WO2017041435A1 - 显示基板及其制作方法和显示装置 - Google Patents
显示基板及其制作方法和显示装置 Download PDFInfo
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- WO2017041435A1 WO2017041435A1 PCT/CN2016/073837 CN2016073837W WO2017041435A1 WO 2017041435 A1 WO2017041435 A1 WO 2017041435A1 CN 2016073837 W CN2016073837 W CN 2016073837W WO 2017041435 A1 WO2017041435 A1 WO 2017041435A1
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- Prior art keywords
- insulating layer
- layer
- substrate
- forming
- polydimethylsilane
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- 239000000758 substrate Substances 0.000 title claims abstract description 133
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 59
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 26
- 239000011147 inorganic material Substances 0.000 claims abstract description 26
- 239000011368 organic material Substances 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 59
- 229920000555 poly(dimethylsilanediyl) polymer Polymers 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 29
- 239000000377 silicon dioxide Substances 0.000 claims description 28
- 235000012239 silicon dioxide Nutrition 0.000 claims description 28
- 239000011521 glass Substances 0.000 claims description 21
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
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- 238000005530 etching Methods 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 6
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 6
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 238000005286 illumination Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 242
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
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- 239000010408 film Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000013035 low temperature curing Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Definitions
- the present invention relates to the field of display technologies, and in particular, to a display substrate manufacturing method, a display substrate, and a display device.
- the insulating layer between the conductive structures is generally made of only an organic material or only an inorganic material.
- the organic material used is generally a polymer and the dielectric constant of the polymer is relatively low
- the use of the polymer alone as an insulating layer in the thin film transistor makes preparation.
- the threshold voltage of the thin film transistor is relatively high, and the leakage current is large, which affects the electrical performance of the thin film transistor.
- An object of the present invention is to take advantage of both organic materials and inorganic materials as insulating layers.
- the present invention provides a method for fabricating a display substrate, comprising the steps of:
- the thin film transistor includes a gate, a source, a drain and an active layer, a second insulating layer is formed between the gate and the active layer, and a first insulating layer is formed on the substrate, The active layer is formed in the first insulating layer;
- the material of at least one of the substrate, the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer is an organic material, and at least one layer of the material is an inorganic material.
- the step of forming the substrate comprises:
- the first polydimethylsilane layer is peeled off from the base substrate to serve as the substrate.
- the steps of forming the source and the drain include:
- the glass substrate is removed, and a hydrophilic solution containing a conductive material is coated on the substrate to form a source and a drain in the first recess.
- the step of forming the first insulating layer comprises:
- a hydrophilic solution containing a semiconductor material is coated on the first silicon dioxide layer to form the active layer in the via.
- the step of forming the second insulating layer comprises:
- the glass substrate is removed, and a hydrophilic solution containing a conductive material is coated on the second insulating layer to form the gate in the second recess.
- the step of forming the third insulating layer comprises:
- the upper surface of the third insulating layer is subjected to light or oxidation treatment to form a second silicon dioxide layer on the upper surface of the third insulating layer.
- the step of forming the fourth insulating layer comprises:
- the fourth insulating layer is formed on the pixel electrode using at least one of polydimethylsilane, polyimide, polymethyl methacrylate, and polyvinylpyrrolidone.
- the invention also provides a display substrate manufactured according to the above manufacturing method, comprising:
- the thin film transistor comprises a gate, a source, a drain and an active layer
- a first insulating layer disposed on the substrate, the active layer being disposed in the first insulating layer;
- a second insulating layer disposed between the gate and the active layer
- a pixel electrode disposed on the third insulating layer
- the material of at least one of the substrate, the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer comprises an organic material, and at least one layer of the material comprises an inorganic material.
- a first recess corresponding to the pattern of the source and the drain is disposed on a surface of the substrate adjacent to the first insulating layer, and a source and a drain are disposed in the first recess.
- a through hole corresponding to the pattern of the active layer is disposed in the first insulating layer, and the active layer is disposed in the through hole,
- the material of the first insulating layer comprises polydimethylsilane, and a first silicon dioxide layer is formed on an upper surface of the first insulating layer.
- a second recess corresponding to the pattern of the gate is disposed on a surface of the second insulating layer adjacent to the third insulating layer, and the gate is disposed in the second recess.
- the material of the third insulating layer comprises polydimethylsilane, and a second silicon dioxide layer is formed on an upper surface of the third insulating layer.
- the material of the fourth insulating layer comprises at least one of polydimethylsilane, polyimide, polymethyl methacrylate and polyvinylpyrrolidone.
- the present invention also provides a display device comprising the above display substrate.
- the thin film transistor can be provided with both the organic material layer and the organic material layer.
- the advantages have the advantages of including an inorganic material layer, on the one hand, simplifying the manufacturing process, on the other hand, improving the electrical properties of the thin film transistor and the physical properties of the display substrate where the thin film transistor is located. can.
- FIG. 1 is a schematic flow chart showing a method of fabricating a display substrate according to an embodiment of the present invention
- FIG. 2 shows a schematic flow chart of forming a substrate in accordance with one embodiment of the present invention
- FIG. 3 shows a schematic flow diagram of forming a source and a drain in accordance with one embodiment of the present invention
- FIG. 4 shows a schematic flow chart of forming a first insulating layer in accordance with one embodiment of the present invention
- FIG. 5 shows a schematic flow chart of forming a second insulating layer in accordance with one embodiment of the present invention
- FIG. 6 shows a schematic flow chart of forming a third insulating layer in accordance with one embodiment of the present invention
- FIG. 10 and 11 illustrate a specific schematic flow chart for forming a source and a drain according to an embodiment of the present invention
- 16 to 19 illustrate a specific schematic flow chart for forming a second insulating layer according to an embodiment of the present invention
- Figure 22 is a block diagram showing the structure of a display substrate in accordance with one embodiment of the present invention.
- a method for fabricating a display substrate according to an embodiment of the invention includes the steps of:
- the thin film transistor includes a gate electrode 21, a source electrode 22, a drain electrode 23, and an active layer 24.
- a second insulating layer 4 is formed between the gate electrode 21 and the active layer 24, and a first insulating layer is formed on the substrate 1.
- Layer 3, an active layer 24 is formed in the first insulating layer 3;
- the material of at least one of the fourth insulating layers 7 is an organic material, and the material of at least one layer is an inorganic material.
- the thin film transistor By forming an insulating layer in the thin film transistor and a portion of the substrate with an organic material to form an insulating layer in the thin film transistor and another portion in the substrate with an inorganic material, the thin film transistor can be formed to have an insulating layer formed in the thin film transistor with an organic material.
- Advantages of the substrate and the substrate that is, the manufacturing process is simple, the insulating layer can be integrally formed without stacking layer by layer, and the display substrate can be ensured to be soft and bendable), and the insulating layer and the substrate in the thin film transistor are formed by using an inorganic material.
- the advantage ie, the dielectric constant of the insulating layer is high, the leakage current in the thin film transistor can be reduced, and the display substrate can have high toughness and bending resistance).
- the fabrication process of the thin film transistor is simplified, and on the other hand, the electrical performance of the thin film transistor and the physical properties of the display substrate on which the thin film transistor is placed are improved.
- step S1 includes the sub-steps:
- the first polydimethylsilane layer is peeled off from the base substrate 8 to serve as the substrate 1, as shown in FIG.
- the pattern of the recess 11 as the source 22 and the drain 23 can make the shape of the pattern of the source 22 and the drain 23 formed more regular, thereby ensuring good electrical properties of the source 22 and the drain 23.
- the base substrate 8 may be formed of a silicon material, and since the hydroxyl-functionalized first polydimethylsilane layer has a hydroxyl group at the contact surface between the silicon substrate, the first polydimethylsilane layer can It is easy to peel off from the silicon substrate without causing damage to the first polydimethylsilane layer, thereby ensuring that the surface of the formed substrate 1 is flat.
- the step of forming the source 22 and the drain 23 includes sub-steps:
- OTS octadecyltrichlorosilane
- the glass substrate 9 is removed, and a hydrophilic solution containing a conductive material is coated on the substrate 1 to form a source 22 and a drain 23 in the first recess 11, as shown in FIG.
- the surface of the substrate 1 can be brought into contact with octadecyltrichlorosilane 91, and the octadecyltrichlorosilane 91 makes the substrate
- the surface tension (surface energy) of the surface of 1 is lowered, and the first groove 11 is not in contact with octadecyltrichlorosilane 91, and the surface tension of the first polydimethylsilane layer itself is maintained.
- a hydrophilic solution for example, ethanol
- a conductive material for example, a metal or an alloy of aluminum, copper, molybdenum, or the like
- a hydrophilic solution is adsorbed in a recess 11.
- the metal or alloy in the hydrophilic solution remains in the first recess 11 to form the source 22 and the drain 23 .
- the step of forming the first insulating layer 3 includes the sub-steps:
- a hydrophilic solution containing a semiconductor material is coated on the first silicon dioxide layer 31 to form an active layer 24 in the via 32, as shown in FIG.
- the insulating layer in the thin film transistor can have the advantage of an inorganic material, and on the other hand, silicon dioxide The surface tension is low.
- a hydrophilic solution containing a semiconductor material is coated on the first silicon dioxide layer 31, the surface of the first silicon dioxide layer 31 does not adsorb the hydrophilic solution, and the through hole 32 The hydrophilic solution is adsorbed. Further, after the hydrophilic solution is evaporated, the semiconductor material (for example, a metal oxide semiconductor material) in the hydrophilic solution remains in the via hole 32 to form the active layer 24.
- the step of forming the second insulating layer 4 includes the substeps:
- the surface of the glass substrate 9 coated with the octadecyltrichlorosilane 91 is in contact with the surface of the second insulating layer 4 on which the second groove 41 is formed, as shown in FIG. 18;
- the surface of the second insulating layer 4 can be brought into contact with octadecyltrichlorosilane 91, octadecyl group
- the trichlorosilane 91 lowers the surface tension (surface energy) of the surface of the second insulating layer 4, while the second groove 41 does not come into contact with the octadecyltrichlorosilane 91, and still maintains the third polydimethyl group.
- the silane layer itself has a higher surface tension.
- a hydrophilic solution for example, ethanol
- a conductive material for example, a metal or an alloy of aluminum, copper, molybdenum, or the like
- the surface of the second insulating layer 4 does not adsorb hydrophilicity.
- the solution while the second groove 41 adsorbs the hydrophilic solution, further, after the hydrophilic solution is evaporated, the metal or alloy in the hydrophilic solution remains in the second groove 41 to form the gate 21 .
- the source, the drain, the active layer and the gate By forming the source, the drain, the active layer and the gate in the above manner, the combination of the source, the drain, the active layer and the gate and the layer where the gate is respectively located can be more stable and compact, which is more advantageous for ensuring the realization of the thin film transistor. Good electrical function.
- the gate electrode 21 By forming the gate electrode 21 in the manner of the present embodiment, the gate electrode 21 can be formed inside the second insulating layer 4, so that the structure of the thin film transistor can be ensured.
- step S3 includes the sub-steps:
- the upper surface of the third insulating layer 5 is irradiated or oxidized to form a second silicon dioxide layer 51 on the upper surface of the third insulating layer, as shown in FIG.
- the silicon dioxide is an inorganic material
- forming the second silicon oxide layer 51 on the upper surface of the third insulating layer 5 can make the insulating layer in the thin film transistor have the advantage of an inorganic material.
- the fourth polydimethylsilane layer contains silicon element, and a silicon dioxide layer can be formed on the surface of the fourth polydimethylsilane layer directly by light irradiation or oxidation, and the formed silicon dioxide layer and the fourth poly 2 are formed.
- the methyl silane layer maintains a unitary structure such that the layers are more closely packed.
- step S5 comprises the substeps:
- a fourth insulating layer 7 is formed on the pixel electrode 6 using at least one of polydimethylsilane, polyimide, polymethyl methacrylate, and polyvinylpyrrolidone.
- each layer in the thin film transistor can have an organic material layer (substrate 1 and first insulating layer 3), an inorganic material layer (first silicon oxide layer 31), and organic The spacing distribution of the material layers (the second insulating layer 4 and the third insulating layer 5), the inorganic material layer (the second silicon dioxide layer 51), and the organic material layer (the fourth insulating layer 7), so that the thin film transistor has both organic and organic Advantages of the material layer and advantages including the inorganic material layer.
- the formation process employed in the above process may include, for example, a deposition process such as deposition, sputtering, and the like, and a patterning process such as etching.
- the illumination operation involved in the above process can be irradiated by ultraviolet light, and the oxidation operation involved can be oxidized by ozone.
- the above process of forming the substrate 1 or the insulating layer by the polydimethylsilane layer further includes subjecting the polydimethylsilane layer to low-temperature curing molding (for example, curing at 60 ° C for 4 hours).
- a bottom gate type thin film transistor can be formed according to the above process as needed.
- the present invention further provides a display substrate manufactured according to the above manufacturing method, comprising:
- the thin film transistor includes a gate 21, a source 22, a drain 23, and an active layer 24;
- a first insulating layer 3 disposed on the substrate 1 and an active layer 24 disposed in the first insulating layer 3;
- a second insulating layer 4 disposed between the gate electrode 21 and the active layer 24;
- a pixel electrode 6 disposed on the third insulating layer 5;
- the material of at least one of the substrate 1, the first insulating layer 3, the second insulating layer 4, the third insulating layer 5, and the fourth insulating layer 7 includes an organic material, and at least one layer of the material includes an inorganic material.
- a source 22 is provided on a surface of the substrate 1 adjacent to the first insulating layer 3
- a first recess 11 corresponding to the pattern of the drain 23 is provided with a source pole 22 and a drain 23 in the first recess 11.
- a through hole 32 corresponding to the pattern of the active layer 24 is disposed in the first insulating layer 3, and an active layer 24 is disposed in the through hole 32,
- the material of the first insulating layer 3 includes polydimethylsilane, and the first silicon dioxide layer 31 is formed on the upper surface of the first insulating layer 3.
- a second groove 41 corresponding to the pattern of the gate electrode 21 is disposed on a surface of the second insulating layer 4 adjacent to the third insulating layer 5, and a gate electrode 21 is disposed in the second groove 41.
- the material of the third insulating layer 5 includes polydimethylsilane, and the second silicon oxide layer 51 is formed on the upper surface of the third insulating layer 5.
- the material of the fourth insulating layer 7 includes at least one of polydimethylsilane, polyimide, polymethyl methacrylate, and polyvinylpyrrolidone.
- the present invention also provides a display device comprising the above display substrate.
- the display device in this embodiment may be any product or component having a display function, such as an electronic paper, a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, and a navigator.
- a display function such as an electronic paper, a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, and a navigator.
- the technical solution of the present invention is described in detail above with reference to the accompanying drawings.
- the insulating layer in the thin film transistor is only made of an organic material in the prior art, the electrical performance of the thin film transistor is lowered, and only the insulating material is used to fabricate the insulating film in the thin film transistor.
- the layer may increase the complexity of the fabrication process of the thin film transistor.
- the present invention can form an insulating layer in the thin film transistor and another portion in the substrate by using an inorganic material to form an insulating layer and a portion of the substrate in the thin film transistor.
- the thin film transistor has the advantages of including an organic material layer and an inorganic material layer. On one hand, the fabrication process is simplified, and on the other hand, the electrical performance of the thin film transistor and the physical properties of the display substrate on which the thin film transistor is placed are improved.
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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Abstract
Description
Claims (14)
- 一种显示基板制作方法,其特征在于,包括步骤:形成基底;在所述基底上形成薄膜晶体管,其中,所述薄膜晶体管包括栅极、源极、漏极和有源层,在所述栅极和有源层之间形成有第二绝缘层,在所述基底上形成有第一绝缘层,所述有源层形成在第一绝缘层中;在所述薄膜晶体管之上形成第三绝缘层;在所述第三绝缘层之上形成像素电极;在所述像素电极之上形成第四绝缘层,其中,所述基底、第一绝缘层、第二绝缘层、第三绝缘层和第四绝缘层中的至少一层的材料为有机材料,至少一层的材料为无机材料。
- 根据权利要求1所述的制作方法,其特征在于,形成基底的步骤包括:在衬底基板上形成与源极和漏极的图形对应的第一凸起;在所述衬底基板上形成羟基功能化的第一聚二甲基硅烷层,以在所述第一聚二甲基硅烷层的靠近衬底基板的面上与所述第一凸起对应的位置处形成与源极和漏极的图形对应的第一凹槽;将所述第一聚二甲基硅烷层从所述衬底基板上剥离,以作为所述基底。
- 根据权利要求2所述的制作方法,其特征在于,形成源极和漏极的步骤包括:在玻璃基板上涂覆十八烷基三氯硅烷;将所述玻璃基板的涂覆有十八烷基三氯硅烷的面与所述基底的形成有第一凹槽的面相接触;移除所述玻璃基板,在所述基底上涂覆包含导电材料的亲水性溶液,以在所述第一凹槽中形成源极和漏极。
- 根据权利要求1所述的制作方法,其特征在于,形成第一绝缘层的步骤包括:在所述基底上形成第二聚二甲基硅烷层,以作为所述第一绝缘层;对所述第一绝缘层的上表面进行光照或氧化处理,以在所述第一绝缘层的上表面形成第一二氧化硅层;对所述第一二氧化硅层和所述第一绝缘层进行蚀刻,以形成与所述有源层的图形对应的通孔;在所述第一二氧化硅层上涂覆包含半导体材料的亲水性溶液,以在所述通孔中形成所述有源层。
- 根据权利要求1所述的制作方法,其特征在于,形成第二绝缘层的步骤包括:在所述第一绝缘层上形成第三聚二甲基硅烷层,以作为所述第二绝缘层;对所述第二绝缘层进行蚀刻,以形成与所述栅极的图形对应的第二凹槽;在玻璃基板上涂覆十八烷基三氯硅烷;将所述玻璃基板的涂覆有十八烷基三氯硅烷的面与所述第二绝缘层的形成有第二凹槽的面相接触;移除所述玻璃基板,在所述第二绝缘层上涂覆包含导电材料的亲水性溶液,以在所述第二凹槽中形成所述栅极。
- 根据权利要求1所述的制作方法,其特征在于,形成第三绝缘层的步骤包括:在所述第二绝缘层上形成第四聚二甲基硅烷层,以作为所述第三绝缘层;对所述第三绝缘层的上表面进行光照或氧化处理,以在所述第三绝缘层的上表面形成第二二氧化硅层。
- 根据权利要求1至6中任一项所述的制作方法,其特征在于,形成第四绝缘层的步骤包括:采用聚二甲基硅烷、聚酰亚胺、聚甲基丙烯酸甲酯和聚乙烯吡咯烷酮中的至少一种材料在所述像素电极上形成所述第四绝缘层。
- 一种根据权利要求1至7中任一项所述制作方法制作的显示基板,其特征在于,包括:基底;薄膜晶体管,其设置在所述基底之上,其中,所述薄膜晶体管包括栅极、源极、漏极和有源层;第一绝缘层,其设置在所述基底上,所述有源层设置在所述第一绝缘层中;第二绝缘层,其设置在所述栅极和有源层之间;第三绝缘层,其设置在所述薄膜晶体管之上;像素电极,其设置在所述第三绝缘层之上;第四绝缘层,其设置在所述像素电极之上,其中,所述基底、第一绝缘层、第二绝缘层、第三绝缘层和第四绝缘层中的至少一层的材料包括有机材料,至少一层的材料包括无机材料。
- 根据权利要求8所述的显示基板,其特征在于,在所述基底的靠近第一绝缘层的面上设置有与源极和漏极的图形对应的第一凹槽,在所述第一凹槽中设置有源极和漏极。
- 根据权利要求8所述的显示基板,其特征在于,在所述第一绝缘层中设置有与所述有源层的图形对应的通孔,在所述通孔中设置有所述有源层,其中,所述第一绝缘层的材料包括聚二甲基硅烷,在所述第一绝缘层的上表面形成有第一二氧化硅层。
- 根据权利要求8所述的显示基板,其特征在于,在所述第二绝缘层的靠近第三绝缘层的面上设置有与所述栅极的图形对应的第二凹槽,在所述第二凹槽中设置有所述栅极。
- 根据权利要求8所述的显示基板,其特征在于,所述第三绝缘层的材料包括聚二甲基硅烷,在所述第三绝缘层的上表面形成有第二二氧化硅层。
- 根据权利要求8至12中任一项所述的显示基板,其特征在于,所述第四绝缘层的材料包括聚二甲基硅烷、聚酰亚胺、聚甲基丙烯酸甲酯和聚乙烯吡咯烷酮中的至少一种。
- 一种显示装置,其特征在于,包括权利要求8至13中任一项所述的显示基板。
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