CN100412950C - 磁盘装置 - Google Patents
磁盘装置 Download PDFInfo
- Publication number
- CN100412950C CN100412950C CNB2003801050328A CN200380105032A CN100412950C CN 100412950 C CN100412950 C CN 100412950C CN B2003801050328 A CNB2003801050328 A CN B2003801050328A CN 200380105032 A CN200380105032 A CN 200380105032A CN 100412950 C CN100412950 C CN 100412950C
- Authority
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- China
- Prior art keywords
- layer
- antiferromagnetism
- rotary valve
- film
- responding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title abstract description 41
- 238000004519 manufacturing process Methods 0.000 title abstract description 14
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 61
- 229910000765 intermetallic Inorganic materials 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 230000005303 antiferromagnetism Effects 0.000 claims description 111
- 230000000694 effects Effects 0.000 claims description 41
- 229910045601 alloy Inorganic materials 0.000 claims description 23
- 239000000956 alloy Substances 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 10
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- 238000003475 lamination Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000006701 autoxidation reaction Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 230000005290 antiferromagnetic effect Effects 0.000 abstract 4
- 239000010410 layer Substances 0.000 description 297
- 239000010408 film Substances 0.000 description 122
- 239000000758 substrate Substances 0.000 description 44
- 238000005755 formation reaction Methods 0.000 description 17
- 229910003321 CoFe Inorganic materials 0.000 description 13
- 230000008878 coupling Effects 0.000 description 13
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- 238000005859 coupling reaction Methods 0.000 description 13
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- 230000005415 magnetization Effects 0.000 description 7
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- 230000009977 dual effect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000000992 sputter etching Methods 0.000 description 5
- NMFHJNAPXOMSRX-PUPDPRJKSA-N [(1r)-3-(3,4-dimethoxyphenyl)-1-[3-(2-morpholin-4-ylethoxy)phenyl]propyl] (2s)-1-[(2s)-2-(3,4,5-trimethoxyphenyl)butanoyl]piperidine-2-carboxylate Chemical compound C([C@@H](OC(=O)[C@@H]1CCCCN1C(=O)[C@@H](CC)C=1C=C(OC)C(OC)=C(OC)C=1)C=1C=C(OCCN2CCOCC2)C=CC=1)CC1=CC=C(OC)C(OC)=C1 NMFHJNAPXOMSRX-PUPDPRJKSA-N 0.000 description 4
- 239000000696 magnetic material Substances 0.000 description 4
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- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- QTCANKDTWWSCMR-UHFFFAOYSA-N costic aldehyde Natural products C1CCC(=C)C2CC(C(=C)C=O)CCC21C QTCANKDTWWSCMR-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- ISTFUJWTQAMRGA-UHFFFAOYSA-N iso-beta-costal Natural products C1C(C(=C)C=O)CCC2(C)CCCC(C)=C21 ISTFUJWTQAMRGA-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/012—Recording on, or reproducing or erasing from, magnetic disks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/303—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3263—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
表面处理时间(秒) | 无退火处理MR(%) | 有退火处理MR(%) |
0 | 9.4 | 14.09 |
60 | 13.54 | 17.47 |
80 | 13.96 | 17.05 |
150 | 14.94 | 17.65 |
300 | 14.43 | 18.13 |
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP354064/2002 | 2002-12-05 | ||
JP2002354064 | 2002-12-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1720571A CN1720571A (zh) | 2006-01-11 |
CN100412950C true CN100412950C (zh) | 2008-08-20 |
Family
ID=32463324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003801050328A Expired - Fee Related CN100412950C (zh) | 2002-12-05 | 2003-11-28 | 磁盘装置 |
Country Status (4)
Country | Link |
---|---|
US (4) | US7312958B2 (zh) |
JP (1) | JPWO2004051629A1 (zh) |
CN (1) | CN100412950C (zh) |
WO (1) | WO2004051629A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004051629A1 (ja) * | 2002-12-05 | 2004-06-17 | Matsushita Electric Industrial Co., Ltd. | 磁気ディスク装置及びその製造方法 |
US7495871B1 (en) * | 2005-07-26 | 2009-02-24 | Storage Technology Corporation | Top formed grating stabilizer |
US7978439B2 (en) * | 2007-06-19 | 2011-07-12 | Headway Technologies, Inc. | TMR or CPP structure with improved exchange properties |
US7999336B2 (en) * | 2008-04-24 | 2011-08-16 | Seagate Technology Llc | ST-RAM magnetic element configurations to reduce switching current |
US9190081B2 (en) | 2014-02-28 | 2015-11-17 | HGST Netherlands B.V. | AF-coupled dual side shield reader with AF-coupled USL |
EP3123537A4 (en) * | 2014-03-25 | 2018-02-14 | Intel Corporation | Magnetic domain wall logic devices and interconnect |
US9099120B1 (en) | 2014-04-09 | 2015-08-04 | HGST Netherlands, B.V. | Interlayer coupling field control in tunneling magnetoresistive read heads |
US9196272B1 (en) | 2014-10-27 | 2015-11-24 | Seagate Technology Llc | Sensor structure having increased thermal stability |
Citations (2)
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US6277505B1 (en) * | 1999-01-21 | 2001-08-21 | Read-Rite Corporation | Read sensor with improved thermal stability and manufacturing method therefor |
JP2002076474A (ja) * | 2000-06-05 | 2002-03-15 | Read Rite Corp | 自由層と境界を接する超薄酸化物を有する鏡面巨大磁気抵抗ヘッド |
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JPH10188234A (ja) * | 1996-12-25 | 1998-07-21 | Ulvac Japan Ltd | 磁気抵抗ヘッド素子の製造方法 |
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JP3234814B2 (ja) | 1998-06-30 | 2001-12-04 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気ヘッドアセンブリ及び磁気記録装置 |
JP2000268330A (ja) | 1999-03-15 | 2000-09-29 | Victor Co Of Japan Ltd | 磁気抵抗効果型薄膜磁気ヘッドの製造方法 |
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JP2002026055A (ja) | 2000-07-12 | 2002-01-25 | Seiko Epson Corp | 半導体装置及びその製造方法 |
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-
2003
- 2003-11-28 WO PCT/JP2003/015300 patent/WO2004051629A1/ja active Application Filing
- 2003-11-28 US US10/535,994 patent/US7312958B2/en not_active Expired - Fee Related
- 2003-11-28 JP JP2004556866A patent/JPWO2004051629A1/ja active Pending
- 2003-11-28 CN CNB2003801050328A patent/CN100412950C/zh not_active Expired - Fee Related
-
2007
- 2007-10-30 US US11/928,342 patent/US7542247B2/en not_active Expired - Fee Related
- 2007-10-30 US US11/928,473 patent/US7463458B2/en not_active Expired - Fee Related
-
2008
- 2008-10-27 US US12/289,380 patent/US7733613B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6277505B1 (en) * | 1999-01-21 | 2001-08-21 | Read-Rite Corporation | Read sensor with improved thermal stability and manufacturing method therefor |
JP2002076474A (ja) * | 2000-06-05 | 2002-03-15 | Read Rite Corp | 自由層と境界を接する超薄酸化物を有する鏡面巨大磁気抵抗ヘッド |
Also Published As
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US20080068763A1 (en) | 2008-03-20 |
US7733613B2 (en) | 2010-06-08 |
JPWO2004051629A1 (ja) | 2006-04-06 |
US7463458B2 (en) | 2008-12-09 |
US20060072250A1 (en) | 2006-04-06 |
CN1720571A (zh) | 2006-01-11 |
US20080055785A1 (en) | 2008-03-06 |
US7312958B2 (en) | 2007-12-25 |
US7542247B2 (en) | 2009-06-02 |
US20090104345A1 (en) | 2009-04-23 |
WO2004051629A1 (ja) | 2004-06-17 |
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