CN1743373A - 用于半导体组件的含有氧杂环丁烷化合物的组合物 - Google Patents

用于半导体组件的含有氧杂环丁烷化合物的组合物 Download PDF

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CN1743373A
CN1743373A CNA2005101098313A CN200510109831A CN1743373A CN 1743373 A CN1743373 A CN 1743373A CN A2005101098313 A CNA2005101098313 A CN A2005101098313A CN 200510109831 A CN200510109831 A CN 200510109831A CN 1743373 A CN1743373 A CN 1743373A
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Abstract

含有氧杂环丁烷化合物的组合物,该氧杂环丁烷化合物具有从氧杂环丁烷环去掉一个碳原子的酯、酰胺、脲、氨基甲酸酯、碳酸酯、或羰基功能团,在高温下固化的该组合物适用于半导体组件中的底层填充,特别是用于无铅焊料在电线相互连接处的粘合。适合的氧杂环丁烷化合物具有如上结构。

Description

用于半导体组件的含有氧杂环丁烷化合物的组合物
技术领域
本发明涉及含有氧杂环丁烷(oxetane)化合物的组合物,该组合物用于半导体组件的粘合,并且在连接到基片上的半导体模片组件中特别用作底层填充(underffill)物,其中,半导体模片和基片之间的缝隙用含有氧杂环丁烷化合物的组合物层填填充。
背景技术
在半导体制造中,将半导体电接头和半导体基片上对应的电接头进行连接。进行这些相互连接的一种方法是使用施加到电接头的焊料或聚合物。将接头排成一列连在一起加热由此得到的半导体和基片对接物,使焊料或聚合物再流动(reflow),并固化该连接。焊料或聚合连接之间的空隙用聚合体密封剂填充或底层填充,以加固互相连接并吸收压力。底层填充技术的两个突出的应用是在工业中已知作为倒装法的组件中,其中半导体芯片附着在导线框架上;和在球栅阵列(ball grid array)中,其中将一个或多个芯片的组件附着在印刷线路板上。
在某些操作中,设计底层填充方法使底层填充密封剂能在比焊料或聚合连接物质再流动的更高温度下固化,在流动温度217℃的情况下,导致互连不牢固(free),因而,底层填充密封剂的固化温度需要较此更高的温度。典型的底层填充组合物包括环氧树脂、环氧树脂/苯酚、环氧树脂/酸酐和氰酸酯体系。这些组合物不总是在足够高的温度下固化而底层填充操作所使用的聚合焊料不挥发,因此,需要有用于高温底层填充的性能材料。
附图简要说明
图1是化合物I的核磁共振图谱,图2是化合物II的核磁共振图谱,图3是化合物III的核磁共振图谱,图4是化合物IV的核磁共振图谱。
发明概述
本发明涉及一种在电子装置的装配中适于作为粘合剂或作为底层填充密封剂的组合物。该组合物含有一种具有一个或多个氧杂环丁烷环的氧杂环丁烷化合物,其中每个氧杂环丁烷环是从酯、酰胺、脲、氨基甲酸酯、碳酸酯、或羰基功能团中去掉的一个碳原子(即用氧杂环丁烷环来代替所述的碳原子)。
发明详述
氧杂环丁烷被认为是高活性的环醚,它能同时承受阳离子和阴离子的开环均相聚合作用。一般来说,氧杂环丁烷显示出低粘度,最低限度的固化收缩,并容易聚合。本发明的化合物,有适合的催化剂时,具有足够高的固化温度,在使用无铝(lead free)互连物质时适于作为底层填充密封剂。制备这些氧杂环丁烷树脂的优选起始物是3-乙基-3-(羟甲基)氧杂环丁烷(市售为来自Toagosei的OXT101),具有如下结构
Figure A20051010983100041
由3-乙基-3-(羟甲基)氧杂环丁烷和联合活性化合物制备的典型树脂包括如下得到的那些树脂:
3-乙基-3-(羟甲基)氧杂环丁烷与间-四甲基二甲苯二异氰酸酯的反应,得到化合物:
Figure A20051010983100042
                         化合物I;
3-乙基-3-(羟甲基)氧杂环丁烷与壬二酰氯的反应得到化合物:
Figure A20051010983100043
                         化合物II;
3-乙基-3-(羟甲基)氧杂环丁烷与对苯二酰氯的反应得到化合物:
Figure A20051010983100044
                         化合物III;
3-乙基-3-(羟甲基)氧杂环丁烷与1,3,5-苯基-三羰基三酰氯的反应得到化合物:
                        化合物IV
化合物I、III和IV分别以熔点为71℃、79℃和97℃的白色固体形式得到。化合物II以25℃时黏度小于100cPs的无色液体的形式得到。化合物II、III和IV含有极性酯键,化合物I含有氨基甲酸酯功能,这些功能有助于提高粘附力。
通过以10℃/min的斜率从室温到350℃加热每个样品,用热解重量分析(TGA)测定上述举例的氧杂环丁烷树脂的挥发性。每种树脂的失重在200℃时小于5%重量,这表明树脂在达到它们的固化温度前不会挥发到有害的程度。
用这些树脂制备制剂并通过不同的扫描热量法测量动力和热力性质对制剂分别分析。化合物II与5%重量的引发剂Rhodorsil 2074(引发剂)配方。化合物I、II和II与作为产品AROCYL10(来自Lonza集团)出售的氰酸酯(CE)以1∶1的摩尔比例、与和不与作为催化剂的乙酰乙酸铜硼化物(CuBAcAc)配制;也可以以1∶1的摩尔比例与-1,2,3,6-四氢-邻苯二甲酸酐(THPA)、与作为催化剂的CuBAcAc配制。
L10氰酸酯具有如下结构:
Figure A20051010983100052
结果在表1中公开并显示这些酯在高温下固化。结果还显示协同固化物质和催化剂的正确选择,可将含有氧杂环丁烷材料的制剂的实际固化温度调节至适合各种固化方案。
    制剂 (℃)固化温度   (J/g)聚合作用的热
    化合物II+引发剂     238     100
    化合物I+CE     258     215
    化合物I+CE+CuBAcAc     218     638
    化合物I+THPA+CuBAcAc     241     202
    化合物II+CE     207     415
    化合物II+CE+CuBAcAc     195     455
    化合物II+THPA+CuBAcAc     264     223
    化合物III+CE     242     336
    化合物III+CE+CuBAcAc     247     412
    化合物III+THPA+CuBAcAc     294     245
在另一个实施方案中,适用于本发明的底层填充组合物除含有氧杂环丁烷化合物外,还会含有氰酸酯化合物或树脂、固化引发剂、和任选含有填充剂。合适的氰酸酯化合物或树脂是市售的或通过现有技术中的已知方法合成的,可以是芳香族物质,也可以是脂肪族物质(参见例如美国专利4,785,075和4,839,442)。在这些实施方案中,除填充剂外,氰酸酯以高于组合物重量的90%的量存在。
在另一个实施方案中,适用于本发明的底层填充组合物除含有氧杂环丁烷化合物外,还会含有至少有一个碳碳双键、环氧或两者兼有的可固化树脂。合适的环氧物是市售的并由实施者不用过度的试验便可以选择。具有一个碳碳双键的可固化树脂包括例如由肉桂酰(cinnamyl)和苯乙烯类(styrenic)起始化合物、延胡索酸酯、马来酸酯、丙烯酸酯和马来酰亚胺衍生的树脂。在这些实施方案中,除填充剂外,环氧物或含有碳碳双键的树脂氰酸酯以高于组合物重量的90%的量存在。
合适的固化剂包括阳离子引发剂,例如碘鎓、氧鎓、锍、氧化锍(sulfoxonium)和各种其它鎓盐。其它合适的阳离子引发剂包括路易斯酸催化剂,如乙酰乙酸铜硼和乙酰乙酸钴硼;烷化剂,例如芳基磺酸酯,如甲基-对-甲苯磺酸酯和三氟甲基磺酸甲酯。光引发剂的优选系列是由Ciba专业化学产品公司出售的商标为Irgacure的那些光引发剂或由Rhodia出售的Rhodorsil 2074。当有引发剂时,它以制剂重量的10%存在。
合适的填充剂可以是导电的或非导电的。实例导电填充剂是碳黑、石墨、金、银、铜、铂、钯、镍、铝、碳化硅、氮化硼、金刚石和氧化铝。实例非导电填充剂是蛭石、云母、硅灰石、碳酸钙、氧化钛、沙子、玻璃、熔融硅石、发烟硅石、硫酸钡颗粒和卤代乙烯聚合物,例如四氟乙烯、三氟乙烯、亚乙烯基氟化物、乙烯基氟化物、亚乙烯基氯化物和乙烯基氯化物。填充剂通常以制剂重量的20%~90%存在。
这些组合物用作在模片和基底之间的底层填充材料。由构成典型的基底:金属,例如铜、银、金、镍、合金(例如、42铁/58镍合金)、镀银铜、或镀钯铜;有机材料,例如聚酰亚胺、聚酰胺、或聚酯;陶瓷和合成物或层状物(例如印刷线路板)。
各种底层填充操作是已知的并用于现有技术中,本说明书中公开的材料适用于这些操作。在典型的底层填充操作中,用金属或聚合焊料进行模片上的电线接头与基片上的相应电线接头之间的连接。将一块焊料或零散的聚合焊料放于基片的接头处,将接头排列并接触,加热该对接物使焊料再流动。在模片与基片之间产生的缝隙用底层填充密封剂填充以加固其连接。
有多种底层填充方法,这些方法是所属领域技术人员已知的方法。例如底层填充材料可以被单独放在模片与基片之间缝隙的***,通过毛细作用进入缝隙并填充至顶部。在另一种方法中,底层填充可被用于被切割成碎屑之前的硅水中,底层填充材料的固化可以在焊料再流动之后或随着焊料再流动同时发生,这取决于底层填充材料的固化温度和选择的方法。
合成实施例
化合物I的合成
Figure A20051010983100071
将间-四甲基二甲苯二异氰酸酯(24.43g,0.1mol)装入500ml烧瓶中,反应容器被放于N2层下并配有架空的搅拌器和冷凝器。将两滴二丁基锡二月桂酯加入混合物中,加热该混合物至60℃。将3-乙基-3-(羟甲基)氧杂环丁烷(23.20g,0.2mol)放于添料漏斗中,继续搅拌,通过添料漏斗在20分钟时间内滴加放热添加剂将温度维持在60℃。通过FT-IR分析异氰酸酯的耗量(最高峰在2258cm-1)监测反应。反应在4小时后完成,此后,将反应混合物溶解在二氯甲烷(150ml)中,加入硅胶(50g),过滤有机物并在真空下(60℃,0.3mmHg)除去溶剂,得到熔点为71℃的白色固体。该化合物的NMR数据显示在图1中。
化合物II的合成:
Figure A20051010983100081
将初始物料加到500ml的四颈圆形烧瓶:3-乙基-3-(羟甲基))氧杂环丁烷(25.76g,0.222mol)),三乙基胺(22.464g,0.222mol)),二甲基氨基嘧啶(2.712g,0.022mol))和二氯甲烷(180ml))。反应容器上配备有架空的混合器和冷凝器。继续搅拌至混合均匀。使温度保持在0℃和10℃之间,将壬二酰氯(25g,0.111mol)在1小时之内滴加到烧瓶中,通过FT-IR分析酰氯中的羰基耗量(最高峰在1801cm-1)和产物中酯基的形成(最高峰在1736cm-1)监测反应。反应在24小时后完成,用水(5×50ml)洗涤反应混合物,在MgSO4上干燥有机物,过滤,并在50℃水浴温度蒸发掉溶剂。然后将产物溶解在50/50己烷和乙酸乙酯混合物(250ml)中,加入硅胶(8g),过滤掉硅胶并在真空下(60℃,0.3mmHg)除去溶剂,得到室温下挥发度少于100mPas的澄清黄色液体(31g,0.081mol,67%)。该化合物的NMR数据显示在图2中。
化合物III的合成:
将初始物料加到500ml的四颈圆形烧瓶中:3-乙基-3-(羟甲基)氧杂环丁烷(40g,0.344mol),三乙基胺(34.809g,0.344mol),二甲基氨基嘧啶(4.203g,0.034mol)和二氯甲烷(300ml)。反应容器配备有架空的混合器和冷凝器。一直搅拌至混合均匀。使温度保持在0℃和10℃之间,将对苯二酰氯(35.0g,0.172mol)溶解在二氯甲烷中(100ml)并将该混合物在1小时之内滴加到烧瓶中,通过FT-IR分析仪酰氯中的羰基耗量(1801cm-1峰)和产物中酯基的形成(1736cm-1峰)监测反应。反应在24小时后完成,用水(5×50ml)洗涤反应混合物,用MgSO4干燥有机物,过滤并在50℃浴器温度下蒸发掉溶剂。产物与乙酸乙酯(300ml)混合,用干冰将温度降至-30℃,白色不溶固体(产物)沉淀出来,过滤产物并用己烷(3×30ml)洗涤,得到熔点为79℃的白色固体。该化合物的NMR数据显示在图3中。
化合物IV的合成:
Figure A20051010983100091
将初始物料加入500ml的四颈圆形烧瓶中:3-乙基-3-(羟甲基)氧杂环丁烷(40g,0.344mol),三乙基胺(34.809g,0.344mol),二甲基氨基嘧啶(4.203g,0.034mol)和二氯甲烷(300ml)。反应容器配备有架空的混合器和冷凝器。一直搅拌至混合均匀。使温度保持在0℃和10℃之间,将1,3,5-苯基三羰基三酰氯(30.442g,0.115mol)溶解在二氯甲烷中(100ml)并将该混合物在1小时之内加到烧瓶中,通过FT-IR分析中酰氯中的羰基耗量(1801cm-1峰)和产物中酯基的形成(1736cm-1峰)监测反应。反应在24小时后完成,用水(5×50ml)洗涤反应混合物,用MgSO4干燥有机物,过滤并在50℃水浴温度下蒸发掉溶剂。产物与乙酸乙酯(300ml)混合,用干冰将温度降至-30℃,白色不溶物(产物)沉淀出来,过滤产物并用己烷(3×30ml)洗涤,得到熔点为97℃的白色固体。该化合物的NMR数据显示在图4中。

Claims (7)

1、可固化的组合物包括一种具有一个或多个氧杂环丁烷环的氧杂环丁烷化合物,其中每个氧杂环丁烷环是从酯、酰胺、脲、氨基甲酸酯、碳酸酯、或羰基功能团中去掉的一种碳原子。
2、据权利要求1的可固化的组合物,进一步包括氰酸酯化合物。
3、据权利要求1的可固化的组合物,进一步包括环氧、具有碳碳双键的树脂、或两者兼有。
4、根据权利要求1、2或3的可固化的组合物,其中氧杂环丁烷化合物具有如下结构:
Figure A2005101098310002C1
5、根据权利要求1、2或3的可固化的组合物,其中氧杂环丁烷具有如下结构:
6、根据权利要求1、2或3的可固化的组合物,其中氧杂环丁烷具有如下结构:
7、根据权利要求1、2或3的可固化的组合物,其中氧杂环丁烷具有如下结构:
Figure A2005101098310002C4
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