CN1832220A - 制造薄膜晶体管的方法、薄膜晶体管和显示装置 - Google Patents
制造薄膜晶体管的方法、薄膜晶体管和显示装置 Download PDFInfo
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- CN1832220A CN1832220A CNA2006100567578A CN200610056757A CN1832220A CN 1832220 A CN1832220 A CN 1832220A CN A2006100567578 A CNA2006100567578 A CN A2006100567578A CN 200610056757 A CN200610056757 A CN 200610056757A CN 1832220 A CN1832220 A CN 1832220A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050018164 | 2005-03-04 | ||
KR1020050018164A KR100649189B1 (ko) | 2005-03-04 | 2005-03-04 | 유기 박막 트랜지스터의 제조방법, 이 방법에 의해 제조된유기 박막 트랜지스터 및 이 유기 박막 트랜지스터를 구비한 평판 표시 장치 |
KR10-2005-0018164 | 2005-03-04 | ||
KR1020060012088 | 2006-02-08 | ||
KR1020060012088A KR100749502B1 (ko) | 2006-02-08 | 2006-02-08 | 박막 트랜지스터의 제조방법, 이 방법에 의해 제조된 박막트랜지스터 및 이 박막 트랜지스터를 구비한 표시 장치 |
KR10-2006-0012088 | 2006-02-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1832220A true CN1832220A (zh) | 2006-09-13 |
CN1832220B CN1832220B (zh) | 2010-07-28 |
Family
ID=36994308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100567578A Active CN1832220B (zh) | 2005-03-04 | 2006-03-06 | 制造薄膜晶体管的方法、薄膜晶体管和显示装置 |
Country Status (2)
Country | Link |
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KR (1) | KR100649189B1 (zh) |
CN (1) | CN1832220B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100419514C (zh) * | 2006-10-13 | 2008-09-17 | 友达光电股份有限公司 | 液晶显示器用基板的制作方法 |
US7544528B2 (en) | 2006-07-03 | 2009-06-09 | Au Optronics Corporation | Method for manufacturing substrate of liquid crystal device |
CN101931051A (zh) * | 2009-06-22 | 2010-12-29 | 索尼公司 | 薄膜晶体管和用于制造薄膜晶体管的方法 |
CN103633244A (zh) * | 2012-08-21 | 2014-03-12 | 索尼公司 | 半导体器件及其制造方法以及电子装置 |
CN105047675A (zh) * | 2015-08-06 | 2015-11-11 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板和显示装置 |
CN105047677A (zh) * | 2015-09-09 | 2015-11-11 | 京东方科技集团股份有限公司 | 显示基板及其制作方法和显示装置 |
CN107958956A (zh) * | 2017-09-15 | 2018-04-24 | 友达光电股份有限公司 | 有机薄膜晶体管元件及其制作方法 |
WO2021114327A1 (zh) * | 2019-12-10 | 2021-06-17 | Tcl华星光电技术有限公司 | 阵列基板及显示装置 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100749502B1 (ko) * | 2006-02-08 | 2007-08-14 | 삼성에스디아이 주식회사 | 박막 트랜지스터의 제조방법, 이 방법에 의해 제조된 박막트랜지스터 및 이 박막 트랜지스터를 구비한 표시 장치 |
JP4455517B2 (ja) | 2005-03-04 | 2010-04-21 | 三星モバイルディスプレイ株式會社 | 薄膜トランジスタの製造方法 |
KR100730177B1 (ko) * | 2005-12-07 | 2007-06-19 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이의 제조방법 |
KR101257851B1 (ko) * | 2007-03-13 | 2013-04-24 | 삼성전자주식회사 | 디스플레용 박막 트랜지스터 및 그 제조 방법 |
KR101415560B1 (ko) | 2007-03-30 | 2014-07-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR102601827B1 (ko) * | 2017-12-29 | 2023-11-14 | 엘지디스플레이 주식회사 | 유기발광표시 장치 |
KR102532970B1 (ko) * | 2018-07-31 | 2023-05-16 | 엘지디스플레이 주식회사 | 표시장치 및 그 제조방법 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1243033B1 (en) * | 1999-12-21 | 2019-12-04 | Flexenable Limited | Solution processing |
-
2005
- 2005-03-04 KR KR1020050018164A patent/KR100649189B1/ko active IP Right Grant
-
2006
- 2006-03-06 CN CN2006100567578A patent/CN1832220B/zh active Active
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7544528B2 (en) | 2006-07-03 | 2009-06-09 | Au Optronics Corporation | Method for manufacturing substrate of liquid crystal device |
US7902558B2 (en) | 2006-07-03 | 2011-03-08 | Au Optronics Corporation | Substrate of liquid crystal device and method for manufacturing the same |
CN100419514C (zh) * | 2006-10-13 | 2008-09-17 | 友达光电股份有限公司 | 液晶显示器用基板的制作方法 |
CN101931051A (zh) * | 2009-06-22 | 2010-12-29 | 索尼公司 | 薄膜晶体管和用于制造薄膜晶体管的方法 |
CN101931051B (zh) * | 2009-06-22 | 2013-03-06 | 索尼公司 | 薄膜晶体管和用于制造薄膜晶体管的方法 |
CN103633244A (zh) * | 2012-08-21 | 2014-03-12 | 索尼公司 | 半导体器件及其制造方法以及电子装置 |
CN103633244B (zh) * | 2012-08-21 | 2017-04-12 | 索尼公司 | 半导体器件及其制造方法以及电子装置 |
WO2017020634A1 (en) * | 2015-08-06 | 2017-02-09 | Boe Technology Group Co., Ltd. | Thin-film transistor, array substrate, and display apparatus containing the same, and method for fabricating the same |
CN105047675A (zh) * | 2015-08-06 | 2015-11-11 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板和显示装置 |
CN105047675B (zh) * | 2015-08-06 | 2018-06-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板和显示装置 |
CN105047677A (zh) * | 2015-09-09 | 2015-11-11 | 京东方科技集团股份有限公司 | 显示基板及其制作方法和显示装置 |
WO2017041435A1 (zh) * | 2015-09-09 | 2017-03-16 | 京东方科技集团股份有限公司 | 显示基板及其制作方法和显示装置 |
CN105047677B (zh) * | 2015-09-09 | 2017-12-12 | 京东方科技集团股份有限公司 | 显示基板及其制作方法和显示装置 |
US11018166B2 (en) | 2015-09-09 | 2021-05-25 | Boe Technology Group Co., Ltd. | Display substrate and manufacturing method thereof, display apparatus |
CN107958956A (zh) * | 2017-09-15 | 2018-04-24 | 友达光电股份有限公司 | 有机薄膜晶体管元件及其制作方法 |
TWI628803B (zh) * | 2017-09-15 | 2018-07-01 | 友達光電股份有限公司 | 有機薄膜電晶體元件及其製作方法 |
CN107958956B (zh) * | 2017-09-15 | 2020-10-30 | 友达光电股份有限公司 | 有机薄膜晶体管元件及其制作方法 |
WO2021114327A1 (zh) * | 2019-12-10 | 2021-06-17 | Tcl华星光电技术有限公司 | 阵列基板及显示装置 |
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CN1832220B (zh) | 2010-07-28 |
KR100649189B1 (ko) | 2006-11-24 |
KR20060097144A (ko) | 2006-09-14 |
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