CN1768401A - Fept magnetic thin film having perpendicular magnetic anisotropy and method for preparation thereof - Google Patents
Fept magnetic thin film having perpendicular magnetic anisotropy and method for preparation thereof Download PDFInfo
- Publication number
- CN1768401A CN1768401A CN 200480008379 CN200480008379A CN1768401A CN 1768401 A CN1768401 A CN 1768401A CN 200480008379 CN200480008379 CN 200480008379 CN 200480008379 A CN200480008379 A CN 200480008379A CN 1768401 A CN1768401 A CN 1768401A
- Authority
- CN
- China
- Prior art keywords
- fept
- film
- thin film
- magnetic thin
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
A FePt magnetic thin film, characterized in that it has an atomic composition represented by the following formula: FexPt100-x wherein 19 < x < 52; and a method for preparing the FePt magnetic thin film. The FePt magnetic thin film is novel, can be formed at a lowered temperature, and further, has perpendicular magnetic anisotropy.
Description
Technical field
The application's invention is about having the FePt magnetic thin film and the manufacture method thereof of perpendicular magnetic anisotropic.
Background technology
In recent years along with the development of advanced information society, the super-high density magnetic storage medium of bulk information can be handled, be stored to urgent expectation exploitation.As the necessary characteristic of magnetic storage medium, can enumerate magnetic isolated particulate structure, this particulate and can resist that heat upsets, orientation etc. in one direction.Especially, in order to realize the densification of magnetic storage medium, be necessary to reduce the atomic size of ferromagnetism.But if the atomic size of ferromagnetism is reduced, then heat upsets the critical particle diameter that occupies ascendancy owing to exist at ambient temperature, the instability so magnetic storage becomes.From this viewpoint, has huge single shaft crystallization magnetic anisotropy (the L10 structure FePt structure FePt ordered alloy of Ku=7.0 * 107erg/cc), though the ultra micro small-particle that is nano-scale also can be kept ferromagnetism, therefore be subjected to numerous gazing at material as follow-on super-high density magnetic storage medium.
The FePt ordered alloy is compared with its high uniaxial magnetic anisotropy, also has the purposes as magnetite.FePt compares with the rare earth element magnet of Nd or Sm class etc., and is all very outstanding aspect corrosion resistance and oxidative resistance.For rare earth element magnet, add element in order to improve its corrosion resistance or oxidative resistance, and cause the magnetic deterioration by this interpolation element.And owing to there is no need to add element among the FePt, the magnetic of FePt self is reflected in the magnetite characteristic, so highly beneficial.If realize so outstanding corrosion proof film magnetite, then can expect to be applied to microminiature electromagnetic component, micro-machine apply the medical therapy in magnetic field with parts such as microminiature magnetite, dental accessory, neuralwards or in body the medicine of the micro-medicine of importing send in the pump that system uses etc.
But the L10 structure is stable on the thermodynamics at room temperature, and the FePt film of making by sputter since in its manufacture process the order-disorder transient point through existing in the high temperature, so can not metamorphosis be ordered structure (ordering).Therefore, in order to obtain the L10 ordered structure, need on warmed-up substrate, carry out film forming or the disordered alloy film after the film forming heat-treated etc. surpassing 500 ℃ high-temperature process usually.But, the present material that is using in the hard disk unit, it does not have tolerance to high temperature so, and high-temperature process is regarded as from the viewpoint of practicality and is very big obstruction.
In recent years, reported much in order to reduce the synthetic method of this treatment temperature, but these low temperature synthetic methods, produced because the interpolation of element causes that magnetic reduces, the problem such as complicated of crystalline orientation control, processing.In addition, the majority of these synthetic methods mainly is with stoichiometric composition Fe
50Pt
50Perhaps the Fe-rich composition carries out.(non-patent literature 1)
In addition, recently successfully low temperature has synthesized the FePt film (non-patent literature 2) with L10 structure by spatter film forming on 300 ℃ the substrate being heated to for high bridge etc., but by research thereafter, finding that this low temperature is synthetic has the thickness dependence, then is not difficult to carry out ordering as thickness more than 100nm.
Non-patent literature 1:M.Watanabe, M.Homma and T.Masumoto, Trans.J.Magn.Magn.Mater.177,1231 (1998)
Non-patent literature 2:Y.K.Takahashi, M.Ohnuma, and K.Hono, Jpn.J.Appl.Phys.40, L367 (2001)
Patent documentation 1: the spy opens the 2003-99920 communique
Summary of the invention
Therefore, the present application to be to eliminate the problem of above-mentioned past technology, be provided at low temperature down can film forming and new FePt magnetic thin film and manufacture method thereof with perpendicular magnetic anisotropic be problem.
The present application, as the method that solves above-mentioned problem, the first, a kind of FePt magnetic thin film is provided, it is characterized in that atom is formed to represent with following formula:
Fe
xPt
100-x (19＜x＜52)。
In addition, the present application, the second, a kind of FePt magnetic thin film is provided, it is characterized in that having the L10 structure with the thickness of not enough 100nm.
The 3rd, a kind of FePt magnetic thin film is provided, it is characterized in that, be film forming on monocrystal substrate or its surperficial oxide-base bottom; The 4th, a kind of FePt magnetic thin film is provided, it is characterized in that, be across the film forming by the thin layer that constitutes more than a kind or 2 kinds in transition metal and the noble metal as basalis; The 5th, a kind of FePt magnetic thin film is provided, wherein, thin layer is individual layer or multilayer; The 6th, a kind of FePt magnetic thin film is provided, wherein, thin layer is by being constituted by the layer that constitutes more than a kind or 2 kinds among Fe, Ag, Ni, Co and the Cr with by the layer that constitutes more than a kind or 2 kinds among Au, Pt and the Cu.
Then, the present application, the 7th, a kind of manufacture method of FePt magnetic thin film is provided, it is characterized in that, at monocrystal substrate, be provided with the substrate of oxide-base bottom or be provided with on the substrate as basalis by the thin layer that constitutes more than a kind or 2 kinds in transition metal and the noble metal, in the scope of 240 ℃～500 ℃ of temperature, carry out spatter film forming; The 8th, a kind of manufacture method of FePt magnetic thin film is provided, wherein, carry out spatter film forming below 300 ℃ in temperature.
Aforesaid the application's invention, the brand-new opinion that is based on result's acquisition of being inquired into by the inventor is finished.That is, when utilizing sputtering method to make the FePt film, by with composition from Fe
50Pt
50(at.%) stoichiometric composition is displaced to the Pt-rich side, can synthesize at face vertical direction orientation and the big FePt ordered alloy film of crystallization magnetic anisotropy by low temperature.
Promptly, in the present application, be conceived to the composition dependence of the ordering of FePt in the low temperature, utilize the FePt film of the composition range that sputtering method can the wide scope of film forming under the substrate temperature of practicality, even if can film forming there be the dependent FePt that also has the L10 structure smaller or equal to the ultrathin membrane of 10nm of film of FePt film.Further, by making and the substrate epitaxial growth, successfully formulated the L10 structure FePt film that has uniaxial magnetic anisotropy in the face vertical direction.Compare with the low-temperature preparation method in past, have very big difference, promptly the short-cut method that changes by the composition that only makes the FePt phase just can be made the L10 structure FePt ordered alloy film that is oriented control at low temperature.In addition, realized very large crystal magnetic anisotropy by this easy method.
Description of drawings
Fig. 1 is the figure of X-ray diffraction pattern of the FePt film of expression execution mode 1.
Fig. 2 is the figure of the magnetization curve in the expression execution mode 2.
Fig. 3 is the figure of the composition dependency degree of a axle of the FePt film of expression in the execution mode 3 and axial interval of c, c/a (axial ratio), degree of order S and crystallization magnetic anisotropy constant Ku.
Fig. 4 is Fe in the expression execution mode 4
38Pt
62The figure of the X-ray diffraction pattern of film.
Fig. 5 is the figure of the magnetization curve of FePt film in the expression execution mode 5.
Fig. 6 is Fe in the expression execution mode 6
38Pt
62The figure of the X-ray diffraction pattern of film.
Fig. 7 is Fe in the expression execution mode 7
38Pt
62The figure of the magnetization curve of film.
Fig. 8 is Fe in the expression execution mode 8
38Pt
62The figure of the X-ray diffraction pattern of film.
Fig. 9 is the figure of X-ray diffraction pattern in the expression execution mode 9.
Figure 10 is the figure of magnetization curve in the expression execution mode 9.
Figure 11 is the Ku of expression in the execution mode 10 and the figure of the relation of lattice misfit.
Figure 12 is the magnetized temperature dependent figure in the expression execution mode 11.
Figure 13 is the figure of the relation of Fe concentration and Curie temperature Tc in the expression execution mode 11.
Embodiment
The present application is the invention with above-mentioned feature, regards to down to execute mode in fact and describe.
At first, the FePt magnetic thin film in the present application, needs show the composition range of high uniaxial magnetic anisotropy.Therefore, be necessary the alloying component (atomic ratio) of FePt phase is Fe
xPt
100-xAnd 19＜x＜52.
In addition, consider the commercial Application to Subminiature electronic parts etc., preferred thickness is thin as far as possible.According to the application's invention, different with the method in past, do not need the thickness of 100nm, can in the scope from 2nm to 100nm, come the film of film forming L10 structure.
In order to pay magnetic anisotropy, be necessary the crystallization control direction, but this easily becomes possibility by selecting monocrystal substrate to the FePt of film forming on substrate film.In order to make easily axle orientation vertically of magnetization, can enumerate NaCl (001), GaAs (001) etc. except MgO (001) as preferred monocrystal substrate.In addition, during various materials such as glass substrate beyond using monocrystalline, by set the basalis of oxides such as MgO or ZnO on the surface of these substrates, orientation control becomes easy.
In the application's invention, when the FePt forming thin film, the basalis of selecting substrate and the oxide that sets in its surface and other materials to constitute is very important.
About for the substrate of the FePt phase that can obtain ordered phase and the selection of basalis, also considered the viewpoint of the promotion of the orientation control of FePt phase and ordering.In the application's invention, from this viewpoint, also consider on substrate (preferred monocrystal substrate or have the substrate of oxide-base bottom), to come film forming FePt thin magnetic layer across the thin layer that constitutes more than a kind or 2 kinds by in transition metal and the noble metal as basalis.
The thin layer of this moment can be individual layer or multilayer, but considers that as preferred mode thin layer is made of layer (this layer can be called as inculating crystal layer) that constitutes more than a kind or 2 kinds among Fe, Ag, Ni, Co and the Cr and the layer (can be called as resilient coating) that constitutes more than a kind or 2 kinds among Au, Pt and the Cu.Preferably about inculating crystal layer, its thickness is 0.2～2nm, and about resilient coating, its thickness is 5～50nm.
About the basalis of these transition metal and noble metal,,, can obtain higher order and bigger perpendicular magnetic anisotropic in rich Pt lateral element zone by selecting and the bigger basalis of FePt layer crystal lattice mispairing.In addition, can carry out anisotropic control by the basalis of selecting.
Certainly, be not necessarily to need basalis as above to set.Come set component and membrance casting condition by viewpoint, can carry out the orientation control of FePt film from the ordering of FePt phase.For example, shown in the execution mode, even if without inculating crystal layer and these basalises of resilient coating, the FePt layer on MgO (001) monocrystal substrate is oriented control, carry out ordering in rich Fe lateral element zone in 240～500 ℃ temperature range as described later.For the orientation control of this moment, consider for example preferably to make Ar (argon) air pressure carry out spatter film forming in the scope of 3mTorr～40mTorr.
The FePt magnetic thin film of the present application and is compared in the past, makes by sputtering method under lower temperature, but when the FePt film forming, in order to realize ordered phase and big uniaxial magnetic anisotropy, needs substrate temperature to a certain degree.On the other hand, from the viewpoint of practicality, needing treatment temperature is low temperature.Need be that 240～500 ℃ scope is carried out film forming at substrate temperature for this reason, but can smaller or equal to 300 ℃ of following low temperature synthetic be the maximum feature of the present application.
In addition, when being applied in the storage medium, need the highfield to the material with high coercive force for write (the magnetized counter-rotating) of information.Therefore, advise hot auxiliary type magnetic storage mode.By utilizing laser etc. that storage medium is carried out localized heating, the temperature of magnetic is risen near the Curie temperature, part is eliminated magnetization (information).At this moment, by applying magnetic field from the outside, can after the cooling its magnetic field towards on magnetize.When considering the trend of this information storage means, the control Curie temperature is very important when the magnetic storage that is applied to hot supplementary mode etc.Therefore, the feature of the FePt film of the present application has just obtained utilization.That is, in rich Pt lateral element zone, can the synthetic FePt ordered alloy film of low temperature with Curie temperature Tc lower than big capability value.In addition, by adjusting composition, can at random control Tc.
Therefore, point out execution mode below, describe in further detail.Certainly, the present invention is not subjected to the qualification of following execution mode.
[execution mode]
＜execution mode 1 〉
Utilize and arrive vacuum degree 1 * 10
-9The corresponding magnetic control sputtering device of UHV that Torr is following, with Ar air pressure 1mTorr at room temperature the Fe inculating crystal layer, the Pt resilient coating of 40nm of film forming 1nm, the thickness with 18nm carries out spatter film forming under the condition of 300 ℃ of substrate temperatures, Ar air pressure 5mTorr thereafter on MgO (001) monocrystal substrate.Fig. 1 is the figure of the X-ray diffraction pattern of the FePt film that obtains of expression.Fe
XPt
100-XBe X=68 (a) mutually, 62 (b), 52 (c), 45 (d), 38 (e), 34 (f), 30 (g), the composition of 19 (h).From only observing the diffraction peak of (00n), as can be known on MgO (001) substrate the FePt layer have MgO (001) //position relation of FePt (001) and growing up.Observation can observe the fundamental reflection line (002) of FePt phase and Pt (002) and (004) diffraction peak of (004) diffraction peak and resilient coating in the FePt of all compositions film.Can confirm in the FePt film of x＜45, can observe superlattice reflection line (001) and (003) diffraction peak of FePt, can obtain the FePt ordered alloy of L10 structure.The integrated intensity of superlattice reflection line becomes maximum in the FePt film of x=38 as can be known, and ordering is carried out the most well.The Fe of stoichiometric composition as can be known
50Pt
50Do not observe the superlattice reflection line in the film, 300 ℃ substrate temperature is lower temperature for carrying out ordering in the FePt of stoichiometric composition film.But move to the Pt-rich lateral deviation by composition as can be known, can carry out ordering, even if also can obtain the L10 ordered structure at 300 ℃ substrate temperature with the FePt film.Can be clear and definite, carry out the ordering of FePt at low temperatures at the composition range of 19＜x＜52.
＜execution mode 2 〉
Identical with execution mode 1, the Fe inculating crystal layer of film forming 1nm, the Pt resilient coating of 40nm under room temperature on MgO (001) monocrystal substrate carry out film forming FePt layer at 300 ℃ of thickness with 18nm of substrate temperature thereafter.Fig. 2 be measure on direction and the face vertical direction in the face of expression sample the figure of magnetization curve.Fe
XPt
100-XBe X=52 (a) mutually, 45 (b), 38 (c), 34 (d), 30 (e), the composition of 19 (f).As can be known, direction is the easy axle of magnetization in the face of the FePt film of x=52, but along with x is reduced, the easily axial face vertical direction of magnetization changes.From the crystallization magnetic anisotropy constant Ku that the magnetization curve institute area surrounded by direction and face vertical direction in the face of the FePt film of x=38 calculates, be 1.8 * 107erg/cc, be very large value.Can be clear and definite, the composition range in 19＜x＜52 can synthesize the FePt film that has uniaxial magnetic anisotropy on the face vertical direction.
＜execution mode 3 〉
Fig. 3 shows, with execution mode 1 coexist mutually on MgO (001) monocrystal substrate at room temperature the Fe inculating crystal layer of film forming 1nm, the Pt resilient coating of 40nm, thereafter under 300 ℃ of conditions of substrate temperature with the Fe of the thickness film forming of 18nm
xPt
100-xAxial ratio c/a, the degree of order S of axial interval of a axle of phase and c, this c axle and a axle and the composition dependence of crystallization magnetic anisotropy constant Ku.By making x be increased to 38, reduce the face interval of c face monotonously, in the scope of 38≤x≤68, keep certain value thereafter.On the other hand, the face of a face is got certain value in the scope of 38≤x at interval, reduces in x 〉=38.Can estimate the crooked degree of crystal lattice from c/a.The value of c/a shows minimum value 0.955 at x=38, and this moment, S, Ku were maximum as can be known.
＜execution mode 4 〉
Identical with execution mode 1 shown in Fig. 4, the Fe inculating crystal layer of film forming 1nm, the multiple metal of 40nm, the resilient coating of alloy under room temperature on MgO (001) monocrystal substrate are thereafter at 300 ℃ of Fe with the thickness film forming of 18nm of substrate temperature
3aPt
62The X-ray diffraction pattern of film.Resilient coating has been selected Au, AuPt and Pt.Even if use arbitrary resilient coating as can be known, can both observe superlattice reflection line (001) and (003) diffraction peak of can't see from the FePt phase of the diffracted ray of another side legibly.Thus, can be clear and definite, by the lattice misfit little resilient coating of selection with FePt, can the synthetic FePt ordered alloy film of low temperature with L10 structure.
＜execution mode 5 〉
Identical with execution mode 1 shown in Fig. 5, the Fe inculating crystal layer of film forming 1nm, the resilient coating of 40nm under room temperature on MgO (001) monocrystal substrate are thereafter at 300 ℃ of magnetization curves that carry out film forming FePt film with the thickness of 18nm of substrate temperature.Resilient coating has been selected Au, AuPt and Pt.Fe
xPt
100-xComposition be x=38 or 52.Using under the situation of arbitrary resilient coating Fe as can be known
38Pt
62The magnetization of film axle easily is the face vertical direction, from the crystallization magnetic anisotropy constant that magnetization curve calculates, is to compare Fe
52Pt
48Big value.In addition, when selecting with the lattice misfit of FePt than the also big Au of Pt as can be known,, when using the resilient coating of Pt, has bigger crystallization magnetic anisotropy by crooked influence from basalis as resilient coating.Hence one can see that, can control anisotropy by the selection of resilient coating.
＜execution mode 6 〉
Identical with execution mode 1 shown in Fig. 6, the Fe inculating crystal layer of film forming 1nm, the Pt resilient coating of 40nm make Thickness Variation and the Fe of film forming for 300 ℃ at substrate temperature thereafter under room temperature on MgO (001) monocrystal substrate
38Pt
62The X-ray diffraction pattern of film.The thickness t of FePt layer changes from 9nm to 54nm.Can both observe superlattice reflection line (001) and (003) diffraction peak of FePt phase at arbitrary thickness, so can access FePt ordered alloy film with L10 structure.Make by increase to result from the peak strength of L10 ordered structure and increase, can think to access the higher FePt film of the degree of order by thickness.
＜execution mode 7 〉
Identical with execution mode 1 shown in Fig. 7, the Fe inculating crystal layer of film forming 1nm, the Pt resilient coating of 40nm make Thickness Variation and the Fe of film forming for 300 ℃ at substrate temperature thereafter under room temperature on MgO (001) monocrystal substrate
38Pt
62The magnetization curve of film.The thickness t of FePt layer changes from 9nm to 54nm.Can both confirm to magnetize easy axle for the face vertical direction at the thickness of arbitrary FePt layer, have uniaxial magnetic anisotropy.In addition, from the magnetic saturation variation of difficult direction of principal axis (be direction in the face this moment), can think that the crystallization magnetic anisotropy increases by the increase of thickness.
＜execution mode 8 〉
Identical with execution mode 1 shown in Fig. 8, the Fe inculating crystal layer of film forming 1nm, the Au resilient coating of 40nm under room temperature on MgO (001) monocrystal substrate are thereafter at the Fe of 300 ℃ of the substrate temperatures film forming with the thickness of 18nm
38Pt
62The X-ray diffraction pattern of film.Can be from the Fe of 240 ℃ of substrate temperatures
38Pt
62The X-ray diffraction pattern of film, superlattice reflection line (001) and (003) diffraction peak of observation FePt phase.Thus, can be clear and definite, the substrate temperature when film forming is to carry out ordering under the condition more than 240 ℃.
＜execution mode 9 〉
To MgO (001) monocrystal substrate, under condition, utilize the corresponding magnetic control sputtering device of UHV, directly with the thickness film forming FePt film of 18nm with 300 ℃ of Ar air pressure 5mTorr, temperature.
Fig. 9 is the figure of the X-ray diffraction pattern of this film of expression.At Fe
XPt
100-XIn, the film of expression x=52 (stoichiometric composition), x=38 (nonstoichiometric composition).
From result, only can observe the diffraction peak of (00n), as can be known sample film (001) orientation by the FePt film of film forming on MgO (001) substrate.Near stoichiometric composition Fe
52Pt
48In the film, can't observe clear FePt (001) and (003) superlattice reflection line, not carry out ordering.But, can confirm Fe at the composition range of rich Pt side
38Pt
62In the film, can observe clear and definite superlattice reflection line, can confirm that the L10 ordered structure is formed.
To be the expression solid line be the magnetization curve measured, the dotted line figure for the result that measures on the direction in the expression face face to Figure 10 on the face vertical direction in addition.At Fe
52Pt
48Film, not to the perpendicular magnetic anisotropic of face vertical direction, but at the Fe of the composition of rich Pt side
38Pt
62Film has the bigger perpendicular magnetic anisotropic of Ku=2.7 * 107erg/cc.
For example from above result, even if do not use inculating crystal layer and resilient coating as can be known, by on MgO (001) monocrystal substrate, carrying out the orientation control of FePt layer, at Fe
xPt
100-xOrdering is carried out in the rich Pt lateral element zone of (in at.%) 19＜x＜52 in 240～500 ℃ temperature range.In addition, confirm that also the Ar air pressure of preferred film forming is from 3mTorr to 40mTorr in order to be orientated control this moment.
＜execution mode 10 〉
Identical with execution mode 1, make FePt film with various basalises.For these films, inquire into the influence of lattice misfit.Figure 11 is its result's of expression figure, as can be known at the Fe of the composition range of rich Pt side
38Pt
62Film by utilizing the big basalis in lattice misfit, obtains bigger uniaxial magnetic anisotropy energy; On the other hand, near the Fe stoichiometric composition
52Pt
48In the film, exist for optimum and lattice misfit basalis that obtains perpendicular magnetic anisotropic.
＜execution mode 11 〉
To MgO (001) monocrystal substrate, under condition, utilize the UHV-magnetic control sputtering device, film forming Fe inculating crystal layer (1nm), Pt resilient coating (40nm) and FePt film (18nm) with 300 ℃ of Ar air pressure 5mTorr, temperature.The composition of this moment as 6 following kinds, is estimated its magnetized temperature dependency of situation separately.
Fe
xPt
100-x＝30，34，38，45，52，62
Figure 12 is that the low temperature of this Pt resilient coating of expression use synthesizes the magnetized temperature dependent figure in the FePt film.Fe with the high degree of order and big uniaxial magnetic anisotropy
38Pt
62The Tc of film is 320 ℃.This is to compare also low value with Tc=480 ℃ (Phys.Z., 36 (1935) 544) of being reported in the big capacity sample kind of stoichiometric composition.Thus, as can be known at the composition range of rich Pt side, can be at the synthetic FePt ordered alloy film of low temperature with the high degree of order, high magnetic anisotropy and Curie temperature also lower than big capability value.
In addition, Figure 13 is the figure of variation of the Curie temperature Tc of the expression Fe concentration x (at.%) that depends on the synthetic FePt film of the low temperature that has used the Pt resilient coating.Be considered to the sample of x=62 of disordered structure the value of Tc and unordered literature value (ASM, International, USA, (1995), p-371) unanimity mutually from the X-ray diffraction pattern.Near x=52 stoichiometric composition as can be known obtains the median of Tc with the unordered Tc mutually of ordered phase, does not carry out ordering fully.At x=38, can access Tc value with the literature value basically identical of ordered phase.
Utilizability on the industry
As above detailed description, according to the present application, by easy processing, add The processing of low temperature provides the film of the FePt with big uniaxial magnetic anisotropy. For as magnetic The film of storage medium provides than in the past more favourable technology.
There has been the big capacity magnetic storage of expectation in hard disk unit particular importance in the information storing device The market of medium, the application's invention can become for the huge invention of this market contribution.
Claims (8)
1. FePt magnetic thin film is characterized in that atomic component is expressed as following formula:
Fe
xPt
100-x
Wherein, 19＜x＜52.
2. FePt magnetic thin film according to claim 1 is characterized in that, has the L10 structure with the thickness of not enough 100nm.
3. FePt magnetic thin film according to claim 1 and 2 is characterized in that, is film forming on monocrystal substrate or its surperficial oxide-base bottom.
4. FePt magnetic thin film according to claim 3 is characterized in that, is across the film forming by the thin layer that constitutes more than a kind or 2 kinds in transition metal and the noble metal as basalis.
5. FePt magnetic thin film according to claim 4, wherein, thin layer is individual layer or multilayer.
6. FePt magnetic thin film according to claim 5, wherein, thin layer is by being constituted by the layer that constitutes more than a kind or 2 kinds among Fe, Ag, Ni, Co and the Cr with by the layer that constitutes more than a kind or 2 kinds among Au, Pt and the Cu.
7. the manufacture method of a FePt magnetic thin film, it is the manufacture method of each described FePt magnetic thin film of claim 1 to 6, it is characterized in that, at monocrystal substrate, be provided with the substrate of oxide-base bottom or be provided with on the substrate as basalis by the thin layer that constitutes more than a kind or 2 kinds in transition metal and the noble metal, in the scope of 240 ℃～500 ℃ of temperature, carry out spatter film forming.
8. the manufacture method of FePt magnetic thin film according to claim 7 wherein, is carried out spatter film forming under smaller or equal to 300 ℃ temperature.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003087789 | 2003-03-27 | ||
| JP87789/2003 | 2003-03-27 | ||
| JP313158/2003 | 2003-09-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1768401A true CN1768401A (en) | 2006-05-03 |
Family
ID=36743361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200480008379 Pending CN1768401A (en) | 2003-03-27 | 2004-03-25 | Fept magnetic thin film having perpendicular magnetic anisotropy and method for preparation thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1768401A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101609743B (en) * | 2008-06-18 | 2011-05-04 | 中国科学院半导体研究所 | Method for preparing parallel-oriented FePt magnetic nano-composite film |
| TWI452571B (en) * | 2011-09-29 | 2014-09-11 | Nat Univ Tsing Hua | Graded magnetic recording media and method for making the same |
| CN104947057A (en) * | 2015-06-04 | 2015-09-30 | 山西师范大学 | L10-FePt base multilayer film wide field linear magneto-resistance sensor and preparation method thereof |
| CN108010718A (en) * | 2016-10-31 | 2018-05-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Thin magnetic film deposition chambers and film deposition equipment |
-
2004
- 2004-03-25 CN CN 200480008379 patent/CN1768401A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101609743B (en) * | 2008-06-18 | 2011-05-04 | 中国科学院半导体研究所 | Method for preparing parallel-oriented FePt magnetic nano-composite film |
| TWI452571B (en) * | 2011-09-29 | 2014-09-11 | Nat Univ Tsing Hua | Graded magnetic recording media and method for making the same |
| CN104947057A (en) * | 2015-06-04 | 2015-09-30 | 山西师范大学 | L10-FePt base multilayer film wide field linear magneto-resistance sensor and preparation method thereof |
| CN104947057B (en) * | 2015-06-04 | 2017-08-08 | 山西师范大学 | L10FePt Quito tunic wide field linear magnetoresistance sensor and preparation method thereof |
| CN108010718A (en) * | 2016-10-31 | 2018-05-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Thin magnetic film deposition chambers and film deposition equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zeng et al. | Orientation-controlled nonepitaxial L1 0 CoPt and FePt films | |
| KR100690268B1 (en) | FePt MAGNETIC THIN FILM HAVING PERPENDICULAR MAGNETIC ANISOTROPY AND METHOD FOR PREPARATION THEREOF | |
| JP3950838B2 (en) | High density magnetic recording medium using FePtC thin film and method of manufacturing the same | |
| CN1249737C (en) | Thin permanent-magnet film and process for producing same | |
| JP3318204B2 (en) | Perpendicular magnetic film, method of manufacturing the same, and perpendicular magnetic recording medium | |
| CN1768401A (en) | Fept magnetic thin film having perpendicular magnetic anisotropy and method for preparation thereof | |
| JP2012164764A (en) | Magnetic material and method for manufacturing the same | |
| CN102194472B (en) | Super high-density perpendicular magnetic recording magnetic film and preparation method thereof | |
| EP1239494A2 (en) | Fept magnet and manufacturing method thereof | |
| JP6583814B2 (en) | Perpendicular magnetization film structure and manufacturing method thereof, magnetoresistive element using the same, manufacturing method thereof, and spintronic device using the same | |
| Thongmee et al. | FePt films fabricated by electrodeposition | |
| Chen et al. | Effect of interfacial diffusion on microstructure and magnetic properties of Cu∕ FePt bilayer thin films | |
| Sun et al. | Magnetic properties and microstructure of low ordering temperature L1 FePt thin films | |
| KR101308105B1 (en) | Perpendicularly magnetized thin film structure and method for manufacturing the same | |
| Ma et al. | High Coercivity FePtSiN Films With L1 $ _ {0} $–FePt Nanoparticles Embedded in a Si-Rich Matrix | |
| JP2003100515A (en) | Soft magnetic thin film for magnetic core with high saturation magnetization | |
| TWI274788B (en) | Method for fabricating L10 phase alloy thin film | |
| JP5390996B2 (en) | Rare earth highly oriented magnetic thin film and manufacturing method thereof, porcelain member and rare earth permanent magnet | |
| JP2003289005A (en) | Manufacturing method for highly oriented magnetic thin film | |
| JP4621899B2 (en) | Magnetic media | |
| JP2008041774A (en) | Magnetic substance film and method of manufacturing the magnetic substance film | |
| JP2003099920A (en) | MANUFACTURING METHOD OF THIN FePt MAGNETIC THIN FILM | |
| Shamis et al. | Materials science asPects of fePt-baseD thin filMs’ forMation | |
| JPH11288812A (en) | High coercive force r-irone-b thin-film magnet and manufacture thereof | |
| JPH0690977B2 (en) | Garnet thin film for magneto-optical recording media |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |