CN1726433A - Compositions and processes for nanoimprinting - Google Patents

Compositions and processes for nanoimprinting Download PDF

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Publication number
CN1726433A
CN1726433A CN200380106100.2A CN200380106100A CN1726433A CN 1726433 A CN1726433 A CN 1726433A CN 200380106100 A CN200380106100 A CN 200380106100A CN 1726433 A CN1726433 A CN 1726433A
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polymer composition
poly
mould
film
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CN1726433B (en
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S·周
陈雷
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Princeton University
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Princeton University
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means

Abstract

The present invention is directed to new nanoimprint resist and thin-film compositions for use in nanoimprinting lithography. The compositions of the present invention permit economical high-throughput mass production, using nanoimprint processes, of patterns having sub-200 nm, and even sub-50 nm features.

Description

The composition and the method that are used for nano impression
Invention field
The composition that the present invention relates in nano-imprint process, use, nano-imprinting device, and nano-imprinting method.The invention still further relates to and use mouldable method for compositions, generation has ultra-fine patterns of features in the film that described mouldable composition carries on substrate surface.
Background technology
Lithography, especially photolithography is used to make SIC (semiconductor integrated circuit); Integrated optics, magnetic, mechanizing circuit; And microdevice.The formation of lithography pattern comprises the specific region of the film that chemical treatment is carried in substrate, then optionally, for example by dissolving in handling solvent, thereby remove or processing or untreated zone.In step subsequently, copying pattern in substrate or another material.Lithography can be used to make printed panel and resist image in conjunction with the resist imaging of routine.In lithography process, receive the film of pattern or image, often be called as resist.Resist can be or positive corrosion-resisting agent or negative resist.Positive photoresist more is soluble under the situation of irradiation to be handled in the solvent, and negative photoresist becomes insoluble under the situation of irradiation.The typical imprint lithography that is used for the integrated circuit manufacturing comprise by or make a large amount of rays through masks or scanning focused ray, with the radiant rays or the particle beams, as light, energy particle (for example electronics), photon or ion expose or irradiation photo-corrosion-resisting agent composition or film.Radiant rays or the particle beams change the chemical constitution of the exposure area of film, the result in handling solvent when washing or dipping, resist or exposure or unexposed zone dissolve.The resolution, particle that lithographic resolution is subjected to wavelength, the ray of particle is in the restriction of the performance of resist and intrabasement diffusion, resist.Carrying cost is effective simultaneously still to need to produce less pattern dimension in the lithography field.Particularly, the technology of being badly in need of developing low-cost is produced the structure that is lower than 50nm (sub-50nm) in batches.Term as used herein " is lower than the xxnm feature ", and (wherein xx be numeral) typically refers to size with at least one direction a plurality of structures less than xxnm.Term as used herein " is lower than the xxnm feature ", and (wherein xx be numeral) typically refers to size with at least one direction a plurality of structures less than xxnm.This exploitation will have many influences in many fields of engineering and science.
Developed many technology and satisfied these needs, but they all have shortcoming, and can not be used to produce in batches the lithographic structure that is lower than 50nm at low cost.The electron beam lithography proof has the lithography resolution of 10nm.A.N.Broers, J.M.Harper, and W.W.Molzen, Appl.Phys.Lett.33,392 (1978) and P.B.Fischer and S.Y.Chou, Appl.Phys.Lett.62,2989 (1993).But using this technology to produce the structure that is lower than 50nm in batches is unpractiaca economically, because its output is low inherently.X-ray lithography art (can have high output) proves the lithography resolution with 50nm.K.Early, M.L.Schattenburg, and H.I.Smith, MicroelectronicEngineering 11,317 (1990).But X-ray lithography art is not used for the commercial structure that is lower than 50nm of producing in batches as yet.Lithography based on scan-probe produces the structure that is lower than 10nm in extremely thin material layer.But this lithography is not obvious as the feasibility of fabrication tool.
Another nanostructured manufacturing process is called as nano impression or nano-imprint lithography art in the art, and it comprises the mould that protrudes and cave in having, and pushes composition on the deformable film that is coated with in the substrate.Referring to, United States Patent(USP) Nos. 5772905 and 6309580 for example.The thickness of Film Thickness Ratio under protruding feature under recess feature is thin.Therefore, on film, form embossment.The feature of this embossment and mould is conformally fitted.Handle this embossment, so that remove the thin part of striping, thus the lower base in the pattern of exposure and mould complementation.So the embossing pattern of producing can reappear in substrate or in another material.
The pattern that forms with the nano-imprint lithography art is by mould, rather than any radiation exposure is determined.The nano-imprint lithography art can be eliminated the restriction of many resolution of forcing in the lithography of routine, as the wavelength restriction, the backscattering of particle and light disturb in resist and substrate.
There has been about many decades in this low-cost batch manufacturing technology.Use nanometer embossing, on plastics, impress out the feature of 1 micron number magnitude routinely.Based on the compact disc of impression polycarbonate, be an example of the commerce application of this technology.Other example is polymethylmethacrylate (PMMA) structure of impression, and it has the characteristic dimension of making the 10 micron number magnitudes that micromechanical component uses.M.Harmening etc., PROCEEDINGS IEEE MICRO ELECTROMECHANICAL SYSTEMS, 202 (1992).Also used the polyester micromechanical component of molding with tens of micron feature sizes.H.Li and S.D.Senturia, PROCEEDINGS OF1992 13 THIEEE/CHMT INTERNATIONAL ELECTRONIC MANUFACTURINGTECHNOLOGY SYMPOSIUM, 145 (1992).But stamping technique still can not provide the 25nm structure with high length-diameter ratio.
Because nanometer embossing is based on passing through mould, make the polymer resist distortion, rather than chemical property (E.Reichmanis and the L.F.Thompson of the interior resist of change lithography, 89CHEM.REV.1273-1289 (1989)), therefore need the specific polymer resist composition of exploitation, described polymer resist composition can easily be out of shape and have with at the excellent adhering fluid ability of suprabasil mould with can be retained in the substrate after mold separation.Disadvantageously, the physical property of the film composite that uses in the nano-imprint process of standard causes the degree of deformation that reduces resolution.When using higher temperature to increase the flowability of polymer film, so that it can flow in the nano die time, causes stress.Term as used herein " nano die " typically refers to size with at least one direction mould less than a plurality of structures of 200nm.On the other hand, if reduce temperature, then since the flowability that reduces cause film really accurately conformal fit on the little feature in the mould.
The requirement of nano-imprint lithography material (" nano impression resist ") is different from typically the polymeric material that uses fully in the plastic technology of routine such as injection moulding.For example, the nano impression resist typically requires to be processed into uniform film in substrate.In addition, the rheology (being flow performance) of the polymeric material that deposits from the teeth outwards with the polymer thin form membrane usually is different from the rheology of bulk polymer material fully.
U.S. Patent No. 5772905 discloses the purposes of polymethylmethacrylate (" PMMA ") as the nano impression resist, and it is rotated mold filing on silicon chip advantageously, has good demolding performace and has low percent thermal shrinkage.Disclosed nano-imprinting method requires the PMMA nano impression resist of heating spin coating to arrive than the remarkable high temperature (about 200 ℃) of PMMA glass transition temperature (" Tg ") (about 105 ℃), and making with softening resist can nano impression.After being lower than Tg, remove metallic mold for nano-imprint at cooling nano impression resist.This heating and cooling require the processing time unfriendly and can cause the adjustment and the corresponding problem of process equipment, and this problem comes from thermal expansion and contraction.Therefore need exploitation to overcome the nano impression resist of these problems.
U.S. Patent No. 6309580 discloses the nano-imprint lithography art, wherein with the release materials pre-service mould that helps to remove mould, thus the resolution of raising image.Use release materials also to protect mould,, and do not demonstrate the wearing and tearing of its fine-feature so that it can use repeatedly.After handling embossment, the exposed portion of substrate surface has the feature that is lower than 200nm.Because the mould pre-service is extra step, preferably from nano-imprint lithography technology, it is saved, make output, therefore need exploitation nano impression resist to increase, it provides the image resolution ratio of raising under the situation that does not need the pre-service nano die.
Therefore, need to continue extra improvement technology, device, material and scheme in the nano-imprint lithography art, using.The new film composite that has overcome the above problem that for example, need in nanometer embossing, use.Therefore, need provide the nano impression resist, it does not require the deep heating and cooling and the demoulding from untreated mould easily.
Summary of the invention
In order to overcome the problem relevant with the nano impression resist, promptly do not require the deep heating and cooling and the demoulding from untreated mould easily, the present invention is provided in especially to be carried on and forms method of patterning in the suprabasil film.In various aspects of the present invention, provide following method:
Obtain mold materials, described mould is harder with respect to film, described film comprise can be under less than 200 ℃ temperature polymer composition by described die deformation;
The depression that this mould has first and second protruding features that separate each other and forms thus, wherein first and second protruding features have the shape that forms mould pattern with depression and at least one mould pattern lateral dimension less than 200nm are provided;
Under molding pressure, impel mould to form film;
Thickness below the protruding feature of mould descends, thereby forms mould pattern in film;
From this film, remove mould; With
From film, remove the zone that reduces thickness, thereby expose the part substrate surface of below, thin zone, so that the expose portion of substrate surface copy mold pattern and have at least one lateral dimension basically less than 200nm.
In aspect the present invention is further, the method of the size of at least one direction of formation less than the multiple structure of 200nm is provided, this method comprises the steps: to use die marks nano impression resist, described nano impression resist have can be under less than 200 ℃ temperature polymer composition by described die deformation.In this one side of the present invention, in case remove described mould, polymer composition can keep multiple structure.
In additional aspect of the present invention, film with nano impression resist is provided, described nano impression resist comprises can be by the polymer composition of die deformation under less than 200 ℃ temperature, and this mould can form the multiple structure of the size of at least one direction less than 200nm.In this one side of the present invention, in case remove described mould, polymer composition can keep described multiple structure.
In another aspect of the invention, the nano impression resist is provided, it comprises can be by the polymer composition of die deformation under less than 200 ℃ temperature, and this mould can form the multiple structure of the size of at least one direction less than 200nm.In this one side of the present invention, in case remove described mould, polymer composition can keep described multiple structure.
In various aspects of the present invention, be provided at the new film composite that uses in the nano-imprint lithography art.Composition of the present invention allows to use nano-imprinting method, and economic high yield ground is produced in batches has the patterns of features less than 50nm.Various composition of the present invention is selected from: (a) enough soft under environmental baseline, perhaps in case in addition heating can enough soften to the thermoplastic that flows in the nano die feature (the further polymerization of this thermoplastic polymer, crosslinked, graft crosslinking or its combination); (b) liquid or flowable composition (for example polymkeric substance, oligomer, monomer, crosslinking chemical, lubricant and plastifier), it can flow in the nano die feature, and use chemical mode (for example crosslinked, polymerization or these two) subsequently or use (for example transition state cooling by first order of hot physics mode, as known in segmented copolymer, perhaps crystallization, perhaps these two; Perhaps, cool off) as glass transition point by the transition state of second order; Perhaps can harden by chemistry and the two the combination of hot physics mode.
The composition of several aspects of the present invention comprises plastifier, inner pattern releasing agent applicable and other adjuvant.Use plastifier and inner pattern releasing agent applicable can make treatment temperature demolding performace low and die surface good.Other adjuvant can be included in the composition of the present invention, with the stability of improvement resist and other physics and the chemical property of resist, comprising for example rheology control adjuvant and antioxidant.Composition of the present invention is used to form micron or nano-copy product.Term as used herein " micron duplicate " is meant the relief surface pattern that can shift greater than about 200nm feature.Term as used herein " nano-copy product " is meant the relief surface pattern that can shift less than about 200nm feature.
In various aspects of the present invention, provide composition as the single or multiple lift structure.In this embodiment, pattern can be used on one deck, by etching or other method, it is transferred on the lower layer then.
In certain aspects, provide a kind of composition, the method that said composition makes high yield ground produce in batches becomes possibility, has the 25nm of being lower than patterns of features for generation, and this adopts method described in the prior art is unreachable.The flowability and the stability of various compositions especially merit attention in by the mould with different characteristic size pattern that provides aspect these of the present invention.Therefore, opposite with the lithography of routine, nano-imprint lithography technology involves low temperature.Because in nano-imprint process, film composite flow in the mould, so they have good low temperature flow ideally requiredly.Present composition excellent fluidity at low temperatures significantly is improved with respect to the film composite of prior art.
In aspect the present invention is further, composition of the present invention provides film highly uniformly in substrate.This high uniformity coefficient has been improved nano-imprint process widely.Composition of the present invention further improves nano-imprint process, because they demonstrate good bonding of substrate, and meanwhile demonstrates the performance of the good demoulding from mould.
Exemplify the detailed description of embodiment
Term " polymer " as used herein " expression has the molecule of the two or more unit that are derived from same monomer component, so that " polymkeric substance " mixes the molecule that is derived from the different monomers component, forms multipolymer, terpolymer, multicomponent copolymer.
Term as used herein " be derived from ... the unit " be meant the polymer molecule synthetic according to known polymerization technique, wherein polymkeric substance contains the unit that is derived from its constituent monomers.
Term as used herein " molecular weight " is meant the weight-average molecular weight of polymer molecule, and this measures by gel permeation chromatography.
Term as used herein " grafting coupling agent " is meant the multifunctional molecule that can form a plurality of covalent bonds between a base polymer molecule and another kind of polymer molecule.
Term as used herein " crosslinking chemical " is meant the multifunctional molecule that can form two or more covalent bonds between same base polymer molecule.
Term as used herein " (methyl) alkyl acrylate " is meant alkyl acrylate and these two kinds of compounds of alkyl methacrylate monomer.
Term as used herein " part " intends referring to " weight portion ".Except as otherwise noted, " total weight portion " not necessarily to add up be 100.
Term as used herein " wt% " intends referring to " percentage umber by weight " that it is 100 that wherein total umber is added up.
All scopes described herein comprise end points and can in conjunction with.
Form method of patterning (described pattern has in the film that carries the feature less than 200 nanometers in substrate) and comprise various steps, comprising obtaining mold materials, described mould is harder with respect to film, described film comprise can be under less than 200 ℃ temperature polymer composition by described die deformation.In these methods, this mould has first and second protruding features that separate each other and the depression that forms thus.First and second protruding features typically have the shape that can form mould pattern and at least one mould pattern lateral dimension less than 200nm are provided with depression.In these methods, under molding pressure, impel mould to form film, thereby the thickness below the protruding feature of mould descend, and forms mould pattern in film.From this film, remove the further step of mould; With from the zone that reduces thickness, remove striping, expose the part substrate surface of below, thin zone, so that the expose portion of substrate surface copy mold pattern and have at least one lateral dimension basically less than 200nm.At United States Patent(USP) Nos. 5772905,6309580,6482742,6518189, U.S. Patent Application Publication Nos.2002/0132482A1,2002/0167117A1,2003/0034329A1,2003/0080471A1,2003/0080472A1,2003/0170995A1,2003/0170996A1; With the additional detail that provides among international application Nos.PCT/US01/21005 and the PCT/US03/08293 about nano-imprint lithography technology, its disclosure is introduced by reference in full at this.
Can by various polymkeric substance known in the polymer arts, oligomer, monomer, crosslinking chemical, graft crosslinking agent, thinning agent, initiating agent, hardening agent and the preparation of other adjuvant can be under less than 200 ℃ temperature suitable polymers composition by described die deformation.Typically, for example polymer composition by have less than 200 ℃ glass transition temperature or under less than 200 ℃ temperature for liquid, will be softening relatively under less than 200 ℃ temperature.Also can use under the serviceability temperature of nano impression resist polymer composition as liquid or soft state.Before nano-imprint lithography subsequently, this liquid or softening polymer composition will typically be accepted curing condition.Suitable curing condition comprises chemical reaction, as the combination of cross-linking reaction, graft reaction, condensation reaction, acid-base reaction, polymerization and any of these.Hot physical reactions such as crystallization and ordering when in case the example of suitable curing condition also comprises heating or cooling polymer composition.Combination chemical and hot physical reactions also think provide can be under less than 200 ℃ temperature suitable polymers composition by described die deformation.
The suitable polymers composition that uses in various embodiments of the present invention comprises homopolymer, multipolymer, random copolymers, segmented copolymer, graft copolymer, telechelic polymer, star polymer and dendrimer, for example so-called " star burst (starburst) " polymkeric substance, and these any combination.Suitable polymers typically comprises: poly-(acrylic acid C 1-C 20The alkane ester) and poly-(methacrylic acid C 1-C 20The alkane ester) (the two also is referred to as (methyl) acrylic acid C together 1-C 20The alkane ester), its representative instance comprises poly-(methyl methacrylate), poly-(methacrylic acid octadecane ester), poly-(methyl acrylate), poly-(n-butyl acrylate), poly-(butyl methacrylate), poly-(isobutyl methacrylate); Comprise (methyl) acrylic acid C 1-C 20The multipolymer of alkane ester units, its representative instance is poly-(stearic acid vinyl ester)/poly-(methyl methacrylate), gathers (methyl cetyl siloxane)/poly-(methyl methacrylate), gathers (methacrylic acid octadecane ester)/gather (methyl methacrylate), poly-(butyl methacrylate-be total to-isobutyl methacrylate), poly-(butyl methacrylate-be total to-methyl methacrylate), polycarbonate, as gathering (bisphenol a carbonate); Polysiloxane is as poly-(methyl cetyl siloxane); Various polyvinyls are as poly-(vinyl acetate), poly-(stearic acid vinyl ester); Various alkylene oxide polymers are as poly-(oxirane) and poly-(epoxypropane); Polycaprolactone; Styrene polymer is as poly-(styrene), poly-(α-Jia Jibenyixi), and contains cinnamic multipolymer as poly-(dimethyl siloxane-altogether-α-Jia Jibenyixi); Graft copolymer is as poly-(ethylene-co-vinyl acetate)-grafting-(t-maleic anhydride); Halogen-containing polymkeric substance and multipolymer are as gathering (vinyl chloride), poly-(vinylidene), poly-(chlorotrifluoroethylene), poly-(dichloroethylene), poly-(vinyl chloride-be total to-vinylidene); Poly-(vinyl chloride-altogether-vinylidene); Bond with any blend, grafting or the block of one or more polymkeric substance.
The suitable polymers composition also can comprise thermoset resin.The many commercially available thermoset resin that can use in the present invention comprises: alkyd resin, allyl diglycolcarbonate resin, diallyl isophthalate resin, diallyl phthalate resin, melamine resin, melamine/phenol resin, phenolics, vinylester resin; Epoxy resin; Unsaturated polyester resin; Cyano-acrylate resin; Melamine formaldehyde resin; Urethane resin; Polyimide resin, polyphenol resin; And combination.
Suitable polymers composition of the present invention also can comprise one or more oligomer.Term as used herein " oligomer " is meant about 5 compounds that monomeric unit is formed by 2-, and all these monomeric units can be identical or different.Suitable oligomer comprises those with reactive functionalities and non-reacted functionality.In U.S. Patent No. 6306546, provide by maximum 5 (methyl) acrylic acid C 1-C 20The suitable reactivity that alkane ester monomeric unit is formed and the example of non-reacted oligomer, its disclosure is introduced it by reference in full at this.Other suitable oligomer comprises reactive polysiloxane oligomers, reactive or its any combination.
Suitable polymers and oligomer also can comprise so-called " liquid rubber " (" LR "), and it is widely used in the thermosets.Suitable LR is made up of the flexomer chain with at least one non-functionality aromatic end group.Although polymer chain is flexible by providing less than about 25 ℃ glass transition temperature (Tg), usually being typically Tg will be less than 10 ℃, more typically less than 0 ℃, even more typically less than-20 ℃ with further typically less than-40 ℃.Suitable LR typically has low viscosity in uncured liquid resin prescription.Suitable LR also tends in uncured liquid resin prescription miscible, yet, also can use immiscible prescription.In some embodiments, when providing thermoset resin in polymer composition, in case solidify (crosslinked), then LR can be separated.This being separated typically forms the rubber-like microcell in the polymeric matrix of thermoset resin.Yet, in other embodiments, wish to minimize or avoid this being separated.At Mulhaupt, R., " Flexibility or Toughness ?-The Design ofThermoset Toughening Agents ", Chimia44 (1990) discloses all kinds of LR among the pp.43-52.Also disclose the example of liquid rubber in the european patent application No.EP1270618 of LaFleur, it is made up of the flexomer chain with at least one non-functionality aromatic end group.
In some embodiments of the present invention, polymkeric substance and oligomer can contain functional group.In these embodiments, functional group can be positioned at molecule Anywhere, comprising its end group (being expressed as " terminal functionality " or " functional group dead-end ").The LR of commercially available functional group dead-end comprises the multipolymer (being called " CTBN " resin) of the carboxy blocking of butadiene and acrylonitrile monemer, with the amino-terminated multipolymer (being called " ATBN " resin) of butadiene and acrylonitrile monemer, also be called as " VTBN " and " ETBN " respectively with the similar multipolymer of vinyl and epoxy functional end-blocking.Useful especially composition comprises the epoxy resin with one or more oligomer blend.
In related embodiment of the present invention, provide to form and have the method for at least one direction size less than the multiple structure of 200nm, this method comprises the steps: to use die marks nano impression resist, this nano impression resist have can be under less than 200 ℃ temperature suitable polymers composition by this die deformation.In these embodiments, in case remove mould, polymer composition can keep multiple structure.
In these and other embodiment, polymer composition can pass through this die deformation, typically under, more typically under less than about 150 ℃ temperature and even more typically under less than about 100 ℃ temperature, can pass through this die deformation less than 200 ℃ temperature.The suitable polymers composition typically comprises photo curable polymer composition, thermoplastic polymer composition, thermoset polymer compositions, or these any combination.
In a single day term as used herein " photocurable " is meant wherein and applies photon that as light, for example ultraviolet light (" UV ") causes the composition of chemical reaction.Suitable photo curable composition typically comprises at least a monomer and a kind of light curing agent.Can use any monomer described herein or the combination of monomer suitably.Suitable light curing agent comprises typically by radiant rays, the typically polymerization initiator, crosslinking chemical and the graft crosslinking agent that activate of ultraviolet light.In a single day suitable photo curable polymer composition typically is exposed under the radiant rays and solidifies in the time of about 1 millisecond-Yue 2 milliseconds, although think that set time can be beyond this scope.Suitable photo-curable polymer composition has the viscosity that is typically greater than 100 centipoises (cps), although think that viscosity can be beyond this scope.Photo curable polymer composition has low suitably adhesional energy to die surface also requiredly, with the easy demoulding from the mould of nano impression resist that curing is provided.Can be by selecting to have the polymer composition of low relatively interaction energy to die surface, for example by in polymer composition, comprising siliceous or fluorine component, thereby provide suitable low adhesional energy.The suitable ingredients of polymer composition that can be by selecting to have low adhesional energy, for example polymkeric substance, monomer, oligomer and light curing agent, thus low adhesional energy is provided suitably.More typical is that inner pattern releasing agent applicable is included in this polymer composition.The example of inner pattern releasing agent applicable provided herein.The example of suitable light curing agent comprises IrgaCure 184.When crosslinking chemical (" cross-linking reagent ") when being included in the polymer composition, polymer composition is typically crosslinked in less than about 2 seconds.Required photo-curable polymer composition can be crosslinked in the presence of oxygen.
In one embodiment of the invention, polymer composition comprises the acrylic monomers of about 80wt%-90wt%, as methyl methacrylate monomer, about 10-20wt% oligomer, as be derived from the oligomer of siloxane, dimethyl silane oxygen base co-polymer, isobornyl methacrylate, MATS, TMPTA, perhaps siliceous oligomer is as acrylic acid silica alkane; The crosslinking chemical of the about 2wt% of about 0.01-is as IrgaCure 819; And light trigger, as IrgaCure 184.In this embodiment, the monomer of big part by weight typically plays the effect of dissolution with solvents all components.The viscosity of said composition under 25 ℃ typically is at least about 2 pools, typically in about 10 pool-Yue 30 pool scopes.
Suitable thermoplastic polymer composition typically comprises above-described any polymkeric substance.The glass transition temperature of suitable thermoplastic polymer is typically less than 100 ℃.The weight-average molecular weight of suitable thermoplastic polymer is typically in about 5000g/mol to 1000000g/mol scope, but the weight-average molecular weight of suitable thermoplastic polymer can be beyond this scope.The example of suitable thermoplastic polymer typically comprises any non-crosslinked described herein or lightly crosslinked polymkeric substance.
In other embodiments of the present invention, a kind of film with nano impression resist is provided, described nano impression resist comprise can be under less than 200 ℃ temperature polymer composition by die deformation, this mould can form size with at least one direction multiple structure less than 200nm.In this one side of the present invention, in case remove mould, this polymer composition can keep multiple structure.
In other embodiments of the present invention, the nano impression resist is provided, described nano impression resist comprise can be under less than 200 ℃ temperature polymer composition by die deformation, this mould can form size with at least one direction multiple structure less than 200nm.In this one side of the present invention, in case remove mould, this polymer composition can keep multiple structure.
In one embodiment, the invention provides in the nano-imprint lithography art use in case in substrate the nano impression resist composition and the film of pattern.Composition of the present invention allows to form the nanoscale features form, as the Thinfilm pattern of hole, pillar or groove.These nanoscale features typically have the minimum dimension of the nm of about 25nm, and the degree of depth that surpasses 100nm is better than sidewall smoothness and the approaching perfectly corner of an angle of 90 degrees of about 3nm.Composition of the present invention can use in nano-imprinting method, forms to have the structure that is lower than 10nm of high length-diameter ratio.
One embodiment of the invention comprise material deposition and unload (lift-off) method, with the wide metal wire of the 100nm that makes the 200nm cycle (period) and the metal dots of the 25nm diameter in 125nm cycle.The resist pattern that can use the present invention to generate also can be used as mask, etching of nano structure in substrate (having size less than 1000nm, preferably less than the feature of 500nm).Composition of the present invention also allows to make bigger film surface area, still keeps simultaneously the high resolution and the refuse of minimizing, described refuse to come from when removing from nano die because of due to the damage of film.The present invention also can improve in high quality nano-imprinting method in addition more large-area mould (greater than 6 inches) on.
In some embodiments of the present invention, nanometer resist composition of the present invention comprises: (A) be selected from one or more materials in polymkeric substance, oligomer and the monomer mixture.Randomly, composition of the present invention can optionally further comprise other adjuvant, as one or more (B) one or more plastifier; (C) one or more inner pattern releasing agent applicables; (D) other adjuvant is as bulking agent, lubricant and stabilizing agent.
In other embodiments, provide various nano impression resist compositions by various nano-imprint process flow processs of the present invention.For example, for the viscosity and the mobile hot padding that wherein utilize temperature with the control moldable material, typically do not require light trigger, although can use the combination of light and heat initiating agent, for example light trigger, hot light trigger or these two can be used for back impression UV exposure or baking to improve physical strength.In these embodiments, also can add crosslinking chemical makes nano impression resist composition crosslinked.
In various nano-imprinting methods, people also can use or individual layer nano impression compound substance or multilayer materials in the present invention.In the multilayer embodiment, layer performance can be mutually the same or different.For example, the pattern that generates at the top layer place can be by etching or chemical microelectronics lithography field in other known design transfer routine techniques transfer on the bottom.
A organizes component: be selected from one or more materials in polymkeric substance, oligomer and the monomer mixture
This group comprises the different polymkeric substance with homopolymer or copolymer structure, described polymkeric substance can be random, block, alternately, grafting, distant pawl, star, dendrimer, for example dissaving polymer and oligomer; Polymkeric substance with different molecular weight; Oligomer; Different monomers; The potpourri of polymkeric substance, oligomer and monomer; Non-reacted system; Reactive systems (among UV, heat and other treatment process or afterwards, this material hardens maybe can not flow); (above-mentioned system) blend polymer; The material of anti-reactive ion etching; Mouldable polymkeric substance and reactive oligomers (monomer); And these any combination.
The example that be applicable to the present composition, has a polymkeric substance of different main chain backbones include, but are not limited to gather (methyl methacrylate) (PMMA), poly-(bisphenol a carbonate) and gather (methyl cetyl siloxane).
The example that be applicable to the present invention, has a suitable polymers of different side chains comprises, but be not limited to PMMA, poly-(methyl acrylate), poly-(n-butyl acrylate), poly-(methacrylic acid octadecane ester), poly-(isobutyl methacrylate) and poly-(butyl methacrylate).
Typically, the weight-average molecular weight of suitable polymers component is typically in the about 1000000g/mol scope of about 1000g/mol-, typically in the about 200000g/mol scope of about 5000g/mol-, more typically in the about 100000g/mol scope of about 10000g/mol-and even more typically in the about 50000g/mol scope of about 20000g/mol-.The example that be applicable to the present invention, has a polymkeric substance of different weight-average molecular weight includes, but not limited to gather (vinyl acetate 110000g/mol) and poly-(vinyl acetate 650000g/mol).
Various polymer morphologies also are applicable to the present invention, for example crystallization, hemihedral crystal, amorphous, glassy state and the isolated area of finding in the block of ordering and graft copolymer usually that contains microfacies.The example that be applicable to the present invention, has a polymkeric substance of different shape include, but not limited to gather (stearic acid vinyl ester) (PVS), poly-(oxirane), polycaprolactone and poly-(α-Jia Jibenyixi).Also comprise high polymer structure (as graft copolymer, segmented copolymer, comb polymer, star polymer, star burst polymkeric substance etc.), these have two or more polymer chains or chain segment separately.Under situation, be typically the aromatic end group that maximum all end of the chains can contain non-sense such as these high polymer structures.
The example that is applicable to suitable polymers blend of the present invention includes, but not limited to PVS/PMMA; Poly-(methyl cetyl siloxane)/PMMA; With poly-(methacrylic acid octadecane ester)/PMMA.
The example that is applicable to suitable random copolymers of the present invention includes, but not limited to gather (butyl methacrylate-altogether-isobutyl methacrylate); Poly-(butyl methacrylate-altogether-methyl methacrylate); Poly-(dimethyl siloxane-altogether-α-Jia Jibenyixi); The multipolymer of (methyl) isobornyl acrylate; The multipolymer of isobutyl methacrylate; Poly-(ethylene-co-vinyl acetate)-grafting (t-maleic anhydride); Poly-(vinyl chloride-altogether-vinyl acetate); Poly-(vinyl chloride-altogether-IVE) and poly-(chlorotrifluoroethylene-altogether-vinylidene).
Be applicable to that monomer of the present invention comprises " high Tg " and " low Tg " monomer.Low Tg monomer typically is selected from following: acrylic acid C 1-C 20Alkane ester such as butyl acrylate, ethyl acrylate, acrylic acid n-octyl and 2-EHA; Diene monomers such as butadiene and isoprene; Siloxanyl monomers such as dimethyl siloxane, vinyl acetate monomer; And multipolymer.The example of high Tg monomer typically comprises methacrylic acid C 1-C 8Alkane ester, isobornyl methacrylate, phenylethylene, vinyl cyanide and acid imide.
In some embodiments, wish to be chosen in the parts by weight of low Tg monomer in the polymer composition, so that nano-imprinted layers is not too soft.Therefore, seek under the situation of harder nano-imprinted layers therein, wish acrylic acid C 1-C 20The parts by weight of alkane ester typically account for polymerization polymer composition be not more than 50, more typically be not more than 40, even more typically be not more than 30 and the most typically be not more than 20wt%.
Can be incorporated into the various comonomers in the polymer composition of the present invention, comprise the ethylenically unsaturated monomers that one or more are selected from following monomer: (methyl) acrylic acid, (methyl) vinyl cyanide, (methyl) acrylamide; (methyl) acrylic acid 2-(perfluoroalkyl) ethyl ester, (methyl) acrylic acid 2-(the plain alkyl of perhalogeno) ethyl ester; (methyl) acrylic acid C 1-C 20The alkane ester; Alkyl (ethyleneoxy group) n (methyl) acrylate; Amino (methyl) acrylate; (methyl) aryl acrylate is comprising a plurality of rings and substituted ring; Conjugated diene; Silane; Siloxane; Vinyl-arene is comprising a plurality of rings and substituted ring; Vinyl benzoic acid; Vinyl acetate; Vinethene; Vinyl halide; Vinyl phosphoric acid; Vinyl sulfonic acid; The vinyl acid anhydrides; Vinylidene halide; (methyl) acrylic acid fluoro phenyl ester; Vinyl trimethylsilane; With these any combination.
Various comonomers typically are selected from: vinyl-arene (for example styrene), alkyl methacrylate (for example methyl methacrylate) and acrylonitrile monemer.The solubleness of these comonomer auxiliary adjustment liquid rubbers in uncured liquid thermosetting resin.In some embodiments of the present invention, suitable monomers and oligomer comprise, lauryl methacrylate; Epoxy resin; Acrylic acid (methacrylic acid) oligomer; Reactive polysiloxane oligomers; Fluorinated acrylic ester/methacrylate; And trimethylolpropane triacrylate/methacrylate/three-/four-allyl ether.
Other adjuvant
Composition of the present invention can comprise the adjuvant that other is suitable, comprising, but be not limited to plastifier, inner pattern releasing agent applicable, lubricant, antioxidant, processing aid.
B organizes component: plastifier
Term as used herein " plastifier " is meant the compound that can reduce its Tg when with the polymer composition blend.The example that is applicable to suitable manufacturing methods of the present invention includes, but not limited to the hexane diacid derivant, as hexane diacid two Permethyl 99A ester and dinonyl adipates; Azelaic acid derivant is as azelaic acid two isotyl ester and di n hexyl azelates; Benzoic acid derivative is as dibenzoic diglycol laurate and dibenzoic acid Macrogol 200 ester; Epoxides is as epoxidised soybean oil; Glycerol derivatives such as triacetin; Isophthalic acid derivatives is as dimethyl isophthalate; The myristic acid derivant is as isopropyl myristate; The oleic acid derivant is as oleic acid propyl ester and tetrahydrofurfuryl oleate; The alkane derivant is as the chloro alkane; Phosphoric acid derivatives is as triphenyl phosphate; Phthalic acid derivatives is as diisooctyl phthalate and diisooctyl phthalate; The castor oil acid derivant is as the castor oil acid propylene glycol ester; Sebacic acid derivative is as dibutyl sebacate; Stearic acic derivative is as butyl stearate and propylene glycolmonostearate; Succinic acid derivative is as diethyl succinate; And sulfonic acid, as adjacent-and right-toluenesulfonamide.
C organizes component: inner pattern releasing agent applicable
Term as used herein " interior remover " and " inner pattern releasing agent applicable " as used herein synonym are meant when blend in polymer composition, can reduce the polymer composition compound bonding to the surface.Although do not plan to be subjected to the constraint of specific theory of operation, but think that inner pattern releasing agent applicable of the present invention moves between metallic mold for nano-imprint and the nano impression resist at the interface, thereby reduce the adhesional energy of nano impression resist composition the metallic mold for nano-imprint surface.The example that is applicable to suitable inner pattern releasing agent applicable of the present invention includes, but not limited to polysiloxane and perfluorinate surfactant; The polyethers or the polyester that contain polysiloxane; Perfluorinate (methyl) acrylate; Reactive and non-reacted main chain; Fluorination reagent, as ZONYL FSE (Dupont), ZONYL FS-62 (Dupont), FC-170-C (3M) and FC-95 (3M); Siloxy group reagent, as GP-187, GP-277, GP-287 (Innovative Polymer Technology), and 55-NC (Dexter); The polymkeric substance that contains siloxane; And combination.
D organizes component: bulking agent, lubricant and stabilizing agent
Be applicable to that other adjuvant of the present invention comprises, but be not limited to, reactive ion (" RIE ") resist, antistatic agent, stabilizing agent, bulking agent, fire retardant and lubricant.These extra adjuvants can be included in the composition of the present invention in order to improve other performance of resist.
Initiating agent
The example that is applicable to the initiating agent of the present composition includes, but not limited to thermal initiator, as benzoyl peroxide (BPO) and azoisobutyronitrile (AIBN); With UV and other radiation initiators, as benzophenone, 2-hydroxy-2-methyl-1-phenyl-1-acetone and 1-hydroxyl hexyl phenyl ketone.
Can be used for many suitable polymers compositions of the present invention by at least a composition the in above-described each component in A, B, C and the D component group.In some embodiments of the present invention, the nano impression resist comprises the about 100wt% polymer composition of about 20wt%-, the release agent of the plastifier of about at most 80wt% and about at most 30wt%.In other embodiments, the nano impression resist comprises the oligomer of the about 50wt% of about 1wt%-, the crosslinking chemical of the about 10wt% of about 0.01wt%-, the light trigger of the monomer of the about 90wt% of about 50wt%-and the about 2wt% of about 0.01wt%-.In some such embodiments, polymer composition can provide the structure that is lower than 50nm in the nano impression resist.Ideally, at nano-imprint process glycol ester, in a single day the polymeric material in these embodiments is in it more than glass transition temperature when removing from mould.
In some embodiments, the film that comprises the nano impression resist is provided, described nano impression resist comprise can be under less than 200 ℃ temperature polymer composition by die deformation, described mould can form size with at least one direction multiple structure less than 200nm, in case remove described mould, described polymer composition can keep described multiple structure.In some such embodiments, the nano impression resist further comprises plastifier, release agent, monomer, crosslinking chemical, adjuvant or these any combination.Several embodiments are provided especially, and wherein film is made up of the nano impression resist, and described nano impression resist comprises the polymer composition of about 20wt%-100wt%, the release agent of the plastifier of about at most 80wt% and about at most 30wt%.
In another embodiment of the present invention, polymer composition comprises that the about 50wt% of about 1wt%-is derived from the unit of oligomer, and the about 10wt% of about 0.01wt%-is derived from the unit of crosslinking chemical and the unit that the about 90wt% of about 50wt%-is derived from monomer.Typically, these polymer compositions can be out of shape and typically be higher than under about 10 ℃ temperature under less than 100 ℃ temperature and are out of shape.Therefore, in some embodiments, suitable thermoplastic compounds can provide glass transition temperature to be lower than about 10 ℃ nano impression resist.In these embodiments, polymer composition typically comprises at least a photo curable polymer composition, thermoplastic polymer composition, at least a in the thermoset polymer compositions or these any combination.
In another embodiment of the present invention, a kind of nano impression resist is provided, described nano impression resist comprise can be under less than 200 ℃ temperature polymer composition by die deformation, described mould can form size with at least one direction multiple structure less than 200nm, in case remove described mould, described polymer composition can keep described multiple structure.In this embodiment, provide the nano impression resist by any polymer composition provided herein.
Embodiment
Embodiment 1-8 discloses and can be used for various composition of the present invention.Can prepare composition according to method well known in the art.
Embodiment 1
Form polymer composition by following component.
Component wt％
Poly-(butyl methacrylate) 20％-99.9％
Dioctyl phthalate 0-79.9％
GP-277 0.1-30％
Embodiment 2
Form polymer composition by following component.
Component wt％
Poly-(methyl cetyl siloxane) 50％-100％
Dibenzoic acid Macrogol 200 ester 0-50％
Embodiment 3
Form polymer composition by following component.
Component wt％
Polystyrene 20％-99.9％
Diisodecyl adipate (DIDA) 0-79.9％
GP-187 0.01-30％
Embodiment 4
Form polymer composition by following component.
Component wt％
Poly-(methacrylic acid octadecane ester) 90％-99％
Triphenyl phosphate 0-10％
FS-62 0-1％
Embodiment 5
Form polymer composition by following component.
Component wt％
Poly-(vinyl chloride-altogether-vinyl acetate) 20％-100％
Diisooctyl phthalate 0-80％
GP-187 0-30％
Embodiment 6
Form polymer composition by following component.
Component wt％
Polyvinyl acetate 20％-100％
Diisooctyl phthalate 0-80％
The polymkeric substance that contains siloxane 0-30％
Embodiment 7
Form polymer composition by following component.
Component wt％
Divinylbenzene (DVB) 28％
Polyvinyl acetate (PVAc) 68％
GP-187 2％
AIBN 2％
Embodiment 8
Form polymer composition by following component.
Component wt％
The acrylic acid polysiloxane 73％
TMPTA 11％
Lauryl methacrylate 12％
Iragcure?184 4％
Although described in detail the present invention with reference to certain preferred embodiments and work-around solution, other work-around solution and embodiment are possible.Therefore, the scope of claims does not should be limited in the explanation of specially disclosed herein work-around solution and embodiment.

Claims (29)

1. one kind forms method of patterning in being carried on suprabasil film, and described method comprises:
Obtain a kind of mould of material, described mould is harder with respect to film,
Described film comprise can be under less than 200 ℃ temperature polymer composition by described die deformation;
The depression that this mould has first and second protruding features that separate each other and forms thus, wherein first and second protruding features have the shape that forms mould pattern with depression and at least one mould pattern lateral dimension less than 200nm are provided;
Under molding pressure, impel mould to form film;
Thickness below the protruding feature of mould descends, thereby forms mould pattern in film;
From this film, remove mould; With
From film, remove the zone that reduces thickness, thereby expose the part substrate surface of below, thin zone, so that the expose portion of substrate surface copy mold pattern and have at least one lateral dimension basically less than 200nm.
2. the process of claim 1 wherein that polymer composition comprises homopolymer, multipolymer, atactic polymers, block polymer, graft polymer, telechelic polymer, star polymer, dendrimer or these any combination.
3. the process of claim 1 wherein that this polymer composition comprises: poly-(methyl methacrylate), poly-(bisphenol-a carbonate), poly-(methyl cetyl siloxane), poly-(methyl acrylate), poly-(n-butyl acrylate), poly-(methacrylic acid octadecane ester), poly-(isobutyl methacrylate), poly-(butyl methacrylate), poly-(vinyl acetate), poly-(stearic acid vinyl ester), poly-(oxirane), polycaprolactone, (α-Jia Jibenyixi) falls, poly-(stearic acid vinyl ester)/poly-(methyl methacrylate), poly-(methyl cetyl siloxane)/poly-(methyl methacrylate), poly-(methacrylic acid octadecane ester)/poly-(methyl methacrylate), poly-(butyl methacrylate-altogether-isobutyl methacrylate), poly-(butyl methacrylate-altogether-methyl methacrylate), poly-(dimethyl siloxane-altogether-α-Jia Jibenyixi), poly-(ethylene-co-vinyl acetate)-grafting-(t-maleic anhydride), poly-(vinyl chloride-altogether-vinyl acetate), poly-(vinyl chloride-altogether-IVE), poly-(chlorotrifluoroethylene-be total to-vinylidene) or these any combination.
4. the process of claim 1 wherein that this polymer composition comprises oligomer, described oligomer comprises epoxy resin, acrylic acid (methacrylic acid) oligomer, reactive polysiloxane oligomers or these any combination.
5. the process of claim 1 wherein that this polymer composition further comprises monomer, described monomer comprises methacrylic acid C 8-C 20Alkane ester, (methyl) acrylic acid alkyl fluoride ester monomer or these any combination.
6. the process of claim 1 wherein that this polymer composition further comprises crosslinking chemical, described crosslinking chemical comprises DVB, TMPTA or these any combination.
7. the size of at least one direction of formation is less than the method for the multiple structure of 200nm, this method comprises the steps: to use die marks nano impression resist, described nano impression resist have can be under less than 200 ℃ temperature polymer composition by described die deformation, in case remove described mould, described polymer composition can keep described multiple structure.
8. the method for claim 7, wherein said polymer composition can be out of shape under less than 100 ℃ temperature.
9. the method for claim 7, wherein said polymer composition comprises photo curable polymer composition, thermoplastic polymer composition, heat-setting polymer composition, or these any combination.
10. the method for claim 9, wherein said photo curable polymer composition can solidify in less than about 2 seconds.
11. the method for claim 9, the viscosity of wherein said photo curable polymer composition under 25 ℃ is greater than about 2 pools.
12. the method for claim 11, the range of viscosities of wherein said photo curable polymer composition are about 10 pools-Yue 30 pools.
13. the method for claim 9, wherein said photo curable polymer composition comprises oligomer, and described oligomer comprises silicon atom.
14. the method for claim 9, wherein said photo curable polymer composition can be crosslinked in less than about 2 seconds.
15. the method for claim 9, wherein said photo curable polymer composition comprises the monomer of maximum about 90wt%.
16. the method for claim 7, wherein said nano impression resist further comprise plastifier, release agent, monomer, crosslinking chemical, adjuvant or these any combination.
17. the method for claim 7, wherein said nano impression resist comprises the described polymer composition of about 20wt%-100wt%, the release agent of the plastifier of about at most 80wt% and about at most 30wt%.
18. the method for claim 7, wherein said nano impression resist comprises:
A) oligomer of the about 50wt% of about 1wt%-;
B) crosslinking chemical of the about 10wt% of about 0.01wt%-;
C) monomer of the about 90wt% of about 50wt%-; With
D) light trigger of the about 2wt% of about 0.01wt%-.
19. the method for claim 7 wherein forms the structure that is lower than 50 nanometers.
20. the method for claim 7 is wherein in case when removing described mould, described polymeric material is in it more than glass transition temperature.
21. a film, it comprises:
A) nano impression resist, described nano impression resist comprise can be under less than 200 ℃ temperature polymer composition by die deformation, described mould can form the multiple structure of the size of at least one direction less than 200nm, in case remove described mould, described polymer composition can keep described multiple structure.
22. the film of claim 21, wherein said nano impression resist further comprise plastifier, release agent, monomer, crosslinking chemical, adjuvant or these any combination.
23. the film of claim 21, wherein said nano impression resist comprises the described polymer composition of about 20wt%-100wt%, the release agent of the plastifier of about at most 80wt% and about at most 30wt%.
24. the film of claim 21, wherein said polymer composition comprises:
A) the about 50wt% of about 1wt%-is derived from the unit of oligomer;
B) the about 10wt% of about 0.01wt%-is derived from the unit of crosslinking chemical; With
C) the about 90wt% of about 50wt%-is derived from the unit of monomer.
25. the film of claim 21, wherein said polymer composition can be out of shape under less than about 100 ℃ temperature.
26. the film of claim 25, wherein said polymer composition can be out of shape being higher than under about 10 ℃ temperature.
27. the film of claim 21, wherein said polymer composition comprises photo curable polymer composition, thermoplastic polymer composition, heat-setting polymer composition, or these any combination.
28. having, the film of claim 21, wherein said nano impression resist be lower than about 10 ℃ glass transition temperature.
29. nano impression resist, it comprise can be under less than 200 ℃ temperature polymer composition by die deformation, described mould can form the multiple structure of the size of at least one direction less than 200nm, in case remove described mould, described polymer composition can keep described multiple structure.
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