生的发光光谱中、在424nm的蓝色光具有峰值的荧光体(图1)。峰的发光强度为1239计数(count)。这里,计数值根据测定装置和条件而变化,因此单位是任意单位。即,只能在同一条件下测定的本实施例和比较例内进行比较。
用具有阴极发光(CL)检测器的SEM观察利用电子射线激发的该粉末的发光特性。该装置是通过使照射电子射线所产生的可见光经过光纤诱导至设置在装置外的光电倍增器,可以测定用电子射线激发后发出的光的发光光谱的装置。可以确认该荧光体被电子射线激发后会显示430nm波长的蓝色发光。
实施例2~10
除了与实施例1同样的氮化硅粉末、氧化镧粉末、氧化铈粉末以外,原料粉末还使用纯度99.9%的氧化铕粉末、纯度99.9%的氧化铽粉末、纯度99.99%的氧化铝粉末、纯度99.9%的氮化镧粉末。除了表1、表2所示的组成外,按照与实施例1同样的方法制作氧氮化物粉末。粉碎合成的粉末,进行X射线衍射测定,结果可以确认,在实施例2~8中,所有的组成均为La3Si8N11O4相。对于实施例9和10,确认为La3Si8-xAlxN11-xO4+x相。进而,如表3的实施例2~10所示,可以得到被紫外线激发后发出可见光的辉度高的荧光体。特别是,添加了Ce的物质得到优异的蓝色荧光体,添加了Tb的物质得到优异的绿色荧光体。
以上的实施例的结果概括示于表1~表3中。
表1表示实施例的原料粉末的混合组成。
表2表示实施例的原料粉末的设计组成的参数。
表3表示实施例的激发光谱和发光光谱的波长和强度。
表1
Si3N4 | La2O3 | CeO2 | Eu2O3 | Tb4O7 | Al2O3 | AlN | LaN | |
实施例1 | 46.01 | 43.27 | 10.72 | 0 | 0 | 0 | 0 | 0 |
实施例2 | 45.59 | 42.87 | 0 | 0 | 11.54 | 0 | 0 | 0 |
实施例3 | 45.9 | 43.16 | 0 | 10.94 | 0 | 0 | 0 | 0 |
实施例4 | 46.26 | 53.17 | 0.57 | 0 | 0 | 0 | 0 | 0 |
实施例5 | 46.13 | 48.21 | 5.66 | 0 | 0 | 0 | 0 | 0 |
实施例6 | 45.58 | 26.46 | 27.96 | 0 | 0 | 0 | 0 | 0 |
实施例7 | 45.18 | 10.49 | 44.33 | 0 | 0 | 0 | 0 | 0 |
实施例8 | 43.28 | 40.2 | 10.62 | 0 | 0 | 0 | 0 | 5.9 |
实施例9 | 37.81 | 45.15 | 11.93 | 0 | 0 | 1.96 | 3.16 | 0 |
实施例10 | 37.42 | 44.69 | 0 | 0 | 0 | 1.94 | 3.12 | 0 |
表2
参数 | ||||||
a | b | c | d | e | f | |
实施例1 | 0.57 | 2.43 | 9 | 0 | 12 | 4.5 |
实施例2 | 0.57 | 2.43 | 9 | 0 | 12 | 4.5 |
实施例3 | 0.57 | 2.43 | 9 | 0 | 12 | 4.5 |
实施例4 | 0.03 | 2.97 | 9 | 0 | 12 | 4.5 |
实施例5 | 0.3 | 2.7 | 9 | 0 | 12 | 4.5 |
实施例6 | 1.5 | 1.5 | 9 | 0 | 12 | 4.5 |
实施例7 | 2.4 | 0.6 | 9 | 0 | 12 | 4.5 |
实施例8 | 0.533 | 2.467 | 8 | 0 | 11 | 4 |
实施例9 | 0.6 | 2.4 | 7 | 1 | 10 | 5 |
实施例10 | 0.6 | 2.4 | 7 | 1 | 10 | 5 |
表3
发光 | 发光 | |||
波长 | 强度 | 波长 | 强度 | |
nm | 任意强度 | nm | 任意强度 | |
实施例1 | 424 | 1239 | 371 | 1242 |
实施例2 | 542 | 1124 | 256 | 1122 |
实施例3 | 501 | 32 | 428 | 33 |
实施例4 | 425 | 809 | 370 | 790 |
实施例5 | 431 | 1421 | 372 | 1415 |
实施例6 | 433 | 1720 | 372 | 1733 |
实施例7 | 435 | 1056 | 374 | 1049 |
实施例8 | 436 | 2013 | 372 | 2002 |
实施例9 | 430 | 1884 | 365 | 1887 |
实施例10 | 545 | 1911 | 258 | 1881 |
下面,针对使用了本发明的由氮化物构成的荧光体的照明器具进行说明。图3表示作为照明器具的白色LED的简要构成图。形成如下结构:作为发光元件使用405nm的紫LED2,将本发明的实施例1的荧光体和具有Ca0.75Eu0.25Si8.625Al3.375O1.125N14.875的组成的Ca-α-赛纶:Eu系的黄色荧光体分散在树脂层中,并覆盖在LED2上。在导电性端子流通电流时,该LED2会发出405nm的光,蓝色荧光体和黄色荧光体被该光激发后发出蓝色和黄色的光,黄色和蓝色被混合而形成发出白色光的照明装置。
说明通过与上述配合不同的配合设计而制作的照明器具。形成如下结构:首先,作为发光元件使用380nm的紫外LED,再将本发明的实施例1的荧光体、绿色荧光体(β-赛纶:Eu)以及红色荧光体(CaAlSiN3:Eu)分散在树脂层中,并覆盖在紫外LED上。在导电性端子流通电流时,LED会发出380nm的光,红色荧光体、绿色荧光体和蓝色荧光体被该光激发后发出红色、绿色和蓝色的光,这些光被混合,形成发出白色光的照明装置。
下面,针对使用了本发明的荧光体的图像显示装置的设计例进行说明。图4是作为图像显示装置的等离子显示板的原理简要图。本发明的实施例1的蓝色荧光体、绿色荧光体(Zn2SiO4:Mn)和红色荧光体(CaAlSiN3:Eu)分别被涂布在单元11、12、13的内面上。对电极14、15、16、17通电时,在单元中由于Xe放电会产生真空紫外线,荧光体由此被激发,发出红、绿、蓝色的可见光,该光经保护层20、介电体层19、玻璃基板22从外侧被观察到,从而可以发挥图像显示的功能。
如上所述,本发明的荧光体由于照射电子射线时会发出蓝色光,因此可以用作CRT或FED用的荧光体。
产业上利用的可能性
本发明所提供的氧氮化物荧光体与以往的赛纶荧光体相比,显示出高的辉度,暴露于激发源时材料劣化、荧光体的辉度降低少,因此可适用于VFD、FED、PDP、CRT、白色LED等。在该领域中的材料设计方面,可以期待大量被应用。
Claims (22)
1.氧氮化物荧光体,其特征在于,含有用一般式La3Si8N11O4表示的结晶相作为主成分,并且其中含有光学活性元素(M)作为发光中心成分。
2.权利要求1所记载的氧氮化物荧光体,其特征在于,所述光学活性元素(M)由选自Mn、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu中的1种或者2种或2种以上的元素组成。
3.氧氮化物荧光体,其特征在于,含有用一般式La3Si8-xAlxN11-xO4+x(其中,0<x≤4)表示的结晶相作为主成分,并且其中含有光学活性元素(M)作为发光中心成分。
4.权利要求3所记载的氧氮化物荧光体,其特征在于,所述光学活性元素(M)由选自Mn、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu中的1种或者2种或2种以上的元素组成。
5.权利要求4所记载的氧氮化物荧光体,其特征在于,将x设定在0<x≤2的范围。
6.权利要求1~5中的任意一项所记载的氧氮化物荧光体,其特征在于,至少含有Ce。
7.权利要求1~6中的任意一项所记载的氧氮化物荧光体,其特征在于,至少含有Tb。
8.氧氮化物荧光体,其特征在于,含有M、La、Si、Al、N、O元素(其中,M为选自Mn、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu中的1种或者2种或2种以上的元素),用组成式MaLabSicAldNeOf(式中a+b=3)表示,并且其组成满足以下全部条件:
0.00001≤a≤2.5………………(i)
4≤c≤10……………………(ii)
0≤d≤4……………………(iii)
7≤e≤14……………………(iV)
2≤f≤8……………………(V)。
9.权利要求8所记载的氧氮化物荧光体,其特征在于,将d的值设定为d=0。
10.权利要求8或者9中的任意一项所记载的氧氮化物荧光体,其特征在于,将c、e、f的值分别设定为c=8、e=11和f=4。
11.权利要求8~10中的任意一项所记载的氧氮化物荧光体,其特征在于,作为M成分选定Ce。
12.权利要求8~10中的任意一项所记载的氧氮化物荧光体,其特征在于,作为M成分选定Tb。
13.权利要求1~12中的任意一项所记载的氧氮化物荧光体,其特征在于,由La3Si8N11O4结晶相或者La3Si8-xAlxN11-xO4+x(其中,0<x≤4)结晶相与其他结晶相或者非结晶相的混合物构成,La3Si8N11O4结晶相或者La3Si8-xAlxN11-xO4+x结晶相的含量为大于等于50质量%。
14.照明器具,由发光光源和荧光体构成,其特征在于,其中至少使用了权利要求1~13中的任意一项所记载的荧光体。
15.权利要求14所记载的照明器具,其特征在于,所述发光光源为发出330~420nm波长的光的LED。
16.权利要求14或者15中的任意一项所记载的照明器具,其特征在于,所述发光光源为发出330~420nm波长的光的LED,通过使用权利要求1~13中的任意一项所记载的荧光体、基于330~420nm的激发光会发出520nm~570nm波长的光的绿色荧光体以及基于330~420nm的激发光会发出570nm~700nm的光的红色荧光体,混合红、绿、蓝色的光而发出白色光。
17.权利要求14或者15中的任意一项所记载的照明器具,其特征在于,该发光光源为发出330~420nm波长的光的LED,通过使用权利要求1~13中的任意一项所记载的荧光体以及基于330~420nm的激发光会发出550nm~600nm波长的光的黄色荧光体,混合黄色和蓝色的光而发出白色光。
18.权利要求16所记载的照明器具,其特征在于,所述绿色荧光体为固溶有Eu的β-赛纶。
19.权利要求16所记载的照明器具,其特征在于,所述红色荧光体为固溶有Eu的CaAlSiN3。
20.权利要求17所记载的照明器具,其特征在于,所述黄色荧光体为固溶有Eu的Ca-α赛纶。
21.图像显示装置,由激发源和荧光体构成,其特征在于,其中至少使用了权利要求1~13中的任意一项所记载的荧光体。
22.权利要求21所记载的图像显示装置,其特征在于,图像显示装置为荧光显示管(VFD)、场致发射显示器(FED)、等离子体显示板(PDP)、阴极射线管(CRT)中的任意一者。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP346013/2003 | 2003-10-03 | ||
JP2003346013A JP4834827B2 (ja) | 2003-10-03 | 2003-10-03 | 酸窒化物蛍光体 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1839192A true CN1839192A (zh) | 2006-09-27 |
CN100516167C CN100516167C (zh) | 2009-07-22 |
Family
ID=34419486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800240599A Active CN100516167C (zh) | 2003-10-03 | 2004-09-30 | 氧氮化物荧光体和发光器具 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7470378B2 (zh) |
JP (1) | JP4834827B2 (zh) |
KR (1) | KR101102301B1 (zh) |
CN (1) | CN100516167C (zh) |
DE (1) | DE112004001532B4 (zh) |
WO (1) | WO2005033247A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101679861B (zh) * | 2007-03-28 | 2012-11-21 | 国立大学法人广岛大学 | M-c-n-o系荧光体 |
CN103201213A (zh) * | 2010-08-04 | 2013-07-10 | 宇部兴产株式会社 | 硅氮化物磷光体用氮化硅粉末、利用该粉末的CaAlSiN3磷光体、利用该粉末的Sr2Si5N8 磷光体、利用该粉末的(Sr, Ca)AlSiN3 磷光体、利用该粉末的La3Si6N11磷光体和该磷光体的制造方法 |
CN104024375A (zh) * | 2012-05-31 | 2014-09-03 | 独立行政法人物质·材料研究机构 | 荧光体及其制备方法、发光装置及图像显示装置 |
CN104927858A (zh) * | 2015-07-02 | 2015-09-23 | 河北大学 | 一种在蓝光激发下发绿光的氮化物荧光材料及其制备方法和应用 |
CN102738369B (zh) * | 2007-05-30 | 2016-06-08 | 夏普株式会社 | 发光装置及图像显示装置 |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100493708B1 (ko) * | 2002-05-17 | 2005-06-03 | 박부규 | 면역활성 및 항암 효과 증진용 조성물 |
JP3837588B2 (ja) | 2003-11-26 | 2006-10-25 | 独立行政法人物質・材料研究機構 | 蛍光体と蛍光体を用いた発光器具 |
JP3931239B2 (ja) * | 2004-02-18 | 2007-06-13 | 独立行政法人物質・材料研究機構 | 発光素子及び照明器具 |
JP3921545B2 (ja) * | 2004-03-12 | 2007-05-30 | 独立行政法人物質・材料研究機構 | 蛍光体とその製造方法 |
JP4511885B2 (ja) * | 2004-07-09 | 2010-07-28 | Dowaエレクトロニクス株式会社 | 蛍光体及びled並びに光源 |
US7476337B2 (en) * | 2004-07-28 | 2009-01-13 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method for the same, and light source |
US7476338B2 (en) * | 2004-08-27 | 2009-01-13 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method for the same, and light source |
US8269410B2 (en) | 2005-03-18 | 2012-09-18 | Mitsubishi Chemical Corporation | Light-emitting device, white light-emitting device, illuminator, and image display |
JP4104013B2 (ja) | 2005-03-18 | 2008-06-18 | 株式会社フジクラ | 発光デバイス及び照明装置 |
WO2006101096A1 (ja) | 2005-03-22 | 2006-09-28 | National Institute For Materials Science | 蛍光体とその製造方法および発光器具 |
CN102226085B (zh) | 2005-03-22 | 2014-07-30 | 独立行政法人物质·材料研究机构 | 荧光体的制造方法 |
EP1878778A4 (en) * | 2005-03-31 | 2012-04-04 | Mitsubishi Chem Corp | FLUORESCENT SUBSTANCE, FLUORESCENT SUBSTANCE SHEET AND PROCESS FOR PRODUCING THE SAME, AND LUMINESCENT DEVICE USING SAID FLUORESCENT SUBSTANCE |
JP2006291035A (ja) * | 2005-04-11 | 2006-10-26 | Futaba Corp | 電子線励起蛍光発光素子 |
JP2007204730A (ja) * | 2005-09-06 | 2007-08-16 | Sharp Corp | 蛍光体及び発光装置 |
DE602006021342D1 (de) | 2005-12-08 | 2011-05-26 | Nat Inst For Materials Science | Leuchtstoff, herstellungsverfahren dafür sowie lumineszenzvorrichtung |
WO2007066733A1 (ja) | 2005-12-08 | 2007-06-14 | National Institute For Materials Science | 蛍光体とその製造方法および発光器具 |
TW200801158A (en) * | 2006-02-02 | 2008-01-01 | Mitsubishi Chem Corp | Complex oxynitride phosphor, light-emitting device using the same, image display, illuminating device, phosphor-containing composition and complex oxynitride |
US8057704B2 (en) | 2006-02-24 | 2011-11-15 | National Institute For Materials Science | Phosphor, method for producing same, and light-emitting device |
JP2007266579A (ja) * | 2006-02-28 | 2007-10-11 | Toshiba Lighting & Technology Corp | 発光装置 |
JP5378644B2 (ja) * | 2006-09-29 | 2013-12-25 | Dowaホールディングス株式会社 | 窒化物蛍光体または酸窒化物蛍光体の製造方法 |
WO2008084848A1 (ja) | 2007-01-12 | 2008-07-17 | National Institute For Materials Science | 蛍光体、その製造方法および発光器具 |
WO2008132954A1 (ja) * | 2007-04-18 | 2008-11-06 | Mitsubishi Chemical Corporation | 蛍光体及びその製造方法、蛍光体含有組成物、発光装置、照明装置、画像表示装置、並びに窒素含有化合物 |
US9279079B2 (en) | 2007-05-30 | 2016-03-08 | Sharp Kabushiki Kaisha | Method of manufacturing phosphor, light-emitting device, and image display apparatus |
EP2012343A3 (en) * | 2007-07-03 | 2010-09-08 | Fuji Jukogyo Kabushiki Kaisha | Light-emitting apparatus |
JP4413955B2 (ja) | 2007-07-19 | 2010-02-10 | 株式会社東芝 | 蛍光体および発光装置 |
EP2262816A4 (en) * | 2008-03-21 | 2012-02-29 | Nanogram Corp | SUBMICRONIC PHOSPHORUS PARTICLES BASED ON METAL SILICON NITRIDE OR METAL SILICON OXYNITRIDES AND METHODS OF SYNTHESIZING THESE PHOSPHORES |
KR101046046B1 (ko) * | 2008-12-22 | 2011-07-01 | 삼성엘이디 주식회사 | 백색 발광 장치 |
EP2408024A4 (en) * | 2009-03-10 | 2012-09-05 | Oceans King Lighting Science | WHITE LIGHT GENERATING METHOD AND LIGHTING DEVICE |
JP5544161B2 (ja) * | 2009-12-28 | 2014-07-09 | 三菱化学株式会社 | 蛍光体 |
US8946981B2 (en) | 2010-08-27 | 2015-02-03 | National Institute For Materials Science | Phosphor, lighting fixture, and image display device |
TWI531638B (zh) | 2011-11-07 | 2016-05-01 | 獨立行政法人物質 材料研究機構 | 螢光體及製造方法、使用螢光體之發光裝置及圖像顯示裝置 |
KR101877416B1 (ko) * | 2011-11-23 | 2018-07-11 | 엘지이노텍 주식회사 | 산질화물 형광체 및 그를 포함한 발광소자 패키지 |
EP2868730B1 (en) | 2012-06-27 | 2016-04-06 | National Institute for Materials Science | Phosphor, method for producing same, light emitting device, and image display device |
TW201404867A (zh) * | 2012-07-20 | 2014-02-01 | Formosa Epitaxy Inc | 一種氮氧化物螢光粉之組成物及其製造方法 |
KR101704942B1 (ko) | 2012-07-25 | 2017-02-08 | 코쿠리츠켄큐카이하츠호징 붓시쯔 자이료 켄큐키코 | 형광체, 그 제조 방법, 발광 장치 및 화상 표시 장치 |
KR102019501B1 (ko) | 2012-11-05 | 2019-09-06 | 엘지이노텍 주식회사 | 형광체 및 이를 구비한 발광 소자 |
EP2990457B1 (en) | 2013-04-25 | 2018-12-05 | National Institute for Materials Science | Phosphor, method for producing same, light-emitting device, and image display apparatus |
WO2014185415A1 (ja) | 2013-05-14 | 2014-11-20 | 独立行政法人物質・材料研究機構 | 蛍光体、その製造方法、発光装置、画像表示装置、顔料および紫外線吸収剤 |
RU2584205C2 (ru) * | 2014-06-10 | 2016-05-20 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Уральский федеральный университет имени первого Президента России Б.Н. Ельцина" | МАТЕРИАЛ ДЛЯ КОНВЕРСИИ ВАКУУМНОГО УЛЬТРАФИОЛЕТОВОГО ИЗЛУЧЕНИЯ В ИЗЛУЧЕНИЕ ВИДИМОГО ДИАПАЗОНА В ВИДЕ АМОРФНОЙ ПЛЕНКИ ОКСИДА КРЕМНИЯ SiO2Sx НА КРЕМНИЕВОЙ ПОДЛОЖКЕ |
JP6252396B2 (ja) * | 2014-07-31 | 2017-12-27 | 日亜化学工業株式会社 | 蛍光体およびそれを用いた発光装置ならびに蛍光体の製造方法 |
DE102016104875A1 (de) * | 2016-03-16 | 2017-09-21 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Blitzlichtbeleuchtung für ein tragbares Gerät |
EP3438228B1 (en) | 2016-03-28 | 2020-04-15 | National Institute for Materials Science | Phosphor, method for producing same, light emitting device, image display, pigment and ultraviolet light absorber |
JP6684412B1 (ja) | 2019-06-27 | 2020-04-22 | 国立研究開発法人物質・材料研究機構 | 蛍光体、その製造方法および発光装置 |
WO2022244523A1 (ja) | 2021-05-21 | 2022-11-24 | 国立研究開発法人物質・材料研究機構 | 蛍光体、その製造方法、発光素子および発光装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8501600A (nl) * | 1985-06-04 | 1987-01-02 | Philips Nv | Luminescerend scherm en lagedrukkwikdampontladingslamp voorzien van een dergelijk scherm. |
US6504179B1 (en) * | 2000-05-29 | 2003-01-07 | Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh | Led-based white-emitting illumination unit |
JP3668770B2 (ja) | 2001-06-07 | 2005-07-06 | 独立行政法人物質・材料研究機構 | 希土類元素を付活させた酸窒化物蛍光体 |
DE10133352A1 (de) * | 2001-07-16 | 2003-02-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
DE10146719A1 (de) * | 2001-09-20 | 2003-04-17 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
DE10147040A1 (de) * | 2001-09-25 | 2003-04-24 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
JP4207489B2 (ja) * | 2002-08-06 | 2009-01-14 | 株式会社豊田中央研究所 | α−サイアロン蛍光体 |
JP4072632B2 (ja) * | 2002-11-29 | 2008-04-09 | 豊田合成株式会社 | 発光装置及び発光方法 |
US7074346B2 (en) | 2003-02-06 | 2006-07-11 | Ube Industries, Ltd. | Sialon-based oxynitride phosphor, process for its production, and use thereof |
JP4052136B2 (ja) * | 2003-02-06 | 2008-02-27 | 宇部興産株式会社 | サイアロン系酸窒化物蛍光体およびその製造方法 |
JP2004277663A (ja) * | 2003-03-18 | 2004-10-07 | National Institute For Materials Science | サイアロン蛍光体とその製造方法 |
JP2004300247A (ja) * | 2003-03-31 | 2004-10-28 | Mitsubishi Chemicals Corp | 蛍光体及びそれを用いた発光装置、並びに照明装置 |
US20060049414A1 (en) * | 2004-08-19 | 2006-03-09 | Chandran Ramachandran G | Novel oxynitride phosphors |
-
2003
- 2003-10-03 JP JP2003346013A patent/JP4834827B2/ja not_active Expired - Lifetime
-
2004
- 2004-09-30 US US10/564,359 patent/US7470378B2/en active Active
- 2004-09-30 WO PCT/JP2004/014765 patent/WO2005033247A1/ja active Application Filing
- 2004-09-30 DE DE112004001532.4T patent/DE112004001532B4/de active Active
- 2004-09-30 CN CNB2004800240599A patent/CN100516167C/zh active Active
- 2004-09-30 KR KR1020067005621A patent/KR101102301B1/ko active IP Right Grant
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101679861B (zh) * | 2007-03-28 | 2012-11-21 | 国立大学法人广岛大学 | M-c-n-o系荧光体 |
CN102738369B (zh) * | 2007-05-30 | 2016-06-08 | 夏普株式会社 | 发光装置及图像显示装置 |
CN103201213A (zh) * | 2010-08-04 | 2013-07-10 | 宇部兴产株式会社 | 硅氮化物磷光体用氮化硅粉末、利用该粉末的CaAlSiN3磷光体、利用该粉末的Sr2Si5N8 磷光体、利用该粉末的(Sr, Ca)AlSiN3 磷光体、利用该粉末的La3Si6N11磷光体和该磷光体的制造方法 |
US9023240B2 (en) | 2010-08-04 | 2015-05-05 | Ube Industries, Ltd. | Silicon nitride powder for siliconnitride phosphor, CaAlSiN3 phosphor using same, Sr2Si5N8 phosphor using same, (Sr, Ca)AlSiN3 phosphor using same, La3Si6N11 Phosphor using same, and methods for producing the phosphors |
CN103201213B (zh) * | 2010-08-04 | 2016-04-13 | 宇部兴产株式会社 | 硅氮化物磷光体用氮化硅粉末、利用该粉末的CaAlSiN3磷光体、利用该粉末的Sr2Si5N8磷光体、利用该粉末的(Sr,Ca)AlSiN3磷光体、利用该粉末的La3Si6N11磷光体和该磷光体的制造方法 |
CN104024375A (zh) * | 2012-05-31 | 2014-09-03 | 独立行政法人物质·材料研究机构 | 荧光体及其制备方法、发光装置及图像显示装置 |
CN104024375B (zh) * | 2012-05-31 | 2017-05-24 | 国立研究开发法人物质·材料研究机构 | 荧光体及其制备方法、发光装置及图像显示装置 |
CN104927858A (zh) * | 2015-07-02 | 2015-09-23 | 河北大学 | 一种在蓝光激发下发绿光的氮化物荧光材料及其制备方法和应用 |
Also Published As
Publication number | Publication date |
---|---|
JP2005112922A (ja) | 2005-04-28 |
US7470378B2 (en) | 2008-12-30 |
KR101102301B1 (ko) | 2012-01-03 |
DE112004001532T5 (de) | 2006-06-14 |
KR20060115354A (ko) | 2006-11-08 |
JP4834827B2 (ja) | 2011-12-14 |
US20060192178A1 (en) | 2006-08-31 |
WO2005033247A1 (ja) | 2005-04-14 |
DE112004001532B4 (de) | 2020-10-01 |
CN100516167C (zh) | 2009-07-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1839192A (zh) | 氧氮化物荧光体和发光器具 | |
CN1839193B (zh) | 氧氮化物荧光体和发光器具 | |
CN101018841B (zh) | 荧光体及其制造方法和发光器具 | |
CN100526421C (zh) | 荧光体及其制造方法、照明器具以及图像显示装置 | |
CN101146890B (zh) | 荧光体及其制造方法以及发光器具 | |
TWI399422B (zh) | 螢光體、其製造方法及照明器具 | |
JP4565141B2 (ja) | 蛍光体と発光器具 | |
JP5110518B2 (ja) | 蛍光体とその製造方法および照明器具 | |
CN101146891B (zh) | 荧光体及其制造方法 | |
JP6572373B1 (ja) | β型サイアロン蛍光体の製造方法 | |
JP2007070445A (ja) | 発光装置 | |
JP2007204730A (ja) | 蛍光体及び発光装置 | |
JP2007141855A (ja) | 蛍光体を用いた照明器具および画像表示装置 | |
TWI458809B (zh) | 螢光體、其製造方法及發光裝置 | |
JP2018109080A (ja) | 緑色蛍光体、発光素子及び発光装置 | |
CN102453484B (zh) | 荧光体及发光装置 | |
TWI487774B (zh) | 螢光體、其製造方法及發光裝置 | |
JP2009227714A (ja) | 蛍光体および発光装置 | |
CN103881710B (zh) | 荧光体与发光装置 | |
TWI450949B (zh) | 螢光體、其製造方法及發光裝置 | |
JP2018109079A (ja) | 緑色蛍光体、発光素子及び発光装置 | |
JP2018109077A (ja) | 緑色蛍光体、発光素子及び発光装置 | |
JP2018109082A (ja) | 緑色蛍光体、発光素子及び発光装置 | |
CN102517000A (zh) | 一种碱土族氮化物荧光粉及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |