CN1838388A - 一种获得洁净区的硅片快速热处理工艺方法及其产品 - Google Patents
一种获得洁净区的硅片快速热处理工艺方法及其产品 Download PDFInfo
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- CN1838388A CN1838388A CN 200510056427 CN200510056427A CN1838388A CN 1838388 A CN1838388 A CN 1838388A CN 200510056427 CN200510056427 CN 200510056427 CN 200510056427 A CN200510056427 A CN 200510056427A CN 1838388 A CN1838388 A CN 1838388A
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- silicon chip
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 91
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 91
- 239000010703 silicon Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 72
- 230000008569 process Effects 0.000 title claims abstract description 45
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000001301 oxygen Substances 0.000 claims abstract description 72
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 72
- 238000005516 engineering process Methods 0.000 claims abstract description 30
- 238000012545 processing Methods 0.000 claims abstract description 11
- 238000001556 precipitation Methods 0.000 claims description 54
- 238000000137 annealing Methods 0.000 claims description 38
- 230000014759 maintenance of location Effects 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 14
- 239000008246 gaseous mixture Substances 0.000 claims description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 239000003595 mist Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 238000007796 conventional method Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- -1 wherein Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 13
- 239000012535 impurity Substances 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005247 gettering Methods 0.000 description 6
- 230000006911 nucleation Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 238000011982 device technology Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
RTA工艺 | 无 | Ar/H2/NH3为保护气氛气氛1200℃保温15s降温速度:70℃/s | Ar/H2/NH3为保护气氛气氛1200℃,保温30s降温速度:70℃/s | Ar/H2/NH3为保护气氛气氛1200℃,保温50s降温速度:70℃/s |
COP密度(个/片) | 246 | 203 | 20 | 20 |
氧沉淀形核长大工艺 | 700℃保温4小时,氢气为保护气氛900℃保温16小时 | |||
间隙氧含量(ppma) | 18.6 | 16.4 | 18.6 | 18.6 |
氧沉淀密度(个/cm3) | 9.3×109 | 2×109 | 6×109 | 1.6×1010 |
洁净区厚度(μm) | None | 20 | 13 | 5 |
Claims (8)
Priority Applications (1)
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CNB2005100564274A CN100437941C (zh) | 2005-03-21 | 2005-03-21 | 一种获得洁净区的硅片快速热处理工艺方法及其产品 |
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CNB2005100564274A CN100437941C (zh) | 2005-03-21 | 2005-03-21 | 一种获得洁净区的硅片快速热处理工艺方法及其产品 |
Publications (2)
Publication Number | Publication Date |
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CN1838388A true CN1838388A (zh) | 2006-09-27 |
CN100437941C CN100437941C (zh) | 2008-11-26 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102168314A (zh) * | 2011-03-23 | 2011-08-31 | 浙江大学 | 直拉硅片的内吸杂工艺 |
CN105470129A (zh) * | 2015-12-01 | 2016-04-06 | 北京七星华创电子股份有限公司 | 一种消除氧热施主对少子扩散长度影响的方法 |
CN105977152A (zh) * | 2016-05-09 | 2016-09-28 | 浙江大学 | 〈311〉直拉硅片的一种热处理方法 |
CN106920746A (zh) * | 2015-12-25 | 2017-07-04 | 有研半导体材料有限公司 | 一种改善硅片表面微缺陷的方法 |
CN106920745A (zh) * | 2015-12-25 | 2017-07-04 | 有研半导体材料有限公司 | 一种消除轻掺退火硅片表面cop的方法 |
CN105543951B (zh) * | 2016-01-21 | 2019-01-01 | 浙江金瑞泓科技股份有限公司 | 一种在高COP硅单晶衬底上制备200mm-300mm低缺陷外延片的方法 |
CN109166799A (zh) * | 2018-09-05 | 2019-01-08 | 德淮半导体有限公司 | 硅片的制备方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6503594B2 (en) * | 1997-02-13 | 2003-01-07 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects and slip |
CN1155064C (zh) * | 1998-09-02 | 2004-06-23 | Memc电子材料有限公司 | 制备理想析氧硅晶片的工艺 |
KR100714528B1 (ko) * | 2000-03-29 | 2007-05-07 | 신에쯔 한도타이 가부시키가이샤 | 어닐웨이퍼의 제조방법 |
-
2005
- 2005-03-21 CN CNB2005100564274A patent/CN100437941C/zh active Active
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102168314A (zh) * | 2011-03-23 | 2011-08-31 | 浙江大学 | 直拉硅片的内吸杂工艺 |
CN102168314B (zh) * | 2011-03-23 | 2012-05-30 | 浙江大学 | 直拉硅片的内吸杂工艺 |
WO2012126334A1 (zh) * | 2011-03-23 | 2012-09-27 | 浙江大学 | 直拉硅片的内吸杂工艺 |
US8466043B2 (en) | 2011-03-23 | 2013-06-18 | Zhejiang University | Process of internal gettering for Czochralski silicon wafer |
CN105470129A (zh) * | 2015-12-01 | 2016-04-06 | 北京七星华创电子股份有限公司 | 一种消除氧热施主对少子扩散长度影响的方法 |
CN105470129B (zh) * | 2015-12-01 | 2018-10-16 | 北京北方华创微电子装备有限公司 | 一种消除氧热施主对少子扩散长度影响的方法 |
CN106920746A (zh) * | 2015-12-25 | 2017-07-04 | 有研半导体材料有限公司 | 一种改善硅片表面微缺陷的方法 |
CN106920745A (zh) * | 2015-12-25 | 2017-07-04 | 有研半导体材料有限公司 | 一种消除轻掺退火硅片表面cop的方法 |
CN105543951B (zh) * | 2016-01-21 | 2019-01-01 | 浙江金瑞泓科技股份有限公司 | 一种在高COP硅单晶衬底上制备200mm-300mm低缺陷外延片的方法 |
CN105977152A (zh) * | 2016-05-09 | 2016-09-28 | 浙江大学 | 〈311〉直拉硅片的一种热处理方法 |
CN105977152B (zh) * | 2016-05-09 | 2019-01-29 | 浙江大学 | 〈311〉直拉硅片的一种热处理方法 |
CN109166799A (zh) * | 2018-09-05 | 2019-01-08 | 德淮半导体有限公司 | 硅片的制备方法 |
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Publication number | Publication date |
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CN100437941C (zh) | 2008-11-26 |
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Address after: 101300 south of Shuanghe Road, Linhe Industrial Development Zone, Changping District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south of Shuanghe Road, Linhe Industrial Development Zone, Changping District, Beijing Patentee before: Youyan semiconductor silicon materials Co.,Ltd. |
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