CN1720571A - 磁盘装置及其制造方法 - Google Patents
磁盘装置及其制造方法 Download PDFInfo
- Publication number
- CN1720571A CN1720571A CN200380105032.8A CN200380105032A CN1720571A CN 1720571 A CN1720571 A CN 1720571A CN 200380105032 A CN200380105032 A CN 200380105032A CN 1720571 A CN1720571 A CN 1720571A
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- layer
- antiferromagnetism
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- film
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Links
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- 239000007789 gas Substances 0.000 claims description 6
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- NMFHJNAPXOMSRX-PUPDPRJKSA-N [(1r)-3-(3,4-dimethoxyphenyl)-1-[3-(2-morpholin-4-ylethoxy)phenyl]propyl] (2s)-1-[(2s)-2-(3,4,5-trimethoxyphenyl)butanoyl]piperidine-2-carboxylate Chemical compound C([C@@H](OC(=O)[C@@H]1CCCCN1C(=O)[C@@H](CC)C=1C=C(OC)C(OC)=C(OC)C=1)C=1C=C(OCCN2CCOCC2)C=CC=1)CC1=CC=C(OC)C(OC)=C1 NMFHJNAPXOMSRX-PUPDPRJKSA-N 0.000 description 4
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- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/012—Recording on, or reproducing or erasing from, magnetic disks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/303—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3263—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
表面处理时间(秒) | 无退火处理MR(%) | 有退火处理MR(%) |
0 | 9.4 | 14.09 |
60 | 13.54 | 17.47 |
80 | 13.96 | 17.05 |
150 | 14.94 | 17.65 |
300 | 14.43 | 18.13 |
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002354064 | 2002-12-05 | ||
JP354064/2002 | 2002-12-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1720571A true CN1720571A (zh) | 2006-01-11 |
CN100412950C CN100412950C (zh) | 2008-08-20 |
Family
ID=32463324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003801050328A Expired - Fee Related CN100412950C (zh) | 2002-12-05 | 2003-11-28 | 磁盘装置 |
Country Status (4)
Country | Link |
---|---|
US (4) | US7312958B2 (zh) |
JP (1) | JPWO2004051629A1 (zh) |
CN (1) | CN100412950C (zh) |
WO (1) | WO2004051629A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100412950C (zh) * | 2002-12-05 | 2008-08-20 | 松下电器产业株式会社 | 磁盘装置 |
US7495871B1 (en) * | 2005-07-26 | 2009-02-24 | Storage Technology Corporation | Top formed grating stabilizer |
US7978439B2 (en) * | 2007-06-19 | 2011-07-12 | Headway Technologies, Inc. | TMR or CPP structure with improved exchange properties |
US7999336B2 (en) * | 2008-04-24 | 2011-08-16 | Seagate Technology Llc | ST-RAM magnetic element configurations to reduce switching current |
US9190081B2 (en) | 2014-02-28 | 2015-11-17 | HGST Netherlands B.V. | AF-coupled dual side shield reader with AF-coupled USL |
EP3123537A4 (en) * | 2014-03-25 | 2018-02-14 | Intel Corporation | Magnetic domain wall logic devices and interconnect |
US9099120B1 (en) | 2014-04-09 | 2015-08-04 | HGST Netherlands, B.V. | Interlayer coupling field control in tunneling magnetoresistive read heads |
US9196272B1 (en) | 2014-10-27 | 2015-11-24 | Seagate Technology Llc | Sensor structure having increased thermal stability |
Family Cites Families (44)
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US5206590A (en) | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
JPH0595208A (ja) | 1991-03-06 | 1993-04-16 | Minnesota Mining & Mfg Co <3M> | フイルムキヤリア |
US5422571A (en) | 1993-02-08 | 1995-06-06 | International Business Machines Corporation | Magnetoresistive spin valve sensor having a nonmagnetic back layer |
JP3306996B2 (ja) | 1993-06-02 | 2002-07-24 | セイコーエプソン株式会社 | フレキシブル基板の製造方法 |
JPH10183347A (ja) * | 1996-12-25 | 1998-07-14 | Ulvac Japan Ltd | 磁気抵抗ヘッド用成膜装置 |
JPH10188234A (ja) * | 1996-12-25 | 1998-07-21 | Ulvac Japan Ltd | 磁気抵抗ヘッド素子の製造方法 |
US6482329B1 (en) * | 1997-03-28 | 2002-11-19 | Migaku Takahashi | Method for manufacturing magnetoresistance element |
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US6063244A (en) * | 1998-05-21 | 2000-05-16 | International Business Machines Corporation | Dual chamber ion beam sputter deposition system |
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JP2000268330A (ja) | 1999-03-15 | 2000-09-29 | Victor Co Of Japan Ltd | 磁気抵抗効果型薄膜磁気ヘッドの製造方法 |
US6331773B1 (en) * | 1999-04-16 | 2001-12-18 | Storage Technology Corporation | Pinned synthetic anti-ferromagnet with oxidation protection layer |
US6428657B1 (en) * | 1999-08-04 | 2002-08-06 | International Business Machines Corporation | Magnetic read head sensor with a reactively sputtered pinning layer structure |
WO2001024170A1 (fr) * | 1999-09-29 | 2001-04-05 | Fujitsu Limited | Tete a effet de resistance magnetique et dispositif de reproduction d'informations |
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JP2002076474A (ja) * | 2000-06-05 | 2002-03-15 | Read Rite Corp | 自由層と境界を接する超薄酸化物を有する鏡面巨大磁気抵抗ヘッド |
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JP2002026055A (ja) | 2000-07-12 | 2002-01-25 | Seiko Epson Corp | 半導体装置及びその製造方法 |
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-
2003
- 2003-11-28 CN CNB2003801050328A patent/CN100412950C/zh not_active Expired - Fee Related
- 2003-11-28 JP JP2004556866A patent/JPWO2004051629A1/ja active Pending
- 2003-11-28 US US10/535,994 patent/US7312958B2/en not_active Expired - Fee Related
- 2003-11-28 WO PCT/JP2003/015300 patent/WO2004051629A1/ja active Application Filing
-
2007
- 2007-10-30 US US11/928,342 patent/US7542247B2/en not_active Expired - Fee Related
- 2007-10-30 US US11/928,473 patent/US7463458B2/en not_active Expired - Fee Related
-
2008
- 2008-10-27 US US12/289,380 patent/US7733613B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7312958B2 (en) | 2007-12-25 |
WO2004051629A1 (ja) | 2004-06-17 |
US20060072250A1 (en) | 2006-04-06 |
US7542247B2 (en) | 2009-06-02 |
CN100412950C (zh) | 2008-08-20 |
US20090104345A1 (en) | 2009-04-23 |
US20080068763A1 (en) | 2008-03-20 |
JPWO2004051629A1 (ja) | 2006-04-06 |
US7463458B2 (en) | 2008-12-09 |
US20080055785A1 (en) | 2008-03-06 |
US7733613B2 (en) | 2010-06-08 |
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