A kind of serigraphy method for making of through printing forme
Technical field
The present invention relates to a kind of method for making of through printing forme, particularly a kind of serigraphy method for making of through printing forme.
Background technology
The method that tradition forms plasma display screen barrier is to utilize silk screen print method and sand-blast, no matter which kind of method is when forming the barrier material layer, can form the barrier material layer with silk screen print method, yet in traditional through printing forme printing barrier, because silk screen is thinner, generally have only tens microns, and the dry-film resist of through printing forme is also thinner, has only several microns.Slurry when therefore printing in the graph area is less-and the blanking amount is fewer, causes print pass to increase, and is time-consuming, causes the huge waste of manpower and materials.
Form in the print process of plasma panel electrode in tradition, usually because the dry-film resist of through printing forme figure is thinner, the silk thread of silk screen can stay impression on glued membrane, and the uneven phenomenon of electrode edge when causing printing.
Summary of the invention
The objective of the invention is to overcome the shortcoming of above-mentioned prior art, a kind of method for making that can make the minimizing of barrier print pass, the neat serigraphy of electrode edge printing use through printing forme is provided.
For achieving the above object, the technical solution used in the present invention is: at first, on silk screen, apply the photosensitive layer of one deck desired thickness with coating process, and dry down at 30-60 ℃; Then, at silk screen positive coating second layer photoresists and dry under 30-60 ℃, last, form required through printing forme by photoetching process.
Another characteristics of the present invention are: silk screen back side coating second layer photoresists and 30-60 ℃ of drying; The thickness of second layer photoresists is the 3-30 micron.
Because the present invention applies photoresists and forms required through printing forme by photoetching process on silk screen, make that print pass reduces, and has reduced production cost when the printing slurry, pattern edge is also neat than before when printing in addition, has improved printing quality.
Description of drawings
Fig. 1 is the silk screen schematic cross-section;
Fig. 2 is a through printing forme sectional view of the present invention;
Fig. 3 is the sectional view of another structure of through printing forme of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
Referring to Fig. 1,2,3, through printing forme manufacturing process of the present invention is as follows: the photosensitive layer 2 that at first applies one deck desired thickness on silk screen 3 with coating process, dry under 30-60 ℃, be the second layer photoresists 1 of 3-30 micron in the positive applied thickness of silk screen then, 30-60 ℃ is dry down, the present invention can be 3-30 micron second layer photoresists 1` in silk screen back side applied thickness also, 30-60 ℃ of drying.If photoresists thickness does not reach requirement, then can continue coating and dry, reach required thickness until photosensitive layer, form required figure with photoetching process at last.